In this thesis, the structural, optical, and electrical properties of wurtzite MgxZn1-xO:Al and MgxZn1-xO:Ga thin films have been investigated in dependence on Mg and dopant concentration. Among the transparent conductive oxides (TCOs), ZnO based compounds have gained renewed interest as a transparent electrode for large scale applications such as defroster windows, at panel displays, touch screens, and thin film solar cells due to low material and processing cost, non-toxicity, and suitable physical properties. In general, these applications require transparent electrodes with lowest possible resistivity of rho < 10^-3 Ohmcm and lower [1]. Recently, it has been reported that Ga and Al doped ZnO thin films can be deposited with respective resistivity of 5x10^-5 Ohmcm [2] and 3 x10^-5 Ohmcm [3] which are similar to the data obtained for other practical TCOs, i.e. the resistivity of about 4x 10^-5 Ohmcm for Sn doped In2O3 (ITO) thin films [4]. Moreover, the bandgap of ZnO can be increased by alloying with Mg offering band alignment between transparent electrode and active (or buffer) layer of the device, e.g. Cu(In,Ga)Se2 solar cells [5]. The tunable bandgap of these transparent electrodes can further increase the efficiency of the devices by avoiding energy losses in the interface region of the layers. From this point of view, this work has been aimed to investigate the doping efficiency and limits in transparent conductive (Mg,Zn)O alloys. For this purpose, the samples investigated in this work have been grown by pulsed-laser deposition (PLD) using a novel, continuous composition spread method (CCS). In general, this method allows to grow thin films with lateral composition gradient(s) [6, 7]. All MgxZn1-xO:Al and MgxZn1-xO:Ga thin films have been deposited on 2-inch in diameter glass, c- or r-plane sapphire substrates using threefold segmented PLD targets in order to grow thin films with two perpendicular, lateral composition gradients, i.e. the Mg composition is varied in one direction whereas the Al/Ga concentration is varied in a perpendicular direction [7, 8]. In order to investigate the influence of the temperature, samples grown at different substrate temperatures in the range of 25 to 600 C were investigated. The optical and electrical measurements have been carried out on (5x 5)mm^2 samples that were cut from the CCS wafers along the respective composition gradients, i.e. Mg and Al/Ga contents. Subsequently, physical properties of thin films have been analyzed for a large range of Al/Ga content between 0.5 and 7 at.%, which corresponds to doping concentrations between 2x 10^20 and 3x 10^21 cm^-3, for different Mg contents x(Mg) ranging from 0.01 to 0.1. It has been found that practically the limiting the dopant concentrations is about 2 x10^21 cm^-3. Further, the electrical data suggests, that the compensating intrinsic defect is doubly chargeable hinting to the zinc vacancy (V_Zn) as microscopic origin. Increasing the dopant concentration above 2 x10^21 cm^-3 leads to a degradation of electrical and structural properties [8]. Further, the influence of growth and annealing temperatures on structural, electrical and optical properties of the films has been studied. For that purpose, Al and Ga doped (2.5 at.% = 1x10^21 cm^-3) Mg0.05Zn0.95O thin films have been chosen from CCS samples grown at T_g = (25 - 600) C . For both doping series, the samples grown at higher temperatures exhibit better crystalline quality compared to the samples grown at lower growth temperatures. As a result, samples grown at higher temperatures reveal higher Hall mobility. For the Al-doping series, the highest free charge carrier density of n = 8.2x 10^20 cm^-3 was obtained for an Mg0.05Zn0.95O:Al thin film grown at 200 C, with corresponding Hall mobility of mu = 13.3 cm^2/Vs, a resistivity of rho = 5.7x10^-4 Ohmcm, and optical bandgap of E_g = 3.8 eV. Interestingly, the free charge carrier density of n = (5 - 8) x 10^20 cm^-3 for samples grown with T_g > 300 C is clearly higher than the value of n = 1.25 x 10^20 cm^-3 that was obtained for the high temperature grown sample, i.e. at T_g = 600 C. Furthermore, for all T_g, Al-doped films have a higher doping efficiency than the Ga-doped counterparts. In order to look deeper into the microscopic origin of this behavior, the samples were post-annealed in vacuum at 400 C. Experimental results showed that the free charge carrier density of Al-doped samples first decreased and saturated afterward with increasing annealing time. On the other hand, the free charge carrier density of the Ga-doped samples first slightly increased and saturated with increasing annealing time. For both doping series, the saturation value of n ~ 1 x 10^20 cm^-3 was very close to the data that has been observed for (i) high temperature grown samples and (ii) the solubility limit of Al in ZnO of 0.3 at.% = 1.2x 10^20 cm^-3, that has been determined by Shirouzu et al. for high temperature grown (T_g > 600 C) Al-doped ZnO [9]. Correspondingly, the optical bandgap also changed, i.e. increased (decreased) for Al- (Ga-) doping series, and approached a constant value of 3.5 0 +- 0.1 eV which is explained by generation of acceptor-like compensating defects, and the solubility limit of the dopants. From XRD data, no secondary phases were found for as-grown and post-annealed films. However, the slight improvement of crystalline quality has been observed on post-annealed samples. Further, it has been shown that the growth and annealing temperatures are important as they strongly affect the metastable state of the solid solution that samples grown at low temperature represent. The low solubility limit of the dopants, i.e. 0.3 at.% for Al in ZnO under equilibrium condition, can be increased by preparing samples by non-equilibrium growth techniques [10]. This is also consistent with experimental results of this work that Al- as well as Ga-doped metastable ZnO and (Mg,Zn)O thin films can be prepared with highest possible doping efficiency for the dopant concentration up to 2.5 at.% when growth or annealing temperatures below 400 C are used.

O protótipo de um detector de nêutrons térmicos portátil foi desenvolvido no Instituto de Pesquisa Energéticas e Nucleares (IPEN-CNEN/SP), utilizando um fotodiodo de Si do tipo PIN associado a um filme de boro enriquecido. O filme de boro foi fabricado por meio da técnica de Deposição a Laser Pulsado, considerando duas possibilidades para depositar o boro: deposição direta do boro na face do fotodiodo e deposição na lâmina de vidro. Foram desenvolvidos dois protótipos, no primeiro foi possível ler apenas o sinal elétrico do sistema fotodiodo-boro no qual o filme está depositado na lâmina de vidro. Para aprimorar a resposta do sistema de detecção, outro circuito foi desenvolvido e permitiu contar nêutrons em ambas as situações tanto do filme na lamínula quanto do filme direto no fotodiodo. A caracterização dos protótipos foi feita via irradiação de feixes de nêutrons predominantemente térmicos e frios, por meio de quatro experimentos principais: reposta do sistema ao fluxo de nêutrons, teste de linearidade, resposta angular e o teste de reprodutibilidade. Os protótipos apresentaram uma resposta linear à variação do fluxo, reprodutibilidade, e a resposta angular não foi isotrópica. A eficiência intrínseca em porcentagem do protótipo 1 para um espectro de nêutrons predominantemente térmicos e frios foi (1,17 &plusmn; 0,01) % e (1,37 &plusmn; 0,01) %, respectivamente. No protótipo 2 foram feitas medições de nêutrons com os dois sistemas fotodiodo-boro (lâmina de vidro, direto no fotodiodo), porém nas medidas com o boro direto no sensor houve um aumento significativo no ruído eletrônico. A eficiência intrínseca do protótipo 2 para os nêutrons frios foi de (5,2 &plusmn; 0,4) %. / A portable thermal neutron detector prototype, using a silicon photodiode type PIN coupled to a boron converter, was developed at Nuclear and Energy Research Institute (IPEN-CNEN/SP). The boron layers were made by Pulsed Laser Deposition method using two configurations: directly deposited on the surface of photodiode and at a glass surface. Two prototypes were made in this study using two different associated electronics, in the first prototype is only possible reads signs from the photodiode coupled to boron film and in the second one reads both types of configurations (directly on the photodiode, boron glass). The prototypes were characterized using thermal and cold neutron beam. Four experiments were performed: response of the detection system at neutron beam, linearity test, angular response and repetitive test. The prototypes present a linear behavior, were reproducible and the angular response of the prototypes was not isotropic. The values of intrinsic efficiency from the prototype 1 for thermal and cold neutron were respectively: (1.17 &plusmn; 0.01) % e (1.37 &plusmn; 0.01) %. In the prototype 2 it was performed an experiment for compare the read out in the detection system for the two possible configuration of system photodiode-boron, in the situation that the boron is part integrant of the system there was an significant increase in the electronic noise, therefore the characterization of this prototype were made using the boron film coupled to the photodiode, and intrinsic efficiency for cold neutron beam was (5.2 &plusmn; 0.4) %.

The goal of this dissertation is to develop a model relating LENSâ„¢ process parameters to deposited thickness, incorporating the effect of substrate heating. A design review was carried out, adapting the technique of functional decomposition borrowed from axiomatic design. The review revealed that coupling between the laser path and laser power caused substrate heating. The material delivery mechanism was modeled and verified using experimental data. It was used in the derivation of the average deposition model which predicted deposition based on build parameters, but did not incorporate substrate heating. The average deposition model appeared capable of predicting deposited thickness for single line, 1- layer and 2-layer builds, performing best for the 1- layer builds which were built under essentially isothermal conditions. This model was extended to incorporate the effect of substrate heating, estimated using an energy partition approach. The energy used for substrate heating was modeled as a series of timed heating events from an instantaneous point heat source along the path of the laser. The result was called the spatial deposition model, and was verified using the same set of experimental data. The model appeared capable of predicting deposited thickness for single line, 1- layer and 2- layer builds and was able to predict the characteristic temperature rise near the borders as the laser reversed direction.

Growing resistance of bacteria towards antibiotics resulted in extensive research effort for development and application of new materials and techniques. Due to their unique properties, graphene quantum dots (GQDs) have attracted much attention and are a promising material with potential applications in many fields. One use of GQDs is as a photodynamic therapy agent that generates singlet oxygen. In this work, GQDs synthesized by focusing nanosecond laser pulses into a mixture of benzene and nickel(II) oxide were combined with methylene blue (MB) to eradicate Gram-negative Escherichia coli and Gram-positive Micrococcus luteus. Theoretical calculation of pressure evolution was calculated using the standard finite difference method. Detailed characterizations were performed with transmission electron microscopy (TEM), scanning electron microscopy (SEM), Fourier-transform infrared (FTIR), UV-Visible (UV-Vis), and photoluminescence (PL) spectra. Furthermore, singlet oxygen generation from MB-GQD mixture was investigated by measuring the rate of 9,10-anthracenediyl-bis(methylene) dimalonic acid photobleaching at 400 nm. Combining MB with GQDs caused enhanced singlet oxygen generation, leading to improved bacterial deactivation rate. The (3-(4,5-dimethylthiazol-2- yl)-2,5-diphenyltetrazolium bromide) (MTT) assay was used to determine if GQDs in dark conditions caused human cellular side-effects and affected cancer and noncancer cellular viability. We found that even high concentrations of GQDs do not alter viability under dark conditions. These results suggest that the MB-GQD combination is a promising photodynamic therapy agent that may be useful when antibiotics resistance is present.

The layered iridates such as Sr2IrO4 and Sr3Ir2O7, have attracted substantial attention due to their novel electronic states originating from strong spin-orbit coupling and electron-correlation. Recent studies have revealed the possibilities of novel phases such as topological insulators, Weyl semimetals, and even a potential high-Tc superconducting state with a d-wave gap. However, there are still controversial issues regarding the fundamental electronic structure of these systems: the origin of the insulating gap is disputed as arising either from an antiferromagnetic ordering, i.e. Slater scheme or electron-correlation, i.e. Mott scheme. Moreover, it is a formidable task to unveil the physics of layered iridates due to the limited number of available materials for experimental characterizations. One way to overcome this limit and extend our investigation of the layered iridates is using metastable materials. These materials which are far from their equilibrium state, often have mechanical, electronic, and magnetic properties that different from their thermodynamically stable phases. However, these materials cannot be synthesized using thermodynamic equilibrium processes. One way to synthesize these materials is by using pulsed laser deposition (PLD). PLD is able to generate nonequilibrium material phases through the use of substrate strain and deposition conditions. Using this method, we have synthesized several thermodynamically metastable iridate thin-films and have investigated their electronic and optical properties. Synthesizing and investigating metastable iridates opens a path to expand the tunability further than the ability of the bulk methods. This thesis consists of four studies on metastable layered iridate thin film systems. In the first study, three-dimensional Mott variable-range hopping transport with decreased characteristic temperatures under lattice strain or isovalent doping has been observed in Sr2IrO4 thin films. Application of lattice strain or isovalent doping exerts metastable chemical pressure in the compounds, which changes both the bandwidth and electronic hopping. The variation of the characteristic temperature under lattice strain or isovalent doping implies that the density of states near the Fermi energy is reconstructed. The increased density of states in the Sr2IrO4 thin films with strain and isovalent doping could facilitate a condition to induce unprecedented electronic properties, opening a way for electronic device applications. In the second study, the effects of tuning the bandwidth via chemical pressure (i.e., Ca and Ba doping) on the optical properties of Sr2IrO4 epitaxial thin films has been investigated. Substitution of Sr by Ca and Ba ions exerts metastable chemical pressure in the system, which changes both the bandwidth and electronic hopping. The optical conductivity results of these thin films suggest that the two-peak-like optical conductivity spectra of the layered iridates originates from the overlap between the optically-forbidden spin-orbit exciton and the inter-site optical transitions within the Jeff = ½ band, which is consistent with the results obtained from a multi-orbital Hubbard model calculation. In the third study, thermodynamically metastable Ca2IrO4 thin- films have been synthesized. Since the perovskite structure of Ca2IrO4 is not thermodynamically stable, its bulk crystals do not exist in nature. We have synthesized the layered perovskite phase Ca2IrO4 thin- films from a polycrystalline hexagonal bulk crystal using an epitaxial stabilization technique. The smaller A-site in this compound compared to Sr2IrO4 and Ba2IrO4, increases the octahedral rotation and tilting, which enhance electron-correlation. The enhanced electron-correlation is consistent with the observation of increased gap energy in this compound. This study suggest that the epitaxial stabilization of metastable-phase thin-films can be used effectively for investigating complex-oxide systems. Finally, structural, transport, and optical properties of tensile strained (Sr1-xLax)3Ir2O7 (x = 0, 0.025, 0.05) thin-films have been investigated. While high-Tc superconductivity is predicted in the system, all of the samples are insulating. The insulating behavior of the La-doped Sr3Ir2O7 thin-films is presumably due to disorder-induced localization and ineffective electron-doping of La, which brings to light the intriguing difference between epitaxial thin films and bulk single crystals of the iridates. These studies thoroughly investigate a wide array of novel electronic and optical phenomena via tuning the relative strengths of electron correlation, electronic bandwidth, and spin-orbit coupling using perturbations such as chemical doping, and the stabilization of metastable phases in the layered iridates.

In recent years laser technology has increasingly developed with the use of fiber lasers and this has provided the possibility to implement different techniques in the defense industry. LADAR is at the forefront of these techniques. Fiber lasers constitute a perfect source for LADAR systems due to their excellent robustness, compact size and high-power generation capability. In this study we will explore the development of a pulsed fiber laser source for a LADAR system that can obtain high resolution 3D images in eye-safe region. A high power, all fiber integrated erbium system with strictly single mode operation in eye-safe region based on MOPA (master oscillator power amplifier) configuration with seed source and amplifier part was developed. Both the use of an actively mode locked laser with erbium doped fiber and fiber coupled modulated distributed feedback diode laser were investigated as seed sources for the amplifier part. Both erbium doped single clad fiber and erbium-ytterbium doped double clad gain fiber were used in this amplifier system. After amplification of the actively mode locked laser, 12 W of average optical power was obtained through single mode fiber with 1ns pulse duration at 10 MHz which corresponds to 1.2 kW peak power. For the fiber coupled DFB diode laser, 9.5W average power was obtained with around 8 ns duration pulses at 100 kHz and about 9.2 W average power was also obtained with around 700 ps duration pulses at 1 MHz through strictly single mode fiber at the output of the same amplifier system as was used in the actively mode locked seed source. In both cases calculated peak power was around 10 kW v which is estimated as the highest peak power for an all fiber integrated system with single mode operation. The development of such a fiber system with high power capability, compact size and free of misalignment is expected to be useful for LADAR application as well as other areas such as eye surgery, 3D silicon processing or any other material processing applications.

Fiber lasers represent the state-of-the-art in laser technology and hold great promise for a wide range of applications because they have a minimum of exposed optical interfaces, very high efficiency, and are capable of exceptional beam quality. In the near future, the most important markets such as micromachining, automotive, biomedical and military applications will begin to use this technology. The scope of this thesis is to design and develop a short picosecond pulsed fiber laser using rare-earth doped fiber as a gain medium. The proposed master oscillator power amplifier (MOPA) will be used to generate pulses with high repetition rates. In this study, first we explain the basic theoretical background of nonlinear optics and fiber laser. Then, the numerical simulation will be introduced to explain how the laser system design and optimization. The simulation is based on nonlinear Schr&ouml / dinger equation with the method of split-step evaluation. The brief theoretical background and simulation results of the laser system will be shown. Finally, the experimental study of the developmental fiber laser system that comprises an oscillator, preamplifier and power amplifier will be discussed.

Thesis (Ph. D.)--University of Alabama at Birmingham, 2007. / Title from PDF t.p. (viewed Feb. 3, 2010). Additional advisors: Derrick R. Dean, Sergey B. Mirov, Sergey Vyazovkin, Mary Ellen Zvanut. Includes bibliographical references (p. 122-145).

<p>An explosion in the growth of organic materials used for optoelectronic devices is linked to the promise that they have demonstrated in several ways: workable carrier mobilities, ease of processing, design flexibility to tailor their optical and electrical characteristics, structural flexibility, and fabrication scalability. However, challenges remain before they are ready for prime time. Deposition of these materials into ordered thin films requires that they be cast from solutions of organic solvents. Drawbacks of solution-casting include the difficulty of producing layered films without utilizing orthogonal solvents (or even with orthogonal solvents), the difficulty in controlling domain sizes in films of mixed materials, and the lack of parameter options used to control the final properties of thin films. Emulsion-based, resonant infrared, matrix-assisted pulsed laser evaporation (RIR-MAPLE) is a thin film deposition technique that is demonstrated to provide solutions to these problems.</p><p>This work presents fundamental research into the RIR-MAPLE process. An investigation of the molecular weight of deposited materials demonstrates that emulsion-based RIR-MAPLE is capable of depositing polymers with their native molecular weights intact, unlike other laser deposition techniques. The ability to deposit multilayer films with clearly defined interfaces is also demonstrated by cross-sectional transmission electron microscopy imaging of a layered polymer/quantum dot nanocomposite film. In addition, trade-offs related to the presence of surfactant in the target, required to stabilize the emulsion, are articulated and investigated by x-ray diffraction, electrical, optical, and surface characterization techniques. These studies show that, generally speaking, the structural, optical and electrical properties are not significantly affected by the affected by the presence of surfactant, provided that the concentration within the target is sufficiently low. Importantly, the in-plane mobility of RIR-MAPLE devices, determined by organic field effect transistor (OFET) characterization, rivals that of spin-cast devices produced under similar conditions. </p><p>This work also presents results of emulsion-based RIR-MAPLE deposition applied to optical coatings (gradient-refractive index antireflection coating based on porous, multilayer films) and optoelectronic devices (organic photovoltaics based on the polymer, P3HT, and small molecule, PC61BM, bulk heterojunction system). The optical coating demonstrates that RIR-MAPLE is capable of producing nanoscale domain sizes in mixed polymer blends that allow a film to function as an effective medium relevant to devices in the visible spectrum. Moreover, bulk heterojunction organic photovoltaic (OPV) devices that require nanoscale domains to function effectively are achieved by co-deposition of P3HT and PC61BM, achieving a power conversion efficiency of 1.0%, which is a record for MAPLE-deposited devices. </p><p>Results of these studies illuminate unique capabilities of the RIR-MAPLE process. Multilayer films are readily fabricated to create true bilayer OPV structures. Additionally, true gradient thin films are created by varying the ratio of two materials, including two-polymer films and a film consisting of a polymer and a small molecule, over the course of a single deposition.</p> / Dissertation

Doping allows us to modify semiconductor materials for desired properties such as conductivity, bandgap, and / or lattice parameter. A small portion replacement of the highly mismatched isoelectronic dopants with the host atoms of a semiconductor can result in drastic variation of its structural, optical, and / or electronic properties. Here, the term "mismatch" describes the properties of atom size, ionicity, and / or electronegativity. This thesis presents the fabrication of two kinds of highly mismatched semiconductor alloys, i.e., Ge(1-x)Sn(x) and GaAs(1-x)N(x). The structural and optical properties of the prepared Ge(1-x)Sn(x) and GaAs(1-x)N(x) have been investigated. The results suggest an efficient above-solubility doping induced by non-equilibrium methods of ion implantation and ultrashort annealing. Pulsed laser melting promotes the regrowth of monocrystalline Ge(1-x)Sn(x), whereas flash lamp annealing brings about the formation of high quality GaAs(1-x)N(x) with room temperature photoluminescence. The bandgap modification of Ge(1-x)Sn(x) and GaAs(1-x)N(x) has been verified by optical measurements of spectroscopic ellipsometry and photoluminescence, respectively. In addition, effective defect engineering in GaAs has been achieved by flash lamp annealing, by which a quasi-temperature-stable photoluminescence at 1.3 µm has been obtained. / Dotierung ermöglicht es, die Eigenschaften von Halbleitermaterialien, wie Leitfähigkeit, aber auch Bandabstand und / oder Gitterkonstanten gezielt zu verändern. Wenn ein Halbleiter mit einer kleinen Menge unterschiedliche Fremdatome dotiert wird, kann dies in einer drastischen Modifikation der strukturellen, optischen und / oder elektronischen Eigenschaften resultieren. Der Begriff "unterschiedlich" bedeutet hier die Eigenschaften von Atomgröße, Ioniztät und / oder Elektronegativität. Diese Doktorarbeit beschreibt die Herstellung von zwei Arten von stark fehlangepassten Halbleiterlegierungen: Ge(1-x)Sn(x) und GaAs(1-x)N(x). Die strukturellen und optischen Eigenschaften von Ge(1-x)Sn(x) und GaAs(1-x)N(x) wurden untersucht. Die Ergebnisse deuten auf eine effiziente Dotierung oberhalb der Löslichkeit, induziert durch die Nicht-Gleichgewichtsverfahren Ionenimplantation und Ultrakurzzeit-Ausheilung. Gepulstes Laserschmelzen ermöglicht das Nachwachsen von monokristallinem Ge(1-x)Sn(x), während die Blitzlampenausheilung in der Bildung von GaAs(1-x)N(x) hoher Qualität mit Photolumineszenz bei Raumtemperatur resultiert. Die Änderung der Bandlücke von Ge(1-x)Sn(x) und GaAs(1-x)N(x) wurde durch die optischen Methoden der spektroskopischen Ellipsometrie und Photolumineszenz verifiziert. Darüber hinaus konnte in ausgeheiltem GaAs eine quasi-temperaturstabile Photolumineszenz bei 1,3 µm beobachtet werden.