In recent years, the use of first-principles based atomistic modeling technique has become extremely popular to gain better insights on the various locally modulated electronic properties of nano materials and structures. Atomistic modeling offers the benefit of predicting crystal structures, visualizing orbital distribution and electron density, as well as understanding material properties which are hard to access experimentally. The single layer MoS2 has emerged as a suitable choice for the next generation nano devices, owing to its distinctive electrical, optical and mechanical properties like, better electrostatics, increased photo luminescence, higher mechanical flexibility, etc. The realization of decananometer scale digital switches with the single layer MoS2 as the channel may provide many significant advantages such as, high On/Off current ratio, excellent electrostatic control of the gate, low leakage, etc. However, there are quite a few critical issues such as, forming low resistance source/drain contacts, achieving higher effective mobility, ensuring large scale controlled growth, etc. which need to be addressed for successful implementation of the atomically thin transistors in integrated circuits. Recent experimental demonstration showing the coexistence of metallic and semiconducting phases in the same monolayer MoS2, has attracted much attention for its use in ultra-low contact resistance-MoS2 transistors. Howbeit, the electronic structures of the metallic-to-semiconducting phase boundaries, which appear to dictate the carrier injection in such transistors, are not yet well understood. In this work, we first develop the geometrically optimized atomistic models of the 2H-1T′ hetero-phase structures with two distinct phase boundaries, β and γ. We then apply density functional theory to calculate the electronic structures for those optimized geometries. Furthermore, we employ non equilibrium Green’s function formalism to evaluate the transmission spectra and the local density of states in order to assess the Schottky barrier nature of the phase boundaries. Nonetheless, the symmetry of the source-channel and drain-channel junction, is a unique property of a metal-oxide semiconductor field effect transistor (MOSFET), which needs to be preserved while realizing sub-10 nm channel length devices using advanced technology. Employing experimental-findings-driven atomistic modeling technique, we demonstrate that such symmetry might not be preserved in an atomically thin phase-engineered MoS2- based MOSFET. It originates from the two distinct atomic patterns at phase boundaries (β and β*) when the semiconducting phase (channel) is sandwiched between the two metallic phases (source and drain). Next, using first principles based quantum transport calculations we demonstrate that due to the clusterization of “Mo” atoms in 1T′ MoS2, the transmission along the zigzag direction is significantly higher than that in the armchair direction. Moreover, to achieve excellent impedance matching with various metal contacts (such as, “Au”, “Pd”, etc.), we further develop the atomistic models of metal-1T′ MoS2 edge contact geometries and compute their resistance values. Other than the charge carrier transport, analysing the heat transport across the channel is also crucial in designing the ultra-thin next generation transistors. Hence, in this thesis work, we have investigated the electro-thermal transport properties of single layer MoS2, in quasi ballistic regime. Besides the perfect monolayer in its pristine form, we have also considered various line defects which have been experimentally observed in mechanically exfoliated MoS2 samples. Furthermore, a comprehensive study on the phonon thermal conductivity of a suspended monolayer MoS2, has been incorporated in this thesis. The studies presented in this thesis could be useful for understanding the carrier transport in atomically thin devices and designing the ultra-thin next generation transistors.

Les transistors organiques à effet de champ (OFETs) ont aujourd’hui des performances qui permettent d’envisager la réalisation de circuits électroniques plus ou moins complexes. Cependant, ces dispositifs doivent encore être améliorés en termes de performance et de stabilité sous air avant d’être commercialisés. Le premier objectif de cette thèse est de réaliser des OFETs stables à l’air avec des performances atteignant l’état de l’art, tout en simplifiant leur procédé de fabrication. Le dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene (DNTT),petite molécule référence, a été choisie comme couche active des dispositifs pour chaque étude. En insérant une couche interfaciale d’oxyde entre le matériau de contact et le SCO de nos OFETs, une étude a été menée sur la réduction de la résistance de contact, qui affecte la mobilité effective des porteurs de charge mais peut également compliquer l’élaboration de circuits. Dans le but de réaliser des OFETs sur substrats flexibles opérant à de faibles tensions,un travail a été réalisé sur le dépôt d’un diélectrique à forte capacité dont la surface a ensuite été passivée et lissée par un polymère. Les transistors de type p obtenus présentent des performances hautes en termes de mobilité (2,4 cm2.V-1.s-1) et de ratio des courant On/Off (>106) avec une faible tension de seuil et aucune hystérésis. Le second objectif a été de réaliser des simulations sur ces OFETs optimisés avec le logiciel GoldenGate dans l’environnement Cadence Virtuoso®, pour obtenir les paramètres nécessaires à l’élaboration d’un circuit amplificateur. Enfin, des composants passifs (résistances) ont été développés et un circuit détecteur d’amplitude sur substrat flexible a été élaboré et testé. / Organic field effect transistors (OFETs) have huge potential in the applications of future electronics, such as flexible circuits and displays or medical application. However, stability and performances of OFETs need to be improved, so as to reach the real market applications.First objective of this work is to realize air stable OFETs with state of the art performance. To that end, several approaches have been applied with special focus on process simplification. Small molecule, dinaphtho[2,3-b:2',3‘-f]thieno[3,2-b]thiophene (DNTT) has been chosen as the active layer for all devices studies. Metal electrodes in combination with oxide interfacial layers were investigated to decrease the contact resistance, which not only affects eventual mobility that can be achieved but also complicates circuit design. A systematic study was carried out to fabricate high capacitance dielectric layer and passivating the surface with proper interfacial layers. These approaches allowed to obtain high performance OFET on plastic substrate with high mobility (2.4cm2.V-1.s-1), high current on/off ratio (> 106), low threshold voltage and no hysteresis As the second objective, OFET devices were simulated using GoldenGate (with Cadence Virtuoso® environment) to derive relevant parameters, which helped to design amplifier circuit. Finally, passive component (resistance) has been developed and final circuit was realized and characterized.

A eletrônica digital desempenha papel essencial no desenvolvimento e manutenção dos padrões de vida em prática hoje no mundo. A peça fundamental para a criação desta era tecnológica é sem dúvidas o transistor. Com o advento de novos materiais, a busca por transistores que oferecem novas oportunidades de processamento e aplicação permitiu que uma nova área fosse criada: a eletrônica orgânica. Transistores de efeito de campo baseados em filmes finos de materiais orgânicos têm recebido grande atenção nas últimas décadas. Apresentamos um estudo experimental e teórico de transistores de efeito de campo a base de filmes finos orgânicos. Foram caracterizados transistores usando um derivado do pentaceno (TMTES-pentaceno) como camada ativa em um dispositivo feito sobre Si/SiO2. Mostramos que a inclusão do semicondutor orgânico em uma matriz polimérica isolante ajuda a manter a estabilidade termo mecânica do dispositivo. Foi desenvolvido um modelo que levasse em conta as resistências parasíticas para explicar o comportamento do transistor em função da temperatura. Também foram construídos e caracterizados transistores usando rr-P3HT como semicondutor e PMMA como isolantes. Apresentamos transistores do tipo Top-Gate e Bottom-Gate com mobilidade máxima de 7 x 10-3 cm2/V.s. Valores de razão ON/OFF de ~ 900 foram encontrados nos transistores otimizados. O comportamento dos transistores é analisado em função da temperatura e os modelos de aproximação de canal gradual e de Vissenberg-Matters foram aplicados para extração dos parâmetros de interesse. Por fim, apresentamos um modelo de corrente de canal baseado na resolução 2D numérica da equação de Poisson usando as idéias de Vissenberg-Matters para a concentração de cargas em função do potencial local. O modelo, embora ainda nos primeiros estágios de desenvolvimento, prevê a saturação da corrente nas curvas de saída simuladas sem limitações de regime de validade. / Digital electronics plays an essential role in the development and maintenance of living standards into practice in the world today. The cornerstone for the creation of this technological age is undoubtedly the transistor. With the advent of new materials, the search for transistors that offer new opportunities in processing and application allowed a new area to be created: the organic electronics. Field effect transistors based on organic thin films have received great attention in recent decades. We report an experimental and theoretical study of field effect transistors based on organic thin films. We characterized transistors manufactured using a derivative of pentacene (TMTES-pentacene) as the active layer in a device and using Si/SiO2 as gate and insulator. We show that the inclusion of the organic semiconductor in an insulating polymeric matrix helps to maintain the termo-mechanical stability of the device. A model was developed that take into account the parasitic resistances and to explain the behavior of the transistor as a function of temperature. We also present the manufacturing and characterization process of transistors using rr-P3HT as semiconductor and PMMA as insulator. We report Top-Gate and Bottom-Gate transistors with maximum mobility of 7 x 10-3 cm2/V.s. The maximun ON/OFF ratio of ~ 900 was found for the optimized transistors. The behavior of the transistors was analyzed as a function of temperature and both gradual channel approximation and Vissenberg-Matters models were applied for extracting the parameters. Finally, we present a channel current model based on the resolution of 2D numerical Poisson equation using the ideas of Vissenberg-Matters to the calculate the concentration of charges due to the local potential. The model, although still in the early stages of development, predicts the saturation current at output simulated curves with no limitation of regime validity.

Biossensores que empregam dispositivos de efeitos de campo podem ser obtidos em diversas arquiteturas, incluindo dispositivos Eletrólito-Isolante-Semicondutor (EIS), que são capacitores em que o eletrodo metálico é substituído por um filme e uma solução. Medindo-se a capacitância em função do potencial aplicado, é possível detectar variações de pH oriundas de reações ou interações entre o filme e o analito. Nesta dissertação, sensores foram produzidos com a adsorção de filmes automontados de dendrímero (PAMAM) e nanotubos de carbono (SWNT) num chip. Medidas de espectroscopia de impedância foram realizadas para investigar o crescimento de cada bicamada do filme automontado, e os dados foram analisados com circuitos equivalentes que continham uma capacitância de dupla camada, um elemento de fase constante e uma capacitância para a região de depleção. Para o chip, os melhores ajustes foram obtidos na frequência de 2 kHz, em que a concentração de dopantes foi 6,6x1020 m-3 para o chip com isolante de SiO2 e de 1,1x1021 m-3 para o chip com isolante de SiO2/Ta2O5. O potencial de banda plana foi -0,2 V e -0,06V, respectivamente. Para os chips recobertos com os filmes de PAMAM/SWNT, observamos que a região de depleção é causada pelas cargas positivas do PAMAM. Com relação às implicações para biossensores, verificamos que o desempenho ótimo deve ser obtido com 3 bicamadas de PAMAM/SWNT. Isso pode explicar a observação empírica na literatura de que existe uma espessura ideal dos filmes para um desempenho otimizado. / Biosensors based on field effect devices can be produced with several architectures, including Electrolyte-Insulator-Semiconductor (EIS) devices, which are capacitors where conventional metal electrodes are replaced by a sensing layer and an electrolyte solution. By measuring the capacitance as a function of the bias voltage, it is possible to detect pH changes that may originate from reactions or interactions between the film in the sensing unit and the analyte. In this study sensors were obtained by adsorbing layer-by-layer (LbL) films made with dendrimers (PAMAM) and carbon nanotubes (SWNT) on a semiconductor chip. Impedance spectroscopy measurements were performed to monitor the growth of each bilayer in the LbL film, whose data were analyzed with equivalent circuits containing a double-layer capacitance, a constant phase element and a capacitance for the depletion region. The results for the semiconductor chip could be best fitted for a frequency of 2 kHz, where the doping concentration was 6.6 x1020 m-3 for the insulating SiO2 layer and 1.1 x1021 m-3 for the SiO2/Ta2O5 layer. The flat band voltage was -0.2 V and -0.06 V, respectively. In the analysis of the chip coated with different numbers of PAMAM/SWNT bilayers, we found that the depletion region appears as a contribution from the positive charges in the PAMAM layer. With regard to implications for biosensors, we found that optimized performance should be reached with three PAMAM/SWNT bilayers, which may explain the empirical finding in the literature that an ideal thickness exists for enhanced performance.

Orientador: Carlos Alberto dos Reis Filho / Dissertação (mestrado) - Universidade Estadual de Campinas, Faculdade de Engenharia Eletrica e de Computação / Made available in DSpace on 2018-08-07T11:14:24Z (GMT). No. of bitstreams: 1 Couto_AndreLuisdo_M.pdf: 2940356 bytes, checksum: 959908541a3bc46b7b7035eb035de186 (MD5) Previous issue date: 2005 / Resumo: A integração de memórias e circuitos analógicos em um mesmo die oferece diversas vantagens: redução de espaço nas placas, maior confiabilidade, menor custo. Para tanto, prescindir-se de tecnologia específica à confecção de memórias e utilizar-se somente de tecnologia CMOS convencional é requisito para tal integração. Essa pode ser tanto mais eficiente quanto maior a capacidade de armazenagem de dados, ou seja, maior a densidade de informação. Para isso, memórias analógicas mostram-se bem mais adequadas, posto que em uma só célula (um ou dois transistores) podem ser armazenados dados que precisariam de diversas células de memórias digitais e, portanto, de maior área. Neste trabalho, transistores MOS com porta flutuante mostraram-se viáveis de serem confeccionados e resultados de caracterização como tipos de programação, retenção de dados e endurance foram obtidos. O trabalho apresenta as principais características dos FGMOS (Floating Gate MOS) e presta-se como referência à futuros trabalhos na área / Abstract:Monolithic integration of memories and analog circuits ,in the same die offers interesting advantages like: smaller application boards, higher robustness and mainly lower costs. Today, a profitable integration of these kind of circuit can only be possible using conventional CMOS technology, which allows efficiently extraordinary levels of integration. Thus, the possibility of integrating analog memories looks more suitable since one single cell (usually use one or two transistors) serves for storing the same data stored by few digital memory cells, therefore, they requiring less area. In this work, it was implemented different memory cells together with few devices using floating gate MOS transistors and manufactured by a conventional CMOS technology. Differemt sort of programrning', data retention, and endurance were characterized as well as the main characteristics of the FGMOS (Floating Gate MOS) were obtained. The results of their characterization reveal that is possible to make and' to program fIoating gate MOSFETS analog memories and must serve as starting-point and reference for new academic studies / Mestrado / Eletrônica, Microeletrônica e Optoeletrônica / Mestre em Engenharia Elétrica

Orientador: Peter Jurgen Tatsch / Tese (doutorado) - Universidade Estadual de Campinas, Faculdade de Engenharia Eletrica e de Computação / Made available in DSpace on 2018-08-15T23:27:09Z (GMT). No. of bitstreams: 1 Manera_LeandroTiago_D.pdf: 3739799 bytes, checksum: 12a6fc4ebbea20e529e4e7e2c7c5a761 (MD5) Previous issue date: 2010 / Resumo: Este trabalho teve como objetivo a montagem de um sistema de caracterização de ruído de alta e de baixa freqüência, utilizando equipamentos disponíveis no Centro de Componentes Semicondutores da Unicamp. Foi montado um sistema para a caracterização do ruído de baixa freqüência em dispositivos semicondutores e desenvolveu-se um método para a análise da qualidade de interfaces e cálculo de cargas, utilizando o ruído 1/f. Na descrição do ruído em baixa freqüência é apresentado em detalhes todo o arranjo utilizado para a medição, além dos resultados da medida em transistores nMOS e CMOS do tipo p e do tipo n fabricados no Centro. Detalhes importantes sobre o cuidado com a medição, tais como a utilização de baterias para a alimentação dos dispositivos e o correto aterramento, também são esclarecidos. A faixa de freqüência utilizada vai de 1 Hz até 100 KHz. Como aplicação, a medida de ruído é utilizada como ferramenta de diagnóstico de dispositivos semicondutores. Resultados destas medidas também são apresentados. Foi desenvolvido também um sistema para a medição do ruído em alta freqüência. A caracterização teve como objetivo determinar o parâmetro conhecido como Figura de Ruído. Apresenta-se além da descrição do arranjo utilizado na medição, os equipamentos e a metodologia empregada. Em conjunto com as medidas de ruído também são apresentados os resultados das medidas de parâmetros de espalhamento. Para a validação do método de obtenção desse conjunto de medidas, um modelo de pequenos sinais de um transistor HBT, incluindo as fontes de ruído é proposto, e é apresentado o resultado entre a medição e a simulação. A faixa disponível para medida vai de 45 MHz até 30 GHz para os parâmetros de espalhamento e de 10 MHz até 1.6 GHz para medida de figura de ruído / Abstract: The main goal of this work is the development of a noise characterization system for high and low frequency measurements using equipments available at the Center for Semiconductor Components at Unicamp. A low noise characterization system for semiconductors was built and by means of 1/f noise measurement it was possible to investigate semiconductor interface condition and oxide traps density. Detailed information about the test set-up is presented along with noise measurement data for nMOS, p and n type CMOS transistors. There is also valuable information to careful conduct noise measurements, as using battery powered devices and accurate grounding procedures. The low noise set-up frequency range is from 1 Hz up to 100 KHz. Noise as a diagnostic tool for quality and reliability of semiconductor devices is also presented. Measurement data is also shown. A measurement set-up for high frequency noise characterization was developed. Measurements were carried out in order to determine the noise figure parameter (NF) of the HBT devices. Comprehensive information about the test set-up and equipments are provided. Noise data measurements and s-parameters are also presented. In order to validate the measurement procedure, a small signal model for HBT transistor including noise sources is presented. Comparisons between simulation and measured data are performed. The s-parameters frequency range is from 45 MHz to 30 GHz, and noise set-up frequency range is from 10 MHz up to 1.6 GHz / Doutorado / Eletrônica, Microeletrônica e Optoeletrônica / Doutor em Engenharia Elétrica

Orientador: José Alexandre Diniz / Tese (doutorado) - Universidade Estadual de Campinas, Faculdade de Engenharia Elétrica e de Computação / Made available in DSpace on 2018-08-22T13:21:22Z (GMT). No. of bitstreams: 1 Barros_AngelicaDenardide_D.pdf: 3021280 bytes, checksum: 8f60fdfa3cbdfc2f485daac1670de328 (MD5) Previous issue date: 2013 / Resumo: O objetivo deste trabalho é a obtenção e caracterização de filmes finos de óxido de titânio (TiOx) e de óxido de zinco (ZnO) para aplicações em sensores baseados em transistores de efeito de campo elétrico sensíveis a íons (Ion Sensitive Field Effect Transistor- ISFET) e de ondas acústicas de superfície (Surface Acoustic Waves - SAW), respectivamente. Desta forma, dois diferentes tipos de sensores foram obtidos. O primeiro é o sensor químico ISFET, cujos óxidos de porta foram os filmes de TiOx. Os filmes de Ti foram depositados sobre substrato de Si através do método de evaporação por feixe de elétrons, e, através do método de pulverização catódica (sputtering). Em seguida foram oxidados em forno térmico de processamento rápido (RTP). A caracterização estrutural ocorreu através de elipsometria, de microscopia de força atômica, de espectroscopia Raman, de difração de raios-X e de espectroscopia de absorção de raios-X próximo da borda, constatando a estrutura cristalina tetragonal referente à forma rutilo do TiO2. A caracterização elétrica da melhor amostra através da curva C-V demonstrou constante dielétrica igual a 8, densidade de estados na interface da ordem de 10-10eV-1.cm-2 e densidade de corrente da ordem de 10-4A/cm2. O MOSFET apresentou tensão Early da ordem de kV, e, resistência de saída da ordem de M?. Este dispositivo possui tensão de limiar igual a 0,30V, corrente de fuga da ordem de 10-8A e transcondutância igual a 12?S. O ISFET apresentou sensibilidade em corrente de 63?A/pH e sensibilidade em tensão equivalente a 64mV/pH, valor que encontra-se próximo do esperado de 59mV/pH (limite de Nernst). O segundo sensor é baseado em ondas acústicas de superfície. Esta tese se dedicou na integração deste sensor sobre substrato de Si, que não sendo piezelétrico impossibilita a geração de ondas acústicas. Como alternativa, o ZnO, que é piezelétrico, foi depositado sobre um filme fino de SiO2 sobre Si, tornando viável a confecção de dispositivos do tipo SAW e permitindo o estudo do transporte de cargas aprisionadas nos mínimos e máximos do potencial piezelétrico gerado pelo óxido de zinco sobre o Si. O filme de ZnO depositado por sputtering foi analisado por difração de raios-X apresentando orientação cristalina hexagonal na direção (0002). A onda acústica foi analisada através dos parâmetros de espalhamento de rede e por interferometria. Na interface SiO2/Si, onde ocorre o transporte acústico, o campo piezelétrico vale 0,56kV/cm. O valor da velocidade de propagação da onda acústica é igual a 4243m/s (obtida por simulação, considerando a frequência de ressonância dos IDTs igual a 750MHz, e o comprimento de onda acústico igual a 5,6?m). O transporte de pares elétrons-lacunas gerados por laser foi detectado na região de coleção de cargas da junção lateral p-i-n para distâncias superiores a 50?m e para valores de PRF entre -10dBm e 0dBm. Isto resultou na eficiência de coleção de pares em até 12% (laser sobre a junção), e de 3,5% com o laser 50?m distante da junção. O desenvolvimento destes sensores sobre substrato de Si permitirá a integração com circuitos de condicionamento de sinais fabricados em tecnologia CMOS / Abstract: The aim of this work is to obtain and characterize thin titanium oxide (TiOx) films and zinc oxide (ZnO) films for applications in sensors based on ion sensitive field effect transistors (ISFET) and surface acoustic waves (SAW), respectively. In this way, two different types of sensors were obtained. The first is the chemical sensor ISFET, with TiOx as gate oxides. Ti films were deposited on Si substrate by electron beam evaporation and sputtering. Then, the Ti films were oxidized in rapid thermal processing oven (RTP). The Structural characterization occurred through ellipsometry, atomic force microscopy, Raman spectroscopy, X-ray diffraction and x-ray absorption near edge spectroscopy, denoting the tetragonal crystal structure of the rutile form of TiO2. Electrical characterization of the best sample through the C-V curve showed dielectric constant equal to 8, interface states density in the order of 10-10eV-1.cm-2 and current density of the order of 10-4/cm2. The MOSFET presented Early voltage in the order of kV, and output resistance in order of M?. This device has threshold voltage equal to 0.30V, leakage current on the order of 10-8A and transconductance equal to 12?S. The ISFET presented current sensitivity equal to 63?A/pH and voltage sensitivity equivalent to 64mV/pH, which is close to the expected 59mV/pH determined by the Nernst limit. The second sensor is based on surface acoustic waves. This thesis was devoted to the integration of this sensor on the Si substrate, which is not piezoelectric and therefore doesn't allow the generation of acoustic waves. Alternatively, the ZnO which is piezoelectric, when deposited on a thin film of SiO2 on Si, make possible the manufacture of SAW devices and allows the study of carriers transport trapped in the minimum and maximum of the piezoelectric potential generated by the zinc oxide on Si. The ZnO film deposited by sputtering was analyzed by x-ray diffraction showing hexagonal crystalline orientation in the direction (0002). The acoustic wave was analyzed through the network analyzer (scattering parameters) and the interferometer. In SiO2/Si interface, where transport occurs, the piezoelectric field is 0, 56kV/cm. the value of the acoustic wave propagation speed is equal to 4243m/s (obtained by simulation, considering the IDTs resonance frequency equal to 750MHz and the acoustic wavelength equal to 5.6?m). The carrier transport of electrons-holes generated by the incidence of a laser was detected in the collection region of the lateral p-i-n junction for distances exceeding 50 ?m and PRF values between-10dBm and 0dBm. This resulted in a collection efficiency up to 12% (laser on the junction), and 3.5% when the laser was 50?m away from the junction. The development of these sensors on Si substrate will allow integration with signal conditioning circuits manufactured in CMOS technology / Doutorado / Eletrônica, Microeletrônica e Optoeletrônica / Doutora em Engenharia Elétrica

This thesis aims at investigating size dependence of properties of nanostructures from the point of view of a general scaling theory that smoothly connects properties of the bulk to that of nanostructures. Two different examples of a ``static'' and a ``dynamic'' property are considered in this study. The first example studied is of size dependence of coefficient of thermal expansion (CTE) which a static property of nanostructures. The CTE of nanobars and nanoslabs is studied using equilibrium molecular dynamics and dynamical matrix formulation in an electrically insulating medium. It is found that the fractional change in CTE from the bulk value scales inversely with the size of the nanostructures, thus, showing a simple description in terms of a scaling theory. In the second part, electron transport in carbon nanotube field effect transistors (CNTFETs) is studied using Landauer formalism. A CNTFET involves transport through a 1-d ballistic carbon nanotube channel with Schottky barriers (SB) at contacts which determines the transport characteristics. The CNT is modeled as a 1-d semiconductor having only two bands separated by an energy gap which depends inversely on tube diameter. After the contact is made, a self-consistent potential appears due to charge transfer between CNT and metal, which is calculated by solving Poisson equation. The electron transmission across the barriers is calculated using WKB approximation. Current and conductance are calculated using Landauer-Buttiker formula. Diameter dependence of properties like, conductance, threshold voltage, VON, etc. is calculated. It is found that there is no simple scaling for a property for small values of diameter. The scaling form is, however, found to be valid for larger diameters. Also, other calculated device characteristics are in close agreement with experiments. The model presented in this thesis is the first detailed study illustrating the applicability of the scaling approach to the properties of nanostructures. The static properties show scaling behavior, while ``dynamic'' properties derived from electronic response do not.

In the last three decades carbon nanomaterials such as fullerenes, carbon nanotubes and graphene have attracted significant attention from the scientific community due to their unique electronic, optical, thermal, mechanical and chemical properties. Among them carbon nanotubes and graphene have been used in numerous applications for future nanoelectronics, biochemical sensors and energy harvesting technologies due to their unique properties including exceptionally high electronic conductivity and mechanical strength. Carbon nanotubes are cylindrical structures and considered to be large mesoscopic molecules with high aspect ratios. Graphene is a single atomic layer of crystalline graphite and prepared by stripping layers off the graphite using Scotch tape. Apart from this scotch tape method, chemical ex-foliation and reduction of graphite oxide produces large amounts of reduced graphene oxide which has similar properties as graphene. This thesis reports on the biosensors made of reduced graphene oxide and single walled carbon nanotubes based on their electronic properties. We also demonstrate the changes in electronic properties of single walled carbon nanotubes due to interactions with dendrimer molecules. Finally, the yielding and flow behaviour of graphene oxide nematic gel are discussed. Chapter 1 gives a general introduction about the preparation and characterization along with the electronic properties of the systems studied in this thesis, namely graphene oxide, reduced graphene oxide and single walled carbon nanotubes. We have also discussed about the experimental techniques such as Raman, UV-visibe and infrared spectroscopy, atomic force and scanning tunneling microscopy and different types of rheometers used in this thesis work. In Chapter 2, we discuss top-gated field effect transistor characteristics of the devices made of reduced graphene oxide monolayer by dielectrophoresis. Raman spectrum of RGO flakes shows a single 2D band at 2687 cm 1, characteristic of a single layer graphene. The two probe current - voltage measurements of RGO flakes, deposited in between the patterned electrodes using a.c. dielectrophoresis show ohmic behavior with a resistance of 37kΩ. The temperature dependence of the resistance (R) of RGO measured between temperatures 305K to 393K yields the temperature coefficient of resistance of -9.5 10 4/K. Ambipolar nature of graphene flakes is observed upto a doping level of 6 1012/cm2 and carrier mobility of 50cm2/V-sec. The source - drain current characteristics shows a tendency of current saturation at high source - drain voltage which is analyzed quantitatively by a diffusive transport model. In Chapter 3, We demonstrate the detection of glucose molecules by using reduced graphene oxide (RGO) and aminophenylboronic acid (APBA) complex with detection limit of 5 nM. APBA functionalized RGO (APBA-RGO) flakes, prepared by stirring the aqueous GO suspension in the presence of APBA molecules at 100◦C, were used as conducting channel in our field effect transistor (FET) devices. The APBA-RGO complex formation was confirmed by atomic force microscopy (AFM), x - ray photoelectron, Raman and UV-visible spectroscopic studies. Detection of glucose molecules was carried out by monitoring the changes in electrical conductance of the APBA-RGO flake in the FET device. FET devices made of non-covelently functionalized APBA-RGO complex (nc-APBA-RGO) exhibited enhanced sensitivity over the devices made of covalently functionalized APBA-RGO complex (c-APBA-RGO). Change in normalized conductance in the FET devices made of nc-APBA-RGO flakes ( 85%) is 4 times more than that of in the devices made of c-APBA-RGO flakes in response to aqueous glucose solution with different concentrations. Specificity of APBA-RGO complex to glucose was proved from the observation of negligible change in electrical conductance of the FET devices made of nc-APBA-RGO complex after exposure to 10 mM lactose solution. Chapter 4 reports unipolar resistive switching in ultrathin films of chemically produced graphene (reduced graphene oxide) and multiwalled carbon nanotubes. The two - terminal devices with yield > 99% are made at room temperature by forming continuous films of graphene of thickness 20 nm on indium tin oxide coated glass electrode, followed by metal (Au or Al) deposition on the lm. These memory devices are non - volatile, rewritable with ON/OFF ratios up to 105 and switching times up to 10 s. The devices made of MWNT films are rewritable with ON/OFF ratios up to 400. The resistive switching mechanism is proposed to be nanogap formation. In the first part of Chapter 5, we study the interactions between SWNT and PETIM dendrimer by measuring the quenching of inherent fluorescence of the dendrimer. Also, the dendrimer - nanotube binding results in the increased electrical resistance of the hole-doped SWNT due to charge transfer interaction between the dendrimer and the nanotube. This charge transfer interaction was further corroborated by observing a shift in frequency of the tangential Raman modes of SWNT. Experimental studies were supplemented by all atom molecular dynamics simulations to provide a microscopic picture of the dendrimer - nanotube complex. The complexation was achieved through charge - transfer and hydrophobic interactions, aided by multitude of oxygen, nitrogen and n-propyl moieties of the dendrimer. We also studied the effect of acidic and neutral pH conditions on the binding affinities. In the second part, we show that SWNT decorated with sugar functionalized PETIM dendrimer is a very sensitive platform to quantitatively detect carbohydrate recognizing proteins, namely, lectins. The changes in electrical conductivity of SWNT in field effect transistor device due to carbohydrate - protein interactions forms the basis of this study. The mannose sugar attached PETIM dendrimers undergo charge - transfer interactions with the SWNT. The changes in the conductance of the dendritic sugar functionalized SWNT after addition of lectins in varying concentrations were found to follow the Langmuir type isotherm, giving the concanavalin A (Con A) - mannose affinity constant to be 8.5 106 M-1. The increase in the device conductance observed after adding 10 nM of Con A is same as after adding 20 µM of a non - specific lectin peanut agglutinin, showing the high specificity of the Con A - mannose interactions. The specificity of sugar-lectin interactions was characterized further by observing significant shifts in Raman modes of the SWNT. Chapter 6 reports the metal to semiconductor transition in metallic single-wall carbon nanotubes (SWNT) due to the wrapping of mannose attached poly (propyl ether imine) dendrimer (DM) molecule. Scanning tunneling spectroscopic (STS) measurements and ionic liquid top gated field effect transistor (FET) characteristics of the nanotube-dendrimer complex gives a band gap of 0.42eV, close to the E11 energy gap between the first van Hove singularities of 1.7nm diameter semiconducting nanotubes. The absence of Breit-Wigner-Fano (BWF) component in G band in the Raman spectrum of the nanotube-dendrimer complex corroborates the semiconductor nature of the tubes after wrapping with the dendrimer molecules. Dendrimer molecule breaks the symmetry in metallic SWNT by wrapping around it through the charge transfer interactions. In the first part of Chapter 7, we demonstrate a rigidity percolation transition and the onset of yield stress in a dilute aqueous dispersion of graphene oxide platelets (aspect ratio 5000) above a critical volume fraction of 3.75x10-4 with a percolation exponent of 2.4 ± 0.1.The viscoelastic moduli of the gel at rest measured as a function of time indicates the absence of structural evolution of the 3D percolated network of disks. However, a shear-induced aging giving rise to a compact jammed state and shear rejuvenation indicating a homogenous flow is observed when a steady shear stress (σ ) is imposed in creep experiments. We construct a shear diagram (σ vs volume fraction ϕ) and the critical stress above which shear rejuvenation occurs is identified as the yield stress σ y of the gel. The minimum steady state shear rate ƴm obtained from creep experiments agrees well with the end of the plateau region in a controlled shear rate flow curve, indicating a shear localization below ƴm. A steady state shear banding in the plateau region of the flow curve observed in particle velocimetry measurements in a couette geometry confirms that the dilute suspensions of GO platelets form a thixotropic yield stress fluid (TYSF). In the second part, we report that the creep experiments on a nematic liquid crystalline suspension of Graphene Oxide platelets which was established recently as a TYSF exhibit two characteristic timescales Tc and Tf marking the onset of yielding, and a final steady state of flow respectively. We show that both Tc and Tf exhibit a power law dependence on the applied stress σ which can be linked to the steady state flow behaviour of a TYSF. The smooth transition from Andrade creep to the onset of flow with ƴ~ t 0.7 at a critical strain ƴc for different applied stresses, is well captured by the master curve for the creep compliance, obtained through a simple scaling of the creep times with either Tc or Tf . We propose that the absence of diverging timescales for onset of flow as σ→ yield stress σy from above, is a characteristic feature of TYSF. The thesis concludes with a summary of the main results and a brief account of the scope of future work described in Chapter 8.

Cette thèse vise à développer un capteur d’ions cuivre dans des échantillons humains tels que le plasma ou les urines où l’accumulation des ions induit la maladie de Wilson. Le manque d’outil de diagnostic efficace et non invasif rend cette maladie traitable, potentiellement fatale. Notre capteur, basé sur la technologie des transistors à effet de champ de type metal-oxide-semiconducteur, a l’originalité d’utiliser une monocouche de lipide de type DC8,9PC de 2.4 nm d’épaisseur comme diélectrique de grille. Nous démontrons dans cette thèse que ces lipides peuvent être chimiquement modifiés en de monocouches, à stabilité mécanique et électrique élevée, transformées en sondes spécifiques par greffage sur le groupement de tête des lipides d’une fonction chélatante spécifique aux ions cuivre. La monocouche lipidique est formée à la surface du canal semiconducteur du transistor par fusion vésiculaire et est stabilisée par réticulation des lipides suivant un protocole que nous avons développé. Dans une première partie, nous décrivons la fabrication du transistor ainsi que l’ingénierie chimique des lipides avec le chélateur. Des mesures, en solutions aqueuses contenant des ions cuivre et d’autres ions potentiellement compétiteurs, ont validé la sensibilité et la spécificité du capteur. La deuxième partie est dédiée à l’optimisation des monocouches en tant qu’isolants électriques stables. Nous introduisons dans cette thèse la notion de double polymérisation des lipides dans la monocouche avec réticulation des chaînes aliphatiques et des groupements de tête. Nous démontrons que celle-ci conduit à l’amélioration drastique des propriétés mécaniques et électriques des monocouches. / This thesis aims at developing a sensor for the detection of Cu2+ in human samples such as urine. Copper is an ion of pathological interest in the body and its accumulation in tissues is responsible for the Wilson disease. While the disease can be effectively treated, the lack of efficient and non-invasive diagnosis techniques makes it potentially deadly. Our project aims for developing an efficient, sensitive, specific, and low cost sensor device based on metal-oxide-semiconductor field effect transistor technology and has the originality of using a 2.4 nm thick monolayer of DC8,9PC lipids as gate dielectric. We demonstrate that such lipids can be chemically engineered to allow the fabrication of monolayers with high mechanical and electrical stability and to confer them specific probe function. Specificity of the sensor is given by the grafting of a copper specific chelator to the lipids head-groups. The lipid monolayer is formed on the transistor semiconducting channel by the vesicle fusion. In the first part of the thesis, we describe the fabrication of the transistor including the chemical engineering of the lipids with the chelator. Sensitivity and specificity measurements were realized in aqueous solutions containing copper ions and potentially competitive ions. The second part is dedicated to improving the performances of the lipid monolayer as a stable insulator. We introduce in this thesis the concept of double polymerization of the lipids in the monolayer with a reticulation at both the levels of their aliphatic chains and their head-groups. We demonstrate that that leads to drastic improvements of both the mechanical and electrical properties of the monolayer.