Title: Spectroscopic investigations of lattice dynamics in multidomain ferroelectrics Author: Elizabeth Vakkechalil John Department: Department of Condensed Matter Physics Institution: Department of Dielectrics, Institute of Physics, AVČR, Na Slovance 2, Praha 8, 182 21, Czech Republic. Supervisor: Ing. Jiří Hlinka, PhD., Department of Dielectrics, Institute of Physics, AVČR., Na Slovance 2, Praha 8, 182 21, Czech Republic. Consultants: RNDr. Stanislav Kamba CSc., Ing. Ivan Gregora CSc. Fyzikální ústav AVČR, Na Slovance 2, Praha 8, 182 21, Czech Republic. Abstract: Lead based ferroelectric perovskites exhibit attractive physical and structural properties. Ferroelectric domains are known to have a very essential impact on dielectric and piezoelectric properties of ferroelectrics. Tailoring of domain structures allows to change the macroscopic symmetry of the material and to purposely modify its average tensor properties. Ferroelastic domains play also a key role in physics of epitaxial ferroelectric films. Here we studied signature of domain structure in PbTiO3 thin film grown by metalorganic chemical vapor deposition technique on different substrates, namely LaAlO3, MgO, NdGaO3, SrTiO3 (100), SrTiO3 (110), SrTiO3 (111) doped with 0.5% Nb and LSAT. Certain aspects of domain structure can be...

The ferroelectricity in fluorite structure based hafnium oxide (HfO2) material expanded the horizon for realizing nonvolatile ferroelectric memory concepts. Due to the excellent HfO2 ferroelectric film properties, CMOS compatibility, and scalability; the material is foreseen as a replacement of the lead based ferroelectric materials with a big game changing potential for the emerging ferroelectric memories. In this thesis, the development of novel memory concepts based on the ferroelectric or antiferroelectric HfO2 material is reported. The ferroelectric field effect transistor (FeFET) memory concept offers a low power, high-speed, nonvolatile, and one cell memory solution ideal for embedded memory realization. As an emerging concept based on a novel ferroelectric material, the FeFET is challenged with key performance aspects intrinsic to the underlying physics of the device. A central part of this thesis is the development of FeFET through material and gate stack engineering, in turn leading to innovative novel device concepts. The conceptual innovation, process development, and electrical assessment are explored for an ferroelectric or antiferroelectric HfO2 based nonvolatile memories with focus on the underlying device physics. The impact of the ferroelectric material on the FeFET physics is explored via the screening of different HfO2 based ferroelectric materials, thicknesses, and the film doping concentration. The impact of material interfaces and substrate doping conditions are explored on the stack engineering level to achieve a low power and reliable FeFET. The material optimization leads to the concept of ferroelectric lamination, i.e. a dielectric interlayer between multi ferroelectric ones, to achieve a novel multilevel data storage in FeFET at reduced device variability. Toward a low power FeFET, the stack structure tuning and dual ferroelectric layer integration are explored through an MFM and MFIS integration in a single novel FeFET stack. The charge trapping effect during the FeFET switching captures the dynamics of the hysteresis polarization switching inside the stack with direct impact on the interfacial layer field. Even though manifesting as a clear drawback in FeFET operation, it can be utilized in Flash, leading to a novel hybrid low power and high-speed antiferroelectric based charge trap concept. Furthermore, the FeFET reliability is studied covering the role of operating temperature and the ferroelectric wakeup phenomenon observed in the FeFET. The temperature modulated operation, role of the high-temperature pyroelectric effect, and the temperature induced endurance and retention reliability are studied.:Table of Contents Abstract Table of Contents 1. Introduction 2. Fundamentals 2.1. Basics of Ferroelectricity 2.2. The FeFET Operation Principle and Gate Stack Theory 2.3. Structure and Outline of the PhD Thesis 3. The Emerging Memory Optimization Cycle: From Conceptual Design to Fabrication 3.1. The FeFET Conceptual Design and Layout Implementation 3.2. Gate First FeFET Fabrication: Material and Gate Stack Optimization 3.3. Novel Gate First based Memory Concepts: Device Integration and Stack Optimization 3.4. Device Characterization: Electrical Testing Schemes 4. The Emerging FeFET Memory: Material and Gate Stack Optimization 4.1. Material Aspect of FeFET Optimization: Role of the FE Material Properties 4.2. The Stack Aspect of FeFET Optimization: Role of the Interface Layer Properties 4.3. The Stack Aspect of FeFET Optimization: Role of the Substrate Implant Doping 4.4. Summary 5. A Novel Multilevel Cell FeFET Memory: Laminated HSO and HZO Ferroelectrics 5.1. The Laminate MFM and Stack Characteristics 5.2. The Laminate based FeFET Memory Switching 5.3. The Laminate FeFET Multilevel Coding Operation (1 bit, 2 bit, 3 bit/cell) 5.4. The Maximum Laminate FeFET MW Dependence on FE Stack Thickness 5.5. The Role of Wakeup and Charge Trapping 5.6. The Laminate MLC FeFET Area Dependence 5.7. The Laminate MLC Retention and Endurance 5.8. Impact of Pass Voltage Disturb on Laminate based NAND Array Operation 5.9. The Laminate FeFET based Synaptic Device 5.10. Summary 6. A Novel Ferroelectric MFMFIS FeFET: Toward Low Power and High-Speed NVM 6.1. The MFMFIS FeFET P-E and FET Characteristics 6.2. The MFMFIS based Memory Characteristics 6.3. The Impact of MFMFIS Stack Structure Tuning 6.4. The Maximum MFMFIS FeFET Memory Window 6.5. The Role of Device Scalability and Variability 6.6. The MFMFIS Area Tuning for Low Power Operation 6.7. The MFMFIS based FeFET Reliability 6.8. The Synaptic MFMFIS based FeFET 6.9. Summary 7. A Novel Hybrid Low Power and High-Speed Antiferroelectric Boosted Charge Trap Memory 7.1. The Hybrid Charge Trap Memory Switching Characteristics 7.2. The Role of Polarization Switching on Optimal Write Conditions 7.3. The Impact of FE/AFE Properties on the Charge Trap Maximum Memory Window 7.4. The Hybrid AFE Charge Trap Multi-level Coding and Array Operation 7.5. The Global Variability and Area Dependence of the Charge Trap Memory Window 7.6. The AFE Charge Trap Reliability 7.7. The Hybrid AFE Charge Trap based Synapse 7.8. Summary 8. The Emerging FeFET Reliability: Role of Operating Temperature and Wakeup Effect 8.1. The FeFET Temperature Reliability: A Temperature Modulated Operation 8.2. The FeFET Temperature Reliability: Role of the Pyroelectric Effect 8.3. The FeFET Temperature Reliability: Endurance and Retention 8.4. The Impact of Ferroelectric Wakeup on the FeFET Memory Reliability 8.5. Summary 9. Closure: What this Thesis has Solved? 9.1. How material selection/development influence the FeFET? 9.2. Why the FeFET Still Operates at High Write Conditions? 9.3. Why the FeFET Endurance is still a Challenge? 9.4. Can the FeFET become Multi-bit Storage Memory? 9.5. How the Scalability Determine FeFET Chances? 10. Summary 11. Bibliography List of symbols and abbreviations List of Publications Acknowledgment Erklärung

Refractive index measurements of the Strontium-Barium-Niobate (SBN) crystals show that none of the known second-harmonic-generation scheme (SHG) can be hold responsible for the SHG in SBN. Based on observations of the SHG experiments carried out with several compositions of the crystals in different setup-geometries a new model of second harmonic generaion was developed. The new SHG model, domain-induced second-harmonic generation (DISHG), which considers that the needle-like domain structure of this material plays an active role in the quasi phase matching of the produced second harmonic light has been experimentally proved using two different experiments. The new SHG process in the SBN crystals is a potential light source of cylindrically polarized light. The easy way of obtaining cylindrically polarized light with the SBN crystal broadens the potential applications for this material. The (DISHG) allows to investigate several properties of the ferroelectric domains. Using SHG measurements it was possible to analyze the development of the domain densities for domains of different sizes during the poling of the crystal. SHG measurements allow us to determine the minimum length of the ferroelectric domains. It was shown that this does not depend on the [Sr]/[Ba] ratio and domains are not getting longer after the sample was poled, except for the case of doped SBN. The ferroelectric-paraelectric phase transition has also been investigated. From the inflection point of the nonlinear susceptibility as function of the temperature the phase transition temperature was determined. The non fully-linear dependence of the phase transition temperature as function of the [Sr]/[Ba] ratio can be explained by a system of three different sublattices at the crystallographic positions of Strontium and Barium atoms.

Several SBN-x crystals of different composition have been investigated using the following methods: Optical absorption in the band gap spectral region, optical absorption of the OH-stretch-mode in the near infrared, Raman scattering, pyroelectric and dielectric measurements.The band edge position depends on the crystal composition in a non-linear manner, thus showing band bowing, typical for mixed systems. A new method has been developed to increase the hydrogen content in the bulk. This doping depends on the composition in an almost linear manner. The observed OH stretch mode spectra have been deconvoluted into three sub bands which can be attributed to different sites in the lattice. The composition dependent spectra have been modelled with a few parameters, using different line shapes and both linear and quadratic dependences of the band position.Raman spectra of several crystals of different composition were recorded for four different scattering configurations. Changes for wave numbers below 500 have been found, but could not attributed to particular modes. A prominent feature at about 600 wave numbers was not disturbed by other modes allowing a decomposition and an assigned of this mode to a certain vibration. It was found that the behaviour of this mode is governed by the [Sr]/[Ba] ratio in the pentagonal channel of SBN-x.The ferroelectric relaxor phase-transition of SBN-x has been studied with pyroelectric measurements. From the nonlinear susceptibility as a function of temperature the phase-transition temperature was deduced using the inflection point. The non fully-linear dependence of the phase-transition temperature as a function of the [Sr]/[Ba] ratio can be explained by a system of three different sublattices for the Strontium and Barium atoms.First results obtained with a setup for measuring the dielectric constant confirmed already reported data of other groups.

Les matériaux caloriques à l'état solide, qui subissent un changement de température adiabatique ou un changement d'entropie isothermal lorsque certains stimuli externes (champ électrique, champ magnétique, contrainte ou pression mécanique) est appliquée ou retirée, sont prometteurs pour la réfrigération à l'état solide, comme alternative aux dispositifs de refroidissement conventionnels inventé il y a cent ans qui utilisent des gaz dangereux. Compte tenu des améliorations des systèmes de réfrigération à compression de vapeur approchant très vite de leur limite d'efficacité théorique, en plus des préoccupations environnementales accrues, il y a eu récemment une recrudescence de la recherche mondiale pour de nouvelles solutions de réfrigération plus économiques et respectueuses de l'environnement. Les caloriques les plus importants sont les matériaux "ferroiquement" ordonnés (ferroélectriques, ferroélastiques et ferromagnétique / antiferromagnétique) qui présentent souvent des effets caloriques géants près de leurs transitions ferroïques. Dans cette thèse, nous présentons nos résultats théoriques et expérimentaux sur l'effet électrocalorique, élastocalorique, barocalorique et magnétocalorique dans différents matériaux ferroïques. Nos résultats montrent que tous ces effets caloriques peuvent donner des solutions de réfrigération prometteuses avec un faible impact environnemental. Nous abordons les ferroélectriques qui apparaissent comme matériaux idéaux permettant à la fois des réponses électrocaloriques, élastocaloriques et barocaloriques géantes près de la température ambiante. Pour la première fois, nous mettons en évidence un effet électrocalorique négatif dans des films minces antiferroélectriques et nous proposons un nouveau mécanisme pour comprendre la réponse calorique dans antiferroiques en général incluant antiferroélectrique et antiferromagentique. Par ailleurs, pour la première fois en utilisant une caméra infra-rouge, nous effectuons la mesure résolue spatialement sur l'effet électrocalorique dans des condensateurs multicouches, l'un des systèmes les plus étudiés considérés comme le prototype électrocalorique le plus prometteur. Nos résultats fournissent la première preuve expérimentale directe sur le flux de chaleur électrocalorique à la fois temporellement et spatialement dans un dispositif électrocalorique spécifique. En outre, pour la première fois, nous concevons un cycle de réfrigération multicalorique combinant effet électrocalorique avec des effets élastocaloriques / magnétocaloriques via des matériaux ferroélectriques. Nous avons réalisé ce cycle mutlicalorique pour résoudre un problème réel et de longue date, à savoir une grande hystérésis magnétique qui a empêché l'utilisation pourtant prometteuse de FeRh découvert il y a près de 26 ans en tant que matériau magnétocalorique. Nous espérons que cette thèse fournira non seulement des connaissances utiles pour comprendre fondamentalement l'effet calorique à l'état solide dans les matériaux ferroïques et ce qui est véritablement mesuré, mais pourra aussi servir de guide pratique pour exploiter et développer les ferrocalorics vers la conception de dispositifs appropriés. / Solid-state caloric materials, which undergo an adiabatic temperature change or isothermal entropy change when some external stimulus (electric field, magnetic field, stress and pressure) is applied or withdrawn, are promising for solid-state refrigeration, as an alternative to hazardous gases used in conventional cooling devices invented a hundred years ago. Given that the highly refined vapor-compression refrigeration systems asymptotically approach their theoretical efficiency limit in addition to the concern on environment, there has been a recent upsurge in worldwide search for new refrigeration solution which is economical and environmentally friendly. The most prominent calorics are ferroically ordered materials (ferroelectric, ferroelastic and ferromagnetic/antiferromagentic) that often exhibit giant caloric effects near their ferroic transitions. In this thesis, we present our theoretical and experimental results on electrocaloric effect, elastocaloric effect, barocaloric effect and magnetocaloric effect in different ferroic materials. Our findings show that all these caloric effects may appear promising with low environmental impact. We address ferroelectrics emerging as ideal materials which permit both giant elastocaloric, electrocaloric and barocaloric responses near room temperature. For the first time, we find a large negative electrocaloric effect in antiferroelectric thin films and we propose a new mechanism to understand the caloric response in antiferroics including antiferroelectric and antiferromagentic. In addition, for the first time using Infra-red camera we carry out spatially-resolved measurement on electrocaloric effect in multilayer capacitors, one of the most studied systems which are regarded as the most promising electrocaloric prototype. Our findings provide the first direct experimental evidence on the electrocaloric heat flux both temporally and spatially in a specific electrocaloric device. Moreover, for the first time, we design a multicaloric refrigeration cycle combining electrocaloric effect with elastocaloric/magentocaloric effects bridged by ferroelectric materials. We realized such mutlicaloric cycle to solve a real and longstanding problem, i.e., a large hysteresis that impeded reversibility in an otherwise promising magnetocaloric material FeRh discovered almost 26 years ago. We hope that this thesis will not only provide a useful background to fundamentally understand the solid-state caloric effect in ferroics and what we are really measuring, but also may act as a practical guide to exploit and develop ferrocalorics towards design of suitable devices.

To overcome the fundamental limit of the transistor subthreshold swing of 60 mV/dec at room temperature, the use of negative capacitance (NC) in ferroelectric materials was proposed [1]. Due to the recent discovery of ferroelectricity in CMOS compatible HfO₂ and ZrO₂ based thin films [2], [3], the promise of ultra-low power steep-slope devices seems within reach. However, concerns have been raised about switching-speed limitations and unavoidable hysteresis in NC devices [4], [5]. Nevertheless, it was shown that NC effects without hysteresis can be observed in fast pulsed voltage measurements on ferroelectric/dielectric capacitors [6], which was recently confirmed using ferroelectric Hf₀.₅ Zr₀.₅ O₂[7], [8]. While in these works only the integrated charge after each pulse was studied, here we investigate for the first time if the transient voltage and charge characteristics are also hysteresis-free.

We report on the retention properties of double-layer hafnium zirconium oxide (Hf₀.₅Zr₀.₅O₂; HZO) based ferroelectric tunnel junctions (FTJ). Utilizing HZO as the ferroelectric layer and aluminum oxide (Al₂ O₃) as the tunneling barrier a scalable FTJ memory operation with good endurance and an on/off ratio of about 10 was achieved. Due to inherent depolarization fields from the double layer structure, the device suffers from strong retention loss over time. An extrapolation to 10 years at room temperature shows vanishing differences between the on and off state currents. We propose a way to avert this retention loss by using a constant bias that can be built-in by a work function difference from the metal electrode. This leads to more stable on-current retention and only small off-current increase, giving rise to an improved retention behavior of the FTJ.

The aim of the work was a processing of ceramic material based on BST for ferroelectric application. Wet chemical techniques based on precipitations and sol-gel methods with ultrasound, hydrothermal or mechanochemical treatment supporting deaglomeration and reducing particle growth were used for BST ceramic powder synthesis. Suitable powders were selected by the evaluation of particle morphology, size and agglomeration, from these powders BST bulk ceramic with defined phase composition and morphology applicable for ferroelectric applications was prepared. It was found, that the most suitable method for preparation of phase pure and nanosized BST powder was sol-gel synthesis with solvothermal treatment (200 °C/48 h). Ceramic with relative density of 85 % TD and with the average grain size of about 1, 22 µm was prepared by pressing and sintering of the powder synthesized by the sol-gel method.

No description available.

Hafnium oxide is widely used for resistive switching devices, and recently it has been discovered that ferroelectricity can be established in (un-)doped hafnium oxide as well. Previous studies showed that both switching mechanisms are influenced by oxygen vacancies. For resistive switching, typically amorphous oxide layers with an asymmetric electrode configuration are used to create a gradient of oxygen vacancies. On the other hand, ferroelectric switching is performed by having symmetric electrodes and requires crystalline structures. The coexistence of both effects has recently been demonstrated. In this work, a detailed analysis of the reversible interplay of both switching mechanisms within a single capacitor cell is investigated. First, ferroelectric switching cycles were applied in order to drive the sample into the fatigued stage characterized by increased concentration of oxygen vacancies in the oxide layer. Afterwards, a forming step that is typical for the resistive switching devices was utilized to achieve a soft breakdown. In the next step, twofold alternation between the high and low resistance state is applied to demonstrate the resistive switching behavior of the device. Having the sample in the high resistance state with a ruptured filament, ferroelectric switching behavior is again shown within the same stack. Interestingly, the same endurance as before was observed without a hard breakdown of the device. Therefore, an effective sequence of ferroelectric—resistive—ferroelectric switching is realized. Additionally, the dependence of the forming, set, and reset voltage on the ferroelectric cycling stage (pristine, woken-up and fatigued) is analyzed giving insight into the physical device operation.