A wide variety of novel complementary-metal-oxide-semiconductor (CMOS) devices that are strong contenders for future high-speed and low-noise RF circuits have been evaluated by means of static electrical measurements and low-frequency noise characterizations in this thesis. These novel field-effect transistors (FETs) include (i) compressively strained SiGe channel pMOSFETs, (ii) tensile strained Si nMOSFETs, (iii) MOSFETs with high-k gate dielectrics, (iv) metal gate and (v) silicon-on-insulator (SOI) devices. The low-frequency noise was comprehensively characterized for different types of operating conditions where the gate and bulk terminal voltages were varied. Detailed studies were made of the relationship between the 1/f noise and the device architecture, strain, device geometry, location of the conduction path, surface cleaning, gate oxide charges and traps, water vapour annealing, carrier mobility and other technological factors. The locations of the dominant noise sources as well as their physical mechanisms were investigated. Model parameters and physical properties were extracted and compared. Several important new insights and refinements of the existing 1/f noise theories and models were also suggested and analyzed. The continuing trend of miniaturizing device sizes and building devices with more advanced architectures and complex materials can lead to escalating 1/f noise levels, which degrades the signal-to-noise (SNR) ratio in electronic circuits. For example, the 1/f noise of some critical transistors in a radio receiver may ultimately limit the information capacity of the communication system. Therefore, analyzing electronic devices in order to control and find ways to diminish the 1/f noise is a very important and challenging research subject. We present compelling evidence that the 1/f noise is affected by the distance of the conduction channel from the gate oxide/semiconductor substrate interface, or alternatively the vertical electric field pushing the carriers towards the gate oxide. The location of the conduction channel can be varied by the voltage on the bulk and gate terminals as well by device engineering. Devices with a buried channel architecture such as buried SiGe channel pMOSFETs and accumulation mode MOSFETs on SOI show significantly reduced 1/f noise. The same observation is made when the substrate/source junction is forward biased which decreases the vertical electric field in the channel and increases the inversion layer separation from the gate oxide interface. A 1/f noise model based on mobility fluctuations originating from the scattering of electrons with phonons or surface roughness was proposed. Materials with a high dielectric constant (high-k) is necessary to replace the conventional SiO2 as gate dielectrics in the future in order to maintain a low leakage current at the same time as the capacitance of the gate dielectrics is scaled up. In this work, we have made some of the very first examinations of 1/f noise in MOSFETs with high-k structures composed by layers of HfO2, HfAlOx and Al2O3. The 1/f noise level was found to be elevated (up to 3 orders of magnitude) in the MOSFETs with high-k gate dielectrics compared to the reference devices with SiO2. The reason behind the higher 1/f noise is a high density of traps in the high-k stacks and increased mobility fluctuation noise, the latter possibly due to noise generation in the electron-phonon scattering that originates from remote phonon modes in the high-k. The combination of a TiN metal gate, HfAlOx and a compressively strained surface SiGe channel was found to be superior in terms of both high mobility and low 1/f noise. / QC 20100928

During the boreal cool season, regional climate in the United States is strongly impacted by extreme temperature regimes (ETRs), including both cold air outbreaks (CAOs) and warm waves (WWs), which have significant impacts on energy consumption, agriculture, as well as the human population. Using NCEP/NCAR and MERRA reanalysis data, the statistical characteristics of ETRs over three distinct geographical regions are studied: the Midwest (MW), Northeast Megalopolis (NE), and Deep South (SE). The regional long-term variability in the frequency and amplitude of ETRs is examined, and the modulation of these ETRs by low frequency modes is quantified. ETR behavior is characterized using three different metrics applied to both T and Twc: 1) the number of extreme cold/warm days, 2) a seasonal cumulative "impact factor", and 3) a peak normalized anomaly value. A trend analysis reveals a significant downward trend in SE WW events from 1949-2011. Otherwise, no significant trends are found for ETRs in any of the other regions. Thus, these results indicate that there has not been any significant reduction in either the amplitude or frequency of CAOs over the United States during the period of analysis. In fact, for the SE region, the recent winters of 2009/2010 and 2010/2011 both rank among the top 5 in terms of CAO metrics. In addition, strong interannual variability in ETRs is evident from 1949-2011 in each region. Linear regression analysis is then used to determine the associations between ETR metrics and the seasonal mean state of several low frequency modes, and it is found that ETRs tend to be modulated by certain low frequency modes. For instance, in the SE region, there is a significant association between ETRs and the phase of the North Atlantic (or Arctic) Oscillation (NAO/AO), the Pacific North American (PNA) pattern (for WWs only), the Pacific Decadal Oscillation (PDO) and the El Niño-Southern Oscillation (for WWs only). Over the MW region, WWs are modulated by the NAO/AO and PNA patterns, while in the NE region, the AO, NAO (for WWs only) and PDO (for WWs only) are implicated. In addition, it is found that there is an asymmetry between the low frequency mode modulation of CAOs and WWs. Multiple linear regression analysis is then used to quantify the relative roles of the various low frequency modes in explaining interannual variability in ETR metrics, and reveals that various combinations of low frequency modes can explain anywhere between 10% and 50% of the variance in the ETR metrics.

No description available.

Raumens adaptacija įgyta po pirmo krūvio, vadinama pakartoto krūvio efektu (PKE). PKE aiškiai reiškiasi po ekscentrinių pratimų ir yra siejamas su raumens pažeida. Raumens pažeidos dydis priklauso nuo pradinio intensyvumo, kartojimų kiekio bei raumens ištempimo amplitudės. Nėra aišku, kaip skiriasi pakartotas krūvio efektas, atliekant didėjantį ir vienodą fizinį krūvį. Tyrimo hipotezė: antro krūvio metu padidinus krūvio intensyvumą ir raumens ištempimo amplitudę sumažės pakartotas krūvio efektas. Tyrimo tikslas – nustatyti ir palyginti PKE po vienodo ir didėjančio fizinio krūvio. Uždaviniai: 1. Palyginti PKE po šuolių nuo skirtingo aukščio pakylos; 2. Palyginti PKE po šuolių su skirtinga raumens ištempimo amplitude. Praktinė darbo reikšmė: aiškesnis pakartoto krūvio efekto suvokimas gali padėti pasirinkti teisingą krūvio strategiją saugantis nuo raumenų pažeidos. Metodika: Pirmo tyrimo metu, pirma tiriamųjų grupė, šuolius atliko nuo didėjančio aukščio pakylos, pirmo krūvio metu buvo 30 cm, o antro - 60 cm aukščio pakylos. Kita tiriamųjų grupė šuolius atliko nuo vienodo 60 cm aukščio pakylos. Antro tyrimo metu, pirma tiriamųjų grupė šuolius atliko su didėjančia raumens ištempimo amplitude, pirmo krūvio metu 120º, antro - 90º kampu per kelio sąnarį. Kita grupė pirmo ir antro krūvių metu šuolius atliko su vienoda ištempimo amplitude - 90º per kelio sąnarį. Tyrimuose dalyvavo sveiki, aktyviai nesportuojantys vyrai (n=11) (amžius 19,5±1,7; ūgis 185,2±5,1 cm.; kūno masė 77,3±7... [toliau žr. visą tekstą] / Muscle’s adaptation gained after first workload is called repeated bout effect (RBF). RBF is clearly noticed after eccentric exercise and is associated with muscle damage. Muscle damage’s severity depends on the primary intensity and the extension of muscle’s amplitude. It is not clear how repeated bout effect changes performing enhanced and stable physical workload. Hypothesis. The repeated bout effect will reduce after enhancing the level of workload and the extension of muscle’s amplitude. Aim. To investigate and compare repeated bout effect after stable and enhanced physical workload. Objectives: 1. To compare RWE after jumps from different hight platforms. 2. To collate RWE with different muscles’ extension amplitude. Work significance to practice. The research results may help in choosing the right workload strategy in order to avoid muscles damage. Methods. During the first research, the first participants performed jumps from ascending height platform. During the first exercise platform was 30 cm, during the second – 60 cm height platform. Other participant group was performing jumps from stable, 60 cm height platform. During the second research, the first participant group performed jumps with enhanced muscle extension, first workload with 120°, second – 90° degrees in knee joint extension. Other group during first and second workload were performing jumps with equal – 90° degrees extension amplitude in knee joint. Healthy and not actively sporting men (n=11... [to full text]

Les travaux de thèse, présentés dans ce manuscrit, portent sur la caractérisation et la modélisation des sources de bruit basse fréquence dans les transistors bipolaires à hétérojonction Si/SiGe:C issus des filières BiCMOS 130 et 55 nm utilisées pour la réalisation de circuits intégrés dédiés aux futures applications dans le domaine du THz. A partir des mesures réalisées en fonction de la polarisation, de paramètres géométriques (surface et périmètre d'émetteur principalement) et de la température, la composante de bruit en 1/f, associée aux fluctuations du courant de base, a été entièrement caractérisée et les sources de bruit associées localisées. Les paramètres du modèle compact SPICE ont été extraits et comparés avec ceux de la littérature. Pour la technologie BiCMOS 130 nm, la valeur obtenue pour la figure de mérite KB égale 6,8 10-11 µm² ce qui représente le meilleur résultat publié à ce jour, toutes filières de transistors bipolaires confondues. Réalisée sur une plaque entière, l'étude statistique de la dispersion du niveau de bruit en 1/f a permis d'étendre la modélisation compacte de type SPICE. Mesuré sur une large gamme de température, le niveau de bruit en 1/f n'a pas présenté de variation significative. Pour la première fois, une étude complète de la composante de bruit en 1/f associée aux fluctuations du courant de collecteur est présentée et les paramètres du modèle SPICE extraits. Concernant la caractérisation des composantes de génération-recombinaison (présence non systématique), une étude statistique a montré que les transistors de plus petites dimensions étaient les plus impactés. La comparaison entre les différentes technologies montre que ces composantes sont beaucoup plus présentes dans les technologies les moins matures. Quand ces composantes ont été associées à du bruit RTS, une méthode de caractérisation temporelle et fréquentielle a été mise en œuvre. Enfin, dans certains cas, une étude en basses températures a permis d'extraire les énergies d'activation des pièges responsables de ces composantes de génération-recombinaison. / The presented thesis work, in this manuscript, focuses on the characterization and modeling of the low frequency noise sources in heterojunction bipolar transistors Si/SiGe :C derived from 130 to 55 nm BiCMOS technology used in the production of integrated circuits dedicated for THz domain applications. From measurements versus bias, geometrical parameters (emitter area and perimeter) and temperature, the 1/f noise component, associated to the base current fluctuations, has been fully characterized and the associated sources have been localized. The SPICE compact model parameters have been extracted and compared with those of the literature. For the BiCMOS 130 nm technology, the obtained figure of merit value of 6,8 10-11 µm2 represents the best published result so far in all bipolar transistors. The dispersion study of the 1/f noise component, performed over a complete wafer, allowed us to extend the SPICE type compact modeling. Measured over a large temperature range, the 1/f noise did not show any variations. For the first time, a complete characterization of the 1/f component at the output of the transistors is presented as well as the extraction of SPICE parameters. Regarding the characterization of generation-recombination components (unsystematic presence), a statistical study has showed that transistors with small emitter areas (Ae < 1 µm2) are affected more than the transistors with large emitter areas by the presence of g-r components. Comparison between different technologies shows that these components are much more present in the less mature technologies. When these components have been associated to RTS, time and frequency domain method is implemented. Finally, in some cases, a study at low temperatures was used to extract the activation energy of the traps responsible for the generation-recombination components.

The work assesses progress in the design of measuring workplace for measuring low level magnetic fields of low frequencies. The thesis describes the basic method of spreading of electromagnetic waves in free losslees ambience. Further is described effect with low level of ultra-low-frequency magnetic fields in the frequency band from 0.01 to 30 Hz for an individual or group of people and also the draft measuring methods for indicating or measuring changes in magnetic fields. Thesis deals with individual blocks of measuring workstation.

Ces travaux de thèse s’inscrivent dans le cadre de la prise en compte des incertitudes des paramètres d’entrée d’un modèle éléments finis de structures spatiales. L’approche probabiliste a été utilisée pour quantifier l’influence de l’aléa sur les fonctions de transfert.Nous avons proposé une adaptation de la méthode de superposition modale au cadre probabiliste, basée sur l’identification de la loi de probabilité des variables des fonctions de transfert. Le verrou technologique que constitue la construction de lois de probabilité de grande dimension a été levé par l’utilisation de la théorie des copules. Finalement, la méthodologie proposée a été validée sur un exemple industriel et les perspectives offertes par l’étude des structures de dépendances entre variables d’une fonction de transfert sont prometteuses. / This PhD thesis aims at take into account input parameters uncertainty of space structures finite element models. To achieve this goal probabilistic approach is used to quantify the influence of randomness on transfer functions. An adaptation of modal superposition method to the probabilistic framework is proposed. This original approach is based on the identification of the probability distribution of transfer function variables. The main difficultyconcerns the construction of a large dimension probability distribution. This pointis tackled by the use of copula theory. Finally, the proposed methodology is validated onan industrial example. Moreover, the analysis of the dependence structures between the transfer function variables offers a lot of perspectives.

Depuis un demi-siècle, le développement de la traction électrique ferroviaire en courant monophasé en France s'est appuyé sur les progrès réalisés aussi bien au niveau des installations fixes de traction qu'au niveau du matériel roulant. Toutefois, au cours des deux dernières décennies, l'augmentation du trafic et l'introduction de locomotives avec des chaines de traction innovantes ont été à l'origine de phénomènes électriques qui se sont avérés néfastes pour l'exploitation du système. Les premiers phénomènes observés ont été à l'origine de dégâts matériels à bord de locomotives. Il s'agissait de surtensions résultant d'une interaction défavorable entre l'impédance interne de l'infrastructure et les harmoniques générés par les engins moteurs équipés de redresseurs à thyristors. Plus récemment, suite à l'introduction massive d'engins équipés de redresseurs à absorption sinusoïdale de courant, un phénomène de modulation très basse fréquence de la tension caténaire est apparu et a provoqué la mise hors tension des locomotives voire la disjonction de la sous station alimentant le secteur concerné. Ceci constitue aujourd'hui un obstacle majeur à l'utilisation généralisée de la nouvelle technologie à bord des engins. Ces perturbations affectent l'exploitation du système en entrainant généralement des retards voire des annulations de circulation. Elles peuvent aussi dégrader la qualité d'énergie du réseau d'électricité amont à un niveau tel que la sous-station d'alimentation doit être déconnectée. La direction de l'ingénierie de la SNCF a donc pris des dispositions pour comprendre puis éviter l'apparition des phénomènes observés. Une collaboration interne entre le centre d'ingénierie du matériel et la division des installations fixes de traction électrique ainsi qu'un partenariat avec le LAPLACE ont été mis en place. Le présent document est le fruit de cette collaboration. L'objectif de cette thèse est donc d'étudier et de modéliser les interactions entre les engins et les installations fixes de traction sur le réseau français 25kV/50Hz. Ce manuscrit comporte deux parties principales qui s'organisent ainsi : La première partie est consacrée à l'étude du phénomène de modulation très basse fréquence de la tension caténaire. Les modèles des deux principaux composants du système sont d'abord présentés. Les études ainsi menés permettent de comprendre l'origine du phénomène, puis ensuite de développer une méthode de caractérisation des engins permettant de retrouver les limites de stabilité dans les secteurs problématiques du réseau ferré. Ceci nous a conduit à proposer une représentation générale des locomotives modernes sous forme d'une matrice admittance qu'il est possible d'obtenir par une mesure directe sur des engins réels. La deuxième partie concerne l'étude des interactions harmoniques à l'origine de surtensions sur la caténaire. L'analyse systématique du phénomène est basée sur des outils de simulation de circuits électroniques de puissance utilisant une bibliothèque de modèles élémentaires. La première étape consiste à développer un modèle « moyenne fréquence » du réseau d'alimentation afin de mettre en évidence les fréquences de résonance de l'ensemble ligne/sous-station. La deuxième étape consiste à modéliser les locomotives afin de prendre en compte leur réponse harmonique. Au final, il devient possible de savoir si un engin donné va générer des déformations de la tension en vérifiant si l'une des composantes harmoniques du courant absorbé coïncide avec une des résonances caractéristique du circuit d'alimentation. Pour compléter cette deuxième partie, une modélisation plus fine, intégrant l'effet de peau et l'effet de proximité est abordée. Elle s'appuie sur la caractérisation expérimentale en moyenne fréquence d'un transformateur 50Hz. Ceci nous permet de vérifier l'influence de ces phénomènes sur le comportement fréquentiel du réseau d'alimentation. / For a half a century, the increasing development of AC electrical traction railway networks in France relied on the progress made in the infrastructure power supply an in the rolling stock. However, over the past two decades, increased traffic and the introduction of modern locomotives were the cause of electrical phenomena that have proven harmful to the operation of the railway network. The first events that occurred induced serious faults on board locomotives. It was overvoltages resulting from unfavourable interaction between the internal impedance of the infrastructure and the harmonics generated by the electrical vehicles using thyristor controlled rectifiers. More recently, with the massive introduction of active front-end locomotives, problems of low frequency oscillations and instability were observed causing power off locomotives or disjunction of the sector sub-station. The objective of this thesis is to study and model the interactions between locomotives and fixed installations for electric traction on the French rail network 25kV/50Hz. This script has two main parts, which organized as follows: The first part is devoted to the study of the phenomenon of very low frequency modulation of the catenary voltage. The models of the two main components of the system, namely the single-phase power and the active front-end locomotives are first presented. Studies conducted this way, help to understand the origin of the phenomenon and then to develop a method to characterize the vehicle to find the stability limits in problems sectors of the rail network. This led us to propose a general representation of modern locomotives as an admittance matrix that can be obtained by direct measurement on real machines. The second part is the study of harmonic interactions causing overvoltages on the catenary. Systematic analysis of the phenomenon is based on simulation tools of power electronics circuits using a collection of specific elementary models. The first step consists in developing a “medium frequency” model of the power network in order to highlight the resonance and anti-resonance frequencies of the line/sub-station set. The second step is to model locomotives to take into account their harmonic response. In the end, it becomes possible to know whether a particular machine will generate deformations of the catenary voltage, by checking if any of the harmonic components of the consumed current coincides with one of the characteristic resonances of the traction electric circuit. To complete the second part, a more detailed model is discussed incorporating physical phenomena that occur with an increasing frequency (skin effect in the insulted conductors or proximity effect between conductors).It is based on the experimental characterization on medium frequency of a 50Hz transformer. This allows us to check the influence of these phenomena on the frequency behaviour of the supply network.

O Ruído de Baixa Frequência (LFN), tais como o ruído flicker e o Random Telegraph Noise (RTN), são limitadores de performance em muitos circuitos analógicos e digitais. Para transistores diminutos, a densidade espectral de potência do ruído pode variar muitas ordens de grandeza, impondo uma séria limitação na performance do circuito e também em sua confiabilidade. Nesta tese, nós propomos um novo modelo de RTN estatístico para descrever o ruído de baixa frequência em MOSFETs. Utilizando o modelo proposto, pode-se explicar e calcular o valor esperado e a variabilidade do ruído em função das polarizações, geometrias e dos parâmetros físicos do transistor. O modelo é validado através de inúmeros resultados experimentais para dispositivos com canais tipo n e p, e para diferentes tecnologias CMOS. É demonstrado que a estatística do ruído LFN dos dispositivos de canal tipo n e p podem ser descritos através do mesmo mecanismo. Através dos nossos resultados e do nosso modelo, nós mostramos que a densidade de armadilhas dos transistores de canal tipo p é fortemente dependente do nível de Fermi, enquanto para o transistor de tipo n a densidade de armadilhas pode ser considerada constante na energia. Também é mostrado e explicado, através do nosso modelo, o impacto do implante de halo nas estatísticas do ruído. Utilizando o modelo demonstra-se porque a variabilidade, denotado por σ[log(SId)], do RTN/LFN não segue uma dependência 1/√área; e fica demonstrado que o ruído, e sua variabilidade, encontrado em nossas medidas pode ser modelado utilizando parâmetros físicos. Além disso, o modelo proposto pode ser utilizado para calcular o percentil do ruído, o qual pode ser utilizado para prever ou alcançar certo rendimento do circuito. / Low Frequency Noise (LFN) and Random Telegraph Noise (RTN) are performance limiters in many analog and digital circuits. For small area devices, the noise power spectral density can easily vary by many orders of magnitude, imposing serious threat on circuit performance and possibly reliability. In this thesis, we propose a new RTN model to describe the statistics of the low frequency noise in MOSFETs. Using the proposed model, we can explain and calculate the Expected value and Variability of the noise as function of devices’ biases, geometry and physical parameters. The model is validated through numerous experimental results for n-channel and p-channel devices from different CMOS technology nodes. We show that the LFN statistics of n-channel and p-channel MOSFETs can be described by the same mechanism. From our results and model, we show that the trap density of the p-channel device is a strongly varying function of the Fermi level, whereas for the n-channel the trap density can be considered constant. We also show and explain, using the proposed model, the impact of the halo-implanted regions on the statistics of the noise. Using this model, we clarify why the variability, denoted by σ[log(SId)], of RTN/LFN doesn't follow a 1/√area dependence; and we demonstrate that the noise, and its variability, found in our measurements can be modeled using reasonable physical quantities. Moreover, the proposed model can be used to calculate the percentile quantity of the noise, which can be used to predict or to achieve certain circuit yield.

L'invention du premier transistor à Bell lab's, dans le groupe de W. Shockley, en 1947 a été suivie d'une ère de développement des circuits intégrés (IC). Depuis plusieurs dizaines d'années, la dimension critique des transistors métal/oxyde/semi-conducteurs (les transistors MOS), la longueur physique de la grille, a diminué à un rythme régulier. Cette évolution, motivée par des raisons économiques, a été anticipée par G. Moore, et est de ce fait connue sous le nom de "loi de Moore". La dimension de grille a d'ores et déjà été réduite de plus de 2 ordres de grandeur et, dans son édition2012, l'association ITRS prédit qu'elle décroîtra encore, de 22nm en 2011 à environ 6nm en 2026 [1].Toutefois, cette réduction des dimensions fait apparaître un certain nombre d'effets secondaires qui altèrent le fonctionnement idéal des transistors MOS [2]. / In this dissertation, the performance of junction less transistors (JLTs) as possible candidates for the continuation of Moore’s law was investigated experimentally based on an in-depth study of their electrical characteristics. Current-voltage I-V and capacitance-voltage C-V were analyzed in a wide rangeof temperatures (from 80 K to 350 K) in correlation with device operation mechanism. Lowfrequencynoise was also studied and compared to that of inversion-mode transistors. This study requirednew parameter extraction methods to be defined for JLTs. Their validity was confirmed by 2-dimensional (2D) simulation results. They will be detailed in this dissertation.