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付記する学位プログラム名: 京都大学卓越大学院プログラム「先端光・電子デバイス創成学」 / 京都大学 / 新制・課程博士 / 博士(工学) / 甲第25295号 / 工博第5254号 / 新制||工||2000(附属図書館) / 京都大学大学院工学研究科電子工学専攻 / (主査)教授 木本 恒暢, 教授 白石 誠司, 准教授 船戸 充 / 学位規則第4条第1項該当 / Doctor of Agricultural Science / Kyoto University / DFAM

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In order to develop more economical and ecologically friendly transformers it is necessary to know the losses throughout the product development process. There are several losses related to transformers, but in this particular case the focus will be on the resistive loss of the transformer. In order to measure this loss first the resonant frequency of the transformer is determined. Since at resonance the secondary side of the transformer is considered to be purely resistive. The aim of this paper is to design and build a closed loop measurement system that is able to perform this task.

A computationally efficient, discrete model is presented for transmission line analysis and passive model order reduction of high-speed interconnect systems. The development of this model was motivated by the on-going efforts in chip/package co-design to route a major portion of the on-chip clock and high-speed data buses through the package in order to overcome the bandwidth reduction and delay caused by the high ohmic loss of on-chip wiring. The geometric complexity of the resulting interconnections is such that model order reduction is essential for rapid and accurate signal integrity assessment to support pre-layout design iteration and optimization. The modal network theory of the skin effect in conjunction with the theory of compact differences is used for the development of discrete models for dispersive, multi-conductor interconnects compatible with passive model order reduction algorithms. The passive reduced-order interconnect modeling algorithm, PRIMA, is then used on the resulting discrete model to generate a low-order, multi-port macromodel for interconnect networks. Numerical examples are used to demonstrate the validity and efficiency of the proposed model.

Neste trabalho são apresentados os valores do primeiro coeficiente de Townsend de ionização, α, para o isobutano puro, obtidos com uma câmara de placas paralelas de anodo resistivo no intervalo de campo elétrico reduzido de 140 Td a 230 Td. O método empregado baseia-se em uma nova versão da técnica de Townsend pulsada, onde a ionização primária é produzida pela incidência de um feixe de laser pulsado de nitrogênio em um eletrodo (catodo) de alumínio. O anodo de vidro de alta resistividade (ρ = 2 x 1012Ω.cm) protege o detector contra descargas disruptivas. Para validação inicial do método, a comparação entre as correntes elétricas medidas nos regimes de ionização e de avalanche foi usada na determinação dos valores de α no nitrogênio, gás amplamente estudado com dados bem estabelecidos na literatura. Esta técnica foi estendida com sucesso para obtenção do parâmetro α para o isobutano puro. A presença de efeitos relativos à carga espacial, recombinação e à queda ôhmica através do anodo resistivo foi investigada mediante variação da taxa de repetição do feixe de laser, de sua intensidade e do campo elétrico aplicado. Destes processos secundários, somente a queda ôhmica mostrou-se relevante e os valores de campo elétrico reduzido foram corrigidos para este efeito. Os primeiros coeficientes de Townsend obtidos são compatíveis, dentro do erro experimental, com os determinados com o programa Magboltz 2 versões 7.1 e 8.6. / In this work are presented data of Townsend first ionization coefficient, α, in pure isobutane, obtained with a parallel plate chamber of resistive anode, for the reduced electric field range of 140 Td up to 230 Td. The adopted method is based on a new version of the Pulsed Townsend Technique, where the primary ionization is produced by the incidence of nitrogen pulsed laser beam in an aluminum electrode (cathode). The glass anode of high resistivity (ρ = 2 x 1012 Ω.cm) protects the detector against sparks. To validate the method, the α values were determined by comparing the ionization and avalanche electric currents in nitrogen, gas widely studied with well-established data in literature. This technique was successfully extended to obtain α parameters in pure isobutane. The presence of effects related to spatial charge, recombination and ohmic drop across the resistive anode was investigated by varying laser pulse repetition rate, its intensity and applied electric field. Of these secondary processes, only the ohmic drop was relevant and the reduced electric field values were corrected for it. The first Townsend coefficients obtained are compatible, within the experimental errors, with those determined with Magboltz 2 program versions 7.1 e 8.6.

Neste trabalho são apresentados os valores do primeiro coeficiente de Townsend de ionização, α, para o isobutano puro, obtidos com uma câmara de placas paralelas de anodo resistivo no intervalo de campo elétrico reduzido de 140 Td a 230 Td. O método empregado baseia-se em uma nova versão da técnica de Townsend pulsada, onde a ionização primária é produzida pela incidência de um feixe de laser pulsado de nitrogênio em um eletrodo (catodo) de alumínio. O anodo de vidro de alta resistividade (ρ = 2 x 1012Ω.cm) protege o detector contra descargas disruptivas. Para validação inicial do método, a comparação entre as correntes elétricas medidas nos regimes de ionização e de avalanche foi usada na determinação dos valores de α no nitrogênio, gás amplamente estudado com dados bem estabelecidos na literatura. Esta técnica foi estendida com sucesso para obtenção do parâmetro α para o isobutano puro. A presença de efeitos relativos à carga espacial, recombinação e à queda ôhmica através do anodo resistivo foi investigada mediante variação da taxa de repetição do feixe de laser, de sua intensidade e do campo elétrico aplicado. Destes processos secundários, somente a queda ôhmica mostrou-se relevante e os valores de campo elétrico reduzido foram corrigidos para este efeito. Os primeiros coeficientes de Townsend obtidos são compatíveis, dentro do erro experimental, com os determinados com o programa Magboltz 2 versões 7.1 e 8.6. / In this work are presented data of Townsend first ionization coefficient, α, in pure isobutane, obtained with a parallel plate chamber of resistive anode, for the reduced electric field range of 140 Td up to 230 Td. The adopted method is based on a new version of the Pulsed Townsend Technique, where the primary ionization is produced by the incidence of nitrogen pulsed laser beam in an aluminum electrode (cathode). The glass anode of high resistivity (ρ = 2 x 1012 Ω.cm) protects the detector against sparks. To validate the method, the α values were determined by comparing the ionization and avalanche electric currents in nitrogen, gas widely studied with well-established data in literature. This technique was successfully extended to obtain α parameters in pure isobutane. The presence of effects related to spatial charge, recombination and ohmic drop across the resistive anode was investigated by varying laser pulse repetition rate, its intensity and applied electric field. Of these secondary processes, only the ohmic drop was relevant and the reduced electric field values were corrected for it. The first Townsend coefficients obtained are compatible, within the experimental errors, with those determined with Magboltz 2 program versions 7.1 e 8.6.

Ultra high temperature (UHT) processing can extend shelf life of milk to several months without refrigeration, which is more convenient and energy saving than pasteurized milk. However, the poor acceptance caused by "cooked" flavors limits its marketing growth, especially in United States. Ohmic heating, which has a more uniform and rapid heating than conventional UHT process, may minimized the flavor change during the thermal treatment. Flavor composition between Ohmic heated UHT milk and other traditionally processed UHT milk (direct steam injection and indirect plate heating) during 36 weeks storage were investigated in this study. A total of 20 volatile compounds were analyzed based on their importance to UHT milk as well as their representation to different chemical classes including sulfur-containing compounds, ketones, lactones, aldehydes and others. Dimethyl sulfide (DMS) and methyl ketones were significant different among three types of UHT heated milk. δ-lactones showed higher amount in Ohmic heating after stored for four weeks, which might generate creamy, fruity intermediate aroma. Other compounds showed no significant difference among three heating processes. Aroma recombination test revealed that the overall aroma of the ultra pasteurized (UP) milk could be mimicked by recombining 15 important reference odorants in the same concentrations as they occurred in the UHT milk using commercial pasteurized milk as the matrix. / Graduation date: 2012

Silicon carbide is a promising wide bandgap semiconductormaterial for high-temperature, high-power, and high-frequencydevice applications. However, there are still a number offactors that are limiting the device performance. Among them,one of the most important and critical factors is the formationof low resistivity Ohmic contacts and high-temperature stableSchottky diodes on silicon carbide. In this thesis, different metals (TiW, Ti, TiC, Al, and Ni)and different deposition techniques (sputtering andevaporation) were suggested and investigated for this purpose.Both electrical and material characterizations were performedusing various techniques, such as I-V, C-V, RBS, XRD, XPS,LEED, SEM, AFM, and SIMS. For the Schottky contacts to n- and p-type 4H-SiC, sputteredTiW Schottky contacts had excellent rectifying behavior afterannealing at 500 ºC in vacuum with a thermally stableideality factor of 1.06 and 1.08 for n- and p-type,respectively. It was also observed that the SBH for p-type SiC(ΦBp) strongly depends on the choice the metal with alinear relationship ΦBp= 4.51 - 0.58Φm, indicating no strong Fermi-level pinning.Finally, the behavior of Schottky diodes was investigated byincorporation of size-selected Au nano-particles in Ti Schottkycontacts on silicon carbide. The reduction of the SBH isexplained by using a simple dipole layer approach, withenhanced electric field at the interface due to the small sizeof the circular patch (Au nano-particles) and large differenceof the barrier height between two metals (Ti and Au) on both n-and p-SiC. For the Ohmic contacts, titanium carbide (TiC) was used ascontacts to both n- and p-type 4H-SiC epilayers as well as onAl implanted layers. The TiC contacts were epitaxiallydeposited using a co-evaporation method with an e-beam Tisource and a Knudsen cell for C60, in a UHV system at low substrate temperature(500 ºC). In addition, we extensively investigatedsputtered TiW (weight ratio 30:70) as well as evaporated NiOhmic contacts on both n- and p-type epilayers of SiC. The bestOhmic contacts to n-type SiC are annealed Ni (&gt;950ºC)with the specific contact resistance of ≈ 8× 10-6Ω cm2with doping concentration of 1.1 × 10-19cm-3while annealed TiW and TiC contacts are thepreferred contacts to p-type SiC. From long-term reliabilitytests at high temperature (500 ºC or 600 ºC) invacuum and oxidizing (20% O2/N2) ambient, TiW contacts with a platinum cappinglayer (Pt/Ti/TiW) had stable specific contact resistances for&gt;300 hours. <b>Keywords</b>: silicon carbide, Ohmic and Schottky contacts,co-evaporation, current-voltage, capacitance-voltagemeasurement, power devices, nano-particles, Schottky barrierheight lowering, and TLM structures.