Orientadores: Evandro Conforti, Cristiano de Melo Galle / Dissertação (mestrado) - Universidade Estadual de Campinas, Faculdade de Engenharia Eletrica e Computação / Made available in DSpace on 2018-08-09T14:44:31Z (GMT). No. of bitstreams: 1 Guimaraes_Murilo_M.pdf: 2868472 bytes, checksum: 35d629f44273794bf3425431f0abbade (MD5) Previous issue date: 2007 / Resumo: O advento das comunicações por fibras ópticas esteve intrinsecamente ligado aos lasers a diodo semicondutor. Posteriormente, principalmente na área de redes metropolitanas, iniciaram-se as aplicações envolvendo o amplificador óptico a semicondutor (SOA, em inglês). O SOA é muito similar ao laser a diodo semicondutor, pois também amplifica a luz incidente através da emissão estimulada, a qual advém da emissão pelos portadores elétricos da região ativa. Estes são bombeados na região ativa através da corrente elétrica injetada na porta elétrica do SOA. A similaridade não é completa devido ao fato do amplificador não possuir realimentação de luz através de uma cavidade óptica ressonante, uma vez que sua região ativa é terminada por faces anti-refletivas. Dessa forma, a luz é amplificada apenas em uma passagem pela região ativa do SOA, sendo também denominado neste caso, SOA-TW, ou de onda caminhante. Desta forma, fazendo-se uma analogia com circuitos, a diferença SOAlaser é semelhante à diferença amplificador-oscilador eletrônico. Devido a esta semelhança, o estudo desenvolvido no presente trabalho, sobre o comportamento da impedância do amplificador óptico a semicondutor, foi baseado em um modelo equivalente de circuito de microondas desenvolvido para o laser a diodo semicondutor. O comportamento da impedância do SOA, composto por seu encapsulamento e chip, é de extrema importância para o controle e aprimoramento de chaveamento eletro-óptico do SOA em redes de última geração. Visando ao aprofundamento deste estudo, análises teóricas a respeito do laser a diodo semicondutor e do amplificador óptico a semicondutor são apresentados. Em seguida, são apresentados os resultados experimentais, com a extração do circuito equivalente do SOA e sua montagem eletro-óptica, com a comparação entre as respostas experimentais e teóricas. Nas considerações finais discutem-se as sugestões para trabalhos futuros sobre o comportamento da impedância eletro-óptica do SOA / Abstract: The advent of communications using optical fiber was always connected, intrinsically, with the semiconductor diode laser. Later, in metropolitan optical networks, the semiconductor optical amplifier (SOA) was introduced to amplify up to eight channels in a WDM (wavelength division multiplex) system. The semiconductor optical amplifier and the semiconductor laser diode are similar since both of them amplify the input light through stimulated emission, which result from electric carriers that are pumped in the active layer through the injection current in the electrical gate in these devices. The similarity is not complete since the SOA has anti-reflection coatings at the end emission faces. Therefore, the light is amplified by the active layer only in one pass; in this case the SOA is called TW SOA (traveling wave SOA). Due to the similarity between the devices, the present study of the SOA impedance behavior was based in an equivalent model from researches about microwave circuits used in the literature to analyze semiconductor diode lasers. The SOA impedance behavior is given by the chip itself and its package; it is important to control and to improve the electrical-optical switch using the SOA for next generation networks. Looking for a deep knowledge about this research, theoretical analyses of the semiconductor diode lasers and SOA was presented in this research. After it, the experimental results are showed with the extraction of the SOA equivalent circuit and the electrical-optical assembly, and the comparison between the experimental and theoretical results was done. At the end of this work, some suggestions for future works are proposed regarding the behavior of the SOA electrical-optical impedance / Mestrado / Telecomunicações e Telemática / Mestre em Engenharia Elétrica

Orientador: Aldario Chrestani Bordonalli / Dissertação (mestrado) - Universidade Estadual de Campinas, Faculdade de Engenharia Eletrica e de Computação / Made available in DSpace on 2018-08-09T17:35:37Z (GMT). No. of bitstreams: 1 Martin_AndreaAcunha_M.pdf: 1893415 bytes, checksum: bd7917b81e12d9fdade5bda5ff7489cb (MD5) Previous issue date: 2007 / Resumo: Neste trabalho, apresenta-se um estudo teórico das características de operação do amplificador a fibra dopada com érbio (EDFA ¿ erbium doped fiber amplifier), considerando-se regimes de operação estático e dinâmico, quando este é aplicado a sistemas de multiplexação por divisão em comprimento de onda. Após a introdução dos mecanismos que permitem a amplificação da luz no interior da fibra dopada, com destaque para a aplicação do bombeio em 980 nm, e a definição da topologia de amplificador a ser avaliada, partiu-se para o desenvolvimento das formulações que permitiram a análise do comportamento estático do amplificador. Primeiramente, a abordagem utilizada foi puramente monocanal, baseada na técnica da largura de banda equivalente, que incorporou uma nova proposta de rotina estável para a simulação do EDFA. Na seqüência, esta mesma rotina foi adaptada a um modelo estático reformulado e de aplicação multicanal, que passou a assumir a distribuição espectral da emissão espontânea amplificada. Numa etapa seguinte, uma segunda rotina de simulação multicanal foi desenvolvida a partir das modificações que o estudo do comportamento dinâmico do EDFA exigiu. Com os dados característicos de uma fibra dopada comercial, as diferentes rotinas de simulação foram utilizadas para avaliar parâmetros de operação do EDFA, tais como ganho de sinal, absorção de bombeio e figura de ruído, entre outros. Observou-se que os três métodos apresentaram, em geral e dentro de certos limites para as condições de contorno às quais o amplificador é submetido, concordância de resultados / Abstract: In this work, a theoretical study of the erbium doped fiber amplifier (EDFA) operational characteristics under static and dynamic conditions for application in wavelength division multiplexing systems is presented. After an introductory analysis of the physical properties that allow for light amplification inside the doped fiber, especially if 980 nm pumps are used, and the definition of the amplifier configuration to be considered, a formulation based on the static behavior of the amplifier was developed. The first approach was purely single channel and based on the equivalent bandwidth technique, which incorporated a new routine to guarantee stable solutions during EDFA simulation for different initial conditions. Then, this same convergence routine was used when the amplified spontaneous emission spectral distribution was considered to restructure the static model and to allow a multi-channel analysis. In a following stage, a second multi-channel simulation routine was conceived due to the modifications that the EDFA transient investigation required. By using the parameter of a commercial fiber, different simulation routines were used to evaluate the EDFA operational parameter, such as gain, pump absorption and noise figure. In general, it was observed that the three methods produced similar results within certain initial condition boundaries for the EDFA operation / Mestrado / Telecomunicações e Telemática / Mestre em Engenharia Elétrica

Orientador: Aldário Chrestani Bordonalli / Dissertação (mestrado) - Universidade Estadual de Campinas, Faculdade de Engenharia Elétrica e de Computação / Made available in DSpace on 2018-08-27T14:08:20Z (GMT). No. of bitstreams: 1 Montes_ThisienGabriel_M.pdf: 6660294 bytes, checksum: 3ca5cc8372729ad8e25455441ebddef9 (MD5) Previous issue date: 2015 / Resumo: Com a demanda por comunicação continuamente aumentando nos últimos anos, mantém-se constante a busca por aperfeiçoamento dos amplificadores ópticos a fibra. Como uma proposta de proporcionar maior largura de banda de amplificação para sistemas ópticos, este trabalho procura caracterizar o comportamento operacional de uma fibra de vidro telurito dopado com érbio e itérbio para diferentes condições iniciais de comprimento de amostra, aplicação de sinais e configuração de bombeio. As amostras, fabricadas pelo Grupo de Fibras Ópticas do IFGW/UNICAMP, foram submetidas a análises experimentais baseadas nas principais topologias de amplificadores a fibra que usam matrizes de sílica. Assim, avalia-se a potencialidade das características de amplificação do vidro telurito fabricado com dosagem de compostos inéditos, além de uma investigação da possibilidade da geração laser utilizando-se essa fibra como meio ativo em configurações com laço de realimentação. Mesmo que o ganho real do sistema não tenha sido determinado pela incerteza em relação a real potência óptica acoplada às amostras, observou-se ser possível a compensação da atenuação que o sinal que se propaga pelas amostras sofre após a aplicação de bombeio. Nesse aspecto, o vidro telurito dopado com érbio e itérbio apresentou potencial de aplicação em amplificação óptica. Uma amostra de 2 cm, comprimento muito menor que o usado em amplificadores ópticos baseados em matrizes de sílica e uma ordem de grandeza menor que os baseados em vidro telurito dopado apenas com érbio, apresentou resultados de ganho óptico on-off da ordem de 30 dB com bombeio bi-direcional de 100 mW. Em relação ao vidro telurito dopado apenas com érbio, os resultados para o ganho on-off chegaram a ser até 15 dB maiores. Além disso, as transições providas pela interação entre a matriz vítrea com o érbio e o itérbio levaram a larguras de banda de 3 dB para o espectro de ASE de até 70 nm, dependendo da configuração de bombeio / Abstract: With the recently increase in data transmission demands, the search for improved fiber amplifier physical processes, materials, and configurations is still on going. As a way to provide a wider amplification bandwidth for optical systems, this work intends to characterize the operational behavior of an erbium and ytterbium doped tellurite fiber for different sample lengths, light coupling and pump configurations. The fiber samples, manufactured by the Optical Fiber Group of the IFGW/UNICAMP, underwent experimental analyses based on the same main pump topologies as those of silica-based optical amplifiers. Thus, the potential amplification characteristics of tellurite glass doped with new compounds are evaluated, as well as an investigation of possible laser generation by using this type of fiber as gain medium within feedback loop configurations. Although real system gain was impossible to determine due to uncertainties in the actual coupled optical power, it was observed that the attenuation during signal propagation through the fiber samples could be compensated after pump application. In this context, the erbium and ytterbium doped tellurite fiber has potential for optical amplification. Samples as short as 2 cm, far shorter than the ones used in silica based amplifiers and one order of magnitude shorter than those based on Er3+ doped tellurite fiber structures, presented on-off optical gain of the order of 30 dB for bi-directional 100-mW pump. By comparing with the latter doped glass structure, the on-off gain results were as high as 15 dB greater. Furthermore, the transitions provided by the interaction between the host glass and both erbium and ytterbium have led to a 70-nm ASE bandwidth, depending on the pumping configuration / Mestrado / Telecomunicações e Telemática / Mestre em Engenharia Elétrica

Ce travail porte sur la conception, la fabrication et la caractérisation d’un photorécepteur cohérent en filière PIC InP pour les applications 100-400 Gbit/s. La solution retenue est un récepteur cohérent pré-amplifié par un SOA pour permettre d’améliorer la responsivité du récepteur par rapport à un récepteur cohérent classique. De plus, ce récepteur est réalisé en technologie enterrée pour permettre un fonctionnement sur une plus grande gamme de longueurs d’onde. Enfin, un récepteur cohérent non pré-amplifié est aussi réalisé pour pouvoir évaluer l’impact de l’intégration du SOA sur le fonctionnement de notre récepteur. La première partie de cette étude est consacrée à des rappels sur les transmissions optiques à très haut débit, à un état de l’art sur les récepteurs cohérents, à une présentation des différents photodétecteurs et à une présentation de l’hybrid 90° qui est le composant coeur des récepteurs cohérents. Dans un second temps, nous présentons les différents choix retenus pour la conception de notre récepteur. L’étude de deux hybrid 90° simulés en technologie ridge et en technologie enterrée est détaillée. Nous commentons également le choix des photodiodes ainsi que le choix du SOA utilisé pour notre composant. Le troisième chapitre est consacré aux différentes étapes technologiques permettant la fabrication de notre récepteur cohérent pré amplifié. Nous commençons par une description des différentes techniques d’épitaxie utilisées. Ensuite, nous présentons en détails les 22 étapes technologiques nécessaires pour réaliser notre récepteur. Enfin, nous regroupons l’ensemble des caractérisations réalisées sur notre récepteur cohérent. Après un rappel sur les différentes parties de celui-ci et de leurs performances clés, nous caractérisons les composants unitaires formant notre récepteur (mixeur cohérent, photodiodes UTC et SOA). Enfin nous présentons les caractéristiques statiques et dynamiques de notre récepteur et nous comparons ses performances avec celles de l’état de l’art. Ces travaux de thèse ont permis de démontrer la faisabilité d’un récepteur pré-amplifié utilisant un SOA intégré en technologie InP enterrée avec un record de responsivité de 5 A/W. Ceci représente un gain de 12,5 dB par rapport à un récepteur cohérent non amplifié idéal et un gain de 15,5 dB par rapport à l’état de l’art des récepteurs cohérents. De plus, la consommation engendrée par cette intégration reste très faible (240 mW). Enfin, nous avons démontré une démodulation à 32 Gbauds avec un facteur Q de 14 dB. La bande passante de 40 GHz de nos diodes est compatible avec des applications à 56 Gbauds et peut être améliorée pour des applications à 100 Gbauds en réduisant la taille des photodiodes. Ce travail de thèse ouvre donc le chemin pour de nouveaux récepteurs pré-amplifés par un SOA pour des applications à 400 Gbit/s / This work focuses on the design, manufacturing and characterization of a coherent photoreceptor in PiC InP for 100-400 Gbit/s applications. The chosen solution is a preamplified coherent receiver with an SOA to improve the responsivity compared to a conventional coherent receiver. In addition, this receiver is made in buried technology to allow operation over a wider range of wavelengths. Finally, a coherent receiver without SOA is also produced to be able to evaluate its impact on the performances of our receiver. The first part of this study is devoted to reminders about very high speed optical transmissions, about state of the art on coherent receivers, about a presentation of the different photodetectors and a presentation of the 90° hybrid which is the core component in coherent receivers. Secondly, we present the various choices made for the design of our receiver. The study of two 90° hybrids simulated in ridge or in buried technology is detailed. We also comment the choices of photodiodes and SOA used for our component. The third chapter is devoted to the different technological steps used to build our preamplified receiver. We start with a description of the different epitaxial techniques used. Then, we present in detail the 22 technological steps required to realize our receiver. Finally, we group all the characterizations preformed on our coherent receiver. We characterize the unitary components of our receiver (hybrid 90°, UTC photodiodes and SOA). Finally we present the static and dynamic characteristics of our receiver and we compare its performances with the state of the art. This thesis demonstrates the feasibility of a preamplified receiver using a SOA in buried InP technology with a record of reponsivity of 5 A/W. This represents a gain of 12.5 dB compared to an ideal coherent receiver and a gain of 15,5 dB compared to the state of the art. In addition, the consumption generated by this integration remains very low (240 mW). Finally, we have demonstrated a 32 Gbauds demodulation with a Q factor of 14dB and the 40 GHz bandwidth of our photodiodes is compatible with 56 Gbauds applications. It can be improved for 100 Gbauds applications by reducing the size of our photodiodes. This thesis opens the way for a new preamplified coherent receiver for 400 Gbit/s applications

Les fibres dopées aux terres rares (REDFs) représentent un composant clef dans la fabrication de sources laser et d’amplificateurs optiques (REDFAs). Leurs hautes performances rendent cette technologie particulièrement attractive pour les applications spatiales en tant que partie active des gyroscopes à fibres optiques, pour le transfert de données et les applications LIDARS. Cependant, la grande sensibilité de ces fibres actives limite l’intégration des REDFAs au sein des missions spatiales. De nombreuses études ont été menées pour dépasser ces limitations et différentes techniques de mitigation ont été identifiées telles que le co-dopage au Cérium ou le chargement en hydrogène de ces fibres optiques. Toutes ces solutions interviennent au niveau du composant sensible et sont classées parmi les stratégies de durcissement par composant permettant la fabrication de fibres dopées aux terres rares résistantes aux radiations adaptées aux besoins des missions spatiales actuelles associées à de faibles doses d’irradiation. Cependant, l’avènement de nouveaux programmes, de nouvelles missions invitent à considérer des doses d’irradiation plus importantes, nécessitant des REDFs et des RDFAs encore plus tolérants aux radiations. A cette fin, une optimisation de l’amplificateur optique au niveau système est étudiée dans le cadre de ce doctorat en exploitant une approche couplant simulation et expériences dont les avancées pourront venir en appui des techniques de durcissement plus conventionnelles. Après la présentation du contexte, des objectifs de ce travail (Chapitre I), les mécanismes fondamentaux de l’amplification et des effets des radiations sont brièvement décrits dans le Chapitre II. Les outils de simulation basés sur l’enrichissement d’un code à l’état de l’art et ses nouvelles fonctionnalités, décrites au Chapitre III, permettent non seulement l’évaluation des performances optiques du REDFA mais aussi de prédire leurs évolutions sous irradiation. De nombreuses études expérimentales ont été réalisées sur différents REDFAs développés durant la thèse et présentés dans le chapitre IV, leurs résultats comparés à ceux issus de la simulation afin de valider nos outils de simulation. Une fois validé, le code a été utilisé pour montrer comment l’optimisation de l’architecture du REDFA permet de mitiger les effets des radiations sur ses performances (Chapitre V). Finalement, le Chapitre VI présente l’étude de l’implémentation dans le code de nouveaux effets, tels que les effets thermiques, le multiplexage du signal d’entrée à travers un couplage théorie/expérience / Rare earth doped fibers (REDFs) are a key component in optical laser sources and amplifiers (REDFAs). Their high performances render them very attractive for space applications as the active part of gyroscopes, high data transfer links and LIDARs. However, the high sensitivity of these active fibers to space radiations limits the REDFA integration in actual and future missions. To overcome these issues various studies were carried out and some mitigation techniques were identified such as the Cerium co-doping or the hydrogen loading of the REDFs. All these solutions occur at the component level and are classified as a hardening by component strategy allowing the manufacturing of radiation hardened REDFAs with adapted performances for low doses space mission. However, with the new space research programs, more challenging space missions are targeted with higher radiations doses requiring even more tolerant REDFs and REDFAs. To this aim, an optimization of the REDFA at the system level is investigated in this PhD thesis exploiting an approach coupling simulations and experiments offering the opportunity to benefit from the outputs of this hardening by system strategy in addition to other state-of-the-art approaches. After presenting the context, objectives of this work, the basic mechanisms about amplification and radiation effects as well as the architectures of REDFAs are described in chapters I and II. After that, we update a state of art REDFAs simulation code described in Chapter III, to consider not only the REDFA optical performances but also their evolutions when exposed to radiations. Several experiments on dedicated home-made REDFA have been performed using accelerated irradiation tests (Chapter IV) and the comparison between these data and those obtained through the new code validated the simulation tools. Thereafter, we exploit the validated code to highlight how the optimization of the REDFA architecture can participate to the mitigation of the radiation effects on the amplifier performances (Chapter V). Finally, in chapter VI the implementation in the code of several other effects, such as thermal effects, input signal multiplexing was investigated both from experimental and calculation point of views

The light-matter interaction in the near-field of high-Q resonators in SOI and SiN platforms is studied. The interactions of high-Q traveling-wave resonators with both resonant and non-resonant nanoparticles are studied and different applications based on this enhanced interactions in near-field such as high-resolution imaging of mode profile of high-Q resonators, label-free sensing, optical trapping, and SERS sensing are investigated. A near-field imaging system for the investigation of the near-field phenomena in the near-field of high-Q resonators is realized. A new technique for high-resolution imaging of the optical modes in high-Q resonators based on the near-field perturbation is developed that enables to achieve a very high resolution (< 10 nm) near-field image. The prospect of the high Q resonators on SOI platform for highly multiplexed label-free sensing and the effect of different phenomena such as the analyte drift and diffusion and the binding kinetics are studied. Also, the possibility of enhancing nanoparticle binding to the sensor surface using optical trapping is investigated and the dynamic of a nanoparticle in the high-Q resonator optical trap is studied. Furthermore, the interaction between a resonant nanoparticle with a high-Q microdisk resonator and its application for SERS sensing is studied. A model for interaction of resonant nanoparticles with high-Q resonators is developed and the optimal parameters for the design of coupled microdisk resonator and a plasmonic nanoparticle are calculated. The possible of resonant plasmonic nanoparticle trapping and alignment in an SiN microdisk resonator optical trap is also shown.

This thesis reports an experimental characterization of the ultrafast gain and refractive index dynamics of a novel InAs/InGaAsP/InP quantum-dot (QD) semiconductor optical amplifier (SOA) operating near 1.55-µm wavelengths, assessing its high-speed performance characteristics for the first time. The thesis also studies the influence of the degree of quantum confinement on the dynamics of SOAs by comparing the zero-dimensional (0-D) QD's dynamics to those in 1-D InAs/InAlGaAs/InP quantum-dash (QDash), and 2-D InGaAsP/InGaAsP/InP quantum-well (QW) SOAs, both of which also operate near 1.55-µm wavelengths, and are made with matching or similar materials and structures. The ultrafast (around 1 ps) and long-lived (up to 2 ns) amplitude and phase dynamics of the SOAs are characterized via advanced heterodyne pump-probe measurements with 150-femtosecond resolution. It is found that the QD SOA has an 80-picosecond amplitude, and 110-picosecond phase recovery lifetime in the gain regime, 4-6 times faster than the QDash and QW recovery lifetimes, as well as reduced ultrafast transients, giving it the best properties for high-speed (> 100 Gb/s) all-optical signal processing in the important telecommunications wavelength bands. An impulse response model is developed and used to analyze the dynamics, facilitating a comparison of the gain compression factors, time-resolved linewidth enhancement factors (alpha-factors), and instantaneous dynamic coefficients (two-photon absorption and nonlinear refractive-index coefficients) amongst the three structures. The quantum-dot device is found to have the lowest effective alpha-factor, 2-10, compared to 8-16 in the QW, as well as time-resolved alpha-factors lower than in the QW—promising for reduced-phase-transient operation at high bitrates. Significant differences in the alpha-factors of lasers with the same structure are found, due to the differences between gain changes that are induced optically or through the electrical bias. The relative contributions of stimulated transitions and free-carrier absorption to the total carrier heating dynamics in SOAs of varying dimensionality are also reported for the first time. Examining the QD electroluminescence and linear gain spectra in combination with the carrier dynamics also brings about conclusions on the nature of the quantum confinement, dot energy-level structure, and density of states—aspects of the material that have not been previously well understood.

This thesis reports an experimental characterization of the ultrafast gain and refractive index dynamics of a novel InAs/InGaAsP/InP quantum-dot (QD) semiconductor optical amplifier (SOA) operating near 1.55-µm wavelengths, assessing its high-speed performance characteristics for the first time. The thesis also studies the influence of the degree of quantum confinement on the dynamics of SOAs by comparing the zero-dimensional (0-D) QD's dynamics to those in 1-D InAs/InAlGaAs/InP quantum-dash (QDash), and 2-D InGaAsP/InGaAsP/InP quantum-well (QW) SOAs, both of which also operate near 1.55-µm wavelengths, and are made with matching or similar materials and structures. The ultrafast (around 1 ps) and long-lived (up to 2 ns) amplitude and phase dynamics of the SOAs are characterized via advanced heterodyne pump-probe measurements with 150-femtosecond resolution. It is found that the QD SOA has an 80-picosecond amplitude, and 110-picosecond phase recovery lifetime in the gain regime, 4-6 times faster than the QDash and QW recovery lifetimes, as well as reduced ultrafast transients, giving it the best properties for high-speed (> 100 Gb/s) all-optical signal processing in the important telecommunications wavelength bands. An impulse response model is developed and used to analyze the dynamics, facilitating a comparison of the gain compression factors, time-resolved linewidth enhancement factors (alpha-factors), and instantaneous dynamic coefficients (two-photon absorption and nonlinear refractive-index coefficients) amongst the three structures. The quantum-dot device is found to have the lowest effective alpha-factor, 2-10, compared to 8-16 in the QW, as well as time-resolved alpha-factors lower than in the QW—promising for reduced-phase-transient operation at high bitrates. Significant differences in the alpha-factors of lasers with the same structure are found, due to the differences between gain changes that are induced optically or through the electrical bias. The relative contributions of stimulated transitions and free-carrier absorption to the total carrier heating dynamics in SOAs of varying dimensionality are also reported for the first time. Examining the QD electroluminescence and linear gain spectra in combination with the carrier dynamics also brings about conclusions on the nature of the quantum confinement, dot energy-level structure, and density of states—aspects of the material that have not been previously well understood.

Στις μέρες μας, οι αυξανόμενες απαιτήσεις για υπηρεσίες υψηλού φασματικού εύρους ζώνης επιβάλλουν την ανάπτυξη νέων τεχνολογιών στο σχεδιασμό των δικτύων νέας γενιάς, ικανές να προσφέρουν α) χαμηλό κόστος κατά το σχεδιασμό του συστήματος, β) μεγάλη απόσταση μετάδοσης, γ) πολλοί χρήστες και δ) υψηλό εύρος ζώνης στην πλευρά του χρήστη για την παροχή των νέων υπηρεσιών. Ωστόσο, τα οπτικά δίκτυα λόγω των αναλογικών χαρακτηριστικών των οπτικών σημάτων τους, υποφέρουν από γραμμικές και μη γραμμικές παραμορφώσεις. Αυτές οι παραμορφώσεις επηρεάζουν άμεσα την απόδοση των συστημάτων και η επίδραση τους αυξάνει με την αύξηση του ρυθμού μετάδοσης. Παραδοσιακά χρησιμοποιούνται οπτικοί τρόποι για την εξομάλυνση των παραμορφώσεων. Ωστόσο, η ραγδαία ανάπτυξη στον τομέα των ηλεκτρονικών αναδεικνύει την ηλεκτρονική εξομάλυνση των παραμορφώσεων ως μία ευέλικτη, χαμηλού κόστους ολοκληρωμένη και βιώσιμη λύση που αποφεύγει τις επιπρόσθετες οπτικές απώλειες. Σκοπός της διδακτορικής διατριβής είναι η εξομάλυνση με αποδοτικό τρόπο των πιο σημαντικών παραμορφώσεων (χρωματική διασπορά, αυτοδιαμόρφωση φάσης και φαινόμενο αλληλουχίας φίλτρων) που δημιουργούνται στα οπτικά δίκτυα και ειδικότερα στα μητροπολιτικά δίκτυα, στα δίκτυα πρόσβασης, και στα παθητικά δίκτυα. Από σχεδιαστικής πλευράς του συστήματος, αυτή η διατριβή προτείνει τη βέλτιστη χρησιμοποίηση λύσεων χαμηλού κόστους, ικανές να επεκτείνουν (σε ρυθμό μετάδοσης και απόσταση) την χρησιμοποίησή τους σε οπτικά δίκτυα νέας γενιάς. Πιο συγκεκριμένα, η απόδοση της ηλεκτρονικής αντιστάθμισης μελετάται για συστήματα που χρησιμοποιούν χαμηλού κόστους, συμβατικούς πομπούς laser άμεσης διαμόρφωσης (DML), που οδηγούνται στα 10 Gb/s. Σκοπός σε αυτήν την περίπτωση είναι η αύξηση της απόστασης και του ρυθμού μετάδοσης που μπορεί να επιτευχθεί, εξομαλύνοντας τις παραμορφώσεις που δημιουργούνται εξαιτίας των χαρακτηριστικών των πομπών και αυτών που δημιουργούνται κατά τη μετάδοση του σήματος (χρωματική διασπορά, αυτοδιαμόρφωση φάσης και φαινόμενο αλληλουχίας φίλτρων) με την βέλτιστη χρησιμοποίηση ηλεκτρονικού εξισωτή. Επιπλέον, όσον αφορά τα παθητικά δίκτυα πρόσβασης νέας γενιάς, μελετάται μία αποδοτική και χρήσιμη τεχνική, χρησιμοποιώντας τα πλεονεκτήματα της χρήσης του ηλεκτρονικού εξισωτή στην πλευρά του δέκτη (OLT). Η πειραματική μελέτη εστιάζει στα παθητικά οπτικά δίκτυα (PON) στα 10 Gb/s χρησιμοποιώντας χαμηλού κόστους, χαμηλού εύρους ζώνης RSOA στην πλευρά του χρήστη (ONU), και ηλεκτρονικό εξισωτή στην πλευρά του δέκτη (OLT). Αυτή η τεχνική προσφέρει την απαιτούμενη ευελιξία για την προσαρμογή στις καινούργιες συνθήκες του συστήματος και την υλοποίηση των απαιτήσεων (πολύ μεγάλες αποστάσεις μετάδοσης, αριθμό χρηστών και ρυθμό μετάδοσης), ενώ ταυτόχρονα μπορεί και εκπληρώνει τις απαιτήσεις χαμηλού κόστους στην ανάπτυξη των μελλοντικών δικτύων πρόσβασης νέας γενιάς. / Nowadays, the rapid increase in bandwidth demanding services imposes new technological directions in the design of next generation optical networks with the purpose to achieve: a) reduced cost, b) larger transmission distances, c) larger number of users and d) higher bandwidth connectivity to the end user. However, due to the analogue nature of the optical signals, the optical networks suffer from a variety of linear and non-linear impairments. These impairments have a direct impact in the signal’s bit error rate performance, while their effect increases as bit rate increases. The compensation of impairments has been traditionally performed by optical means. However, the rapid increase in available electronic processing power has made electronic mitigation of impairments a viable option, leading to an adaptive, low cost and integrated solution which avoids additional optical losses. The goal of this thesis is to study the effective mitigation by electronic means of the most important impairments (i.e. chromatic dispersion, self phase modulation and filter concatenation) that are related with optical networks and particularly metropolitan, access and passive optical networks. From the network (and system) design point of view, this study proposes the optimum use of certain low cost solutions able to extend (in bit rate and coverage) the applicability of next generation optical networks. More specifically, the effectiveness of electronic equalization is examined for systems utilizing low cost, conventional directly modulated laser (DML) sources that are operated at 10 Gb/s. The purpose in this case is to extend the reach and operating data rate of these systems by mitigating the transmission limiting effects due to the source characteristics and the link impairments (dispersion, self-phase modulation, and filter concatenation) with the optimum use of electronic equalization. Moreover, with respect to next generation optical access networks an effective and useful design approach on PON systems is fully investigated, by using the benefits of electronic equalization at the receiver side (ΟLT). This experimental system studies are focusing on PON systems operated at 10 Gb/s by using low cost and low bandwidth RSOAs at the ONU side assisted by electronic equalization at the receiver (ΟLT). This technique offers the required flexibility for the optimum adaptation on the specific network characteristics (in terms of covered distance, number of users and bit rate) and additionally meets the requirements for the development and further extension of future low cost optical access networks.

The realisation of signal processing algorithms in fixed-point offers substantial performance advantages over floating-point realisations. However, it is widely acknowledged that the task of realising algorithms in fixed-point is a challenging one with limited tool support. This thesis examines various aspects related to the translation of algorithms, given in infinite precision or floating-point, into fixed-point. In particular, this thesis reports on the implementation of a given algorithm, an EDFA (Erbium-Doped Fibre Amplifier) control algorithm, on a FPGA (Field Programmable Gate Array) using fixed-point arithmetic. An analytical approach is proposed that allows the automated realisation of algorithms in fixedpoint. The technique provides fixed-point parameters for a given floating-point model that satisfies a precision constraint imposed on the primary output of the algorithm to be realised. The development of a simulation framework based on this analysis allows fixed-point designs to be generated in a shorter time frame. Albeit being limited to digital algorithms that can be represented as a data flow graph (DFG), the approach developed in the thesis allows for a speed up in the design and development cycle, reduces the possibility of error and eases the overall effort involved in the process. It is shown in this thesis that a fixed-point realisation of an EDFA control algorithm using this technique produces results that satisfy the given constraints.