Les matériaux multiferroïques et/ou magnétoélectriques sont riches en promesses de nouvelles applications, comme par exemple des mémoires quatre états à densité accrue ou des mémoires magnétoélectriques à faible consommation d’énergie. Ces promesses restent cependant pour l’instant lettres mortes en raison du très faible nombre de matériaux présentant ces propriétés à température ambiante, et des forts courants de fuite qu’ils présentent en couches minces. Cette thèse porte sur un matériau prometteur en termes d’applications, car magnétoélectrique et ferrimagnétique à température ambiante, le ferrite de gallium de composition Ga0.6Fe1.4O3 (GFO).Nous avons démontré la possibilité de réduire les courants de fuite et moduler à volonté le type de conduction n ou p dans les couches minces de cet oxyde transparent, semi-conducteur, et magnétique, par dopage par des ions Ni2+. Une optimisation de la croissance de GFO par pulvérisation cathodique a par ailleurs montré qu’il était possible de le déposer sous champ électrique, ce qui ouvre d’intéressantes perspectives pour l’optimisation de la polarisation électrique des couches minces. / The multiferroic and/or magnetoelectric materials are full of promises in terms of new applications, such as for example higher density four state memories or lower power consuming magnetoelectric memories. These promises are however actually put off because too few materials present these properties at room temperature and because their thin films present too high leakage currents. This thesis focusses on a room temperature magnetoelectric and ferrimagnetic material promising in terms of applications, the gallium ferrite Ga0.6Fe1.4O3 (GFO).We have demonstrated the possibility to strongly reduce the leakage currents and perfectly tune from n to p the conduction type in transparent, semi-conducting, and magnetic thin films of GFO through Ni2+ doping. The optimization of the growth of GFO thin films by sputtering has moreover shown the possibility of deposition under an electric field, which opens ways to control of the electric polarization of the films.

L'objectif de ce travail était l'élaboration par ablation laser pulsé (PLD) et la caractérisation de couches minces d'oxydes dans le système K-Nb-O, et plus précisément d'une phase de structure bronze de tungstène quadratique (TTB) sous forme de nanorods, potentiellement intéressante dans le contexte de la recherche de nouveaux piézoélectriques sans plomb. Malgré une forte compétition de croissance entre les différentes phases, l'étude approfondie des conditions de dépôt a montré la possibilité d'obtenir les phases KNb3O8, K4Nb6O17, K6Nb10,88O30 (TTB) et KNbO3, en films minces après une phase d’optimisation essentielle. Nous avons déterminé l'influence des conditions de dépôt sur la formation et la nanostructuration de ces composés en couches minces. En particulier, il a été démontré que la température et la composition de la cible PLD avaient une forte influence sur la croissance de la phase de structure TTB. Une étude plus approfondie de ces phases a révélé que toutes avaient une morphologie spécifique liée à leur structure anisotrope, que nous avons pu contrôler par la croissance épitaxiale sur les substrats SrTiO3 orienté (100) et (110). L'existence d'une activité piézoélectrique dans des couches minces de la phase TTB, mise en évidence par PFM, lui confère un intérêt certain. Cette phase TTB a également été obtenue dans le système Na-K-Nb-O, très connu pour ses propriétés piézoélectriques et ferroélectriques, ouvrant la voie sur de nouvelles recherches. / The purpose of this work was the elaboration by pulsed laser deposition (PLD) and the characterization of thin films of oxides in the K-Nb-O system, and more precisely that of a tetragonal tungsten bronze phase (TTB) as nanorods, of potential interest as a new lead free piezoelectric. In spite of a strong growth competition between the different phases, the detailed study of the deposition conditions showed that it is possible to obtain KNb3O8, K4Nb6O17, K6Nb10,88O30 (TTB ) and KNbO3 in thin films form after an important optimization step. We have determined the influence of these deposition conditions on the formation and the nanostructuration of these compounds as thin films. In particular, it was shown that the temperature and the PLD target’s composition has a strong influence on the growth of the TTB structure. A further study of these phases revealed that all have a specific morphology related to their anisotropic structure, that we have controlled by the epitaxial growth on the (100) and (110) SrTiO3 substrates. The existence of a piezoelectric activity in the TTB thin films, evidenced by PFM, gives a great interest to this phase. This TTB phase was also obtained in the Na-K-Nb-O system, well known for its piezoelectric and ferroelectric properties, opening the way to new research.

No description available.

The temperature and/or entropy of electrically polarisable materials can be altered by changing electric field E. Research into this electrocaloric (EC) effect has focussed on increasing the size of the EC effects, with the long-term aim of building a cooler with an EC material at its heart. Materials and experimental methods are briefly reviewed. A ‘resetting’ indirect route to isothermal entropy change ∆S for hysteretic first-order transitions is described. An indirect route to adiabatic temperature change ∆T, without the need for field-resolved heat capacity data, is also described. Three temperature controllers were built: a cryogenic probe for 77-420 K with ∼5 mK resolution, a high-temperature stage with vacuum enclosure for 295-700 K with ∼15 mK resolution, and a low-temperature stage for 120-400 K with electrical access via micropositioners. Automation enables dense datasets to be compiled. Single crystals of inorganic salts (NH4)2SO4 , KNO3 and NaNO2 were obtained. Applying 380 kV cm−1 across (NH4)2SO4 , it was found that |∆S| ∼ 20 J K−1 kg−1 and |∆T | ∼ 4 K, using the indirect method near the Curie temperature TC = 223 K. Without the ‘resetting’ indirect method, |∆S| ∼ 45 J K−1 kg−1 would have been spuriously found. Preliminary indirect measurements on KNO3 and NaNO2 give |∆S| ∼ 75 J K−1 kg−1 for ∆E ∼ 31 kV cm−1 near TC = 400 K and |∆S| ∼ 14 J K−1 kg−1 for ∆E ∼ 15 kV cm−1 near TC = 435 K, respectively. A cation-ordered PbSc0.5Ta0.5O3 ceramic showing a nominally first-order transition at 295 K was obtained. The Clausius-Clapeyron phase diagram is revealed via indirect measurements where |∆S| ∼ 3.25 J K−1 kg−1 and |∆T | ∼ 2 K, and direct measurements where |∆T | ∼ 2 K. Clamped samples show broadening of the field-induced transition. Epitaxial, ∼64 nm-thick SrTiO3 films were grown by pulsed laser deposition on NdGaO3 (001) substrates with a La0.67Sr0.33MnO3 bottom electrode. The indirect method gives |∆S| ∼ 8 J K−1 kg−1 and |∆T | ∼ 3.5 K near 180 K with |∆E| = 780 kV cm−1. Finite element modelling (FEM) was used to optimise the geometry of multilayered capacitors (MLCs) for EC cooling. Intrinsic cooling powers of 25.9 kW kg−1 are predicted for an optimised MLC based on PVDF-TrFE with Ag electrodes.

No description available.

The present thesis deals with Nb-Si alloy composites in both bulk and multilayer forms. The work has been divided into two parts. First part (chapter 4-6) deals with Nb based silicides binary and ternary alloys with alloying additions like Ga and Al. These alloys are synthesized by vacuum arc melting and suction casting (non-equilibrium processing techniques). The studies on intermetallic coatings of Nb-Si alloys and Nb/Si multilayer synthesized by pulsed laser deposition technique have been presented in the second part (chapter7-8). Nb-Si alloys are one of the candidate materials for the advanced structural and microelectronic applications. There are few issues with these materials like poor oxidation resistance, low fracture toughness and brittleness which need to be solved. Microstructure plays a crucial role to control these properties. The main focus of this work is to understand the process of phase transformation and thereby control the microstructure in both bulk alloys and thin films. We have also investigated in a limited manner mechanical and environmental properties of bulk alloys. This thesis is subdivided into nine chapters. After a brief introduction in the first chapter, a brief overview on Nb-Si phase diagram and literature reviews on Nb-Si based alloys are presented with emphasis on the current work in the second chapter. Literature reviews on the phase formations sequence and stability in Nb-Si alloys thin films and Nb/Si multilayers are also discussed in the same chapter. In the third chapter different experimental techniques, processing parameters and characterization tools like XRD, SEM, TEM etc. are briefly discussed. Special emphasis is given on two non-equilibrium techniques: laser deposition technique to deposit the thin film/multilayer and vacuum suction casting to produce the 3 mm diameter rods of different Nb-Si alloys. The fourth chapter discusses the microstructural aspects of Nb-Si alloys prepared by suction casting and its mechanical behavior. The samples have the compositions hypoeutectic (Nb-10at.%Si and Nb-14at.%Si), eutectic (Nb-18.7at.%Si) and hypereutectic (Nb-22at.% Si and Nb-25at.% Si). SEM microstructural analyses of all the samples clearly show the enhancement in the volume fraction of eutectic and decease in the eutectic spacings in microstructure due to large undercooling. Rod eutectic is observed in most of places with irregular eutectic a few places in all samples. First check of phases has been done by XRD in all samples. Phase confirmation using TEM showed the eutectic between Nbss and Nb3Si phases in all samples. The primary phase for hypoeutectic alloys is Nbss (dendritic structure), Nb3Si phase for eutectic composition and β-Nb5Si3 phase for hypereutectic alloys. Compositional analysis using EDS and EPMA also supported the above results. No signature of eutectoid reaction (Nb3Si→Nb+α-Nb5Si3) is observed. Mechanical properties like hardness, strength, ductility and indentation fracture toughness have been determined for above mention alloy compositions. SEM micrographs showed that silicides fractured by cleavage and Nb phase in a ductile manner during the compression tests carried out at room temperature. We attempt to explain how the above mention mechanical properties change with alloy compositions and processing. Chapter five deals with the effect of Ga addition on the microstructure and mechanical properties of the Nb-Si alloy. The composition selected for this study is Nb-20.2at.%Si-2.7at.%Ga. The results of ternary alloy have been compared with the binary alloy composition Nb-18.7at.%Si. Phase analysis has been carried out using TEM and XRD. Ga addition has suppressed the formation of Nb3Si phase and promoted the formation of β-Nb5Si3 phase. Ga addition also established the eutectic between Nbss and β-Nb5Si3, which is a metastable eutectic. Ga added ternary alloy, on suction casting, yields ultrafine eutectic with nanometer length scale (50-100nm). From the compression tests, it is concluded that the combination of ultrafine eutectic (Nbss-β-Nb5Si3) and primary β-Nb5Si3 in ternary alloy results in a high compressive strength ~2.8±0.1 GPa with 4.3% plasticity. In contrast binary alloy under identical conditions shows the compressive strength ~1.35±0.1 GPa and 0.2% plasticity. Ga addition also enhances the indentation fracture toughness from 9.2±0.05 MPa√m (binary) to 24.11±0.5 MPa√m (ternary). Composite hardness values of the ternary and binary alloys are 1064±20 Hv and 1031±20 Hv respectively. Chapter six deals with Al added Nb-Si ternary alloy. Here we have discussed microstructural and mechanical properties like in chapter 5 along with oxidation behavior for the alloy composition Nb-12.7at.%Si-9at.%Al. SEM micrograph shows the presence of primary dendrites structure with ultra fine lamellar eutectic (50-100nm). Detailed TEM studies confirm the Nbss as primary phase present in form of dendrites. These dendrites contain the plate shape precipitates of δ-Nb11Si4 (body centered orthorhombic structure) phase in Nb matrix (primary dendrites). Eutectic phases are Nbss and β-Nb5Si3. The analysis of the results indicates that Al addition promote the formation of β-Nb5Si3 phase in the eutectic. The results of this ternary composition were also compared with the binary alloy composition Nb-18.7at.%Si. Compression tests have been carried out at room and elevated temperatures to measure the strength of the material. Al added ternary alloy yields the compressive strength value 1.6±0.01 GPa whereas binary alloy yields the compressive strength value 1.1±0.01 GPa. Enhancement in indentation fractured toughness is observed in Al added ternary alloy (20.4±0.5MPa√m) compare to binary alloy (9.2±0.05 MPa√m). Thermal analysis by TGA and DTA were used to see the oxidation behavior of Al added ternary alloy. Chapter seven deals with the deposition characteristics and the TEM studies on the laser deposited Nb-Si thin films. Films were deposited on the NaCl crystals and Si single crystal substrates. The compositions chosen in this case are Nb-25at.%Si, Nb-37.5at.%Si and Nb-66.7at.%Si. These compositions correspond to the equilibrium intermetallic compounds Nb3Si, Nb5Si3 and NbSi2 respectively. In this chapter we have briefly discussed the microstructural and phase evolutions in the intermetallic coatings. The smooth films quenched from the vapor and/or plasma state show amorphous structure. The sequence of crystallization was studied by hot stage TEM experiments as well as by cross sectional TEM in the films deposited at the elevated temperatures (600oC and 700oC) on Si substrates. During the hot stage experiment, crystallization is observed in Nb-25at.%Si film around 850oC with nucleation of metastable cubic Nb3Si phase. Occasionally metastable hexagonal Nb3Si3 phase has also been observed (close to Si substrate) along with cubic Nb3Si phase in the films at elevated temperatures. For Nb-37.5at.%Si film, crystallization is observed at 800oC with the nucleation of grains of metastable hexagonal Nb5Si3 phase. Cross-sectional TEM shows the presence of hexagonal Nb5Si3 phase along with few grains of NbSi3 (equilibrium) phase in the films deposited at elevated temperatures. Hot stage experiment of Nb-66.3at.%Si film showed the onset of crystallization much earlier at 400oC and complete crystallization at 600oC. This crystallization leads to the nucleation of grains of NbSi2 phase. Films of this composition deposited at elevated temperatures showed the presence of NbSi2 and metastable hexagonal Nb5Si3 phases (occasionally). The laser ablated films, besides the film matrix also contain the micron and submicron sized spherical droplets of different sizes. These droplets travel at very high velocities and impinge on the substrate resulting in a very high rate of heat transfer during solidification from liquid state. Therefore in this work we have also studied the microstructural evolution in the droplets for each composition. The phases observed in the droplets embedded in the matrix of Nb-25 at% Si alloy film are the bcc Nb and the cubic Nb3Si (metastable phase). The droplets in the matrix of Nb-37.5 at% Si alloy showed the bcc Nb and tetragonal β-Nb5Si3 phases. The phases observed in the droplets of in the Nb-66.3at.%Si alloy are the bcc Nb, tetragonal β-Nb5Si3 and the hexagonal NbSi2 (metastable phase). Chapter eight describes the synthesis and microstructural characterization using TEM of Nb/Si multilayers. The aim of this work is to check the stability and phase formation sequence in Nb/Si multilayer. Nb/Si multilayers were first annealed at different time intervals at 600oC and at different temperatures (for 2 hours) and then characterized by the cross-sectional transmission electron microscopy. As-deposited Nb layer is crystalline while Si layer is amorphous. Microstructural and compositional evidences suggest the intermixing between the Nb and Si layers at the interfaces. Nb/Si multilayer annealed at 600oC for 1 hour, NbSi2 was identified as the first crystalline nucleating phase. However amorphous silicide layers were also observed between Nb and NbSi2 layers. Metastable hexagonal Nb5Si3 was identified as the next crystalline phase that nucleated from the amorphous silicide layers at the interfaces of Nb and NbSi2 layers. Occasionally few grains of cubic Nb3Si phase were also observed after 8 hours of annealing at 600oC. In the chapter we have compared the results to the other reported works in Nb-Si bulk diffusion couples and also thin film couples. The final chapter summarizes the major conclusions of the present work and scope of future work.

Nous présentons une étude des effets de contrainte induits par l’épitaxie dans des couches minces La1-xSrxMnO3 (LSMO) (001) (x = 0.33) pour 3 épaisseurs de films (50, 25 et 12 nm) déposés par Ablation Laser Pulsée (PLD) sur différents substrats tels que SrTiO3 (STO) (001), STO buffered MgO (001), NdGaO3 (NGO) (110) et (LaAlO3)0.3(Sr2AlTaO6)0.7 (LSAT) (001). L’étude est complétée par l’effet de la composition sur les propriétés magnétiques de couches minces de La1-xSrxMnO3 avec x=0,33 et 0,38 déposées par Epitaxie à Jets Moléculaires (MBE). Des caractérisations par diffraction de rayons X (XRD), et microscopie à force atomique (AFM), des mesures de résistivité électrique en quatre points en fonction de la température, d’aimantation par magnetometrie à SQUID (Superconducting Quantum Interference Device) et d’anisotropie magnétique par magnétométrie magnéto-optique Kerr vectorielle (MOKE) sont présentées. Les évolutions angulaires de l’anisotropie magnétique, de l’aimantation à rémanence, du champ coercitif et du champ de renversement d’aimantation ont ainsi pu être analysées pour des films épitaxiés LSMO de différentes épaisseurs. Des études en fonction de la température complètent les données. L’origine de l’anisotropie (magnétique, magnétocristalline, magnétostrictive ou liée aux effets de marches et d’angle de désorientation du substrat) est finalement discutée. / We report a quantitative analysis of thickness dependent epitaxial strain-induced effects in La1-xSrxMnO3 (LSMO) (001) (x = 0.33) thin films of thicknesses (50, 25 and 12 nm) grown on various single crystal substrates such as SrTiO3 (STO) (001), STO buffered MgO (001), NdGaO3 (NGO) (110) and (LaAlO3)0.3(Sr2AlTaO6)0.7 (LSAT) (001) by Pulsed Laser Deposition (PLD) technique. We also report the composition dependent magnetic properties of LSMO thin films with x = 0.33 and 0.38 in particular grown onto LSAT (001) substrate by Molecular Beam Epitaxy (MBE). The study mainly includes measurements such as X-ray Diffraction (XRD), Atomic Force Microscopy (AFM), temperature dependent four-probe resistivity, magnetization properties by Superconducting Quantum Interference Device (SQUID), magnetic anisotropy by Magneto-Optical Kerr Magnetometry (MOKE). Our results highlight the detailed study of angular evolution and thickness dependent magnetic anisotropy, remanence, coercivity and switching field in epitaxial LSMO thin films. Temperature-dependent studies are also performed on few selected films. We will also discuss the cause of magnetic anisotropy in LSMO films i.e., magneto-crystalline and magnetostriction anisotropy and the effects of steps or substrate mis-cut induced anisotropy.

Die vorliegende Arbeit befasst sich mit magnetischen Tunnelkontakten (magnetic tunnel junctions, MTJs) auf Basis des Oxids Zinkferrit (ZnxFe3-xO4). Dabei soll das Potential dieses Materials durch die Demonstration des Tunnelmagnetowiderstandes (tunnel magnetoresistance, TMR) in zinkferritbasierten Tunnelkontakten gezeigt werden. Dazu wurde ein Probendesign für MTJs auf Basis der „pseudo spin valve“-Geometrie entwickelt. Die Basis für dieseStrukturen ist ein Dünnfilmstapel aus MgO (Substrat) / TiN / ZnxFe3-xO4 / MgO / Co. Dieser ist mittels gepulster Laserabscheidung (pulsed laser deposition, PLD) hergestellt. Im Rahmen dieser Arbeit wurden die strukturellen, elektrischen und magnetischen Eigenschaften der Dünnfilme untersucht. Des weiteren wurden die fertig prozessierten MTJ-Bauelemente an einem im Rahmen dieser Arbeit entwickeltem und aufgebautem TMR-Messplatz vermessen. Dabei ist es gelungen einen TMR-Effekt von 0.5% in ZnxFe3-xO4-basierten MTJs nachzuweisen. Das erste Kapitel der Arbeit gibt eine Einführung in die spintronischen Effekte Riesenmagnetowiderstand (giant magnetoresistance, GMR) und Tunnelmagnetowiderstand (TMR). Deren technologische Anwendungen sowie die grundlegenden physikalischen Effekte und Modelle werden diskutiert. Das zweite Kapitel gibt eine Übersicht über die Materialklasse der spinellartigen Ferrite. Der Fokus liegt auf den Materialien Magnetit (Fe3O4) sowie Zinkferrit (ZnxFe3-xO4). Die physikalischen Modelle zur Beschreibung der strukturellen, magnetischen und elektrischen Eigenschaften dieser Materialien werden dargelegt sowie ein Literaturüberblick über experimentelle und theoretische Arbeiten gegeben. Im dritten Kapitel werden die im Rahmen dieser Arbeit verwendeten Probenpräparations- und Charakterisierungsmethoden vorgestellt und technische Details sowie physikalische Grundlagen erläutert. Die Entwicklung eines neuen Probendesigns zum Nachweis des TMR-Effekts in ZnxFe3-xO4-basierten MTJs ist Gegenstand des vierten Kapitels. Die Entwicklung des Probenaufbaus sowie die daraus resultierende Probenprozessierung werden beschrieben. Die beiden letzten Kapitel befassen sich mit der strukturellen, elektrischen und magnetischen Charakterisierung der mittels PLD abgeschiedenen Dünnfilme sowie der Tunnelkontaktstrukturen.

This report collects selected outstanding scientific and technological results obtained within the frame of the European project "FLASiC" (Flash LAmp Supported Deposition of 3C-SiC) but also other work performed in adjacent fields. Goal of the project was the production of large-area epitaxial 3C-SiC layers grown on Si, where in an early stage of SiC deposition the SiC/Si interface is rigorously improved by energetic electromagnetic radiation from purpose-built flash lamp equipment developed at Forschungszentrum Rossendorf. Background of this work is the challenging task for areas like microelectronics, biotechnology, or biomedicine to meet the growing demands for high-quality electronic sensors to work at high temperatures and under extreme environmental conditions. First results in continuation of the project work – for example, the deposition of the topical semiconductor material zinc oxide (ZnO) on epitaxial 3C-SiC/Si layers – are reported too.

The work in this thesis focuses on the preparation of epitaxial Nd-Fe-B thin films using pulsed laser deposition for good hard magnetic properties. They are suitable for a basic understanding of the intrinsic magnetic properties. Compositional control was necessary to achieve phase formation with improved magnetic properties. Nd-Fe-B samples were prepared on single crystal MgO (001) substrates with different buffer layers in order to obtain good textures with different surface morphology. The smooth and continuous epitaxial films were suitable for performing magnetization measurements under stress. Although the magnetostriction is easily neglected in the Nd2Fe14B compound, distinguishable inverse magnetostriction was observed by conventional tensile elongation with a flexible substrate. As a result, anisotropic strain in the film, which breaks the in-plane symmetry, affected the opening angle during the spin reorientation. Therefore an elliptical distortion of the in-plane anisotropy below the spin reorientation temperature of Nd2Fe14B was obtained, whereas the transition temperature itself was not influenced significantly. / Diese Arbeit behandelt die Herstellung dünner epitaktischer Nd-Fe-B-Schichten mit gepulster Laserdeposition mit dem Ziel, gute hartmagnetische Eigenschaften zu erreichen. Diese Schichten sind außerdem für das Verständnis grundlegender magnetischer Eigenschaften geeignet. Die Kontrolle der Zusammensetzung ist notwendig, um die Phasenbildung und optimale hartmagnetische Eigenschaften zu erreichen. Nd-Fe-B-Schichten wurden auf einkristallinen MgO (001)-Substraten mit verschiedenen Buffern deponiert, um unterschiedliche Texturen und Oberflächenmorphologien einzustellen. Die glatten kontinuierlichen epitaktischen Schichten ermöglichen die Messung der Magnetisierung bei gleichzeitig angelegter mechanischer Spannung. Obwohl die Magnetostriktion bei Nd-Fe-B im Allgemeinen vernachlässigt werden kann, konnte an Nd-Fe-B-Schichten nach dem Aufbringen einer Dehnung auf ein flexibles Substrat eine deutliche inverse Magnetostriktion induziert werden. Die anisotrope Dehnung in der Schicht, die die Symmetrie in der Schichtebene bricht, beeinflusst die Öffnungswinkel bei der Spinreorientierung. Damit wurde unterhalb der Spinreorientierungstemperatur eine elliptische Verzerrung der Anisotropie in der Schichtebene erreicht, die Übergangstemperatur selbst änderte sich dagegen nicht signifikant.