Made available in DSpace on 2015-04-22T22:11:00Z (GMT). No. of bitstreams: 1 fernando pereira.pdf: 2934075 bytes, checksum: 5904e954a9d2d8c122e6038457aeb2ab (MD5) Previous issue date: 2013-08-15 / Jungle lodges in small towns have a very important role to play in these times of ecological tourism, environmental rescue and the importance of enjoying the contact with nature in order to preserve it. This study aimed to demonstrate that the Balanced Scorecard can serve as a tool for managing alternative tourist hotel enterprises, family business, located in the city of Presidente Figueiredo, Amazonas state, Brasil. The Balanced Scorecard is a strategic management tool most widely used by organizations in Brazil and in the world and their goal is to evaluate and measure the organizational performance using indicators. These indicators reflect the mission, strategy and objectives into operational performance and operational data and are organized into four perspectives : financial , customer , internal processes and learning, and growth. This research regarding the technical procedures was a case study and, a descriptive study in order to identify, describe and analyze the facts of reality. In this study eight projects were observed, data were collected and analyzed without interfering directly in their functioning in order to propose the Balanced Scorecard as a strategic management system. Among the effective results were identified in the projects that they go through difficulties in their management. These difficulties are at different degrees at distinct issues: financial resources, number of staff, no occupancy during weekdays, space and support structure for services and stimulate the generation of ideas and suggestions. The main result was a proposal for implementing the Balanced Scorecard as a strategic management tool in the projects evaluated. So we reached the conclusion that the Balanced Scorecard is a strategic management tool suitable to be applied to projects due to its ease application and control. The application of the proposed Balanced Scorecard in the projects will improve efficiency in the provision of services, allow higher qualification level of employees, increase the level of satisfaction and loyalty, and generate greater financial return to the owner of the enterprise. / Os hotéis de selva de pequenas cidades do interior tem um papel muito importante a desempenhar nestes tempos de turismo ecológico, resgate do meio ambiente e da importância de usufruir o contato com a natureza, a fim de preservá-la. A presente pesquisa teve como objetivo demonstrar que o Balanced Scorecard pode servir de ferramenta alternativa de gestão para empreendimentos hoteleiros turísticos de gerenciamento familiar localizados na cidade de Presidente Figueiredo no Estado do Amazonas. O Balanced Scorecard é uma das ferramentas da gestão estratégica mais utilizada atualmente pelas organizações no Brasil e no mundo e seu objetivo é avaliar e medir o desempenho organizacional utilizando indicadores. Estes indicadores traduzem a missão, a estratégia e os objetivos operacionais em dados operacionais de desempenho e são organizados em quatro perspectivas: financeira, cliente, processos internos e aprendizado e crescimento. Esta pesquisa quanto aos procedimentos técnicos foi um estudo de caso e quanto à forma de estudo, uma pesquisa descritiva com o intuito de identificar, descrever e analisar os fatos da realidade. Neste trabalho observou-se o funcionamento de oito empreendimentos, os dados foram coletados e analisados sem interferir diretamente no funcionamento dos mesmos com o intuito de propor o Balanced Scorecard como sistema de gestão estratégica. Dentre os resultados efetivos foram identificados nos empreendimentos que eles passam por dificuldade no seu gerenciamento. Essas dificuldades são em graus diferenciados em pontos diferentes: recursos financeiros, número de funcionários, ociosidade na ocupação dos empreendimentos durante os dias úteis da semana, espaço físico e estrutura de suporte para serviços e estímulo à geração de ideias e sugestões. O principal resultado obtido foi uma proposta de aplicação do Balanced Scorecard como ferramenta de gestão estratégica nos empreendimentos avaliados. Portanto, chegou-se a conclusão que o Balanced Scorecard é uma ferramenta de gestão estratégica adequada para ser aplicada aos empreendimentos devido à facilidade de aplicação e controle da mesma. A aplicação da proposta do Balanced Scorecard nos empreendimentos aprimorará a eficiência na prestação de serviços, permitirá maior qualificação dos funcionários, aumentará o nível de satisfação e fidelidade dos clientes além de maior retorno financeiro para o proprietário do empreendimento.

The objective of this dissertation is to shed light on the physical properties of InN epilayers grown by High-Pressure Chemical Vapor Deposition (HPCVD) for optical device applications. Physical properties of HPCVD grown InN layers were investigated by X-ray diffraction, Raman scattering, infrared reflection spectroscopies, and atomic force microscopy. The dependencies of physical properties as well as surface morphologies of InN layers grown either directly on sapphire substrates or on GaN/sapphire templates on varied growth conditions were studied. The effect of crucial growth parameters such as growth pressure, V/III molar ratio, precursor pulse separation, substrate material, and mass transport along the flow direction on the optical and structural properties, as well as on the surface morphologies were investigated separately. At present, growth of high-quality InN material by conventional growth techniques is limited due to low dissociation temperature of InN (~600 ºC) and large difference in the partial pressures of TMI and NH3 precursors. In this research, HPCVD technique, in which ambient nitrogen is injected into reaction zone at super-atmospheric growth pressures, was utilized to suppress surface dissociation of InN at high temperatures. At high pressures, long-range and short-range orderings indicate that c-lattice constant is shorter and E2(high) mode frequency is higher than those obtained from low-pressure growth techniques, revealing that InN structure compressed either due to a hydrostatic pressure during the growth or thermal contraction during the annealing. Although the influence of varied growth parameters usually exhibit consistent correlation between long-range and short-range crystalline orderings, inconsistent correlation of these indicate inclination of InN anisotropy. InN layers, grown directly on α-sapphire substrates, exhibit InN (1 0 1) Bragg reflex. This might be due to a high c/a ratio of sapphire-grown InN epilayers compared to that of GaN/sapphire-grown InN epilayers. Optical analysis indicates that free carrier concentration, ne, in the range of 1–50 × 1018 cm–3 exhibits consistent tendency with longitudinal-optic phonon. However, for high ne values, electrostatic forces dominate over inter-atomic forces, and consistent tendency between ne and LO phonon disappears. Structural results reveal that growth temperature increases ~6.6 ºC/bar and V/III ratio affects indium migration and/or evaporation. The growth temperature and V/III ratio of InN thin films are optimized at ~850 ºC and 2400 molar ratio, respectively. Although high in-plane strain and c/a ratio values are obtained for sapphire-grown epilayers, FWHM values of long-range and short-range orderings and free carrier concentration value are still lower than those of GaN/sapphire-grown epilayers. Finally, vibrational and optical properties of chalcopyrite ZGP crystal on the (001), (110), and (10) crystalline planes were investigated by Raman scattering and infrared (IR) reflection spectroscopies. Raman scattering exhibits a nonlinear polarizability on the c-plane, and a linear polarizability on the a- and b-planes of ZGP crystal. Also, birefringence of ZGP crystal was calculated from the hydrostatic pressure difference between (110) and (10) crystalline planes for mid-frequency B2(LO) mode.

Les nitrures d'éléments III sont des semi-conducteurs dont l'émission optique suscite un grand intérêt en vue des applications optoélectroniques. Nous avons analysé leurs propriétés optiques, vibrationnelles, électroniques et cristallographiques, notamment par le biais de la spectroscopie Raman. Les systèmes typiques que nous avons examinés correspondent à l'état de l'art de la croissance des différents composés de la famille des nitrures d'éléments III : nous avons considéré des îlots et films micrométriques d'InN, ainsi que des hétérostructures (super-réseaux et boîtes quantiques) à base de GaN et d'AlN.<br />L'étude présentée porte en particulier sur les processus de relaxation des contraintes dans les îlots et les boîtes quantiques, ainsi que sur les mécanismes de diffusion inélastique de la lumière dans InN et la dynamique de réseau dans les nanostructures. Ce travail est fortement marqué par les aspects expérimentaux, et une part importante de ce manuscrit est consacrée aux résultats obtenus sous haute pression.

Insulating the exterior wall of an historic property can have the benefits of increasing thermal comfort for occupants as well as reducing energy use for heating and cooling. Concerns expressed by preservationists that insulation can lead to the degradation of the building structure or its historic fabric. Using the Park Inn Hotel, an early twentieth century commercial property designed by Frank Lloyd Wright, the application, feasibility, ramifications and potential benefits of applying insulation to the exterior wall was studied. Analysis for insulation includes evaluation of the historic characteristics, construction of the exterior wall, heat loss calculations, and how moisture will be transported through the wall. It was found that the key to determining if the exterior wall of a historic building can be insulated successfully without damage to the historic characteristics of the building or to the building itself, is in understanding how the building was designed and how it deals with moisture. With a thorough understanding of these elements, one can ascertain if insulating the exterior wall of his/her historic building is appropriate. / Department of Architecture

Les semi-conducteurs nitrures (AlN, GaN, InN) focalisent une activité de recherche intense en raison de nombreuses applications comme les diodes électroluminescentes, les composants de puissance ou hyperfréquence. Dans cette recherche, nous avons abordé le travail sous deux angles: a) la conduction électrique dans les couches d'InN produites par croissance épitaxiale aux jets moléculaires assistée par plasma (PAMBE) et une recherche sur l'origine de la forte émission bleue dans les puits de quantiques d'InGaN/GaN. L'accumulation d'électron en surface dans les couches d'InN constitue une limitation importante pour la fabrication de composants. Au cours de ce travail, nous avons exploré l'utilisation des mesures de bruit de basse fréquence sur les couches d'InN et pu accéder à leur conductivité électrique en volume. L'étude des puits quantiques d'InGaN/GaN, obtenue par croissance épitaxiale aux jets moléculaires (MBE) ou épitaxie en phase vapeurs aux organométalliques (MOVPE) , a été effectuée par analyses de la microstructure par microscopie électronique en transmission (MET, HRTEM et STEM) en corrélation avec les propriétés optiques d'un grand nombre d'échantillons provenant de conditions de croissance différentes. Ce travail nous a permis d'acquérir une vision plus critique du rôle des conditions de fabrication et des paramètres comme la morphologie, les fluctuations de composition et la présence des défauts en V sur les explications actuellement avancées pour la forte efficacité d'émission dans les puits quantiques d' InGaN/GaN.

No description available.

The diploma thesis deals with measurement of former Peklo inn in Tišnov and creates a documentation of its building. Measurement is connected to the binding reference system – the S-JTSK coordinate sytem and Baltic Vertical Datum Bpv. The thesis countains a description of the place of interest and history of the building, preparatory work, choice of instruments and tools. In the next part measurement, processed of recorded data, requirements of creating documentation of the ground plan and vertical section, testing results of the work, are described. The thesis countains ground plan of the cellar, ground plan of the second floor and the vertical section of the building in scale of 1:50. Outcomes of thesis will serve as documentation of the current conditions of the building.

Group III-nitride semiconductors are well suited for the fabrication of devices including visible-ultraviolet light emitting diodes, high-temperature and high-frequency devices. The wurtzite III-nitride based heterostructures grown along polar c-direction have large internal electric fields due to discontinuities in spontaneous and piezoelectric polarizations. For optoelectronic devices, such as light-emitting diodes and laser diodes, the internal electric field is deleterious as it causes a spatial separation of electron and hole wave functions in the quantum wells, which decreases emission efficiency. Growth of GaN-based heterostructures in alternative orientations, which have reduced (semipolar) or no polarization (nonpolar) in the growth direction, has been a major area of research in the last few years. The correlation between structural, optical and transport properties of semipolar and nonpolar III-nitride would be extremely useful. The thesis focuses on the growth and characterizations of semipolar and nonpolar III-nitride heterostructures by plasma-assisted molecular beam epitaxy. Chapter 1 provides a brief introduction to the III-nitride semiconductors. The importance of semipolar and nonpolar III-nitride heterostructures over conventional polar heterostructures has been discussed. Chapter 2 deals with the descriptions of molecular beam epitaxy system and working principles of different characterization tools used in the present work. Chapter 3 addresses the molecular beam epitaxial growth of nonpolar (1 1 -2 0) and semipolar (1 1 -2 2) GaN on sapphire substrates. An in-plane orientation relationship is found to be [0 0 0 1] GaN || [-1 1 0 1] sapphire and [-1 1 0 0] GaN || [1 1 -2 0] sapphire for nonpolar GaN on r-sapphire substrates. Effect of growth temperature on structural, morphological and optical properties of nonpolar GaN has been studied. The growth temperature plays a major role in controlling crystal quality, morphology and emission properties of nonpolar a-plane GaN. The a-plane GaN shows crystalline anisotropy nature and it has reduced with increase in the growth temperature. The surface roughness was found to decrease with increase in growth temperature and film grown at 760°C shows reasonably smooth surface with roughness 3.05 nm. Room temperature photoluminescence spectra show near band emission peak at 3.434 -3.442 eV. The film grown at 800 ºC shows broad yellow luminescence peak at 2.2 eV. Low temperature photoluminescence spectra show near band emission at 3.483 eV along with defect related emissions. Raman spectra exhibit blue shift due to compressive strain in the film. An in-plane orientation relationship is found to be [1 -1 00] GaN || [1 2-1 0] sapphire and [-1 -1 2 3] GaN || [0 0 0 1] sapphire for semipolar GaN on m-plane sapphire substrates. The surface morphology of semipolar GaN film is found to be reasonably smooth with pits on the surface. Room temperature photoluminescence shows the near band emission (NBE) at 3.432 eV, which is slightly blue shifted compared to the bulk GaN. The Raman E2 (high) peak position observed at 569.1 cm1. Chapter 4 deals with the fabrication and characterizations of Au/nonpolar and Au/semipolar GaN schottky diodes. The temperature-dependent current–voltage measurements have been used to determine the current mechanisms in Schottky diodes fabricated on nonpolar a-plane GaN and semipolar GaN epilayers. The barrier height (φb) and ideally factor (η) estimated from the thermionic emission model are found to be temperature dependent in nature indicate the deviations from the thermionic emission (TE) transport mechanism. Low temperature I-V characteristics of Au/ GaN Schottky diode show temperature independent tunnelling parameter. Barrier heights calculated from XPS are found to be 0.96 eV and 1.13 eV for Au/nonpolar GaN and Au/semipolar GaN respectively. Chapter 5 demonstrates the growth of InN on r-sapphire substrates with and without GaN buffer layer. InN film and nanostructures are grown on r-sapphire without GaN buffer layer and they are highly oriented along (0002) direction. The electron microscopy study confirms the nanostructures are vertically aligned and highly oriented along the (0001) direction. The Raman studies of InN nanostructures show the SO modes along with the other possible Raman modes. The band gap of InN nanostructures is found to be 0.82 eV. InN grown with a-plane GaN buffer shows nonpolar orientated growth. Growth temperature dependent studies of nonpolar a-plane InN epilayers are carried out. The valence band offset value is calculated to be 1.31 eV for nonpolar a-plane InN/GaN heterojunctions. The heterojunctions form in the type-I straddling configuration with a conduction band offsets of 1.41 eV. Chapter 6 deals with the temperature dependent I-V characteristics of the nonpolar a-plane (1 1 -2 0) InN/GaN heterostructures. The measured values of barrier height and ideality factor from the TE model show the temperature dependent variation. The double Gaussian distribution has mean barrier height values ( ϕb ) of 1.17 and 0.69 eV with standard deviation (σs ) of 0.17 and 0.098 V, respectively. The modified Richardson plot ln (Is/T2)-q2σ2/2k2T2 ) versus q/kT in the temperature range of 350 – 500 K, yielded the Richardson constant of 19.5 A/cm2 K2 which is very close to the theoretical value of 24 A/cm2 K2 for n-type GaN. The tunneling parameters E0 found to be temperature independent at low temperature range (150 –300 K). Chapter 7 concludes with the summary of present investigations and the scope for future work.

本研究利用「平衡計分卡」之觀念，以我國中、小型產險業為對象，探討及建議其建立策略核心組織之相關作法。首先以總體性的經營危機，喚醒業界對「經濟任務」之關注，而平衡計分卡經評估與實證之經驗為最有效的策略執行工具，提供了經濟任務達成之具體藍圖。認識「平衡計分卡」之關鍵精神外，業界必須從基本體認「策略管理」理論主張，再深入分析計分卡轉化策略為營運架構的五個構面：財務面、顧客面、績效行銷面、內部流程面及學習與成長面。接著，以正確的認知，構築策略地圖與計分卡-策略規劃流程圖與績效衡量系統(法則一)，它強化了企業策略執行面的語言，並奠定推展「策略核心組織」之後續法則基礎：法則二、以策略為核心整合組織資源、法則三，將策略落實為每個人的日常工作、法則四、讓策略成為持續性循環流程、法則五，由高階領導帶動變革，透過這些法則流程引導產險業「變革計劃」之執行。其中，以筆者創意之目標市場：「溫心小棧」為本研究之主要差異化策略、並利用績效行銷構面中之計量模型，在一定前提性假設下，估算出每張保險單之實效額以及示範性之部門間「服務協約」、整合性獎勵辦法、修正式預算制度等，使業界於應用平衡計分卡時具實務上之可行性。 關鍵字：平衡計分卡、策略核心組織、經濟任務、五個構面、變革計劃、溫心小棧 / This thesis undertakes the Balanced Scorecard (BSC) concept to examine the issues related to establishing a strategy-focused organization for the small and medium non-life insurance companies in Taiwan. It emphasizes on the issue of macro-business crisis and intends to awake the target companies' perception on their economy mission. The BSC is one vehicle in strategy implementation based upon survey and practical application, and able to accomplish economy mission of target companies with streamlined map. With respect of the BSC fundamentals, target companies need to understand the basic proposition of strategy management planning, then analyze five perspectives of the BSC, namely finance, customer, performance, marketing,internal, and learning and growth. With the above perceptions, the following rules need to be undertaken： establishing a strategy map and scorecard (rule 1), integrating resources of organizations under the strategy (rule 2), transforming the strategy into the staff’s routine job (rule 3), making the strategy as a continuing procedure (rule 4) and conducting a change plan by the senior management (rule 5). As the conclusive recommendation, certain mechanisms integrated for facilitating practical availability are submitted to small and medium non-life insurance companies in Taiwan： 1. Key differentiated strategy - targeted markets： a “Sweet Inn”; 2. Merit evaluated based on certain assumptions; 3. Demonstrated service agreements among units； 4. Integrated compensation system; and 5. Revised budgeting plans. Keywords: The Balanced Scorecard、The Strategy-Focused Organization、Economy Mission、Five Perspectives、Change Plan、Sweet Inn

Les matériaux semiconducteurs III N (AlN, GaN, InN) présentent des propriétés intéressantes pour la micro et l'opto-électronique. Ils peuvent être soumis à différents types d'irradiation dans une large gamme d'énergie de projectile. Dans l'AlN, initialement considéré insensible aux excitations électroniques (Se), nous avons mis en évidence une synergie inédite entre Se et les chocs nucléaires (Sn) pour la création de défauts absorbants à 4.7 eV. Par ailleurs, un autre effet du Se est mis en évidence dans l'AlN : les dislocations vis subissent, sous l'effet du Se, une montée aux fortes fluences d'irradiation. Dans le GaN, deux mécanismes de création peuvent être à l'origine des défauts absorbants à 2.8 eV: une synergie entre Se et Sn, ou une création uniquement due à Sn mais avec un fort effet de la taille des cascades de déplacement. L'étude, par MET, des effets de Se dans les trois matériaux, montre un comportement très différent d'un matériau à l'autre bien qu'ils appartiennent à la même famille des nitrures avec la même structure atomique. Sous irradiation aux ions monoatomiques (vitesse entre 0.4 et 5 MeV/u), tandis que l'on observe des traces discontinues dans le GaN et l'InN, aucune trace n'est observée dans l'AlN avec le plus fort pouvoir d'arrêt électronique (33 keV/nm). Il faut des fullerènes pour observer des traces dans l'AlN. Le modèle de la pointe thermique inélastique a permis de calculer les énergies nécessaires pour produire des traces dans l'AlN, le GaN et l'InN, elles sont respectivement de 4.2 eV/atome, 1.5 eV/atome et 0.8 eV/atome. Cette différence de sensibilité aux effets de Se, se retrouve également aux fortes fluences d'irradiation.