This work relates to problematics of FAT32 file system metadata recovery from damaged flash drive or memory card and design of program capable of such recovery and comparision with existing solution for this task.

A significant portion of cancer patients receive radiotherapy as part of their curative or palliative treatment plan. Radiotherapy is however greatly limited by radiation induced toxicities in healthy tissue surrounding the tumour, which can lead to long-term or acute complications for a patient. In response to this issue, recent studies have considered a new technique called FLASH radiotherapy, where ultra-high dose rates have been shown to effectively reduce toxicity in normal cells whilst maintaining a tumour response equivalent to conventional dose rates. However, the exact mechanism for this effect is not yet well understood. This project seeks to investigate if certain dose delivery patterns exist where there is an increase or reduction of concentration of the toxic radical hydroxyl, which is known to play a key role in the damage of DNA in the cell, for unchanged total dose. This was done by simulating the chemical reactions which take place when water is irradiated with ionizing radiation using a simple model system consisting of water with free oxygen dissolved into it, called RadChemModel. Using basic reaction laws from chemistry, the concentration of each chemical species involved was solved for from a system of linear and non-linear ordinary differential equations. The concentration of hydroxyl was calculated as a function of time for a range of irradiation beam patterns. This model supports that there could be a difference in toxicity between FLASH and conventional beam parameters. Furthermore, a shift in the behaviour of hydroxyl suggesting reduced toxicity was observed at FLASH dose rates with very high beam pulse frequencies. However, the results obtained do not provide enough information to confirm that the concentration of hydroxyl is reduced with FLASH beam parameters. / En stor andel cancerpatienter får strålterapi som läkande eller palliativ behandling. Strålterapi kan ge upphov till allvarliga skador i den friska vävnaden i närheten av tumörområdet. För att förebygga omedelbara så väl som långsiktiga skadliga effekter av strålterapi, har nyligen pulicerade studier undersökt en ny teknik som kallas för FLASH strålterapi. Man har påvisat att ultra-höga doshastigheter kan minska strålskadorna i friska celler samtidigt som tumörkontrollen bevaras. Emellertid finns ännu ingen tillräcklig förklaring för den exakta mekanismen bakom fenomenet. Målet med detta projekt är att undersöka om en ökning eller minskning av koncentrationen hos radikalen hydroxyl, som är känd för att spela en kritisk roll i framkallandet av DNA skador, kunde upptäckas för särskilda doseringsmönster med en oförändrad total dos. Detta studerades med en enkel matematisk modell (RadChemModel) för vatten med upplöst syre. Med denna modell simulerades de kemiska reaktioner som äger rum när vatten bestrålas med joniserande strålning. Från fundamentala kemiska reaktionslagar, kunde koncentrationen av hydroxyl som funktion av tid fås genom att lösa ett system av linjära och icke-linjära ordinära differentialekvationer. Den här modellen visar att det kan finnas en skillnad i strålinducerade skador mellan FLASH och vanlig strålterapi. Resultaten från väldigt höga pulsfrekvenser med FLASH antydde också att mindre hydroxyl producerades och därmed att strålskador kan vara beroende av både doshastighet och pulsfrekvens. Däremot är resultaten inte tillräckliga för bekräfta att koncentrationen av hydroxyl är reducerad för FLASH.

The main aim of this contribution is to introduce the potential that modern information technologies open to authors converting a teaching material from a printed to an electronic version. The authors come out of their own experience and propose options that are suitable especially for creation of study materials in mathematics education. Among others the contribution presents the use of flash animations, java scripts and Computer Algebra Systems.

The ferroelectricity in fluorite structure based hafnium oxide (HfO2) material expanded the horizon for realizing nonvolatile ferroelectric memory concepts. Due to the excellent HfO2 ferroelectric film properties, CMOS compatibility, and scalability; the material is foreseen as a replacement of the lead based ferroelectric materials with a big game changing potential for the emerging ferroelectric memories. In this thesis, the development of novel memory concepts based on the ferroelectric or antiferroelectric HfO2 material is reported. The ferroelectric field effect transistor (FeFET) memory concept offers a low power, high-speed, nonvolatile, and one cell memory solution ideal for embedded memory realization. As an emerging concept based on a novel ferroelectric material, the FeFET is challenged with key performance aspects intrinsic to the underlying physics of the device. A central part of this thesis is the development of FeFET through material and gate stack engineering, in turn leading to innovative novel device concepts. The conceptual innovation, process development, and electrical assessment are explored for an ferroelectric or antiferroelectric HfO2 based nonvolatile memories with focus on the underlying device physics. The impact of the ferroelectric material on the FeFET physics is explored via the screening of different HfO2 based ferroelectric materials, thicknesses, and the film doping concentration. The impact of material interfaces and substrate doping conditions are explored on the stack engineering level to achieve a low power and reliable FeFET. The material optimization leads to the concept of ferroelectric lamination, i.e. a dielectric interlayer between multi ferroelectric ones, to achieve a novel multilevel data storage in FeFET at reduced device variability. Toward a low power FeFET, the stack structure tuning and dual ferroelectric layer integration are explored through an MFM and MFIS integration in a single novel FeFET stack. The charge trapping effect during the FeFET switching captures the dynamics of the hysteresis polarization switching inside the stack with direct impact on the interfacial layer field. Even though manifesting as a clear drawback in FeFET operation, it can be utilized in Flash, leading to a novel hybrid low power and high-speed antiferroelectric based charge trap concept. Furthermore, the FeFET reliability is studied covering the role of operating temperature and the ferroelectric wakeup phenomenon observed in the FeFET. The temperature modulated operation, role of the high-temperature pyroelectric effect, and the temperature induced endurance and retention reliability are studied.:Table of Contents Abstract Table of Contents 1. Introduction 2. Fundamentals 2.1. Basics of Ferroelectricity 2.2. The FeFET Operation Principle and Gate Stack Theory 2.3. Structure and Outline of the PhD Thesis 3. The Emerging Memory Optimization Cycle: From Conceptual Design to Fabrication 3.1. The FeFET Conceptual Design and Layout Implementation 3.2. Gate First FeFET Fabrication: Material and Gate Stack Optimization 3.3. Novel Gate First based Memory Concepts: Device Integration and Stack Optimization 3.4. Device Characterization: Electrical Testing Schemes 4. The Emerging FeFET Memory: Material and Gate Stack Optimization 4.1. Material Aspect of FeFET Optimization: Role of the FE Material Properties 4.2. The Stack Aspect of FeFET Optimization: Role of the Interface Layer Properties 4.3. The Stack Aspect of FeFET Optimization: Role of the Substrate Implant Doping 4.4. Summary 5. A Novel Multilevel Cell FeFET Memory: Laminated HSO and HZO Ferroelectrics 5.1. The Laminate MFM and Stack Characteristics 5.2. The Laminate based FeFET Memory Switching 5.3. The Laminate FeFET Multilevel Coding Operation (1 bit, 2 bit, 3 bit/cell) 5.4. The Maximum Laminate FeFET MW Dependence on FE Stack Thickness 5.5. The Role of Wakeup and Charge Trapping 5.6. The Laminate MLC FeFET Area Dependence 5.7. The Laminate MLC Retention and Endurance 5.8. Impact of Pass Voltage Disturb on Laminate based NAND Array Operation 5.9. The Laminate FeFET based Synaptic Device 5.10. Summary 6. A Novel Ferroelectric MFMFIS FeFET: Toward Low Power and High-Speed NVM 6.1. The MFMFIS FeFET P-E and FET Characteristics 6.2. The MFMFIS based Memory Characteristics 6.3. The Impact of MFMFIS Stack Structure Tuning 6.4. The Maximum MFMFIS FeFET Memory Window 6.5. The Role of Device Scalability and Variability 6.6. The MFMFIS Area Tuning for Low Power Operation 6.7. The MFMFIS based FeFET Reliability 6.8. The Synaptic MFMFIS based FeFET 6.9. Summary 7. A Novel Hybrid Low Power and High-Speed Antiferroelectric Boosted Charge Trap Memory 7.1. The Hybrid Charge Trap Memory Switching Characteristics 7.2. The Role of Polarization Switching on Optimal Write Conditions 7.3. The Impact of FE/AFE Properties on the Charge Trap Maximum Memory Window 7.4. The Hybrid AFE Charge Trap Multi-level Coding and Array Operation 7.5. The Global Variability and Area Dependence of the Charge Trap Memory Window 7.6. The AFE Charge Trap Reliability 7.7. The Hybrid AFE Charge Trap based Synapse 7.8. Summary 8. The Emerging FeFET Reliability: Role of Operating Temperature and Wakeup Effect 8.1. The FeFET Temperature Reliability: A Temperature Modulated Operation 8.2. The FeFET Temperature Reliability: Role of the Pyroelectric Effect 8.3. The FeFET Temperature Reliability: Endurance and Retention 8.4. The Impact of Ferroelectric Wakeup on the FeFET Memory Reliability 8.5. Summary 9. Closure: What this Thesis has Solved? 9.1. How material selection/development influence the FeFET? 9.2. Why the FeFET Still Operates at High Write Conditions? 9.3. Why the FeFET Endurance is still a Challenge? 9.4. Can the FeFET become Multi-bit Storage Memory? 9.5. How the Scalability Determine FeFET Chances? 10. Summary 11. Bibliography List of symbols and abbreviations List of Publications Acknowledgment Erklärung

Aujourd'hui, les progrès dans le développement d'appareils mobiles et des capteurs embarqués ont permis un essor sans précédent de services à l'utilisateur. Dans le même temps, la plupart des appareils mobiles génèrent, enregistrent et de communiquent une grande quantité de données personnelles de manière continue. La gestion sécurisée des données personnelles dans les appareils mobiles reste un défi aujourd’hui, que ce soit vis-à-vis des contraintes inhérentes à ces appareils, ou par rapport à l’accès et au partage sûrs et sécurisés de ces informations. Cette thèse adresse ces défis et se focalise sur les traces de localisation. En particulier, s’appuyant sur un serveur de données relationnel embarqué dans des appareils mobiles sécurisés, cette thèse offre une extension de ce serveur à la gestion des données spatio-temporelles (types et operateurs). Et surtout, elle propose une méthode d'indexation spatio-temporelle (TRIFL) efficace et adaptée au modèle de stockage en mémoire flash. Par ailleurs, afin de protéger les traces de localisation personnelles de l'utilisateur, une architecture distribuée et un protocole de collecte participative préservant les données de localisation ont été proposés dans PAMPAS. Cette architecture se base sur des dispositifs hautement sécurisés pour le calcul distribué des agrégats spatio-temporels sur les données privées collectées. / Nowadays, the advances in the development of mobile devices, as well as embedded sensors have permitted an unprecedented number of services to the user. At the same time, most mobile devices generate, store and communicate a large amount of personal information continuously. While managing personal information on the mobile devices is still a big challenge, sharing and accessing these information in a safe and secure way is always an open and hot topic. Personal mobile devices may have various form factors such as mobile phones, smart devices, stick computers, secure tokens or etc. It could be used to record, sense, store data of user's context or environment surrounding him. The most common contextual information is user's location. Personal data generated and stored on these devices is valuable for many applications or services to user, but it is sensitive and needs to be protected in order to ensure the individual privacy. In particular, most mobile applications have access to accurate and real-time location information, raising serious privacy concerns for their users.In this dissertation, we dedicate the two parts to manage the location traces, i.e. the spatio-temporal data on mobile devices. In particular, we offer an extension of spatio-temporal data types and operators for embedded environments. These data types reconcile the features of spatio-temporal data with the embedded requirements by offering an optimal data presentation called Spatio-temporal object (STOB) dedicated for embedded devices. More importantly, in order to optimize the query processing, we also propose an efficient indexing technique for spatio-temporal data called TRIFL designed for flash storage. TRIFL stands for TRajectory Index for Flash memory. It exploits unique properties of trajectory insertion, and optimizes the data structure for the behavior of flash and the buffer cache. These ideas allow TRIFL to archive much better performance in both Flash and magnetic storage compared to its competitors.Additionally, we also investigate the protect user's sensitive information in the remaining part of this thesis by offering a privacy-aware protocol for participatory sensing applications called PAMPAS. PAMPAS relies on secure hardware solutions and proposes a user-centric privacy-aware protocol that fully protects personal data while taking advantage of distributed computing. For this to be done, we also propose a partitioning algorithm an aggregate algorithm in PAMPAS. This combination drastically reduces the overall costs making it possible to run the protocol in near real-time at a large scale of participants, without any personal information leakage.

In dieser Arbeit werden Speichertransistoren mit Oxid-Nitrid-Oxid-Speicherschicht und lokaler Ladungsspeicherung untersucht, die zur nichtflüchtigen Speicherung von Informationen genutzt werden. Charakteristisch für diese Transistoren ist, dass an beiden Enden des Transistorkanals innerhalb der Isolationsschicht Informationen in Form von Ladungspaketen unabhängig und getrennt voneinander gespeichert werden. Für das Auslesen, Programmieren und Löschen der Speichertransistoren werden die physikalischen Hintergründe diskutiert und grundlegende Algorithmen zur Implementierung dieser Operationen auf einer typischen Speicherfeldarchitektur aufgezeigt. Für Standard-MOS-Transistoren wird ein Kurzkanal-Schwellspannungsmodell abgeleitet und analytisch gelöst. Anhand dieser Modellgleichung werden die bekannten Kurzkanaleffekte betrachtet. Weiterhin wird ein Modell zur Berechnung des Drainstroms von Kurzkanaltransistoren im Subthreshold-Arbeitsbereich abgeleitet und gezeigt, dass sich die Drain-Source-Leckströme bei Kurzkanaltransistoren vergrößern. Die Erweiterung des Schwellspannungsmodells für Standard-MOS-Transistoren auf den Fall der lokalen Ladungsspeicherung innerhalb der Isolationsschicht erlaubt die Ableitung eines Schwellspannungsmodells für Oxid-Nitrid-Oxid-Transistoren mit lokaler Ladungsspeicherung. Dieses Modell gestattet die qualitative und quantitative Diskussion der Erhöhung der Schwellspannung durch die lokale Injektion von Ladungsträgern beim Programmiervorgang. Weiterhin ist es mit diesem Modell möglich, die Trennung der an beiden Kanalenden des Transistors gespeicherten Informationen beim Auslesevorgang qualitativ zu erklären und diese Bittrennung in Abhängigkeit von der Drainspannung zu berechnen. Für Langkanalspeichertransistoren wird eine analytische Näherungslösung des Schwellspannungsmodells angegeben, während das Kurzkanalverhalten durch die numerische Lösung der Modellgleichung bestimmt werden kann. Für Langkanalspeichertransistoren wird ein Subthreshold-Modell zur Berechnung des Drainstroms abgeleitet. Dieses Modell zeigt, dass sich die Leckströme von programmierten Speichertransistoren im Vergleich zu Standard-MOS-Transistoren gleicher Schwellspannung vergrößern. Die Ursache dieses Effekts, die Verringerung der Subthreshold-Steigung von Transistoren im programmierten Zustand, wird analysiert. Für einige praktische Beispiele wird die Anwendung der hergeleiteten Modellgleichungen beim Entwurf von Flash-Speichern demonstriert. / In this work, memory transistors with an oxide-nitride-oxide trapping-layer and local charge storage, which are used for non-volatile information storage, are examined. Characteristic for these transistors is an independent and separated storage of information by charge packages, located at both sides of the transistor channel, in the insulation layer. The physical backgrounds for reading, programming and erasing the memory transistors are discussed, and basic algorithms are shown for implementing these operations on a typical memory array architecture. For standard MOS-transistors a short channel threshold model is derived and solved analytically. By using these model equations, the known short channel effects are considered. Further, a model for calculating the drain current of short channel transistors in the subthreshold operation region is derived. This model is used to show the increase of drain-source leakage currents in short channel transistors. By extending the standard MOS-transistor threshold voltage model for local charge storage in the insulation layers, the derivation of a threshold voltage model for oxide-nitride-oxide transistors with local charge storage is enabled. This model permits the quantitative and qualitative discussion of the increase in threshold voltage caused by local injection of charges during programming. Furthermore, with this model, the separation of the information, which are stored at both sides of the transistor channel, in the read-out operation is explained qualitatively, and the bit separation is calculated dependent on the drain voltage. For long channel memory transistors an analytical approximation of the threshold voltage model is given, whereas the short channel behaviour can be determined by solving the model equation numerically. For long channel memory transistors, a subthreshold model for calculating the drain current is derived. This model shows the increase in leakage current of programmed memory transistors in comparision to standard MOS-transistors. The root cause of this effect, the reduced subthreshold swing of transistors in the programmed state, is analysed. The application of the derived model equations for the development of flash memories is demonstrated with some practical examples.

[ES] La luz solar puede producir daños en el ADN por absorción directa de luz UVB, o por fotosensibilización tras la absorción de luz UVA por parte de fármacos, que pueden actuar como fotosensibilizadores (PS). La benzofenona (BP), presente en la estructura química de una amplia variedad de fármacos, tiene el potencial de fotosensibilizar daño al ADN, especialmente hacia la base de timina (Thy). Este daño puede dar lugar a dímeros de pirimidina de tipo ciclobutano (CPD) y a fotoproductos (6-4) pirimidina-pirimidona ((6-4)PPs), los cuales pueden causar mutaciones graves, melanomas o incluso la muerte celular. En algunos organismos, los (6-4)PPs pueden repararse de manera eficiente por las fotoliasas, en lo que se podría entender como una reacción Paternò-Büchi (PB) inversa a través de un intermedio de oxetano altamente inestable. Con el fin de profundizar en la fotorreactividad de los derivados BP-Thy y en la ruptura fotoinducida de oxetanos, se sintetizaron por primera vez una variedad de diadas en las que Thy y BP están covalentemente unidas por un espaciador lineal de diferente longitud y naturaleza. La fotorreactividad de los diferentes derivados se investigó por fotólisis de destello láser (LFP) y espectroscopía de absorción transitoria a escala de femtosegundo; además, se aislaron y caracterizaron los principales fotoproductos (PPs) derivados de la irradiación en estado estacionario. Los resultados mostraron un alto grado de quimioselectividad en la longitud y conformación del espaciador. En cuanto a la reactividad fotoquímica, se formaron PPs derivados de la PB y de la abstracción formal de hidrógeno; así, las diadas con el espaciador más largo dieron lugar a la formación de oxetanos y de PPs de abstracción de hidrógeno. Por el contrario, las diadas con espaciadores más cortos formaron un fotoproducto de abstracción formal de hidrógeno y/o polimerización. Por tanto, la fotorreactividad se vio influida por la longitud del espaciador, correlacionándose bien con los tiempos de 3BP*, observándose los tiempos más cortos para las diadas de espaciadores largos. En relación con la fotoapertura de oxetanos, la irradiación de los diferentes regio- y estereoisoméros condujo a la formación de la típica banda de absorción triplete-triplete de BP; por tanto, dicho proceso opera de forma adiabática. La fotólisis del oxetano que resulta de la irradiación de la diada con el espaciador más largo mostró una banda de absorción transitoria sobre 400 nm, atribuida a la formación del exciplejo triplete entre BP y Thy covalentemente unidos. Por otro lado, se investigó la reacción PB y la cicloreversión de oxetanos que surgen de la interacción entre Thy o derivados de uracilo (Ura) y BP. Así, se sintetizó una amplia gama de oxetanos Thy-BP y Ura-BP con diferentes sustituyentes en las posiciones 1 y 5 de la nucleobase, incluyéndose los regioisómeros cabeza-cabeza (HH) y cabeza-cola (HT). Los estudios espectroscópicos (absorción transitoria ultrarrápida y LFP), junto con el análisis teórico, coinciden en que la cicloreversión fotoinducida para los isómeros HH y HT implica la formación de un exciplejo en el estado excitado triplete antes de la ruptura. Generalmente, se observó que la reacción fue completamente adiabática para los regioisómeros HH. En el caso del oxetano HH que surge de la interacción entre 1,3-dimetiltimina (DMT) y BP, se observó la formación de una banda ~400 nm, que se atribuyó al exciplejo triplete 3[DMT···BP]*. Su formación fue altamente regioselectiva, siendo más rápida y eficiente para el isómero HH que para HT. Estos resultados fueron confirmados por análisis computacional. En general, se observó adiabaticidad en el proceso de fotorreversión para todos los oxetanos investigados, con un alto grado de regioselectividad y con la participación de exciplejos triplete. / [CA] La llum solar pot produir danys a l'ADN per absorció directa de llum UVB, o per fotosensibilització després de l'absorció de llum UVA per part de fàrmacs, que poden actuar com fotosensibilitzadors (PS). La benzofenona (BP), present en l'estructura química d'una àmplia varietat de fàrmacs, té el potencial de fotosensibilitzar dany a l'ADN, especialment a la base de timina (Thy). Aquest dany pot donar lloc a dímers de pirimidina de tipus ciclobutà (CPD) i a fotoproductes (6-4) pirimidina-pirimidona ((6-4)PPs), els quals poden causar mutacions greus, melanomes o fins i tot la mort cel·lular. En alguns organismes, els (6-4)PPs poden reparar-se de manera eficient per les fotoliases, en el que es podria entendre com una reacció Paternò-Büchi (PB) inversa a través d'un intermedi d'oxetà altament inestable. Amb la finalitat d'aprofundir en la fotoreactivitat dels derivats BP-Thy i en la ruptura fotoinduïda d'oxetans, es van sintetitzar per primera vegada una varietat de diades en les quals Thy i BP estan covalentment unides per un espaiador lineal de diferent longitud i naturalesa. La fotoreactivitat dels diferents derivats es va investigar per fotòlisi de centelleig làser (LFP) i espectroscopía d'absorció transitòria a escala de femtosegons; a més, es van aïllar i caracteritzar els principals fotoproductes (PPs) derivats de la irradiació en estat estacionari. Els resultats van mostrar un alt grau de quimioselectivitat en la longitud i conformació de l'espaiador. Quant a la reactivitat fotoquímica, es van formar PPs derivats de la PB i de l'abstracció formal d'hidrogen; així, les diades amb l'espaiador més llarg van donar lloc a la formació d'oxetans i de PPs d'abstracció d'hidrogen. Per contra, les diades amb espaiadors més curts van formar un fotoproducte d'abstracció formal d'hidrogen i/o polimerització. Per tant, la fotoreactivitat es va veure influïda per la longitud de l'espaiador, correlacionant-se bé amb els temps de 3BP*, observant-se els temps més curts per a les diades amb espaiadors llargs. En relació amb la fotoapertura d'oxetans, la irradiació dels diferents regi- i estereoisòmers va conduir a la formació de la típica banda d'absorció triplet-triplet de BP; per tant, aquest procés opera de manera adiabàtica. La fotòlisi de l'oxetà que resulta de la irradiació de la diada amb l'espaiador més llarg va mostrar una banda d'absorció transitòria sobre 400 nm, atribuïda a la formació de l'exciplex triplet entre BP i Thy covalentment units. D'altra banda, es va investigar la reacció PB i la cicloreversió d'oxetans que sorgeixen de la interacció entre Thy o derivats d'uracil (Ura) i BP. Així, es va sintetitzar una àmplia gamma d'oxetans Thy-BP i Ura-BP amb diferents substituents en les posicions 1 i 5 de la nucleobase, incloent-se els regioisòmers cap-cap (HH) i cap-cua (HT). Els estudis espectroscòpics (absorció transitòria ultraràpida i LFP), juntament amb l'anàlisi teòric, coincideixen en que la cicloreversió fotoinduïda per als isòmers HH i HT implica la formació d'un exciplex en l'estat excitat triplet abans de la ruptura. Generalment, es va observar que la reacció va ser completament adiabàtica per als regioisòmers HH. En el cas de l'oxetà HH que sorgeix de la interacció entre 1,3-dimetiltimina (DMT) i BP, es va observar la formació d'una banda ~400 nm, que es va atribuir a l'exciplex triplet 3[DMT···BP]*. La seua formació va ser altament regioselectiva, sent més ràpida i eficient per a l'isòmer HH que per a HT. Aquests resultats van ser confirmats per anàlisi computacional. En general, es va observar adiabaticitat en el procés de fotoreversió per a tots els oxetans investigats, amb un alt grau de regioselectivitat i amb la participació d'exciplexes triplet. / [EN] Sunlight light can produce damage to DNA through direct absorption of UVB or, more commonly, by photosensitization upon absorption of UVA light by drugs, that act as a photosensitizer (PS). Benzophenone (BP) as a building-block is present in a wide variety of drugs, and have the potential to photosensitize damage to DNA, specially towards the thymine (Thy) nucleobase. The resulting DNA damage can give rise to bulky dimers, i.e. cyclobutane pyrimidine dimers (CPDs) and pyrimidine-pyrimidone (6-4) photoproducts ((6-4)PPs), which can cause severe mutations, melanomas, or even be fatal for the cell. In some organisms, (6-4)PP can be efficiently repaired by photolyase enzymes, in what could be a reverse Paternò-Büchi (PB) reaction through an unstable oxetane intermediate. With the aim of getting deeper insight into the photoreactivity of BP-Thy derivatives and in the photoinduced cleavage of oxetanes, a variety of dyads where Thy and BP are covalently linked by a linear spacer of different lengths and nature were first synthesized. The photochemical reactivity and the photophysical properties of the different derivatives were investigated by means of laser flash photolysis (LFP) and femtosecond transient absorption spectroscopy; besides, the main photoproducts (PPs) arising from steady-state irradiation were also isolated and characterized. The results showed a high degree of chemoselectivity on the linking bridge length and conformation. Concerning the photochemical reactivity, PPs arising from the PB and from formal hydrogen abstraction were formed. In this context, the PB reaction took place for the dyads with the longest spacer with complete regio- and stereoselectivity, along with a hydrogen abstraction process. Finally, the dyads with shorter spacers gave rise to a formal hydrogen abstraction photoproduct and/or polymerization. Accordingly, the overall photoreactivity was proportional to the spacer length and was well correlated with the 3BP* lifetimes, the longer spacers giving rise to shorter lifetimes. In connection to the oxetane photocleavage, irradiation of the different regio- and stereoisomeric oxetanes led to the formation of the typical triplet-triplet absorption band of BP. Accordingly, the photoinduced cycloreversion also operates as an adiabatic process. Photolysis of the oxetane that results from irradiation of the dyad with the longest spacer showed a transient absorption at ~400 nm, which is ascribed to formation of the purported triplet exciplex between BP and Thy covalently linked. Additionally, the PB reaction and the cycloreversion of oxetanes arising from the interaction between Thy or uracil (Ura) derivatives and BP were also investigated. Thus, a wide range of Thy-BP and Ura-BP oxetanes with varying substituents at positions 1 and 5 of the nucleobase were synthesized, including both the head-to-head (HH) and head-to-tail (HT) regioisomers. Spectroscopic studies, including femtosecond transient absorption and LFP results, as well as theoretical multiconfigurational quantum chemistry analysis, agree that the photoinduced cycloreversion for the HH and HT isomers involved the formation of a triplet excited exciplex before the cleavage takes place. Generally, the photochemical reaction was fully adiabatic for the HH regioisomers. In the case of the HH-oxetane arising from the interaction between 1,3-dimethylthymine (DMT) and BP, an absorption band at ca. 400 nm was formed, and was attributed to the triplet exciplex 3[DMT···BP]*. Its formation was highly regioselective towards the HH regioisomer, being faster and more efficient than for the HT isomer. These results were confirmed by computational analysis. In general, adiabaticity was observed in the photoreversion process for all oxetanes, with a high degree of regioselectivity, which falls in line with the theory of the involvement of a triplet exciplex in the process. / Thanks to the Generalitat Valenciana for the finantial support through the Santiago Grisolía grant. / Blasco Brusola, A. (2021). Mechanistic Studies on the Photochemical Formation and Cleavage of Oxetanes Derived from Pyrimidine Bases [Tesis doctoral]. Universitat Politècnica de València. https://doi.org/10.4995/Thesis/10251/165256

ITC/USA 2009 Conference Proceedings / The Forty-Fifth Annual International Telemetering Conference and Technical Exhibition / October 26-29, 2009 / Riviera Hotel & Convention Center, Las Vegas, Nevada / Telemetry data recorders are not immune to the effects that a number of disruptive technologies have had on the telemetry industry. Data recorder designs today make use of data buses, storage types and graphical user interfaces that are constantly evolving based on the advances of personal computer and consumer electronics technologies. Many of these recorders use embedded designs that integrate disruptive technologies such as PCI Express for realtime data and signal processing, SATA interfaces for data storage and touchscreen technologies to provide an intuitive operator interface. Solid state drives also play a larger role in the latest recorder designs. This paper will explore the effects of these technologies on the latest telemetry recorders in terms of the benefits to the users, cost of implementation, obsolescence management, and integration considerations. The implications of early adoption of disruptive technologies will also be reviewed.

International Telemetering Conference Proceedings / October 26-29, 1998 / Town & Country Resort Hotel and Convention Center, San Diego, California / The Test & Evaluation community is starting to migrate toward solid state recording. This paper outlines some of the important areas that are new to solid state recording as well as examining some of the issues involved in moving to a direct recording methodology. Some of the parameters used to choose a solid state memory architecture are included. A matrix to compare various methods of data recording, such as solid state and magnetic tape recording, will be discussed. These various methods will be evaluated using the following parameters: Ruggedness (Shock, Vibration, Temperature), Capacity, and Reliability (Error Correction). A short discussion of data formats with an emphasis on efficiency and usability is included.

Community Renewal International is a not profit group based in Shreveport, La. whose mission is to partnering with God and with each other to make our world a home where every child can grow up safe and loved. This report is the personal account from the photographer of a photojournalism project covering the organization. It includes the struggles of, stories from, and intention of the photographer. / text