Optical trapping is an important tool for studying and manipulating nanoscale objects. Recent experiments have shown that subwavelength control of nanoparticles is possible by using patterned plasmonic nanostructures, rather than using a laser directly, to generate the electric fields necessary for particle trapping. In this thesis we present a theoretical model and experimental evidence for plasmonic optical trapping in nanoscale metal junctions. Further, we examine the use of the resultant devices as ultrasmall photodectors. Electromigrated nanojunctions, or “nanogaps”, have a well-established plasmon resonance in the near-IR, leading to electric field enhancements large enough for single-molecule sensitivity in Surface-Enhance Raman (SERS) measurements. While molecule-based devices have been carefully studied, optically and electrically probing individual quantum dots in nanoscale metal junctions remains relatively unexplored. Plasmon-based optical trapping of quantum dots into prefabricated structures could allow for inexpensive, scalable luminescent devices which are fully integrable into established silicon-based fabrication techniques. Additionally, these metal-nanocrystal-metal structures are ideal candidates to study optoelectronics in ultrasmall nanocrystals-based structures, as well as more exotic nanoscale phenomena such as blinking, plasmon-exciton interactions, and surface-enhanced fluorescence (SEF). We present experimental data supporting plasmon-based optical trapping in the nanogap geometry, and a corresponding numerical model of the electric field-generated forces in the nanogap geometry. Further, we give proof-of-concept measurements of photoconductance in the resultant quantum dot-based devices, as well as challenges and improvements moving forward.

Fabrication process of capacitors and Schottky diodes with nanogap electrodes is explained in this Thesis. The Schottky diode is made with IGZO in the nanogap, whereas the capacitor is made with ZrO2 in the nanogap which acts as the dielectric. Moreover, the electric characterization of both the diode and capacitor was obtained for different frequencies and different diameters. The end result showed that as the frequency increases the diode performance increases, but the capacitance of the capacitors decreases. Also, the barrier height and concentration were obtained using the Mott-Schottky plot for different frequencies. The 10MHz had the highest carrier concentration (5.9E+18cm-3) and barrier height (1V).

Cette thèse se compose de deux parties qui peuvent être considérées comme deux aspects différents de l'électronique moléculaire avec pour point commun les moyens de nanofabrication mis en jeu pour réaliser des dispositifs de mesures électriques à bas courant. La première partie de la thèse concerne l'assemblage de nano-aimants entre électrodes à nanogap. Le besoin croissant de processeurs toujours plus performants et celui d’une densité de stockage toujours plus grande ont poussé la technologie CMOS couramment utilisée dans l'industrie à ses limites physiques vis-à-vis de sa miniaturisation. L'électronique moléculaire et la spintronique moléculaire se révèlent être des alternatives prometteuses à cette technologie pour les futurs dispositifs nanoélectroniques. Mes principaux travaux dans ce domaine ont porté sur l'assemblage entre des électrodes à nanogap, de nano-aimants moléculaires à base de bleu de Prusse ou de son analogue Cs–Co–Cr. Le but était ainsi de faire les premiers pas vers la construction de dispositifs en spintronique moléculaire. Des nanogaps de ~ 7 à 50 nm ont été fabriqués en palladium ou en or sur un substrat Si/SiO₂ par lithographie électronique et lift-off. Les nano-aimants ont été placés dans le gap par diélectrophorèse à courant alternatif (AC DEP). À température ambiante, un courant négligeable a été mesuré sur les jonctions utilisant des nanoparticules de Cs–Co–Cr alors qu’un courant de ~ 30 pA a été mesuré sur celles avec les nanoparticules en bleu de Prusse pour une tension de ~ 1 V. J’ai montré qu‘en fait, l’eau piégée dans les nanogaps altérait sérieusement les mesures de courants et nécessitait un recuit préalable. Pour optimiser la localisation des nanoparticules entre les électrodes, j’ai proposé un programme de simulation de la DEP ne tenant pas compte du mouvement brownien et de la dynamique des fluides. La deuxième partie de la thèse concerne la fabrication de dispositifs de type nanopatch-clamp planaire pour l'enregistrement de courants ioniques à travers les canaux ioniques des protéines membranaires. Les canaux de ces protéines incorporées dans les membranes cellulaires sont des composantes essentielles de toutes les cellules vivantes et sont à la base de divers processus physiologiques tels que ceux dans la communication nerveuse, la contraction musculaire, la sensation tactile, etc. Les mesures de transport d'ions sont maintenant utilisées dans diverses applications telles que le criblage de médicaments dans l'industrie pharmaceutique et les biocapteurs médicaux. La méthode classique pour effectuer des mesures de transport d'ions consiste à utiliser un système patch-clamp. Cependant, cette méthode nécessite d’importantes compétences, des équipements lourds et coûteux et présente une faible efficacité de mesure. Pour pallier ces inconvénients, une solution est de développer des patch-clamps planaires, qui sont modulables, automatisés et faciles d’utilisation. La fabrication du dispositif a consisté en la réalisation d’une piste conductrice constituée d’un empilement de couches Au/Ag sur un substrat de silicium oxydé. Cette piste a été passivée et isolée électriquement par une couche de Si₃N₄/SiO₂ dans laquelle j’ai gravé des micro-trous et j’ai ensuite converti la couche d’Ag en AgCl pour les mesures électriques. Afin de valider le fonctionnement du dispositif sans la membrane, j’ai procédé à des mesures de courant en fonction du temps pour diverses tensions, ce qui m’a ensuite permis de proposer un schéma équivalent électrique. / This thesis consists of two parts. The two parts correspond to two different subjects but with a common feature which is the fabrication of nanometer scale devices for low current measurements. The first part investigated the assembly of Prussian blue and Cs–Co–Cr Prussian blue analogue molecular nanomagnets into nano-patterned electrodes. The ever growing need for higher performance processors and higher storage densities has pushed the CMOS technology commonly used in industry to its physical limitations toward its miniaturization. Molecular electronics and molecular spintronics prove to be promising alternatives for the CMOS in future nanoelectronic devices. Pd or Au gaps with ~ 7–50 nm width were fabricated on a Si/SiO₂ substrate using standard electron beam lithography, metal deposition and lift-off. Nanomagnets were positioned between the gaps via AC dielectrophoresis (DEP). At room temperature, the Cs–Co–Cr Prussian blue analogue nanoparticles exhibited negligible current whereas junction with Prussian blue nanoparticles exhibited ~ 30 pA at ~ 1 V. Water trapped in nanogaps was found to seriously alter current measurements. This problem was solved by heating samples prior to measurements. A simplified DEP simulation program using Delphi was developed, which neglected Brownian motion and fluid dynamics but allowed us to better understand the DEP process. The second part of the thesis investigated the fabrication of devices for measuring electrical currents through membrane protein channels. Membrane-embedded protein channels are the basis of various physiological processes like nervous communication, muscular contraction, tactile sensation, and so on. Electrical measurements are used in different applications such as drug screening in pharmaceutical industry and biosensors. The standard method to perform such measurements is the use of patch-clamp. However, this method requires intense skill and heavy equipment while it exhibits low measurement efficiency. A solution to these drawbacks is the development of planar patch clamps, which are scalable, automated and easier to use. The first device fabrication step was the patterning of Au/Ag electrodes on thermally oxidized Si substrate by optical lithography, metallization and lift-off. Secondly, a passivation layer of Si₃N₄/SiO₂ was deposited on top of electrodes by PECVD. Then micro-holes were formed inside the Si₃N₄/SiO₂ passivation layer stack using Raith-150 e-beam lithography and reactive ion etching. Finally, Ag layer was converted to AgCl using bleach. The test of electrical current was done using Axopatch patch-clamp amplifier. Current versus time measurements for different voltages were recorded without membrane covering the holes, and an electrical model has been developed for the fabricated devices.

abstract: My research centers on the design and fabrication of biomolecule-sensing devices that combine top-down and bottom-up fabrication processes and leverage the unique advantages of each approach. This allows for the scalable creation of devices with critical dimensions and surface properties that are tailored to target molecules at the nanoscale. My first project focuses on a new strategy for preparing solid-state nanopore sensors for DNA sequencing. Challenges for existing nanopore approaches include specificity of detection, controllability of translocation, and scalability of fabrication. In a new solid-state pore architecture, top-down fabrication of an initial electrode gap embedded in a sealed nanochannel is followed by feedback-controlled electrochemical deposition of metal to shrink the gap and define the nanopore size. The resulting structure allows for the use of an electric field to control the motion of DNA through the pore and the direct detection of a tunnel current through a DNA molecule. My second project focuses on top-down fabrication strategies for a fixed nanogap device to explore the electronic conductance of proteins. Here, a metal-insulator-metal junction can be fabricated with top-down fabrication techniques, and the subsequent electrode surfaces can be chemically modified with molecules that bind strongly to a target protein. When proteins bind to molecules on either side of the dielectric gap, a molecular junction is formed with observed conductances on the order of nanosiemens. These devices can be used in applications such as DNA sequencing or to gain insight into fundamental questions such as the mechanism of electron transport in proteins. / Dissertation/Thesis / Doctoral Dissertation Physics 2019

Dans ce travail de thèse nous avons étudié les propriétés de fluorescence de films minces d’or dopés avec des molécules organiques Nous avons montré par imagerie électroniques MEB et TEM qu’ils sont structurés en agglomérats de nanocristaux (5 à 10nm) recouverts de molécules formant un gap nanométrique. Dans les spectres d’extinction nous avons observé la présence de la résonance plasmon du métal ainsi que d’une autre résonance à 600nm que nous attribuons au plasmon de gap.Les spectres d’émission et d’excitation de fluorescence ont confirmé que ces films dopés fluorescents avec une composante venant de la fluorescence de l’or, et une autre caractéristique de la présence des molécules fluorescentes. Les décalages spectraux en excitation et en émission à la fois de l’or et des molécules sont les signes d’un couplage fort entre leurs états électroniques, ce qui serait en accord avec la très forte concentration de molécules dans le film (1/100 molaire)L’observation non intuitive de la fluorescence des molécules insérées dans la couche d’or aurait pour origine l’augmentation considérable de leur taux radiatifs qui a été récemment observé dans les nanogaps. / In this thesis work we studied the fluorescence properties of gold thin films doped with organic molecules. We have shown by electronic imaging SEM and TEM that they are structured in agglomerates of nanocrystals (5 to 10 nm) covered with molecules forming a nanometric gap. In the quenching spectra we observed the presence of the plasmon resonance of the metal as well as another resonance at 600nm that we attribute to the gap plasmon.The fluorescence emission and excitation spectra confirmed that these fluorescent doped films with a component coming from the fluorescence of gold, and another characteristic of the presence of fluorescent molecules. The spectral shifts in excitation and in emission of both the gold and the molecules are the signs of a strong coupling between their electronic states, which would be in agreement with the very high concentration of molecules in the film (1/100 molar)The non-intuitive observation of the fluorescence of the molecules inserted into the gold layer is due to the considerable increase in their radiative levels that has recently been observed in nanogaps.

Thesis advisor: Michael J. Naughton / Nanoscale biosensing devices improve and enable detection mechanisms by taking advantage of properties inherent to nanoscale structures. This thesis primarily describes the development, characterization and application of two such nanoscale structures. Namely, these two biosensing devices discussed herein are (1) an extended-core coaxial nanogap electrode array, the ‘ECC’ and (2) a plasmonic resonance optical filter array, the ‘plasmonic halo’. For the former project, I discuss the materials and processing considerations that were involved in the making of the ECC device, including the nanoscale fabrication, experimental apparatuses, and the chemical and biological materials involved. I summarize the ECC sensitivity that was superior to those of conventional detection methods and proof-of-concept bio-functionalization of the sensing device. For the latter project, I discuss the path of designing a biosensing device based on the plasmonic properties observed in the plasmonic halo, including the plasmonic structures, materials, fabrication, experimental equipment, and the biological materials and protocols. / Thesis (PhD) — Boston College, 2019. / Submitted to: Boston College. Graduate School of Arts and Sciences. / Discipline: Physics.

L'enjeu de l'électronique moléculaire est la connexion de la molécule à un dispositif macroscopique. Le but de cette thèse est d'étudier le transport électronique dans des nanocassures métalliques, structures d'accueil de molécules, puis d'y insérer une molécule pour réaliser un transistor moléculaire. Connaître les propriétés de transport de la structure d'accueil est un point clé pour la fabrication du transistor moléculaire et la compréhension de ses propriétés électroniques. Les nanocassures sont obtenues par électromigration d'un nanofil d'or. Une forte densité de courant entraine le déplacement des atomes d'or et provoque la rupture du nanofil. Le processus d'électromigration contrôlée développé lors de cette thèse est effectué à température ambiante, et permet de limiter les déplacements atomiques afin d'obtenir des coupures de taille nanométrique. L'échantillon est immédiatement refroidi à 4K pour limiter tous processus diffusifs dégradant la nanocassure formée, et il est caractérisé électriquement. L'ajustement des courbes I-V par un modèle tunnel donne les travaux de sortie des électrodes et la distance inter-électrodes, distance à comparer avec la taille de la molécule. La courbe I-V permet aussi de détecter la présence d'agrégats métalliques piégés entre les électrodes lors de l'électromigration. La dernière étape de la réalisation d'un transistor moléculaire est le dépôt de la molécule. Ce dépôt est effectué in-situ à 4K, sous vide, par sublimation d'une poudre de C60 par effet Joule. Les premiers tests montrent qu'il est possible d'obtenir un tapis de molécules sans dégrader les nanocassures.

The fifth and sixth generations of mobile communications and the internet of things (IoT) demand high-performance electronic devices made at low cost over a large area. Unlike the conventional Si-based electronics, the emerging large-area electronics (LAE) require flexible, stretchable, and lightweight devices that are printable and able to mass manufacture without compromising the performance of state-of-the-art electronic devices. Hence, there is a quest to find alternative fabrication routes and conventional photolithography. In this research work, we explored the adhesion lithography (a-Lith) to further simplify the process steps by adapting bi-layer metals to induce intrinsic stress in the bi-layer and hence facilitate the self-peeling of metal layers which results in more uniform and smaller nanogap between two metals than the previously established a-Lith fabricated nanogaps. The nanogap metal electrodes are further used to fabricate radio frequency (RF) Schottky diodes made using a printable metal oxide semiconductor and flashlight annealing over wafer-scale and demonstrate the operation frequencies above 100 GHz/47 GHz (intrinsic/extrinsic). Notably, for the first time, photonic annealing on such an ultra-small (< 20 nm) nanoscale channel was demonstrated, and the rapid manufacturing of RF diodes from the solution route was achieved. On the other hand, for the first time, organic diodes made using a-Lith fabricated nanogap metal electrodes, and high mobility polymer semiconductors with molecular dopants showed an extrinsic cut-off frequency well above 14 GHz. Finally, the nanogap metal electrodes were explored as a mold and shadow mask to fabricate nano-feature soft stamp and nano-fluidic channels (NFC), respectively. The soft stamp can replicate the high aspect ratio nanoscale features on any arbitrary substrates using available soft lithography routes, and the NFC is further envisioned for bio-molecules detection and sensing applications.

L'introduction du transistor à un électron (SET) a secoué l'industrie des semi-conducteurs, avec des promesses d'efficacité inégalée. Cependant, le coût et la complexité associés à la réalisation d'un fonctionnement stable ont fortement entravé leur adoption. Après être tombé en dehors des grâces de l'industrie, la recherche universitaire a continué à pousser, démontrant des techniques novatrices pour la création de SET. Au cœur de ce problème de stabilité, il y a le besoin de construire de manière contrôlable des nanoislands de moins de 10 nm. Parmi les méthodes disponibles pour cette formation nanoisland, le dépôt de couche atomique (ALD) se distingue comme un processus hautement contrôlable industriellement. La deuxième barrière à l'entrée est la création d'électrodes nanogap, utilisées pour injecter du courant à travers ces nanoislands, pour lesquelles les chercheurs se sont largement appuyés sur des techniques de fabrication non évolutives comme la lithographie par faisceau d'électrons et le faisceau ionique focalisé. La technique d'évaporation de bord d'ombre surmonte les problèmes de complexité et d'échelle de la fabrication de nanogap, ouvrant de nouvelles possibilités. Dans ce travail, ALD sera démontré comme une superbe technique pour la culture de vastes réseaux 3D de nanoparticules de platine sous 2nm encapsulées dans Al2O3. ALD a fourni un moyen de faire croître ces matrices de nanoparticules en un seul processus, sous vide et à basse température. Grâce à l'évaporation du bord d'ombre, la lithographie UV a ensuite été utilisée pour former des électrodes nanogap avec des largeurs latérales élevées (100μm), avec des écarts démontrés au-dessous de 7 nm. La combinaison de ces techniques aboutit à un procédé de fabrication à haut rendement et à faible besoin pour la construction de SET complets. A partir des transistors résultants, de fines lamelles ont été préparées à l'aide de FIB et des modèles 3D ont été reconstruits par tomographie TEM pour analyse. La caractérisation électrique a été effectuée jusqu'à 77K, avec une modélisation révélant le transport de Poole-Frenkel en parallèle à un éventuel cotunneling. Des blocus de Coulomb stables, la signature des SET, ont été observés avec une périodicité régulière et étaient identifiables jusqu'à 170K. L'optimisation de ce processus pourrait produire des SETs de surface élevée capables de fonctionner de manière stable à température ambiante. / The introduction of the single electron transistor (SET) shook the semiconductor industry, with promises of unrivaled efficiency. However, the cost and complexity associated with achieving stable operation have heavily hindered their adoption. Having fallen out of the graces of industry, academic research has continued to push, demonstrating novel techniques for SET creation. At the core of this stability issue is a need to controllably build nanoislands smaller than 10nm. Among the methods available for this nanoisland formation, atomic layer deposition (ALD) sets itself apart as an industrially scalable, highly controllable process. The second barrier to entry is the creation of nanogap electrodes, used to inject current through these nanoislands, for which researchers have leaned heavily on non-scalable fabrication techniques such as electron beam lithography and focused ion beam. The shadow edge evaporation technique overcomes the complexity and scaling issues of nanogap fabrication, opening new possibilities. In this work, ALD will be demonstrated as a superb technique for growing vast 3D arrays of sub 2nm platinum nanoparticles encapsulated in Al2O3. ALD provided a means of growing these nanoparticle matrices in a single process, under vacuum, and at low temperatures. Through shadow edge evaporation, UV lithography was then utilized to form nanogap electrodes with high lateral widths (100µm), with gaps demonstrated below 7nm. The combination of these techniques results in a high yield, low requirement fabrication process for building full SETs. From the resulting transistors, thin lamellas were prepared using FIB and 3D models were reconstructed via TEM tomography for analysis. Electrical characterization was performed down to 77K, with modeling revealing Poole-Frenkel transport alongside possible cotunneling. Stable Coulomb blockades, the signature of SETs, were observed with regular periodicity and were identifiable up to 170K. Optimization of this process could yield high surface area SETs capable of stable operation at room temperature.

Biosensors are used for the detection of a range of analytes for applications in healthcare, food production, environmental monitoring and biodefence. However, many biosensing platforms are large, expensive, require skilled operators or necessitate the analyte to be labelled. Direct electrochemical detection methods present a particularly attractive platform due to the simplified instrumentation when compared to other techniques such as fluorescence-based biosensors. With modern integrated circuit capabilities electrochemical biosensors offer greater suitability for monolithic integration with any necessary signal processing circuitry. This thesis explores micro- and nanogap devices for both redox cycling and dielectric spectroscopy sensing mechanisms. By using two electrodes with interelectrode separation down to distances in the micro- and nanometre scale, several benefits can be realised. Firstly the close proximity of the two electrodes significantly reduces the interdiffusion time. This allows an electroactive species to be rapidly shuttled across the gap and switched between reduced and oxidised states. The result is feedback amplification of the amperometric response, increasing the signal. The second benefit is that the screening effect caused by electric double layers at the electrode–electrolyte interface is reduced due to the electric double layers occupying a larger fraction of the sensing volume. This significantly improves the sensor suitability for dielectric spectroscopy by increasing the potential drop across the biolayer. These two sensing mechanisms are demonstrated using a large area dual-plate microgap device for the detection of two different analytes. Utilising the first mode, detection of cysteine–cystine, an important redox couple involved in the signalling mechanism for the regulation of protein function, interaction and localisation is shown. The microgap device is then used for dielectric spectroscopy sensing of a mannose-specific uropathogenic Escherichia coli strain whilst also demonstrating the effect of ionic concentration on the capacitive response. The response of these devices is highly dependent on the interelectrode separation as well as the surface area of the electrodes. However, fabrication of large-area nanogap devices presents a significant challenge. This meant that careful optimisation and the development of novel techniques was necessary. This work reports the design, fabrication and characterisation of both a vertical and a horizontal coplanar large area nanogap device. The vertical nanogap device is fabricated using an inductively-coupled plasma reactive ion etching process to create a channel in a silicon substrate. A lower electrode is then optically patterned in the channel before anodically bonding a second identical electrode patterned on glass directly above. The horizontal nanogap device uses a different approach, utilising a state-of-the-art electron-beam lithography system to create a long serpentine nanogap with passivation to reduce fringing effects. The design allows the electron-beam lithography step to be substituted with nanoimprint lithography to reduce cost and improve throughput. Both of these devices have integrated microfluidic channels and provide a capacity for relatively high-throughput production.