Graphene is widely considered to be a promising candidate for a new generation of electronics, but there are many outstanding fundamental issues that need to be addressed before this promise can be realized. This thesis focuses on the production and properties of graphene grown epitaxially on the carbon terminated face (C-face) of hexagonal silicon carbide leading to the construction of a novel graphene transistor structure. C-face epitaxial graphene multilayers are unique due to their rotational stacking that causes the individual layers to be electronically decoupled from each other. Well-formed C-face epitaxial graphene single layers have exceptionally high mobilities (exceeding 10,000 cm ²/Vs), which are significantly greater than those of Si-face graphene monolayers. This thesis investigates the growth and properties of C-face single layer graphene. A field effect transistor based on single layer graphene was fabricated and characterized for the first time. Aluminum oxide or boron nitride was used for the gate dielectric. Additionally, an all graphene/SiC Schottky barrier transistor on the C-face of SiC composed of 2DEG in SiC/Si₂O ₃ interface and multilayer graphene contacts was demonstrated. A multiple growth scheme was adopted to achieve this unique structure.

Sharp leading edges and nose caps on hypersonic vehicles, re-entry vehicles and reusable launch vehicles are items of current research interest for enhanced aerodynamic performance and maneuverability. The unique combination of mechanical properties, physical properties, thermal / electrical conductivities and thermal shock resistance of ZrB2 make it a promising candidate material for such applications. In the recent past, a lot of work has been carried out on ZrB2-based materials towards processing as well as characterization of their mechanical, oxidation and thermal behaviour. ZrB2 based materials have been successfully processed by conventional hot pressing, pressureless sintering, reactive hot pressing and spark plasma sintering. Densification of ZrB2 gets activated when the oxide impurities (B2O3 and ZrO2) were removed from particle surfaces, which minimized coarsening. B4C is widely used as a sintering additive for ZrB2 because it reduces ZrO2 at low temperature. It is found that full densification in ZrB2 based materials by hot pressing is achieved either at 2000 C and higher temperatures with moderate pressure of 20-30 MPa or at reduced temperature (1790-1840 C) with much higher pressure (800-1500 MPa). But no study is available that identifies the dominant hot pressing mechanism at different temperatures and pressures. On the other hand, reinforcement of SiC in ZrB2 is known to increase flexural strength, fracture toughness and oxidation resistance. It has been shown that oxidation resistance of ZrB2-SiC composites is superior to that of monolithic ZrB2 and SiC. For high temperature applications in air, the residual strength (room temperature strength after exposure in air at high temperatures) of non oxide ceramics after oxidation is important. A few reports are available on residual strength of ZrB2 –SiC composite after thermal exposure at high temperatures. In contrast to the literature on composites, there are no reports available on the residual strength of monolithic ZrB2 after exposure to high temperatures. Also, previous studies on residual strength of ZrB2-SiC composites have been limited to a single temperature of exposure. But there is a need to measure the residual strength after exposure to a range of temperatures since the oxide layer structure changes with temperature. The room temperature thermal conductivity data for ZrB2 and ZrB2-SiC composite shows a wide scatter in value as well as a dependence on microstructural parameters, especially porosity and grain size. Also, there is insufficient data available for the high temperature thermal conductivity of ZrB2-SiC. Therefore, it is difficult to evaluate the effect of SiC content on thermal conductivity of ZrB2-SiC composites at high temperatures. The present thesis seeks to address some of these gaps to better understand the suitability of ZrB2 and ZrB2-SiC composites for ultra-high temperature applications. In the present work, hot pressing is used for densification of ZrB2 and ZrB2-SiC composites. Different amounts of B4C (0, 0.5, 1, 3 & 5 wt %) were used as sintering additives in ZrB2 and hot pressed at 2000 C with 25 MPa applied pressure. The hot pressed samples are characterized for their microstructural, mechanical properties and oxidation behaviour. By addition of B4C, density as well as micro-hardness increased. For lower B4C content (0.5 & 1 wt %), hot pressed ZrB2 has shown considerable improvement in flexural strength after exposure in air at 1000 C for 5 hours, while higher B4C content (3 & 5 wt %) leads to marginal or no improvement. Due to the better mechanical and oxidation behavior of composites containing SiC, the densification behavior during hot pressing was studied. The densification behaviors as well as the microstructures for hot pressing of ZrB2-20 % SiC composite were found to change in a very 0 narrow temperature range. During hot pressing at 1700 C, the densification was found to be mechanically driven particle fragmentation and rearrangement. On the other hand, thermally activated mass transport mechanisms started dominating after initial particle fragmentation and rearrangement after hot pressing at 1850 C and 2000 C. At 2000 C, the rate of grain boundary diffusion was enhanced which resulted into annihilation of dislocation. The effect of SiC contents (10, 20 & 30 vol %) on mechanical and oxidation behavior of ZrB2-SiC composite were also studied. The average micro-hardness and fracture toughness of ZrB2-SiC composites increased with SiC content. But the flexural strength of ZrB2-20 vol % SiC composites was found to be the highest. Oxidation and residual strength of hot pressed ZrB2 -SiC composites were evaluated as a function of SiC contents after exposure over a wide temperature range (1000-1700 C). Multilayer oxide scale structures were found after oxidation. The composition and thickness of these multilayered oxide scale structures were found to depend on exposure temperature and SiC content. After exposure to 1000 C for 5 hours, the residual strength of ZrB2 -SiC composites improved by nearly 60 % compared to the as-hot pressed composites with 20 & 30 vol % SiC. On the other hand, the residual strength of these composites remained unchanged after 1500 C for 5 hours. A drastic degradation in residual strength was observed in composites with 20 & 30 vol % SiC whereas strength was retained for ZrB2-10 % SiC composite after exposure to 1700 C for 5 hours in ZrB2 –SiC. Therefore, residual strength of ZrB2-10 % SiC composite was measured at different exposure times (up to 10 hours) at 1500 0C. An attempt was made to correlate the microstructural changes and oxide scales with residual strength with respect to variation in SiC content and temperature of exposure. Since the ZrB2-20 vol % SiC composite showed the maximum strength, the dependence of strength on various microstructural as well processing parameters was also studied. It was found that porosity, grain size as well as surface residual stress due to grinding influenced the strength of ZrB2-20 vol % SiC composites. Finally, thermal diffusivity and conductivity of hot pressed ZrB2 with different amounts of B4C and ZrB2-SiC composites were investigated experimentally over a wide temperature range (25 – 1500 C). Both thermal diffusivity as well as thermal conductivity was found to decrease with increase in temperature for all hot pressed ZrB2 and ZrB2-SiC composites. At around 200 C, thermal conductivity of ZrB2-SiC composites was found to be composition independent. Thermal conductivity of ZrB2-SiC composites was also correlated with theoretical predictions of the Maxwell-Eucken relation. The dominated mechanisms of heat transport for all hot pressed ZrB2 and ZrB2-SiC composites at room temperature were determined by Wiedemann-Franz analysis using measured room temperature electrical conductivity of these materials. It was found that the electronic thermal conductivity dominated for all monolithic ZrB2 whereas the phonon contribution to thermal conductivity increased with SiC contents for ZrB2-SiC composites. The heat conduction mechanism at high temperature was also studied by measuring the high temperature electrical conductivity of ZrB2 and ZrB2-SiC composites. The effect of porosity on thermal diffusivity and conductivity was also studied for ZrB2-20 vol % SiC composites.

L’amélioration des systèmes de conversion d’énergie rend les dispositifs à base de SiC très attractifs pour leur efficacité, compacité et robustesse. Cependant, leur comportement en réponse à un défaut de court-circuit doit être soigneusement étudié pour assurer la fiabilité des systèmes. Ce travail de recherche porte sur les problèmes de robustesse et de fiabilité du MOSFET SiC sous contraintes de court-circuit. Cette étude repose sur des caractérisations électriques et microstructurales. La somme de toutes les caractérisations avant, pendant et après les tests de robustesse ainsi que l’analyse microstructurale permet de définir des hypothèses sur l’origine physique de la défaillance pour ce type de composants. De plus, la mesure de la capacité est introduite au cours des tests de vieillissement en tant qu’indicateur de santé et outil clé pour remonter à l’origine physique du défaut. / The improvement of power conversion systems makes SiC devices very attractive for efficiency, compacity and robustness. However, their behavior in response to short circuit mode must be carefulli studied to ensure the reliability of systems. This research work deals with the SiC MOSFET robustness and reliability issues under short-circuit constraints. It is based upon electrical and microstructural characterizations. The sum of all the characterizations before, during and after the robustness tests as well as microstructural analysis allow to define hypotheses regarding the physical origin of failure of such components. Also, caoacitance measurement is introduced during aging tests as a health indicator and a key tool to go back to the physical origin of the defect.

For graphene to be a viable platform for nanoscale devices, high quality growth and structures are necessary. This means structuring the SiC surface to prevent graphene from having to be patterned using standard microelectronic processes. Presented in this thesis are new processes aimed at improving the graphene as well as devices based on high quality graphene nanoribbons. Amorphous carbon (aC) corrals deposited prior to graphene growth are demonstrated to control SiC step-flow. SiC steps are shown to be aligned by the presence of the corrals and can increase SiC terrace widths. aC contacts deposited and crystallized during graphene growth are shown as a way to contact graphene without metal lift-off. Observation of the Quantum Hall Effect demonstrates the high quality of the graphene grown alongside the nanocrystalline graphite contacts. Continuing the ballistic transport measurements on sidewall graphene nanoribbons, the invasive probe effect is observed using an atomic force microscope (AFM) based technique that spatially maps the invasive probe effect. Cleaning experiments demonstrate the role of scattering due to resist residues and environmental adsorbates on graphene nanoribbons. Finally, switches based on junctions formed in the graphene nanoribbons are shown as a route toward graphene based devices.

Thesis (MEng) -- Stellenbosch University, 2014. / ENGLISH ABSTRACT: In this study, SiC reduction of Rowland and Easterns LG (Low Grade) concentrates was investigated. The purpose of the study was to investigate the feasibility of SiC as reductant with respect to metal fall, PGM grade in the alloy, slag composition, Cr solubility and overall PGM recovery. The integration of such process in the current matte-based collection process was also investigated. Currently, the matted-based collection process is most widely used for PGM recovery, but because PGM containing concentrates are becoming more enriched with UG2 (Upper Group 2) LG concentrates, it is expected to be integrated or replaced with an alloy collection process. This kind of process offers greater flexibility to the different types of ore that could be used. The process is chromium tolerant and environmentally friendly. For this purpose Rowland and Easterns UG2 LG Concentrate samples from Lonmin Western Platinum Limited were analysed with XRD, XRF and ICP-MS and it was found that SiO2 and MgO are the most abundant oxides and Pd is the most abundant element from the PGMs. Sulphide bearing minerals such as chalcopyrite were detected in low concentrations (below 1 %) and Cr2O3 concentrations are between 2 – 4 %. The FeO/SiO2 ratio was lower in Rowland LG concentrate. SiC reduction of Rowland and Easterns concentrate was done at 1600℃. Reductant to concentrate ratios for laboratory scale experiments were ranged from 2.5 to 3.5 kg SiC / 100 kg concentrate. SiC reduction of Rowland concentrate had different reduction times. The duration of reduction experiments ranged from 30 - 180 min. PGM recoveries from SiC reduction of Rowland concentrate were very poor (below 10 %) and Fe recoveries were lower than 50 %. A slag viscosity at the end of the melt of more than 4 poise was responsible for poor phase separation. SEM images revealed metal prills entrained in the slag phase instead of settling and combining to the alloy globule at the bottom of the crucible. However, PGM recoveries from SiC reduction of Easterns concentrate was significantly better. More than 85 % of Ir and Pd and almost 60 % of Pt were recovered in a test with a reductant to concentrate ratio of 3.5 kg SiC / 100 kg Easterns concentrate. Fe recovery was also the highest at 66%. Cr and Si concentrations were below 5 % in total. The slag viscosity at the end of melt was calculated to be less than 4 poise and a SEM image of a slag sample revealed few entrained metal prills. After the above findings on the importance of viscosity, it was decided to increase the FeO content in the initial concentrate charge in order to decrease slag viscosity, increase metal fall (PGM collecting phase) and further increase PGM recovery. Peirce-Smith converter slag was used for this purpose. A test was conducted with the addition of 10 kg converter slag / 100 kg Easterns concentrate. The reductant to concentrate ratio was kept at 3.5 kg SiC / 100 kg Easterns concentrate. The results revealed that Ir and Pd recoveries were more than 95%, while Pt recovery was almost 70%. Fe recovery increased to 76 %. On the basis of the results from the test, an optimum feed ratio between Easterns LG concentrate, Rowland concentrate and Peirce-Smith converter slag was calculated. Thermodynamic phase equilibrium calculations predicted that the concentrate charge should consist of 60 - 80% Easterns concentrate with a slag addition of 30 – 40 kg converter slag / 100 kg LG concentrate. SiC reduction of this optimum LG concentrate charge is expected to recover more than 90% of all PGMs. Cr and Si concentrations in the alloy will be below 1 % in total. The amount of converter slag as an addition will be however limited by final PGM grade in the alloy, furnace slag quantities recycled and slag resistivity required in the alloy furnace. The effectiveness of SiC as reductant was also compared to C reduction. C reduction of an optimum concentrate charge had a marginally higher metal fall at the same reductant to concentrate ratio than SiC reduction of an optimum concentrate charge. However, gas emissions are on average 3 times higher for C reduction of a concentrate charge and C reduction requires at least 300 MJ more to smelt 1 ton of LG concentrate than SiC reduction. This is mostly due to C reacting endothermically with FeO to produce Fe(l) and CO(g) in contrast to SiC reacting exothermically with FeO to produce Fe(l), SiO2(l) and CO(g). Integrating SiC reduction of LG concentrates into the existing smelting route at Lonmin was also proposed through a process flow diagram. From an economic point of view, it was found that SiC reduction of 1 ton of LG concentrate charge with a converter slag addition requires almost 700 MJ more than the smelting of a UG2 blended concentrate to produce a matte phase. However it must be taken into account that the sulphide rich layers in the Bushveld complex are being depleted rapidly and alternative processes such as SiC reduction and alloy collection process will be utilized faster than expected. Moreover, gas emissions from reductive smelting is considerably lower, hence it is a more environmentally friendly process. Finally, from the findings of this study, it could be said that base metals and PGMs could be recovered in an iron alloy from SiC reduction of LG concentrate with converter slag additions. Therefore integrating such a process into the matte-based collection process could be considered as a future alternative to smelting UG2 LG concentrates. / AFRIKAANSE OPSOMMING: In hierdie studie, word SiC reduksie met Rowland en Oostelikes LG (Lae Graad) konsentrate ondersoek. Die doel van die studie was om die doeltreffendheid van SiC as reduktant te ondersoek met betrekking tot metaalval, PGM graad in die allooi, slaksamestelling (spesifiek word daar gekyk na Cr oplosbaarheid) en algehele PGM herwinning. Die integrasie van die proses in die huidige mat-gebaseerde versamelingproses word ook ondersoek. Tans word die mat-gebaseerde versamelingproses die algemeenste gebruik om PGM'e te kollekteer, maar omdat PGM konsentrate al hoe meer verryk word met UG2 (Upper Group 2) LG konsentrate, word daar verwag dat dit geïntegreer of vervang gaan word met 'n allooi-versamelingproses. Hierdie tipe proses bied groter buigsaamheid om die verskillende reekse van erts wat gebruik kan word. Die proses kan ook chroom hanteer en is omgewingsvriendelik. Vir hierdie doel was Rowland en Oostelikes UG2 LG konsentraatmonsters van Lonmin Western Platinum Limited ontleed met XRD, XRF en ICP -MS en met die ontleding was daar gevind dat SiO2 en MgO die volopste oksides was en dat Pd die volopste elemente van die PGMe was. Sulfiedminerale soos chalkopiriet is in lae konsentrasies opgespoor (minder as 1%) en Cr2O3 konsentrasies is tussen 2-4 %. Die FeO/SiO2 verhouding was laer in Rowland konsentraat. SiC reduksie van Rowland en Oostelikes konsentrate is teen 1600 ℃ uitgevoer. Die reduktant tot konsentraat verhouding vir laboratoriumskaal eksperimente het gewissel van 2.5 – 3.5 kg SiC / 100 kg konsentraat. SiC reduksie van Rowland LG konsentraat het verskillende reduksie tye gehad. Die duur van die reduksie eksperimente het gewissel van 30-180 min. PGM herwinning van SiC reduksie met Rowland konsentreer was baie laag (onder 10 %) en Fe herwinning was minder as 50%. 'n Slakviskositeit aan die einde van die smelt was hoër as 4 poise en was verantwoordelik vir die swak skeiding van fases. SEM beelde het gewys dat fyn metaalstukkies opgehou was in die slakfase in plaas daarvan dat dit vestig en kombineer met die allooibolletjie aan die onderkant van die smeltkroes. In teenstelling was die PGM herwinning van SiC reduksie met Oostelikes konsentraat aansienlik beter. Meer as 85 % van Ir en Pd was herwin en byna 60% van Pt was herwin tydens 'n toets met 'n reduktant tot konsentraat verhouding van 3.5 kg SiC / 100 kg Oostelikes konsentraat. Fe herwinning was 66% en was ook die hoogste van al die eksperimente. Cr en Si konsentrasies was minder as 5 % in totaal. Die slakviskositeit aan die einde van smelt was bereken en is minder as 4 posie. 'n SEM beeld van 'n slakmonster het baie min vasgevangde metaalstukkies getoon. Na afloop van die bogenoemde bevindinge oor die belangrikheid van viskositeit, was daar besluit om die FeO inhoud van die aanvanklike konsentraat te verhoog. Dit was gedoen om die slakviskositeit te verminder, die metaalval (PGM kollektering fase) te verhoog en sodoende die PGM herwinning verder te verbeter. Vir die doel was Peirce -Smith omskakelaarslak gebruik. ʼn Toets was uitgevoer met die toevoeging van 10 kg omskakelaarslak / 100 kg Oostelikes konsentraat. Die reduktant tot konsentraat verhouding was behou by 3.5 kg SiC / 100 kg Oostelikes konsentraat. Die resultate het getoon dat meer as 95 % van Ir en Pd herwin was, terwyl byna 70 % Pt herwin was. Die Fe herwinning het toegeneem tot 76%. Op grond van die resultate van die toets, is 'n optimale verhouding tussen Oostelikes konsentraat, Rowland konsentraat en Peirce -Smith omskakelaarslak bereken. Termodinamiese modellering voorspel dat die begin LG konsentraat voer uit 60 – 80 % Oostelikes konsentraat moet bestaan, met 'n slak toevoeging van 30 – 40 kg omskakelaarslak / 100 kg LG konsentraat. Daar word verwag dat meer as 90 % van PGM'e herwin sal word vanaf SiC reduksie met ʼn optimum LG konsentraat voer. Cr en Si konsentrasies in die allooi sal minder as 1% in totaal wees. Die hoeveelheid slak wat bygevoeg kan word sal egter beperk word deur die finale PGM graad in die allooi, oond-slak hoeveelhede wat herwin kan word en slakweerstand wat benodig word in die allooi-oond. Die effektiwiteit van SiC as reduktant is ook vergelyk met C reduksie. C reduksie van ʼn optimale konsentraatvoer het 'n effens hoër metaalval wanneer dieselde reduktant tot konsentraat verhouding behou was vir SiC reduksie van 'n optimale konsentraatvoer. Gas hoeveelhede van C reduksie is gemiddeld 3 keer meer en vereis te minste 300 MJ meer om 1 ton LG konsentraat te smelt. Dit is hoofsaaklik te wydte aan C wat endotermies reageer met FeO om Fe (l) en CO (g) te produseer, in teenstelling met SiC wat eksotermies reageer met FeO om Fe (l), SiO2(l) en CO (g) te produseer. Integrasie van SiC reduksie met LG konsentrate in die bestaande smeltroete by Lonmin Western Platinum Limited is ook voorgestel deur 'n proses vloeidiagram. Uit 'n ekonomiese oogpunt, is daar gevind dat SiC reduksie van 1 ton LG konsentraatvoer met 'n omskakelaarslak byvoeging ongeveer 700 MJ meer benodig as om 1 ton UG2 gemengde konsentraat te smelt en 'n mat-fase te produseer. Dit moet wel in ag geneem word dat die sulfied ryk lae in die Bosveld-kompleks vinnig uitgeput word en dat hierdie alternatiewe prosesse soos SiC reduksie en ʼn allooiversameling proses vinniger as verwagtend benut sal word. Verder, gas hoeveelhede van SiC reduksie is laer en daarom is dit 'n meer omgewingsvriendelik proses. Ten slotte, vanaf die bevindinge van hierdie studie, kan dit gesê word dat basismetale en PGM'e in 'n ysterallooi herwin kan word deur middel van SiC reduksie met LG konsentrate en die toevoeging van omskakelaarslak. Daarom kan die integrasie van so 'n proses in die huidige mat-gebaseerde versameling proses beskou word as 'n alternatief vir die toekoms om UG2 LG konsentrate te smelt.

We have pioneered a novel approach to the synthesis of high-quality and highly uniform few-layer graphene on silicon wafers, based on solid source growth from epitaxial 3C-SiC films [1,2]. The achievement of transfer-free bilayer graphene directly on silicon wafers, with high adhesion, at temperatures compatible with conventional semiconductor processing, and showing record- low sheet resistances, makes this approach an ideal route for metal replacement method for nanodevices with ultimate scalability fabricated at the wafer –level.

published_or_final_version / Physics / Doctoral / Doctor of Philosophy

published_or_final_version / abstract / Electrical and Electronic Engineering / Doctoral / Doctor of Philosophy

In this thesis, intrinsic hydrogenated nanocrystalline silicon thin films for solar cells application have been deposited by means of the hot &ndash / wire chemical vapour deposition (HWCVD) technique and have been characterised for their performance. It is noticed that&nbsp / hydrogenated nanocrystalline silicon is similar in some aspects (mainly optical) to its counterpart amorphous silicon actually used as the intrinsic layer in the photovoltaic industry. Substantial differences between the two materials have been found however in their respective structural and electronic properties.<br /> <br /> We show that hydrogenated nanocrystalline silicon retains good absorption coefficients known for amorphous silicon in the visible region. The order improvement and a reduced content of the bonded hydrogen in the films are linked to their good stability. We argue that provided a moderate hydrogen dilution ratio in the monosilane gas and efficient process pressure in the deposition chamber, intrinsic hydrogenated nanocrystalline silicon with photosensitivity better than 102 and most importantly resistant to the Staebler Wronski effect (SWE) can be produced. <br /> <br /> This work explores the optical, structural and electronic properties of this promising material whose study &ndash / samples have been exclusively produced in the HWCVD reactors based in the Solar Cells laboratory of the Physics department at the University of the Western Cape.

Flexible thermal protection systems are of interest due to their necessity for the success of future atmospheric entry vehicles. Current non-ablative flexible designs incorporate a two-dimensional woven fabric on the leading surface of the vehicle. The focus of this research investigation was to characterize the aerothermal performance of silicon carbide fabric using the 30 kW Inductively Coupled Plasma Torch located at the University of Vermont. Experimental results have shown that SiC fabric test coupons achieving surface temperatures between 1000°C and 1500°C formed an amorphous silicon dioxide layer within seconds after insertion into air plasmas. The transient morphological changes that occurred during oxidation caused a time dependence in the gas / surface interactions which may detrimentally affect the in-flight performance. Room temperature tensile tests of the SiC coupons have shown a rapid strength loss for durations less than 240 seconds due to oxidation. Catastrophic failure and temperature spikes were observed on almost all SiC coupons when exposed to air plasmas at heat fluxes above 80 W/cm2. Interestingly, simulation of entry into the Mars atmosphere using a carbon dioxide plasma caused a material response that was vastly different than the predictable silica layer observed during air plasma exposure.