Denna studie undersöker hur representanter från musikindustrin använder sig av hashtags, sociala medier och vilka effekter hashtags har samt, vilken effekt de skulle kunna ha på deras arbete. Användningen sätts i förhållande till tio redan definierade funktioner av hashtags.Uppsatsens syfte är att bidra till djupare förståelse hur hashtags används och hur dessa kan användas inom musikindustrin. Genom att förtydliga om detta är ett verktyg som kan användas för att lättare sprida information på social media. Detta genomfördes genom en kvalitativ studie och utförandet av semistrukturerade intervjuer med fem representanter från musikindustrin och två respondenter som arbetar inom andra områden, varav en är har forskat på twitter och hashtags och en jobbar med att stärka användningen av digitala verktyg på ett större företag. Detta har sedan blivit granskat genom en induktiv ansats. Frågeställningen har besvarats genom att resultaten från empirin analyserats utifrån teorin.Studien kom fram till att representanterna från musikindustrin i huvudsakligen använde sociala medier och hashtags för att marknadsföra sig själva och sina band. Men Artist 1 använde hashtags mer än Skivbolag 1. Effekterna hashtags hade var både positiva och negativa. Fördelen var att hashtags kunde rikta deras budskap mer exakt och nackdelen var att personer kan ha en negativ bild av hashtags och på sätt bli kritiska till användningen av dem. / This study examines how representatives from the music industry use hashtags, social media and what effects hashtags have, and what effect they could have on their work. The usage is set in relation to ten already defined functions of hashtags.The purpose of the thesis is to contribute to a deeper understanding of how hashtags are used and how these can be used in the music industry. By clarifying whether this is a tool that can be used to more easily disseminate information on social media. This was done through a qualitative study and was conducted by semi-structured interviews with five representatives from the music industry and two respondents as workers in other areas, one of which has been researching twitter and hashtags, and one who is working on strengthening the use of digital tools at a large company. This has since been examined through an inductive approach. The question has been answered by analysing the results of the empirical data based on the theory.The study concluded that the representatives of the music industry mainly used social media and hashtags to market themselves and their bands. But the artist used hashtags more than the record company. The effects of hashtags had been both positive and negative. The advantage was that hashtags were able to target their messages more accurately and the disadvantage was that people could have a negative image of hashtags and thus become critical of their use.

L’avantage de cette architecture FDSOI par rapport à l’architecture Si-bulk est qu’elle possède une face arrière qui peut être utilisée comme une deuxième grille permettant de moduler la tension de seuil Vth du transistor. Pour améliorer les performances des transistors canal p (PMOS), du Germanium est introduit dans le canal (SiGe) et au niveau des sources/drain pour la technologie 14nm FDSOI. Par ailleurs, la réduction de la géométrie des transistors à ces dimensions nanométriques fait apparaître des effets de design physique qui impactent à la fois les performances et la fiabilité des transistors.Ce travail de recherche est développé sur quatre chapitres dont le sujet principal porte sur les performances et la fiabilité des dernières générations CMOS soumises aux mécanismes de dégradation BTI (Bias Temperature Instability) et par injections de porteurs chauds (HCI) dans les dernières technologies 28nm et 14nm FDSOI. Dans le chapitre I, nous nous intéressons à l’évolution de l’architecture du transistor qui a permis le passage des nœuds Low-Power 130-40nm sur substrat silicium à la technologie FDSOI (28nm et 14nm). Dans le chapitre II, les mécanismes de dégradation BTI et HCI des technologies 28nm et 14nm FDSOI sont étudiés et comparés avec les modèles standards utilisés. L’impact des effets de design physique (Layout) sur les paramètres électriques et la fiabilité du transistor sont traités dans le chapitre III en modélisant les contraintes induites par l’introduction du SiGe. Enfin le vieillissement et la dégradation des performances en fréquence ont été étudiés dans des circuits élémentaires de type oscillateurs en anneau (ROs), ce qui fait l’objet du chapitre IV. / The subject of this thesis developed on four chapters, aims the development of advanced CMOS technology nodes fabricated by STMicroelectronics in terms of speed performance and reliability. The main reliability issues as Bias Temperature Instability (BTI) and Hot-Carriers (HC) degradation mechanisms have been studied in the most recent 28nm and 14nm FDSOI technologies nodes. In the first chapter, we presents the evolution of transistor architecture from the low-power 130-40nm CMOS nodes on silicon substrate to the recent FDSOI technology for 28nm and 14nm CMOS nodes. The second chapter presents the specificity of BTI and HCI degradation mechanisms involved in 28nm and 14nm FDSOI technology nodes. In the third chapter, we have studied the impact of layout effects on device performance and reliability comparing symmetrical and asymmetrical geometries. Finally the trade-off between performance and reliability is studied in the fourth chapter using elementary circuits. The benefit of using double gate configuration with the use of back bias VB in FDSOI devices to digital cells, allows to compensate partially or totally the aging in ring oscillators (ROs) observed by the frequency reduction. This new compensation technique allows to extend device and circuit lifetime offering a new way to guaranty high frequency performance and long-term reliability.

Indium-gallium-zinc oxide (IGZO) and zinc-tin oxide (ZTO) are investigated for thin-film transistor (TFT) applications. Negative bias illumination stress (NBIS) is employed for electrical stability assessment. Unpassivated IGZO and ZTO TFTs suffer from severe NBIS instabilities. Zinc-tin-silicon oxide is found to be an effective passivation layer for IGZO and ZTO TFTs, significantly improving the NBIS stability. NBIS instabilities in unpassivated TFTs are attributed to an NBIS-induced desorption of chemisorbed oxygen from the channel layer top surface, exposing surface oxygen vacancies. A ZTSO layer protects the channel layer top surface from adsorbed gas interactions and also appears to reduce the density of oxygen vacancies. The best device architectures investigated with respect to TFT electrical performance are found to be staggered with aluminum electrodes for unpassivated TFTs and coplanar with ITO electrodes for ZTSO-passivated TFTs. Annealing in wet-O₂ is not found to be effective for improving the performance of IGZO or ZTO TFTs or for reducing the post-deposition annealing temperature. / Graduation date: 2012

Ce travail contribue à l'évaluation de la technique de génération de seconde harmonique induite par un champ électrique quasi statique, ou technique EFISHG, appliquée au domaine de la microélectronique. Une description du principe de la technique EFISHG, basé sur l'optique non linéaire, permet d'appréhender l'origine physique de cette méthode. Un état de l'art a permis d'identifier deux champs d'applications liés à la microélectronique : l'analyse de défaillance, via la mesure en temps réelle des variations de champs électriques internes dans les circuits intégrés, et la fiabilité par l'étude du piégeage de charges à l'interface Si/SiO2 et de la dégradation dite de " Negative Bias Temperature Instability " ou NBTI. Ce manuscrit présente les différentes étapes qui ont permis l'élaboration d'un banc de test en vue de l'évaluation de l'applicabilité de la technique EFISHG à ces problématiques. Les résultats expérimentaux obtenus avec ce montage ont permis de mettre en avant les possibilités qu'offre la technique EFISHG à caractériser et à accélérer le vieillissement NBTI.

Frontend and backend wearout mechanisms are major reliability concerns for modern microprocessors. In this research, a framework which contains modules for negative bias temperature instability (NBTI), positive bias temperature instability (PBTI), hot carrier injection (HCI), gate-oxide breakdown (GOBD), backend time-dependent dielectric breakdown (BTDDB), electromigration (EM), and stress-induced voiding (SIV) is proposed to analyze the impact of each wearout mechanism on state-of-art microprocessors and to accurately estimate microprocessor lifetimes due to each wearout mechanism. Taking into account the detailed thermal profiles, electrical stress profiles and a variety of use scenarios, composed of a fraction of time in operation, a fraction of time in standby, and a fraction of time when the system is off, this work provides insight into lifetime-limiting wearout mechanisms, along with the reliability-critical microprocessor functional units for a system. This enables circuit designers to know if their designs will achieve an adequate lifetime and further make any updates in the designs to enhance reliability prior to committing the designs to manufacture.

This study explores what factors Kenyan journalists perceive influence their assessment of progress in the country and in what ways they believe their world-views impact their reporting. The study also assesses the journalists' awareness and knowledge of national progress achieved in development indicators. The study took an exploratory approach and used a mixed research method design. Nine semi-structured in-depth interviews with Kenyan journalists were complemented with a multi-choice web-survey. The survey was circulated using the snow-ball principle and after an eight-week period, 74 survey responses were collected and analyzed. The study reveals that knowledge, newsroom experience and the negative bias of news are all factors that journalists report influence their perceptions, although many of the journalists did not believe their perceptions affect their reporting. The study also found that the journalists overestimated their actual factual knowledge of progress and underestimated the actual progress achieved in the country. On average, the journalists picked the right answer in about a third of the fact-based questions, which were related to the country's performance in development indicators. Considering that journalism plays a vital function in society, the research suggests cross-sector discussions and further studies should be carried out on potential knowledge gaps and possible cognitive biases of journalists.

Ce travail contribue à l’évaluation de la technique de génération de seconde harmonique induite par un champ électrique quasi statique, ou technique EFISHG, appliquée au domaine de la microélectronique. Une description du principe de la technique EFISHG, basé sur l’optique non linéaire, permet d’appréhender l’origine physique de cette méthode. Un état de l’art a permis d’identifier deux champs d’applications liés à la microélectronique : l’analyse de défaillance, via la mesure en temps de réelle des variations de champs électriques internes dans les circuits intégrés, et la fiabilité par l’étude du piégeage de charges à l’interface Si/SiO2 et de la dégradation dite de « Negative Bias Temperature Instability » ou NBTI. Ce manuscrit présente les différentes étapes qui ont permis l’élaboration d’un banc de test en vue de l’évaluation de l’applicabilité de la technique EFISHG à ces problématiques. Les résultats expérimentaux obtenus avec ce montage ont permis de mettre en avant les possibilités qu’offre la technique EFISHG à caractériser et à accélérer le vieillissement NBTI. / This work concerns the elaboration of an industrial method for Single Event Effect (SEE) sensitivity testing on integrated circuits. The concerned SEEs are those produced by heavy ions and are mainly Single Event Upset (SEU) and Single Event Latchup (SEL). The original test approach chosen in this study relies on the use of infrared laser pulses striking the backside of the tested device. Laser pulse and heavy ion interaction with semiconductor materials are described and a presentation of the particle accelerator test and some former laser test methods is also given. Advantages and drawbacks of those two techniques are discussed. The developed experimental setup uses a near infrared fiber coupled Neodyme/YAG pulsed laser. Its different elements are described. Using this tool to characterise the SEU sensitivity of several modern SRAMs has allowed to define a test methodology. Its efficiency is discussed and illustrated by different experimental results.