Les travaux présentés dans cette thèse s'inscrivent dans le cadre des télécommunications optiques à haut-débit sur courtes distances. L'ère numérique dans laquelle nous vivons pousse les architectures actuelles à évoluer aussi rapidement que le besoin en débit. Les réseaux d'accès et data-centers doivent d'ores et déjà évoluer, notamment au niveau des composants et sous-systèmes chargés de détecter les signaux optiques après leur transmission : les photorécepteurs. La montée en débit à 40 Gb/s et au-delà est limitée par l'architecture actuelle des photorécepteurs dont l'interfaçage entre ses deux fonctions primaires (photodétection[PD]/amplification[TIA]) limite la bande passante. Les solutions présentées, visant à limiter la parallélisation multi-longueurs d'onde des composants et ainsi les coût de déploiement, proposent d'augmenter la rapidité des modules photorécepteurs en optimisant leur architecture. Deux axes d'optimisation sont alors proposés au niveau du photorécepteur : Une approche co-packaging ayant pour objectif de considérer les deux fonctions clés du photorécepteur comme des boîtes noires auxquelles il convient d'ajouter un circuit externe permettant d'augmenter la bande passante, et une approche co-design visant à concevoir un nouveau circuit amplificateur transimpédance (TIA) intégrant directement une fonction de pré-égalisation adaptée à la photodiode permettant de repousser la fréquence de coupure du récepteur. / This thesis falls within the scope of high-speed short-reach optical communication where the growing need in data transfer forces the current architectures to evolve as quickly. Acces network and data-center components and subsystems must follow this growth, especially on the photoreceiver side. 40 Gb{s and beyond high-speed communications are limited by the current photoreceiver architecture, which, due to the integration of both of its main functions (photodetection[PD]/amplification[TIA]), limits the maximum achievable bandwitdh. In order to reduce the amount of components and price caused by multi-architectures, photoreceivers bandwidth must be increased. Two solutions are proposed so that the photoreceiver performances can be optimized : A co-packaging approach in which both main functions of the photoreceiver are considered as black boxes to which must be added an external circuit allowing to increase the bandwidth, and a co-design approach in which a new transimpedance amplifier (TIA) is designed, integrating a pre-equalizing function based on the photodiode characteristics, allowing an enhancement of the photoreceiver bandwitdh.

As one of the more mature quantum technologies, quantum random number generators (QRNGs) fill an important role in producing secure and private keys for use in cryptogra- phy in e.g. quantum key distribution (QKD) systems. Many available QRNGs are expen- sive and optical QRNGs often require complex optical setups. If a reliable QRNG could be implemented using less expensive components they could become more widespread and be used in common applications like encryption and simulation. Shot noise is a possible entropy source for these kinds of random number generators. For such a generator to be classified as a QRNG the origin of the shot noise must be controlled and verifiable. This project aims to investigate how an entropy source could be implemented using the shot noise generated by an illuminated photodiode. This requires the design and construction of the accompanying electro-optical front-end used to prepare a signal for sampling. The successful estimation of the electron charge e is used as a way to verify that shot noise is present in the sampled signal. Suitable component values and operating points are also in- vestigated and it is shown that quite low gain (10 000) is suitable for the current-to-voltage amplifier which amplifies the signal generated by the photodiode. For this configuration an estimate of e was achieved with a relative error of 3%. In conclusion this is a promising and interesting approach for generating random numbers at high rates and at low cost. Whether the correct estimation of e is enough to certify that the device is sampling noise from the quantum regime is however not completely clear and further investigation is likely needed.

This report describes the design and implementation of a prototype for an amplitude modulated laser rangefinder, which is made on a PCB consisting of a laser module emitting light, a photodiode receiving the light reflected from the target, and other components. The design is made for the different power levels, generation of the modulation output and the reception of the signal. The sinusoidal wave is generated with an oscillator circuit and filtered out to produce a pure sine signal. The system requires different voltage levels and current values, which is done with DC-DC converters. Finally, a receiver circuit is implemented to detect the modulation, which needs a device that transfers light energy into voltage. Many tests have been made to optimize the analog circuit for a stable output. The prototype was created as a PCB design with a laser module and a photodiode mounted on it. In the end, satisfactory results were obtained up to the receiving part, however, the prototype was tested with an external circuit for light detection. There is considerable room for improvement, e.g., signal sampling, working receiver and use of standard voltage levels, but this thesis intends to provide a basis for future work.

O objetivo do presente trabalho é o desenvolvimento de um dispositivo MOS como sensor de imagem química para a detecção e classificação de gases de hidrogênio e amônia através da técnica de escaneamento de luz pulsada (TELP). O dispositivo MOS foi fabricado sobre substrato de silício (100) e resistividade de 10 -cm. A porta do dispositivo foi constituída de um eletrodo bimetálico de Au-Pd com espessura nanométrica. Foi proposto um sistema automático de posicionamento X Y para o escaneamento do feixe de luz pulsada baseado no controle PID e no software Labview®. O processo de aquisição de dados foi também automatizado via instrumentação virtual definida pelo software Labview®. A partir das curvas CxV dos capacitores MOS foram extraídos os parâmetros estruturais dos dispositivos mostrando-se estes valores concordantes com os valores definidos no projeto inicial. Adicionalmente foi determinada a largura máxima da camada de depleção sendo este parâmetro importante na sensibilidade da resposta do sensor. O dispositivo MOS em ambiente inerte (N2) apresentou máxima sensibilidade de fotocorrente para polarização de 0,6 V correspondente à máxima largura de depleção. Em ambientes de H2 e NH3, o máximo de sensibilidade foi deslocado para tensões menores a 0,6 V atribuindo-se este fato à adsorção de átomos de Hidrogênio na interface metal/SiO2. As imagens químicas obtidas a partir da resposta do sensor MOS em modo de operação TELP para ambientes de H2 e NH3, respectivamente, apresentaram padrões característicos a cada tipo de gás independentemente da concentração utilizada permitindo a classificação plena destes gases. Os resultados obtidos no presente trabalho sugerem a possibilidade de implementação de um sistema de nariz eletrônico apenas utilizando um único sensor. / The aim of the present work is the development of a MOS device as a sensor of chemical image, for the detection and classification of hydrogen and ammonia gases, through the Scanning Light Pulse Technique (SLPT). The MOS device was fabricated onto silicon bulk (100) and resistivity of 10 -cm. The gate of the device was built from an Au-Pd bimetallic electrode, with nanometric thickness. It was proposed an X Y automatic position system for scanning the light pulsed beam, based on the PID control and on the Labview® software. The data acquisition process was also automated via virtual instrumentation defined by the Labview® software. From the C x V characteristic curves of the MOS capacitors, the device structural parameters were extracted, showing accordance with values defined in the initial project. Furthermore, it was determined the maximum depletion layer width. This parameter is important for the sensibility response of the sensor. The MOS device, in inert environment (N2), has shown photocurrent maximum sensibility for 0,6 V polarization, corresponding to the maximum depletion layer width. In H2 and NH3 environments, the maximum sensibility was dislocated for voltages lower than 0,6V, attributing it to the hydrogen atom adsorption at the metal/SiO2 interface. The chemical images obtained from the MOS sensor response, in SLPT operation mode for H2 and NH3 environments, respectively, showed characteristic patterns to each kind of gas, independent of the concentration used, allowing the complete classification of these gases. The results obtained in the present work suggest the possibility of implementing an electronic nose system, using only one sensor.

O objetivo do presente trabalho é o desenvolvimento de um dispositivo MOS como sensor de imagem química para a detecção e classificação de gases de hidrogênio e amônia através da técnica de escaneamento de luz pulsada (TELP). O dispositivo MOS foi fabricado sobre substrato de silício (100) e resistividade de 10 -cm. A porta do dispositivo foi constituída de um eletrodo bimetálico de Au-Pd com espessura nanométrica. Foi proposto um sistema automático de posicionamento X Y para o escaneamento do feixe de luz pulsada baseado no controle PID e no software Labview®. O processo de aquisição de dados foi também automatizado via instrumentação virtual definida pelo software Labview®. A partir das curvas CxV dos capacitores MOS foram extraídos os parâmetros estruturais dos dispositivos mostrando-se estes valores concordantes com os valores definidos no projeto inicial. Adicionalmente foi determinada a largura máxima da camada de depleção sendo este parâmetro importante na sensibilidade da resposta do sensor. O dispositivo MOS em ambiente inerte (N2) apresentou máxima sensibilidade de fotocorrente para polarização de 0,6 V correspondente à máxima largura de depleção. Em ambientes de H2 e NH3, o máximo de sensibilidade foi deslocado para tensões menores a 0,6 V atribuindo-se este fato à adsorção de átomos de Hidrogênio na interface metal/SiO2. As imagens químicas obtidas a partir da resposta do sensor MOS em modo de operação TELP para ambientes de H2 e NH3, respectivamente, apresentaram padrões característicos a cada tipo de gás independentemente da concentração utilizada permitindo a classificação plena destes gases. Os resultados obtidos no presente trabalho sugerem a possibilidade de implementação de um sistema de nariz eletrônico apenas utilizando um único sensor. / The aim of the present work is the development of a MOS device as a sensor of chemical image, for the detection and classification of hydrogen and ammonia gases, through the Scanning Light Pulse Technique (SLPT). The MOS device was fabricated onto silicon bulk (100) and resistivity of 10 -cm. The gate of the device was built from an Au-Pd bimetallic electrode, with nanometric thickness. It was proposed an X Y automatic position system for scanning the light pulsed beam, based on the PID control and on the Labview® software. The data acquisition process was also automated via virtual instrumentation defined by the Labview® software. From the C x V characteristic curves of the MOS capacitors, the device structural parameters were extracted, showing accordance with values defined in the initial project. Furthermore, it was determined the maximum depletion layer width. This parameter is important for the sensibility response of the sensor. The MOS device, in inert environment (N2), has shown photocurrent maximum sensibility for 0,6 V polarization, corresponding to the maximum depletion layer width. In H2 and NH3 environments, the maximum sensibility was dislocated for voltages lower than 0,6V, attributing it to the hydrogen atom adsorption at the metal/SiO2 interface. The chemical images obtained from the MOS sensor response, in SLPT operation mode for H2 and NH3 environments, respectively, showed characteristic patterns to each kind of gas, independent of the concentration used, allowing the complete classification of these gases. The results obtained in the present work suggest the possibility of implementing an electronic nose system, using only one sensor.

Master's thesis is focused on designing optical converter for EMC measurement transfering signal through noisy enviroment. First part contains analysis of electromagnetic interference and its coupling and measurement, especially types of probes for interference maesurement. Next part passing through designing of optoelectric and electrooptic converter with digital intensity modulation. Last part is about realization of optical converter.

O presente trabalho descreve o desenvolvimento e implementação de duas configurações distintas de um receptor optoeletrônico integrado. A primeira configuração é similar a um projeto encontrado na literatura mas apresenta diversas modificações que lhe conferiram melhor desempenho em comparação ao projeto original. A segunda configuração é uma nova proposta deste trabalho. O receptor foi desenvolvido e implementado visando sua aplicação em redes de comunicações ópticas passivas (PONs) de alta velocidade comutadas a pacote, para possibilitar a utilização da técnica de multiplexação em comprimento de onda (WDM), aumentando assim a capacidade de transmissão da rede, em particular no ramo de ligação da rede de serviços com o usuário final, denominado rede de acesso. O principal objetivo do receptor aqui desenvolvido foi proporcionar uma sintonia rápida entre os canais disponíveis na rede, possibilitando sua seleção num tempo inferior àquele necessário para a transmissão de um único pacote de informação, diminuindo assim o atraso de sintonia e, por conseguinte, a perda de informação. Para tanto, os circuitos integrados implementados e caracterizados referem-se aos circuitos de chaveamento eletrônico e do amplificador de transimpedância das duas configurações investigadas. Os dados experimentais obtidos para as duas configurações confirmaram a previsão de chaveamento dos canais de entrada num intervalo de tempo da ordem de alguns nanosegundos, o que é totalmente compatível com a velocidade de transmissão das aplicações a que se destina este receptor (aproximadamente 5 Gbits/s). Adicionalmente, são apresentados os dados experimentais relativos à freqüência de corte, ganho direto, isolação, relação on/off e características de ruído dos circuitos implementados. / The present work describes the design and implementation of two configurations of an integrated optoelectronic receiver. The first one is similar to a previously reported design but with some modifications to improve its performance. The second one is a new proposal of this work. The goal of the receiver design and implementation was its application in high bit rate packet-switched passive optical networks (PONs) employing the wavelength division multiplexing (WDM) technique to increase the network capacity, in particular on the connection branch of the network core with the final user, the access network. The main goal of the receiver design was to achieve a fast channel tuning, allowing a tuning time smaller than the required for the transmission of a single information packet, decreasing the tuning latency and, therefore, the rate of information packet loss. In order to accomplish this goal, the implemented and tested integrated circuits include the electronic switching circuit and the transimpedance amplifier for both configurations investigated. The measured data for both configurations confirm the expected input channel switching time results, of about a few nanoseconds, which is certainly useful for the expected bit rate of operation (approximate 5 Gbps). Additionally, experimental results concerning cutoff frequency and bandwidth, direct gain, isolation, on/off ratio, and noise characteristics of both implemented circuits are presented.

Frequency reference oscillator is a critical component of modern radio transceivers. Currently, most reference oscillators are based on low-frequency quartz crystals that are inherently bulky and incompatible with standard micro-fabrication processes. Moreover, their frequency limitation (<200MHz) requires large up-conversion ratio in multigigahertz frequency synthesizers, which in turn, degrades the phase-noise. Recent advances in MEMS technology have made realization of high-frequency on-chip low phase-noise MEMS oscillators possible. Although significant research has been directed toward replacing quartz crystal oscillators with integrated micromechanical oscillators, their phase-noise performance is not well modeled. In addition, little attention has been paid to developing electronic frequency tuning techniques to compensate for temperature/process variation and improve the absolute frequency accuracy. The objective of this dissertation was to realize high-frequency temperature-compensated high-frequency (>100MHz) micromechanical oscillators and study their phase-noise performance. To this end, low-power low-noise CMOS transimpedance amplifiers (TIA) that employ novel gain and bandwidth enhancement techniques are interfaced with high frequency (>100MHz) micromechanical resonators. The oscillation frequency is varied by a tuning network that uses frequency tuning enhancement techniques to increase the tuning range with minimal effect on the phase-noise performance. Taking advantage of extended frequency tuning range, and on-chip temperature-compensation circuitry is embedded with the sustaining circuitry to electronically temperature-compensate the oscillator. Finally, detailed study of the phase-noise in micromechanical oscillators is performed and analytical phase-noise models are derived.

Gyroscopes are inertial sensors that measure the rate or angle of rotation. One of the most promising technologies for reaching a high-performance MEMS gyroscope has been development of the micro-hemispherical shell resonator. (μHSR) This thesis presents the electronic control and read-out interface that has been developed to turn the μHSR into a fully functional micro-hemispherical resonating gyroscope (μHRG) capable of measuring the rate of rotation. First, the μHSR was characterized, which both enabled the design of the interface and led to new insights into the linearity and feed-through characteristics of the μHSR. Then a detailed analysis of the rate mode interface including calculations and simulations was performed. This interface was then implemented on custom printed circuit boards for both the analog front-end and analog back-end, along with a custom on-board vacuum chamber and chassis to house the μHSR and interface electronics. Finally the performance of the rate mode gyroscope interface was characterized, showing a linear scale factor of 8.57 mv/deg/s, an angle random walk (ARW) of 34 deg/sqrt(hr) and a bias instability of 330 deg/hr.

O presente trabalho descreve o desenvolvimento e implementação de duas configurações distintas de um receptor optoeletrônico integrado. A primeira configuração é similar a um projeto encontrado na literatura mas apresenta diversas modificações que lhe conferiram melhor desempenho em comparação ao projeto original. A segunda configuração é uma nova proposta deste trabalho. O receptor foi desenvolvido e implementado visando sua aplicação em redes de comunicações ópticas passivas (PONs) de alta velocidade comutadas a pacote, para possibilitar a utilização da técnica de multiplexação em comprimento de onda (WDM), aumentando assim a capacidade de transmissão da rede, em particular no ramo de ligação da rede de serviços com o usuário final, denominado rede de acesso. O principal objetivo do receptor aqui desenvolvido foi proporcionar uma sintonia rápida entre os canais disponíveis na rede, possibilitando sua seleção num tempo inferior àquele necessário para a transmissão de um único pacote de informação, diminuindo assim o atraso de sintonia e, por conseguinte, a perda de informação. Para tanto, os circuitos integrados implementados e caracterizados referem-se aos circuitos de chaveamento eletrônico e do amplificador de transimpedância das duas configurações investigadas. Os dados experimentais obtidos para as duas configurações confirmaram a previsão de chaveamento dos canais de entrada num intervalo de tempo da ordem de alguns nanosegundos, o que é totalmente compatível com a velocidade de transmissão das aplicações a que se destina este receptor (aproximadamente 5 Gbits/s). Adicionalmente, são apresentados os dados experimentais relativos à freqüência de corte, ganho direto, isolação, relação on/off e características de ruído dos circuitos implementados. / The present work describes the design and implementation of two configurations of an integrated optoelectronic receiver. The first one is similar to a previously reported design but with some modifications to improve its performance. The second one is a new proposal of this work. The goal of the receiver design and implementation was its application in high bit rate packet-switched passive optical networks (PONs) employing the wavelength division multiplexing (WDM) technique to increase the network capacity, in particular on the connection branch of the network core with the final user, the access network. The main goal of the receiver design was to achieve a fast channel tuning, allowing a tuning time smaller than the required for the transmission of a single information packet, decreasing the tuning latency and, therefore, the rate of information packet loss. In order to accomplish this goal, the implemented and tested integrated circuits include the electronic switching circuit and the transimpedance amplifier for both configurations investigated. The measured data for both configurations confirm the expected input channel switching time results, of about a few nanoseconds, which is certainly useful for the expected bit rate of operation (approximate 5 Gbps). Additionally, experimental results concerning cutoff frequency and bandwidth, direct gain, isolation, on/off ratio, and noise characteristics of both implemented circuits are presented.