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Óptica de raios X otimizada para estudo de dispositivos nanoestruturados com fontes compactas de radiação / X-ray optics optimized for studies of nanostructured devices with compact sourceDarin Filho, Gaspar 28 May 2014 (has links)
Nanotecnologia é o conjunto de conhecimentos acumulados pelo homem que permite controlar a produção de estruturas com uma ou mais dimensões nanométricas. Desde seus primórdios na década de 70, a nanotecnologia tem estado em constante ascensão, encontrando uma diversidade enorme de aplicações, como por exemplo em medicina e na indústria optoeletrônica. Por consequência, a demanda por equipamentos tanto de preparo como de caracterização/controle tem crescido exponencialmente. O uso da radiação X no estudo de dispositivos nanoestruturados tem sido, em grande parte, possível gra- ças as fontes síncrotrons com feixes intensos. Mas a disponibilidade desses laboratórios de alta tecnologia está aquém da crescente demanda das pesquisas em nanotecnologia, as quais precisam de técnicas de análise estrutural rápidas e de fácil acesso para otimização e controle da produção de dispositivos nanoestruturados. Com foco nessa falta por técnicas de análise estrutural, esta dissertação tem como objetivo avaliar quais parâmetros básicos de nanodispositivos, com substratos monocristalinos, podem ser investigados por meio de técnicas de difração de raios X utilizando fontes compactas de radiação, bem como avaliar as limitações instrumentais. / X-ray radiation has provided a powerful tool for analyzing the structure of materials at atomic scale. While many are fascinated with the perspectives oered by advanced X-ray sources, the practical aspects of these perspectives in the actual and future scenery of nanotechnology needs to be discussed. Nanotechnology, i.e. the capacity of controlling matter at atomic-molecular scales and manufacturing structures with dimensions of a few tens of nanometers, has provided a constant challenge for structural analysis via X-ray techniques. The great diversity of materials and methods derived from nanotechnology is generating a huge demand for time of analysis, much beyond of that can be supplied by synchrotron facilities worldwide. In optimizing nanostructured materials and devices processing methods, fast and easy-access techniques to control and characterization are required. Microscopy and spectroscopy techniques are very important in this scenery, but they have intrinsic limitations that have justied the search for high-resolution techniques of structural analysis, such as those obtained by diraction of X-rays. The use of Xradiation in the study of nanostructured device has been possible by synchrotron sources due to the high intense beams. But the availability of these high tech laboratories falls short of the growing demand for nanotechnology research. In this context, this dissertation intend evaluate which basic parameters of nanodevices with single crystal substrates can be investigated by techniques of X-ray diraction using compact radiation sources as well how to evaluate the instrumental limitations .
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Óptica de raios X otimizada para estudo de dispositivos nanoestruturados com fontes compactas de radiação / X-ray optics optimized for studies of nanostructured devices with compact sourceGaspar Darin Filho 28 May 2014 (has links)
Nanotecnologia é o conjunto de conhecimentos acumulados pelo homem que permite controlar a produção de estruturas com uma ou mais dimensões nanométricas. Desde seus primórdios na década de 70, a nanotecnologia tem estado em constante ascensão, encontrando uma diversidade enorme de aplicações, como por exemplo em medicina e na indústria optoeletrônica. Por consequência, a demanda por equipamentos tanto de preparo como de caracterização/controle tem crescido exponencialmente. O uso da radiação X no estudo de dispositivos nanoestruturados tem sido, em grande parte, possível gra- ças as fontes síncrotrons com feixes intensos. Mas a disponibilidade desses laboratórios de alta tecnologia está aquém da crescente demanda das pesquisas em nanotecnologia, as quais precisam de técnicas de análise estrutural rápidas e de fácil acesso para otimização e controle da produção de dispositivos nanoestruturados. Com foco nessa falta por técnicas de análise estrutural, esta dissertação tem como objetivo avaliar quais parâmetros básicos de nanodispositivos, com substratos monocristalinos, podem ser investigados por meio de técnicas de difração de raios X utilizando fontes compactas de radiação, bem como avaliar as limitações instrumentais. / X-ray radiation has provided a powerful tool for analyzing the structure of materials at atomic scale. While many are fascinated with the perspectives oered by advanced X-ray sources, the practical aspects of these perspectives in the actual and future scenery of nanotechnology needs to be discussed. Nanotechnology, i.e. the capacity of controlling matter at atomic-molecular scales and manufacturing structures with dimensions of a few tens of nanometers, has provided a constant challenge for structural analysis via X-ray techniques. The great diversity of materials and methods derived from nanotechnology is generating a huge demand for time of analysis, much beyond of that can be supplied by synchrotron facilities worldwide. In optimizing nanostructured materials and devices processing methods, fast and easy-access techniques to control and characterization are required. Microscopy and spectroscopy techniques are very important in this scenery, but they have intrinsic limitations that have justied the search for high-resolution techniques of structural analysis, such as those obtained by diraction of X-rays. The use of Xradiation in the study of nanostructured device has been possible by synchrotron sources due to the high intense beams. But the availability of these high tech laboratories falls short of the growing demand for nanotechnology research. In this context, this dissertation intend evaluate which basic parameters of nanodevices with single crystal substrates can be investigated by techniques of X-ray diraction using compact radiation sources as well how to evaluate the instrumental limitations .
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Estudo de propriedades estruturais e de piezeletricidade nos cristais de ADP e KDP puros e dopados com íons Ni2+ e Mn3+ com DMRX utilizando radiação síncrotron / Study of structural properties and piezoelectricity in crystals of ADP and KDP pure and doped with ions Ni2+ and Mn3+ with XRMD using Synchrotron RadiationGOMES, Eduardo José de Lima 31 August 2010 (has links)
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Previous issue date: 2010 / CAPES - Coordenação de Aperfeiçoamento de Pessoal de Nível Superior / CNPq - Conselho Nacional de Desenvolvimento Científico e Tecnológico / LNLS - Laboratório Nacional de Luz Síncroton / A difração múltipla de raios-X utilizando radiação Síncrotron foi aplicada para o estudo de cátions de metais de transição Mn3+ e Ni2+ incorporados a rede cristalina do Fosfato de Amônio Monobásico (ADP) e Fosfato de Potássio Monobásico (KDP). Em todos os diagramas Renninger obtidos para as diferentes amostras e diferentes comprimentos de onda podemos observar que as posições angulares e o número de picos não sofrem alteração. Este fato nos diz que os parâmetros da célula unitária e a simetria do cristal são praticamente os mesmos, independentemente da incorporação de cátíons Mn3+ e Ni2+. Cálculos precisos dos parâmetros da célula unitária revelam que há expansão dos parâmetros de rede a = b e contração do parâmetro de rede c do cristal de ADP dopado com Ni2+ e 3+. Nas medidas com ambos os comprimentos de onda no ADP:Mn o digrama Renninger apresenta picos com perfis semelhantes aos perfis dos picos nos diagrama Renninger do cristal de ADP puro. Nenhum pico extra aparece no diagrama Renninger do cristal dopado. A partir dos diagramas resultantes das medidas no cristal de ADP:Ni pode-se observar claramente: (i) alguns picos que tinham um perfil assimétrico no diagrama do cristal de ADP puro apresentam perfis quase totalmente simétricos no diagrama do cristal dopado com Ni2+ (nas medidas com comprimento de onda abaixo da borda de absorção do Ni2+) e, (ii) alguns picos sofrem uma forte inversão em seus perfis (nas medidas com comprimento de onda acima da borda de absorção do Ni2+), por exemplo, o pico (5-12)/(-112), que representa um caso de quatro feixes. Estes resultados indicam que o diagrama Renninger com radiação Síncrotron é uma sonda de alta resolução a serem utilizados na incorporação de impurezas na rede ADP. Além disso, investigamos os coeficientes piezelétricos dos cristais de ADP:Mn, KDP:Mn e KDP:Ni por difração de raios-X à temperatura ambiente. Os resultados das medidas das reflexões 440 e 066 permitiram a obtenção dos coeficientes d36 e d25. Nós observamos que estes coeficientes aumentaram com a dopagem dos íons Mn3+ e Ni2+ nos cristais de ADP e KDP. / The X-ray multiple diffraction using synchrotron radiation has been applied to study transition metal cátions Mn 3+ and Ni 2+ incorporated into Ammonium Diydrogen Phosphate (ADP) Crystal lattice and potassium dihydrogen phosphate (KDP). The results shows that regarding peak positions and number of peaks all the profilets look almost identical. This fact alone tells us that the unit cell parameters and the crystal symmetry are practically the same regardless of the incorporation of Mn 3+ and Ni 2+ cations. Accurate calculation of the unit-cell parameters revels that the lattices lattices parameters a = b increase and lattices parameters c decrease following Ni 2+ and Mn 3+ incorporation. In the measurements for the two wavelengths ADP:Mn crystal exhibit asymmetric peak profiles and no extra peak appears in the whole Mn 3+ doped RS. On the other hand, in the ADP:Ni measurements one can clearly observe: (i) suppression of the intensity profile asymmetry in secondary peaks for the Ni 2+ doped RS (below l Ni 2+ Kedge) and also, (ii) marked asymmetry inversion (above l Ni 2+ Kedge), for example the peak (5-12) / (-112) which represents a four beam case. These results indicate that synchrotron radiation RS is a high resolution probe to be used in the impurity incorporation in the ADP lattice. Moreover we have investigated ADP:Mn, KDP:Mn and KDP:Ni crystals using X-ray diffraction at room temperature. The results of the measurements of 440 and 066 reflections allow obtaining the d 36 and d 25 coefficients. We reported on the experimental verification based on X-ray measurements, the d 36 piezoelectric coefficients increased with doping of the Mn and Ni 2+ in the KDP and in ADP crystals.
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It is an Experience, Not a Lesson: The Nature of High School Students' Experiences at a Biological Field StationBehrendt, Marc E. 09 June 2014 (has links)
No description available.
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Der Einfluß von Kristallfehlern auf Kossel- und Weitwinkel-Interferenzen / Effect of Crystal Defects on Kossel and Pseudo Kossel X-Ray InterferencesLanger, Enrico 02 July 2005 (has links) (PDF)
Die Arbeit beschäftigt sich mit zerstörungsfreien Untersuchungen von Kristalldefekten an kompakten Proben mittels röntgenographischer Kossel- u. Weitwinkel-Mikrobeugung im Rasterelektronenmikroskop. Das REM wurde durch ein neu entwickeltes Aufnahmeverfahren so erweitert, daß die äußerst intensitätsschwachen Kossel-Röntgeninterferenzen mittels Phosphorszintillator und hochauflösendem, extrem empfindlichen CCD-Flächendetektor registriert werden können. Das aufwendige Röntgenfilmverfahren wurde damit abgelöst. Die Aufnahme-Techniken wurden so kombiniert, daß die sich gegenseitig ergänzenden Methoden, v.a. die Kossel- u. Pseudo-Kossel-, aber auch die Rückstreu-Elektronen-Beugung, erstmals mit einem einzigen CCD-System im REM ausführbar sind. Die Aufnahme von Kikuchi-Bändern wurde so weit verbessert, daß diese erstmalig bei vertikaler Inzidenz des Elektronenstrahls auf der Probe beobachtet werden konnten. Durch Einsatz einer fokussierenden Polykapillarlinse in einem Röntgenfluoreszenzspektrometer konnte die Anregung von Kossel-Linien durch Bremsstrahlung und erheblich kürzere Belichtungszeiten sowie deutlich höhere laterale Auflösungen erzielt werden. Für die komplementären Mikrobeugungsmethoden wurde ein einheitliches Programm entwickelt, dessen neue Art der Simulation komplizierter Weitwinkel-Kurven 4. Ordnung die Lokalisierung von Gitterbaufehlern im kompakten Kristall ermöglichte. Entsprechende Simulationen und Verfeinerungen der Kanüle erlaubten in feinkörnigen Polykristallen, wie Bariumtitanat, eine Einzelkornanalyse mit der Weitwinkel-Beugung. Insbesondere wurden markante Erhöhungen der Versetzungsdichte nahe der Korngrenze einzelner Kristallite in FeAl festgestellt. An intermetallischen Fe-Al-Verbindungen wurden in Weitwinkel-Kurven Feinstrukturen gefunden, die sich durch Umweganregungen in Zusammenhang mit Überstrukturen erklären lassen. An zugverformten Ni-Kristallen wurden Kossel- u. Weitwinkel-Linienbreiten in Abhängigkeit des Azimuts im symmetrischen Bragg-Fall ausgewertet u. mit theoretischen Modellen verglichen. Anisotrope Linienverbreiterungen durch die Wirkung von Stufenversetzungen konnten quantitativ nachgewiesen werden. Erste Kossel- u. Weitwinkel-Untersuchungen an zyklisch verformten Ni-Einkristallen zeigten, daß beobachtete perlenkettenförmige Intensitätsanhäufungen an Weitwinkelreflexen die Konfiguration von Versetzungswänden aus Stufenversetzungsdipolen im Kristallvolumen widerspiegeln. Erstmals konnte der Einfluß von Stapelfehlern auf Weitwinkel-Linien, der sich durch linsenförmige Intensitätsaufspaltungen zeigte, experimentell nachgewiesen, theoretisch erklärt und quantitativ bestimmt werden. / The thesis deals with the nondestructive investigation of crystal defects by X-ray Kossel and Pseudo Kossel microdiffraction on compact specimens in the scanning electron microscope. The SEM was extended by means of a newly developed detection method in such a way that X-ray Kossel interferences, which are extremely faint in intensity, can be observed by a phosphor scintillator as well as a high resolution and ultra-sensitive CCD area detector. The demanding X-ray film method was thus replaced. The observation techniques were combined so that the mutually complementary methods, above all the Kossel and Pseudo Kossel, but also the electron backscattered diffraction, are made possible for the first time by using just one CCD system in the SEM. The detection of Kikuchi bands was improved to such a degree that these could be recorded even at vertical incidence of the electron beam on the specimen for the first time. It was shown that the lateral resolution of the Kossel technique under polychromatic X-ray tube excitation could be enhanced considerably and the exposure times strongly reduced by using a polycapillary lens in an X-ray fluorescence spectrometer. For the complementary microdiffraction methods a homogeneous simulation program was developed, whose novel way of simulating the complicated Pseudo Kossel curves of the fourth order enable the lattice defect localization in compact crystals. The corresponding simulations and refinements of the target tube allowed a single grain analysis also in fine-grained polycrystals like barium titanate with Pseudo Kossel X-ray diffraction. Particularly, a marked increase of the dislocation density was ascertained near the grain boundary of individual crystallites in FeAl. At intermetallic Fe-Al compounds Pseudo Kossel curves fine structures were found, which can be explained by umweg (detour) excitations in relation to superstructures. Kossel and Pseudo Kossel line widths were analyzed in dependence on the azimuth and compared with theoretical models at tensile deformed Ni-crystals in the symmetrical Bragg case. Anisotropic line broadenings through the effect of edge dislocations could be proved quantitatively. Conclusions could be drawn from the initial Kossel and Pseudo Kossel investigations of cyclically deformed nickel crystals with respect to the observed pearl-necklace-like intensity thickening at Pseudo Kossel lines reflecting the strong local variations of the dislocation density and, thus, the configuration of dislocation walls of edge dislocation dipoles inside the crystalline volume. For the first time, the effect of stacking faults on Pseudo Kossel reflections appearing by lens-shaped intensity splittings could be proved experimentally, explained theoretically and determined quantitatively.
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Der Einfluß von Kristallfehlern auf Kossel- und Weitwinkel-InterferenzenLanger, Enrico 22 June 2005 (has links)
Die Arbeit beschäftigt sich mit zerstörungsfreien Untersuchungen von Kristalldefekten an kompakten Proben mittels röntgenographischer Kossel- u. Weitwinkel-Mikrobeugung im Rasterelektronenmikroskop. Das REM wurde durch ein neu entwickeltes Aufnahmeverfahren so erweitert, daß die äußerst intensitätsschwachen Kossel-Röntgeninterferenzen mittels Phosphorszintillator und hochauflösendem, extrem empfindlichen CCD-Flächendetektor registriert werden können. Das aufwendige Röntgenfilmverfahren wurde damit abgelöst. Die Aufnahme-Techniken wurden so kombiniert, daß die sich gegenseitig ergänzenden Methoden, v.a. die Kossel- u. Pseudo-Kossel-, aber auch die Rückstreu-Elektronen-Beugung, erstmals mit einem einzigen CCD-System im REM ausführbar sind. Die Aufnahme von Kikuchi-Bändern wurde so weit verbessert, daß diese erstmalig bei vertikaler Inzidenz des Elektronenstrahls auf der Probe beobachtet werden konnten. Durch Einsatz einer fokussierenden Polykapillarlinse in einem Röntgenfluoreszenzspektrometer konnte die Anregung von Kossel-Linien durch Bremsstrahlung und erheblich kürzere Belichtungszeiten sowie deutlich höhere laterale Auflösungen erzielt werden. Für die komplementären Mikrobeugungsmethoden wurde ein einheitliches Programm entwickelt, dessen neue Art der Simulation komplizierter Weitwinkel-Kurven 4. Ordnung die Lokalisierung von Gitterbaufehlern im kompakten Kristall ermöglichte. Entsprechende Simulationen und Verfeinerungen der Kanüle erlaubten in feinkörnigen Polykristallen, wie Bariumtitanat, eine Einzelkornanalyse mit der Weitwinkel-Beugung. Insbesondere wurden markante Erhöhungen der Versetzungsdichte nahe der Korngrenze einzelner Kristallite in FeAl festgestellt. An intermetallischen Fe-Al-Verbindungen wurden in Weitwinkel-Kurven Feinstrukturen gefunden, die sich durch Umweganregungen in Zusammenhang mit Überstrukturen erklären lassen. An zugverformten Ni-Kristallen wurden Kossel- u. Weitwinkel-Linienbreiten in Abhängigkeit des Azimuts im symmetrischen Bragg-Fall ausgewertet u. mit theoretischen Modellen verglichen. Anisotrope Linienverbreiterungen durch die Wirkung von Stufenversetzungen konnten quantitativ nachgewiesen werden. Erste Kossel- u. Weitwinkel-Untersuchungen an zyklisch verformten Ni-Einkristallen zeigten, daß beobachtete perlenkettenförmige Intensitätsanhäufungen an Weitwinkelreflexen die Konfiguration von Versetzungswänden aus Stufenversetzungsdipolen im Kristallvolumen widerspiegeln. Erstmals konnte der Einfluß von Stapelfehlern auf Weitwinkel-Linien, der sich durch linsenförmige Intensitätsaufspaltungen zeigte, experimentell nachgewiesen, theoretisch erklärt und quantitativ bestimmt werden. / The thesis deals with the nondestructive investigation of crystal defects by X-ray Kossel and Pseudo Kossel microdiffraction on compact specimens in the scanning electron microscope. The SEM was extended by means of a newly developed detection method in such a way that X-ray Kossel interferences, which are extremely faint in intensity, can be observed by a phosphor scintillator as well as a high resolution and ultra-sensitive CCD area detector. The demanding X-ray film method was thus replaced. The observation techniques were combined so that the mutually complementary methods, above all the Kossel and Pseudo Kossel, but also the electron backscattered diffraction, are made possible for the first time by using just one CCD system in the SEM. The detection of Kikuchi bands was improved to such a degree that these could be recorded even at vertical incidence of the electron beam on the specimen for the first time. It was shown that the lateral resolution of the Kossel technique under polychromatic X-ray tube excitation could be enhanced considerably and the exposure times strongly reduced by using a polycapillary lens in an X-ray fluorescence spectrometer. For the complementary microdiffraction methods a homogeneous simulation program was developed, whose novel way of simulating the complicated Pseudo Kossel curves of the fourth order enable the lattice defect localization in compact crystals. The corresponding simulations and refinements of the target tube allowed a single grain analysis also in fine-grained polycrystals like barium titanate with Pseudo Kossel X-ray diffraction. Particularly, a marked increase of the dislocation density was ascertained near the grain boundary of individual crystallites in FeAl. At intermetallic Fe-Al compounds Pseudo Kossel curves fine structures were found, which can be explained by umweg (detour) excitations in relation to superstructures. Kossel and Pseudo Kossel line widths were analyzed in dependence on the azimuth and compared with theoretical models at tensile deformed Ni-crystals in the symmetrical Bragg case. Anisotropic line broadenings through the effect of edge dislocations could be proved quantitatively. Conclusions could be drawn from the initial Kossel and Pseudo Kossel investigations of cyclically deformed nickel crystals with respect to the observed pearl-necklace-like intensity thickening at Pseudo Kossel lines reflecting the strong local variations of the dislocation density and, thus, the configuration of dislocation walls of edge dislocation dipoles inside the crystalline volume. For the first time, the effect of stacking faults on Pseudo Kossel reflections appearing by lens-shaped intensity splittings could be proved experimentally, explained theoretically and determined quantitatively.
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