In this work, the electronic band structure of III (In, Al, Ga) - V (N, As, Sb) compounds and their ternary alloys have been investigated by density functional theory (DFT) within generalized gradient approximation (GGA) and empirical tight binding (ETB) calculations, respectively. The present DFT-GGA calculations have shown direct band gap structures in zinc-blende phase for InN, InAs, InSb, GaN, and GaAs. However, indirect band gap structures have been obtained for cubic AlN, AlSb and AlAs com- pounds / here, the conduction band minima of both AlN and AlAs are located at X symmetry point, while that of AlSb is at a position lying along Gamma- X direction. An important part of this work consists of ETB calculations which have been parameterized for sp3d2 basis and nearest neighbor interactions to study the band gap bowing of III(In / Al)- V(N / As / Sb) ternary alloys. This ETB model provides a satisfactory electronic properties of alloys within reasonable calculation time compared to the calculations of DFT. Since the present ETB energy parameters reproduce successfully the band structures of the compounds at &iexcl / and X symme- try points, they are considered reliable for the band gap bowing calculations of the ternary alloys. In the present work, the band gap engineering of InNxAs1&iexcl / x, InNxSb1&iexcl / x, InAsxSb1&iexcl / x, Al1&iexcl / xInxN, Al1&iexcl / xInxSb and Al1&iexcl / xInxAs alloys has been studied for total range of constituents (0 &lt / x &lt / 1). The downward band gap bowing seems the largest in InNxAs1&iexcl / x alloys among the alloys considered in this work. A metallic character of InNxAs1&iexcl / x, InNxSb1&iexcl / x and InAsxSb1&iexcl / x has been ob- tained in the present calculations for certain concentration range of constituents (N / As) as predicted in the literature. Even for a small amount of contents (x), a decrease of the electronic e&reg / ective mass around &iexcl / symmetry point appears for InNxAs1-x, InNxSb1-x and InAsxSb1-x alloys manifesting itself by an increase of the band curvature. The calculated cross over from indirect to direct band gap of ternary Al alloys has been found to be consistent with the measurements. As a last summary, the determinations of the band gaps of alloys as a function of contents, the concentration range of con- stituents leading to metallic character of the alloys, the change of the electronic effective mass around the Brillioun zone center (Gamma) as a function of alloy contents, the cross over from indirect to direct band gap of the alloys which are direct on one end, indirect on the other end, are main achievements in this work, indispensable for the development of mate- rials leading to new modern circuit components.

The popularity of III-nitride materials has taken up the semiconductor industry to newer applications because of their remarkable properties. In addition to having a direct and wide band gap of 3.4 eV, a very fascinating property of GaN is the band gap tuning from 0.7 to 6.2 eV by alloying with Al or In. The most common orientation to grow optoelectronic devices out of these materials are the polar c-plane which are strongly affected by the intrinsic spontaneous and piezoelectric polarization fields. Devices grown in no polar orientation such as (1 0 –1 0) m-plane or (1 1 –2 0) a-plane have no polarization in the growth direction and are receiving a lot of focus due to enhanced behaviour. The first part of this thesis deals with the development of non-polar epimGaN films of usable quality, on an m-plane sapphire by plasma assisted molecular beam epitaxy. Growth conditions such as growth temperature and Ga/N flux ratio were tuned to obtain a reasonably good crystalline quality film. MSM photodetectors were fabricated from (1 0 -1 0) m-GaN, (1 1 -2 0) a-GaN and semipolar (1 1 -2 2) GaN films and were compared with the polar (0 0 0 2) c-GaN epilayer. Later part of the thesis investigated (1 0 -1 0) InN/ (1 0 -1 0) GaN heterostructures. Further, we could successfully grow single composition nonpolar a-plane InxGa1-xN epilayers on (1 1 -2 0) GaN / (1 -1 0 2) sapphire substrate. This thesis focuses on the growth and characterisation of nonpolar GaN, InxGa1-xN and InN by plasma assisted molecular beam epitaxy and on their photodetection potential. Chapter 1 explains the motivation of this thesis work with an introduction to the III-nitride material and the choice of the substrate made. Polarization effect in the polar, nonpolar and semipolar oriented growth is discussed. Fabrication of semiconductor photodetectors and its principle is explained in details. Chapter 2 discusses the various experimental tools used for the growth and characterisation of the film. Molecular beam epitaxy technique is elaborately explained along with details of the calibration for the BEP of various effusion cells along with growth temperature at the substrate. Chapter 3 discusses the consequence of nitridation on bare m-sapphire substrate. Impact of nitridation step prior to the growth of GaN film over (1 0 -1 0) m-sapphire substrate was also studied. The films grown on the nitridated surface resulted in a nonpolar (1 0 -1 0) orientation while without nitridation caused a semipolar (1 1 -2 2) orientation. Room temperature photoluminescence study showed that nonpolar GaN films have higher value of compressive strain as compared to semipolar GaN films, which was further confirmed by room temperature Raman spectroscopy. The room temperature UV photodetection of both films was investigated by measuring the I-V characteristics under UV light illumination. UV photodetectors fabricated on nonpolar GaN showed better characteristics, including higher external quantum efficiency, compared to photodetectors fabricated on semipolar GaN. Chapter 4 focuses on the optimization and characterisation of nonpolar (1 0 -1 0) m-GaN on m-sapphire by molecular beam epitaxy. A brief introduction to the challenges in growing a pure single phase nonpolar (1 0 -1 0) GaN on (1 0 -1 0) sapphire without any other semipolar GaN growth is followed by our results achieving the same. Effect of the growth temperature and Ga/N ratio on the structural and optical properties of m-GaN epilayers was studied and the best condition was obtained for the growth temperature of 7600C and nitrogen flow of 1 sccm. Strain in the film was quantitatively measured using Raman spectroscopy and qualitatively analyzed by RSM. Au/ nonpolar GaN schottky diode was fabricated and temperature dependent I-V characteristics showed rectifying nature. Chapter 5 demonstrates the growth of (1 0 -1 0) m-InN / (1 0 -1 0) m-GaN / (1 0 -1 0) m-sapphire substrate. Nonpolar InN layer was grown at growth temperature ranging from 3900C to 440C to obtain a good quality film at 4000C. An in-plane relationship was established for the hetrostructures using phi-scan and a perfect alignment was found for the epilayers. RSM images on the asymmetric plane revealed highly strained layers. InN band gap was found to be around 0.8 eV from absorption spectra. The valance band offset value is calculated to be 0.93 eV for nonpolar m-plane InN/GaN heterojunctions. The heterojunctions form in the type-I straddling configuration with a conduction band offsets of 1.82 eV. Chapter 6 focuses on the optimization of nonpolar (1 1 -2 0) a-GaN on (1 -1 0 2) r-sapphire by molecular beam epitaxy. Effect of the growth temperature and Ga/N ratio on the structural and optical properties of a-GaN epilayers was studied and the best condition was obtained for the growth temperature of 7600C and nitrogen flow of 1 sccm. An in-plane orientation relationship is found to be [0 0 0 1] GaN || [-1 1 0 1] sapphire and [-1 1 0 0] GaN || [1 1 -2 0] sapphire for nonpolar GaN on r-sapphire substrate. Strain in the film was quantitatively measured using Raman spectroscopy and qualitatively analyzed by RSM. UV photo response of a-GaN film was measured after fabricating an MSM structure over the film with Au. EQE of the photodetectors fabricated in the (0 0 0 2) polar and (1 1 -2 0) nonpolar growth directions were compared in terms of responsively, nonpolar a-GaN showed the best sensitivity at the cost of comparatively slow response time. Chapter 7 demonstrates the growth of non-polar (1 1 -2 0) a-plane InGaN epilayers on a-plane (1 1 -2 0) GaN/ (1 -1 0 2) r-plane sapphire substrate using PAMBE. The high resolution X-ray diffraction (HRXRD) studies confirmed the orientation of the films and the compositions to be In0.19Ga0.81N, In0.21Ga0.79N and In0.23Ga0.77N. The compositions of the films were controlled by the growth parameters such as growth temperature and indium flux. Effect of variation of Indium composition on the strain of the epilayers was analyzed from the asymmetric RSM images. Further, we report the growth of self-assembled non-polar high indium clusters of In0.55Ga0.45N over non-polar (1 1 -2 0) a-plane In0.17Ga0.83N epilayer grown on a-plane (1 1 -2 0) GaN / (1 -1 0 2) r-plane sapphire substrate. The structure hence grown when investigated for photo-detecting properties, showed sensitivity to both infrared and ultraviolet radiations due to the different composition of InGaN region. Chapter 8 concludes with the summary of present investigations and the scope for future work.

(in English) The thesis aimed to explore the topos of inn in relation to the topos of journey in fantasy literature. The first step was to define the term fantasy literature with regard to the set of texts selected for the analysis; namely their connection to mythology and fairy tales, genres working with hero's initiation journey. Integral part of the thesis was to consider theoretical works focused on the image of pubs in literature, as well as a short description of the form and function of this topos in other genres. The subject of the analysis were inns from six fictional worlds representing a cross-section of the genre from the half of the 20th century until present time, while the selected examples fall mostly into the sub-genre of epic fantasy. The analysis showed that the inns have four primary functions: hero's intimate space, place of meeting and cognition, place of transformation and place of stories. Each of these functions is connected to a specific part of the initiation journey and represents its beginning, or one of its tests. All these functions are also connected to certain issues related to hero's psychological journey, namely the issue of trust, identity and will. The inns which serve as hero's intimate space have a special position; they reflect his or her state of mind and...

The global social, ecological and economic challenges facing humanity today have given rise to the UN's 17 Global Objectives and Agenda 2030 to achieve sustainable development. Kate Raworth, professor of economics from Oxford University, has in the same spirit developed a visual framework with seven related conditions for mankind to live by, to strive towards living within a safe and fair zone of sustainable development. This framework and associated conditions for sustainable development are applied in this study with the intention to investigate and concretize the potentially contributing sustainable development effects of a norm-creative waste management project in a process of sustainable societal development. The results of the study show clear evidence that the waste management project has contributed to sustainable societal development according to the respondents who participated in the study. However, further studies are required to concretize these results through a more scientifically objective methodology. / De globala sociala, ekologiska och ekonomiska utmaningarna som mänskligheten står inför i dagsläget har gett upphov till FN’s 17 globala mål och agenda 2030 för att vägleda mänskligheten mot en hållbar utveckling. Kate Raworth, professor i ekonomi från Oxfords universitet, har i samma anda utvecklat ett visuellt ramverk med sju tillhörande förutsättningar för mänskligheten att sträva mot för att leva inom ett säkert och rättvist utrymme av hållbar utveckling. Detta ramverk och tillhörande förutsättningar för hållbar utveckling appliceras i den här studien med syftet att undersöka och konkretisera ett normkreativt avfallsprojekts potentiellt bidragande effekter till en hållbar samhällsutveckling. Resultatet av undersökningen påvisar tydliga belägg för att avfallsprojektet har bidragit till en hållbar samhällsutveckling utefter det teoretiska ramverket enligt respondenter som deltagit i studien. Det krävs dock vidare studier för att konkretisera dessa resultat i mer objektiva sammanhang.

Through the history of mankind, novel materials have played a key role in techno- logical progress. As we approach the limits of scaling it becomes difficult to squeeze out any more extensions to Moore’s law by just reducing device feature sizes. It is important to look for an alternate semiconductor to silicon in order to continue making the progress predicted by Moore’s law. Among the various semiconductor options being explored world-wide, the III-nitride semiconductor material system has certain unique characteristics that make it one of the leading contenders. We explore the III-nitride semiconductor material system for the unique advantages that it offers over the other alternatives available to us. This thesis studies the device applications of epitaxial III-nitride films and nanos- tructures grown using plasma assisted molecular beam epitaxy (PAMBE) The material characterisation of the PAMBE grown epitaxial III-nitrides was car- ried out using techniques like high resolution X-ray diffraction (HR-XRD), field emis- sion scanning electron microscopy (FESEM), room temperature photoluminescence (PL) and transmission electron microscopy (TEM). The epitaxial III-nitrides were then further processed to fabricate devices like Schottky diodes, photodetectors and surface acoustic wave (SAW) devices. The electrical charcterisation of the fabricated devices was carried out using techniques like Hall measurement, IV and CV measure- ments on a DC probe station and S-parameter measurements on a vector network analyser connected to an RF probe station. We begin our work on Schottky diodes by explaining the motivation for adding an interfacial layer in a metal-semiconductor Schottky contact and how high-k di- electrics like HfO2 have been relatively unexplored in this application. We report the work carried out on the Pt/n-GaN metal-semiconductor (MS) Schottky and the Pt/HfO2/n-GaN metal-insulator-semiconductor (MIS) Schottky diode. We report an improvement in the diode parameters like barrier height (0.52 eV to 0.63 eV), ideality factor (2.1 to 1.3) and rectification ratio (35.9 to 98.9 @2V bias) after the introduction of 5 nm of HfO2 as the interfacial layer. Temperature dependent I-V measurements were done to gain a further understanding of the interface. We observe that the barrier height and ideality factor exhibit a temperature dependence. This was attributed to inhomogeneities at the interface and by assuming a Gaussian distribution of barrier heights. UV and IR photodetectors using III-nitrides are then studied. Our work on UV photodetectors describes the growth of epitaxial GaN films. Au nanoparticles were fabricated on these films using thermal evaporation and annealing. Al nanostruc- tures were fabricated using nanosphere lithography. Plasmonic enhancement using these metallic nanostructures was explored by fabricating metal-semiconductor-metal (MSM) photodetectors. We observed plasmonic enhancement of photocurrent in both cases. To obtain greater improvement, we etched down on the GaN film using reac tive ion etching (RIE). This resulted in further increase in photocurrent along with a reduction in dark current which was attributed to creation of new trap states. IR photodetectors studied in this thesis are InN quantum dots whose density can be controlled by varying the indium flux during growth. We observe that increase in InN quantum dot density results in increase in photocurrent and decrease in dark current in the fabricated IR photodetectors. We then explore the advantages that InGaN offers as a material that supports surface acoustic waves and fabricate InGaN based surface acoustic wave devices. We describe the growth of epitaxial In0.23 Ga0.77 N films on GaN template using molecular beam epitaxy. Material characterisation was carried out using HR-XRD, FESEM, PL and TEM. The composition was determined from HR-XRD and PL measurements and both results matched each other. This was followed by the fabrication of interdigited electrodes with finger spacing of 10 µm. S-parameter results showed a transmission peak at 104 MHz with an insertion loss of 19 dB. To the best of our knowledge, this is the first demonstration of an InGaN based SAW device. In summary, this thesis demonstrates the practical advantages of epitaxially grown film and nanostructured III-nitride materials such as GaN, InN and InGaN using plasma assisted molecular beam epitaxy for Schottky diodes, UV and IR photodetec- tors and surface acoustic wave devices.

Introduction : Le virus de l’hépatite C (VHC), est l’une des premières causes de pathologie hépatique dans le monde. Ce virus à ARN est responsable de l’hépatite C qui aboutit au développement de la cirrhose et du cancer du foie. Selon l’Organisation Mondiale de la Santé, le VHC infecte actuellement plus de 170 millions de personnes dans le monde, soit 3% de la population. L’hépatite C chronique connait toujours en Tunisie un taux de guérison faible pour le génotype 1 car le traitement standard actuellement disponible est la bithérapie interféron pégylé associé à la ribavirine. A l’heure actuelle, le développement de différentes molécules ciblant spécifiquement le VHC, appelées les antiviraux à action directe (AAD), apparait comme une potentielle révolution dans le traitement de l’infection par le VHC.Ces AAD comprennent les inhibiteurs de protéase (IP), les inhibiteurs nucléos(t)idiques (IN) et les inhibiteurs non-nucléosidiques (INN) de la polymérase NS5B ainsi que les inhibiteurs de la protéine NS5A. La quasi-espèce virale est formée d’un mélange complexe de variants viraux parmi lesquels se trouvent des variants associés à des degrés variables à la résistance aux AAD. Ces variants peuvent donc exister naturellement en absence de toute pression médicamenteuse et sont susceptibles d’avoir un impact sur la réponse aux différents traitements par AAD. Notre objectif était de déterminer la prévalence des variants associés à la résistance dans les souches tunisiennes circulantes en préambule à l’introduction deces molécules en Tunisie. Méthodes : L’amplification et le séquençage direct de la protéase NS3, de la polymérase NS5B ainsi que la région NS5A ont été effectuées chez 149 patients tunisiens naïfs de traitement et infectés par le VHC de génotype 1 (génotype 1b = 142 ; génotype 1a = 7). Résultats : Douze séquences NS3 (12/131 ; 9,2%) ont montré des mutations connes pour conférer une résistance aux IP. Une seule séquence (1/95 ; 1,1%) a montré la mutation V321I connue pour conférer une résistance aux IN-NS5B. Trente quatre séquences (34/95 ; 35,8%) ont montré des mutations connues pour diminuer la sensibilité des INN-NS5B. Une seule séquence de génotype 1a (1/7 ; 14,3%) et 17 séquences de génotype 1b (17/112 ; 16,2%) ont montré des mutations connues pour conférer une résistance au inhibiteurs de la protéine NS5A. Conclusions : Notre étude a permis de mettre en évidence la présence de substitutions conférant une diminution de la sensibilité aux AAD chez des patients tunisiens naïfs de tout traitement anti-VHC. Des études in situ seront nécessaires pour évaluer l’impact de ces mutations sur la réponse au traitement. / Introduction: Hepatitis C virus (HCV) is a major cause of liver disease worldwide. This RNA virus is responsible for hepatitis C, which leads to the development of cirrhosis and liver cancer. According to the World Health Organization, HCV infects more than 170 million people worldwide, about 3% of the population. Chronic hepatitis C still know in Tunisia low cure rates for genotype 1, because the currently standard treatment available is combination therapy of pegylated interferon plus ribavirin. At present, the development of different molecules that specifically target HCV, called direct-acting antivirals (DAA) appears as a potential revolution in the treatment of HCV infection. These DAA include protease inhibitors (PI), nucleos(t)ide (NI) and non-nucleoside inhibitors (NNI) for NS5B polymerase and NS5A inhibitors. The viral quasispecies is formed by a complex mixture of viral variants including variants associated with variable degrees of resistance to DAA. These variants may therefore exist naturally in absence of drug pressure and may affect response to different treatments by DAA. Our objective was to determine the prevalence of variants associated with resistance in circulating Tunisian strains preamble to the introduction of these molecules in Tunisia. Methods: Amplification and direct sequencing of NS3 protease, NS5B polymerase and NS5A region were performed in 149 Tunisian naïve patients infected with HCV genotype 1 (genotype 1b = 142; genotype 1a = 7) . Results: Twelve sequences NS3 (12/131; 9.2%) showed mutations known to confer resistance to PI. One sequence (1/95; 1.1%) showed the V321I mutation known to confer resistance to NS5B-IN. Thirty four sequences (34/95; 35.8%) showed mutations known to reduce the sensitivity of NS5B-INN. One genotype 1a sequence (1/7; 14.3%) and 17 genotype 1b sequences (17/112; 16.2%) showed mutations known to confer resistance to NS5A inhibitors.Conclusions: Our study highlighted the presence of substitutions conferring decreased susceptibility to DAA in naïve patients infected with HCV genotype 1. Field studies will be needed to evaluate the impact of these mutations on the treatment response.

Pour la fabrication des transistors hyperfréquences de puissance à base de nitrures, l’alliage InAlN est considéré comme une meilleure barrière qu’AlGaN grâce à l’accord de maille pour une composition en indium voisine de 18 %. Ainsi le gaz d'électrons à deux dimensions (2DEG) est-il généré seulement par la polarisation spontanée dans une hétérointerface InAlN/GaN sans contrainte résiduelle pour une fabrication de transistors aux performances optimales. Cependant, durant sa croissance sur GaN, sa qualité cristalline se dégrade avec l’épaisseur et il se forme des défauts V au niveau de l’interface. Afin de déterminer les sources de ce comportement, nous avons mené une étude théorique par dynamique moléculaire et techniques ab initio pour analyser la stabilité et les propriétés des alliages des composés nitrures en nous focalisant particulièrement sur InAlN. L’analyse des diagrammes de phase a permis de montrer que cet alliage présente une large gamme d’instabilité en composition d’indium et un comportement différent d’InGaN sous compression avec une instabilité amplifiée sous forte pression. En déterminant la stabilité énergétique de la lacune d’azote en interaction avec l’indium, nous avons montré que ce défaut ponctuel autour duquel des atomes d’indium tendent à retrouver une longueur de liaison voisine de celle dans InN pouvait être un catalyseur pour la formation de clusters dans cet alliage. Ces clusters d’InN introduisent des niveaux donneurs profonds dans la bande interdite. En ce qui concerne les dislocations traversantes, nos résultats montrent qu’elles auront aussi tendance à capturer des atomes d’indium dans leur cœur pour minimiser leur énergie. Ainsi nous avons pu apporter les bases théoriques qui montrent que la lacune d’azote participe à la dégradation spontanée des couches d’InAlN et que les dislocations traversantes sont amenées à y participer en attirant les atomes d’indium et donc en renforçant la séparation de phase en leur voisinage. / For the fabrication of nitride-based power microwave transistors, the InAlN alloy is considered to be a better barrier than AlGaN thanks to the lattice match with GaN for an indium composition around 18%. Thus the two-dimensional electron gas (2DEG) is generated only by the spontaneous polarization at the AlInN/GaN heterointerface for a production of highest performance transistors. However, during its growth on GaN, its crystalline quality deteriorates with the thickness and V-defects are formed at the layer surface. To determine the sources of this behavior, we carried out a theoretical study by molecular dynamics and ab initio techniques to analyze the stability and the properties of alloys of nitride compounds, focusing particularly on InAlN. The analysis of the phase diagrams showed that this alloy has a wide zone of instability versus the indium composition and a different behavior with InGaN with amplified instability under high compressive strain. By determining the energetic stability of the nitrogen vacancy could be catalyst for forming clusters in this alloy. These InN clusters introduce deep donor levels inside the band gap. With regard to treading dislocations, our results show that they will also tend to capture indium atoms in their cores in order to minimize their energy. Thus, we have been able to provide a theoretical basis that show that the nitrogen vacancy participates in the spontaneous degradation of the AlInN layers and that the threading dislocations participate by attracting the indium atoms and thus reinforcing the separation of phase in their vicinity.

In this thesis the major objective is the implementation of the inverse neural network concept in the design of printed lens (transmitarray) antenna. As it is computationally extensive to perform full-wave simulations for entire transmitarray structure and thereafter perform optimization, the idea is to generate a design database assuming that a unit cell of the transmitarray is situated inside a 2D infinite periodic structure. This way we generate a design database of transmission coefficient by varying the unit cell parameters. Since, for the actual design, we need dimensions for each cell on the transmitarray aperture and to do this we need to invert the design database. The major contribution of this thesis is the proposal and the implementation of database inversion methodology namely inverse neural network modelling. We provide the algorithms for carrying out the inversion process as well as provide check results to demonstrate the reliability of the proposed methodology. Finally, we apply this approach to design a transmitarray antenna, and measure its performance.

This project aims to take the investigation of food in early modern drama, in itself a relatively new field, in a new direction. It does this by shifting the critical focus from food-based metaphors to food-based properties and food-producing cook characters. This shift reveals exciting, unexpected, and hitherto unnoticed contexts. In The Taming of the Shrew and Titus Andronicus, which were written during William Shakespeare’s inn-yard playhouse period, the playwright exploits these exceptionally aromatic venues in order to trigger site-specific responses to food-based scenes in these plays. Ben Jonson’s Bartholomew Fair brings fair-appropriate gingerbread properties onstage. When we look beneath the surface of this food effect to its bread and wine ingredients, however, it reveals a subtext that satirizes the theory of transubstantiation. Jonson expands on this theme by using Ursula’s cooking fire (a property staged in Jonson’s representation of Smithfield’s Bartholomew Fair) to engage with the prison narrative of Anne Askew, who was burned to death in front of Bartholomew Priory on the historic Smithfield for denying the doctrine of transubstantiation. This thesis also investigates water, which, for early moderns, was a complex and quasi-mystical liquid: it was a primary element, it washed sin from the world during the Great Flood, it was a marker of status, it was a medicine, and it was a cookery ingredient. Christopher Marlowe not only uses dirty water to humiliate his doomed monarch in Edward II, but he also uses it to apportion blame to the king for his own downfall. In Timon of Athens, Shakespeare draws on the theory of the elements to cast Timon as a man of water, who, Jesus-like, breaks up and divides (or splashes around) his body at his “last” supper. Fully-fledged cook characters were a relative rarity on the early modern stage. This project looks at two exceptions: Furnace in Philip Massinger’s A New Way to Pay Old Debts and the unnamed master cook in John Fletcher’s The Tragedy of Rollo, Duke of Normandy. Both playwrights use their respective gastronomic geniuses to demonstrate the danger that lower-order expertise poses to the upper classes when society is in flux. Finally, this project demonstrates that a link existed between ornate domestic food effects and alchemy. It shows how Philip Massinger’s The Great Duke of Florence and Thomas Middleton’s Women, Beware Women use food properties associated with alchemy to satirize notions of perfection in their play-worlds.