Yes / A characteristic loop locus of dc power versus RF output power was observed as the frequency was varied around the optimum point of an operational active antenna. A new technique was introduced into the simulation, plotting the dependence of parameters such as supply current, efficiency or output power on internal impedance as seen by the naked transistor. It is now clear that the loop was formed as a consequence of the interaction of the transistor packaging elements with the patch impedances.

This thesis work is mainly focused on studying RF performance degradation of a low noise amplifier (LNA) circuit due to hot carrier effect (HCE) in both the weak and strong inversion regions. Since the figures of merit for the RF circuit characterization are gain, noise figure, input, and output matching, the LNA RF performance drift is evaluated in a Cadence SpectreRF simulator subject to these features. This thesis presents hot carrier induced degradation results of an LNA to show that the HCE phenomenon is one of the serious reliability issues in the aggressively scaled RF CMOS design, especially for long-term operation of these devices. The predicted degradation from simulation results can be used design reliable CMOS RF circuits.

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