Die vorliegende Arbeit befasst sich mit dem Einfluss einer hyperthermischen Stickstoffionenbestrahlung (Ekin < 25 eV) auf das Galliumnitrid-Schichtwachstum. Dabei wird insbesondere der Einfluss einer Oberflächenrekonstruktion, einer Strukturierung der Oberfläche, einer Zwischenschicht (Pufferschicht) und der Einfluss verschiedener Siliziumsubstratorientierungen auf das epitaktische Wachstum von dünnen Galliumnitrid-Schichten nach einer hyperthermischen Stickstoffionenbestrahlung diskutiert. Ziel war es, möglichst dünne, epitaktische und defektarme Galliumnitrid-Schichten zu erhalten. Für die Charakterisierung der Galliumnitrid-Schichten und der Siliziumsubstrate standen diverse Analysemethoden zur Verfügung. Die kristalline Oberflächenstruktur konnte während des Wachstums mittels Reflexionsbeugung hochenergetischer Elektronen beobachtet werden. Nachfolgend wurde die Oberflächentopografie, die kristalline Struktur und Textur, sowie die optischen Eigenschaften der Galliumnitrid-Schichten mittels Rasterkraftmikroskopie, Röntgenstrahl-Diffraktometrie, hochauflösender Transmissionselektronenmikroskopie und Photolumineszenzspektroskopie untersucht.

A novel process for low-temperature (LT) epitaxial growth of silicon carbide (SiC) by replacing the growth precursor propane with chloro-methane was recently developed at Mississippi State University. However, only limited information was available about the defects and impurity incorporation in the various types of epitaxial layers produced by this new method like blanket epitaxial layers, selectively grown epitaxial mesas, and highly doped epitaxial layers, prior to their comprehensive characterization in this work. Molten potassium hydroxide (KOH) etching, mechanical polishing and a variety of other characterizing techniques were used to delineate and identify the defects both in the epilayer and substrates. Under optimum growth conditions, the concentration of defects in the epitaxial layers was found to be less than that in the substrate, which established the good quality of the LT growth process. Defect concentrations, on selectively grown epitaxial layers, strongly depended on the crystallographic orientation of the mesa sidewall. The addition of HCl to the growth process, aimed at increasing the growth rate, caused a significant concentration of triangular defects (TDs) to be formed in the epitaxial layers. The TDs were traced down to the substrate by a combination of repeated polishing and molten KOH etching steps. The TDs were found not to originate from any substrate defects. Their origin was traced to polycrystalline silicon islands which form on the surface during growth and subsequently get evaporated away, which had made it impossible to detect them and suspect their influence on the TD generation prior to this work. The TDs were found to include single or multiple stacking faults bound by partial dislocations and, in some cases, inclusions of other SiC polytypes. Gradual degradation of the epitaxial morphology was found in heavily aluminum doped p+ layers, with an increase in the level of doping, followed by much steeper degradation when approaching the solubility limit of Al in 4H-SiC. Precipitates were the dominating defect at the highest levels of doping and were observed beyond a doping of 3.5x1020 cm-3. A dislocation generation model for heavily doped epitaxial layers was developed accounting for the stress in the lattice caused by Al doping.

No description available.

[pt] Se faz um estudo detalhado sobre o crescimento de GaInNAs pela técnica de metalorganic vapor phase epitaxy (MOVPE) com o objetivo de diminuir a contaminação residual do carbono no material. Para isso se pesquisa a influência dos precursores assim como dos diferentes parâmetros de crescimento na morfologia, na contaminação residual e na incorporação de diferentes elementos nos materiais. A temperatura, a taxa de crescimento, a razão As/III, o conteúdo do nitrogênio e os diferentes precursores são os parâmetros alterados de uma amostra para a outra. Como alguns precursores não foram usados antes para este material semicondutor, inicialmente apenas o GaAs foi examinado, passando posteriormente aos materiais ternários GaInAs e GaNAs, para finalmente obter o GaInNAs. Através da caracterização das amostras obtém-se a qualidade dos materiais assim como a contaminação residual do carbono. São utilizadas técnicas de difração de raios-X de alta resolução (HR-XRD), microscopia de força atômica (AFM), perfil eletroquímico de capacitância-tensão (ECV), espectrometria de massa de íons secundários (SIMS), fotoluminescência (PL) e técnicas in-situ próprias do reator MOVPE para avaliar o efeito dos parâmetros de crescimento epitaxial sobre a qualidade das estruturas obtidas, assim como sobre a incorporação dos diferentes elementos nos materiais. O crescimento do GaInNAs no reator CRIUS foi bem sucedido com algumas combinações dos precursores. Se confirmou que o alto nível do carbono está relacionado à quantidade do nitrogênio no cristal e que o carbono é fornecido pelos grupos metil dos precursores, principalmente pelo TMGa, seguido do TMIn. Todas as medidas para reduzir a incorporação residual do carbono foram bem sucedidas. O uso de precursores do grupo III sem grupo metil reduz significativamente a dopagem residual do carbono. Finalmente foram crescidas células solares para avaliar o material no dispositivo. / [en] A detailed investigation the GaInNAs growth by metalorganc vapor phase epitaxy (MOVPE) is performed in order to reduce the carbon background in the material. For this, the precursors , as well as the different growth parameters influence on crystal morphology, carbon background and the incorporation of different elements on the semiconductor material, are investigated. The temperature, the growth rate, the As/III ratio, the nitrogen content, and the different precursors were varied from one sample to another. Particularly, since some precursors were never used for this semiconductor material, initially, only GaAs was examined, later the GaInAs and the GaNAs ternary materials were grown, to finally obtain the GaInNAs. The samples characterization was used to assess materials quality, as well as the carbon background incorporation. Different characterization techniques such as High-Resolution X-Ray Diffraction (HR-XRD), Atomic Force Microscopy (AFM), Electrochemical Capacitance-Voltage (ECV) and In-Situ measurements were used to evaluate the effect of the epitaxial growth parameters on the quality of the obtained structures, as well as on the different elements incorporation in the semiconductor material. GaInNAs was successfully grown in the MOVPE reactor with particular precursors combinations. The relation between the high carbon level and the nitrogen amount in the crystal was confirmed, as well as the fact that carbon is supplied by methyl-groups of the precursors, especially TMGa, followed by TMIn. All measures to reduce carbon background incorporation were successful. The use of methyl group free III precursors significantly reduces the carbon background incorporation. Finally, solar cells were grown to evaluate the material in the device.

L’intégration de matériaux ferromagnétiques dans des hétérostructures semi-conductrices offre aujourd'hui de nouvelles perspectives dans le domaine de l’électronique de spin. Dans ce manuscrit sont présentés les résultats de la croissance par épitaxie par jets moléculaires d’hétérostructures de Mn5Ge3 sur Ge(111). Le Mn5Ge3 est un composé ferromagnétique jusqu'à température ambiante qui a l’avantage de pouvoir s’intégrer directement au Ge, semiconducteur du groupe IV. S'agissant d'un matériau relativement nouveau, un des efforts majeurs a porté sur la maîtrise de la croissance des couches minces de Mn5Ge3 par la technique d'épitaxie en phase solide (SPE). Un fort accent a été mis sur les caractérisations structurales, la détermination des relations d'épitaxie avec le Ge(111), afin de les relier aux propriétés magnétiques des films. La seconde partie de ce travail a été consacrée à l'étude des processus cinétiques d'incorporation de carbone dans les couches minces de Mn5Ge3. La combinaison des différents moyens de caractérisations structurales et magnétiques a permis d'aboutir à une augmentation notable de la température de Curie tout en conservant une excellente qualité structurale de la couche et de l'interface avec le Ge et une stabilité thermique jusqu’à 850°C. Tous ces résultats indiquent que les couches minces de Mn5Ge3épitaxiées sur Ge(111) apparaissent comme des candidats à fort potentiel pour l'injection de spin dans les semi-conducteurs du groupe IV / Spin-electronics based on ferromagnetic metal/semiconductor systems offer a pathway toward integration of information storage and processing in a single material. This emerging fieldaims to create a new generation of electronic devices where two degrees of freedom will be associated: spin and charge of carriers. In this context, the outcome of this thesis is toelaborate a novel ferromagnetic compound, namely Mn5Ge3, on Ge using molecular beamepitaxy method. The interests in this compound are manyfold: it can be stabilized as a uniquephase on Ge(111) in the form of epitaxial thin films, it is ferromagnetic until room temperature and it is compatible with Si-based conventional microelectronics. In this work,one major effort was devoted to the epitaxial growth of Mn5Ge3 on Ge using Solid PhaseEpitaxy method. By combining structural and magnetic characterizations, we demonstrated high quality epitaxial thin Mn5Ge3 films with good magnetic properties. We also studied theeffect carbon incorporation on the structural and magnetic properties of epitaxial Mn5Ge3films. The carbon-doped films exhibit a high Curie temperature with an atomically smoothinterface and a high thermal stability. All these results show that Mn5Ge3 is a promisingcandidate opening up the ways for spin injection via tunnel effect through the Schottky barrierinto Ge

Le développement des dispositifs issus de l'électronique de spin nécessite de nouveaux matériaux qui permettent d'injecter de manière efficace le courant polarisé en spin dans des semiconducteurs. Parmi de nombreux matériaux utilisés comme injecteurs de spin, les semiconducteurs ferromagnétiques dilués (DMS), obtenus en dopant des semiconducteurs avec des impuretés magnétiques tels que Mn ou Co, sont considérés comme des candidats potentiels pour l'injection de spin. Ces matériaux dopés deviennent ferromagnétiques tout en conservant leurs propriétés semiconductrices. Par conséquent, ils présentent une similarité d'impédance électrique par rapport aux substrats semiconducteurs, ce qui rend efficace l'injection de courant polarisé en spin dans ces derniers. Dans ce contexte, l'objectif principal de cette thèse consiste à étudier la cinétique de croissance des semiconducteurs ferromagnétiques dilués GeMn. Nous cherchons à déterminer les paramètres clés de la croissance des couches de GeMn, à savoir la température du substrat, et la concentration en Mn. Pour la fabrication de dispositifs électroniques fonctionnels, le challenge crucial est d'obtenir des DMS ayant une température de Curie (TC) bien supérieure à la température ambiante. Nous nous sommes donc concentrés sur la cinétique de formation de la phase nanocolonnaire GeMn possédant une TC au-delà de 400 K. / The development of active spintronic devices requires new materials, which enable to efficiently inject spin-polarized currents into non-magnetic semiconductors. Among numerous materials that can be used as spin injectors, diluted magnetic semiconductors (DMS), obtained by doping standard semiconductors with magnetic impurities, such as Mn or Co, have emerged as potential candidates for spin injection. The materials become ferromagnetic while conserving their semiconducting properties. They exhibit therefore natural impedance match to host semiconductors and are expected to efficiently inject spin-polarized currents into semiconductors. In this context, the main objectives of this thesis work consist in studying the growth kinetics of GeMn-based diluted magnetic semiconductors. We aim at determining the main growth parameters, such as the substrate temperature and the Mn concentration, that govern the growth process of GeMn layers. Since for device applications it is crucial to obtain DMS exhibiting a Curie temperature (TC) well above room temperature, we have focused our attention to the kinetic formation of the GeMn nanocolumn phase, which exhibits a Curie temperature higher than 400 K.

L’objectif de cette thèse était de synthétiser des multicouches à base de couches ferromagnétiques GeMn qui sont empilées et séparées par des couches de Ge en utilisant la technique d'épitaxie par jets moléculaires.Outre de nombreuses applications en spintronique issues de cette structure de matériaux, la réalisation de capteurs biochimiques dédiés à la détection moléculaire est l’idée directrice de ce travail. Un tel dispositif présenterait les atouts que ses matériaux constituants apportent : haute sensibilité, sélectivité et compatibilité parfaite avec la technologie de Si-Ge. Dans la première partie de ce manuscrit sont présentés les résultats obtenus de la croissance d’hétérostructures Mn5Ge3, Mn5Ge3Cx sur Ge(111) puis la reprise d’épitaxie de la barrière de Ge sur Mn5Ge3, la première étape avant la croissance de la deuxième couche ferromagnétique. Nous avons également analysé les propriétés structurales et magnétiques de ces couches minces ainsi que les dificultés dues à la croissance de la couche de Ge, notamment la diffusion et la ségrégation. Deux approches utilisant le carbone ont été proposées pour réduire la ségrégation : barrière de diffusion en carbone et remplissage des sites interstitiels du réseau Mn5Ge3 par du carbone. Le second axe alternatif pour la synthèse est consacré à la croissance de la structure colonnaire empilée Ge1-xMnx. Les conditions pour obtenir la structure colonnaire ont été déterminées. Les propriétés structurales et mesures magnétiques ont montré que cette phase était particulièrement intéressant dans la famille des semiconducteurs ferromagnétiques dilués à base de Ge-Mn pour les applications en spintronique et croissance de multicouches. La reprise d’épitaxie de plusieurs couches ferromagnétiques séparées par Ge a été effectuée et l’étude du couplage magnétique a été également menée. Enfin, nous présentons les premiers résultats sur le greffage de porphyrines et de protéines sur diverses surfaces hydrophiles et hydrophobes (Si, Ge), permettant d’accéder aux études de la faisabilité des capteurs Ge/GeMn. L’ensemble de ce travail indique que les multicouches de Ge/GeMn apparaissent comme des candidats à fort potentiel pour la spintronique, notamment pour capteurs bio-chimiques dans les semi-conducteurs du groupe IV. / The objective of this thesis is to synthetize the multilayers based on the sandwiched structure of GeMn ferromagnetic layers by mean of Molecular Beam Epitaxy on Ge substrate. Applications in spintronic field from this study are potential such as structures of spin valves, nanoscale sensors devoted to the detection of biochemical molecules. We actually focus on the biochemical sensors based on GMR (or TMR) phenomenon in stacking layered structure. These devices offer many advantages that the constituent materials may provide : high sensibility, selectivity, and especially, compatibility with Si-Ge technology. The first part of this manuscript presents the results obtained of heterostructure growth of Mn5Ge3, Mn5Ge3Cx on Ge(111), then Ge overgrowth on Mn5Ge3, the first step to study multilayers growth. Also, we have discussed about the structural and magnetic properties of these thin films as well as the problems due to the growth of multilayers, especially the diffusion and segregation. The approaches to reduce the diffusion were proposed by introducing carbon atoms as diffusion barrier or by fulfilling insterstial sites of Mn5Ge3 lattice by carbon atoms. The second axis of materials synthesis is devoted to the growth of multilayers Ge1-xMnx nanocolumn structure. The growth condition of Ge1-xMnx nanocolumns has been determined. We have studied structural and magnetic properties of this phase which are of particular interest to spintronic applications and multilayers growth. The Ge/Ge1-xMnx nanocolumns multilayers have been done and the interlayer exchange coupling between ferromagnetic layers has been studied. Finally, we have presented the preliminary results of porphyrin molecules and protein grafting on hydrophilic and hydrophobic surfaces (Si and Ge). This allows accessing to study the feasibility of Ge/GeMn-based sensors. This work indicates that the Ge/GeMn mutilayers appear to be a potential candidate for spintronics and biochemical sensors in the group IV semi-conductors.

Le développement des structures de grains se formant durant les procédés de soudage par fusion a un large impact sur les propriétés et la résistance mécaniques des assemblages. Des défauts, tels que la fissuration à chaud, sont aussi liés à la texturation de grains propre à l'étape de solidification. La simulation directe du développement tri-dimensionnelle (3D) des structures de grains dans ces procédés, à l'échelle industrielle, est rarement proposée. Dans ce travail, une modélisation couplée 3D Automate Cellulaire (CA) – Eléments Finis (FE) est proposée pour prédire la formation des structures de grains dans les procédés de soudage multipasses GTAW (Gas Metal Arc Welding) et GMAW (Gas Metal Arc Welding). A l'échelle macroscopique, la modélisation FE permet la résolution des équations de conservation de la masse, de l'énergie et de la quantité de mouvement pour l'ensemble du domaine en s'appuyant sur un maillage adaptatif. Pour le procédé GMAW avec apport de matière, le modèle FE est enrichi et développé dans une approche level set (LS) afin de modéliser l'évolution de l'interface métal / air due au développement du cordon de soudure. Le domaine FE contient ainsi la pièce étudiée et l'air environnant dans lequel le cordon se développe. Les calculs FE sont couplés avec l'approche CA utilisée pour modéliser le développement de la structure de grains. Un maillage fixe (‘maillage CA') est superposé au maillage adaptatif FE (‘maillage FE'). Les champs macroscopiques propres au maillage FE sont ainsi interpolés entre le maillage adaptatif FE et le maillage fixe CA. Une nouvelle stratégie d'allocation / désallocation de la grille de cellules CA est ensuite utilisée basée sur l'allocation / désallocation des éléments du maillage CA. La grille CA est constituée d'un ensemble régulier de cellules cubiques superposées au domaine soudée. A l'échelle micro-, la grille est utilisée afin de simuler les étapes de fusion et solidification, à la frontière entre le domaine pâteux et le bain liquide, durant le processus de soudage. Les évolutions de températures des cellules sont définies par interpolation du maillage CA. Un couplage du modèle avec les chemins de solidification et les évolutions enthalpiques tabulés est aussi implémenté, permettant de suivre la thermique et les évolutions de fractions de phase propre à l'évolution du procédé. Avec de réduire les temps de calcul et la quantité de mémoire informatique nécessaire à ces simulations, une optimisation des maillages FE/CA et des tailles de cellules CA est proposée pour les deux approches FE et CA. La modélisation 3D proposée est appliquée à la simulation de la formation des structures de solidification formées durant le soudage GTAW et GMAW multipasses de pièces d'acier inoxydables de nuances UR 2202. Dans le procédé GTAW, l'influence de l'évolution des structures de grains selon les paramètres procédés est étudiée. L'orientation normale des grains avec l'augmentation de la vitesse de soudage est montrée. Dans le procédé GMAW, la modélisation permet de simuler la refusion et la croissance des grains des couches successives. De manière générale, les structures de grains prédites montrent qualitativement les évolutions attendues présentées dans la littérature. / Grain structure formation during fusion welding processes has a significant impact on the mechanical strength of the joint. Defects such as hot cracking are also linked to the crystallographic texture formed during the solidification step. Direct simulation of three-dimensional (3D) grain structure at industrial scale for welding processes is rarely modeled. In this work, a 3D coupled Cellular Automaton (CA) – Finite Element (FE) model is proposed to predict the grain structure formation during multiple passes Gas Tungsten Arc Welding (GTAW) and Gas Metal Arc Welding (GMAW). At the macroscopic scale, the FE model solves the mass, energy and momentum conservation equations for the whole system based on an adaptive mesh. For GMAW with metal addition, the FE model is enriched and established in a level set (LS) approach in order to model the evolution of the metal/air interface due to the weld bead development. The FE domain then contains the workpiece and the surrounding air where the weld bead forms. FE computations are coupled with the CA approach used to model the grain structure evolution. A fixed mesh, referred to as CA mesh, is superimposed to the adaptive FE mesh. FE fields are interpolated between the adaptive FE mesh and the fixed CA mesh. A new dynamic allocation/deallocation strategy of a CA grid of cells is then used based on the dynamic activation/deactivation of the elements of the CA mesh. The CA grid is made of a regular lattice of cubic cells superimposed onto the welded domain. At the micro scale, this grid is used in order to simulate the melting and solidification steps at the boundaries between the mushy domain and the liquid pool during the welding process. The temperature evolutions of the cells are computed by interpolation from the CA mesh. Coupling with tabulated transformation paths and phase enthalpy is also implemented, which permits to track the phase amount and latent heat release during the process. In order to master the resolution time and memory cost of the simulations, a management of the FE/CA mesh dimensions and CA cell size is considered for both FE and CA models. The 3D CAFE model is applied to simulate the formation of solidification structures during multiple passes GTAW and GMAW processes on a duplex stainless steel UR 2202. In GTAW, the evolution of the grain structures with respect to the welding process parameters is considered. The normal orientation of the grains with the increase of the heat source velocity is shown. In GMAW, the model is shown to compute the remelting and growth of successively deposited layers. Overall, the predicted structures qualitatively reveal the expected evolutions presented in the literature.

Este trabalho apresenta o estudo do comportamento da resistência série de fonte e dreno em transistores SOI FinFET de porta tripla e com canal tensionado. Nos dispositivos SOI FinFETs há um aumento da resistência série de fonte e dreno devido ao estreitamento dessas regiões, sendo esse parâmetro considerado como uma das limitações quanto à introdução desses dispositivos em tecnologias futuras. O uso de tensão mecânica no canal dos dispositivos surge como alternativa para aumentar a condução de corrente através do aumento da mobilidade dos portadores do canal, reduzindo assim, a resistência total dos transistores e, conseqüentemente, a resistência série de fonte e dreno. Inicialmente, foi feito o estudo de alguns métodos de extração da resistência série de fonte e dreno existentes na literatura, com o objetivo de se obter o mais adequado para aplicação e análise posterior. Esse trabalho foi realizado baseado em resultados experimentais e em simulações numéricas que possibilitaram o entendimento físico do fenômeno estudado. A resistência série de fonte e dreno foi explorada em diferentes tecnologias, como transistores SOI FinFETs de porta tripla convencionais e sob influência de tensionamento uniaxial e biaxial. O uso do crescimento seletivo epitaxial (SEG) nas regiões de fonte e dreno altamente dopadas das diferentes tecnologias também foi analisado, pois com essa técnica, a resistência série de fonte e dreno é reduzida substancialmente não comprometendo a condução de corrente e a transcondutância. Os resultados obtidos das diferentes tecnologias com e sem o uso de SEG foram analisados e comparados mostrando que em transistores SOI FinFETs de porta tripla, com crescimento seletivo epitaxial, apresentam o menor valor da resistência série de fonte e dreno mesmo para aqueles sem tensão mecânica na região do canal. / This work presents the study of the source and drain series resistance behavior in standard and strained SOI FinFETs triple gate transistors. In SOI FinFETs transistors there is an increase of the source and drain series resistance due to the narrow of these regions, being this parameter a key limiting factor to the next generations. The use of strained transistors is one of the potential technologies to the next generation high performance because it increase the drive current through an enhance in the carrier mobility, decreasing the transistors total resistance and, therefore, the source and drain series resistance. Initially, a study of some series resistance extraction methods, present in the literature was done, in order to obtain the most appropriate for applications and analysis subsequent. This work was done based on experimental results and numerical simulations, enabling the physical understanding of the phenomenon studied. The series resistance was explored in different technologies, as standard SOI FinFETs triple gates and with uniaxial and biaxial strain. The use of selective epitaxial growth (SEG) in the source and drain regions, with high doping levels, was also studied in the different technologies, because with the use of this technique, the series resistance decreases substantially without compromising the drive current and transconductance. The obtained results from the different technologies with and without the use of SEG were analyzed and compared showing that, SOI FinFETs triple gate transistors with SEG present the lower values of series resistance even for standard devices if compared with strained ones without the use of SEG.

Este trabalho apresenta o estudo da influência do tensionamento mecânico (strain) no efeito de abaixamento de barreira induzido pelo dreno (DIBL) em dispositivos SOI FinFETs de porta tripla com e sem crescimento seletivo epitaxial. Também é analisada a influência do uso de crescimento seletivo epitaxial nesses dispositivos em relação ao efeito de canal curto mencionado. O uso de transistores verticais de múltiplas portas tem permitido a continuidade do escalamento dos dispositivos, apresentando melhora nos níveis de corrente bem como a supressão dos efeitos de canal curto. No entanto, ao reduzir a largura do canal, aumenta-se a resistência total do transistor, diminuindo seu desempenho. A fim de melhorar essa característica, as técnicas de tensionamento mecânico e crescimento de fonte e dreno tem sido empregadas. No primeiro caso, ao se deformar mecanicamente a estrutura do canal, altera-se o arranjo das camadas eletrônicas que ocasiona o aumento da mobilidade dos portadores. Conseqüentemente, a corrente aumenta tal como a transcondutância do dispositivo. A técnica de crescimento de fonte e dreno chamada de crescimento seletivo epitaxial (SEG) tem como finalidade reduzir ainda mais a resistência elétrica total da estrutura, uma vez que a área dessas regiões aumenta, possibilitando o aumento das áreas de contato, que são responsáveis pela maior parcela da resistência total. Esse trabalho baseia-se em resultados experimentais e simulações numéricas tridimensionais que analisam o comportamento dos transistores com as tecnologias acima apresentadas em função do efeito de DIBL. / This work presents a study about the influence of strain in the drain induced barrier lowering effect (DIBL) in triple gate SOI FinFETs. Also it is analyzed the selective epitaxial growth used in that structures, comparing their behavior in relation to DIBL effect. Using the vertical multi-gate devices become possible the downscale whereas they present higher current level and suppressed short channel effects. However, reducing the channel width, the transistors total resistance increases and consequently its performance decreases. In order to improve this feature, the strained technology and the Source/Drains growth technique has been employed. In the first case, the mechanical deformation causes a change in the electron shell, which improves the carrier mobility. Consequently, the current level and the transconductance also improve. The selective epitaxial growth technique aims to reduce the devices total resistance since these regions areas increase, allowing large contacts which are responsible for the main parcel of the total resistance. This work is based on experimental results and tridimensional simulations that analyze the transistor behavior using the technologies above presented as a function of DIBL effect.