My thesis is focused on realization of three inrush current limitors samples. This limiters will be used in ABB´s metal-clad, air-insulated switchgears for medium voltage distribution. On the basis of the results there is chosen the sample with optimal properties suitable for practice in the conclusion.

The aim of the study was to design, build and experimentally verify a programmable thermostat. The main control unit of the thermostat is an ATmega168 microcontroller which communicates via I2C bus with remote MAX6615 chips. They are used to measure temperature with a set of thermistors and control the flow of the hot water in the heating system. This work deals with issues of remote control through the I2C bus, servomotor steering, precision temperature measurement and describes the inner workings of the system. The next chapter includes a proposal for possible extension of the system. The last part contains the manual of the control menu structure and a brief description of the software.

The thesis describes movement optimization of a linear thermoelectric actuator that is used for operating floor heating valves in modern buildings. Featuring experimental nature, the thesis deals with a problem specified by an industrial company within the following steps; definition of possible solutions based on problem research, experimental verification of selected propositions, the best solution selection resulting from the analysis of executed measurements, final verification with all product versions, benchmarking.

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Organische Halbleiterbauelemente sind eine vielversprechende Technologie, die das Spektrum der optoelektronischen Halbleiterbauelemente erweitert und etablierte Technologien basierend auf anorganischen Halbleitermaterialien ersetzen kann. Für Display- und Beleuchtungsanwendungen werden sie z. B. als organische Leuchtdioden oder Transistoren verwendet. Eine entscheidende Eigenschaft organischer Halbleitermaterialien ist, dass die Ladungstransporteigenschaften stark von der Temperatur im Bauelement beeinflusst werden. Insbesondere nimmt die elektrische Leitfähigkeit mit der Temperatur zu, so dass Selbsterhitzungseffekte, einen großen Einfluss auf die Leistung der Bauelemente haben. Mit steigender Temperatur nimmt die elektrische Leitfähigkeit zu, was wiederum zu größeren Strömen führt. Dies führt jedoch zu noch höheren Temperaturen aufgrund von Joulescher Wärme oder Rekombinationswärme. Eine positive Rückkopplung liegt vor. Im schlimmsten Fall führt dieses Verhalten zum thermischen Durchgehen und zur Zerstörung des Bauteils. Aber auch ohne thermisches Durchgehen führen Selbsterhitzungseffekte zu interessanten nichtlinearen Phänomenen in organischen Bauelementen, wie z. B. die S-förmige Beziehung zwischen Strom und Spannung. In Regionen mit negativem differentiellen Widerstand führt eine Verringerung der Spannung über dem Bauelement zu einem Anstieg des Stroms durch das Bauelement. Diese Arbeit soll einen Beitrag zur mathematischen Modellierung, Analysis und numerischen Simulation von organischen Bauteilen leisten. Insbesondere wird das komplizierte Zusammenspiel zwischen dem Fluss von Ladungsträgern (Elektronen und Löchern) und Wärme diskutiert. Die zugrundeliegenden Modellgleichungen sind Thermistor- und Energie-Drift-Diffusion-Systeme. Die numerische Diskretisierung mit robusten hybriden Finite-Elemente-/Finite-Volumen-Methoden und Pfadverfolgungstechniken zur Erfassung der in Experimenten beobachteten S-förmigen Strom-Spannungs-Charakteristiken wird vorgestellt. / Organic semiconductor devices are a promising technology to extend the range of optoelectronic semiconductor devices and to some extent replace established technologies based on inorganic semiconductor materials. For display and lighting applications, they are used as organic light-emitting diodes (OLEDs) or transistors. One crucial property of organic semiconductor materials is that charge-transport properties are heavily influenced by the temperature in the device. In particular, the electrical conductivity increases with temperature, such that self-heating effects caused by the high electric fields and strong recombination have a potent impact on the performance of devices. With increasing temperature, the electrical conductivity rises, which in turn leads to larger currents. This, however, results in even higher temperatures due to Joule or recombination heat, leading to a feedback loop. In the worst case, this loop leads to thermal runaway and the complete destruction of the device. However, even without thermal runaway, self-heating effects give rise to interesting nonlinear phenomena in organic devices, like the S-shaped relation between current and voltage resulting in regions where a decrease in voltage across the device results in an increase in current through it, commonly denoted as regions of negative differential resistance. This thesis aims to contribute to the mathematical modeling, analysis, and numerical simulation of organic semiconductor devices. In particular, the complicated interplay between the flow of charge carriers (electrons and holes) and heat is discussed. The underlying model equations are of thermistor and energy-drift-diffusion type. Moreover, the numerical approximation using robust hybrid finite-element/finite-volume methods and path-following techniques for capturing the S-shaped current-voltage characteristics observed in experiments are discussed.

Currently, the concept of multipurpose spacecrafts is being transformed into many small spacecrafts each of them performing specific tasks and thus leading to the realization of pico and nano satellites. No matter what is the application or size, demand for more number of IR channels for earth observation is ever increasing which necessitates significant reduction in the mass, power requirement and cost of the IR detectors. In this scenario, several order of magnitude mass and power savings associated with uncooled IR arrays are advantageous compared to cooled photon detectors. However the poor speed of response of uncooled microbolometer array devices obstruct the total replacement of cooled detectors in thermal imaging applications. This is especially true when the mission requires 50 m to 100 m ground resolution, in which even the "fastest" micro bolometer arrays turns "too slow" to follow the ground trace when looked from low earth orbit (LEO). Hence there is a great and unfulfilled requirement of faster uncooled detector arrays for meeting the demand for future micro and mini satellite projects for advanced missions. The present thesis describes the systematic studies carried out in development of high performance IR and THz detectors for space applications. Ge-Si-O thin films are prepared by ion beam sputtering technique with argon (Ar) alone and argon and oxygen as sputtering species, using sputtering targets of different compositions of Ge and SiO2. The deposited thin films are amorphous in nature and have chemical compositions close to that of the target. The study of electrical properties has shown that the activation energy and hence the thermistor constant (β) and electrical resistivity (ρ) are sensitive to oxygen flow rate, and they are the least for thin films prepared with Ar alone as the sputtering species. Different thermal isolation structures (TIS), consisting of silicon nitride (Si3N4) membrane of different thicknesses, Ge-Si-O thin film and, chromium coating on the rear side of the membrane, are prepared by bulk micro-machining technique, whose thermal conductance (Gth) properties are evaluated from the experimentally determined current-voltage (I-V) characteristics. Gth shows non-linear dependence with respect to raise in temperature of thin film thermistor due to Joule heating. The infrared micro-bolometer detectors, fabricated using one of the TIS structures have shown responsivity (<v) close to 115 V W−1 at a bias voltage of 1.5 V and chopping frequency of 10 Hz, thermal time constant (τth) of 2.5 ms and noise voltage of 255 nV Hz−1⁄2 against the corresponding thermal properties of Gth and thermal capacitance Cth equal to 9.0 × 10−5 W K−1 and 1.95 × 10−7 J K−1 respectively. The detectors are found to have uniform spectral response in the infrared region from 2 µm to 20 µm, and NEDT in the range from 108 mK to 574 mK when used with an F/1 optical system. The detector, in an infrared earth sensor system, is tested before an extended black body which simulates the earth disc in the laboratory and the results are discussed. As an extension of the single element detector to array device, design of a microbolometer array for earth sensor dispensing of scanning mechanisms is presented. It makes use of four microbolometer arrays with in-line staggered configuration that stare at the earth horizons, perceiving IR radiation in the spectral band of 14 µm to 16 µm. Design of the microbolometer has been carried out keeping in mind low power, lightweight, without compromising on the performance. An array configuration of 16 × 2 pixels is designed and developed for this purpose. Finite elemental analysis is carried out for design optimization to yield best thermal properties and thus high performance of the detectors. Suitable optical design configuration was arrived to image the earth horizon on to array. Using this optimum design, prototype arrays have been fabricated, packaged and tested in front of the black body radiation source and found to have Responsivity, NEP, and D∗ of 120 V W−1, 5.0 W Hz−1⁄2, 1.10 × 107 cm Hz1⁄2 W−1 respectively. The pixels show a uniform response within a spread of ±6 % and the pixel resistances are within a range of ±5 %. Optically Immersed Bolometer IR detectors are fabricated using electron beam evaporated Vanadium Oxide as the sensing material. Spin coated polyimide is used as medium to optically immerse the sensing element to the flat surface of a hemispherical germanium lens. This optical immersion layer also serves as the thermal impedance control layer and decides the performance of the devices in terms of responsivity and noise parameters. The devices have been packaged in suitable electro-optical packages and the detector parameters are studied in detail. Thermal time constant varies from 0.57 ms to 6.1 ms and responsivity from 75VW−1 to 757VW−1 corresponding to polyimide thickness in the range 2.0 μm to 70 μm for a detector bias of 9V. Highest D obtained was 1.28 × 108 cm Hz1⁄2W−1. Noise Equivalent Temperature Difference (NETD) of 20mK is achieved for devices with polyimide thickness of 32 μm, whereas the NETD × th product is the lowest for devices with moderate thickness of thermal impedance layer. Bolometric THz detectors were fabricated using V2O5 as sensing element immersed onto germanium hemispherical lens using polyimide as immersion media. These detectors were characterized for their efficiency in detection of THz radiation in the range 10 THz to 35 THz emitted by a black body radiator. The responsivity of the devices determined in four different frequency bands covering the spectrum of interest and a maximum responsivity of 398VW−1 was observed. A variation in the responsivity is observed which is due to the characteristics absorption of polyimide in the THz region of interest and can be avoided by replacing with HDPE which has less attenuation. NEP of 6.8 × 10−10WHz−1⁄2 was observed which is very close to the state of art in the case of uncooled detectors which entitles the detectors for spectroscopic applications. Specific Detectivity D* was observed to be much higher than the conventional detectors thanks to the benefits of immersion. NETD of 26mK was observed which is advantageous of application of these detectors in imaging applications These studies have lead to development of a new technology for fabrication of high performance IR and THz detectors which can be used for spectroscopic and imaging applications. Further, this technology can be scaled for development of linear and area arrays finding applications where the speed of respnose as well as sensitivity are of equal importance. from 0.57 ms to 6.1 ms and responsivity from 75 V W−1 to 757 V W−1 corresponding to polyimide thickness in the range 2.0 µm to 70 µm for a detector bias of 9 V. Highest D∗ obtained was 1.28 × 108 cm Hz1⁄2 W−1. Noise Equivalent Temperature Difference (NETD) of 20 mK is achieved for devices with polyimide thickness of 32 µm, whereas the NETD × τth product is the lowest for devices with moderate thickness of thermal impedance layer. Bolometric THz detectors were fabricated using V2O5 as sensing element immersed onto germanium hemispherical lens using polyimide as immersion media. These detectors were characterized for their efficiency in detection of THz radiation in the range 10 THz to 35 THz emitted by a black body radiator. The responsivity of the devices determined in four different frequency bands covering the spectrum of interest and a maximum responsivity of 398 V W−1 was observed. A variation in the responsivity is observed which is due to the characteristics absorption of polyimide in the THz region of interest and can be avoided by replacing with HDPE which has less attenuation. NEP of 6.8 × 10−10 W Hz−1⁄2 was observed which is very close to the state of art in the case of uncooled detectors which entitles the detectors for spectroscopic applications. Specific Detectivity D* was observed to be much higher than the conventional detectors thanks to the benefits of immersion. NETD of 26 mK was observed which is advantageous of application of these detectors in imaging applications These studies have lead to development of a new technology for fabrication of high performance IR and THz detectors which can be used for spectroscopic and imaging applications. Further, this technology can be scaled for development of linear and area arrays finding applications where the speed of respnose as well as sensitivity are of equal importance.

The present work aimed to laser sintering and physical characterization of barium titanate ceramics doped with lanthanum, Ba1-xLaxTiO3 (0.1 ≤ x ≤ 0.4) mol%, and co-doped with manganese, in order to study the PTC effect (Positive Temperature Coefficient of Resistance). In electrical and electronic equipments, materials that exhibit PTC effect are generally used in circuit protection, or as temperature sensors (thermistors), whose main advantages of thermistors are no contacts subject to corrosion, high resistance to mechanical shock, the long operating life, low cost and more stable than thermocouples. Additionally, the laser sintering process uses a CO2 laser as the main heating source. This process has been touted as a promising technology for the ceramic processing, which are subjected to extremely high heating and cooling rates (~ 2000 ° C / min). During the processes of synthesis and characterization Differential Thermal Analysis (DTA), Thermogravimetry (TG), Dilatometry, Differential Scanning Calorimetry, X-ray Diffraction, Scanning Electron Microscopy, Impedance Spectroscopy and Conductive Microscopy Atomic Force (CAFM) technique were used. Lanthanum doped barium titanate powders were produced via solid state reaction method and calcined at 1200 ° C for 4 hours. The laser sintering process was efficient to obtain ceramics with relative density of up to 95%. The sintered ceramics presented homogeny microstructure surface under the condition of Pmax = 5.5 W/mm2 for 60 seconds. The 02BT La sample showed the lowest room temperature resistivity (104 .cm). This value is roughly three orders of magnitude lower than that observed for conventionally sintered ceramic in electric furnace and with the same dopant concentration. Finally, it is clear that the sintering conditions strongly modify the PTC behavior of the like-BaTiO3 ceramics, thus allowing the fabrication of ceramic components for the thermistors manufacture with different characteristics. / O presente trabalho teve como objetivos a sinterização a laser e a caracterização físicas de cerâmicas de titanato de bário dopadas com lantânio, Ba1-xLaxTiO3 (0,1 ≤ X ≤ 0,4) mol%, e co-dopadas com manganês, visando estudar o efeito PTC (Coeficiente positivo de resistência com a elevação da temperatura). Em equipamentos eletro-eletrônicos os materiais que exibem o efeito PTC geralmente são utilizados na proteção de circuitos ou como sensores de temperatura (termistores), cujas principais vantagens dos termistores são a inexistência de contatos sujeitos à corrosão, a alta resistência a choques mecânicos, a longa vida de operação, baixo custo, e são mais estáveis que os termopares. Adicionalmente, o processo de sinterização a laser utiliza como principal fonte de calor um laser de CO2. Este processo tem sido apontado como uma técnica promissora no processamento de corpos cerâmicos, os quais são submetidos a taxas de aquecimento e resfriamento extremamente elevadas (~2000 °C/min), podendo provocar assim alterações em suas propriedades físicas. Durante os processos de síntese e caracterização fez-se uso das técnicas de Diferencial de Análise Térmica (DTA), Termogravimétria (TG), Dilatometria, Calorimétria Exploratória Diferencial, Difração de raios X, Microscopia Eletrônica de Varredura e Espectroscopia de Impedância e de Microscopia de Força Atômica em modo condutivo (CAFM). Pós de titanato de bário dopados com lantânio foram sintetizados pelo método da reação de estado sólido e calcinados a 1200 oC por 4 horas. O processo e sinterização a laser se mostrou eficiente para obtenção de cerâmicas com densidade relativa de até 95%. Foi obtida uma homogeneidade na microestrutura em toda a superfície da cerâmica, sob a condição de Pmax = 5,5 W/mm2 por 60s. A amostra 02BT:La apresentou menor valor de resistividade à temperatura ambiente, da ordem de 104 .cm. Este valor é aproximadamente três ordens de grandeza menor que o observado para a cerâmica sinterizada convencionalmente em forno elétrico e na mesma concentração de dopante. Finalmente, é possível afirmar que as condições de sinterização modificam fortemente o comportamento PTC em cerâmicas a base de BaTiO3, possibilitando dessa forma a confecção de cerâmicas para fabricação de componentes termistores com diferentes características.

The brushed DC motor is a source of electromagnetic emission that may cause interference. The main issues with brushed DC motor are arcing, which occurs between the brushes and commutator, and inrush current. It is possible to decrease the electromagnetic emissions by addressing the source (brushed dc motor) and the installation. The source may be addressed by using filters in the form of X2Y-capacitors on the terminals or ferrites on the cables. The installation does not produce any emission, but it is possible to lower its contribution. This is done by altering the installation like changing the placement of cables and provide good coupling. An effective way of decreasing inrush currents is by using negative-thermal-coefficient (NTC) thermistors. Another measure to improve the EMC properties of the brushed DC motor is to design the motor so that it can trap EM emissions. Some of these parameters are motor house material, end-cap material, vent holes or slots on motor housing, placement of power terminals, crimping tabs and motor enclosure.

In 3D-printers, accurate control of temperature is important and most often a thermistor is used to regulate it. However, while thermistors are cheap, they tend to be quite inaccurate at the wide temperature range of 3D-printers. And since they need to be in contact with the object they are measuring, they have to withstand the temperature that the object operates in. This work explores the possibility and viability of using a contactless solution for temperature feedback for the PID-regulator in 3D-printers instead of thermistors. Originally this work was supposed to use a thermal camera but because of unforeseen shipping problems, the thermal camera did not arrive in time, instead an IR-thermometer was used. The work was done by modifying the software of the 3D-printer to receive temperature from an external source, two available pins on the motherboard of the 3D printer were connected to a Raspberry Pi and with a custom made communication protocol and modified firmware, temperature data could be transferred between them. An IR-thermometer was mounted on the extruder of the 3D-printer, measuring the temperature of the heating block, it was also connected to the Raspberry Pi and its reported temperature was sent to the 3D-printer. To measure the performance of the different solutions, important data was logged and a visual inspection of printed parts were conducted. The results of the work showed that it was possible to replace the thermistor with a contactless IR-thermometer with a print quality that was on par with the original solution. It was also found that the IR-thermometer had a faster response-time to changes in temperature compared to the thermistor. The IR-thermometer should also have a wider object temperature-range than the thermistor but because this work was delimited to one specific thermoplastic material with one temperature-range, this was not tested. In conclusion the contactless solution had a result better than expected and is a promising proof of concept. The price of the contactless solution is magnitudes higher than that of the thermistor but with its promising accuracy and response time to changes in temperature it could be a viable solution for industrial applications.