To date, the search efforts have shifted from the toxic II-VI, III-V and IV-VI semiconductors to more environmentally friendly materials. Among Group II-V semiconductors, Zn3P2 has shown to be a more benign option, similar to Group IV (Ge, Si) materials, for future applications in photovoltaics and optoelectronics. This work is dedicated to the development of wet-chemical synthetic routes of (1) Zn3P2 and (2) Group IV (Ge, Si, Si1-xGex) nanocrystals with precise control over composition, crystal structure, size and dispersity by adjusting different reaction parameters such as temperature, time and solvent composition. Different characterizations will also be employed to probe the size- and composition-dependent physical and optical properties of resulting products. The first part of this work illustrates the synthesis of luminescent Zn3P2 nanocrystals, an earth-abundant and a direct-gap semiconductor possessing high absorption coefficient and long carrier diffusion length, which uphold promising potential in many optoelectronic applications. A hot injection method by using highly reactive P and Zn precursors (P[Si(CH3)3]3 and diethyl zinc) in hexadecylamine and octadecene was developed to prepare a series of alkyl-amine-passivated tetragonal Zn3P2 crystallites with varying size sizes. Substantial blue shifts in the absorption onsets (2.11−2.73 eV) in comparison to the bulk counterpart (1.4−1.5 eV) and a clear red shift with increasing particle size indicates the quantum confinement effects. This is also consistent with the photoluminescent studies with the size-tunable maxima in the visible region (469−545 nm) as a function of growth temperature and time. The phase purity and alkyl-amine passivation of the nanocrystals were determined by structural and surface analysis, confirming the presence of N–Zn and N–P bonds on the tetragonal Zn3P2 crystallites. The second part of this works focuses on the development of a colloidal synthetic strategy of alkyl-amine capped Si1-xGex nanocrystals with control over size- and composition-dependent optical properties. Despite their high miscibility at all compositions, developing a wet-chemical synthesis of Si1-xGex alloys in the nanoscale remains a challenging task, owing to the difference of their crystallization temperatures and the high surface oxidation of Si. Thus an adapted colloidal method is utilized to fabricate single-element Ge and Si nanocrystals. Powder X-ray diffraction indicates successful production of cubic crystalline Ge and amorphous Si nanoparticles individually in oleylamine/octadecene (surfactant/solvent) mixture at 300°C. Absorption onset values of 1.28 eV and 3.11 eV are obtained for resulting Ge and Si colloids, respectively. By alloying these two materials in their nano-regime, tunable optical properties can be achieved throughout the visible to the near IR region by simply varying their elemental compositions. The success of this bandgap engineering process offers more options for new material design by taking advantage of unique properties from each component material.

A mesure que les demandes dans le domaine de l'électronique de puissance tendent vers des conditions de plus en plus extrêmes (forte densité de puissance, haute fréquence, haute température,…), l'évolution des systèmes de traitement de l'énergie électrique se heurte aux limites physiques du silicium. Une nouvelle approche basée sur l'utilisation des matériaux semi-conducteurs grand gap permettra de lever ces limites. Parmi ces matériaux, le diamant possède les propriétés les plus intéressantes pour l'électronique de puissance: champ de rupture et conductivité thermique exceptionnels, grandes mobilités des porteurs électriques, possibilité de fonctionnement à haute température… Les récents progrès dans la synthèse du diamant par des méthodes de dépôt en phase vapeur (CVD) permettent d'obtenir des substrats de caractéristiques cristallographiques compatibles avec l'exploitation de ces propriétés en électronique de puissance. Cependant, l'utilisation du diamant en tant que matériau électronique reste toutefois délicate à ce jour du fait de la grande difficulté de trouver des dopants convenables (en particulier les donneurs) dans le diamant. En outre, certaines propriétés du diamant telles que sa dureté extrême et son inertie chimique, faisant de lui un matériau unique, posent aussi des difficultés dans son utilisation technologique. L'objectif de ces travaux de thèse a été dans un premier temps d'évaluer les bénéfices que pourrait apporter le diamant en électronique de puissance ainsi que l'état de l'art de sa synthèse par dépôt en phase vapeur. Ensuite, différentes étapes technologiques nécessaires à la fabrication de composants sur diamant ont été étudiées: Gravure RIE, dépôt de contacts électriques. Enfin, ces travaux ont été illustrés par la réalisation et la caractérisation de diodes Schottky, dispositifs élémentaires de l'électronique de puissance. Les résultats obtenus permettent d'établir un bilan des verrous scientifiques et technologiques qu'il reste à relever pour une exploitation industrielle de la filière diamant. / As applications in the field of power electronics tend toward more extreme conditions (high power density, high frequency, high temperature ...), evolution of electric power treatment systems comes up against physical limits of silicon, the main semiconductor material used in electronic industry for over 50 years. A new approach based on the use of wide bandgap semiconductor materials will permit to overcome those limits. Among these materials, diamond is a very attractive material for power electronics switch devices due to its exceptional properties: high electric breakdown field, high carriers mobilities, exceptional thermal conductivity, high temperature operating possibility... However, the use of diamond as an electronic material is still very problematic due to the difficulty in the synthesis of high electronic grade CVD diamond and to find suitable dopants (in particular donors) in diamond. Besides, some of the unique properties of diamond, such as its extreme hardness and chemical inertness that make it an attractive material also cause difficulties in its application. Nevertheless, recent progress in the field of chemical vapor deposition (CVD) synthesis of diamond allow the study of the technological steps (RIE etching, ohmic and Schottky contacts, passivation,...) necessary for future diamond power devices processing. This is the aim of this thesis. In a first section, the uniqueness of diamond, the promise it bears as a potential material for specific electronic devices and the difficulties related to its application were reviewed. Then, the different technological steps required for power switching devices processing were studied: RIE etching, Ohmic and Schottky contacts. Finally, these works were illustrated by carrying out and electrical characterizations of Schottky Barrier Diodes. The achieved results allow us to make a summary of scientific and technological locks that remain for an industrial exploitation of diamond in power electronic switch devices field.

Afin d'étudier le fonctionnement des organes, les chercheurs utilisent l'imagerie médicale pour faire des observations d'une façon non invasive. Parmi les techniques d'imagerie les plus utilisées, on cite la tomographie d'émission par positrons (TEP) qui permet d'obtenir des informations fonctionnelles et métaboliques et la tomodensitométrie (TDM) qui fournit des informations sur l'anatomie. Le LabPET II est un scanner bimodal combinant les techniques TEP et TDM. Il est développé par le Centre d'Imagerie Moléculaire de Sherbrooke (CIMS) et le Groupe de Recherche en Appareillage Médical de Sherbrooke (GRAMS), et dispose de plusieurs fonctionnalités innovantes qui le rendent unique dans sa résolution spatiale et sa qualité d'image. Il est également le premier scanner à intégrer totalement les modes TEP et TDM sur les mêmes détecteurs et dans un même système électronique. Ceci se fait grâce à un module détecteur composé d'une matrice de 64 cristaux scintillateurs couplés à 64 photodiodes à avalanche. L'acquisition des signaux se fait par un circuit intégré dédié composé de 64 canaux d'acquisition analogiques et d'un processeur numérique pour le traitement des données. Les travaux de ce projet ont pour but de réviser le circuit intégré à application spécifique (ASIC) incluant la chaîne d'acquisition et de stabiliser son fonctionnement, afin d'améliorer les performances du scanner dans les deux modes TEP et TDM. Ceci a été effectué à travers la conception de nouveaux circuits analogiques et la modification des circuits actuels. Des interventions ont été faites sur différents composants de l'ASIC. Au niveau du canal analogique, des modifications ont été apportées sur les sous-circuits, d'une part pour améliorer le taux de réjection de l'alimentation et ainsi baisser le niveau de bruit, et d'autre part pour augmenter les marges de stabilité et éliminer le risque d'oscillation à gain élevé. Au niveau des circuits auxiliaires de l'ASIC, le circuit de transmission différetielle basse-tension (LVDS) a été révisé pour corriger des défaillances constatées sur les versions précédentes et de nouvelles références de tension ont été conçues pour remplacer les sources précédentes qui souffraient d'instabilités face aux variations de la température et des paramètres du processus de fabrication. Ces travaux ont d'abord été validés par une série de simulations, puis un premier circuit intégré comportant une partie des modifications a été fabriqué avec la technologie CMOS 0,18 µm de la Taiwan Semiconductor Manufacturing Company (TSMC). Ceci a permis de valider un premier lot de révisions et de faire des tests poussés avant de procéder à la mise à jour finale de l'ASIC. Une fois fonctionnel, ce circuit pourra fonctionner d'une façon stable dans les deux modes d'imagerie TEP et TDM et permettra ainsi de réaliser un premier prototype d'un scanner bimodal totalement intégré.

abstract: Wide bandgap (WBG) semiconductors GaN (3.4 eV), Ga2O3 (4.8 eV) and AlN (6.2 eV), have gained considerable interests for energy-efficient optoelectronic and electronic applications in solid-state lighting, photovoltaics, power conversion, and so on. They can offer unique device performance compared with traditional semiconductors such as Si. Efficient GaN based light-emitting diodes (LEDs) have increasingly displaced incandescent and fluorescent bulbs as the new major light sources for lighting and display. In addition, due to their large bandgap and high critical electrical field, WBG semiconductors are also ideal candidates for efficient power conversion. In this dissertation, two types of devices are demonstrated: optoelectronic and electronic devices. Commercial polar c-plane LEDs suffer from reduced efficiency with increasing current densities, knowns as “efficiency droop”, while nonpolar/semipolar LEDs exhibit a very low efficiency droop. A modified ABC model with weak phase space filling effects is proposed to explain the low droop performance, providing insights for designing droop-free LEDs. The other emerging optoelectronics is nonpolar/semipolar III-nitride intersubband transition (ISBT) based photodetectors in terahertz and far infrared regime due to the large optical phonon energy and band offset, and the potential of room-temperature operation. ISBT properties are systematically studied for devices with different structures parameters. In terms of electronic devices, vertical GaN p-n diodes and Schottky barrier diodes (SBDs) with high breakdown voltages are homoepitaxially grown on GaN bulk substrates with much reduced defect densities and improved device performance. The advantages of the vertical structure over the lateral structure are multifold: smaller chip area, larger current, less sensitivity to surface states, better scalability, and smaller current dispersion. Three methods are proposed to boost the device performances: thick buffer layer design, hydrogen-plasma based edge termination technique, and multiple drift layer design. In addition, newly emerged Ga2O3 and AlN power electronics may outperform GaN devices. Because of the highly anisotropic crystal structure of Ga2O3, anisotropic electrical properties have been observed in Ga2O3 electronics. The first 1-kV-class AlN SBDs are demonstrated on cost-effective sapphire substrates. Several future topics are also proposed including selective-area doping in GaN power devices, vertical AlN power devices, and (Al,Ga,In)2O3 materials and devices. / Dissertation/Thesis / Doctoral Dissertation Electrical Engineering 2019

Les capteurs d'images CMOS sont de plus en plus utilisés dans le domaine industriel : la surveillance, la défense, le médical, etc. Dans ces domaines, les capteurs d'images CMOS sont exposés potentiellement à de grandes variations de température. Les capteurs d'images CMOS, comme tous les circuits analogiques, sont très sensibles aux variations de température, ce qui limite leurs applications. Jusqu'à présent, aucune solution intégrée pour contrer ce problème n'a été proposée. Afin de remédier à ce défaut, nous étudions, dans cette thèse, les effets de la température sur les deux types d'imageurs les plus connus. Plusieurs structures de compensation sont proposées. Elles reprennent globalement les trois méthodes existantes et jamais appliquées aux capteurs d'images. La première méthode utilise une entrée au niveau du pixel qui sera modulée en fonction de l'évolution de la température. La deuxième méthode utilise la technique ZTC (Zero Temperature Coefficient). La troisième méthode est inspirée de la méthode de la tension de référence bandgap. Dans tous les cas, nous réduisons de manière très intéressante l'effet de la température et nous obtenons une bonne stabilité en température de -30 à 125°C. Toutes les solutions proposées préservent le fonctionnement initial de l'imageur. Elles n'impactent également pas ou peu la surface du pixel.

The work presented in this thesis concerns surface energy modification and patterning of the surfaces of conjugated polymers. Goniometry and Wilhelmy Balance techniques were used to evaluate the surface energy or wettability of a polymer’s surface; infrared reflectionabsorption spectroscopy (IRAS) was used to analyse the residuals on the surface as modified by a bare elastomeric stamp poly(dimethylsiloxane) (PDMS). The stamp was found to be capable of modifying a polymer surface. Patterning of a single and/or double layer of conjugated polymers on the surface can be achieved by surface energy controlled dewetting. Modification of a conjugated polymer film can also be carried out when a sample is subjected to electrochemical doping in an aqueous electrolyte. The dynamic surface energy changes during the process were monitored in-situ using the Wilhelmy balance method. This thesis also concerns studies of conjugated polymer-based optoelectronics, including light-emitting diodes (PLEDs), that generate light by injecting charge into the active polymer layer, and solar cells (PSCs), that create electrical power by absorbing and then converting solar photons into electron/hole pairs. A phosphorescent metal complex was doped into polythiophene to fabricate PLEDs. The energy transfer from the host polymer to the guest phosphorescent metal (iridium and platinum) complex was studied using photoluminescence and electroluminescence measurements performed at room temperature and at liquid nitrogen temperature. PSCs were prepared using low-bandgap polyfluorene copolymers as an electron donor blended with several fullerene derivatives acting as electron acceptors. Energetic match is the main issue affecting efficient charge transfer at the interface between the polymers and the fullerene derivatives, and therefore the performance of the PSCs. Photoluminescence, luminescence quenching and the lowest unoccupied molecular orbital (LUMO) together with the highest occupied molecular orbital (HOMO) of the active materials in the devices were studied. A newly synthesized fullerene, that could match the low-bandgap polymers, was selected and used as electron acceptor in the PSCs. Photovoltaic properties of these PSCs were characterised, demonstrating one of the most efficient polymer:fullerene SCs that generate photocurrent at 1 μm. / On the day of the defence the status of article number III was Manuscript and article VII was Accepted.

With the trends of fast edge rates, high clock frequencies, and low voltage levels for the high-speed digital computer systems, the ground bounce noise (GBN) or simultaneously switching noise (SSN) on the power/ground planes is becoming one of the major challenges for designing the high-speed circuits. In order to analyze the impact of the GBN on signal integrity (SI) and electromagnetic interference (EMI), an accurate and efficient modeling approach that considers the active devices and passive interconnects is required. This thesis focuses on two points. One is developing modeling approaches for analyzing the GBN effects, and the other is proposing solutions to reduce it. First, based on the FDTD algorithm several efficient modeling approaches including equivalent current-source method (ECSM), Kirchoff surface integral representation (KSIR), and slot-corrected 2D-FDTD are developed. After that, a power/ground-planes design for efficiently eliminating the GBN in high-speed digital circuits is proposed by using low-period coplanar electromagnetic bandgap (LPC-EBG) structure. Its extinctive behaviors of low radiation and broadband suppression of the GBN is demonstrated numerically and experimentally. Good agreements are seen.

This thesis focuses on the modeling and solutions of the simultaneous switching noise (SSN) problems in the power delivery networks (PDN) of high-speed digital circuit packages. An efficient numerical approach based on two-dimension (2D) finite-difference time-domain (FDTD) method combined with the lumped circuit model of the interconnection is proposed to model the PDN of a package and PCB. Based on this approach, the mechanism of noise coupling between package and PCB can be analyzed. In addition, a novel photonic crystal power layer (PCPL) design for the PDN of the package or PCB is proposed to suppress the SSN. The periodic High-Dk material is embedded into the substrate layer between the power and ground planes. Both modeling and measurement demonstrate the PCPL can form a wide stopband well with excellent suppression of the SSN propagation in the substrate and the corresponding electromagnetic interference (EMI).

In the first part of the thesis, the 2-D structures in stratified media are analyzed using an efficient MoM technique. The method is used to optimize transmitted or reflected electric fields from the 2-D structures. The genetic algorithm is used in the optimization process. In the second part a 3-D MoM technique is implemented to analyze multilayered structures with periodically implanted material blocks. Using the method, the dispersion and reflection characteristics of the structure are calculated for different configurations. The results are compared with the results found in the literature and it is seen that they are in good agreement. Asymptotic Waveform Evaluation (AWE) technique is utilized to obtain the Pade approximation of the solution in terms of frequency. The high order derivatives that are required by the AWE technique are calculated through Automatic Differentiation technique. Using the AWE method, the dispersion diagram and reflection characteristics of the periodic structures are obtained in a shorter time. The results are compared with the ones obtained through direct calculation and it is seen that they are in perfect agreement. The reflection coefficients that are obtained from the 3-D MoM procedure are used to calculate Green&rsquo / s functions that approximate electric field of an infinitesimal dipole on the periodically implanted substrate. Using the calculated Green&rsquo / s functions and the spectral domain MoM procedure, dispersion characteristics of a microstrip line on the periodically implanted substrate are obtained.

Esta tese de doutorado trata de dois desafios que projetistas de circuitos integrados analógicos enfrentam quando estimando a confiabilidade de transistores fabricados em modernos processos CMOS: radiação e ruído flicker. Em relação a radiação, o foco desde trabalho é a Dose Total Ionizante (TID): acumulação de dose ionizante (elétrons e prótons) durante um longo período de tempo nas camadas isolantes dos dispositivos, então resultando na degradação dos parâmetros elétricos (por exemplo, a tensão de limiar e as correntes de fuga). Este trabalho apresenta um caso de estudo composto por circuitos referência tensões de baseados na tensão de bandgap e na tensão de limiar dos transistores. Esses circuitos foram fabricados em uma tecnologia comercial CMOS de 130 nm. Um chip contendo os circuitos foi irradiado usando raio gama de uma fonte de cobalto (60 Co), e o impacto dos efeitos da radiação até uma dose de 490 krad nas tensões de saída é apresentado. Foi verificado que o impacto da radiação foi similar ou até mesmo mais severo que os efeitos causados pelo processo de fabricação para a maior parte dos circuitos projetados. Para as referências baseadas na tensão de bandgap implementadas com transistores de óxido fino e grosso, a variação na tensão de saída causada pela radiação foi de 5.5% e 15%, respectivamente. Para as referências baseadas na tensão de limiar, a variação da tensão de saída foi de 2% a 15% dependendo da topologia do circuito. Em relação ao ruído, o foco desta tese é no ruído flicker do transitor MOS quando este está em operação ciclo-estacionária. Nesta condição, a tensão no terminal da porta está constantemente variando durante a operação e o ruído flicker se torna uma função da tensão porta-fonte e não é precisamente estimado pelos tradicionais modelos de ruído flicker dos transistores MOS. Esta tese apresenta um caso de estudo composto por osciladores de tensão (topologia baseada em anel e no tanque LC) projetados em processos 45 e 130 nm. A frequência de oscilação e sua dependência em relação à polarização do substrato dos transistores foi investigada. Considerando o oscilador em anel, a média da variação da frequência de oscilação causada pela variação da tensão de alimentação e da polarização do substrato foi 495 kHz/mV e 81 kHz/mV, respectivamente. A média da frequência de oscilação é de 103,4 MHz e a média do jitter medido para 4 amostras é de 7.6 ps. Para o tanque LC, a frequência de oscilação medida é de 2,419 GHz e sua variação considerando 1 V de variação na tensão de substrato foi de aproximadamente 0,4 %. / This thesis is focused on two challenges faced by analog integrated circuit designers when predicting the reliability of transistors implemented in modern CMOS processes: radiation and noise. Regarding radiation, the concern of this work is the Total Ionizing Dose (TID): accumulation of ionizing dose deposited (electrons and protons) over a long time in insulators leading to degradation of electrical parameters of transistors (e.g. threshold voltage and leakage). This work presents a case-study composed by bandgap-based and threshold voltagebased voltage reference circuits implemented in a commercial 130 nm CMOS process. A chip containing the designed circuits was irradiated through γ-ray Cobalt source (60 Co) and the impact of TID effects up to 490 krad on the output voltages is presented. It was found that the impact of radiation on the output voltage accuracy was similar or more severe than the variation caused by the process variability for most of the case-study circuits. For the bandgap-based reference implemented using thin-oxide and thick-oxide transistors, TID effects result in a variation of the output voltage of 5.5 % and 12%, respectively. For the threshold voltage references, the output variation was between 2% and 15% depending on the circuit topology. Regarding noise, the concern of this work is the transistor flicker noise under cyclostationary operation, that is, when the voltage at transistor gate terminal is constantly varying over time. Under these conditions, the flicker noise becomes a function of VGS; and its is not accurately predicted by traditional transistor flicker noise models. This thesis presents a case-study composed by voltage oscillators (inverter-based ring and LC-tank topologies) implemented in 45 and 130 nm CMOS processes. The oscillation frequency and its dependency on the bulk bias were investigated. Considering the ring-oscillator, the average oscillation frequency variation caused by supply voltage and bulk bias variation are 495 kHz/mV and 81 kHz/mV, respectively. The average oscillation frequency is 103.4 MHz for a supply voltage of 700 mV, and the measured averaged period jitter for 4 measured samples is 7.6 ps. For the LC-tank, the measured oscillation frequency was 2.419 GHz and the total frequency variation considering 1 V of bulk bias voltage was only ~ 0.4 %.