This aim of this dissertation is to fabrication microlens arrays (MLA) by silicon mold using dry etching technique and imprint on the PET substrate by direct imprinting microlens structures on Polyethylene terephthalate (PET) substrates using Si molds.The MLA on PET substrates can be used to increase light emitting efficiency from OLED. The MLA was formed by first etching the silicon wafers using SF6 process gas in an RIE/ECR system using isotropic etching technique.The concave undercuts obtained after the dry etching was removed by wet-etching the wafer in HF and HNO3 solutions.Finally,the fabricated silicon mold was used to imprint the microlens structure on the PET substrates.The microlens array with 10 £gm and 25 £gm radius on PET substrate were successfully fabricated using the technique.The surface coverage of the MLA of beter than 90% was obtained. In addition,the outcoupling efficiency of an OLED can be increased using the MLA.The brightness enhancement factor of 1.67 was achieved using in the MLA comparision to the simulation result of 1.73.

The work presented in this thesis is primarily concerned with the synthesis and characterization of large, linear heteroacenes and their derivatives. We have been able to significantly expand on the types of materials available for application in organic electronic device architectures. In particular, the work focused on solution processible and novel derivatives of thiadiazoles, diazatetracenes, diazapentacenes, tetrazapentacences, and N,N-dihydrotetraazaheptacene. Extensive computational studies have been performed in order to better understand the optoelectronic properties of these materials. Although no devices have been fabricated that show appreciable hole or electron mobility, the properties of these materials are very promising. Besides our work on organic electronic materials for application in optoelectronic devices, we have also been able to develop, via the Click reaction, a series of aqueous metal sensors for copper (II), nickel (II), and silver (I) based upon fluorescence quenching. The use of a modified Stern-Volmer equation was necessary to fit the data in order to obtain binding constants. The exploration of new materials and their properties in the area of organic electronics is an exciting field for the synthetic organic chemist, as the goals associated with this work strive to impact humanity in a positive manner by reducing energy costs.

Le sujet de cette thèse se situe dans le contexte de l'électronique organique à base de polymères conjugués. Nous avons choisi la famille des polyfluorènes principalement en raison de leur émission dans le bleu, leur bon rendement quantique ainsi que pour la facilité avec laquelle on peut modifier leurs propriétés en greffant différents groupements fonctionnels sur la structure de base du fluorène. L'originalité des recherches effectuées au laboratoire concerne la structure des dispositifs électroluminescents (cellules électrochimiques électroluminescentes ou OLEC) que nous réalisons. Leur principe de fonctionnement repose sur l'utilisation de liquides ioniques ajoutés directement au polymère conjugué sans l'intervention d'un polymère conducteur ionique. Le travail réalisé au cours de cette thèse a principalement consisté à tenter d'améliorer les performances du polyfluorène par l'utilisation de groupements fonctionnels permettant d'augmenter la compatibilité polymère / liquide ionique. Dans cette optique, nous avons mis en œuvre l'utilisation d'un outil de caractérisation particulièrement adapté à nos échantillons : la microscopie à force atomique en mode EFM ou KFM. Cela nous a permis de visualiser précisément la séparation de phase entre le polymère et le liquide ionique. Nous avons ainsi pu montrer que le courant dans un dispositif était grossièrement proportionnel à l'interface polymère / liquide ionique. Nous avons alors proposé une hypothèse expliquant le mode de vieillissement des OLEC. L'amélioration du mélange, c'est-à-dire la maximisation de l'interface polymère / liquide ionique devrait ainsi permettre d'améliorer la durée de vie des dispositifs. L'utilisation de groupements PEO et cyano greffés sur le polyfluorène semble une voie à explorer. Enfin, nous avons décrit le comportement particulier du mélange polyfluorène cyano – THA-TFSI dont la morphologie évolue suivant les conditions de température et de pression.

Organic light-emitting devices (OLEDs) have attracted significant attention because of their unique advantages for flat panel display applications. However, the relatively limited electroluminescence (EL) stability of blue emitting OLEDs continues to limit the commercialization of full color OLED displays. In most cases, the decrease in EL efficiency is also accompanied by a loss in blue color purity. Thus, the understanding of the degradation mechanisms of both the EL efficiency loss and color purity loss and the corresponding solutions to device degradation are required. In this thesis, electrical aging mechanism in anthracene-based OLEDs is investigated by using a number of techniques, including delayed EL measurements. The studies reveal that electrical aging is associated with an increasing concentration of an intermolecular species with a weak characteristic luminescence at around 535 nm. This species is capable of trapping charges, and thus plays a role as an electron-hole recombination center with prolonged electrical driving. Weak green luminescence from this species leads to an increased green/blue emission ratio, and causes the color purity loss in aged devices. The results also suggest that this species is also efficient in dissipating excitation energy non-radiatively, hence is capable of quenching singlet excitons in anthracene-based OLEDs, contributing to the observed efficiency loss with electrical aging. Moreover, the photo-stability of the organic/metal cathode interface in OLEDs is studied. Irradiating OLEDs by external illumination is found to result in a gradual increase in driving voltage and decrease in EL efficiency. This photo-induced degradation in device performance is found to be caused by changes at the organic/metal cathode interface that lead to a deterioration in electron injection. Evidence of photodegradation of the same interface, inherently, by device own EL, is also reported. The results uncover an important degradation mechanism in OLEDs and shed the light on a phenomenon that might limit the stability of other organic optoelectronic and photovoltaic devices.

The objective of this thesis is to examine the photophysical and structural properties of Cu(I) complexes of 2-(2’-pyridyl)benzimidazolyl based ligands and Cu(I), Pd(II) and Pt(II) complexes of 2-(2’-pyridyl)indolyl based ligands, for possible use as phosphorescent emitters in OLEDs. The discovery of the atropisomeric 3,3’-bis(2-(2’-pyridyl)indolyl based ligands led to the examination of C-C coupling reactions and the investigation of the new chiral ligands with transition metal ions. Cu(I) complexes of 2-(2’pyridyl)benzimidazolyl-benzene with varying phosphine ligands were prepared. The structures were studied with X-ray crystallography and NMR. Experimental and computational results established that steric and electronic properties of the phosphine ligands influence the photophysical properties of the Cu(I) complexes. Polynuclear Cu(I) complexes with 2-(2’-pyridyl)benzimidazolyl based ligands and two PPh3 ancillary ligands were synthesized, the photoluminescent and electroluminescent properties were examined. A series of 2-(2’-pyridyl)indolyl based ligands; 2-(2’-pyridyl)indolyl-benzene (pib), 1,4-bis[2-(2’-pyridyl)indolyl]benzene (bib) and 1,3,5-tris[2-(2’-pyridyl)indolyl]benzene) (tib) and the corresponding C-C coupled dimers bis[3,3’(2-(2’-pyridyl)indolyl-benzene)] (bpib), bis[3,3’(1,4-bis[2-(2’-pyridyl)indolyl]benzene (bbib) and bis[3,3’(1,3,5-tris[2-(2’-pyridyl)indolyl]benzene)] (btib) were synthesized in a one-pot reaction with the formation of both C-N and C-C bonds. The photophysical properties of these new molecules were investigated. The dimers display intramolecular exciplex formation. The rotation barrier around the C-C bond in the 3 position of the bis-indole was calculated using DFT which support that bpib is an atropisomeric ligand. Cu(I), Pd(II) and Pt(II) complexes were synthesized with pib and bpib. [Cu(pib)(PPh3)2]+ contains a three-coordinate Cu(I) ion and doesn’t display MLCT but rather 3π-1π phosphorescence. In Pd(pib)(acac) and Pt(pib)(DMSO)Cl the pib ligand forms C,N chelated neutral complexes that display red emission in frozen solution and in solid state. The X-ray crystal structure for [Cu(bpib)2]+ revealed a homo-chiral crystal and for Pd(bpib)Cl2 and Pt(bpib)Cl¬2 show a trans-chelating geometry around the metal centre. Frozen solutions of [Cu(bpib)2]+ and Pd(bpib)Cl2 display MCLT phosphorescence. Finally the atropisomeric ligands bpib and bbib were examined as sensors to determine the enantiomeric excess of Zn(2-bromo-3-methylbutyrate)2 by CD spectroscopy. CD and fluorescent titration experiments verified that these ligands have selective interactions with different Zn(II) carboxylates. DFT computations showed that diastereomeric excess caused by chiral discrimination leads to the CD spectral-response of the atropisomeric ligands toward chiral Zn(II) carboxylates. / Thesis (Ph.D, Chemistry) -- Queen's University, 2008-09-25 09:54:21.464

There is presently a strong interest for rigorous methods that perform the electromagnetic analysis of dielectric media with complex dielectric permittivity distribution. The interest is motivated by both present and future applications in the design and manufacturing of optical elements and optoelectronic devices. The level that the microstructuring technologies have now reached calls for fast, memory sparing, and rigorous numerical methods capable of solving and optimizing large structure parts whose characteristics do represent the optical function of the whole structure. Although the majority of modeling problems in microoptics are non-periodic (e.g., a section of an OLED extraction layer, the cell of a microelectronic reticle, a high NA diffractive microlens) they can be efficiently solved by periodizing the index distribution. A new powerful numerical method for the exact modeling of 2D periodic structures is described with all features and expressions needed to implement it. The power of this method is in its unique specific form which permits to apply fast numerical algorithms and, consequently, to decrease dramatically the calculation complexity in comparison with established methods. The comparison with reference solutions has shown that, first, the new method gives the same results as the latter on benchmark structures and, secondly, that the needed calculation time and memory resort represent a breakthrough towards solving larger periodic or periodized structures. The developed method was applied to analyze nonperiodic scattering problem of a plane dielectric layer with spherical micro/nanoparticles. Proposed numerical benchmark demonstrated the possibility to get about 1% accuracy. In addition there was developed a numerical S-matrix based method for planar electroluminescent structures simulation. Validity of the method was demonstrated by comparison with experimental results. Finally both methods for the light scattering calculation and multilayer structures simulation were joined, and a scattering layer was demonstrated to increase an OLED external efficiency by several percent

This work focusses on the development of top-emitting white organic light-emitting diodes (OLEDs), which can be fabricated on metal substrates. Bottom-emitting OLEDs have been studied intensively over the years and show promising perspectives for future commercial applications in general lighting. The development of top-emitting devices has fallen behind despite the opportunities to produce these devices also on low-cost opaque substrates. This is due to the challenges of top-light-emission concerning the achievement of a broad and well-balanced white emission spectrum in presence of a strong microcavity. The following work is a further step towards the detailed understanding and optimization of white top-emitting OLEDs. First, the available metal substrates and the deposited silver electrodes are examined microscopically to determine their surface characteristics and morphology in order to assess their applicability for thin-film organic stacks of OLEDs. The examination shows the suitability for untreated Alanod metal substrates, which display low surface roughness and almost no surface defects. For the deposited silver anodes, investigations via AFM show a strong influence of the deposition rate on the surface roughness. In the main part of the work top-emissive devices with both hybrid and all-phosphorescent architecture are investigated, in which three or four emitter materials are utilized to achieve maximum performance. The feasibility for top-emitting white OLEDs in first and second order devices is investigated via optical simulations, using the example of a three-color hybrid OLED. Here, the concept of a dielectric capping layer on top of the cathode is an essential criterion for broadband and nearly angle independent light emission. The main focus concerning the investigation of fabricated devices is the optimization of the organic stacks to achieve high efficiencies as well as excellent color quality of warm white emission. The optimization of the hybrid layer structure based on three emitter materials using a combined aluminum-silver anode mirror resulted in luminous efficacies up to 13.3 lm/W and 5.3 % external quantum efficiency. Optical analysis by means of simulation revealed a superior position concerning internal quantum efficiency compared to bottom-emitting devices with similar layer structure. The devices show an enhanced emission in forward direction compared to an ideal Lambertian emitter, which is highly preferred for lighting applications. The color quality - especially for devices based on a pure Al anode - is showing excellent color coordinates near the Planckian locus and color rending indices up to 77. The introduction of an additional yellow emitter material improves the luminous efficacy up to values of 16.1 lm/W and external quantum efficiencies of 5.9 %. With the choice of a all-phosphorescent approach, using orange-red, light blue and green emitter materials, luminous efficacies of 21.7 lm/W are realized with external quantum efficiencies of 8.5 %. Thereby, color coordinates of (x, y) = (0.41, 0.45) are achieved. Moreover, the application of different crystalline capping layers and alternative cathode materials aim at a scattering of light that further reduces the angular dependence of emission. Experiments with the crystallizing material BPhen and thin carbon nanotube films (CNT) are performed. Heated BPhen capping layer with a thickness of 250 nm show a lower color shift compared to the NPB reference capping layer. Using CNT films as cathode leads to a broadband white emission at a cavity thickness of 160 nm. However, due to very high driving voltages needed, the device shows low luminous efficacy. Finally, white top-emitting organic LEDs are successfully processed on metal substrates. A comparison of three and four color based hybrid devices reveal similar performance for the devices on glass and metal substrate. Only the devices on metal substrate show slightly higher leakaged currents. During repeated mechanical bending experiments with white devices deposited on 0.3 mm thin flexible Alanod substrates, bending radii up to 1.0 cm can be realized without device failure. / Diese Arbeit richtet ihren Schwerpunkt auf die Entwicklung von top-emittierenden weißen organischen Leuchtdioden (OLEDs), welche auch auf Metallsubstraten gefertigt werden können. Im Laufe der letzten Jahre wurden bottom-emittierende OLEDs sehr intensiv studiert, da sie vielversprechende Perspektiven für zukünftige kommerzielle Anwendungen in der Allgemeinbeleuchtung bieten. Trotz der Möglichkeit, OLEDs auch auf kostengünstigen lichtundurchlässigen Substraten fertigen zu können, blieb die Entwicklung von top-emittierenden Bauteilen dabei allerdings zurück. Dies läßt sich auf die enormen Herausforderungen von top-emittierenden OLEDs zurückführen, ein breites und ausgeglichenes weißes Abstrahlungsspektrum in Gegenwart einer Mikrokavität zu generieren. Die folgende Arbeit liefert einen Beitrag zum detaillierten Verständnis und der Optimierung von weißen top-emittierenden OLEDs. Zunächst werden die verfügbaren Metallsubstrate und abgeschiedenen Silberelektroden auf ihre Oberflächeneigenschaften und Morphologie mikroskopisch untersucht, um damit ihre Verwendbarkeit für organische Dünnfilmstrukturen in OLEDs einzuschätzen. Die Untersuchung zeigt eine Eignung von unbehandelten Alanod Metallsubstraten auf, welche eine niedrige Oberflächenrauigkeit und fast keine Oberflächendefekte besitzen. Bei den abgeschiedenen Silberelektroden zeigen Untersuchungen mit dem Rasterkraftmikroskop eine starke Beeinflussung der Oberflächenrauigkeit durch die Aufdampfrate. Im Hauptteil der Arbeit werden top-emittierende Dioden mit hybrid und voll-phosphoreszenter Architektur untersucht, in welcher drei oder vier Emittermaterialien verwendet werden, um eine optimale Leistungscharakteristik zu erreichen. Die Realisierbarkeit von top-emittierenden weißen OLEDs in Dioden erster und zweiter Ordnung wird durch optische Simulation am Beispiel einer dreifarb-OLED mit Hybridstruktur ermittelt. Dabei ist das Konzept der dielektrischen Deckschicht - aufgebracht auf die Kathode - ein essenzielles Kriterium für breitbandige und annähernd winkelunabhängige Lichtemission. Der Schwerpunkt im Hinblick auf die Untersuchung von hergestellten Dioden liegt in der Optimierung der organischen Schichtstrukturen, um hohe Effizienzen sowie exzellente warmweiße Farbqualität zu erreichen. Im Rahmen der Optimierung von hybriden Schichtstrukturen basierend auf drei Emittermaterialien resultiert die Verwendung eines kombinierten Aluminium-Silber Anodenspiegels in einer Lichtausbeute von 13.3 lm/W und einer externen Quanteneffizienz von 5.3 %.Eine optische Analyse mit Hilfe von Simulationen zeigt eine überlegene Stellung hinsichtlich der internen Quanteneffizient verglichen mit bottom-emittierenden Dioden ähnlicher Schichtstruktur. Die Dioden zeigen eine verstärkte vorwärts gerichtete Emission im Vergleich zu einem idealen Lambertschen Emitter, welche in hohem Maße für Beleuchtungsanwendungen erwünscht ist. Es kann eine ausgezeichnete Farbqualität erreicht werden - insbesondere für Dioden basierend auf einer reinen Aluminiumanode - mit Farbkoordinaten nahe der Planckschen Strahlungskurve und Farbwiedergabeindizes bis zu 77. Die weitere Einführung eines zusätzlichen gelben Emittermaterials verbessert die Lichtausbeute auf Werte von 16.1 lm/W und die externe Quanteneffizient auf 5.9 %. Mit der Wahl eines voll-phosphoreszenten Ansatzes unter der Verwendung eines orange-roten, hellblauen und grünen Emittermaterials werden Lichtausbeuten von 21.7 lm/W und externe Quanteneffizienten von 8.5 % erzielt. Damit werden Farbkoordinaten von (x, y) = (0.41, 0.45) erreicht. Darüberhinaus zielt die Verwendung von verschiedenen kristallinen Deckschichten und alternativen Kathodenmaterialien auf eine Streuung des ausgekoppelten Lichts ab, was die Winkelabhängigkeit der Emission vermindern soll. Experimente mit dem kristallisierenden Material BPhen und dünnen Filmen aus Kohlenstoffnanoröhren werden dabei durchgeführt. Geheizte BPhen Deckschichten mit einer Schichtdicke von 250 nm zeigen eine geringere Farbverschiebung verglichen mit einer NPB Referenzdeckschicht. Die Verwendung von Kohlenstoffnanoröhren als Kathode führt zu einer breitbandigen weißen Emission bei einer Kavitätsschichtdicke von 160 nm. Schließlich werden weiße top-emittierende organische Leuchtdioden erfolgreich auf Metallsubstraten prozessiert. Ein Vergleich von drei- und vierfarb-basierten hybriden Bauteilen zeigt ähnliche Leistungsmerkmale für Dioden auf Glas- und Metallsubstraten. Während wiederholten mechanischen Biegeexperimenten mit weißen Dioden auf 0.3 mm dicken flexiblen Alanodsubstraten können Biegeradien bis zu 1.0 cm ohne Bauteilausfall realisiert werden.

Universiẗat, Habil.-Schr., 2005--Kassel.

abstract: A low temperature amorphous oxide thin film transistor (TFT) backplane technology for flexible organic light emitting diode (OLED) displays has been developed to create 4.1-in. diagonal backplanes. The critical steps in the evolution of the backplane process include the qualification and optimization of the low temperature (200 °C) metal oxide process, the stability of the devices under forward and reverse bias stress, the transfer of the process to flexible plastic substrates, and the fabrication of white organic light emitting diode (OLED) displays. Mixed oxide semiconductor thin film transistors (TFTs) on flexible plastic substrates typically suffer from performance and stability issues related to the maximum processing temperature limitation of the polymer. A novel device architecture based upon a dual active layer enables significant improvements in both the performance and stability. Devices are directly fabricated below 200 ºC on a polyethylene naphthalate (PEN) substrate using mixed metal oxides of either zinc indium oxide (ZIO) or indium gallium zinc oxide (IGZO) as the active semiconductor. The dual active layer architecture allows for adjustment in the saturation mobility and threshold voltage stability without the requirement of high temperature annealing, which is not compatible with flexible colorless plastic substrates like PEN. The device performance and stability is strongly dependent upon the composition of the mixed metal oxide; this dependency provides a simple route to improving the threshold voltage stability and drive performance. By switching from a single to a dual active layer, the saturation mobility increases from 1.2 cm2/V-s to 18.0 cm2/V-s, while the rate of the threshold voltage shift decreases by an order of magnitude. This approach could assist in enabling the production of devices on flexible substrates using amorphous oxide semiconductors. / Dissertation/Thesis / M.S. Chemical Engineering 2011

Ressonância magnética detectada eletricamente (RMDE) de banda-X (9 GHz) e de banda-K (24 GHz) foram usadas para estudar diversos diodos baseados em tris-8(hidroxiquinolinolato) de alumínio III (Alq3). A técnica de RMDE consiste, basicamente, em medir a variação da condutividade quando o sistema entra na condição de ressonância magnética; assim, é possível relacionar propriedades de transporte elétrico com as funções de onda das moléculas envolvidas no processo. Para este estudo foram confeccionados diodos eletroluminescentes e unipolares de multicamadas no Laboratoire d'Optoélectronique des Materiaux Moléculaire (LOMM), da École Polytechnique Fédérale de Lausane (EPFL), Suíça, pelo Dr. Frank Nüesch. Faz parte também deste trabalho a montagem experimental do sistema de RMDE de banda-K, onde a maior parte dos dados foram obtidos. O sinal de RMDE dos diodos unipolares, da ordem de 1E-6, é atribuído ao processo dependente de spin de saltos eletrônicos que ocorre próximo às interfaces. O sinal típico de RMDE dos diodos eletroluminescentes é mais intenso, da ordem de 1E-4, e é atribuído à ressonância de spin-1/2 na formação dos éxcitons. O espectro de RMDE, por meio de ajuste de curvas, pôde ser decomposto em duas gaussianas: uma com largura de linha pico-a-pico DHPP de 1,6 mT, independente do campo elétrico aplicado no dispositivo, e outra variando de 2,0 mT a 3,4 mT. A componente mais estreita se deve à ressonância do radical positivo de Alq3, enquanto que a componente mais larga àquela do negativo. O estudo da forma de linha e de sua dependência com o campo elétrico dos espectros de RMDE de diodos unipolares dão suporte à ambas as atribuições. Neste trabalho, a questão da eficiência quântica e da zona de recombinação também são discutidas. / Electrically Detected Magnetic Resonance (EDMR) at X-band (9GHz) and K-band (24 GHz) were used to investigate Alq3 based diodes. EDMR technique consists basically of measuring conductivity variation at magnetic resonance conditions; thus, it is possible to correlate electrical transport properties with wave functions of the molecules involved in the process. Electroluminescent and unipolar multilayer diodes were prepared in the Laboratoire d'Optoélectronique des Materiaux Moléculaire (LOMM), at on École Polytechnique Fédérale de Lausane EPFL, Switzerland by Dr. Frank Nüesch. The experimental setup of the K-band EDMR system, where most of the data were obtained, was also part of this work. The unipolar diodes EDMR signal is of the order of 1E-6 and is attributed to spin dependent hopping process close to the interfaces. The electroluminescent diodes typical EDMR signal is more intense, of the order of 1E-4 , and is attributed to exciton´s formation spin-1/2 resonance. The EDMR spectrum can be decomposed into two Gaussians: one with peak-to-peak line width (DHPP) of 1.6 mT, independent of the electrical field applied to the devices, and other one whit DHPP of 2.0 mT to 3.4 mT. The narrower component is due to the resonance of positive Alq3 radical, while the larger component is due to the negative. Both attributions are supported by the investigation of line shape and its dependence of electrical field in the unipolar diodes EDMR spectra. In this work, the quantum efficiency and the recombination zone issues are also discussed.