Afin de dépasser la limite d'échelle, il existe une solution innovante qui permet de fabriquer des structures multi-grilles. Ainsi, un NMOSFET composé de trois grilles indépendantes fabriquées dans la technologie CMOS. En dehors de leur forme, géométrique, le transistor multi-grille est similaire à une structure classique. Une multi-grille NMOSFET peut être fabriquée par l'intégration de tranchées de polysilicium. Ces tranchées sont utilisées dans diverses applications telles que les mémoires DRAM, électronique de puissance ou de capteurs d'image. Les capteurs d'image présentent le problème des charges parasites entre les pixels, appelées diaphonie. Les tranchées sont l'une des solutions qui réduisent ce phénomène. Ces tranchées assurent l'isolation électrique sur toute la matrice des pixels. Nous avons étudié ses caractéristiques en utilisant des mesures I-V, méthode du split C-V et de pompage de charge à deux et à trois niveaux. Son multi-seuil caractéristique a été vérifié. Nous n'avons observé aucune dégradation significative de ces caractéristiques grâce à l'intégration des tranchées. La structure a été simulée par la méthode des éléments finis en 3D via le logiciel TCAD. Ses caractéristiques électriques ont été simulées et confrontées avec les résultats obtenus à partir de mesures électriques. La tension de seuil et la longueur de canal effective ont été extraites. Sa mobilité effective et les pièges de l'interface Si/SiO2 ont également été simulés ou calculés. En raison des performances électriques satisfaisantes et d'un bon rendement, nous avons remarqué que ce dispositif est une solution adéquate pour les applications analogiques grâce aux niveaux de tension multi-seuil / One of the recent solutions to overcome the scaling limit issue are multi-gate structures. One cost-effective approach is a three-independent-gate NMOSFET fabricated in a standard bulk CMOS process. Apart from their shape, which takes advantage of the three-dimensional space, multi gate transistors are similar to the conventional one. A multi-gate NMOSFET in bulk CMOS process can be fabricated by integration of polysilicon-filled trenches. This trenches are variety of the applications for instance in DRAM memories, power electronics and in image sensors. The image sensors suffer from the parasitic charges between the pixels, called crosstalk. The polysilicon - filled trenches are one of the solution to reduce this phenomenon. These trenches ensure the electrical insulation on the whole matrix pixels. We have investigated its characteristics using l-V measurements, C-V split method and both two- and three-level charge pumping techniques. Tts tunable-threshold and multi-threshold features were verified. Tts surface- channel low-field electron mobility and the Si/SiO2 interface traps were also evaluated. We observed no significant degradation of these characteristics due to integration of polysilicon-filled trenches in the CMOS process. The structure has been simulated by using 3D TCAD tool. Tts electrical characteristics has been evaluated and compared with results obtained from electrical measurements. The threshold voltage and the effective channel length were extracted. Tts surface-channel low-field electron mobility and the Si/SiO2 interface traps were also evaluated. Owing to the good electrical performances and cost-effective production, we noticed that this device is a good aspirant for analog applications thanks to the multi-threshold voltages

Le travail de thèse effectué porte sur la caractérisation électrique et la modélisation du gaz d’électrons à deux dimensions (2D) dans les dispositifs MOS-HEMT à base de l’hétérojonction AlGaN/AlN/GaN. Ces dispositifs ont un fort potentiel pour les applications d'électronique de puissance. Ce travail de recherche se place en soutien aux efforts de recherche pour l’élaboration des épitaxies GaN sur Si et pour les filières technologiques HEMT sur GaN. Il s'agit de comprendre précisément le fonctionnement du gaz d'électrons 2D et ses propriétés de transport électronique. Une nouvelle méthodologie a été développée pour identifier le dopage résiduel de la couche GaN, lequel est un paramètre important des substrats GaN et était par ailleurs difficile à évaluer. Un deuxième axe de recherche a consisté à proposer des techniques de mesure fiables ainsi qu’une modélisation des propriétés de transport du gaz d'électrons 2D. Dans ce cadre, des mesures split-CV et effet Hall ont été réalisées en fournissant pour chacune d’elles un protocole expérimental adéquat, avec un montage innovant pour les mesures effet Hall. Ce travail expérimental a été enrichi par une modélisation des propriétés du transport du 2DEG basée sur le formalisme de Kubo-Greenwood. Enfin, dans un dernier axe de recherche, un aspect plus général visant la compréhension en profondeur de l’électrostatique de l’empilement de la grille de nos GaN-MOS-HEMT a été proposé. Il est basé sur la caractérisation électrique C-V, la modélisation et l’extraction des paramètres. Le modèle développé a permis de souligner l'impact des charges surfaciques de polarisation et des défauts sur la tension de seuil des MOS-HEMT. Ce modèle a également permis d’estimer une valeur de la déformation dans les couches GaN épitaxiées sur un substrat Silicium. / This thesis aims at studying the electrical characterization and modelling of two-dimensional (2D) electron gas in MOS-HEMT devices based on the hetero-junction AlGaN/AlN/GaN. These devices are very promising candidates for power electronics applications. This research work provides the production team with detailed data on phenomena affecting GaN material. The goal is to understand precisely how 2D electron gas works and evaluate its electronic transport properties. A new methodology has been developed to identify residual doping of the GaN layer. This method was developed in order to answer a real need to know this doping to determine the quality of the epitaxial GaN layer. The second research priority was to provide reliable measurement techniques and modelling of the transport properties of 2D electron gas. Within this framework, the split-CV and Hall effect measurements were carried out by providing for each of them a suitable experimental protocol, with an innovative set-up for Hall effect measurements. In addition, this experimental work was supported by modelling the transport properties of 2DEG based on Kubo-Greenwood's formalism. Finally, a more general aspect aimed at an in-depth understanding of the electrostatic stacking of the GaN-MOS-HEMT gate. It is based on C-V electrical characterization, modelling and parameter extraction. The model developed made it possible to highlight the impact of polarization surface charges and defects on the threshold voltage of MOS-HEMT. This model also contributed to the estimation of the value of deformation in epitaxial GaN layers on a Silicon substrate.

Cílem diplomové práce bylo nastudovat a popsat mechanismy transportu náboje v tantalovém kondenzátoru. Práce obsahuje stručný teoretický úvod do problematiky kondenzátoru jako součástky a dále se zabývá jednotlivými mechanismy přenosu náboje jako je ohmická, Poole-Frenkel proudová, Schottkyho, tunelovací a emisní složka a také proudem prostorového náboje. V experimentální části byly měřeny ampér-voltové I/V, ampér-časové I/t a impedanční charakteristiky, jejichž data byla následně zpracována pomocí např. Mott-Schottkyho analýzy a byly vyhodnoceny elektrické parametry jako je aktivační energie, koncentrace dopantů, akumulační kapacita nebo potenciálová bariéra. Výsledky, vypočtené veličiny a naměřené hodnoty jsou diskutovány.

In this study, flash memory cells with high-k dielectric HfO2 as tunnel oxide and group IV (Si, Ge) nanocrystals were fabricated and tested. The device structure was grown by magnetron sputtering deposition method and analyzed by various diagnostic techniques such as X-ray Photoelectron Spectroscopy (XPS) and Raman spectroscopy. The use of HfO2 tunnel oxide dielectric with high permittivity constant was one of the main purposes of this study. The ultimate aim was to investigate the use of Si and Ge nanocrystals together with HfO2 tunnel oxide in the memory elements. Interface structure of the fabricated devices was studied by XPS spectroscopy. A depth profile analysis was performed with XPS. Nanocrystal formations were verified using Raman spectroscopy technique. The final part of the study includes electrical characterization of memory devices fabricated using Si and Ge floating gate. C-V (Capacitance Voltage) and G-V (Conductance-Voltage) measurements and charge storage behaviour based on C-V measurements were performed. For comparison, structure of Si and Ge layers either in thin film or in the nanocrystal form were studied. A comparison of the C-V characteristics of these two structures revealed that the memory device with thin films do not confine charge carriers under the gate electrode as should be expected for a continuous film. On the other hand, the device with nanocrystals exhibited better memory behavior as a result of better confinement in the isolated nanocrystals. Trace amount of oxygen was found to be enough to oxidize Ge nanocrystals as confirmed by the Raman measurements. The charge storage capability is weakened in these samples as a result of Ge oxidation. In general, this work has demonstrated that high-k dielectric HfO2 and group IV nanocrystals can be used in the new generation MOS based memory elements. The operation of the memory elements are highly dependent on the material and device structures, which are determined by the process conditions.

Orientador: Antônio Carlos de Jesus / Banca: Eron Brum / Banca: Ângelo Sottovia Aranha / Resumo: Com o advento dos novos meios tecnológicos, em destaque a internet, nas últimas décadas do século passado, houve uma grande transformação na sociedade, que, inserida no universo digital, fez dos dispositivos tecnológicos suas principais ferramentas de produção. Diante desse quadro, a informação tornou-se o novo ouro. Empresas se especializaram na produção e divulgação de informações para atender a uma massa cada vez mais ávida por esse produto. Nesse novo quadro, o jornalismo foi um dos setores que mais sofreu mudanças com o advento das novas ferramentas tecnológicas. Em pouco tempo, houve uma explosão de sites de informação e o jornalismo ganhou mais agilidade tanto na produção quanto na divulgação e recepção das notícias. Em contrapartida, o jornalismo impresso, numa tentativa de adaptação à nova mídia, distanciou-se da forma tradicional de se fazer jornalismo, apoiada em fontes reais, para se utilizar da fonte virtual da grande rede. Surge, então, um jornalismo burocrático, apoiado nas informações veiculadas pelos sites de notícias e em e-mails (endereços eletrônicos). O tempo passa a ser o principal inimigo da qualidade e o 'control C control V' - famoso copiar e colar - entra nas redações dos jornais impressos como ferramenta normal para a produção da notícia, propiciando o que Bernardo Kucinski (2002) chama de "mesmice jornalística', através de um discurso jornalístico unificado. Assim, diante dessa influência da internet sobre o jornalismo impresso, surgiu esta pesquisa, que terá como principal base teórica as idéias de Bernardo Kucinski; Nelson Traquina e Jorge Pedro Souza / Abstract: Whith the advent of new technologies, highlights the internet, in the last decades of the last century, there was a great transformation in society, which entered the digital universe, made the technological devices its main tools of production. Given this framework, information has become the new gold. Companies specialized in the production and dissemination of information to meet a mass increasingly avid for this product. In this new framework, journalism was one of the sectors that suffered most changes with the advent of new technological tools. Soon, there was an explosion of sites for information and journalism has earned more agility in manufacturing as both the receipt and dissemination of news. On the departure, the print journalism in an attempt to adapt to new media, distanced themselves from traditional way of doing journalism, supported by actual sources for using the source of large virtual network. Surge then a journalism bureaucratic, supported by the information linked to news sites and e-mail (email addresses). Time passes be the main enemy of quality and 'control control V C' - famous copy and paste - enter the writing of newspapers printed as normal tool for the production of news, providing what Bernardo Kucinski (2002) calls "mesmice Jornalística" Through a unified journalistic discourse. Thus, before this influence of the internet on print journalism emerged this research, which will be mainly based on the theoretical ideas of Bernardo Kucinski; Nelson Traquina and Jorge Pedro Souza / Mestre

Made available in DSpace on 2014-06-11T19:24:04Z (GMT). No. of bitstreams: 0 Previous issue date: 2008-10-20Bitstream added on 2014-06-13T19:10:08Z : No. of bitstreams: 1 bassetto_sr_me_bauru.pdf: 1064996 bytes, checksum: 420f24ad336a3d892ecb7071863edb93 (MD5) / Universidade Estadual Paulista (UNESP) / Com o advento dos novos meios tecnológicos, em destaque a internet, nas últimas décadas do século passado, houve uma grande transformação na sociedade, que, inserida no universo digital, fez dos dispositivos tecnológicos suas principais ferramentas de produção. Diante desse quadro, a informação tornou-se o novo ouro. Empresas se especializaram na produção e divulgação de informações para atender a uma massa cada vez mais ávida por esse produto. Nesse novo quadro, o jornalismo foi um dos setores que mais sofreu mudanças com o advento das novas ferramentas tecnológicas. Em pouco tempo, houve uma explosão de sites de informação e o jornalismo ganhou mais agilidade tanto na produção quanto na divulgação e recepção das notícias. Em contrapartida, o jornalismo impresso, numa tentativa de adaptação à nova mídia, distanciou-se da forma tradicional de se fazer jornalismo, apoiada em fontes reais, para se utilizar da fonte virtual da grande rede. Surge, então, um jornalismo burocrático, apoiado nas informações veiculadas pelos sites de notícias e em e-mails (endereços eletrônicos). O tempo passa a ser o principal inimigo da qualidade e o 'control C control V' - famoso copiar e colar - entra nas redações dos jornais impressos como ferramenta normal para a produção da notícia, propiciando o que Bernardo Kucinski (2002) chama de mesmice jornalística', através de um discurso jornalístico unificado. Assim, diante dessa influência da internet sobre o jornalismo impresso, surgiu esta pesquisa, que terá como principal base teórica as idéias de Bernardo Kucinski; Nelson Traquina e Jorge Pedro Souza / Whith the advent of new technologies, highlights the internet, in the last decades of the last century, there was a great transformation in society, which entered the digital universe, made the technological devices its main tools of production. Given this framework, information has become the new gold. Companies specialized in the production and dissemination of information to meet a mass increasingly avid for this product. In this new framework, journalism was one of the sectors that suffered most changes with the advent of new technological tools. Soon, there was an explosion of sites for information and journalism has earned more agility in manufacturing as both the receipt and dissemination of news. On the departure, the print journalism in an attempt to adapt to new media, distanced themselves from traditional way of doing journalism, supported by actual sources for using the source of large virtual network. Surge then a journalism bureaucratic, supported by the information linked to news sites and e-mail (email addresses). Time passes be the main enemy of quality and 'control control V C' - famous copy and paste - enter the writing of newspapers printed as normal tool for the production of news, providing what Bernardo Kucinski (2002) calls mesmice Jornalística Through a unified journalistic discourse. Thus, before this influence of the internet on print journalism emerged this research, which will be mainly based on the theoretical ideas of Bernardo Kucinski; Nelson Traquina and Jorge Pedro Souza

The speed and complexity of globalisation and reduction of natural resources on the one hand, and interests of large multinational corporations on the other, necessitates proper management of mineral resources and consumption. The need for scientific research and application of new methodologies and approaches to maximise Net Present Value (NPV) within mining operations is essential. In some cases, drill core logging in the field may result in an inadequate level of information and subsequent poor diagnosis of geological phenomenon which may undermine the delineation or separation of mineralised zones. This is because the interpretation of individual loggers is subjective. However, modelling based on logging data is absolutely essential to determine the architecture of an orebody including ore distribution and geomechanical features. For instance, ore grades, density and RQD values are not included in conventional geological models whilst variations in a mineral deposit are an obvious and salient feature. Given the problems mentioned above, a series of new mathematical methods have been developed, based on fractal modelling, which provide a more objective approach. These have been established and tested in a case study of the Kahang Cu-Mo porphyry deposit, central Iran. Recognition of different types of mineralised zone in an ore deposit is important for mine planning. As a result, it is felt that the most important outcome of this thesis is the development of an innovative approach to the delineation of major mineralised (supergene and hypogene) zones from ‘barren’ host rock. This is based on subsurface data and the utilisation of the Concentration-Volume (C-V) fractal model, proposed by Afzal et al. (2011), to optimise a Cu-Mo block model for better determination of an ultimate pit limit. Drawing on this, new approaches, referred to Density–Volume (D–V) and RQD-Volume (RQD-V) fractal modelling, have been developed and used to delineate rock characteristics in terms of density and RQD within the Kahang deposit (Yasrebi et al., 2013b; Yasrebi et al., 2014). From the results of this modelling, the density and RQD populations of rock types from the studied deposit showed a relationship between density and rock quality based on RQD values, which can be used to predict final pit slope. Finally, the study introduces a Present Value-Volume (PV-V) fractal model in order to identify an accurate excavation orientation with respect to economic principals and ore grades of all determined voxels within the obtained ultimate pit limit in order to achieve an earlier pay-back period.

Depuis 40 ans, suivant le rythme dicté par la loi de Moore, la microélectronique évolue de façon continue grâce à la réduction constante des dimensions des transistors MOS. Celle-ci a entraîné pour les grilles polycristallines des transistors PMOS l'apparition de la déplétion de grille et de la pénétration du bore dans l'isolant, dégradant fortement leurs performances, lorsque le dopage par implantation ionique est utilisé. Afin de réduire ces deux effets, nous proposons une autre forme de dopage pour l'électrode de grille: un dépôt de silicium amorphe à basse température, dopé bore in-situ, à partir de BCl3 et de Si2H6. Le premier chapitre de cette thèse est consacré à une étude bibliographique portant sur l'état de l'art et les solutions technologiques proposées pour améliorer les performances des transistors MOS. A partir de cette étude, nous montrons tout l'intérêt de la solution technologique que nous proposons. Le second chapitre est dédié au développement de simulateurs capacité-tension et courant-tension. Nous montrons que la prise en compte du confinement des porteurs aux interfaces est indispensable afin d'extraire les paramètres des composants avec le maximum de précision lors de la caractérisation électrique. Enfin, dans le troisième chapitre, nous donnons les résultats des études expérimentales de la couche de polysilicium (résistivité, contraintes, rugosité&) et de capacités MOS polySi(P+) / SiO2 (3,8nm) / Si. Malgré une amélioration nécessaire de la fiabilité de la couche de SiO2, la caractérisation nous montre que la déplétion de grille est pratiquement inexistante.

Afin de satisfaire aux exigences de plus en plus contraignantes imposées par la Roadmap ITRS, l'industrie microélectronique doit aujourd'hui envisager un certain nombre de révolutions dans ses procédés de fabrication des composants. En effet, la seule miniaturisation des dimensions du transistor à effet de champ Métal-Oxyde-Semiconducteur (MOSFET) ne suffit plus à améliorer les performances des dispositifs électroniques et de nouvelles approches doivent être imaginées. Parmi les solutions envisagées, l'une des plus prometteuses consiste à remplacer l'isolant de grille «historique» en oxyde de silicium (SiO2) et la grille en polysilicium par un couple constitué d'une grille métallique et d'un matériau isolant possédant une plus forte permittivité diélectrique. Ce travail présente ainsi les effets du couple grille TiN/dioxyde d'hafnium HfO2 sur les performances électriques d'un MOSFET en étudiant un paramètre caractéristique du transport électrique dans le canal de conduction, à savoir la mobilité des porteurs libres en régime d'inversion. Pour ce faire, une étude théorique des différentes interactions limitant la mobilité des porteurs dans ces nouvelles architectures a d'une part été réalisée. D'autre part, des techniques expérimentales innovantes d'extraction de la mobilité ont été développées (magnétorésistance, split C-V pulsé) pour caractériser finement nos dispositifs. La conjonction de ces deux approches a ainsi permis de déterminer avec précision les interactions prédominantes dans la réduction de mobilité des porteurs liées à l'utilisation d'une grille métallique TiN et d'un oxyde de grille de forte permittivité HfO2.

In this dissertation, we investigates the electrical stress induced degradation in low-temperature polycrystalline-silicon thin film transistors (LTPS TFTs) applied for system-on-panel (SOP), including the electrical degradations of device for switch operation in active matrix flat-panel displays, driving circuit and nonvolatile memory. Finally, we also present the reliability of LTPS TFTs applied for flexible displays. In first part, electrical degradation of conventional and pattered metal-shielding LTPS TFTs under darkened and illuminated dynamic AC stresses are investigated. Experimental results reveal that competitive mechanisms are generated in conventional LTPS TFTs during illuminated stress, namely, carrier increase and electric field weakening. This phenomenon is verified by stressing the patterned source/drain open metal-shielding LTPS TFTs, which determines that the electric field weakening dominates; conversely, the carrier increase is dominated the electrical degradation in channel open metal-shielding device under illuminated stress. In addition, an improvement in anomalous on-current and subthreshold swing (S.S.) in n-channel LTPS TFTs after positive gate bias stress are studied. These improved electric properties are due to the hole trapping at SiO2 above the lightly doped drain regions, which causes a strong electric field at the gate corners. The effect of the hole trapping is to reduce the effective channel length and the S.S.. Besides, the stress-related electric field was also simulated by TCAD software to verify the mechanism above. Secondly, a mechanism of anomalous capacitance in p-channel LTPS TFTs was investigated. In general, the effective capacitance of the LTPS TFTs was only dependent with the overlap area between gate and source/drain under the off-state. However, the experimental results reveal that the off-state capacitance was increased with decreasing measurement frequency and/or with increasing measurement temperature. Besides, by fitting the curve of drain current versus electric field under off-state region, it was verified that the TAGIDL is consisted of the Pool-Frenkel emission and Thermal-Field emission. In addition, the charge density calculated from the Cch-Vg measurement also the same dependence with electric field. This result demonstrates that the anomalous capacitance is mainly due to the trap-assisted-gate-induced-drain-leakage (TAGIDL). In order to suppress the anomalous capacitance, a band-to-band hot electron (BTBHE) stress was utilized to reduce the vertical electric field between the gate and the drain. In third part, in order to realize the reliability in p-channel TFTs under illuminated environment operation, the degradation of negative bias temperature instability (NBTI) with illumination effect is investigated. The generations of interface state density (Nit) are identical under various illuminated intensity DC NBTI stresses. Nevertheless, the degradation of the grain boundary trap (Ntrap) under illumination was more significant than for the darkened environment, with degradation increasing as illumination intensity increases. This phenomenon is mainly caused by the extra number of holes generated during the illuminated NBTI stress. The increased Ntrap degradation leads to an increase in the darkened environment leakage current. This indicates that more traps are generated in the drain junction region that from carrier tunneling via the trap, resulting in leakage current. Conversely, an increase of Ntrap degradation results in a decrease in the photoleakage current. This indicates that the number of recombination centers increases in poly-Si bulk, affecting photosensitivity in LTPS TFTs. Besides, the transient effect assisted NBTI degradation in p-channel LTPS TFTs under dynamic stress is also presented, in which the degradation of the Ntrap becomes more significant as rise time decreases to 1 £gs. Because the surface inversion layer cannot form during the short rise time, transient bulk voltage will cause excess holes to diffuse into the poly-Si bulk. Therefore, the significant Ntrap increase is assisted by this transient effect. Fourthly, we study the electric properties of n- and p-channel LTPS TFTs under the mechanical tensile strain. The improved on-current for tensile strained n-channel TFTs is originated form an increase in energy difference between 2- and 4-fold valleys, reducing the inter-valley scattering and further improving the carrier mobility. On the contrary, the hole mobility decreases in p-channel, suggesting the split between the light hole and heavy hole energy bands and an increase in hole population on the heavy hole energy band of poly-Si when the uniaxial tensile strain is parallel to the channel direction. In addition, the Nit and Ntrap degradations induced by NBTI for tensile strained LTPS TFTs are more pronounced than in the unstrained. Extracted density-of-states (DOS) and conduction activation energy (EA) both show increases due to the strained Si-Si bonds, which implies that strained Si-Si bonds are able to react with dissociated H during the NBTI stress. Therefore, the NBTI degradation is more significant after tensile strain than in an unstrained condition. Finally, the SONOS-TFT applied to nonvolatile memory is prepared and studied. In the gate disturb stress, a parasitic capacitance and resistance in off-state region are identified as electrons trapped in the gate-insulator (GI) near the defined gate region. Meanwhile, these trapping electrons induced depletions in source/drain also degraded the I-V characteristic when the gate bias is larger than the threshold voltage. However, these degradations slightly recover when the trapped electrons are removed after negative bias stress. The electric field in the undefined gate region is also verified by TCAD simulation software.