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Ternary luminescent copper and silver indium sulfide quantum dots (QDs) can be an attractive alternative to cadmium and lead chalcogenide QDs. The optical properties of Cu–In–S and Ag–In–S (AIS) QDs vary over a broad range depending on the QD composition and size. The implementation of ternary QDs as emitters in bio-sensing applications can be boosted by the development of mild and reproducible syntheses directly in aqueous solutions as well as the methods of shifting the photoluminescence (PL) bands of such QDs as far as possible into the near IR spectral range. In the present work, the copper-doping of aqueous non-stoichiometric AIS QDs was found to result in a red shift of the PL band maximum from around 630 nm to ∼780 nm and PL quenching. The deposition of a ZnS shell results in PL intensity recovery with the highest quantum yield of 15%, with almost not change in the PL band position, opposite to the undoped AIS QDs. Size-selective precipitation using 2-propanol as a non-solvent allows discrimination of up to 9 fractions of Cu-doped AIS/ZnS QDs with the average sizes in the fractions varying from around 3 to 2 nm and smaller and with reasonably the same composition irrespective of the QD size. The decrease of the average QD size results in a blue PL shift yielding a series of bright luminophors with the emission color varies from deep-red to bluish-green and the PL efficiency increases from 11% for the first fraction to up to 58% for the smallest Cu-doped AIS/ZnS QDs. The rate constant of the radiative recombination of the size-selected Cu-doped AIS/ZnS QDs revealed a steady growth with the QD size decrease as a result of the size-dependent enhancement of the spatial exciton confinement. The copper doping was found to result in an enhancement of the photoelectrochemical activity of CAIS/ZnS QDs introduced as spectral sensitizers of mesoporous titania photoanodes of liquid-junction solar cells.

Ternary luminescent copper and silver indium sulfide quantum dots (QDs) can be an attractive alternative to cadmium and lead chalcogenide QDs. The optical properties of Cu–In–S and Ag–In–S (AIS) QDs vary over a broad range depending on the QD composition and size. The implementation of ternary QDs as emitters in bio-sensing applications can be boosted by the development of mild and reproducible syntheses directly in aqueous solutions as well as the methods of shifting the photoluminescence (PL) bands of such QDs as far as possible into the near IR spectral range. In the present work, the copper-doping of aqueous non-stoichiometric AIS QDs was found to result in a red shift of the PL band maximum from around 630 nm to ∼780 nm and PL quenching. The deposition of a ZnS shell results in PL intensity recovery with the highest quantum yield of 15%, with almost not change in the PL band position, opposite to the undoped AIS QDs. Size-selective precipitation using 2-propanol as a non-solvent allows discrimination of up to 9 fractions of Cu-doped AIS/ZnS QDs with the average sizes in the fractions varying from around 3 to 2 nm and smaller and with reasonably the same composition irrespective of the QD size. The decrease of the average QD size results in a blue PL shift yielding a series of bright luminophors with the emission color varies from deep-red to bluish-green and the PL efficiency increases from 11% for the first fraction to up to 58% for the smallest Cu-doped AIS/ZnS QDs. The rate constant of the radiative recombination of the size-selected Cu-doped AIS/ZnS QDs revealed a steady growth with the QD size decrease as a result of the size-dependent enhancement of the spatial exciton confinement. The copper doping was found to result in an enhancement of the photoelectrochemical activity of CAIS/ZnS QDs introduced as spectral sensitizers of mesoporous titania photoanodes of liquid-junction solar cells.

Copper films with a thickness in the nanometer range are required as seed layers for the electrochemical Cu deposition to form multilevel interconnects in ultralarge-scale integrated (ULSI) electronic devices. Continuously shrinking device dimensions and increasing aspect ratios of the dual-damascene structures in the copper-based metallization schemes put ever more stringent requirements on the films with respect to their conformality in nanostructures and thickness homogeneity across large wafers. Due to its intrinsic self-limiting film growth characteristic, atomic layer deposition (ALD) appears appropriate for homogeneously coating complex substrates and to replace conventional physical vapor deposition (PVD) methods beyond the 32 nm technology node. To overcome issues of direct Cu ALD, such as film agglomeration at higher temperatures or reduced step coverage in plasma-based processes, an ALD copper oxide film may be grown under mild processing conditions, while a subsequent reduction step converts it to metallic copper. In this poster, which was presented at the AVS 9th International Conference on Atomic Layer Deposition (ALD 2009), held in Monterey, California from 19 to 22 July 2009, we report detailed film growth studies of ALD copper oxide in the self-limiting regime on SiO2, TaN and Ru. Applications in subsequent electrochemical deposition processes are discussed, comparing Cu plating results on as-deposited PVD Ru as well as with PVD and reduced ALD Cu seed layer.

The atomic layer deposition (ALD) of copper oxide films from [(ⁿBu₃P)₂Cu(acac)] and wet oxygen on SiO₂ and TaN has been studied in detail by spectroscopic ellipsometry and atomic force microscopy. The results suggest island growth on SiO₂, along with a strong variation of the optical properties of the films in the early stages of the growth and signs of quantum confinement, typical for nanocrystals. In addition, differences both in growth behavior and film properties appear on dry and wet thermal SiO₂. Electron diffraction together with transmission electron microscopy shows that nanocrystalline Cu₂O with crystallites < 5 nm is formed, while upon prolonged electron irradiation the films decompose and metallic copper crystallites of approximately 10 nm precipitate. On TaN, the films grow in a linear, layer-by-layer manner, reproducing the initial substrate roughness. Saturated growth obtained at 120&deg;C on TaN as well as dry and wet SiO₂ indicates well-established ALD growth regimes. <br> &copy; 2009 The Electrochemical Society. All rights reserved.

Copper-based multi-level metallization systems in today’s ultralarge-scale integrated electronic circuits require the fabrication of diffusion barriers and conductive seed layers for the electrochemical metal deposition. Such films of only several nanometers in thickness have to be deposited void-free and conformal in patterned dielectrics. The envisaged further reduction of the geometric dimensions of the interconnect system calls for coating techniques that circumvent the drawbacks of the well-established physical vapor deposition. The atomic layer deposition method (ALD) allows depositing films on the nanometer scale conformally both on three-dimensional objects as well as on large-area substrates. The present work therefore is concerned with the development of an ALD process to grow copper oxide films based on the metal-organic precursor bis(tri-n-butylphosphane)copper(I)acetylacetonate [(nBu3P)2Cu(acac)]. This liquid, non-fluorinated β-diketonate is brought to react with a mixture of water vapor and oxygen at temperatures from 100 to 160°C. Typical ALD-like growth behavior arises between 100 and 130°C, depending on the respective substrate used. On tantalum nitride and silicon dioxide substrates, smooth films and self-saturating film growth, typical for ALD, are obtained. On ruthenium substrates, positive deposition results are obtained as well. However, a considerable intermixing of the ALD copper oxide with the underlying films takes place. Tantalum substrates lead to a fast self-decomposition of the copper precursor. As a consequence, isolated nuclei or larger particles are always obtained together with continuous films. The copper oxide films grown by ALD can be reduced to copper by vapor-phase processes. If formic acid is used as the reducing agent, these processes can already be carried out at similar temperatures as the ALD, so that agglomeration of the films is largely avoided. Also for an integration with subsequent electrochemical copper deposition, the combination of ALD copper and ruthenium proves advantageous, especially with respect to the quality of the electroplated films and their filling behavior in interconnect structures. Furthermore, the ALD process developed also bears potential for an integration with carbon nanotubes. / Kupferbasierte Mehrlagenmetallisierungssysteme in heutigen hochintegrierten elektronischen Schaltkreisen erfordern die Herstellung von Diffusionsbarrieren und leitfähigen Keimschichten für die galvanische Metallabscheidung. Diese Schichten von nur wenigen Nanometern Dicke müssen konform und fehlerfrei in strukturierten Dielektrika abgeschieden werden. Die sich abzeichnende weitere Verkleinerung der geometrischen Dimensionen des Leitbahnsystems erfordert Beschichtungstechnologien, die vorhandene Nachteile der bisher etablierten Physikalischen Dampfphasenabscheidung beheben. Die Methode der Atomlagenabscheidung (ALD) ermöglicht es, Schichten im Nanometerbereich sowohl auf dreidimensional strukturierten Objekten als auch auf großflächigen Substraten gleichmäßig herzustellen. Die vorliegende Arbeit befasst sich daher mit der Entwicklung eines ALD-Prozesses zur Abscheidung von Kupferoxidschichten, ausgehend von der metallorganischen Vorstufe Bis(tri-n-butylphosphan)kupfer(I)acetylacetonat [(nBu3P)2Cu(acac)]. Dieses flüssige, nichtfluorierte β-Diketonat wird bei Temperaturen zwischen 100 und 160°C mit einer Mischung aus Wasserdampf und Sauerstoff zur Reaktion gebracht. ALD-typisches Schichtwachstum stellt sich in Abhängigkeit des gewählten Substrats zwischen 100 und 130°C ein. Auf Tantalnitrid- und Siliziumdioxidsubstraten werden dabei sehr glatte Schichten bei gesättigtem Wachstumsverhalten erhalten. Auch auf Rutheniumsubstraten werden gute Abscheideergebnisse erzielt, jedoch kommt es hier zu einer merklichen Durchmischung des ALD-Kupferoxids mit dem Untergrund. Tantalsubstrate führen zu einer schnellen Selbstzersetzung des Kupferprecursors, in dessen Folge neben geschlossenen Schichten während der ALD auch immer isolierte Keime oder größere Partikel erhalten werden. Die mittels ALD gewachsenen Kupferoxidschichten können in Gasphasenprozessen zu Kupfer reduziert werden. Wird Ameisensäure als Reduktionsmittel genutzt, können diese Prozesse bereits bei ähnlichen Temperaturen wie die ALD durchgeführt werden, so dass Agglomeration der Schichten weitgehend verhindert wird. Als besonders vorteilhaft für die Ameisensäure-Reduktion erweisen sich Rutheniumsubstrate. Auch für eine Integration mit nachfolgenden Galvanikprozessen zur Abscheidung von Kupfer zeigen sich Vorteile der Kombination ALD-Kupfer/Ruthenium, insbesondere hinsichtlich der Qualität der erhaltenen galvanischen Schichten und deren Füllverhalten in Leitbahnstrukturen. Der entwickelte ALD-Prozess besitzt darüber hinaus Potential zur Integration mit Kohlenstoffnanoröhren.

In this work, an approach for copper atomic layer deposition (ALD) via reduction of CuxO films was investigated regarding applications in ULSI interconnects, like Cu seed layers directly grown on diffusion barriers (e. g. TaN) or possible liner materials (e. g. Ru or Ni) as well as non-ferromagnetic spacer layers between ferromagnetic films in GMR sensor elements, like Ni or Co. The thermal CuxO ALD process is based on the Cu (I) β-diketonate precursor [(nBu3P)2Cu(acac)] and a mixture of water vapor and oxygen ("wet O2") as co-reactant at temperatures between 100 and 130 °C. Highly efficient conversions of the CuxO to metallic Cu films are realized by a vapor phase treatment with formic acid (HCOOH), especially on Ru substrates. Electrochemical deposition (ECD) experiments on Cu ALD seed / Ru liner stacks in typical interconnect patterns are showing nearly perfectly filling behavior. For improving the HCOOH reduction on arbitrary substrates, a catalytic amount of Ru was successful introduced into the CuxO films during the ALD with a precursor mixture of the Cu (I) β-diketonate and an organometallic Ru precursor. Furthermore, molecular and atomic hydrogen were studied as promising alternative reducing agents.

The present thesis describes the synthesis and characterization of magnesium, copper, and iron complexes and their application in the MOCVD (Metal-Organic Chemical Vapor Deposition) process, as well as the synthesis and characterization of yttrium and gadolinium complexes and their use as spin-coating precursors for metal oxide thin layer formation. The objective of this scientific work is the development of the family of bis(β-ketoiminato) magnesium(II) complexes and a series of heteroleptic β-ketoiminato copper(II) precursors for the formation of magnesium oxide and copper/copper oxide layers by using the MOCVD process. Modifications of the ketoiminato ligands affect the physical and chemical properties of the respective complexes. Another central theme of this work is the development of β-diketonato iron(III) complexes for the deposition of carbon-free gamma- and alpha-Fe2O3 layers via MOCVD. The thermal behavior and vapor pressure of the precursors could be influenced by the variation of the β-diketonate ligands. In addition, the synthesis and characterization of yttrium and gadolinium β-diketonates and their use as spin-coating precursors are described. Field-effect transistors were successfully fabricated by the deposition of carbon nanotubes on top of the Y2O3 films.

All cells maintain essential metal nutrients at optimal levels by metal homeostasis. P-type ATPases, a crucial superfamily of integral membrane proteins, are involved in the active transport of metal ions across biological membranes driven by the motive force of ATP- hydrolysis. The PIB-type ATPase subfamily, also called CPx-ATPases, fulfills a key role in heavy metal homoeostasis among the most widespread species from bacteria to human. In humans, the defect in copper transporters is the direct cause of severe neurological and hepatic disorders such as Wilson and Menkes diseases, therefore, understanding the molecular function of these pumps is of paramount importance in human health. Cu+-ATPases have two transmembrane metal binding sites (TM-MBS) and three cytosolic domains, namely the actuator (A-domain) and phosphorylation and nucleotide-binding domain (PN), and regulatory N-terminal heavy metal binding domain (HMBD). Here, we have studied the Legionella pneumophila CopA (LpCopA) and its isolated cytosolic domains to improve our understanding of the functional interaction of the protein domains during metal transport relate this to the known structure of this ATPase. To elucidate how cytosolic ligands (Cu+ and nucleotide) stimulate the interactions among the cytosolic domains and may transmit conformational changes to the TM-MBS, the interactions among recombinant isolated cytosolic domains were first examined biochemically by co-purification and spectroscopically by circular dichroism, time-resolved fluorescence and site-directed fluorescent labeling assays. The Cu+-dependent interaction between the A-domain and HMBD has been postulated as a mechanism for activating the ATPase cycle. This question was addressed here by studying copper-dependent interactions between the isolated expressed domains. Spectroscopic evidence is provided that an HMBD-A complex is formed in the presence of Cu+ which binds with 100-200 nM affinity to the recombinant HMBD. In contrast, the A-domain interacts with the PN domain in a nucleotide-dependent fashion. This molecular recognition is required for the dephosphorylation step in the catalytic cycle. The interaction was investigated in more detail by the use of a decameric peptide derived from the PN-binding interface of the A-domain and carrying the conserved TGE-motif involved in dephosphorylation. Its binding to the isolated PN domain in a weakly nucleotide-dependent manner, is demonstrated here by stopped-flow fluorescence spectroscopy. Several ATPase assays were modified to assess the functionality of the PN-domain and full length LpCopA. The peptide was found to reduce the catalytic turnover of full length LpCopA. This agrees with the expected slowing down of the reformation of the PN-A-domain interaction since the peptide occupies their binding interface. Thus, the synthetic peptide provides a means to study specifically the influence of PN-A-domain interactions on the structure and function of LpCopA. This was done by time-correlated single photon counting (TCSPC) method. The time-dependent Stokes shift of the environmentally sensitive fluorophore BADAN which was covalently attached to the conserved CPC-motif in the TM-MBS was measured. The data indicate that the interior of the ATPase is hydrated and the mobility of the intra-protein water varies from high to low at C382 at the “luminal side” and C384 at the “cytosolic side” of the TM-MBS, respectively. This finding is consistent with the recent MD simulation of LpCopA, bringing the first experimental evidence on a luminal-open conformation of E2~P state. The A-domain-derived decapeptide, although binding to the cytosolic head piece, induces structural changes also at the TM-MBS. The peptide-stabilized state (with a disrupted PN-A interface) renders the C384 environment more hydrophobic as evidenced by TCSPC. Taken together, the data from cytosolic domain interactions, ATPase assays and of time-dependent Stoke shift analyses of BADAN-labeled LpCopA reveal the presence of hydrated intramembraneous sites whose degree of hydration is regulated by the rearrangement of cytosolic domains, particularly during the association and dissociation of the PN-A domains. Copper affects this arrangement by inducing the linkage of the A-domain to the HMBD. The latter appears to play not only an autoinhibitory but also a chaperone-like role in transferring Cu+ to the TM-MBS during catalytic turnover.