Semiconductor nanotechnology is today a very well studied subject, and demonstrations of possible applications and concepts are abundant. However, well-controlled mass-fabrication on the nanoscale is still a great challenge, and the lack of nanofabrication methods that provide the combination of required fabrication precision and high throughput, limits the large-scale use of nanodevices. This work aims in resolving some of the issues related to nanostructure fabrication, and deals with development of nanofabrication processes, the use of size-reduction for reaching true nanoscale dimensions (20 nm or below), and finally the optical and electrical characterization to understand the physics of the more successful structures and devices in this work. Due to its widespread use in microelectronics, silicon was the material of choice throughout this work. Initially, a fabrication process based on electron beam lithography (EBL) was designed, allowing controlled fabrication of devices of dimensions down to 30 nm, although, generally, initial device dimensions were above 70 nm, allowing the flexible but low-throughput EBL, to be replaced by state-of-the-art optical lithography in the case of industrialization of the process. A few main processes were developed throughout the course of this work, which were capable of defining silicon nanopillar and nano-wall arrays from bulk silicon, and silicon nanowire devices from silicon-on-insulator (SOI) material. Secondly, size-reduction, as a means of providing access to few-nanometer dimensions not available by current lithography techniques was investigated. An additional goal of the size-reduction studies was to find self-limiting mechanisms in the process, that would limit the impact of variations in the size and other imperfections of the initial structures. Thermal oxidation was investigated mainly for self-limited size-reduction of silicon nanopillars, resulting in well-defined quantum dot arrays of few-nm dimensions. Electrochemical etching was employed to size-reduce both silicon nanopillars and silicon nanowires down into the 10-nm regime. This being a novel application, a more thorough study of electrochemical etching of low-dimensional and thin-layer structures was performed as well as development of a micro-electrochemical cell, enabling electrochemical etching of fabricated nanowire devices with improved control. Finally, the combination of nanofabrication and size-reduction resulted in two successful device structures: Sparse and spatially well-controlled single silicon quantum dot arrays, and electrically connected size-reduced silicon nanowires. The quantum dot arrays were investigated through photoluminescence spectroscopy demonstrating for the first time atomic-like photoemission from single silicon quantum dots. The silicon nanowire devices were electrically characterized. The current transport through the device was determined to be through inversion layer electrons with surface states of the nanowire surfaces greatly affecting the conductance of the nanowire. A model was also proposed, capable of relating physical and electrical properties of the nanowires, as well as demonstrating the considerable influence of charged surface states on the nanowire conductance. / QC 20101101

With rapid development of light emitting device, the detection techniques of semiconductor are more and more important, which include time-resolved photoluminescence (TRPL) and optical beam induced current (OBIC) microscopy. In this thesis, we realize the carrier behaviors of active region with multiple quantum wells (MQWs) by these microscopies, and the samples are light emitting diodes (LEDs). However, PL intensity of LEDs increase but OBIC not due to external field compensates, on the other hand, reducing PL lifetime indicates the response time of device shorter with higher reverse bias.

In this research, we investigated a novel rigid-rod polymer sPBI for mono-layer polymer light emitting diode (PLED) fabrication and luminescence emission. sPBI could be a luminescent polymer with a low threshold voltage of 4.5 V and green light electroluminescence emission (530 nm). Its SO3H pendant attached to the p-phenyl ring improved electronic delocalization along the backbone resulted in a red shift of the absorption spectrum. By attaching propanesulfonated pendants to the heterocyclic moiety of intractable fully conjugated sPBI, water-soluble rigid-rod polyelectrolyte sPBI-PS(Li+) was synthesized to promote its processibility in water or common organic solvent. This water-soluble rigid-rod polyelectrolyte sPBI-PS(Li+) was fabricated for polymer light-emitting electrochemical cells (PLECs) with LiCF3SO3 (LiTf) or LiN(CF3SO2)2 (LiTfSI) dopants for investigating the influence of propanesulfonated pendants as well as dopants on the opto-electronic emission and the room-temperature DC conductivity. The effect of lithium salts (LiTf or LiTfSI) on photoluminescence color of doped sPBI-PS(Li+) films was negligible. sPBI-PS(Li+) PLECs doped with 0.41 and 1.01 wt. % of LiTfSI showed higher green light electroluminescence emission (514 nm) with a lower threshold voltage of 3.0 V and -4.6 V, respectively. Emission brightness of the sPBI-PS(Li+) PLEC did not raise upon increasing the ionic conductivity of the luminescent layer.

DC and RF magnetron co-sputtering techniques are one of the most suitable techniques in fabrication of thin films with different compositions. In this work, Al2O3 and Si/Al2O3 thin films were fabricated by using magnetron co-sputtering technique. For Al2O3 films, the stoichiometric, optical and crystallographic analyses were performed. For Si contained Al2O3 films, the formation conditions of Si nanocrystals were investigated. To do so, these thin films were sputtered on Si (100) substrates. Post annealing was done in order to clarify the evolution of Al2O3 matrix and Si nanocrystals at different temperatures. Crystallographic properties and size of the nanocrystals were investigated by X-ray diffraction (XRD) method. The variation of the atomic concentrations and bond formations were investigated with X-ray photoelectron spectroscopy (XPS). The luminescent behaviors of Si nanocrystals and Al2O3 matrix were investigated with photoluminescence (PL) spectroscopy. Finally, the characteristic emissions from the matrix and the nanocrystals were separately identified.

Luminescent materials can be found in a broad range of everyday applications. While in the seventies and eighties, the field of luminescent materials seemed to be fairly well covered, research in nineties has been revitalized both in industry and academia. Improvements over the last three decades have led to phosphor materials that operate close to their physical limits. It cannot be expected that properties such as quantum yield and spectral energy distribution will be significantly improved or that distinctly better materials will be found in the near future. Recently, there is a considerable research activity in the field of luminescent materials for lighting and displays to improve the chemical stability and to adopt the materials to the production technology. Ongoing miniaturization, lifetime improvement and spectral stability of fluorescent lamps on the one hand and brightness and contrast improvement in imaging systems on the other hand demand luminescent materials with very high stability that is invariable to operating conditions. All of the today's efficient lighting sources are based on either direct or indirect light emission from plasma discharges. During the pioneering stage, fluorescent lamp industries predominantly used mixtures of two photo luminescent materials: (Zn,Be)2SiO4.'Mn2+ having two emission maxima at 520 and 600 nm and MgW04 with 480 nm emission. The emission from these two phosphors covers the major portion of the visible spectrum. However, the compound (Zn,Be)2Si04 is hazardous to health because of its beryllium content. In 1942, Jenkins showed that Ca5(PO4)3(F,Cl):Sb,Mn was a very efficient emitter. The halophosphates emit both in the blue (Sb3+) as well as in the orange (Mn2+) spectral region, thus in addition yield white light. By carefully adjusting the ratio of Sb3+ and Mn2+ ion concentrations, a white light emitting phosphor was obtained with color temperatures ranging between 6500 and 2700K. However, the drawback of the halophosphate lamps is that it is impossible to have simultaneously high brightness and high color rendering; if the brightness is high (efficacy -80 lm W"1), the color rendering index (CRI) is of the order of 60, the CRI value can be improved up to 90, but then brightness decreases (-50 lm W"1). In 1974, another important breakthrough came in the form of compact fluorescent lamp, based on the trichromatic phosphor blend which resulted color rending values of 80-85 (color 80 lamps) at high efficiencies of 100 lm W"1. The fluorescent lamps with very high color rendering and efficiency can be obtained if three narrow band emitters with emission maxima at 450, 540 and 610 nm are employed. A typical trichromatic lamp phosphor blend comprises of (i) Sr5(PO4)3Cl:Eu2\ BaMgAl1()O,7:Eu2' as blue component, (ii) Ce0.67Tbo.33MgAl,,0,9, LaPO4,Le3\Tb3+ as green component and (iii)Y2C>3:Eiru as the red component. The color 80 lamps employ line emitters that generated light in discrete wavelength intervals. Colored objects that absorb outside these spectral regions appear with a slightly different body color when illuminated with these lamps rather than with a black body radiator such as the light bulb. For these purposes, color 90 or Deluxe lamps have been developed. The emission maximum of the blue phosphor can be shifted towards longer Wavelength by substituting BaMgAli0Oi7:Eu2+ with Sr4Ali4025:Eu2+. The red and green line emitters can be substituted by broad band emitters covering the whole spectral range. For this concept, (Ce,Gd,Tb)MgB5Oi0:Mn has been developed as a red emitter in which energy transfer from Ce3+ via Gd3+ to Mn2+ gives rise to an additional broad band at 630 nm. On the other hand, (Ba,Sr,Ca)2Si04:Eu has been developed as an alternative green-band emitter in which depending on the exact composition, the phosphor emits between 550 and 580 nm with a high quantum yield. Unfortunately, the host lattice is not stable in water, which prevents its deposition on the lamp bulb from aqueous suspensions and for environmental reasons more and more lamps producers use water as the suspending solvent in production instead of butyl acetate. Therefore, it is necessary to develop a new full color emitting phosphors, which has both thermal and chemical stability for application in luminescent lighting. The classical cathode ray tube (CRT) invented as the brown tube more than 100 years ago has developed into a remarkably mature product considering the complexity of its manufacturing process. Cathode rays are a beam of fast electrons, the accelerating voltage in a television picture tube is high (>10 kV). Basic requirements of display phosphors are stability (2000 hr operation) and emission color purity according to the standards set by the European Broadcasting Union (EBU). The blue and green phosphors are still the very cheep ZnS based materials, essentially the same ever since color-TV was introduced in fifties. On the other hand, (Zn,Cd)S, Ag+,C1" was originally used as the red phosphor however, the broad emission centered at 650 nm due to intrinsic donor-acceptor transition leads to rather low lumen equivalent as large fraction of the emission integral lies outside the eye sensitivity curve. For this and the environmental reasons, it has been replaced by the much more expensive Y2O2S:Eu with main emission lines at 612 and 628 nm. Recently, the big electronic companies are trying to enforce flat panel displays e.g. PDPs (plasma display panels) and FEDs (field emission displays). This is because of the fact that when compared to the CRT screen pigments, FED phosphors are required to operate at lower voltages and higher current densities. Although the voltages used in FEDs are only 0.1 to < 2 kV, the high-energy surface excitation on the phosphor particles causes degradation of sulfides, leaving the oxide hosts as the only favorable choice. The phosphor blends used are mixtures of SrTiO3:Pr3+ (red), Y2Si05:Tb (green) and Y2Si05:Ce (blue). However, the white light generation efficiency is very low (-5 lm W"1) and required improvement of phosphor efficacy because of its distinct advantages such as a very wide range of operational temperatures, stability under rugged conditions and wide viewing angle of emission. Similarly, in PDPs blue emitting BaMgAlioOniEu, green emitting Z^SiO^Mn and red emitting (Y,Gd)BO3:Eu are mostly used which shows a screen efficiency of about 1.5 lm W"1, just only half that of a CRT used in today's TV sets. However, the advantages of PDPs over CRTs are that it is not sensitive towards the display manufacturing process, which includes high temperature annealing up to about 600°C and it is stable under the harsh conditions of a Ne/Xe plasma used in PDPs (ion bombardment, VUV radiation). This puts pressure on the development of phosphor for maximum brightness and high stability to replace completely the classical CRTs. On the other hand, the invention of the blue-light emitting diode (LED) based on GaN can be regarded as a triumph of materials chemistry. In principle, it is possible to vary the emission wavelength of blue GaN-based LEDs between 370 nm (band-gap of pure GaN) and 470 nm by increasing the indium (In) content in InGaN devices. Assuming a conversion from the incident light by a phosphor material emitting at 555 nm, InGaN is coated with (Yi.xGdx)3(Ali-yGay)5Oi2:Ce (YAG:Ce) which has broad yellow band varying between 510 and 580 nm. This allows the adjustment of white color temperature from 8000 down to 3000 K. Recently, S^SiCU and S^SiOs have attracted current interest due to their potential applications in developing white light-emitting-diodes (LEDs) because GaN (400 nm chip)-coated with Sr2Si04:Eu2+ or Sr3SiC>5;Eu2+ exhibits better luminous efficiency than that of the industrially available product such as InGaN (460 nm chip)-coated with YAG:Ce. However, the major drawback of this combination is the strongly decreasing overall efficiency upon lowering the color temperature. This can be solved by using a phosphor material that has sufficient absorption at the emission wavelength of the blue diode, the quantum yield should be high under UV/Vis excitation and the FWHM of the emission band should be as small as possible in order to achieve high luminous output. The search for stable inorganic rare-earths phosphors with high absoiption in the near UV/blue spectral region is therefore an attractive research work. Since luminescence materials are a key component for lighting and display concept, research in the field of rare-earths doped oxide phosphors is carried out. Although state-of-the-art materials fulfill most requirements, improvements are still necessary to further boost the efficiency of the phosphor materials. Since it is not expected that materials will be found that perform better than the already established phosphor, the present work concentrates on the improvements of the phosphor by modifying the chemical and niicrostructurai features as well as the crystal structure. Chapter I gives a brief introduction to luminescence in solids, physical aspects and applications. Chapter II describes the synthesis and various experimental techniques employed in the investigation. Chapter III deals with photoluminescence and energy transfer involving charge transfer states in Sr2-xLnxCe04+x/2 (Ln = Eu and Sm) leading to an efficient full color emitting phosphor for luminescent lighting. Chapter IV and V describe charge transfer transition involving interface states associated with transitional nanophaseprecipitates leading to photoluminescence enhancement of SrTiO3:Pr3+,Al3+ and SrAli2Oi9:Pr3+,Ti4\ The light induced charge transfer leading to changing oxidation state of Eu in Sr2Si04 involving transient crystal structure results an efficient material for optical storage is presented in Chapter VI.Photoluminescence due to efficient energy transfer from Ce3+ to Tb3+ and Mn2t in SnAlioSi02o leading to an efficient phosphor for FEDs is presented in Chapter VII. Chapter VIII describes charge transfer transition involving trap states leading to long phosphorescence in SrAl2-xBxO4 (0<x<0.2) and Sr4Al14.xBxO25 (0.1<x<0.4) co-doped with Eu2+ and Dy3+. Chapter IX presents the role of particle size on the charge transfer associated luminescence of GdVO4:Ln3+ (Ln = Eu and Sm). A summary of the important findings and the conclusions arrived on the basis of results from these investigations are presented at the end of the thesis.

The present thesis is concerned with solid solutions of organic dyes. The organic molecules are incorporated in both optically inert or active and in rigid or flexible matrices, respectively. Exclusively thin films prepared by physical vapor deposition are studied. The optical response of the systems, in dependence on their structure and on the matrix nature, is investigated by means of absorption and luminescence spectroscopy. In the first part, perylene and 2,2-difluoro-1,3,2-dioxaborine derivatives, and Alq3 (tris(8-hydroxyquinoline) aluminium) embedded in the optically inactive SiO2 and polyimide hosts are studied. For the system dye molecules/SiO2 matrix, two sample preparation approaches, co-deposition and layer-by-layer, are compared. It is demonstrated that the luminescence properties of the mixed layers are affected by dye distribution and thin film composition. The photoluminescence quantum efficiency is strongly influenced by dye aggregation and Föster transfer. Therefore, effective separation and isolation of dye molecules in the matrix results in increased PL efficiency. Furthermore, it is established that layer-by-layer growth mode assures more homogeneous dye distribution. The spectroscopic studies also show that, since dye and matrix condense successively in time, luminescence losses due to thermal degradation of molecules are reduced. Hence, the film structure can be optimized with regard to high absorption and luminescence quantum efficiency. The experimental findings suggest that the luminescent properties of the embedded dyes are influenced by the nature of the host environment as well. In the rigid SiO2 matrix, it is possible to observe isolated facial Alq3 molecules with distinctive blue luminescence. In contrast, in the &amp;quot;soft&amp;quot; organic polyimide matrix Alq3 exhibits ordinary green luminescence. Thus, the structural properties of the host, rigidity and density, are found to be crucial for preservation of the facial Alq3 molecules. It is further demonstrated that the immobilization of molecules in the rigid SiO2 matrix in combination with layer-by-layer growth results in improved photostability. In polyimide matrix, the behavior of incorporated molecules is governed by the morphological changes of the host. These changes are defined by the curing procedure, needed for imidization, and give rise to a certain film structure. In the second part, special attention is paid on the luminescence response of dispersed DCM (4-dicyanomethylene-2-methyl-6-(p-dimethylaminostyril)-4H-pyran) and rubrene (5,6,11,12-tetraphenyl-naphthacene) molecules in the optically active Alq3 matrix. The observed enhancement of luminescence intensity and alteration of emitted color are favorable for application of the doped Alq3 films as converter layers in combination with commercial blue light emitting diodes in luminescence conversion devices. It is demonstrated that by optimization of the conversion layer parameters white light generation can be achieved. The devices are characterized by high conversion efficiency and Lambertian distribution of the emitted light. However, they lack sufficient stability with regard to practical applications.

Ce manuscrit de thèse porte sur l'étude et la compréhension des boites quantiques InAs sur substrat InP, travail mené en collaboration avec l'université technique (TU) de Berlin en Allemagne, et l'université catholique (KU) de Leuven en Belgique, dans le cadre du réseau d'excellence européen SANDIE.<br /><br />Le chapitre 0 est une introduction détaillée à la physique des boites quantiques. Cette partie mets en évidence les motivations et les enjeux scientifiques liés à l'étude des boites quantiques, et en particulier dans le système InAs/InP. Les principes de fabrication des boites quantiques par épitaxie par jet moléculaire sont également détaillés.<br /><br />Le chapitre 1 présente une étude théorique des boites quantiques sur substrat InP. Ces boites sont tout d'abord étudiées à l'aide d'une méthode de calcul de type k•p à huit bandes. L'influence de la composition de la boite quantique (InAs ou InAsSb), ainsi que celle de l'orientation du substrat ((311)B ou (100)) sur les propriétés optiques des ces boites est ainsi analysée. Des solutions sont ainsi proposées pour l'utilisation de telles boites quantiques comme sources laser pour les applications télécom (1.5 µm), ou encore pour la détection de gaz, ou les transmissions en espace libre (entre 2 et 5 µm). <br /><br />Dans le chapitre 2, les boites quantiques sont étudiées expérimentalement. De nombreuses techniques de spectroscopie ont été utilisées (photoluminescence, magnéto-photoluminescence, spectroscopie d'absorption) afin de déterminer les constantes fondamentales de nos boites quantiques. Ainsi, le coefficient d'absorption, le rayon de Bohr de l'exciton, sa masse effective et son énergie de liaison sont mesurés dans le système InAs/InP, ainsi que les écarts énergétiques entre les états fondamentaux et excités de boites quantiques. Il est ainsi démontré expérimentalement que l'utilisation d'un alliage quaternaire InGaAsP est plus adapté pour les applications laser que l'alliage binaire InP. <br /><br />Le couplage latéral de boites quantiques est étudié à la fois expérimentalement et théoriquement dans le chapitre 3. Lorsque l'alliage quaternaire InGaAsP est utilisé avec des conditions de croissance optimisées, une très haute densité de boites quantiques peut être obtenue, avec une bonne organisation de ces boites dans le plan de croissance. Une nouvelle méthode de calcul dans l'espace réciproque a été développée afin de simuler un tel super-réseau de boites quantiques. Ces calculs prédisent qu'il peut exister un couplage latéral entre ces boites quantiques pour de si fortes densités. Des expériences de magnéto-photoluminescence, de photoluminescence et d'électroluminescence sont utilisées afin de mettre en évidence ce couplage latéral. L'influence de ce couplage sur la redistribution des porteurs de charge dans les composants laser est discutée. Il est montré qu'un régime de couplage judicieusement choisi permet d'améliorer les performances des lasers à boite quantique.<br /><br />Finalement, des expériences pompe-sonde sur les boites quantiques InAs/InP sont présentées dans le chapitre 4. Les temps de vie radiatifs des niveaux d'énergie de boites quantiques sont mesurées. Une interprétation de ces mesures est donnée en terme de durée de vie de l'exciton et du biexciton dans nos boites quantiques, et les conséquences de ces mesures sur le comportement dynamique des composants lasers à base de boites quantiques sont discutées.<br /><br />Des conclusions et des perspectives à ce travail de thèse sont enfin présentées, ainsi que la bibliographie utilisée comme support et point de départ de ce travail de thèse.

Thesis (Ph. D.)--University of Canterbury, 2009. / Typescript (photocopy). Includes bibliographical references (p. 241-266). Also available via the World Wide Web.

Το αντικείμενο της παρούσας Διδακτορικής Διατριβής είναι η αλληλεπίδραση της ηλεκτρομαγνητικής ακτινοβολίας με νανοδομημένους ημιαγωγούς. Για το σκοπό αυτό σχεδιάστηκε και κατασκευάστηκε μια διάταξη καταγραφής φασμάτων φωτοφωταύγειας, συναρτήσει της θερμοκρασίας. Τα δείγματα που εξετάστηκαν περιέχουν νανοκρυστάλλους του πυριτίου. Ερευνήθηκαν δυο διαφορετικές προσεγγίσεις για την παρασκευή τέτοιων δειγμάτων. Η πρώτη αφορά την θερμική αποσύνθεση του SiO σε θερμοκρασίες άνω των 850 ºC και οδηγεί στην παρασκευή δειγμάτων με νανοκρυστάλλους πυριτίου σε μια μήτρα από οξείδιο του πυριτίου. Η δεύτερη είναι ο σχηματισμός πορώδους πυριτίου μέσω ανοδικής ηλεκτροδιάβρωσης, τόσο σε συνθήκες ανοδικής πόλωσης, όσο και σε συνθήκες ανοιχτού κυκλώματος. Τα δείγματα που προήλθαν από θερμική αποσύνθεση του SiO επιδεικνύουν έντονη φωτοφωταύγεια, σε θερμοκρασία περιβάλλοντος, στο εγγύς υπέρυθρο και σε ενέργειες μεγαλύτερες του ενεργειακού χάσματος του πυριτίου (1.12 eV), ως αποτέλεσμα της εξιτονικής επανασύνδεσης υπό συνθήκες κβαντικού εντοπισμού. Τα φάσματα φωτοφωταύγειας και ο δομικός χαρακτηρισμός, έδωσαν χρήσιμες πληροφορίες σχετικά με την αλληλεπίδραση και προέλευση της εκπεμπόμενης ακτινοβολίας, της δομής και κινητικής του SiO που υπόκειται σε θερμική αποσύνθεση. Με την παρασκευή πορώδους πυριτίου, αναπτύχθηκε μια νέα μεθοδολογία για την ανάπτυξη μικροδομών πορώδους πυριτίου σε συνθήκες ανοιχτού κυκλώματος, με απολύτως ελεγχόμενη γεωμετρία και ιδιότητες φωτοφωταύγειας. Η μεθοδολογία αυτή είναι ενδιαφέρουσα για την ανάπτυξη μιας πληθώρας μικρο-ηλεκτρομηχανικών συστημάτων βασισμένα στο πορώδες πυρίτιο, όπως οπτοηλεκτρονικές διατάξεις και αισθητήρες. / The objective of this Thesis is the study of the interaction of electromagnetic radiation with nanostructured semiconductors. For this purpose we have designed and constructed a photoluminescence setup for the recording of spectra at various temperatures. The samples that have been investigated contain nanocrystals of silicon. We investigated two different approaches for the synthesis of such samples. The first one involves the thermal decomposition of SiO at temperatures above 850 ºC and results in silicon nanocrystals embedded in silicon oxide matrix. The second is the formation of porous silicon using the anodic dissolution of silicon under external anodic bias, as well as under open circuit potential conditions. Samples prepared by thermal decomposition of SiO exhibit strong photoluminescence, at room temperature, in the near infrared and at energies higher than the band gap of bulk silicon (1.12 eV), as a result of excitonic recombination under quantum confinement conditions. The recorded spectra and the structural characterization, gave us valuable information about the interaction, the origin of the emitted radiation, the structure and the kinetics of SiO undergoing thermal decomposition. The investigations concerning the formation of porous silicon, resulted in the development of a novel technique for the formation of porous silicon microstructures under open circuit potential conditions. The microstructure geometry and photoluminescence characteristics can be tuned. This technique is interesting for the fabrication of a variety of micro-electromechanical systems, based on porous silicon, such as optoelectronic devices and sensors.

Nanostructured silicon carbide (SiC) is considered today as a good alternative to the conventional materials for various multidisciplinary applications. In this thesis, SiC nanostructures were elaborated by means of electrochemical etching and laser ablation techniques. The first part of the thesis clarifies size-dependence of optical properties as well as importance of local-field effects onto the photoinduced electronic transitions of SiC nanostructures. In the second part of the thesis strong 15-fold photoluminescence enhancement of SiC nanoparticles is ensured by their near-field interactions with multipolar localized plasmons. Further, 287-fold and 72-fold plasmon-induced enhancement factors of two-photon excited luminescence and second harmonic generation is achieved, respectively. The main physical mechanisms responsible for the observed effects were described by three-dimensional finite-difference time domain simulations. Finally, the coupling effect of luminescent SiC nanoparticles to plasmonic nanostructures is used in the enhanced labelling of biological cells on the planar structures. As a perspective, colloidal plasmonic (Au@SiO2)SiC nanohybrids were elaborated and characterized.