Hf₁₋ₓZrₓO₂ (x ∼ 0.5–0.7) has been the leading candidate of ferroelectric materials with a fluorite crystal structure showing highly promising compatibility with complementary metal oxide semiconductor devices. Despite the notable improvement in device performance and processing techniques, the origin of its ferroelectric crystalline phase (space group: Pca2₁) formation has not been clearly elucidated. Several recent experimental and theoretical studies evidently showed that the interface and grain boundary energies of the higher symmetry phases (orthorhombic and tetragonal) contribute to the stabilization of the metastable non-centrosymmetric orthorhombic phase or tetragonal phase. However, there was a clear quantitative discrepancy between the theoretical expectation and experiment results, suggesting that the thermodynamic model may not provide the full explanation. This work, therefore, focuses on the phase transition kinetics during the cooling step after the crystallization annealing. It was found that the large activation barrier for the transition from the tetragonal/orthorhombic to the monoclinic phase, which is the stable phase at room temperature, suppresses the phase transition, and thus, plays a critical role in the emergence of ferroelectricity.

Integration of high-K Metal-Insulator-Metal (MIM) capacitors in the Back-end-of-line (BEOL) is a topic of interest for the further development of the process at KTH Royal Institute of Technology. MIM-capacitors benefit from having constant capacitance values over a range of voltages and/or frequencies. One significant limitation in the development of better MIM-capacitors is the temperature consideration for BEOL processes. For the process at KTH Institute of Technology the temperature should not exceed 600 °C, as this would damage underlying devices. This work aims to fabricate aluminium oxide MIM-capacitors as a standard BEOL process performed at low temperature, which has been achieved via atomic layer deposition (ALD). The fabricated aluminium oxide MIM-capacitors had a good quality factor, series resistance and low dissipation. The capacitance for a 10 nm thick aluminium oxide insulator layer was 1 µF/cm2, which exceeds the set requirement. This work also aimed to make ferroelectric aluminium doped hafnium oxide MIM-capacitors using ALD. The doping ratio was varied in ALD as this had been found to affect formation of the ferroelectric crystal phase after a rapid thermal annealing step. Three wafers of 20 nm thick hafnium oxide and differing ratios were found to not be ferroelectric. The intermediate doping ratio was found to appear slightly anti-ferroelectric. A 10 nm thick doped hafnium oxide of intermediate doping was also fabricated and was found to be ferroelectric with a remnant polarisation of 1 µC/cm2. Though this polarisation is relatively small, it shows that top electrode induced strain due to lattice mismatch could be responsible for the ferroelectric properties of the capacitor. The quality of the hafnium based capacitors seemed worse in comparison to the aluminium oxide capacitors, which is suspected to be due to oxygen vacancies, resulting in a high loss tangent. While this first experiment showed promising results, the ferroelectric remnant polarisation should be increased by an order of magnitude and the electrical benchmark values should be improved before these hafnium oxide MIM-capacitors can be used in the BEOL process. / Integratie van high-K MIM-condensatoren in de Back-end-of-line (BEOL) is een onderwerp van belang voor de ontwikkeling van het proces bij de KTH. MIM-condensatoren profiteren van een constante capaciteitswaarde over een reeks spanningen en/of frequenties. Een belangrijke beperking bij de ontwikkeling van betere MIM-condensatoren is het temperatuur limiet voor BEOL-processen. Bij de KTH moet de temperatuur niet hoger zijn dan 600 °C, omdat dit de onderliggende apparaten zou beschadigen. Dit werk heeft tot doel aluminiumoxide MIM-condensatoren te fabriceren als een standaard BEOL-proces met lage temperatuur, en heeft dit inderdaad bereikt via atomaire laagafzetting (ALD). De gefabriceerde aluminiumoxide MIM-condensatoren hadden een goede kwaliteitsfactor, serieweerstand en lage dissipatie. De capaciteit voor een 10 nm dikke aluminiumoxide-isolatorlaag was 1µF/cm2, hoger dan de gestelde eisen. Dit werk was ook gericht op het maken van ferro-elektrische aluminium gedoteerde hafniumoxide MIM-condensatoren met behulp van ALD. De doteringsverhouding werd gevarieerd in ALD, aangezien bleek dat dit de vorming van de ferro-elektrische kristalfase faciliteerde na een snelle thermische gloeistap. Drie wafers van 20 nm dik hafniumoxide en verschillende verhoudingen bleken niet ferro-elektrisch te zijn. De tussenliggende doteringsverhouding bleek enigszins anti-ferro-elektrisch te zijn. Een 10 nm dik gedoteerd hafniumoxide met intermediaire dotering werd ook gefabriceerd en bleek ferro-elektrisch te zijn met een restpolarisatie van 1 µC/cm2. Hoewel deze polarisatie relatief klein is, toont het aan dat de door de topelektrode geïnduceerde spanning als gevolg van roostermismatch verantwoordelijk zou kunnen zijn voor de ferro-elektrische eigenschappen van de condensator. De kwaliteit van de op hafnium gebaseerde isolator leek slechter in vergelijking met die van aluminiumoxide, hetgeen kan worden toegeschreven aan gebrek van zuurstof in het rooster, wat in een groot verlies resulteert. De ferro-elektriciteit moet met een orde van grootte worden verhoogd en de elektrische benchmarks moeten ook verhoogd worden voordat deze hafniumoxide MIM-condensatoren kunnen worden gebruikt in het BEOLproces. Sleutelwoorden: atomaire laagafzetting (ALD), Ferro-elektrisch, Metaal-Isolator- Metaal (MIM) condensator, lage temperatuur, snelle thermische gloeiing.

Magnetoelectricity (ME) is a physical property that results from an exchange between polar (electric dipole) and spin (magnetic dipole) subsystem: i.e., a change in polarization (P) with application of magnetic field (H), or a change in magnetization (M) with applied electric field (E). Magnetoelectricity can be found both in single phase and composite materials. Compared with single phase multiferroic materials, composite multiferroics have higher ME effects. Through a strictive interaction between the piezoelectricity of the ferroelectric phase and the magnetostriction of the ferromagnetic phase, said multiferroic composites are capable of producing relatively large ME coefficients. This Dissertation focused on the deposition and characterization of two-phase composite magnetoelectric thin films. First, single phase ferroelectric thin films were studied to improve the multiferroic properties of the composite thin films. Then structural, ferroelectric, ferromagnetic, and magnetoelectric properties of composite thin films were researched. Finally, regular nano-array composite films were deposited and characterized. First, for single phase ferroelectric thin films, the phase stability was controlled by epitaxial engineering. Because ferroelectric properties are strongly related to their crystal structure, it is necessary to study the crystal structures in single phase ferroelectric thin films. Through constraint of the substrates, the phase stability of the ferroelectric thin films were able to be altered. Epitaxial thin-layers of Pb(Fe1/2Nb1/2)O3 (or PFN) grown on (001), (110), and (111) SrTiO3 substrates are tetragonal, orthorhombic, and rhombohedral respectively. The larger constraint stress induces higher piezoelectric constants in tetragonal PFN thin film. Epitaxial thin-layers of Pb(Zr0.52Ti0.48)O3 (or PZT) grown on (001), (110), and (111) SrTiO3 substrates are tetragonal, monoclinic C, and rhombohedral respectively. Enhanced ferroelectric properties were found in the low symmetry monoclinic phase. A triclinic phase in BFO was observed when it was deposited on tilted (001) STO substrates by selecting low symmetry (or interim) orientations of single crystal substrates. Then, in two phase composite magnetoelectric thin films, the morphology stability was controlled by epitaxial engineering. Because multiferroic properties are strongly related to the nano-structures of the composite thin films, it is necessary to research the nano-structures in composite thin films. Nano-belt structures were observed in both BaTiO3-CoFe2O4 and BiFeO3-CoFe2O4 systems: by changing the orientation of substrates or annealing condition, the nano-pillar structure could be changed into nano-belts structure. By doing so, the anisotropy of ferromagnetic properties changes accordingly. The multi-ferroic properties and magnetoelectric properties or (001), (110) and (111) self-assembled BiFeO3-CoFe2O4 nano-composite thin film were also measured. Finally, the regular CoFe2O4-BiFeO3 nano-array composite was deposited by pulsed laser deposition patterned using a focused ion beam. Top and cross-section views of the composite thin film showed an ordered CoFe2O4 nano-array embedded in a BiFeO3 matrix. Multiferroic and magnetoelectric properties were measured by piezoresponse force microscopy and magnetic force microscopy. Results show (i) switching of the magnetization in ferromagnetic CoFe2O4 and of the polarization in ferroelectric BiFeO3 phases under external magnetic and electric field respectively, and (ii) changes of the magnetization of CoFe2O4 by applying an electric field to the BiFeO3 phase. / Ph. D.

Recent analyses by polarization resolved second-harmonic (SH) microscopy have demonstrated that ferroelectric (FE) domain walls (DWs) can possess non-Ising wall characteristics and topological nature. These analyses rely on locally analyzing the properties, directionality, and magnitude of the second-order nonlinear tensor. However, when inspecting FE DWs with SH microscopy, a manifold of different effects may contribute to the observed signal difference between domains and DWs, i.e., far-field interference, Čerenkov-type phase-matching (CSHG), and changes in the aforementioned local nonlinear optical properties. They all might be present at the same time and, therefore, require careful interpretation and separation. In this work, we demonstrate how the particularly strong Čerenkov-type contrast can selectively be blocked using dark- and bright-field SH microscopy. Based on this approach, we show that other contrast mechanisms emerge that were previously overlayed by CSHG but can now be readily selected through the appropriate experimental geometry. Using the methods presented, we show that the strength of the CSHG contrast compared to the other mechanisms is approximately 22 times higher. This work lays the foundation for the in-depth analysis of FE DW topologies by SH microscopy.

Due to the voltage driven switching at low voltages combined with nonvolatility of the achieved polarization state, ferroelectric materials have a unique potential for low power nonvolatile electronic devices. The competitivity of such devices is hindered by compatibility issues of well-known ferroelectrics with established semiconductor technology. The discovery of ferroelectricity in hafnium oxide changed this situation. The natural application of nonvolatile devices is as a memory cell. Nonvolatile memory devices also built the basis for other applications like in-memory or neuromorphic computing. Three different basic ferroelectric devices can be constructed: ferroelectric capacitors, ferroelectric field effect transistors and ferroelectric tunneling junctions. In this article first the material science of the ferroelectricity in hafnium oxide will be summarized with a special focus on tailoring the switching characteristics towards different applications.The current status of nonvolatile ferroelectric memories then lays the ground for looking into applications like in-memory computing. Finally, a special focus will be given to showcase how the basic building blocks of spiking neural networks, the neuron and the synapse, can be realized and how they can be combined to realize neuromorphic computing systems. A summary, comparison with other technologies like resistive switching devices and an outlook completes the paper.

This dissertation focuses on projects where optical techniques were employed to characterize novel materials, developing concepts toward next generation of devices. The materials that I studied included InAsP, InMnSb and InMnAs, and BT-BCN. I have employed several advanced time resolved and magneto-optical techniques to explore unexplored properties of these structures. The first class of the materials were the ternary alloys InAsP. The electron g-factor of InAsP can be tuned, even allowing for g=0, making InAsP an ideal candidate for quantum communication devices. Furthermore, InAsP shows promises for opto-electronics and spintronics, where the development of devices requires extensive knowledge of carrier and spin dynamics. Thus, I have performed time and polarization resolved pump-probe spectroscopy on InAsP with various compositions. The carrier and spin relaxation time in these structures were observed and demonstrated tunability to the excitation wavelengths, composition and temperature. The sensitivity to these parameters provide several avenues to control carrier and spin dynamics in InAsP alloys. The second project focused on the ferromagnetic narrow gap semiconductors InMnAs and InMnSb. The incorporation of Mn can lead to ferromagnetic behavior of InMnAs and InMnSb, and enhance the g-factors, making them ideal candidates for spintronics devices. When grown using Molecular Beam Epitaxy (MBE), the Curie temperature (textit{$T_c$}) of these structures is textless 100 K, however structures grown using Metalorganic Vapor phase Epitaxy (MOVPE) have textit{$T_c$} textgreater 300 K. Magnetic circular dichroism was performed on MOVPE grown InMnAs and InMnSb. Comparison of the experimental results with the theoretical calculations provides a direct method to map the band structure, including the temperature dependence of the spin-orbit split-off band to conduction band transition and g-factors, as well as the estimated sp-d electron/hole coupling parameters. My final project was on the lead-free ferroelectric BT-BCN. Ferroelectric materials are being investigated for high speed, density, nonvolatile and energy efficient memory devices; however, commercial ferroelectric memories typically contain lead, and use a destructive reading method. Reflectometry measurements were used in order to determine the refractive index of BT-BCN with varying thicknesses, which can provide a means to nondestructively read ferroelectric memory through optical methods. / Ph. D. / This dissertation focuses on the characterization of materials that are important for the next generation computer architecture through optical techniques. These materials include the ternary alloy InAsP, the ferromagnetic semiconductors InMnAs and InMnSb, and the lead-free ferroelectric BT-BCN. InAsP is a ternary alloy composed of the technologically important InAs and InP, and by changing the alloy composition, the band gap and g-factor can be tuned. This allows for InAsP to have band gaps within the communication band, which is important for fiber optic communications as well as infrared photodetectors. As the functionality of these devices depends on the carrier dynamics, I have performed pump-probe spectroscopy in order to probe the carrier and spin relaxation times of this material system. These relaxation times were found to vary with excitation wavelengths, allowing flexibility in the application of this material system for devices. InAs and InSb are attractive materials for device applications because they offer large electron g-factor, small effective masses, and high mobilities. With the incorporation of Mn, these materials can become ferromagnetic, allowing for their use in ferromagnetic memories as well as other possible devices. The theory of ferromagnetism in semiconductors relies on the interaction between the itinerant holes and the Mn ions, however, in narrow gap semiconductors there is a large band mixing between the conduction and valence band states, and thus the interaction between the conduction band electrons and the Mn is important. In this study, my measurements revealed several interband transitions, which allowed for the calculation of the coupling constants between the electrons, holes and the Mn. My final study involved the lead-free ferroelectric BT-BCN. Ferroelectric materials are ideal for fast, low power and nonvolatile memories; however, typical implementation utilizes materials that contain lead, and a destructive reading mechanism, requiring a rewrite step. Optical, nondestructive reading methods are being explored based off of the rotation of the polarization of light as it passes through the sample. As this requires knowledge of the refractive index, I performed reflectometry measurements in order to determine the refractive indices of several BT-BCN films.

Une des méthodes utilisées pour étudier la ferroélectricité à l'échelle nanométrique dans les couches minces est la technique appelée « Piezoresponse Force Microscopy » (PFM). La PFM est un mode dérivé de l’AFM (Atomic Force Microscopy) en mode contact. Cette technique est basée sur l’effet piézoélectrique inverse : lorsqu’on applique un champ électrique sur un matériau piézoélectrique celui-ci se déforme. La pointe est posée sur la surface et mesure donc une déformation locale due à la tension appliquée. Les résultats obtenus par PFM sur des couches minces deviennent difficiles à interpréter dès lors que des charges d’origine non ferroélectriques (différentes de la charge de polarisation) entrent en jeu : charges électroniques piégées dans l’oxyde après l’injection de courant dues aux courants de fuite, charges déjà présentes dans la couche, les charges de surface, ainsi que les différents phénomènes électrochimiques due à la présence de la couche d’eau sous la pointe lors des mesures sous atmosphère ambiante. Le but de ce travail de thèse est de montrer que dans le cas de couches très minces les courants de fuite et les phénomènes électrochimiques peuvent conduire à l’interprétation de résultat PFM erroné. Des mesures PFM ont été réalisées sur des couches minces de PbZrTiO3, BaTiO3 et des nanostructures de BiFeO3 ferroélectriques. Les paramètres de mesure utilisés en PFM sont discutés avec une attention particulière sur la première résonance de contact qui permet d’amplifier le signal PFM. L’impact des phénomènes électrochimiques sur le contraste en PFM est discuté et mis en évidence d’un point de vue expérimentale. Des images PFM sur des couches minces non-ferroélectriques sont obtenues semblable à celle obtenues lors de l’utilisation d’une procédure standard sur des échantillons ferroélectriques. Ces images sont réalisées sur des couches minces d’aluminate de lanthane (LaAlO3), d'oxyde de Gadolinium (Gd2O3) et d’oxyde de Silicium (SiO2). Les motifs obtenus sur le LaAlO3 et le Gd2O3, similaires à des domaines de polarisation opposés, tiennent dans le temps sous atmosphère ambiante. Ces mesures sont comparées avec des résultats obtenus sur des couches minces de BaTiO3 préparées par MBE (Molecular Beam Epitaxy). Différentes méthodes de caractérisation électriques à l’échelle macroscopique sont présentées afin de confirmer la ferroélectricité des couches minces étudiées dans cette thèse. L'objectif est de disposer d'une procédure permettant d'affirmer qu'un échantillon dont on ne sait rien est ou n'est pas ferroélectrique. / Piezoresponse Force Microscopy (PFM) is a powerful tool for the characterization of ferroelectric materials thanks to its ability to map and control in a non destructive way domain structures in ferroelectric films. Most of the time, the ferroelectric behaviour of a film is tested by writing domains of opposite polarization with the Atomic Force Microscope (AFM) tip and/or by performing hysteresis loops with the AFM tip as a top electrode. A given sample is declared ferroelectric when domains of opposite direction have been detected; corresponding to zones of distinct contrast on the PFM image, or when an open hysteresis loop is obtained. More prudently in certain cases, the ferroelectricity is at last attested only when the contrast is stable within several hours. But as the thickness of the films studied by PFM decrease, data become difficult to interpret. In particular, charges trapped after current injection due to leakage currents and electrochemical phenomena due to the water layer under the tip may contribute in a non-negligible way to the final contrast of PFM images. In this thesis, some PFM measurements are performed on ferroelectric PbZrTiO3, BaTiO3 thin films and BiFeO3 nanostructures. Different parameters used in PFM measurements are discussed with special attention on the buckling first harmonic PFM measurements which allow the amplification of the PFM signal. The impact of electrochemical effects on the PFM contrast are discussed and are shown experimentally. Then, the standard procedure which is used in order to show the ferroelectricity of a film is applied to a non-ferroelectric sample with apparently the same results. To do so, we use a LaAlO3, Gd2O3 and SiO2 amorphous dielectric films and apply similar voltages as for artificially written ferroelectric domains. The resulting pattern is imaged by PFM and exhibit zones of distinct PFM contrasts, stable with time, similar to the one obtained with ferroelectric samples. These results are explained and is compared with results obtained on BaTiO3 thin films prepared by Molecular Beam Epitaxy which are supposed to be ferroelectric. In order to confirm the ferroelectricity of our thin films, several macroscopic electrical techniques are introduced. The aim of this study is to establish a reliable procedure which would remove any ambiguity in the characterization of the ferroelectric nature of such samples.

In this thesis, the results pertaining to various investigations carried out on Triglycine sulphate (TGS) single crystals, polyvinylidene fluoride (PVDF) films, lithium tantalate (LT)/PVDF nanocomposites and LT thin films are presented with emphasis on the characteristics that are crucial for their use in pyroelectric sensors. TGS single crystals (size 68 x 45 x 42 mm3), which have high pyroelectric coefficients, were grown by slow cooling method using newly designed platform technique based crystal growth work stations. The problem of slow growth rate along c-direction was overcome by placing (010) oriented seeds on the platform. The grown TGS crystals were used for the fabrication of the laser energy meter and temperature sensor. One drawback of TGS is its low Curie temperature (490C). As a consequence when the operating temperature approaches the Curie temperature, the crystals start depolarizing owing to the movement of domains. As a result the linearity of the devices gets affected and restricts the use of TGS. Therefore pyroelectric materials possessing higher Curie temperatures and larger pyroelectric coefficients than that of TGS are desirable. LT in single crystalline form having Curie temperature of ≈6000C has already been in use for pyroelectric device applications. However, growing stoichiometric LT single crystal is very difficult. On the other hand PVDF polymer films (Tc≈1800C) have low pyrolectric coefficients and difficult to pole electrically. Therefore efforts were made to prepare LT/PVDF nanocrystal composites to increase the pyroelectric coefficient of PVDF and to reduce the poling field. Nanoparticles of LT were prepared using sol-gel route. Spherical nanoparticles of size 20-40nm were prepared from sol by adding oleic acid to it. These nanoparticles were characterized using XRD, TEM, DSC and Raman spectroscopy. PVDF films with large percentage of β-phase (ferroelectric phase) were fabricated from solutions prepared using dimethylsulphoxide (DMSO) solvent. PVDF films (30µm thick), embedded with 20-40nm sized nanocrystallites of LT were fabricated to utilize them for pyroelectric sensor applications. The ferroelectric and pyrolectric properties of nano composite films were studied for sensor applications point of view. As a replacement for the single crystals of LT in pyroelectric sensors, investigations were carried out on oriented LT thin films. The studies on LT thin films yielded promising results which could be exploited for pyroelectric sensor applications.

Ferroelectric materials, especially the polycrystalline ceramics, are very promising material for a variety of applications such as high permittivity dielectrics, ferroelectric memories, piezoelectric sensors, piezoelectric/electrostrictive transducers, electrooptic devices and PTC thermistors. Among the ferroelectric based piezoelectric ceramics the lead–zirconate-titanate Pb(Zr1-xTix)O3 (PZT) have dominated transducer and actuator market due to its excellent piezoelectric and dielectric properties, high electromechanical coupling, large piezoelectric anisotropy, ease of processing and low cost. However, the toxicity of lead based compounds has raised serious environmental concerns and therefore has compelled the researchers to look for new lead free alternatives with good piezoelectric and ferroelectric properties. (Na0.5Bi0.5)TiO3 (NBT) and its solid solution is one of the leading lead free piezoceramic ceramics due to their interesting ferroelectric, piezoelectric, electromechanical and dielectric property. The parent compound NBT is a ferroelectric with a moderately high Curie temperature (~250 oC), large ferroelectric polarization (~40µC/cm2) polarization, promising piezoelectric properties with 0.08% strain and longitudinal piezoelectric coefficient (d33) ~ 80 pC/N. X-ray and neutron diffraction studies in the past have shown that NBT exhibits rhombohedral (R3c) at room temperature. Neutron diffraction studies have suggested that NBT undergo a gradual rhombohedral to tetragonal (P4bm) transformation in a temperature region 200-320 ºC. Though the structure and phase transition behavior of NBT has been extensively investigated for over six decades now, this subject has again become debatable in recent few years, with some group reporting formation of orthorhombic phase above room temperature and another group suggesting monoclinic distortion at room temperature using high resolution x-ray diffraction technique. Interestingly the intermediate orthorhombic instability, reported by electron diffraction studies, has never been captured by neutron diffraction method though neutron diffraction is an equally powerful tool for studying (oxygen) octahedral tilts in perovskites. Needless to mention, the understanding of the subtle structural distortions have great significance with regard to the determination of the structure-piezoelectric property correlations in NBT based piezoceramics. The present thesis deals with such subtle structural issues in great detail. The systems investigated in the thesis are Ca and Ba modified NBT. While the Ca modified system was chosen to understand the subtle orthorhombic instability that has been reported above room temperature (only) by detailed electron diffraction work, Ba-modified NBT is the most investigated among the NBT-derived piezoelectric material systems and this thesis attempts to address some of the very complex nature of the structure-piezoelectric property correlation of this system. The first chapter of the thesis provides a brief introduction to the field of ferroelectrics, perovskite structure and their phase transition. A brief exposure to the conventional lead based relaxor ferroelectric and piezoelectric material is provided. A detailed overview of the existing knowledge related to room temperature structure of NBT and its phase transition studies with temperature has been discussed in the later part of this chapter. The second chapter includes various the experimental techniques that have been employed to synthesis and characterize the specimens under investigation. The third chapter deals with the phase transition behaviour of Ca modified NBT as a function of composition and temperature in the dilute concentration region. This work was carried out with the view to obtain a better understanding and compliment the intrinsic high temperature orthorhombic instability in NBT reported by electron diffraction technique. Interestingly, inspite of the fact that neutron diffraction method is a very sensitive tool for investigating subtle change in the nature of octahedral tilt in oxide perovskites, the intermediate orthorhombic distortion proposed by the electron diffraction studies has so far never been captured in any of the neutron diffraction studies. In this work we have verified the genuineness of the intrinsic instability with regard to the non-polar orthorhombic structure using neutron powder diffraction by adopting a special strategy which helped in capturing the characteristic signatures (the superlattice reflections) of the orthorhombic phase in the neutron powder diffraction patterns. It was found that small fraction of Ca-substitution (8-10 mol %) was good enough to amplify the magnitude of the orthorhombic (Pbnm) distortion, without altering the sequence of the structural evolution with temperature of the parent compound (NBT) itself, and stabilizing it at the global length scale at lower temperatures than pure NBT. This chapter presents the innovative approach that was used to extract reliable information about the very complex phase transition behaviour, involving coexistence of the various similar looking but crystallographically different phases in different temperature regimes by Rietveld analysis of temperature dependent neutron powder diffraction pattern in conjunction with temperature dependent dielectric and ferroelectric characterization of the specimens. The detailed study revealed the following sequence of structural evolution with temperature: Cc+Pbnm →Pbnm + P4/mbm → P4/mbm →Pm3 m. The fourth chapter gives a detail account of the structure-property correlations and the phase transition behaviour of (1-x)(Na0.5Bi0.5)TiO3 – (x)BaTiO3 (0≤x≤0.10), the most important solid solution series with NBT as reported in the literature. The phase transformation behaviour of this system has been investigated as a function of composition (0<x≤0.10), temperature, electric field and mechanical-impact by Raman scattering, ferroelectric, piezoelectric measurements, x-ray and neutron powder diffraction methods. The structure of the morphotropic phase boundary (MPB) compositions of this system, which is interesting from the piezoelectric property point of view, has been under controversy for long. While some groups report the structure to be pseudocubic, other groups suggest it to be combination of rhombohedral and tetragonal. A perusal of the literature suggests that the reported nature and composition range of MPB is dependent on the method of synthesis and characterization technique used. In the present study, crystal structure of the NBT-BT solid solution has been investigated at the close interval near the MPB (0.05≤x≤0.10). Though x-ray diffraction study revealed three distinct composition ranges characterizing different structural features in the equilibrium state at room temperature: (i) monoclinic (Cc) + rhombohedral (R3c) for 0≤x≤0.05, (ii) “cubic-like” for 0.06≤x≤0.0675 and (iii) MPB like for 0.07≤x<0.10, Raman and neutron powder diffraction studies revealed identical symmetry for the cubic like and the MPB compositions. Both the cubic like compositions and the MPB compositions exhibit comparatively large d33. In the later part of this chapter this apparent contradiction is resolved by the fact that the cubic like structure transforms irreversibly to MPB after electric poling, a procedure which involves applying high dc electric field (well above the coercive field) to the pellet before carrying out the piezoelectric measurements. The effect of electrical field and mechanical impact has been studied for all the three different composition range, and it was found that electric field and mechanical impact both led to irreversible phase transformation in the same direction, though the transformation with mechanical impact remains incomplete in comparison to electric field. The most pronounced effect was observed for the cubic like compositions 0.06≤x≤0.0675 – they undergo phase separation to rhombohedral and tetragonal phases by electrical and mechanical perturbations. In the non-perturbed state the cubic-like critical compositions mimics features of relaxor ferroelectrics and extremely short coherence length (~ 40-50 Å) of the out-of-phase octahedral tilts. In the poled state this coherence length grows considerably and the system behaves like a normal ferroelectric. This confirmed a strong coupling between the lattice, octahedral tilts and polarization degrees of freedom. Neutron diffraction study of compositions exhibiting cubic-like and the MPB like revealed that the traditional P4bm tetragonal structure model fails to account for the intensity of the superlattice reflections. Thus the tetragonal structure stabilized above room temperature in pure NBT is different from the tetragonal phase observed at room temperature in the NBT-BT system. The results of the effect of mechanical impact and electric field has also been reported in this chapter for the critical composition exhibiting MPB (x=0.07). A detailed structural analysis of the precritical compositions, x≤0.05, revealed coexistence of ferroelectric phases (Cc+R3c) in equilibrium state (annealed specimens). This transforms to single phase (R3c) state after poling. Thus though the precritical (x≤0.05) and critical compositions (0.06≤x<0.10) of NBT-BT exhibits coexistence of ferroelectric phases in the equilibrium state, the fact that the electric poling makes the specimen single phase, R3c, after poling for the precritical compositions and retains the two phase nature of the critical compositions makes the critical compositions exhibit considerably higher piezoelectric response than the precritical compositions. Chapter five is dedicated to phase transition behaviour of the post critical compositions of (1-x)(Na0.5Bi0.5)TiO3–(x)BaTiO3 (0.16≤x≤1) using temperature dependent XRD, dielectric and ferroelectric studies. Though structurally the entire composition range is tetragonal, several notable features were revealed during detailed examination of the structural and dielectric behaviour. This study is also important from the view point that pure BT is a major component of multilayer ceramic capacitors and that an increase in the Curie point would be a welcome step for better temperature stability of the device. NBT does this. The transition temperature increases from 120 ºC for pure BT to 275 ºC for x=0.30 along with simultaneous increase in c/a ratio from 1.009 (pure BT) to 1.02 (x=0.30). Detailed analysis of temperature and frequency dependent dielectric data revealed deviation from Curie-Weiss and suggests a gradual transformation to relaxor-ferroelectric state as the NBT concentration increases in BT. The measure of frequency dispersion ‘γ’ parameter was determined from modified Curie-Weiss law for various compositions in the system. The ferroelectric and piezoelectric properties have also been investigated in detail for this composition range and an attempt has been made to correlate the composition variation of these properties with their structural parameters. This chapter shows a systematic correlation between all physical quantities such as Curie point, piezoelectric coefficient, polarization and tetragonality as a function of composition.

Les principaux objectifs de cette thèse de doctorat ont été de réaliser la synthèse et la caractérisation structurale et dieléctrique des échantillons céramiques ferroélectriques appartenants au système Pb1-xRxZr0,40Ti0,60O3 avec R = Ba et La et x entre 0,00 à 0,50. Ce système a été choisi car il est un matériel ferroélectrique qui a des propriétés physiques intéressantes, comme haute constante diélectrique et piézo-électrique, ce qui les rend candidats potentiels pour des applications telles que les condensateurs à haute densité d'énergie et les actionneurs. Afin d'évaluer le comportement relaxor, les études ont été effectuées avec la variation de la composition, du type de dopage (par des atomes de la même ou différente valence – La ou Ba) et de la taille des particules de céramique, dès l'échelle micrométrique à l'échelle nanométrique. Les échantillons céramiques micrométriques ont été préparées par la méthode de réaction de l'état solide et la frittage dans un four électrique conventionnel. Les données fournies par la technique de diffraction des rayons X de cettes échantillons ont montré une transition de une phase tétragonal pour une phase cubique avec l'augmentation de la concentration de cations substituants. Ces changements ont été attribués à une diminution de distorsion dans le maille cristallographique en raison de l'apparition de défauts causés par l'incorporation de dopage. Les mesures électriques ont été obtenues par spectroscopie d'impédance et ont montré un comportement électrique relaxor à partir de compositions avec plus de 12% at. La et de 30% at. Ba pour les systèmes PLZT et PBZT, respectivement. Les mesures électriques de l'échantillon avec 12%, 13% et 14% at. La et 30% at. Ba présentent un comportement qui, selon la littérature, est liée à une transition de phase spontanée d'un comportement relaxor et au comportement d'un matérial ferroélectrique normal. La technique de diffraction des rayons X a également été utilisé pour surveiller le processus de transition de phase en fonction de la température pour échantillons PLZT et PBZT. Il est possible de voir le changement de structure tétragonal de groupe d'espace P4mm en structure cubique de groupe d'espace Pm-3m. En ce qui concerne la structure locale, nous avons effectué des mesures expérimentales avec la technique de spectroscopie d'absorption des rayons X dans le spectre XANES aux seuils d'absorption de différents éléments pour les échantillons PLZT et PBZT. Dans les cas de seuil d'absorption K du titane, l'intégration de La et Ba atomes de la structure du PZT entraîne une diminution dans le désordre local dans le octaèdre TiO6, vérifié par la réduction du déplacement statique de atome Ti au centre de l'octaèdre TiO6. Cette évolution est plus faible pour les échantillons que montrent le comportement relaxor. Les spectres d'absorption EXAFS au seuil LIII du plomb et seuil K du zirconium ont été effectués aussi et ces mesures indiquent que la structure locale autour des atomes de plomb ou de zirconium est également affectée par l'introduction des atomes de La et Ba dans la structure. Le comportement relaxor a été aussi étudié en fonction de la taille de grain dans une échelle nanométrique. Ainsi les échantillons de compostions PZT, PLZT11 et PBZT10 ont eté préparés en utilisant la méthode de synthèse chimique de polymères précurseurs et le processus de frittage par spark plasma. La caractérisation de ces échantillons par diffraction de rayons X montrent que les paramétres de maille réduisent en comparison avec les échantillons de même composition et taille de grain micrométrique. Pour l'échantillon de composition PLZT11, il est possible de constater le comportement relaxor par les mesures de la constante dieléctrique en fonction de la température. Les changements quand la taille de grain est dans une échelle nanométrique sont attribués à la limitation des frontières de grains, qui provoquent un systéme de tension, responsable de la diminuition des paramétres de maille, et provoquent l'apparition de domaines ferroélectriques nanométriques / The main objectives of this doctoral thesis were the synthesis and structural characterization of Pb1-xRxZr0.40Ti0.60O3 ferroelectric ceramic samples, with R = Ba and La and x between 0.00 to 0.50. This system was chosen because its interesting physical properties such as high dielectric and piezoelectric constant. These characteristics make it potential candidate for applications such as capacitors in high energy density and actuators. To evaluate the relaxor behavior, the studies were carried out with the change in the composition, type of doping (by atoms of the same or different valence – La or Ba) and the particle size of ceramics, from the micrometer to nanometer scale. Micrometric ceramic samples are prepared by the method of reaction of solid state and sintering in a conventional furnace. The characterization with X-ray diffraction technique of these samples showed a transition from tetragonal phase to a cubic phase with increase of the dopping cation concentration. These changes have been attributed to the appearance of defects caused by the incorporation of La or Ba cations. Electrical measurements were obtained by impedance spectroscopy and showed a electric relaxor behavior from compositions with more than 12 at. % of La and the 30 at. % of Ba for PLZT and PBZT systems, respectively. These measurements for the samples with 12 at. %, 13 at. % and 14 at. % of La and 30 at. % of Ba exhibit a behavior that, according to the literature, is related to a spontaneous phase transition from a relaxor behavior to a normal ferroelectric behsvior. The technique of X-ray diffraction also been used to monitor the phse transition phase as a function of the temperature for PLZT and PBZT samples. It is possible to note the change in a tetragonal structure with P4mm space group to a cubic structure with Pm-3m space group. Concerning the local structure, XANES spectra in the absorption edge of various elements in PLZT and PBZT samples were performed. In the cases of Ti K-edge absorption, the dopping of La and Ba atoms in the PZT structure leads to a decrease of the local disorder in the TiO6 octahedron and it is verified the reduction of static displacement of Ti atom in the center of the TiO6 octahedron. This displacement is lower for samples that show relaxor behavior. The EXAFS measurements in Pb LIII-edge and Zr K-edge were performed and also indicate that local structure around lead or zirconium atoms is also affected by the introduction of La and Ba atoms in the PZT structure. The relaxor behavior was also studied depending on the size of particle size in a nanometer scale. Thus samples PZT, PLZT11 and PBZT10 compositions were prepared using the synthesis method of precursor polymers and the process of sintering by spark plasma. Characterization of these samples by X-ray diffraction shows that the lattice parameters are reduced in comparison with samples of the same composition and micrometer particle size. For PLZT11 composition, it is possible to observe a relaxor behavior by measurement of the dielectric permittivity as a function of the temperature. These changes when the grain size is in a nanoscale are attributed to the grain boundaries, that are responsible for the decrease in the lattice parameters and the appearance of ferroelectric nanodomains