Equispaced beam arrangements are typically used for IMRT plans. This beam arrangement provides adequate dose coverage to the target while sparing dose to other structures. However, an equispaced beam arrangement may not provide the best dose coverage to the target while sparing dose to the other structures. Beam angle optimization attempts to optimize the beam directions to produce a better IMRT plan; this is achieved by increasing dose to the target while minimizing dose to the remaining structures. Most methods of beam angle optimization attempt to optimize the beam angles and the beam intensity profiles to find an optimal set of beam angles. This thesis attempts to optimize the beam angles without determining the beam intensity profiles. An MCNP simulation is run to score the beam directions; the simulation is run as an adjoint problem to reduce simulation time, with the target as the source and the detectors scoring the dose for the gantry angles of the beam. Then, an optimization algorithm is run to select a set of beam angles for an optimized IMRT plan. The optimized IMRT plan is compared to an equispaced IMRT plan on a commercial treatment planning system to determine if this method of beam angle optimization is better than using an equispaced beam arrangement. The results of this thesis indicate that the coupling of an MCNP simulation for scoring with an optimization algorithm to select beam angles will produce a better IMRT plan than an equispaced IMRT plan. Three different geometries were used and for all geometries, the optimized IMRT plan had a higher average dose to the target while maintaining or increasing dose sparing to the critical structure and normal tissue.

This article describes that we grew InGaN ternary films by Plasma- Assisted Molecular Beam Epitaxy (PAMBE) on the ZnO substrate O-polar (0001) surface. Before we grew the films, we grew the InN films on the ZnO substrate to find out the interface reaction conditions. We used Double Crystal X-ray Diffraction (XRD) to analyze the diffraction peak of InGaN films after we grew them. We found it was very hard to grow the single content InGaN films by generally methods. We tried period shutter control method to grow films, and we succeeded to grow the single phase films. We analyzed the morphologies by AFM and SEM, the microstructures by TEM, the electric properties by Hall measurement, and the fluorescent characteristics by PL.

The purpose of our research is growing the coupled InGaAs quantum dots on the n-type substrate by molecular beam epitaxy in laboratory, and we choose 5,10 and 15 nanometers to be the thicknesses of GaAs spacer between the quantum dots layer. Due to the couple effect, we hope to realize the theorem of intermediate band proved by Luque and Marti. We measure the characteristic of samples by electroluminescence spectra, photoelectric current spectra, electrical absorption spectra and electro reflectance spectra in laboratory; moreover, we acquire the basic parameters of solar cell by AM1.5G for analyzing. From the basic parameters of solar cell, we know that the quantum dots can enhance the photocurrent by absorbing additional photons , however, the strain caused by quantum dots would decay the open voltage seriously, so that the efficiency always under the baseline. Each efficiency of 9-stack QDs are 4.3%(c494),5.1%(c519),5.3% (c520),and each efficiency of 9-stack Dwells are 3.9%(c524),4.2%(c525),4.7%(c526), and 10-stack QDs(5nm) is 2.9%(c514),and 12-stack QDs(10nm) is 4.48%(c538),and 12-stack QDs(15nm) is 5.89%. The break through of this paper is that the efficiency of c529¡]VOC=0.64V,JSC=11.97mA/cm2,FF=67%,£b=5.89%¡^is higher than GaAs¡]VOC =0.87 V, JSC =7.4 mA/cm2,FF=72.3%,£b=5.6%¡^,and we attribute this performance to its good quality of miniband, because the current can be enhanced a lot, and it will make up for the lose of open voltage and filling factor, so that the efficiency can be higher than GaAs baseline.

With the proliferation of mobile devices and the advance of audio/video coding technologies, there is an increasing demand to provide quality-of-service (QoS) guarantees for multimedia applications. A WLAN (wireless local are network) typically consists of an access point (AP) and a finite set of mobile stations. Since the AP is generally more powerful and less physical constraint than mobile stations, it is of great interest to consider the use of sectorized multi-beam antennas at the AP to boost the network throughput by exploiting the benefit of spatial reuse. IEEE 802.11 is current the de facto standard for WLANs. However, if we directly apply 802.11 to the WLAN with multi-beam AP without any modification, we will encounter many challenging problems. Although existing solutions modify the 802.11 DCF (distributed coordination function) to solve these problems, yet DCF does not provide any QoS support. On the basis of 802.11e HCCA (hybrid channel control access), in this thesis, we propose a novel MAC protocol, named MPCF (multi-beam AP-assisted point coordination function), which is not only backward compatible with DCF, but also supports QoS functionalities, including non-reversal prioritization, time-bounded reservation, admission control, and cross-layer rate adaptation for multimedia streaming. Simulation results show that, in terms of throughput, frame delay dropped rate, and energy throughput, MPCF significantly outperforms existing protocols even in imperfect beam-forming and mobility environments.

The dynamic characteristics of shroud blade group played a significant role in steam turbine design. However, the complex shape and periodical structure of shroud blades make it so hard to find its dynamic characteristics under high speed operation. The complicate shape, periodic structure, and tedious computation limit the application of finite element method in the design analysis of shroud group blades. In order to design the shroud blade group, the component mode synthesis method was employed to derive the system dynamic equation of the grouped periodical blades. For simplicity, a pre-twisted and tapered cantilever beam is used to derive the approximate analytic solution of a rotating turbo blade. Then the approximated eigen solution of single blade is synthesized in company with the constrain condition by using the component mode synthesis method. In order to confirm the feasibility of the proposed simulation method, a real size turbine blade is used to discuss in the study. Through a comparison between the results solved from the proposed method and finite element method of single blade and shroud blade group to prove the reliability of the proposed method. The effect of blade parameters on the dynamic characteristic of shroud blade group has investigated in this work. Numerical results indicate the proposed method is feasible and effective in dynamic design analyses of the shroud blade group.

In this thesis, we have reported the MBE growth, design, and fabrication of the InGaAs quantum dots (QDs) laser/semiconductor optical amplifier, broadband QDs structure, coupled double cavity structure for terahertz emission on GaAs substrate. The emission wavelengths of the strain-induced S-K growth mode QDs structures are adjusted through the composition of QDs and strain-compensated capping layer. Also, the technique of growing high quality InGaAs QDs with solid source molecular beam epitaxy has been established and characterized by double crystal X-ray diffraction, transmission electron microscopy, photoluminescence, electroluminescence measurements. For 1.3£gm QDs laser samples, ridge waveguide lasers of the Fabry-Perot (FP) type are fabricated by wet-etching process. From the QDs laser L-I curve, the e2-hh2 transition at £f =1160nm have larger optical gain than e1-hh1 transition at £f =1220nm. The FP laser with 0.6£gm cavity length shows a lasing peak of 1160nm at threshold. As the cavity length increase to 2£gm, the lasing peak red shift to 1220nm (closed to ground state emission wavelength). This energy band gap transition phenomenon is obvious especially in the QDs laser with quantum well (QW) structure. When the injection current increase, two lasing peaks at £f= 1160 and 1175nm are observed sequentially. This unique lasing behavior is shown to be consistent with carriers localized in noninteracting dots. For the application of 1.3£gm light source, we optimum the growth condition for different needs in optical coherent tomography (OCT) light source, tandem solar cell, terahertz emission light source, etc. For the super luminescence diode (SLED) in OCT, we design multi-stacked asymmetric QDs structure (AMQD), QDs in the well structure (DWell), Dwell with p-doping in well structure to investigate the carrier recombination condition and bandwidth. Comparing with 5 structures in this study, the Dwell with p-doping in well structure has a maximum EL bandwidth exceed 198nm. The large bandwidth is attributed to the QW which increases the carrier capture rate and the p-doping which provide the efficient holes in valance band. This structure provides an excellent SLED light source solution to replace the existing program. For the tandem solar cell, we use the multi-stack QDs to compose broadband absorption in 1eV range. In order to avoid the degradation in the open circuit voltage, we use InGaAs QW to reduce the QDs strain. We observed the doping effect on the built in field through the photo-reflectance measurements. For the better photocurrent collection, we use p-doping in the QW to increase the built-in field intensity to obtain higher efficiency. For the terahertz emission, the QDs embedded in coupled double-cavity structures with an AlAs/GaAs intermediate distributed Bragg reflector (DBR) are grown on GaAs substrates. Two emission peaks at 1180, 1206 nm from the QDs corresponding to the coupled double-cavity resonant modes are observed in the high reflection band. The frequency differences for the two resonant coupled modes are of 5.5 terahertz, and have been successfully controlled by changing the pair numbers for the intermediate DBR. In addition, we have grown the InGa(Al)As nanostructures on InP substrate. The lattice constant difference between InGaAs and InP is relatively smaller compare with GaAs substrate, and it will be more challenge in epitaxial growth. After we investigate the strain, surface morphologies, optical properties for the nanostructures, we find the group III elements play an important role in the morphologies. Wire formation is attributed by the enhanced adatom diffusion length in the stepped surface front along [0-11] direction for the presence of Ga both in the nanostructure and buffer layer. Finally, we established QDs, Qwires database for the valuable new possibilities for designing new and original structures.

The purpose of the thesis is enhancing efficiency of asymmetric quantum dots (AMQD) solar cells. The AMQD structures are grown on the n-type GaAs substrate by (MBE). In order to enhance the photovoltaic characteristics, we introduce InGaAs quantum well (QW) and modulation doping in the well to investigate effect of the strain relief and built-in electric field in the active layer. In our experiment, we analyze the optical property of AMQD structures by photoluminescence measurement system, and then decompose emission wavelength by Gaussian fitting to find optical characteristics of each single layer quantum dots. Besides, we also measure photocurrent spectra, external quantum efficiency, electrical absorption, and electro reflectance spectra to discuss carrier transition inside AMQD structure . Finally, we acquire the photovoltaic basic parameter under one sun. The results show that QDs provide additional photocurrent via absorbing extra photons, but the open circuit voltage decrease seriously due to the accumulated strains. So as to relieve the strains and enhance carriers extraction, we introduce QW layers with different growth temperatures and change the modulation doping concentrations . From the results, the higher growth temperature for QW diminishes accumulated strains, and the higher p-type modulation doping concentration indicates an extraction enhancement due to the stronger built-in electric field. By optimizing QW growth conditions, the efficiency has overtaken GaAs baseline cells. In addition, we improve the photon-excited current collection by using matrix pattern and wet etching on the device surface, the best photovoltaic characteristic shows V OC = 0.74 V, J SC = 18.82 mA/cm2, FF = 0.78, £b= 10.86%.

This text pursues the causes and phenomena in the course of the collapse of the molten metal layer surrounding a keyhole which is full of vapor and liquid particles during the high energy laser or electron beam drilling process. And the formation mechanism of the pores for the drilling process, to study the collapse phenomenon of the liquid layer is essential. In the research the collapse of the keyhole is taken as approximated to a transition between the slug and annular two-phase flows in a vertical pipe of varying cross-section. We develop and solve a quasi-steady, one-dimensional model for two phase flow with the assumption that the mixture in the core homogenous, ignoring the friction of the liquid layer, regarding the flow in the keyhole as supersonic, considering the mass transfer of the liquid layer to the keyhole. Two-phase flow can be liquid particle entrainment characteristics, infiltration precipitation, divided into two regions. The collapse of keyhole resulted from the infiltration of the liquid particles is chained to the pore formation. Based on the realization of annular two phase flow, In this text, that the liquid into the holes in the physical properties and caused pores formation.

Increase in consumption of fresh cut produce over the past decade has resulted in a rise in incidents of food borne outbreaks due to pathogens. Conventional techniques of sanitizing washes may not be effective since the organic matter released from the fresh produce use up the free chlorine thus reducing the sanitizing potential of wash water just when it is needed most and a heat treatment step to kill pathogens cannot be applied if the purpose is to consume fresh produce. Electron beam (e-beam) irradiation was used to treat cut cantaloupe, cut roma tomatoes, baby spinach, romaine lettuce which were surface inoculated with a cocktail of Salmonella and E. coli O157:H7. Results showed that irradiation reduced Salmonella and E. coli O157:H7 significantly with increasing doses at 0.2, 0.4, 0.6, 0.8, and 1.0 kGy. The D10-value for Salmonella on irradiated cut cantaloupe, cut roma tomatoes, baby spinach, and romaine lettuce was found to be 0.71 kGy, 0.64 kGy, 0.19 kGy, and 0.23 kGy respectively. The D10-value for E. coli O157:H7 on the produce listed above was found to be 0.73 kGy, 0.54 kGy, 0.18 kGy, and 0.20 kGy respectively. Low dose e-beam irradiation was found to be an excellent tool for ensuring the reduction of spoilage organisms and extending shelf life in cut cantaloupe, cut roma tomatoes, baby spinach, romaine lettuce, strawberries, and green onion. The produce were tested for 12 days of storage for aerobic plate count, yeast and mold, lactic bacteria, color, texture, and respiration rate as a function of irradiation doses 0, 1, 3, and 5 kGy. Aerobic plate counts, yeast counts, and lactic acid bacteria were reduced appreciably at all doses tested on all commodities. Molds did not grow on any samples including control for cut cantaloupe, cut tomatoes, and green onion but for the other commodities, mold was reduced at the same rate as yeasts and vegetative bacteria. Lactic acid bacteria were reduced at all doses while the reduction was highest with 5 kGy in all commodities. When irradiated with 5 kGy, during storage, strawberries, spinach, and green onion displayed wet, soggy and mushy appearance, romaine lettuce leaves were wilted, had a translucent midrib and brown pigmentation. E-beam irradiation increased respiration rate for all samples on day 0 compared to non-irradiated control irrespective of the commodity type and the effect was dose dependent. Firmness reduced appreciably for cut roma tomatoes, baby spinach, strawberries, romaine lettuce, and green onion with increasing doses. Cut cantaloupe was low in firmness but the effect was not dose dependent. Irradiation at low doses is a promising tool to reduce pathogens and enhance keeping quality of cut cantaloupe, cut tomatoes, baby spinach, romaine lettuce, strawberries, and green onion. Irradiation is to be implemented as part of an overall HACCP plan and is not meant to replace existing control measures.

The ultrasonic nondestructive technique is mainly used to evaluate interior defect, material properties and outside dimensions by measuring the transmitting and reflecting sound waves. Generally, the evaluation of the ultrasonic testing depends on the amplitudes and delay time of the received signals; however, this research is focused on the analysis of the phase differences of the received signals. The leakage phenomenon of surface waves propagating at the liquid-solid interface has been studied for more than fifty years. The main characteristic of this phenomenon is the 180-degree phase difference between the reflected and leaky ultrasound when a bounded ultrasonic beam is incidented. And the null zone caused by the interference of these two waves is appearing in the reflected field. The phase difference is changed as the surface condition altered, including surface roughness and layered structures. The normal-mode theory is used at this research to analyze the analytical model of the leaky surface wave in thin layered structures. In experiments, the measurements of the reflected field are proceeded by the scanning system, so as to analyze the phase difference between the reflected and leaky ultrasound and calculate the layer thickness by the phase difference. As a result of the surface roughness of the thin layers, the leakage is more serious when the ultrasound propagates with lower frequency. For the consideration of locating the null-zone in the reflected field, this research prefers using lower frequency as an initial frequency at the beginning of the testing, then increasing the frequency to achieve a better sensitive of the thickness.