This work deals with the power cycling reliably of power modules and discrete devices. A small part was tested with standard test equipment, but the majority of devices were tested with an advanced test approach with additional switching losses. A large variety of packages under different conditions were tested: Discrete low-voltage silicon MOSFETs (<100 V), discrete SiC MOSFETs, baseplate-free SiC modules, medium power silicon modules and high power silicon modules. The core of the work is the investigation of low temperature swings in the transition between elastic and plastic deformation. During high operation temperatures, no significant increase in lifetime was observed, but at reduced junction temperatures, the impact was significant. All experimental results were transferred into a 3D simulation environment, for further investigation of the temperature and current distribution as well as the mechanical fatigue parameters, to allow a better understanding of the physical processes.

Este trabalho mostra a comparação dos efeitos das falhas provocadas pelos Single-Event Effects em dispositivos 28nm FDSOI, 28nm FDSOI High-K e 32nm Bulk CMOS e células de memória 6T SRAM feitas com estes dispositivos. Para conseguir isso, foram usadas ferramentas TCAD para simular falhas transientes devido a impacto de íons pesados a nível dispositivo e nível circuito. As simulações neste ambiente tem como vantagem a simulação dos fatos e mecanismos que produz as falhas transientes e seus efeitos nos dispositivos, além de também servir para projetar virtualmente estes dispositivos e caraterizar eles para estas simulações. Neste caso, foram projetados três dispositivos para simulação: um transistor NMOS de 32nm Bulk, um transistor NMOS de 28nm FDSOI e um transistor NMOS de 28nm FDSOI High-K para fazer comparações entre eles. Estes dispositivos foram projetados, caraterizados e testados contra o impacto de íons pesados a níveis dispositivo e circuito. Como resultado obtido, transistor Bulk de 32nm teve, no pior caso, uma carga coletada de 7.57 e 7.19 vezes maior que a carga coletada pelo dispositivo FDSOI de 28nm e FDSOI High-K de 28nm respectivamente atingido pelo mesmo íon pesado de 100MeV-cm2/mg. Com estes dados foi possível modelar o comportamento da carga coletada de ambos dispositivos usando este íon pesado, atingindo os terminais de Fonte e Dreno em distintos lugares e ângulos. Usando a mesma ferramenta e os dados obtidos de carga coletada pelos testes anteriores, foram projetadas células de memória SRAM de 6 transistores. Isso foi para testar elas contra os efeitos do impacto de íons pesados nos transistores NMOS de armazenagem da dados. Neste caso, a Transferência Linear de Energia (LET) do íon necessária para fazer que o dado armazenado na SRAM Bulk mude é 12.8 vezes maior que no caso da SRAM FDSOI e 10 maior no caso da SRAM FDSOI High-K, embora a quantidade de carga coletada necessária para que o dado mude em ambas células seja quase a mesma. Com estes dados foi possível modelar os efeitos dos íons pesados em ambos circuitos, descobrir a Carga Crítica destes e qual é o mínimo LET necessário para que o dado armazenado nestas SRAMs mude. / This work shows a comparison of faults due to Single-Event Effects in 28nm Fully Depleted SOI (FDSOI), 28nm FDSOI High-K and 32nm Bulk CMOS devices, and in 6T SRAM memory cells made with these devices. To provide this, was used TCAD tools to simulate transient faults due to heavy ion impacts on device and circuit levels. The simulations in that environment have the advantage to simulate the facts and mechanisms which produce the transient faults and this effects on the electronic devices, it also allow to simulate the virtual device fabrication and to characterize them. In this case, two devices were created for the simulations: a 32nm Bulk NMOS transistor and a 28nm FDSOI NMOS transistor for compare them. These devices were created, characterized and tested against heavy ion impacts at device and circuit levels. The results show that 32nm Bulk transistor has, in the worst case, a collected charge 7.57 and 7.19 times greater than the 28nm FDSOI and 28nm FDSOI High-K respectively collected charge with the same 100MeV-cm2/mg heavy ion. With these data it was possible to model the behavior of the collected charge in both devices with the same heavy-ion, reach the Source and Drain Terminal in different places and angles. Using the same tools and the obtained collected charge data of previous simulations, it was designed 6 transistors SRAM Memory Cells. That is done to test these circuits against the heavy ion effects on the data-storage NMOS transistor. In this case, the necessary Ion Linear Energy Transfer (LET) to flip the Bulk SRAM is 12.8 greater than the FDSOI SRAM and 10 times greater than the FDSOI High- K SRAM case, although the amount of charge to flip the cells is almost the same in both cases. With these data it was possible to model the heavy-ion effects in both circuits, discover the Critical Charge of them and the minimum LET to flips these SRAMs.

Le phénomène de suffusion correspond à la migration des particules fines érodées dans un milieu poreux sous l'action d’un flux hydraulique. Ce mécanisme pourrait être la cause principale des ruptures des remblais et des barrages en terre. De nombreuses études expérimentales ont été menées pour comprendre la suffusion et mettre en évidence les phénomènes couplés associés. Au niveau numérique, on trouve beaucoup de modèles analytiques et numériques mais rares sont ceux qui prennent en compte l’arrachement des particules, leur transport et leur dépôt éventuel (par un processus de colmatage ou pour des vitesses d’écoulement suffisamment faibles).En se basant sur une loi d’écoulement de type Darcy, sur la loi d’érosion de Papamichos et al (2001) modifiée par Bendahmane (2005)et sur une loi d’évolution de la viscosité de fluide (relation d’Einstein), nous développons une nouvelle approche hydromécanique de la suffusion. La résolution numérique du problème est réalisée par la méthode des éléments finis. Deux aspects sont présentés: le cadre général du modèle proposé (réalisé en 2D) avec une étude paramétrique et la validation du modèle avec une modélisation 3D réalisée avec le modèle géométrique de l’essai (Cross Erosion Test) (CET), ce qui permet de décrire à la fois les phénomènes d’érosion, de transport et de dépôt des particules érodées dans un milieu poreux saturé.Pour cela, nous avons choisi un outil de modélisation approprié à la représentation de phénomènes couplés tels que ceux mobilisés par l’érosion interne. Le logiciel Comsol-Multiphysics 3.4b, basé sur la méthode des éléments finis, a été retenu car il permet d’implanter relativement facilement de nouvelles équations constitutives des phénomènes. Dans un deuxième temps, le modèle a été validé sur des expériences de référence reflétant les phénomènes étudiés. Nous avons utilisé les résultats expérimentaux de Nguyen (2013) qui a mis au point un nouveau dispositif expérimental au laboratoire 3SR appelé " l'Essai d’Érosion Transverse " ou Cross Érosion Test. Deux types de sol ont été considérés : un sol gravelo-sableux(noté S3) et un sol limoneux de l’Isère (noté S4 et S4-a).Afin de discuter des aspects transitoire et dynamique du phénomène de suffusion, les vitesses d’écoulement, les gradients hydrauliques, la distribution de la porosité et de la perméabilité, la distribution de la concentration des particules érodées en suspension, et enfin la masse érodée sortantes ont mesurés au cours du temps et comparés aux résultats du modèle physique. / The phenomenon of Suffusion corresponds to the migration of fine eroded particles in a porous medium under the action of an internal water flow. This mechanism could be the main origin of damage in embankments and earth dams. Many experimental studies have been done to analyse the suffusion but actually understanding this phenomenon appears as a major scientific challenge. On the other hand, numerically, only a few studies were found which associate the mechanisms of detachment, transport and deposition of eroded particles.Based on the Darcy’s law model, the erosion model of Papamichos et al (2001) modified by Bendahmane (2005) and the fluid viscosity evolution law (Einstein relation), we developed a new hydro-mechanical approach of suffusion. The numerical solution of the problem is carried out by using a finite element method. Two aspects are presented: first, the general framework of the proposed model (implemented in 2D) with a parametric study and then the validation of the numerical model realized with a 3D study of the geometric model of the experimental study of Cross Erosion Test (CET). This model describes the three phenomena of suffusion: erosion, transport and deposition of eroded particles in a saturated soil.Furthermore, the numerical modeling of coupled phenomena of internal erosion is performed using the commercial software "Comsol Multiphysics-3.4b". However, to validate the model, experimental results on two types of soil: sandy gravel soil (S3) and the silt of Isère (S4 and S4-a) are used. These results are found in the PhD thesis of Nguyen(2013) who has developed a new apparatus called Cross Erosion Test (CET).Moreover, to discuss the transient and dynamic aspects of the phenomenon, the evaluation of the mass conservation with different figures of flow velocity, hydraulic gradient, hydraulic head, porosity and permeability distribution, concentration distribution, and of outgoing eroded particles, are measured over time and compared with experimental results.

Cette thèse porte sur la simulation tridimensionnelle (3D) des décharges couronnes à l'aide du calcul haute performance. Lorsqu'on applique une impulsion de haute tension entre une pointe et un plan, les lignes de champ électrique fortement resserrées autour de la pointe induisent la propagation simultanée de plusieurs streamers et la formation d'une décharge couronne de structure arborescente. Dans ces conditions, seule une simulation électro-hydrodynamique 3D est apte à reproduire cette structure et fournir les ordres de grandeur de l'énergie déposée et de la concentration des espèces créées durant la phase de décharge. Cependant, cette simulation 3D est très consommatrice en temps et mémoire de calcul et n'est désormais accessible que grâce à l'accroissement permanent de la puissance des ordinateurs dédié au calcul haute performance. Dans le cadre d'une simulation électro-hydrodynamique 3D, une attention particulière doit être prise concernant l'efficacité des solveurs à résoudre les équations elliptiques 3D car leur contribution en termes de temps de calcul peut dépasser 80% du temps global de la simulation. Ainsi, une partie de manuscrit est consacrée aux tests de performances de méthodes de résolution d'équations elliptiques directes ou itératives telle que SOR R&B, BiCGSTAB et MUMPS, en utilisant le calcul massivement parallèle et les librairies MPI. Les calculs sont réalisés sur le supercalculateur EOS du réseau CALMIP, avec un nombre de cœurs de calcul allant jusqu'à 1800, et un nombre de mailles atteignant 8003 (soit plus 1/2 Milliard de mailles). Les tests de performances sont réalisés en statique sur le calcul du potentiel géométrique et en dynamique en propageant une densité de charge d'espace analytique caractéristique des streamers. Pour réaliser une simulation complète 3D de la décharge il faut également intégrer au programme un algorithme capable de résoudre les équations de transport de particule chargée à fort gradients de densité caractéristiques aux streamers. Dans ce manuscrit, l'algorithme MUSCL est testé dans différentes conditions de propagation d'un cube de densité (à vitesse homogène ou non homogène spatialement) afin d'optimiser le transport des densités d'espèces chargées impliquées. Le code 3D, conçu pour résoudre le modèle électro- hydrodynamique complet de la décharge (couplant les équations de transport, de Poisson et de cinétique réactionnelle) est ensuite validé par la confrontation des résultats 3D et 2D dans une condition de simulation présentant une symétrie de révolution autour de l'axe de propagation d'un streamer. Enfin, les premiers résultats des simulations 3D de la phase décharge avec la propagation d'un ou plusieurs streamers asymétriques sont présentés et analysés. Ces simulations permettent de suivre la structure arborescente de la décharge lorsqu'on applique une tension pulsée entre une pointe et un plan. L'initiation de la structure arborescente est étudiée en fonction de la position de spots plasmas et de leur influence sur l'amorçage des streamers. / This work is devoted to the three dimensional (3D) simulation of streamer corona discharges in air at atmospheric pressure using high-performance parallel computing. When a pulsed high-voltage is applied between a tip and a plane in air, the strong electric field lines constricted around the tip induce the simultaneous propagation of several streamers leading to a corona discharge with a tree structure. Only a true 3D electro-hydrodynamics simulation is able to reproduce this branching and to provide the orders of magnitude of the local deposited energy and the concentration of the species created during the discharge phase. However, such a 3D simulation which requires large computational memory and huge time calculation is nowadays accessible only when performed with massively parallel computation. In the field of 3D electro-hydrodynamics simulations, a special attention must be paid to the efficiency of solvers in solving 3D elliptic equations because their contribution can exceed 80% of the global computation time. Therefore, a specific chapter is devoted to test the performance of iterative and direct methods (such as SOR R&B, BiCGSTAB and MUMPS) in solving elliptic equations, using the massively parallel computation and the MPI library. The calculations are performed on the supercomputer EOS of the CALMIP network, with a number of computing cores and meshes increasing up to respectively 1800 and 8003 (i.e. more than 1/2 Billion meshes). The performances are compared for the calculation of the geometric potential and in a dynamic simulation conditions consisting in the propagation of an analytical space charge density characteristic of the streamers. To perform a complete 3D simulation of the streamer discharge, must also involve a robust algorithm able to solve the coupled conservation equations of the charged particle density with very sharp gradients characteristic of the streamers. In this manuscript, the MUSCL algorithm is tested under different propagation conditions of a cubic density (with uniform or non-uniform velocity field). The 3D code, designed to solve the complete electro-hydrodynamics model of the discharge (coupling the conservation equations, the Poisson equation and the chemical kinetics) is validated by comparing the 3D and 2D results in a simulation conditions presenting a rotational symmetry around the propagation axis of a mono-filamentary streamer. Finally, the first results of the 3D simulations of the discharge phase with the propagation of one or several asymmetric streamers are presented and analyzed. These simulations allow to follow the tree structure of a corona discharge when a pulsed voltage is applied between a tip and a plane. The ignition of the tree structure is studied as a function of the initial position of the plasma spots.

Denna studie om 3D-avprovning för sport-tights är en kandidatuppsats i designteknik. Företaget studien är utvecklad för jobbar med sportkläder och har i dagsläget ett intresse av att använda sig av 3D-simulering som avprovningsmetod. Vid utveckling av tights anpassade för träning skickas i dagsläget flera prototyper mellan företaget och leverantören innan produkten kan börja produceras. För att framtagningen av produkten ska ta mindre tid, bli mer miljövänlig och kosta mindre undersöker studien om 3D-avprovning är applicerbart i företagets process för produktframtagning. För att kontrollera validiteten i 3D-avprovning av tights gjordes tre undersökningar med syfte att få förståelse för skillnaderna mellan en fysisk och en virtuell avprovning. Undersökningarna fokuserar på grundstorleken Small och den största storleken Extra Large. Studien visar att 3D-simulering till viss del är en fungerande avprovningsmetod för tights när det kommer till att kontroll av designen. För att kontrollera plaggens rörelsevidd är metoden i denna studie ej fungerande. Studiens deltagare visade en positiv inställning till att använda sig av metoden i deras produktframtagningsprocess men då främst som ett komplement till fysiska avprovningar tidigt i designprocessen. / This study on 3D fitting for sports tights is a Final Bachelor Degree Thesis in design technology. The company the study is developed for works with sportswear and currently has an interest in using 3D simulation as a fitting method. For the development of tights adapted for training, several prototypes are currently being sent between the company and the supplier before the product can start to be produced. In order for the production of the product to take less time, become more environmentally friendly and cost less, the study investigate if 3D fitting is applicable in the company's product development process. To check the validity of 3D fitting of tights, three surveys were made with the purpose of understanding the differences between physical and virtual testing. The studies focus on the base size Small and the largest size Extra Large. The study shows that 3D simulation is partially functional testing method for tights when it comes to controlling the design. In order to control the ease, the method in this study is not working. The participants of the study showed a positive attitude to use the method in their product development process, but mainly as a complement to physical fittings early in the design process.

Este trabalho mostra a comparação dos efeitos das falhas provocadas pelos Single-Event Effects em dispositivos 28nm FDSOI, 28nm FDSOI High-K e 32nm Bulk CMOS e células de memória 6T SRAM feitas com estes dispositivos. Para conseguir isso, foram usadas ferramentas TCAD para simular falhas transientes devido a impacto de íons pesados a nível dispositivo e nível circuito. As simulações neste ambiente tem como vantagem a simulação dos fatos e mecanismos que produz as falhas transientes e seus efeitos nos dispositivos, além de também servir para projetar virtualmente estes dispositivos e caraterizar eles para estas simulações. Neste caso, foram projetados três dispositivos para simulação: um transistor NMOS de 32nm Bulk, um transistor NMOS de 28nm FDSOI e um transistor NMOS de 28nm FDSOI High-K para fazer comparações entre eles. Estes dispositivos foram projetados, caraterizados e testados contra o impacto de íons pesados a níveis dispositivo e circuito. Como resultado obtido, transistor Bulk de 32nm teve, no pior caso, uma carga coletada de 7.57 e 7.19 vezes maior que a carga coletada pelo dispositivo FDSOI de 28nm e FDSOI High-K de 28nm respectivamente atingido pelo mesmo íon pesado de 100MeV-cm2/mg. Com estes dados foi possível modelar o comportamento da carga coletada de ambos dispositivos usando este íon pesado, atingindo os terminais de Fonte e Dreno em distintos lugares e ângulos. Usando a mesma ferramenta e os dados obtidos de carga coletada pelos testes anteriores, foram projetadas células de memória SRAM de 6 transistores. Isso foi para testar elas contra os efeitos do impacto de íons pesados nos transistores NMOS de armazenagem da dados. Neste caso, a Transferência Linear de Energia (LET) do íon necessária para fazer que o dado armazenado na SRAM Bulk mude é 12.8 vezes maior que no caso da SRAM FDSOI e 10 maior no caso da SRAM FDSOI High-K, embora a quantidade de carga coletada necessária para que o dado mude em ambas células seja quase a mesma. Com estes dados foi possível modelar os efeitos dos íons pesados em ambos circuitos, descobrir a Carga Crítica destes e qual é o mínimo LET necessário para que o dado armazenado nestas SRAMs mude. / This work shows a comparison of faults due to Single-Event Effects in 28nm Fully Depleted SOI (FDSOI), 28nm FDSOI High-K and 32nm Bulk CMOS devices, and in 6T SRAM memory cells made with these devices. To provide this, was used TCAD tools to simulate transient faults due to heavy ion impacts on device and circuit levels. The simulations in that environment have the advantage to simulate the facts and mechanisms which produce the transient faults and this effects on the electronic devices, it also allow to simulate the virtual device fabrication and to characterize them. In this case, two devices were created for the simulations: a 32nm Bulk NMOS transistor and a 28nm FDSOI NMOS transistor for compare them. These devices were created, characterized and tested against heavy ion impacts at device and circuit levels. The results show that 32nm Bulk transistor has, in the worst case, a collected charge 7.57 and 7.19 times greater than the 28nm FDSOI and 28nm FDSOI High-K respectively collected charge with the same 100MeV-cm2/mg heavy ion. With these data it was possible to model the behavior of the collected charge in both devices with the same heavy-ion, reach the Source and Drain Terminal in different places and angles. Using the same tools and the obtained collected charge data of previous simulations, it was designed 6 transistors SRAM Memory Cells. That is done to test these circuits against the heavy ion effects on the data-storage NMOS transistor. In this case, the necessary Ion Linear Energy Transfer (LET) to flip the Bulk SRAM is 12.8 greater than the FDSOI SRAM and 10 times greater than the FDSOI High- K SRAM case, although the amount of charge to flip the cells is almost the same in both cases. With these data it was possible to model the heavy-ion effects in both circuits, discover the Critical Charge of them and the minimum LET to flips these SRAMs.

Este trabalho mostra a comparação dos efeitos das falhas provocadas pelos Single-Event Effects em dispositivos 28nm FDSOI, 28nm FDSOI High-K e 32nm Bulk CMOS e células de memória 6T SRAM feitas com estes dispositivos. Para conseguir isso, foram usadas ferramentas TCAD para simular falhas transientes devido a impacto de íons pesados a nível dispositivo e nível circuito. As simulações neste ambiente tem como vantagem a simulação dos fatos e mecanismos que produz as falhas transientes e seus efeitos nos dispositivos, além de também servir para projetar virtualmente estes dispositivos e caraterizar eles para estas simulações. Neste caso, foram projetados três dispositivos para simulação: um transistor NMOS de 32nm Bulk, um transistor NMOS de 28nm FDSOI e um transistor NMOS de 28nm FDSOI High-K para fazer comparações entre eles. Estes dispositivos foram projetados, caraterizados e testados contra o impacto de íons pesados a níveis dispositivo e circuito. Como resultado obtido, transistor Bulk de 32nm teve, no pior caso, uma carga coletada de 7.57 e 7.19 vezes maior que a carga coletada pelo dispositivo FDSOI de 28nm e FDSOI High-K de 28nm respectivamente atingido pelo mesmo íon pesado de 100MeV-cm2/mg. Com estes dados foi possível modelar o comportamento da carga coletada de ambos dispositivos usando este íon pesado, atingindo os terminais de Fonte e Dreno em distintos lugares e ângulos. Usando a mesma ferramenta e os dados obtidos de carga coletada pelos testes anteriores, foram projetadas células de memória SRAM de 6 transistores. Isso foi para testar elas contra os efeitos do impacto de íons pesados nos transistores NMOS de armazenagem da dados. Neste caso, a Transferência Linear de Energia (LET) do íon necessária para fazer que o dado armazenado na SRAM Bulk mude é 12.8 vezes maior que no caso da SRAM FDSOI e 10 maior no caso da SRAM FDSOI High-K, embora a quantidade de carga coletada necessária para que o dado mude em ambas células seja quase a mesma. Com estes dados foi possível modelar os efeitos dos íons pesados em ambos circuitos, descobrir a Carga Crítica destes e qual é o mínimo LET necessário para que o dado armazenado nestas SRAMs mude. / This work shows a comparison of faults due to Single-Event Effects in 28nm Fully Depleted SOI (FDSOI), 28nm FDSOI High-K and 32nm Bulk CMOS devices, and in 6T SRAM memory cells made with these devices. To provide this, was used TCAD tools to simulate transient faults due to heavy ion impacts on device and circuit levels. The simulations in that environment have the advantage to simulate the facts and mechanisms which produce the transient faults and this effects on the electronic devices, it also allow to simulate the virtual device fabrication and to characterize them. In this case, two devices were created for the simulations: a 32nm Bulk NMOS transistor and a 28nm FDSOI NMOS transistor for compare them. These devices were created, characterized and tested against heavy ion impacts at device and circuit levels. The results show that 32nm Bulk transistor has, in the worst case, a collected charge 7.57 and 7.19 times greater than the 28nm FDSOI and 28nm FDSOI High-K respectively collected charge with the same 100MeV-cm2/mg heavy ion. With these data it was possible to model the behavior of the collected charge in both devices with the same heavy-ion, reach the Source and Drain Terminal in different places and angles. Using the same tools and the obtained collected charge data of previous simulations, it was designed 6 transistors SRAM Memory Cells. That is done to test these circuits against the heavy ion effects on the data-storage NMOS transistor. In this case, the necessary Ion Linear Energy Transfer (LET) to flip the Bulk SRAM is 12.8 greater than the FDSOI SRAM and 10 times greater than the FDSOI High- K SRAM case, although the amount of charge to flip the cells is almost the same in both cases. With these data it was possible to model the heavy-ion effects in both circuits, discover the Critical Charge of them and the minimum LET to flips these SRAMs.

Denna studie skrivs i ett intresse av ett företag som arbetar med 3D-simulering vid prototypframtagning av provplagg. Syfte med studien är att undersöka korrespondensen mellan virtuell- och fysisk avprovning gällande storlek, passform och val av tyg. I studien undersöks 3D-simuleringsprogrammet CLO 3D och digitalisering av tygprov med applikationen CLO Fabric kit, som komplement i syfte att utvärdera skillnaden mellan virtuell- och fysisk avprovning. Två plagg, bestående av t-tröja i bomullstrikå och skjorta i linneväv, provas av i storlekar: XS, M och XL på tre provpersoner och tre avatarer med motsvarande mått. Ett protokollmed foton från båda avprovningarna bedöms med frågor gällande plaggets visuella skillnad och passform. Resultatet visade att T-tröjan i bomullstrikå gav likvärdigt passform mellan virtuell- och fysisk avprovning i samtliga storlekar. Vid avprovning av skjortan i linneväv var passformsskillnaden mellan virtuell- och fysisk avprovning på storlek XL tydlig. Övriga storlekar hade däremot ett likartat resultat.3D-simulering är en effektiv avprovningsmetod, då man kan modifiera avaterns mått, digitalisera in tygprover och prova av flera storlekar vid virtuell avprovning. Däremot behöver man vara medveten att flera faktorer kan påverka passformen vid virtuell avprovning som till exempel avatarens kroppshållning och tygets mekaniska egenskaper vid digitalisering. / This study writes in an interest of a company that works with 3D-simulation in prototyping sample garments. The purpose of the study is to investigate the correspondence between the virtual and physical try-on regarding size, fit and fabric choice. The study examines the 3D-simulation program CLO 3D and digitization of fabric samples with the CLO Fabric kit application as a complement to evaluate the difference between virtual and physical try-on. Two garment, consisting of t-shirt made of knitted cotton and a shirt made of linen, are fitted in size XS, M and XL on three test persons and three avatars with corresponding measurements. A protocol containing photos from both virtual and physical try-on where evaluated with questions regarding the balance and fit of the garment. It showed that the T-shirt made of knitted cotton gave equivalent results between virtual and physical try-on in all sizes. When comparing the shirt in linen, the fit differed in size XL during virtual and physical try-on. However, Size XS and M had a similar result during virtual and physical try-on. Using 3D-simulation is an advantage when you can modify the avatar's dimensions, digitize fabric samples and try multiple sizes during virtual try-on. However, one needs to be aware that several factors can affect the fit during virtual try-on, such as the avatar posture and the mechanical properties of the fabric during digitization.

[pt] Esta pesquisa interdisciplinar aborda os avanços tecnológicos obtidos no desenvolvimento da técnica de conversão de exames de imagens médicas em modelos virtuais e físicos, na área de medicina fetal. A técnica tem por objetivo melhorar a visualização e contribuir com as tomadas de decisão clínica através do desenvolvimento de modelos tridimensionais que simulam com acurácia as formas anatômicas do paciente. Ao longo de dez anos, diversos avanços foram criados e incorporados, ampliando significativamente as formas de visualização e interatividade. A relação interdisciplinar entre o design e a medicina, possibilitou a constante atualização da técnica, atestado pela vasta produção cientifica nacional e internacional produzida. Um procedimento complexo na área de neurologia foi escolhido como estudo de caso de forma a exemplificar a gama de modelos e simulações que permitiram observar como o design contribui em todo o processo. / [en] This interdisciplinary research approaches the technological advances obtained in the development of the technique of converting medical image images into virtual and physical models, in the area of fetal medicine. The technique aims to improve visuality and contribute to clinical decision making through the development of threedimensional models that accurately simulate the patient s anatomical shapes. Over ten years, several advances were created and incorporated, significantly expanding the ways of visualization and interactivity. The interdisciplinary relationship between design and medicine enabled the constant updating of the technique, attested by the vast national and international scientific production. A complex procedure in the field of neurology was chosen as a case study in order to exemplify the range of models and simulations that allowed us to observe how design contributes to the entire process.

[pt] No campo em crescimento da robótica subaquática, Veículos Subaquáticos Automatizados (AUVs) estão se tornando cada vez mais importantes para uma variedade de usos, como exploração, mapeamento e inspeção. Esta dissertação foca em estudar os principais desafios da acoplagem automática de AUVs, considerando um ambiente 3D simulado personalizado. A pesquisa divide essa tarefa em duas partes principais: estimativa da pose da garagem e estratégia de controle do AUV. Utilizando uma mistura de métodos tradicionais e novos, incluindo sistemas baseados em marcos fiduciais, Redes Neurais Convolucionais (CNN) e Aprendizado por Reforço (RL), o estudo realiza experimentos para verificar o desempenho e as limitações do sistema. Um aspecto significativo desta dissertação é o uso de um ambiente 3D simulado para facilitar o desenvolvimento e o teste de algoritmos de acoplagem automática para AUVs. Este ambiente simula dinâmicas subaquáticas, sensores robóticos e atuadores, permitindo experimentar diferentes técnicas de estimativa de pose e estratégias de controle. Além disso, o estabelecimento de um ambiente 3D simulado amigável para RL representa uma contribuição relevante, oferecendo uma plataforma reutilizável que não apenas valida os algoritmos de acoplagem automática desenvolvidos neste estudo, mas também serve como base para futuras aplicações subaquáticas baseadas em RL. Em resumo, a dissertação explora uma série de cenários para avaliar a eficácia de várias técnicas de acoplagem automática. Inicialmente, ela utiliza servo-visualização junto com um controlador PID tradicional, seguido pela introdução de métodos mais avançados, como estimadores de pose baseados em CNN e controladores de Aprendizado por Reforço. Esses métodos são avaliados tanto individualmente quanto em combinações híbridas para medir sua adequação e limitações para entender os principais desafios por trás da acoplagem automática de AUVs. / [en] In the growing field of underwater robotics, Automated Underwater Vehicles (AUVs) are becoming more important for a range of uses, such as exploration, mapping, and inspection. This dissertation focuses on studying the main challenges of AUV auto-docking, considering a customized 3D simulated environment. The research breaks down this challenging task into two main parts: cage pose estimation and AUV control strategy. Using a mix of traditional and new methods, including fiducial-based systems, Convolutional Neural Networks (CNN), and Reinforcement Learning (RL), the study carries out experiments to check system performance and limitations. A significant aspect of this dissertation is using a 3D simulated environment to facilitate the development and testing of auto-docking algorithms for AUVs. This environment simulates crucial underwater dynamics, robotic sensors, and actuators, allowing for experimenting with different pose estimation techniques and control strategies. Additionally, the establishment of an RL-friendly 3D simulated environment stands as a relevant contribution, offering a reusable platform that not only validates the auto-docking algorithms developed in this study but also serves as a foundation for future RL-based underwater applications. In summary, the dissertation explores a range of scenarios to evaluate the efficacy of various auto-docking techniques. It initially utilizes visual servoing along with a traditional PID controller, followed by the introduction of more advanced methods like CNN-based pose estimators and Reinforcement Learning controllers. These methods are assessed both individually and in hybrid combinations to gauge their suitability and limitations for understanding the main challenges behind the AUV auto-docking.