For mobile electronics such as Smartphones, Smartcards or wearable devices there is a trend towards an increasing functionality as well as miniaturisation. In this development Micro Electro- Mechanical Systems (MEMS) are an important key element for the realisation of functions such as motion detection. The specifications given by such devices together with the limited available space demand advanced packaging technologies. The 3D-Wafer Level Packaging (3D-WLP) enables one solution for a miniaturised MEMS package by using techniques such as Wafer Level Bonding (WLB) and Through Silicon Vias (TSV). This technology increases the effective area of the MEMS device by elimination dead space, which is typically required for other approaches based on wire bond assembly. Within this thesis, different TSV technology concepts with respect to a 3D-WLP for MEMS have been developed. Thereby, the focus was on a copper based technology as well as on two major TSV implementation methods. This comprises a Via Middle approach based on the separated TSV fabrication in the cap wafer as well as a Via Last approach with a TSV implementation in either the MEMS or cap wafer, respectively. For each option with its particular challenges, corresponding process modules have been developed. In the Via Middle approach, the wafer-related etch rate homogeneity determines the TSV reveal from the wafer backside Here, a reduction of the TSV depth down to 80 μm is favourable as long as the desired Cu-thermo-compression bonding (Cu-TCB) is performed before the thinning. For the TSV metallisation, a Cu electrochemical deposition method was developed, which allows the deposition of one redistribution layer as well as the bonding patterns for Cu-TCB at the same time. In the Via Last approach, the TSV isolation represents one challenge. Chemical Vapour Deposition processes have been investigated, for which a combination of PE-TEOS and SA-TEOS as well as a Parylene deposition yield the most promising results. Moreover, a method for the realisation of a suitable bonding surface for the Silicon Direct Bonding method has been developed, which does not require any wet pre treatment of the fabricated MEMS patterns. A functional MEMS acceleration sensor as well as Dummy devices serve as demonstrators for the overall integration technology as well as for the characterisation of electrical parameters. / Im Bereich mobiler Elektronik, wie z.B. bei Smartphones, Smartcards oder in Kleidung integrierten Geräten ist ein Trend zu erkennen hinsichtlich steigender Funktionalität und Miniaturisierung. Bei dieser Entwicklung spielen Mikroelektromechanische Systeme (MEMS) eine entscheidende Rolle zur Realisierung neuer Funktionen, wie z.B. der Bewegungsdetektion. Die Anforderungen derartiger Bauteile zusammen mit dem begrenzten zur Verfügung stehenden Platz erfordern neuartige Technologien für die Aufbau- und Verbindungstechnick (engl. Packaging) der Bauteile. Das 3D-Wafer Level Packaging (3D-WLP) ermöglicht eine Lösung für eine miniaturisierte MEMS-Bauform unter Nutzung von Techniken wie dem Waferlevelbonden (WLB) und den Siliziumdurchkontaktierungen (TSV von engl. Through Silicon Via). Diese Technologie erhöht die effektive aktive Fläche des MEMS Bauteils durch die Reduzierung von Toträumen, welche für andere Ansätze wie der Drahtbond-Montage üblich sind. In der vorliegenden Arbeit wurden verschiedene Technologiekonzepte für den Aufbau von 3D-WLP für MEMS erarbeitet. Dabei lag der Fokus auf einer Kupfer-basierten Technologie sowie auf zwei prinzipiellen Varianten für die TSV-Implementierung. Dies umfasst den Via Middle Ansatz, welcher auf der TSV Herstellung auf einem separaten Kappenwafer beruht, sowie den Via Last Ansatz mit einer TSV Herstellung entweder im MEMS-Wafer oder im Kappenwafer. Für beide Varianten mit individuellen Herausforderungen wurden entsprechende Prozessmodule entwickelt. Beim Via Middle Ansatz ist die Wafer-bezogene Ätzratenhomogenität des Siliziumtiefenätzen entscheidend für das spätere Freilegen der TSVs von der Rückseite. Hier hat sich eine Reduzierung der TSV-Tiefe auf bis zu 80 μm vorteilhaft erwiesen insofern, das Kupfer-Thermokompressionsbonden (Cu-TKB) vor dem Abdünnen erfolgt. Zur Metallisierung der TSVs wurde ein Cu Galvanikprozess erarbeitet, welcher es ermöglicht gleichzeitig eine Umverdrahtungsebene sowie die Bondstrukturen für das Cu-TKB zu erzeugen. Beim Via Last Ansatz ist die TSV Isolation eine Herausforderung. Es wurden CVD (Chemische Dampfphasenabscheidung) Prozesse untersucht, wobei eine Kombination aus PE-TEOS und SA-TEOS sowie eine Parylene Beschichtung erfolgversprechende Ergebnisse liefern. Des Weiteren wurde eine Methode zur Erzeugung bondfähiger Oberflächen für das Siliziumdirektbonden erarbeitet, welche eine Nass-Vorbehandlung des MEMS umgeht. Ein realer MEMS-Beschleunigungssensor sowie Testaufbauten dienen zur Demonstration der Gesamtintegrationstechnologie sowie zur Charakterisierung elektrischer Parameter.

For mobile electronics such as Smartphones, Smartcards or wearable devices there is a trend towards an increasing functionality as well as miniaturisation. In this development Micro Electro- Mechanical Systems (MEMS) are an important key element for the realisation of functions such as motion detection. The specifications given by such devices together with the limited available space demand advanced packaging technologies. The 3D-Wafer Level Packaging (3D-WLP) enables one solution for a miniaturised MEMS package by using techniques such as Wafer Level Bonding (WLB) and Through Silicon Vias (TSV). This technology increases the effective area of the MEMS device by elimination dead space, which is typically required for other approaches based on wire bond assembly. Within this thesis, different TSV technology concepts with respect to a 3D-WLP for MEMS have been developed. Thereby, the focus was on a copper based technology as well as on two major TSV implementation methods. This comprises a Via Middle approach based on the separated TSV fabrication in the cap wafer as well as a Via Last approach with a TSV implementation in either the MEMS or cap wafer, respectively. For each option with its particular challenges, corresponding process modules have been developed. In the Via Middle approach, the wafer-related etch rate homogeneity determines the TSV reveal from the wafer backside Here, a reduction of the TSV depth down to 80 μm is favourable as long as the desired Cu-thermo-compression bonding (Cu-TCB) is performed before the thinning. For the TSV metallisation, a Cu electrochemical deposition method was developed, which allows the deposition of one redistribution layer as well as the bonding patterns for Cu-TCB at the same time. In the Via Last approach, the TSV isolation represents one challenge. Chemical Vapour Deposition processes have been investigated, for which a combination of PE-TEOS and SA-TEOS as well as a Parylene deposition yield the most promising results. Moreover, a method for the realisation of a suitable bonding surface for the Silicon Direct Bonding method has been developed, which does not require any wet pre treatment of the fabricated MEMS patterns. A functional MEMS acceleration sensor as well as Dummy devices serve as demonstrators for the overall integration technology as well as for the characterisation of electrical parameters.:Bibliographische Beschreibung 3 Vorwort 13 List of symbols and abbreviations 15 1 Introduction 23 2 Fundamentals on MEMS and TSV based 3D integration 25 2.1 Micro Electro-Mechanical systems 25 2.1.1 Basic Definition 25 2.1.2 Silicon technologies for MEMS 26 2.1.3 MEMS packaging 29 2.2 3D integration based on TSVs 33 2.2.1 Overview 33 2.2.2 Basic processes for TSVs 34 2.2.3 Stacking and Bonding 47 2.2.4 Wafer thinning 48 2.3 TSV based MEMS packaging 50 2.3.1 MEMS-TSVs 50 2.3.2 3D-WLP for MEMS 52 3 Technology development for a 3D-WLP based MEMS 57 3.1 Target integration approach for 3D-WLP based MEMS 57 3.1.1 MEMS modules using 3D-WLP based MEMS 57 3.1.2 Integration concepts 58 3.2 Objective and requirements for the proposed 3D-WLP of MEMS 60 3.2.1 Boundary conditions 60 3.2.2 Technology concepts 63 3.3 Selected approaches for TSV implementation in MEMS 64 3.3.1 Via Last Technology 64 3.3.2 Via Middle technology 69 4 Development of process modules 75 4.1 Characterisation 75 4.2 TSV related etch processes 77 4.2.1 Equipment 77 4.2.2 Deep silicon etching 78 4.2.3 Etching of the buried dielectric layer 84 4.2.4 Patterning of TSV isolation liner – spacer etching 90 4.2.5 Summary 92 4.3 TSV isolation 93 4.3.1 Principle considerations 93 4.3.2 Experiment 95 4.3.3 Results 97 4.3.4 Summary 102 4.4 Metallisation of TSV and RDL 103 4.4.1 Plating base and experimental setup 103 4.4.2 Investigations related to the ECD process 106 4.4.3 Pattern plating 117 4.4.4 Summary 123 4.5 Wafer Level Bonding 124 4.5.1 Silicon direct bonding 124 4.5.2 Thermo-compression bonding by using ECD copper 128 4.5.3 Summary 134 4.6 Wafer thinning and TSV back side reveal 134 4.6.1 Thinning processes 134 4.6.2 TSV reveal processes 136 4.6.3 Summary 145 4.7 Under bump metallisation and solder bumps 146 5 Demonstrator design, fabrication and characterisation 149 5.1 Single wafer demonstrator for electrical test 149 5.1.1 Demonstrator design and test structure layout 149 5.1.2 Demonstrator fabrication 150 5.1.3 Electrical measurement 151 5.1.4 Summary 153 5.2 Via Last based TSV fabrication in the MEMS device wafer 153 5.2.1 Layout of the MEMS device with TSVs 153 5.2.2 Fabrication of TSVs and wafer thinning 154 5.2.3 Characterisation of the fabricated device 155 5.2.4 Summary 156 5.3 Via Last based cap-TSV for very thin MEMS devices 157 5.3.1 Design 157 5.3.2 Fabrication 158 5.3.3 Characterisation 161 5.3.4 Summary 162 5.4 Via Middle approach based on thinning after bonding 163 5.4.1 Design 163 5.4.2 Results and characterisation 164 5.4.3 Summary 166 6 Conclusion and outlook 167 Appendix A: Typical requirements on a MEMS package and its functions 171 Appendix B: Classification of packaging and system integration techniques 173 B.1 Packaging of electronic devices in general 173 B.2 Single Chip Packages 174 B.3 System integration 175 B.4 3D integration based on TSVs 180 Bibliography 183 List of figures 193 List of tables 199 Versicherung 201 Theses 203 Curriculum vitae 205 Own publications 207 / Im Bereich mobiler Elektronik, wie z.B. bei Smartphones, Smartcards oder in Kleidung integrierten Geräten ist ein Trend zu erkennen hinsichtlich steigender Funktionalität und Miniaturisierung. Bei dieser Entwicklung spielen Mikroelektromechanische Systeme (MEMS) eine entscheidende Rolle zur Realisierung neuer Funktionen, wie z.B. der Bewegungsdetektion. Die Anforderungen derartiger Bauteile zusammen mit dem begrenzten zur Verfügung stehenden Platz erfordern neuartige Technologien für die Aufbau- und Verbindungstechnick (engl. Packaging) der Bauteile. Das 3D-Wafer Level Packaging (3D-WLP) ermöglicht eine Lösung für eine miniaturisierte MEMS-Bauform unter Nutzung von Techniken wie dem Waferlevelbonden (WLB) und den Siliziumdurchkontaktierungen (TSV von engl. Through Silicon Via). Diese Technologie erhöht die effektive aktive Fläche des MEMS Bauteils durch die Reduzierung von Toträumen, welche für andere Ansätze wie der Drahtbond-Montage üblich sind. In der vorliegenden Arbeit wurden verschiedene Technologiekonzepte für den Aufbau von 3D-WLP für MEMS erarbeitet. Dabei lag der Fokus auf einer Kupfer-basierten Technologie sowie auf zwei prinzipiellen Varianten für die TSV-Implementierung. Dies umfasst den Via Middle Ansatz, welcher auf der TSV Herstellung auf einem separaten Kappenwafer beruht, sowie den Via Last Ansatz mit einer TSV Herstellung entweder im MEMS-Wafer oder im Kappenwafer. Für beide Varianten mit individuellen Herausforderungen wurden entsprechende Prozessmodule entwickelt. Beim Via Middle Ansatz ist die Wafer-bezogene Ätzratenhomogenität des Siliziumtiefenätzen entscheidend für das spätere Freilegen der TSVs von der Rückseite. Hier hat sich eine Reduzierung der TSV-Tiefe auf bis zu 80 μm vorteilhaft erwiesen insofern, das Kupfer-Thermokompressionsbonden (Cu-TKB) vor dem Abdünnen erfolgt. Zur Metallisierung der TSVs wurde ein Cu Galvanikprozess erarbeitet, welcher es ermöglicht gleichzeitig eine Umverdrahtungsebene sowie die Bondstrukturen für das Cu-TKB zu erzeugen. Beim Via Last Ansatz ist die TSV Isolation eine Herausforderung. Es wurden CVD (Chemische Dampfphasenabscheidung) Prozesse untersucht, wobei eine Kombination aus PE-TEOS und SA-TEOS sowie eine Parylene Beschichtung erfolgversprechende Ergebnisse liefern. Des Weiteren wurde eine Methode zur Erzeugung bondfähiger Oberflächen für das Siliziumdirektbonden erarbeitet, welche eine Nass-Vorbehandlung des MEMS umgeht. Ein realer MEMS-Beschleunigungssensor sowie Testaufbauten dienen zur Demonstration der Gesamtintegrationstechnologie sowie zur Charakterisierung elektrischer Parameter.:Bibliographische Beschreibung 3 Vorwort 13 List of symbols and abbreviations 15 1 Introduction 23 2 Fundamentals on MEMS and TSV based 3D integration 25 2.1 Micro Electro-Mechanical systems 25 2.1.1 Basic Definition 25 2.1.2 Silicon technologies for MEMS 26 2.1.3 MEMS packaging 29 2.2 3D integration based on TSVs 33 2.2.1 Overview 33 2.2.2 Basic processes for TSVs 34 2.2.3 Stacking and Bonding 47 2.2.4 Wafer thinning 48 2.3 TSV based MEMS packaging 50 2.3.1 MEMS-TSVs 50 2.3.2 3D-WLP for MEMS 52 3 Technology development for a 3D-WLP based MEMS 57 3.1 Target integration approach for 3D-WLP based MEMS 57 3.1.1 MEMS modules using 3D-WLP based MEMS 57 3.1.2 Integration concepts 58 3.2 Objective and requirements for the proposed 3D-WLP of MEMS 60 3.2.1 Boundary conditions 60 3.2.2 Technology concepts 63 3.3 Selected approaches for TSV implementation in MEMS 64 3.3.1 Via Last Technology 64 3.3.2 Via Middle technology 69 4 Development of process modules 75 4.1 Characterisation 75 4.2 TSV related etch processes 77 4.2.1 Equipment 77 4.2.2 Deep silicon etching 78 4.2.3 Etching of the buried dielectric layer 84 4.2.4 Patterning of TSV isolation liner – spacer etching 90 4.2.5 Summary 92 4.3 TSV isolation 93 4.3.1 Principle considerations 93 4.3.2 Experiment 95 4.3.3 Results 97 4.3.4 Summary 102 4.4 Metallisation of TSV and RDL 103 4.4.1 Plating base and experimental setup 103 4.4.2 Investigations related to the ECD process 106 4.4.3 Pattern plating 117 4.4.4 Summary 123 4.5 Wafer Level Bonding 124 4.5.1 Silicon direct bonding 124 4.5.2 Thermo-compression bonding by using ECD copper 128 4.5.3 Summary 134 4.6 Wafer thinning and TSV back side reveal 134 4.6.1 Thinning processes 134 4.6.2 TSV reveal processes 136 4.6.3 Summary 145 4.7 Under bump metallisation and solder bumps 146 5 Demonstrator design, fabrication and characterisation 149 5.1 Single wafer demonstrator for electrical test 149 5.1.1 Demonstrator design and test structure layout 149 5.1.2 Demonstrator fabrication 150 5.1.3 Electrical measurement 151 5.1.4 Summary 153 5.2 Via Last based TSV fabrication in the MEMS device wafer 153 5.2.1 Layout of the MEMS device with TSVs 153 5.2.2 Fabrication of TSVs and wafer thinning 154 5.2.3 Characterisation of the fabricated device 155 5.2.4 Summary 156 5.3 Via Last based cap-TSV for very thin MEMS devices 157 5.3.1 Design 157 5.3.2 Fabrication 158 5.3.3 Characterisation 161 5.3.4 Summary 162 5.4 Via Middle approach based on thinning after bonding 163 5.4.1 Design 163 5.4.2 Results and characterisation 164 5.4.3 Summary 166 6 Conclusion and outlook 167 Appendix A: Typical requirements on a MEMS package and its functions 171 Appendix B: Classification of packaging and system integration techniques 173 B.1 Packaging of electronic devices in general 173 B.2 Single Chip Packages 174 B.3 System integration 175 B.4 3D integration based on TSVs 180 Bibliography 183 List of figures 193 List of tables 199 Versicherung 201 Theses 203 Curriculum vitae 205 Own publications 207

Globally, the justice system has set up courts to respond to complaints of a criminal and civil nature. Courts also respond to complaints which require swift relief by way of shortened procedures, in the form of motion proceedings. In all these complaints, courts have to respond in a manner that leaves litigants with a feeling of satisfaction that justice has been done. To the end of ensuring that there is legal certainty, justice systems in all jurisdictions have established a hierarchy of courts, with lower courts being bound by the decisions of higher courts in their jurisdiction. There has been no problem in the application of this principle called stare decisis, or judicial precedent, in disputes of law. However, in disputes of constitutional interpretation, courts have demonstrated a marked shift from observing the rule of judicial precedent. The disregard for this rule manifests itself particularly in the adjudication of cases surrounded by controversy. It is argued herein that constitutional interpretation is no different from legal interpretation, in that the rule of judicial precedent which characterises court decisions in legal disputes, should characterise court decisions in constitutional interpretation disputes. The Constitutional Court of South Africa itself, though it is the highest arbiter in constitutional matters, is bound by its own previous decisions, unless its previous decisions have become manifestly wrong. Three constitutional rights are analysed. The right to life in its three manifestations, namely, the right to life of the unborn child, the right to life of the convicted criminal not to be hanged, and the right of the terminally ill to continue living by receiving medical care at state expense. The other two rights are the right to privacy, and the right to culture. The right to privacy is the right that has been claimed in political controversies. In isolated instances, specifically mentioned herein, the Constitutional Assembly and the drafters of the Constitution have also contributed to the resultant inconsistency in constitutional interpretation. This is especially so with regard to the right to practise one‘s culture. / Constitutional, International & Indigenous Law / LL.D.

The last Supper Jesus had with his disciples on the night before he died on the cross is the foundation of a major liturgical celebration in the Catholic Church called 'the Eucharist'. One of the major designations of the Eucharist is that it is a sacrifice. The starting point of this work is that the sacrificial character of the Eucharist is not as meaningful and relevant for Xhosa people as it should be. The way forward is to study the Eucharistic and Xhosa sacrifices, compare them and suggest ways of rendering the Eucharistic sacrifice meaningful and relevant to Xhosa the people. Although not conclusive, the New Testament gives a strong foundation for the sacrificial understanding of the Eucharist. The Eucharist, as interpreted through the Last Supper accounts, covers all the conventional intentions of sacrifice, i.e. propitiation, communion, thanksgiving and mutual responsibility. The Fathers of the Church affirm the sacrificial character of the Eucharist with varying emphases, but taken together, their understanding shows development of thought and complementarity of themes. In the Middle Ages the most pronounced intention of the . Eucharistic sacrifice is propitiation and post Tridentine theological reflection is informed by this mentality. According to modem and contemporary thought, Christ's death on the cross, which is sacrarnentally represented in the Eucharist, is not an act performed on our behalf to appease an angry God but God's act of love towards us. The emphasis is on self-offering to God as exemplified by Christ. The Xhosa people still have regard for sacrificial rituals, but modernity has modified and sometimes changed their understanding and practice of sacrifice. The principle of God's universal salvific will and the doctrine of incarnation provide theological grounds for inculturating the Eucharist. Thus the inclusion of ancestors and use of cultural symbols in the celebration of the Eucharist may render it meaningful to Xhosa people. Relating the Eucharist to Xhosa culture will revitalise the communion element in Eucharistic sacrifice, which element has been lost sight of through the centuries. Eucharistic sacrifice in its turn will help Xhosa Catholics to have a deepened understanding of sacrifice that extends beyond performance of rituals to include self-giving. / Philosophy, Practical & Systematic Theology / D.Th.(Systematic Theology)

<p>Detta examensarbete har utförts på Fläktwoods AB i Växjö, som producerar stora axialfläktar för olika industriapplikationer. Syftet är att öka kunskapen om fettsmorda axiella kullager genom FE analyser.</p><p>Projektet har genomförts i fem delsteg för att avgöra påverkan av en eller några få parametrar i taget. De studerade parametrarna är: elementstorlek, kontaktstyvhet, last, lagergeometri (dvs. oskulation), ickelinjär geometri och ickelinjära materialegenskaper (dvs. plasticitet).</p><p>Slutsatsen är att elementstorleken bör väljas fint nog för att ge ett jämnt resultat men grovt nog för att beräkningstiden skal vara rimlig. Kontaktstyvheten har inte stor, men tydlig, inverkan på kontakttrycket och penetrationen. Förändringar av oskulationen leder till förändringar i kontaktellipsens form medan olika laster inte påverkar formen på ellipsen, utan snarare storleken. När det handlar om plasticitet är sträckgränsen den viktigaste faktorn att beakta.</p> / <p>This thesis project was carried out at Fläktwoods AB in Växjö who produces large axial fans for different industry applications. The purpose is to increase the knowledge of grease lubricated axial ball bearings through FE analyses.</p><p>The project was executed into five sub steps to determine the influence of one or few parameters at a time. The studied parameters are: mesh density, contact stiffness, load, bearing geometry (i.e. osculation), geometrical nonlinearity and material nonlinearity (i.e. plasticity).</p><p>It is concluded that the mesh density should be selected fine enough to give a smooth result but course enough to give a reasonable calculation time. The contact stiffness has not a major, but a clear, impact on the contact pressure and penetration. Changes of the osculation lead to changes of the contact ellipse shape and applying different load level does not affect the shape of the ellipse but rather the size. When dealing with plasticity the yield strength is the most important factor to take in consideration.</p>

This project highlights aspects of Hester Piozzi’s approach to biography in Anecdotes of the Late Samuel Johnson LL. D. During the Last Twenty Years of His Life in order to analyze her use of accumulated cultural and social capital. I highlight similarities between Anecdotes and Samuel Johnson’s model for biography given in Rambler #60 and show how Piozzi adheres to his advice as she characterizes Johnson as a pious genius, intolerantly opinionated, and self-indulgent, yet unwilling to accept those qualities in others. I analyze how her editorial choices characterize her as a reliable source of information and a blameless victim of Johnson’s need for attention. This study proves Anecdotes and the corresponding entries in Thraliana are important because her deliberate revisioning of her history speaks to her ability to manipulate social expectations in order to revive her literary career and actively contribute to eighteenth-century British economy, culture, and society.

Diploma thesis Power of the First Generations of the Ronov Noble Family and Their Position Within Czech Mediaeval Society was dealing with the position and power of the first three generations of the representatives of Ronov noblemen in the direct line towards Hynek from Dubá. In the prosopographical part of the thesis the lines of testimony were analysed and these proved clearly that the maximum of their court career was occurring during the reign of Wenceslaus the First. This maximum is also reflected in the other part of the thesis - which is the analysis of possession- holding. At the age of Wenceslaus the First Ronov noblemen built up a vast area of their particular possessions in Northern Bohemia and gradually they were developing colonisation of this region. Even though Ronov noble family did not take up any posts at the court, the exception is the position of Budysin administrator, they created a very tight connection to Premyslid kings due to the common childhood with Wenceslaus the First and they also supported him politically and also militarily in his inner and foreign policy. After the death of Castoslov from Zitava the position of power in the direct family line began to deteriorate, the peak of power was now for Lichtenburg family. The minimum of the court career comes after their left the...

The aim of this diploma thesis is to explore the possible influence of the idea of the end of the world on the process of conquest and colonization of America. The author tries to answer this question through the study of selected images of the Last Judgment. The purpose aim of this thesis is not to describe or stylistically classify given works of art, but to interpret them using the methodology based on the semiotic conception of culture as public symbolical system that allows to interpret the culture and its expressions in their social connections. As the topic of this work is related to the question of death and finality, the chosen works of art are interpreted also in connection with A. van Gennep's idea of "rites of passage", which enables to pass from one life stage to another. The main source for analysis is the photographic material, which illustrates images and reliefs of the Last Judgment in their natural environment.

No description available.

<p>The rise of technologies and the Internet have provided opportunities to connect logistics demand and supply using the crowd. In this system, named crowd-shipping (CS), a requester doing the shipping selects a courier via a platform. In reality, the idea of CS has been explored by many firms over the last several years. However, there is a lack of fundamental understanding of the issues related to: (1) the markets that are likely to be influenced by CS; (2) the considerations that govern the success of this system; and the (3) the impacts of CS and its design.</p><p><br></p> <p>To address these issues, there is a need of understanding CS system's stakeholders, such as requesters' (i.e. senders') and potential couriers' (i.e. driver-partners') behaviors as well as operations and management of CS firms. This research will address these gaps by conducting a survey to understand driver-partners' behaviors and requesters' behaviors given the CS services availability in the logistics market. Then, pricing and compensation strategies are designed and modeled based on behavior rules of supply and demand generations as well as various CS market penetrations. As such, this research addresses the CS industry in a triad of supply, demand, and operations and management.</p><p><br></p> <p>This research uses advanced econometrics, statistics analysis, mixed integer optimization, and data science techniques to analyze data and generate insights. The contributions of this research are to identify the contributing factors that impact the emerging logistics service. This research also reveals factors that influence the current and future shipping behaviors of requesters, as well as influencing factors of the individuals' willingness to work as driver-partners. The integrated matching and routing models have been developed to examine different pricing and compensation strategies under several market penetration scenarios. `Individual' price and compensation have found to provide the highest profit for CS platform providers.</p><p><br></p> <p>This research provides meaningful knowledge for stakeholders, especially for the CS firms to develop business strategies. Several remarkable benefits that CS firms can obtain include: focusing on some specific population groups to recruit driver-partners (e.g. people with children, middle-aged people having lower incomes, or no car ownership); addressing certain market segments to promote CS services (e.g. tight-window delivery packages, peripheral products, or personal health and medicine items); implementing `individual' or `flatted' pricing and compensation strategies depending on the time of the day, the day of the week, or the market penetration; and improving platform features to incorporate requesters' and driver-partners' expectations.</p>