No / This paper reports on the growth of benzamide crystals in the presence of 2'-aminoacetophenone. The resulting self-replicating intergrowth of benzamide crystals gives rise to ordered crystal aggregates in which individuals share a common c*. This behavior is interpreted using the concept of a motif capper additive which is able to halt the extension of structural motifs at the surface of a growing crystal. In this case the additive was selected to terminate the hydrogen-bonding ribbons, which extend along the b axis of the benzamide structure.

Zirconium tetrachloride (ZrF4) is extensively used in the manufacturing of zirconium metal. The concept of producing zirconium tetrafluoride from dissociated zircon and ammonium bifluoride is well established at the South African Nuclear Energy Corporation (Necsa) State Owned Company (SOC) Limited. Zirconium and hafnium are always found in the same minerals. In nuclear application zirconium is used for structural construction and as a cladding material for fuel, because of the low thermal neutron absorption, while hafnium is used as control rod in nuclear reactor, because of the high thermal neutron absorption. The methods of separating hafnium from zirconium prefer the use of ZrCl4 than ZrF4. This is because of the high solubility in both aqueous solutions and organic solvents and low sublimation temperature of ZrCl4, while ZrF4 is almost insoluble in organic solvent and has a high sublimation temperature. Thermodynamic evaluations showed that chlorinating ZrF4 with either CaCl2, KCl, LiCl or NaCl respectively was not favourable, while chlorinating ZrF4 with either BeCl2 or MgCl2 was favourable. But due to cost consideration chlorinating ZrF4 with BeCl2 was not investigated. A thermogravimetric apparatus was used to investigate the isothermal and the non-isothermal kinetics of chlorinating analytical grade ZrF4 with MgCl2. The thermogravimetric apparatus revealed that chlorination of ZrF4 commence at temperature above 350°C. Isothermal kinetics of chlorinating analytical grade ZrF4 with MgCl2 was investigated at temperatures of 400, 450, 480, 500°C. The reaction progressed towards completion prematurely before the isothermal temperatures were reached, due to a low heating rate of 20 °C/minutes was used to heat up the reaction mixture to the desired isothermal temperatures. As a result, the isothermal kinetics could not be determined. Heating rates of 5, 10, 15 and 20 °C/minutes were used to investigate the non-isothermal kinetics. The apparent activation energy of chlorinating ZrF4 with MgCl2 varied significantly when the non-isothermal kinetics was investigated. The variation was due to changes in the reaction mechanism. As a result, rate law of chlorinating ZrF4 with MgCl2 could not be determined due to variation of the apparent activation energy. Crude ZrF4 prepared at Necsa SOC ltd. was chlorinated with MgCl2, a mixture of MgCl2 and KCl, a mixture of MgCl2 and LiCl, and a mixture of MgCl2 and NaCl respectively. Chlorination of the crude ZrF4 was conducted at temperatures of 400, 450 and 500°C respectively. The aim of chlorinating the crude ZrF4 was to investigating the effect of the chlorinating on the purity of the produced ZrCl4. A batch reactor was used in this study. The reactor was divided into two sections, namely the reaction zone and the condensation zone. The diameter of the condensation zone was larger than that of the reaction zone. Reactants were placed into the reaction zone and the products were collected at the reaction zone and the condensation zone. Samples were collected from these products and analysed using for X-Ray Diffraction analysis (XRD) and Inductive Coupled Plasma Optical Emissions Spectroscopy (ICP-OES). XRD was used to identify the compounds that were present in the products and ICP-OES was used to determine the concentration of the elements that were present in the products. The analysis of the results obtained showed that the highest recovery of zirconium in the products collected from the condensation zone, the sublimed products, was achieved by chlorinating ZrF4 with MgCl2 at 500°C. About 80% was recovered. About 96% of the concentration of the impurities in the sublimed products was reduced when ZrF4 was chlorinated with a mixture of MgCl2 and LiCl at 450°C. About 36% of hafnium in the sublimed products was reduced when ZrF4 was chlorinated with a mixture of MgCl2 and NaCl at 400°C. / Chemical Engineering / M.Tech. (Chemical Engineering)

O uso de materiais orgânicos em dispositivos eletrônicos, além de menor custo e facilidade de processamento, permite obter flexibilidade e transparência. Entretanto, para que a aplicação comercial desses materiais seja viável, os processos que ocorrem nos dispositivos ainda precisam ser mais bem compreendidos, visando maior eficiência e tempo de vida. É de grande importância o estudo das interfaces entre o semicondutor orgânico e os contatos metálicos, onde ocorre transferência de portadores de carga, e a interface com o dielétrico em transistores orgânicos (OFETs), onde se forma o canal de condução. As interfaces de dispositivos eletrônicos poliméricos foram estudadas, utilizando-se Espectroscopia SFG (do inglês Sum Frequency Generation). Esta técnica obtém um sinal com a soma das frequências de dois feixes incidentes sobrepostos, em um processo seletivo a meios onde não há simetria de inversão, como no caso de interfaces. Com aplicação de um feixe de excitação na região visível e outro sintonizável no infravermelho médio, a espectroscopia SFG fornece um espectro vibracional da interface e permite o estudo do ordenamento e da orientação dos grupos moleculares. Foram construídos e analisados OFETs de poli-3-hexiltiofeno (P3HT) preparados sobre substrato de vidro ou silício, utilizando como isolante óxido de silício e/ou poli-metil-metacrilato (PMMA). Foram obtidos espectros in situ do canal de OFETs em operação, observando pequenas alterações na forma de linha, porém a baixa relação sinal/ruído não permitiu obter conclusões detalhadas. Foi constatada a manifestação de bandas da camada isolante de PMMA como consequência da aplicação de campo elétrico. Este fenômeno foi considerado como uma nova ferramenta para estudar a distribuição de cargas e campo elétrico no canal de transistores. Não foram detectados sinais de degradação irreversível no polímero semicondutor a curto prazo, e a mudança de comportamento elétrico foi atribuída majoritariamente a dopagem por oxigênio absorvido no material. / The usage of organic materials in electronic devices allows not only low cost and ease of processing but also flexibility and transparency. However, to achieve viable commercial application, the processes involved on the devices operation must still be better comprehended, aiming for improved efficiency and life time. There is great importance in the study of the interfaces between organic semiconductors and metallic contacts, where charge transfer takes place, and between the dielectric and semiconductor layers of organic transistors (OFETs), where the conducting channel is formed. The interfaces in polymeric electronic devices were studied by SFG spectroscopy (Sum Frequency Generation). In this technique, a signal with frequency that equals the sum of those of two incident beams is generated in a process only allowed in media without inversion symmetry, such as interfaces. Using a visible excitation beam and a tunable infrared one, SFG spectroscopy yields a vibrational spectrum of the interface and provides information about the conformation and orientation of molecular groups. Poly-3-hexylthiophene (P3HT) OFETs were fabricated using glass or silicon substrates and silicon oxide and/or poly-methyl-methacrylate (PMMA) for the dielectric layer. SFG spectra were acquired in situ from the channel region of operating OFETs, observing small changes in lineshape, but low signal-to-noise ration did not allow a detailed interpretation. It was found that PMMA vibrational bands appeared when polarizing the device. This phenomenon was considered a new tool for studying the electric field and charge distribution along transistor channels. It was not noted any sign of short term irreversible degradation of the semiconducting polymer, and the change in the electrical behavior was attributed mainly to doping of the polymer by oxygen absorbed in the material.

O uso de materiais orgânicos em dispositivos eletrônicos, além de menor custo e facilidade de processamento, permite obter flexibilidade e transparência. Entretanto, para que a aplicação comercial desses materiais seja viável, os processos que ocorrem nos dispositivos ainda precisam ser mais bem compreendidos, visando maior eficiência e tempo de vida. É de grande importância o estudo das interfaces entre o semicondutor orgânico e os contatos metálicos, onde ocorre transferência de portadores de carga, e a interface com o dielétrico em transistores orgânicos (OFETs), onde se forma o canal de condução. As interfaces de dispositivos eletrônicos poliméricos foram estudadas, utilizando-se Espectroscopia SFG (do inglês Sum Frequency Generation). Esta técnica obtém um sinal com a soma das frequências de dois feixes incidentes sobrepostos, em um processo seletivo a meios onde não há simetria de inversão, como no caso de interfaces. Com aplicação de um feixe de excitação na região visível e outro sintonizável no infravermelho médio, a espectroscopia SFG fornece um espectro vibracional da interface e permite o estudo do ordenamento e da orientação dos grupos moleculares. Foram construídos e analisados OFETs de poli-3-hexiltiofeno (P3HT) preparados sobre substrato de vidro ou silício, utilizando como isolante óxido de silício e/ou poli-metil-metacrilato (PMMA). Foram obtidos espectros in situ do canal de OFETs em operação, observando pequenas alterações na forma de linha, porém a baixa relação sinal/ruído não permitiu obter conclusões detalhadas. Foi constatada a manifestação de bandas da camada isolante de PMMA como consequência da aplicação de campo elétrico. Este fenômeno foi considerado como uma nova ferramenta para estudar a distribuição de cargas e campo elétrico no canal de transistores. Não foram detectados sinais de degradação irreversível no polímero semicondutor a curto prazo, e a mudança de comportamento elétrico foi atribuída majoritariamente a dopagem por oxigênio absorvido no material. / The usage of organic materials in electronic devices allows not only low cost and ease of processing but also flexibility and transparency. However, to achieve viable commercial application, the processes involved on the devices operation must still be better comprehended, aiming for improved efficiency and life time. There is great importance in the study of the interfaces between organic semiconductors and metallic contacts, where charge transfer takes place, and between the dielectric and semiconductor layers of organic transistors (OFETs), where the conducting channel is formed. The interfaces in polymeric electronic devices were studied by SFG spectroscopy (Sum Frequency Generation). In this technique, a signal with frequency that equals the sum of those of two incident beams is generated in a process only allowed in media without inversion symmetry, such as interfaces. Using a visible excitation beam and a tunable infrared one, SFG spectroscopy yields a vibrational spectrum of the interface and provides information about the conformation and orientation of molecular groups. Poly-3-hexylthiophene (P3HT) OFETs were fabricated using glass or silicon substrates and silicon oxide and/or poly-methyl-methacrylate (PMMA) for the dielectric layer. SFG spectra were acquired in situ from the channel region of operating OFETs, observing small changes in lineshape, but low signal-to-noise ration did not allow a detailed interpretation. It was found that PMMA vibrational bands appeared when polarizing the device. This phenomenon was considered a new tool for studying the electric field and charge distribution along transistor channels. It was not noted any sign of short term irreversible degradation of the semiconducting polymer, and the change in the electrical behavior was attributed mainly to doping of the polymer by oxygen absorbed in the material.

La miniaturisation des appareils électroniques et la multiplication de leurs fonctionnalités conduisent à développer des microsources d’énergie adaptées, parmi lesquelles figurent les microbatteries au lithium. Malgré leurs excellentes performances, ces systèmes de stockage électrochimique tout solide restent toutefois limités en termes de capacité surfacique. Cette caractéristique étant intrinsèquement liée aux matériaux d’électrodes, nous avons choisi de nous intéresser à des couches minces de CuO, dont la capacité volumique théorique (426 µAh .cm-2.µm-1) est sensiblement plus élevée que celle des matériaux d’intercalation utilisés jusqu’à présent. Ce matériau réagit avec le lithium selon un mécanisme particulier, dit de conversion, qui induit la formation d’un système multiphasé et nanostructuré d’une grande complexité. Dans le cadre de ce travail, la compréhension des mécanismes électrochimiques et chimiques mis en jeu au cours du cyclage de couches minces d’oxyde de cuivre (CuO) a été l’objectif majeur. Celui-ci a nécessité une caractérisation fine du matériau actif d’électrode et des interfaces générées (interfaces solide/solide et interface solide/électrolyte). Ces études ont été principalement menées à partir de la Spectroscopie Photoélectronique à Rayonnement X (XPS), de la Microscopie à Force Atomique (AFM) et d’une modélisation théorique exploitant les méthodes de la chimie quantique. Les propriétés chimiques et morphologiques des couches minces de CuO cyclées ont été corrélées à leur comportement électrochimique. Une forte influence de leur structure et de leur morphologie initiales a pu être ainsi mise en évidence / The miniaturization of electronic components and the increasing number of their functionalities lead to the development of suitable energy microsources, among which lithium microbatteries appear. Despite the excellent performances of these all-solid-state electrochemical power sources, one main limitation that remains is their surface capacity. Its value being intrinsically connected to the nature of electrode materials, we chose to focus on CuO thin films which are characterized by a theoretical volumetric capacity (426 µAh .cm-2.µm-1) in far larger than the one of conventional intercalation materials used today. Indeed, this material reacts with lithium according to a particular mechanism, referred as conversion reaction, inducing the formation of a multiphase nanostructured system with a high complexity. In the framework of this study, understanding of electrochemical and chemical mechanisms which take place during the cycling of copper oxide thin films (CuO) was the main objective. This one has required a fine characterization of the electrode active material and the generated interfaces (solid/solid interfaces and solid/electrolyte interface). These studies have been mainly carried out with X-ray Photoelectron Spectroscopy (XPS), Atomic Force Microscopy (AFM) and theoretical approaches based on quantum chemistry methods. The chemical and morphological properties of the cycled CuO thin films have been linked to their electrochemical behavior. An important influence of their initial structure and morphology was then evidenced.

Submitted by Celso Magalhaes (celsomagalhaes@ufrrj.br) on 2017-05-04T13:32:15Z No. of bitstreams: 2 2012 - Camilla Moretto dos Reis-Vol1.pdf: 1863013 bytes, checksum: 5fa46c188ac85027e33b3f48437e7d93 (MD5) 2012 - Camilla Moretto dos Reis-Vol2.pdf: 3610423 bytes, checksum: 9d3a5c0af42a031668e742fc1156f436 (MD5) / Made available in DSpace on 2017-05-04T13:32:15Z (GMT). No. of bitstreams: 2 2012 - Camilla Moretto dos Reis-Vol1.pdf: 1863013 bytes, checksum: 5fa46c188ac85027e33b3f48437e7d93 (MD5) 2012 - Camilla Moretto dos Reis-Vol2.pdf: 3610423 bytes, checksum: 9d3a5c0af42a031668e742fc1156f436 (MD5) Previous issue date: 2012-08-03 / Conselho Nacional de Desenvolvimento Cient?fico e Tecnol?gico - CNPq / Nowadays the demand for cleaner and more efficient synthetic processes have been deemed very important, especially due to environmental aspects. Thus, this thesis describes the synthesis of a series of 20 tiossemicarbazidas, nine class of N4-substituted obtained from the reaction of isothiocyanates with different hydrazine hydrate and eleven Class of N1,N4-disubstituted obtained from the reaction of isothiocyanates with different phenyl hydrazine. We used the traditional method by stirring at room temperature, the microwave irradiation and solid-solid maceration for preparing such compounds, the latter methodology to that presented the best performances for the compounds synthesized in only two minutes of reaction. The antioxidant activity of tiossemicarbazidas was evaluated experimentally by the method of DPPH, indicating significant activity for most of the derivatives tested. The tiossemicarbazidas N4-substituted synthetic precursors were derived from the class of 36 thiosemicarbazones, which have also been obtained by three different methodologies from the reaction of different aromatic aldehydes with tiossemicarbazidas N4-substituted. The methodology used by traditional reflux, the microwave irradiation in the presence of organic solvent and microwave irradiation in the absence of solvent, the latter method was allowed to obtain products with better results with only 3 minutes of reaction. All 36 of thiosemicarbazones derivatives were tested against the fungi Candida albicans and Aspergillus parasiticus, with moderate activity for some of the derivatives tested. The tiossemicarbazidas N1,N4-disubstituted are synthetic precursors of the 1,3,4-thiadiazolium-2-aminide hydrochlorides mesoionic class. Eleven mesoionic derivatives were obtained by microwave irradiation, from tiossemicarbazidas N1,N4-disubstituted with different aromatic aldehydes. We also evaluated the cytotoxic activities from some of the synthesized mesoionic lines K562 human leukemia and Jurkat, as well as in the line of Daudi lymphoma, obtaining satisfactory and very promising results for some of the compounds tested. Furthermore, the compounds mesoionic were tested for in vivo activity against L. amazonensis and L. infantum and also opposite the trypanothione reductase enzyme L. amazonensis, L. infantum, L. braziliensis and T. cruzi showing significant activity indicating the potential use of these compounds as anti-parasitic agents / Nos dias atuais as demandas por processos sint?ticos mais limpos e eficientes t?m sido consideradas muito relevantes, devido especialmente aos aspectos ambientais. Assim, este trabalho de tese relata a s?ntese de uma s?rie de 20 tiossemicarbazidas, sendo nove da classe das N4-substitu?das, obtidas a partir da rea??o de diferentes isotiocianatos com hidrazina hidrato e onze da classe das N1,N4-dissubstitu?das obtidas a partir da rea??o de diferentes isotiocianatos com fenil hidrazina. Utilizou-se a metodologia tradicional por agita??o a temperatura ambiente, a irradia??o de micro-ondas e a macera??o s?lido-s?lido para a prepara??o desses compostos, sendo esta ?ltima metodologia a que apresentou os melhores rendimentos para os compostos sintetizados em apenas 2 minutos de rea??o. A atividade antioxidante das tiossemicarbazidas foi avaliada experimentalmente pelo m?todo do DPPH, indicando atividade significativa para a maioria dos derivados testados. As tiossemicarbazidas N4-substitu?das foram os precursores sint?ticos de 36 derivados da classe das tiossemicarbazonas, que tamb?m foram obtidas por tr?s metodologias diferentes a partir da rea??o de diferentes alde?dos arom?ticos com as tiossemicarbazidas N4-substitu?das. Utilizou-se a metodologia tradicional por refluxo, a irradia??o de micro-ondas na presen?a de solvente org?nico e a irradia??o de micro-ondas na aus?ncia de solvente, esta ?ltima metodologia foi a que permitiu a obten??o dos produtos com melhores rendimentos em apenas 3 minutos de rea??o. Todos os 36 derivados das tiossemicarbazonas foram testados frente aos fungos Aspergillus parasiticus e Candida albicans, apresentando moderada atividade para alguns dos derivados ensaiados. As tiossemicarbazidas N1,N4-dissubstitu?das foram os precursores sint?ticos dos cloridratos mesoi?nicos da classe 1,3,4-tiadiaz?lio-2-aminida. Onze derivados mesoi?nicos foram obtidos via irradia??o de micro-ondas, a partir das tiossemicarbazidas N1,N4-dissubstitu?das com diferentes alde?dos arom?ticos. Foram avaliadas, tamb?m, as atividades citot?xicas de alguns dos mesoi?nicos sintetizados nas linhagens leuc?micas humanas K562 e Jurkat, assim como na linhagem de linfoma Daudi, obtendo-se resultados bastante promissores e satisfat?rios para alguns dos compostos ensaiados. Al?m disso, os compostos mesoi?nicos foram ensaiados quanto ? atividade in vivo frente a L. amazonensis e L. infantum e tamb?m frente ? enzima tripanotiona redutase de L. amazonensis, L. infantum, L. braziliensis e T. cruzi mostrando atividade significativa indicando a potencial utiliza??o desses compostos como agentes anti-parasit?rios.

Made available in DSpace on 2014-12-17T14:07:15Z (GMT). No. of bitstreams: 1 MariaVMS_Parcial.pdf: 533267 bytes, checksum: dfba6ad9f2b0c2ad0d26dac46721fabf (MD5) Previous issue date: 2013-10-31 / Coordena??o de Aperfei?oamento de Pessoal de N?vel Superior / The refractory metal carbides have proven important in the development of engineering materials due to their properties such as high hardness, high melting point, high thermal conductivity and high chemical stability. The niobium carbide presents these characteristics. The compounds of niobium impregnated with copper also have excellent dielectric and magnetic properties, and furthermore, the Cu doping increases the catalytic activity in the oxidation processes of hydrogen. This study aimed to the synthesis of nanostructured materials CuNbC and niobium and copper oxide from precursor tris(oxalate) oxiniobate ammonium hydrate through gas-solid and solid-solid reaction, respectively. Both reactions were carried out at low temperature (1000?C) and short reaction time (2 hours). The niobium carbide was produced with 5 % and 11% of copper, and the niobium oxide with 5% of copper. The materials were characterized by X-Ray Diffraction (XRD), Rietveld refinement, Scanning Electron Microscopy (SEM), X-Ray Fluorescence Spectroscopy (XRF), infrared spectroscopy (IR), thermogravimetric (TG) and differential thermal analysis (DTA , BET and particle size Laser. From the XRD analysis and Rietveld refinement of CuNbC with S = 1.23, we observed the formation of niobium carbide and metallic copper with cubic structure. For the synthesis of mixed oxide made of niobium and copper, the formation of two distinct phases was observed: CuNb2O6 and Nb2O5, although the latter was present in small amounts / Os carbetos de metais refrat?rios t?m se revelado importantes no desenvolvimento de materiais de engenharia devido as suas propriedades, tais como: alta dureza, alto ponto de fus?o, alta condutividade t?rmica e alta estabilidade qu?mica. O carbeto de ni?bio apresenta essas caracter?sticas. Os compostos de ni?bio impregnados com cobre tamb?m possuem excelentes propriedades diel?tricas e magn?ticas e, al?m disso, a dopagem com Cu aumenta a atividade catal?tica em processos de oxida??o de hidrog?nio. Este trabalho teve como objetivo a s?ntese dos materiais CuNbC e ?xido de ni?bio e cobre nanoestruturados a partir do precursor tris(oxalato)oxiniobato de am?nio hidratado, atrav?s de rea??o g?s-s?lido e s?lido-s?lido, respectivamente. Para ambos, as rea??es foram realizadas a baixa temperatura (1000?C) e curto tempo de rea??o (2 horas). O carbeto de ni?bio foi produzido com 5% e 11% de cobre e o ?xido de ni?bio e cobre com 5% de cobre. Os materiais obtidos foram caracterizados atrav?s dos ensaios de Difra??o de Raios X (DRX), Refinamento Rietveld, Microscopia Eletr?nica de Varredura (MEV), Espectroscopia por Fluoresc?ncia de Raios-X (FRX), Espectroscopia de Infravermelho (IV), Termogravim?trica (TG), An?lise Termodiferencial (DTA), BET e granulometria a Laser. A partir das an?lises de DRX e do refinamento Reitiveld para o CuNbC com S= 1,23, observou-se a forma??o do carbeto de ni?bio e cobre puro com estrutura c?bica. Na s?ntese realizada do ?xido misto de ni?bio e cobre correu a forma??o de duas fases distintas: CuNb2O6 e Nb2O5, embora a ?ltima tenha sido formada em pequena quantidade / 2020-01-01

Les composites Cu-Cr sont couramment utilisés comme matériaux de contact électrique pour ampoules à vide des disjoncteurs de moyenne tension. Pourtant très répandu, le frittage en phase solide de ces matériaux a été relativement peu étudié. L’optimisation du procédé passe par la compréhension des mécanismes de frittage. Cette étude est focalisée sur deux aspects importants du frittage : les processus d’oxydo-réduction liés aux oxydes de surfaces des poudres et la compétition entre mécanismes de densification et de gonflement au cours du frittage.L’oxydo-réduction a été étudiée par analyse thermogravimétrique couplée à différentes techniques de spectroscopie d’abord sur les matériaux purs puis sur les composites. Des analyses des interfaces par des coupes réalisées au FIB ont permis de préciser la localisation de l’oxyde dans les matériaux frittés. Un transfert d’oxygène a lieu entre les poudres de cuivre et de chrome. L’intensité de ce transfert dépend de la nature réductrice de l’atmosphère utilisée.La densification a été analysée par dilatométrie sur les matériaux purs et sur les composites. Ces analyses ont été appuyées par des observations microstructurales, notamment par tomographie des rayons X. L’effet des paramètres du procédé (atmosphère, vitesse de chauffage, poudres…) a été étudié. Les résultats montrent le lien entre la désoxydation des poudres de cuivre et le frittage. Un phénomène de gonflement du cuivre seul s’explique par le dégazage du cuivre à haute température lors de la fermeture des pores. Ce gonflement n’a pas lieu dans les composites Cu-Cr car le chrome retarde la fermeture des pores et piège les gaz émis par le cuivre en formant l’oxyde Cr2O3. L’atmosphère de frittage, la morphologie et la taille des poudres de chrome influent sur la densification. Le frittage sous vide permet de réduire la porosité. Une morphologie sphérique des particules de chrome limite l’effet inhibiteur de celui-ci sur la densification. Pour de faibles tailles de particules, le chrome participe à la densification, ce qui permet de mieux densifier le matériau. Ces résultats ouvrent des voies d’optimisation du procédé de frittage des matériaux.Les matériaux élaborés ont été testés dans leurs conditions d’utilisation, c'est-à-dire lors de coupures sur court-circuit en ampoule à vide. Ces essais ont montré l’intérêt de réduire la quantité d’oxyde de chrome et ont permis de déterminer l’effet des impuretés rencontrées usuellement sur les poudres de cuivre et de chrome. / Cu-Cr composites are commonly used as contact materials for medium voltage circuit breakers vacuum bottles. Solid state sintering process of Cu-Cr composites is widespread but has been relatively little studied. Optimizing the process requires understanding the sintering mechanisms. This study was focused on two important aspects of sintering: the redox reactions associated to oxides on the powder surface and the competition between densification and swelling mechanisms during sintering.The redox reactions were studied by thermogravimetric analysis coupled to various spectroscopic techniques, first on isolated Cu and Cr, then on Cu-Cr composites. Interfaces analyses obtained by FIB clarified the location of the oxide inside the sintered materials. Oxygen transfer takes place between copper and chromium powders. This phenomenon strongly depends on the reducing character of the sintering atmosphere.Densification was analyzed by dilatometry on Cu, Cr and Cu-Cr composites. This analysis was supported by microstructural observations, including X-ray tomography .The effect of process parameters (atmosphere, heating rate, powders ...) was studied. The results show the relationship between sintering and copper oxide reduction. The swelling phenomenon of copper compacts is explained by high temperature degassing of copper during pore closure. This swelling does not occur in Cu-Cr composites as chromium delays pore closing and entraps the gases released by copper. Sintering atmosphere, chromium morphology and chromium particle size affect densification. Vacuum sintering reduces porosity. Chromium particles with spherical shape limit its inhibiting effect on densification. For small particle sizes, chromium participates to densification, leading to better densification of the material. These results open the route for optimizing the sintering of Cu-Cr composites.Cu-Cr composites were tested for short circuit performance in vacuum interrupters. The result of these tests showed the importance of reducing the chromium oxide amount. The effect of impurities commonly encountered on the powders copper and chromium powders was also determined.

Zirconium tetrachloride (ZrF4) is extensively used in the manufacturing of zirconium metal. The concept of producing zirconium tetrafluoride from dissociated zircon and ammonium bifluoride is well established at the South African Nuclear Energy Corporation (Necsa) State Owned Company (SOC) Limited. Zirconium and hafnium are always found in the same minerals. In nuclear application zirconium is used for structural construction and as a cladding material for fuel, because of the low thermal neutron absorption, while hafnium is used as control rod in nuclear reactor, because of the high thermal neutron absorption. The methods of separating hafnium from zirconium prefer the use of ZrCl4 than ZrF4. This is because of the high solubility in both aqueous solutions and organic solvents and low sublimation temperature of ZrCl4, while ZrF4 is almost insoluble in organic solvent and has a high sublimation temperature. Thermodynamic evaluations showed that chlorinating ZrF4 with either CaCl2, KCl, LiCl or NaCl respectively was not favourable, while chlorinating ZrF4 with either BeCl2 or MgCl2 was favourable. But due to cost consideration chlorinating ZrF4 with BeCl2 was not investigated. A thermogravimetric apparatus was used to investigate the isothermal and the non-isothermal kinetics of chlorinating analytical grade ZrF4 with MgCl2. The thermogravimetric apparatus revealed that chlorination of ZrF4 commence at temperature above 350°C. Isothermal kinetics of chlorinating analytical grade ZrF4 with MgCl2 was investigated at temperatures of 400, 450, 480, 500°C. The reaction progressed towards completion prematurely before the isothermal temperatures were reached, due to a low heating rate of 20 °C/minutes was used to heat up the reaction mixture to the desired isothermal temperatures. As a result, the isothermal kinetics could not be determined. Heating rates of 5, 10, 15 and 20 °C/minutes were used to investigate the non-isothermal kinetics. The apparent activation energy of chlorinating ZrF4 with MgCl2 varied significantly when the non-isothermal kinetics was investigated. The variation was due to changes in the reaction mechanism. As a result, rate law of chlorinating ZrF4 with MgCl2 could not be determined due to variation of the apparent activation energy. Crude ZrF4 prepared at Necsa SOC ltd. was chlorinated with MgCl2, a mixture of MgCl2 and KCl, a mixture of MgCl2 and LiCl, and a mixture of MgCl2 and NaCl respectively. Chlorination of the crude ZrF4 was conducted at temperatures of 400, 450 and 500°C respectively. The aim of chlorinating the crude ZrF4 was to investigating the effect of the chlorinating on the purity of the produced ZrCl4. A batch reactor was used in this study. The reactor was divided into two sections, namely the reaction zone and the condensation zone. The diameter of the condensation zone was larger than that of the reaction zone. Reactants were placed into the reaction zone and the products were collected at the reaction zone and the condensation zone. Samples were collected from these products and analysed using for X-Ray Diffraction analysis (XRD) and Inductive Coupled Plasma Optical Emissions Spectroscopy (ICP-OES). XRD was used to identify the compounds that were present in the products and ICP-OES was used to determine the concentration of the elements that were present in the products. The analysis of the results obtained showed that the highest recovery of zirconium in the products collected from the condensation zone, the sublimed products, was achieved by chlorinating ZrF4 with MgCl2 at 500°C. About 80% was recovered. About 96% of the concentration of the impurities in the sublimed products was reduced when ZrF4 was chlorinated with a mixture of MgCl2 and LiCl at 450°C. About 36% of hafnium in the sublimed products was reduced when ZrF4 was chlorinated with a mixture of MgCl2 and NaCl at 400°C. / Chemical Engineering / M.Tech. (Chemical Engineering)

Cette thèse est consacrée à l’étude de l’outil d’épitaxie HVPE (Hydride Vapour Phase Epitaxy) pour la synthèse avec et sans catalyseur de nanofils semiconducteurs GaN et GaAs. Une étude systématique de l’influence des conditions expérimentales sur la croissance des fils de GaN est effectuée, afin de démontrer la faisabilité de cette croissance sur la surface des substrats saphir plan-c et silicium sans aucun traitement de la surface préalablement à la croissance. Nous avons démontré la croissance par VLS-HVPE, de nanofils de GaN de diamètres constants de 40 à 200 nm, de longueurs supérieures à 60 μm et présentant des qualités optique et cristallographique remarquables. Pour les nanofils de GaAs, la stabilité, inédite, de la phase cubique zinc-blende pour des diamètres de 10 nm a été démontrée par le procédé de croissance VLS-HVPE sur des longueurs de quelques dizaines de micromètres. Les mécanismes de croissance sont discutés à partir des diagrammes de phase et de la physique de la croissance HVPE qui met en oeuvre des précurseurs gazeux chlorés. Pour les semiconducteurs III-V, cette étude permet d’envisager des applications liées aux nanofils longs qui jusque là n’étaient exploitées que pour le silicium. Ces travaux montrent que dans le contexte des Nanosciences, la HVPE, outil épitaxial à fortes vitesses de croissance, mérite une audience élargie, et peut s’inscrire comme un outil complémentaire efficace aux procédés MOVPE et MBE pour le façonnage contrôlé de la matière à l’échelle nanométrique. / This thesis is devoted to the study of HVPE (Hydride Vapour Phase Epitaxy) method of growing GaN and GaAs nanowires with and without catalyst. A systematic study of the influence of the growth conditions on GaN formation was performed in order to demonstrate the feasibility of this growth on c-plane sapphire and silicon substrates without preliminary treatment of the surface. We have demonstrated by VLS-HVPE the growth of the GaN nanowires with constant diameters of 40 to 200 nm and of length up to 60 μm, while they possess remarkable optical and crystal quality. The newly observed stability of the zinc blende structure for GaAs nanowires with diameters of 10 nm has been described by the VLS-HVPE process, for lengths of few tens of micrometers. The growth mechanisms are discussed based on the phase diagram and the physics of near-equilibrium HVPE using chloride precursors. For III-V semiconductors, the study allows us to consider applications related to long nanowires that, at present, are used only for silicon. This work shows that in the context of Nanoscience, the fast growth HVPE method deserves a wider audience and thus could be considered as an effective complementary tool to MOVPE and MBE processes for the controlled shaping of matter on the nanoscale.