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1	Investigation and Characterization of AlGaN/GaN Device Structures and the Effects of Material Defects and Processing on Device Performance Jessen, Gregg Huascar 20 December 2002 (has links) No description available. III-Nitride AlGaN/GaN AlGaN GaN heterostructure heterojunction interfaces defects threading dislocation devices HEMT HFET HBT memory effect transistor fabrication characterization CLS Cathodoluminescence LEEN yellow luminescence
2	Structural and optical impact of transition metal implantation into zinc oxide single crystals and nanowires / Strukturelle und optische Auswirkungen derÜbergangsmetallimplantation in ZnO Einkristalle und Nanodrähte Müller, Sven 30 March 2009 (has links) No description available. 530 Physik Mathematics and Computer Science Nanodraht Zinkoxid Photolumineszenz Kathodolumineszenz Ionenimplantation Leuchtzentren Dotierung Übergangsmetalle Eisen Nickel Mangan Kobalt Vanadium interstitieller Sauerstoff interstitielles Zink grünes Lumineszenzband rot-gelbes Lumineszenzband intra-3d Lumineszenz Zweiphasen Raman Röntgenbeugung nanowire zinc oxide photoluminescence cathodoluminescence ion implantation color center doping transition metals iron nickel manganese cobalt vanadium interstitial oxygen interstitial zinc green luminescence band red-yellow luminescence band intra-3d-shell luminescence secondary phases raman X-ray diffraction 33.07 33.61 33.72 RVC 520: Gitterschwingungen RVQ 000: Halbleiter {Physik}

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Investigation and Characterization of AlGaN/GaN Device Structures and the Effects of Material Defects and Processing on Device Performance

Structural and optical impact of transition metal implantation into zinc oxide single crystals and nanowires / Strukturelle und optische Auswirkungen derÜbergangsmetallimplantation in ZnO Einkristalle und Nanodrähte