<p>Traditional dosimetric devices are inherently point dose dosimeters (PDDs) and can only measure the magnitude of the radiation exposure; hence, they are one-dimensional (1D). To measure the magnitude and spatial location of dose within a volume either several PDDs must be used at one time, or one PDD must be translated from point-to-point. Using PDDs for spatially distributed, two-dimensional (2D), dosimetry is laborious, time consuming, limited in spatial resolution, susceptible to positioning errors, and the currently accepted approach to measuring dose distribution in 2D. This work seeks to expand the current limits of indirectly ionizing radiation dosimetry by using radiochromic film (RCF) for a high-resolution, accurate dosimetry system. Using RCF will extend the current field of radiation dosimetry to spatially quantitative 2D and three-dimensional (3D) measurements. </p> <p>This work was generalized into two aims. The first aim was the development of the RCF dosimetry system; it was accomplished by characterizing the film and the readout devices and developing a method to calibrate film response for absolute dose measurements. The second aim was to apply the RCF dosimetry system to three areas of dosimetry that were inherently volumetric and could benefit from multiple dimensional (2D or 3D) dose analysis. These areas were representative of a broad range of radiation energy levels and were: low-mammography, intermediate-computed tomography (CT), and high-radiobiologcal small animal irradiation and cancer patient treatment verification. The application of a single dosimeter over a broad range of energy levels is currently unavailable for most traditional dosimeters, and thus, was used to demonstrate the robustness and flexibility of the RCF dosimetry system.</p> <p>Two types of RCF were characterized for this work: EBT and XRQA film. Both films were investigated for: radiation interaction with film structure; light interaction with film structure for optimal film readout (densitometry) sensitivity; range of absorbed dose measurements; dependence of film dose measurement response as a function of changing radiation energy; fractionation and dose rate effects on film measurement response; film response sensitivity to ambient factors; and stability of measured film response with time. EBT film was shown to have the following properties: near water equivalent atomic weight (Z_eff); dynamic dose range of (10<super>-1</super>-10<super>2</super>) Gy; 3% change in optical density (OD) response for a single exposure level when exposed to radiation energies from (75-18,000) kV; and best digitized using transmission densitometry. XRQA film was shown to have: a Zeff of ~25; a 12 fold increase in sensitivity at lower photon energies for a dynamic dose range of 10-3-100 Gy, a difference of 25% in OD response when comparing 120 kV to 320 kV, and best digitized using reflective densitometry. Both XRQA and EBT films were shown to have: a temporal stability (&#916;OD) of ~1% for t > 24 hr post film exposure for up to ~20 days; a change in dose response of ~0.03 mGy hr-1 when exposed to fluorescent room lighting at standard room temperature and humidity levels; a negligible dose rate and fractionation effect when operated within the optimal dose ranges; and a light wavelength dependence with dose for film readout.</p> <p>The flat bed scanner was chosen as the primary film digitizer due to its availability, cost, OD range, functionality (transmission and reflection scanning), and digitization speed. As a cost verses functionality comparison, the intrinsic and operational limitations were determined for two flat bed scanners. The EPSON V700 and 10000XL exhibited equal spatial and OD accuracy. The combined precision of both the scanner light sources and CCD sensors measured < 2% and < 7% deviation in pixel light intensities for 50 consecutive scans, respectively. Both scanner light sources were shown to be uniform in transmission and reflection scan modes along the center axis of light source translation. Additionally, RCFs demonstrated a larger dynamic range in pixel light intensities, and to be less sensitive to off axis light inhomogeneity, when scanned in landscape mode (long axis of film parallel with axis of light source translation). The EPSON 10000XL demonstrated slightly better light source/CCD temporal stability and provided a capacity to scan larger film formats at the center of the scanner in landscape mode. However, the EPSON V700 only measured an overall difference in accuracy and precision by 2%, and though smaller in size, at the time of this work, was one sixth the cost of the 10000XL. A scan protocol was developed to maximize RCF digitization accuracy and precision, and a calibration fitting function was developed for RCF absolute dosimetry. The fitting function demonstrated a superior goodness of fit for both RCF types over a large range of absorbed dose levels as compared to the currently accepted function found in literature.</p> <p>The RCF dosimetry system was applied to three novel areas from which a benefit could be derived for 2D or 3D dosimetric information. The first area was for a 3D dosimetry of a pendant breast in 3D-CT mammography. The novel method of developing a volumetric image of the breast from a CT acquisition technique was empirically measured for its dosimetry and compared to standard dual field digital mammography. The second area was dose reduction in CT for pediatric and adult scan protocols. In this application, novel methodologies were developed to measure 3D organ dosimetry and characterize a dose reduction scan protocol for pediatric and adult body habitus. The third area was in the field of small animal irradiation for radiobiology purposes and cancer patient treatment verification. Two methods for small animal irradiation were analyzed for their dosimetry. The first technique was within a gamma irradiator environment using a <super>137</super>Cs source (663 keV), and the second, a novel approach to mouse irradiation, was developed for fast neutron (10 MeV) irradiated by a Tandem Van de Graff accelerator in a <super>2</super>H(d,n)<super>3</super>He reaction. For the patient cancer treatment, RCF was used to verify a 3D radiochromic plastic, PRESAGETM, using multi-leaf collimation (MLC) on a medical linear accelerator (LINAC) with 6 MV x-rays. The RCF and PRESAGE<super>TM</super> dosimeters were employed to verify a simple respiratory-gated lung treatment for a small nodule; the film was considered the gold standard. In every case, the RCF dosimetry system was verified for accuracy using a traditional PDD as the golden standard. When considering all areas of radiation energy applications, the RCF dosimetry system agreed to better than 7% of the golden standard, and in some cases within better than 1%. In many instances, this work provided vital dosimetric information that otherwise was not captured using the PDD in similar geometry. This work demonstrates the need for RCF to more accurately measure volumetric dose.</p> / Dissertation

Gallium nitride (GaN) has been targeted for use in high power (>30 W/mm) and high frequency (>160 GHz) application due to its wide band gap and its large break down field. One of the most significant advances in GaN devices has evolved from the AlGaN/GaN high electron mobility transistor (HEMT). As a result of the large power densities being applied to these devices there can develop intense hot spots near areas of highest electric field. The hot spot phenomenon has been linked to a decrease in device reliability through a range of degradation mechanisms. In order to minimize the effect that hot spot temperatures have on device reliability a detailed understanding of relevant transport mechanisms must be developed. This study focuses on two main aspects of phonon transport within GaN devices. The first area of focus was to establish an understanding of phonon relaxation times within bulk GaN. These relaxation times were calculated from an application of Fermi's Golden Rule and explicitly conserve energy and crystal momentum. This analysis gives insight into the details behind the macroscopic thermal conductivity parameter. Once relaxation times for GaN were established a multiscale phonon transport modeling methodology was developed that allowed the Boltzmann Transport Equation to be coupled to the energy equation. This coupling overcomes some computational limits and allows for nanoscale phenomena to be resolved within a macroscopic domain. Results of the transport modeling were focused on benchmarking the coupling method as well as calculating the temperature distribution within an operating 6 finger HEMT.

This thesis describes the design, fabrication and characterization of AlGaN/GaN Heterostructure Field E ect Transistors (HFETs) grown by a Metal Organic Chemical Vapor Deposition (MOCVD) on sapphire substrates. The objective of this research is to develop AlGaN/GaN power devices with high breakdown voltage (greater than 1 kV) and low turn-on resistance. Various characteristics such as current drive (Idss), transconductance (gm) and threshold voltage (Vth) have also been measured and the results have been discussed. Two major challenges with the development of high breakdown voltage AlGaN/GaN HFETs in the past have been high material defect density and non-optimized fabrication technologies which gives rise to bu er leakage and surface leakage, respectively. In this thesis, mesa isolation, ohmic and gate metal contacts, and passivation techniques, have been discussed to improve the performance of these power transistors in terms of low contact resistance and low gate leakage. The relationship between breakdown voltage and Rds(ON)A with respect to the gate-drain length (Lgd) is also discussed. First, unit cell devices were designed (two-fingered cells with Wg = 100, 300, 400 m) and characterized, and then they were extended to form large area devices (upto Wg = 40 mm). The design goals were classied into three parts: - High Breakdown Voltage: This was achieved by designing devices with variations in Lgd, - Low turn-on resistance: This was achieved by optimizing the annealing temperatures as well as incorporating additional thick metal pads, as well as optimizing the passivation etch recipe, - Low Gate Leakage: The gate leakage was reduced signicantly by using a gate metal with a larger barrier height. All devices with Lgd larger than 10 m exhibited excellent breakdown voltage characteristics of over 800 V, and it progressed as the Lgd increased. The turn-on resistance was also reduced signicantly below 20 m-cm2, for devices with Lgd = 15, 25, and 20 m. The gate leakage was measured for all devices upto 200 V, and was in the range of 10-100 nA, which is one of the best values reported for multi-ngered devices with Lgd in the range of 2.4-5 mm. Some of the key challenges faced in fabrication were determining a better gate metal layer to reduce gate leakage, optimizing the passivation via etch recipe, and reducing surface leakage.

Kohlenstoffnanoröhren (engl. carbon nanotubes, CNT) verfügen über eine Vielzahl von herausragenden und möglicherweise nutzbringenden Eigenschaften. Die kontrollierte Integration von CNT in technische Systeme stellt noch immer eine große Herausforderung dar. Im Rahmen der vorliegenden Arbeit wurden neue Methoden für den Aufbau von Strukturen und Bauelementen aus CNT entwickelt, die auf Selbstorganisation bzw. bottom-up assembly basieren. Dabei kamen sowohl biochemische als auch physikalische Verfahren zum Einsatz. Einzelsträngige DNA wurde verwendet um CNT in wässrigen Medien zu suspendieren und zu vereinzeln. Beides sind wichtige Voraussetzungen, um die günstigen elektronischen Eigenschaften der CNT zugänglich zu machen. DNA-CNT-Suspensionen wurden sowohl spektroskopisch in ihrer Gesamtheit als auch kraftmikroskopisch auf molekularer Ebene untersucht. So konnten wesentliche Parameter des Herstellungsprozesses optimiert werden, um Suspensionen mit einem hohen Gehalt an langen, sauberen, vereinzelten CNT zu erhalten. Durch die Verwendung von funktionalisierten DNA-Molekülen ist es gelungen, Halbleiterquantenpunkte und Goldkolloide an CNT anzubinden. Im Fall der Quantenpunkte gelang dies mit Hilfe der Biotin-Streptavidin Bindung unter Anwendung des Prinzips der molekularen Erkennung. Die Anbindung dieser Nanopartikel kann als Prototyp für den DNA-vermittelten Strukturaufbau aus CNT angesehen werden. Zur Deposition von CNT in Elektrodenstrukturen wurde ein auf Dielektrophorese beruhendes Verfahren eingesetzt. Dabei ist es gelungen, die wesentlichen Parameter zu identifizieren, die für die Morphologie der abgeschiedenen CNT entscheidend sind. So konnte die Dichte der CNT-Verbindungen zwischen Elektroden von einzelnen Verbindungen über wenige bis hin zu sehr vielen parallel assemblierten CNT eingestellt werden. Durch ein sich selbst steuerndes Hintereinanderlagern von CNT war es möglich auch Elektroden zu verbinden, deren Abstand größer war als die Länge der verwendeten CNT. Durch gezieltes Eliminieren metallischer CNT-Strompfade nach der Deposition ist es gelungen, CNT-Feldeffekttransistoren (CNT-FETs) mit Schaltverhältnissen von bis zu sieben Dekaden herzustellen. Auch dieses Verfahren ist skalierbar und unkompliziert, da es sich selbst steuert. Es ist skalierbar und deshalb auch für technische Anwendungen geeignet. An Hand des Beispiels der Detektion von Ethanoldampf konnte gezeigt werden, dass die über Dielektrophorese aufgebauten CNT-FETs auch als Sensoren eingesetzt werden können. Durch eine Kombination der dielektrophoretischen Deposition von CNT und dem dielektrophoretisch gesteuerten Wachstum metallischer Nanodrähte konnte eine neuartige Hybridstruktur aus CNT und Palladium-Nanodrähten erzeugt werden. Ein solches Verfahren ist eine Voraussetzung für den Aufbau integrierter nanoskaliger Schaltkreise. Die vorliegenden Ergebnisse zeigen zahlreiche Möglichkeiten auf, verschiedenartige nanoskopische Objekte miteinander integrieren, um neue Anwendungen zu ermöglichen.

In der vorliegenden Arbeit werden durch den inversen piezoelektrischen Effekt kontrolliert Dehnungen in Lanthanmanganatschichten eingebracht und ihr Einfluss auf die Eigenschaften der Schichten untersucht. Dazu wird im ersten Teil der Arbeit ein Zweischichtsystem bestehend aus einer Manganatschicht aus La0,7Sr0,3MnO3, La0,8Ca0,2MnO3 oder La0,7Ce0,3MnO3 und einer piezoelektrischen Schicht aus PbZr0,52Ti0,48O3 untersucht. Der epitaktisch auf Einkristallsubstraten abgeschiedene Aufbau entspricht einer Feldeffekt-Transistor-Struktur. Neben den Effekten der Dehnung auf den elektrischen Widerstand der Manganatschicht wird auch der elektrische Feldeffekt untersucht. Durch mechanische Klemmung des Substrats können nur kleine Dehnungen in die Manganatschichten eingebracht werden. Um größere und homogene Dehnungen steuerbar in Manganatschichten einzubringen, werden im zweiten Teil der Arbeit La0,7Sr0,3MnO3 - Schichten auf piezoelektrischen Einkristallsubstraten der Verbindung (1-x)Pb(Mg1/3Nb2/3)O3 - xPbTiO3 mit x = 0,28 epitaktisch abgeschieden. Der Einfluss von mechanischen Dehnungen von bis zu 0,1% auf den elektrischen Transport, die ferromagnetische Übergangstemperatur und die Magnetisierung kann so eingehend untersucht werden. Es wird ein außergewöhnlich großer Einfluss von Dehnungen auf die Eigenschaften von La0,7Sr0,3MnO3 gefunden. / In this work, strain arising from the inverse piezoelectric effect is induced into lanthanum manganite thin films in order to change and control their properties. In the first part of this work, manganite films of the compositions La0.7Sr0.3MnO3, La0.8Ca0.2MnO3 or La0.7Ce0.3MnO3 are combined with a piezoelectric layer of the composition PbZr0.52Ti0.48O3 in a bilayer system. This structure is grown epitaxially on single crystal substrates and corresponds to a field-effect transistor setup. Besides effects of strain on the electrical resistance of the manganite layers, field effects are observed. Due to clamping of the substrate, only small strains can be induced to the manganite films. In order to apply larger and homogeneous controllable strain to the manganite layers, thin films of La0.7Sr0.3MnO3 are grown epitaxially on piezoelectric single crystal substrates of the composition (1-x)Pb(Mg1/3Nb2/3)O3 - xPbTiO3, x = 0.28. Strain levels up to 0.1% are reached. The influence of the strain on electrical transport, ferromagnetic transition temperature and magnetization is analyzed. A remarkably large influence of the strain on the properties of La0.7Sr0.3MnO3 is found.

<p>This thesis deals with the synthesis of electroactiveorganic compounds. The synthesis of ethylenedioxy-benzodioxinstri-dioxin and tetra-dioxin are described. These molecules wereprepared with the aim of creating donor molecules for cationicradical salts. The symmetric analogs of tri-dioxin,methylenedioxy-derivative and ethylenedioxy-naphthalene werealso synthesized. Three different cation radical salts with 2:1stoichiometries were obtained from tri-dioxin, whiletetra-dioxin merely provided polycrystalline materials.Tri-dioxin and tetra-dioxin were also successful as operationalmatrixes in PALDI-TOF.</p><p>Tetrathiafulvalenes with the2-dialkyl-amino-1,3-dithiolium-4-thiolate mesoion asbuilding-block was also synthesized. A series of doublyalkylthiol-substituted TTFs were prepared with the aim offorming self-assembly monolayers on gold surfaces in theapplication of organic thin film field-effect transistors.Film-formation for two TTFs were studied and they providedrelatively dense packed monolayers with a discrete distance ofthe TTF moiety from the gold surface.</p><p>The mesoionic compound was also for the first time used inan<i>umpolung</i>reaction. The electrophile obtained in situ bytreatment of mesoion with sulfuryl chloride was reacted with avariety of electron-rich aromatic compounds. From the receivedproducts three new arylthio-substituted TTFs weresynthesized.</p><p><b>Keywords:</b>Synthesis, Benzodioxin, Tetrathiafulvalene,Mesoion, Organic Conductor, Cation Radical Salt, CyclicVoltammetry, Electrocrystallization, Self-Assembly Monolayer,SAM, Organic Field-Effect Transistor, OFET</p>

The low dimensions of the state-of-the-art nanoscale transistors exhibit increasing quantum mechanical effects, which are no longer negligible. Gate tunneling current is one of such effects, that is responsible for high power consumption and high working temperature in microprocessors. This in turn put limits on further down scaling of devices. Therefore modeling and calculation of tunneling current is of a great interest. This work provides a review of existing models for the calculation of the gate tunneling current in MOSFETs. The quantum mechanical effects are studied with a model, based on a self-consistent solution of the Schrödinger and Poisson equations within the effective mass approximation. The calculation of the tunneling current is focused on models based on the calculation of carrier’s lifetime on quasi-bound states (QBSs). A new method for the determination of carrier’s lifetime is suggested and then the tunneling current is calculated for different samples and compared to measurements. The model is also applied to the extraction of the “tunneling effective mass” of electrons in ultrathin oxynitride gate dielectrics. Ultrathin gate dielectrics (tox<2 nm) consist of only few atomic layers. Therefore, atomic scale deformations at interfaces and within the dielectric could have great influences on the performance of the dielectric layer and consequently on the tunneling current. On the other hand the specific material parameters would be changed due to atomic level deformations at interfaces. A combination of DFT and NEGF formalisms has been applied to the tunneling problem in the second part of this work. Such atomic level ab initio models take atomic level distortions automatically into account. An atomic scale model interface for the Si/SiO2 interface has been constructed and the tunneling currents through Si/SiO2/Si stack structures are calculated. The influence of single and double oxygen vacancies on the tunneling current is investigated. Atomic level distortions caused by a tensile or compression strains on SiO2 layer as well as their influence on the tunneling current are also investigated. / Die vorliegende Arbeit beschäftigt sich mit der Berechnung von Tunnelströmen in MOSFETs (Metal-Oxide-Semiconductor Field Effect Transistors). Zu diesem Zweck wurde ein quantenmechanisches Modell, das auf der selbstkonsistenten Lösung der Schrödinger- und Poisson-Gleichungen basiert, entwickelt. Die Gleichungen sind im Rahmen der EMA gelöst worden. Die Lösung der Schrödinger-Gleichung unter offenen Randbedingungen führt zur Berechnung von Ladungsverteilung und Lebensdauer der Ladungsträger in den QBSs. Der Tunnelstrom wurde dann aus diesen Informationen ermittelt. Der Tunnelstrom wurde in verschiedenen Proben mit unterschiedlichen Oxynitrid Gatedielektrika berechnet und mit gemessenen Daten verglichen. Der Vergleich zeigte, dass die effektive Masse sich sowohl mit der Schichtdicke als auch mit dem Stickstoffgehalt ändert. Im zweiten Teil der vorliegenden Arbeit wurde ein atomistisches Modell zur Berechnung des Tunnelstroms verwendet, welche auf der DFT und NEGF basiert. Zuerst wurde ein atomistisches Modell für ein Si/SiO2-Schichtsystem konstruiert. Dann wurde der Tunnelstrom für verschiedene Si/SiO2/Si-Schichtsysteme berechnet. Das Modell ermöglicht die Untersuchung atom-skaliger Verzerrungen und ihren Einfluss auf den Tunnelstrom. Außerdem wurde der Einfluss einer einzelnen und zwei unterschiedlich positionierter neutraler Sauerstoffleerstellen auf den Tunnelstrom berechnet. Zug- und Druckspannungen auf SiO2 führen zur Deformationen in den chemischen Bindungen und ändern den Tunnelstrom. Auch solche Einflüsse sind anhand des atomistischen Modells berechnet worden.

Two graphene layers placed in close proximity offer a unique system to investigate interacting electron physics as well as to test novel electronic device concepts. In this system, the interlayer spacing can be reduced to value much smaller than that achievable in semiconductor heterostructures, and the zero energy band-gap allows the realization of coupled hole-hole, electron-hole, and electron-electron two-dimensional systems in the same sample. Leveraging the fabrication technique and electron transport study in dual-gated graphene field-effect transistors, we realize independently contacted graphene double layers separated by an ultra-thin dielectric. We probe the resistance and density of each layer, and quantitatively explain their dependence on the backgate and interlayer bias. We experimentally measure the Coulomb drag between the two graphene layers for the first time, by flowing current in one layer and measuring the voltage drop in the opposite layer. The drag resistivity gauges the momentum transfer between the two layers, which, in turn, probes the interlayer electron-electron scattering rate. The temperature dependence of the Coulomb drag above temperatures of 50 K reveals that the ground state in each layer is a Fermi liquid. Below 50 K we observe mesoscopic fluctuations of the drag resistivity, as a result of the interplay between coherent intralayer transport and interlayer interaction. In addition, we develop a technique to directly measure the Fermi energy in an electron system as a function of carrier density using double layer structure. We demonstrate this method in the double layer graphene structure and probe the Fermi energy in graphene both at zero and in high magnetic fields. Last, we realize dual-gated bilayer graphene devices, where we investigate quantum Hall effects at zero energy as a function of transverse electric field and perpendicular magnetic field. Here we observe a development of v = 0 quantum Hall state at large electric fields and in high magnetic fields, which is explained by broken spin and valley spin symmetry in the zero energy Landau levels. / text

Since metal-oxide-semiconductor (MOS) devices have been adopted into integrated circuits, the endless demands for higher performance and lower power consumption have been a primary challenge and a technology-driver in the semiconductor electronics. The invention of complementary MOS (CMOS) technology in the 1980s, and the introduction of voltage and physical dimension scaling in the 1990s would be good examples to keep up with the everlasting demands. In the 2000s, technology continuously evolves and seeks for more power efficiency ways such as high-k dielectrics, metal gate electrodes, strained substrates, and high mobility channel materials. As a gate dielectric, silicon dioxide (SiO₂), most widely used in CMOS integrated circuits, has many prominent advantages, including a high quality interface (e.g. Dit ~ low 1010 cm-2eV-1), a good thermal stability in contact with silicon (Si), a large energy bandgap and the large energy band offsets in reference to Si, and a high quality dielectric itself. As the thickness of SiO₂ keeps shrinking, however, SiO₂ is facing its physical limitations from the viewpoint of gate dielectric leakage currents and reliability requirements. High-k dielectric materials have attracted extensive attention in the last decade due to their great potential for maintaining further down-scaling in equivalent oxide thickness (EOT) and a low dielectric leakage current. HfO₂ has been considered as one of the most promising candidates because of a high dielectric constant (k ~ 20-25), a large energy band gap (~ 6 eV) and the large band offsets (> 1.5 eV), and a good thermal stability. To enhance carrier mobility, strained substrates and high mobility channel materials have attracted a great deal of attention, thus III-V compound semiconductor substrates have emerged as one of possible candidates, in spite of several technical barriers, being believed as barriers so far. The absence of high quality and thermodynamically stable native oxide, like SiO₂ on Si, has been one such hurdle to implement MOS systems on III-V substrates. However, recently, there have been a number of remarkable improvements on MOS applications on them, inspiring more vigorous research activities. In this research, HfO2-based MOS capacitors and metal-oxidesemiconductor field effect transistors (MOSFETs) with a thin germanium (Ge) interfacial passivation layer (IPL) on III-V compound substrates were investigated. It was found that a thin Ge IPL could effectively passivate the surface of III-V substrate, consequently providing a high quality interface and an excellent gate oxide scalability. N-channel MOSFETs on GaAs, InGaAs, and InP substrates were successfully demonstrated and a minimum EOT of ~ 9 Å from MOS capacitors was achieved. This research has begun with GaAs substrate, and then expanded to InGaAs, InP, InAs, and InSb substrates, which eventually helped to understand the role of a Ge IPL and to guide future research direction. Overall, MOS devices on III-V substrates with an HfO₂ gate dielectric and a Ge IPL have demonstrated feasibility and potential for further investigations. / text

A new quantum transport simulator -- Schrödinger Equation Monte Carlo in Three Dimensions (SEMC-3D) -- has been developed for simulating the carrier transport in nanoscale 3D MOSFET geometries. SEMC-3D self-consistently solves: (1) the 1D quantum transport equations derived from the SEMC method with open boundary conditions and rigorous treatment of various scattering processes including phonon and surface roughness scattering, (2) the 2D Schrödinger equations of the device cross sections with close boundary conditions to obtain the spatially varying subband structure along the conduction channel, and (3) the 3D Poisson equation of the whole device. Therefore, SEMC-3D can provide a physically accurate and electrostatically selfconsistent approach to the quantum transport in the subbands of 3D nanoscale MOSFETs. SEMC-3D has been used to simulate Si nanowire (NW) nMOSFETs to both demonstrate the capabilities of SEMC-3D, itself, and to provide new insight into transport phenomena in nanoscale MOSFETs, particularly with regards to interplay among scattering, quantum confinement and transport, and strain. / text