Cette thèse présents plusieurs techniques de caractérisation appliqués à diverses matières organiques dans le but de démêler leur structure-propriétés relation once encapsulés comme matériaux actifs dans les dispositifs de OFET. Un soin particulier est alors dédié aux méthodes de caractérisation structurale (2D-GIXRD, XRR et XRD) à la fois de source de laboratoire classique et de rayonnement de synchrotron. Divers matériaux polymères organiques, compris de p- et n-type de petites molécules et polymères en solution ou déposés par sublimation sous vide sont étudiées. En particulier, l'étude de OFET basée sur deux fonctionnalisés isomères péryléne ne différant que par la forme des alkyle côté chaînes démontre comment la nature ramifié et asymétrique des chaînes peut conduire à une amélioration de la performance électrique avec un simple traitement thermique post-dépôt, tandis que la fabrication de dispositifs ambipolaire polymères au moyen de la technique Langmuir-Schaefer souligne l'importance de la méthode de dépôt sur l'agencement de la matière sur la surface du substrat. Une approche inhabituelle, nommé enquête structurelle in_situ et en temps réel, est aussi présenté pour évaluer les modifications structurelles dans les films minces organiques subissent un processus particulier. Plus précisément, la réponse de la structure des films minces de pentacene à l’application de VSG et VSD au OFET et des films minces dérivés de TTF à la variation d’humidité ont été étudiés. / This thesis presents multiple characterization techniques applied to various organic materials with the ultimate goal of unraveling their structure-properties relationship once encapsulated as active materials in OFETs devices. Particular care is then dedicated to the structural characterization methods (2D-GIXRD, XRR and XRD) both from classical laboratory source and from synchrotron radiation. Various organic materials, comprising p- and n-type small molecules and polymers deposited from solution or by vacuum sublimation are investigated. In particular, the study on OFETs based two functionalized perylene isomers differing only in the shape of the alkyl side-chians demonstrates how the branched and asymmetric nature of the chains can lead to an improvement of the electrical performance with a simple post-deposition thermal treatment, while the fabrication of ambipolar polymeric devices by means of Langmir-Schaefer technique highligts the importance of the deposition method on the arrangement of the material on the substrate surface. A more unusual approach, named in-situ and real-time structural investigation, is also presented to evaluate structural modifications in organic thin films undergoing a particular process. Specifically, the structural responce of pentacene thin films to the application of VSG and VSD to the OFET and of TTF derivatives thin films to the variation of humidty were investigated.

Sickle Cell Disease (SCD) is a hereditary monogenic disorder that affects millions of people worldwide and is associated with symptoms such as stroke, lethargy, chronic anemia, and increased mortality. SCD can be quickly detected and diagnosed using a simple blood test as an infant, but as of now, there is currently limited treatment to cure an individual of sickle cell disease. Recently, there have been several promising developments in CRISPR-Cas-associated gene-editing therapeutics; however, there have been limitations in gene-editing efficiency monitoring, which if improved, could be beneficial to advancing CRISPR-based therapy, especially in SCD. The CRISPR-Chip, a three-terminal graphene-based field effect transistor (gFET), was used to detect genomic samples of individuals with SCD, with and without amplification. With the dRNP-HTY3’ complex, CRISPR-Chip was able to specifically detect its target sequence with and without pre-amplification. With the dRNP-MUT3’ complex, CRISPR-Chip was only able to specifically detect one of its two target sequences. Facile detection, analysis, and editing of sickle cell disease using CRISPR-based editing and monitoring would be beneficial for simple diagnostic and gene-editing therapeutic treatment of other single nucleotide polymorphisms as well, such as beta-thalassemia and cystic fibrosis.

The demand for higher frequency applications is largely driven by bandwidth. The evolution of circuits in the microwave and millimeter frequency ranges always demands higher performance and lower cost as the technology and specification requirements evolve. Thus the development of new processes addressing higher frequencies and bandwidth requirements is essential to the growth of any semiconductor company participating in these markets. There exist processes which can perform in the higher frequency design space from a technical perspective. However, a cost effective solution must complement the technical merits for deployment. Thus a new 0.15 um optical lithography pHEMT process was developed at TriQuint Semiconductor to address this market segment. A 40 GHz power amplifier has been designed to quantify and showcase the capabilities of this new process by leveraging the existing processing knowledge and the implementation of high frequency scalable models. The three stage power amplifier was designed using the TOM4 scalable depletion mode FET model. The TriQuint TQP15 Design Kit also implements microstrip transmission line models that can be used for evaluating the interconnect lines and matching networks. The process also features substrate vias and the thin film resistor and MIM capacitor models which utilize the capabilities of the BCB process flow. During the design stage we extensively used Agilent ADS program for circuit and EM simulation in order to optimize the final design. Special attention was paid to proper sizing of devices, developing matching circuits, optimizing transmission lines and power combining. The final design exhibits good performance in the 40 GHz range using the new TQP15 process. The measured results show a gain of greater than 13 dB under 3 volt drain voltage and a linear output power of greater than 28 dBm at 40 GHz. The 40 GHz power amplifier demonstrates that the new process has successfully leveraged an existing manufacturing infrastructure and has achieved repeatability, high volume manufacturing, and low cost in the millimeter frequency range.

Two-dimensional numerical simulation was used to study the scaling properties of SOI p-MOSFETs. Based on the design criteria for the threshold voltage and DIBL, a set of design curves for different designs was developed. Data for subthreshold slope, SCE and threshold voltage sensitivity to silicon film thickness are also given. Results show that short-channel effects can be controlled by increasing the doping level or by thinning the silicon film thickness. The first approach is more effective for p+ gate design with high body doping, while the second approach is much more effective for n+ gate design with low body doping. Then+ gate design is more suited for the design of fully depleted (FD) devices since we need to keep the doping low to minimize the threshold adjustment implant dose and to use thin silicon films to control the SCE. The design of both p-MOSFET and Si 1-xGex p-MOSFET requires the implantation for the threshold voltage adjustment. The p+ gate design is more suited for the partially depleted (PD) or near-fully depleted device design since we need to use high doping for the threshold voltage adjustment and this results in large threshold voltage sensitivity to silicon film thickness for FD devices. The design of Si SOI p-MOSFET is done by properly adjusting the body doping. For the Si1-xGex SOI p-MOSFET large reduction in VTH requires large body doping. This increases the parasitic capacitances and slows down the device.

With increasing demand for complex and faster circuits, CMOS technologies are progressing towards the deep-submicron level. Process complexity increases dramatically, and costly techniques are to be developed to create dense field isolation and shallow junctions. Silicon-On-Insulator (SOI) may solve some of these problems. On the other hand, strained Si 1_xGex layers have been successfully grown on Si substrates and demonstrated much higher hole mobility than bulk Si. This can be used to build high-mobility p-MOSFET with a buried Si 1_xGex channel. A high mobility p-MOSFET would improve both the circuit speed and the level of integration. The purpose of the present study was to model and simulate the effective mobility (μeff) of SOI Si 1-xGex p-MOSFET, and to investigate the suitability of local mobility models provided by simulator MEDICI for studying SOI Si 1_xGex p-MOSFET. The simulation is performed by using the two-dimensional device simulation program (MEDICI). The design parameters, such as Si-cap thickness, Ge profile and back-gate bias, were also investigated. A long channel (6μ) and a short channel (0.25μ) SOI and bulk Si 1_xGex p MOSFET were used for the study. Simulation reveals good effective mobility μeff match with experimental results if Si Ge channel of p-MOSFET can simply be treated like a bulk silicon with mobility 250cm2 /Vs. Mobility models provided by MEDICI are two types: a) mobility model (SRFMOB2) that is dependent on transverse electric field only at Si/ Si02 interface, which means that the effective mobility is a function of grid spacing at Si/ Si02 interface, and b) mobility models (PRPMOB, LSMMOB and HPMOB) that are dependent on transverse electric field anywhere in the device. PRPMOB and LSMMOB produce very good μef f and are insensitive to the grid spacing. HP MOB gives slight over estimation of effective mobility μef f. Silicon cap thickness can significantly influence the effective mobility μef f. In general, the thin silicon cap have better effective mobility μef f, but it is limited by manufacturing process. Graded Si 1_:z:Ge:z: channel presents nearly 100% improvement of effective mobility μeff for p-MOSFET over its bulk counterpart. This improvement is sustained up to gate voltage of 2.5 V. Simulation also indicates that large improvement of effective mobility μef f requires higher Ge concentration at the top of SiGe channel with steep grading. The influence of back-gate bias on μeff is small, hence, SOI SiGe MOSFET is well suited to building CMOS circuits.

This thesis deals with the synthesis of electroactiveorganic compounds. The synthesis of ethylenedioxy-benzodioxinstri-dioxin and tetra-dioxin are described. These molecules wereprepared with the aim of creating donor molecules for cationicradical salts. The symmetric analogs of tri-dioxin,methylenedioxy-derivative and ethylenedioxy-naphthalene werealso synthesized. Three different cation radical salts with 2:1stoichiometries were obtained from tri-dioxin, whiletetra-dioxin merely provided polycrystalline materials.Tri-dioxin and tetra-dioxin were also successful as operationalmatrixes in PALDI-TOF. Tetrathiafulvalenes with the2-dialkyl-amino-1,3-dithiolium-4-thiolate mesoion asbuilding-block was also synthesized. A series of doublyalkylthiol-substituted TTFs were prepared with the aim offorming self-assembly monolayers on gold surfaces in theapplication of organic thin film field-effect transistors.Film-formation for two TTFs were studied and they providedrelatively dense packed monolayers with a discrete distance ofthe TTF moiety from the gold surface. The mesoionic compound was also for the first time used inanumpolungreaction. The electrophile obtained in situ bytreatment of mesoion with sulfuryl chloride was reacted with avariety of electron-rich aromatic compounds. From the receivedproducts three new arylthio-substituted TTFs weresynthesized. <b>Keywords:</b>Synthesis, Benzodioxin, Tetrathiafulvalene,Mesoion, Organic Conductor, Cation Radical Salt, CyclicVoltammetry, Electrocrystallization, Self-Assembly Monolayer,SAM, Organic Field-Effect Transistor, OFET

In the past decade, tremendous progress has been made in organic field effecttransistors. Fused oligothiophenes and anthracene molecules are fascinatingmacromolecules having unique optoelectronic properties. These compounds are successfully employed as active components in optoelectronic devices including field effect transistors. Our goal is to design and synthesize conjugated molecular materials, which are highly functionalized through structural modifications in order to enhance their electronic, photonic, and morphological properties. The main desire is to synthesize novel organic fused-arenes having efficient charge carrier mobilities, as well as to optimize optical properties for organic field effect transistors (OFETs). Novel series of fused arene molecules of 9,10-di(thiophen-3-yl)anthracene (1), trans-2,5-(dianthracene-9- vinyl)thiophene (2), trans-5,5’-(dianthracene-9-yl)vinyl)- 2,2’-bithiophene (3), 5,5’-di(2 thiophene)-2,2’-bithiophene (4) , 9,10-(divinyl)anthracene core with 1- phenylcarboxypyrene (6) and polymers of poly(anthracene-co-bithiophene) (5) and poly(anthracene) (7) have been synthesized as promising materials for organic field effect transistors (OFETs). These compounds were confirmed and characterized by 1H-NMR, FT-IR, and elemental analysis. Their optical, thermal, and electronic properties were investigated using UV-Vis and photoluminescence spectroscopy, and thermogravimetric analysis respectively. Future studies will focus on evaluating OFETs performance of these material.

The objective of this dissertation is to classify the opportunities, advantages, and limits of novel interconnects for post-CMOS logic that can augment or eventually replace the CMOS logic. Post-CMOS devices are envisaged on the idea of using state variables other than the electron charge to store and manipulate information. In the first component of the thesis, a comprehensive analysis of the performance and the energy dissipation of novel logic based on various state variables is conducted, and it is demonstrated that the interconnects will continue to be a major challenge even for post-CMOS logic. The second component of the thesis is focused on the analysis of the interconnection aspects of spin-based logic. This research goal is accomplished through the development of physically-based models of spin-transport parameters for various metallic, semiconducting, and graphene nanoribbon interconnects by incorporating the impact of size effects for narrow cross-sectional dimensions of all-spin logic devices. Due to the generic nature of the models, they can be used in the analysis of spin-based devices to study their functionality and performance more accurately. The compact nature of the models allows them to be easily embedded into the developing CAD tools for spintronic logic. These models then provide the foundation for (i) analyzing the spin injection and transport efficiency in an all-spin logic circuit with various interconnect materials, and (ii) estimating the repeater-insertion requirements in all-spin logic, and (iii) estimating the maximum circuit size for all-spin logic. The research is crucial in pinpointing the implications of the physical limits of novel interconnects at the material, device, circuit, and architecture levels.

A measurement system is to be presented, which is used to obtain the I-V characteristics of a solar cell and to track its temperature during irra-diation before mounting it into a complete array/module. This project presents both the design and implementation of an Electronic load for testing the solar cell under field conditions of 10000 W/m^2, which is able to provide current versus voltage and power versus voltage charac-teristics of a solar cell using a software based model developed in Lab-VIEW. An efficient water cooling method which includes a heat pipe array system is also suggested. This thesis presents the maximum power tracking of a solar cell and the corresponding voltage and current values. In addition, the design of the clamp system provides an easy means of replacing the solar cell during testing.Keywords: Solar cell, Metal Oxide Semiconductor Field Effect Transistor (MOSFET), I-V characteristics, cooling system, solar cell clamp system, LabVIEW, Graphical User Interface (GUI).

Topic of the thesis is the production of unipolar digital circuits by means of mass-printing technologies. For this purpose accumulation-mode and depletion-mode field-effect transistors have been used. To realize depletion-mode field-effect transistors charges are injected and stored in the gate-dielectric. Consequently, the charge transport on the semiconductor-dielectric interface is influenced and the threshold voltage can be controlled. To inject charges into the dielectric different technologies have been used and will be discussed in terms of their process parameters. Finally, fully-printed digital circuits with enhanced performance are introduced. / Gegenstand der vorliegenden Arbeit ist die drucktechnische Herstellung von unipolaren digitalen Schaltungen durch eine Kombination von organischen Feldeekttransistoren vom Anreicherungs- und Verarmungstyp. Zur Realisierung von Transistoren vom Verarmungstyp werden Überschussladung in den Gate- Isolator eingebracht und gespeichert, wodurch der Ladungstransport im Transistorkanal insbesondere die Schwellspannung beeinflusst wird. Es werden verschiedene Aufladungstechnologien und deren Prozessparameter diskutiert. Abschließend werden vollständig mit Massendruckverfahren prozessierte, digitale Schaltungen mit verbesserter Signalübertragungscharakteristik vorgestellt.