Non-healing bone defects have a significant socioeconomic impact in the U.S. with approximately 600,000 bone grafting procedures performed annually. Autografts and allografts are clinically the most common treatments; however, autologous donor bone is in limited supply, and allografts often have poor mechanical properties. Therefore, tissue engineering and regenerative medicine strategies are being developed to address issues with clinical bone grafting. The overall objective of this work was to develop bone tissue engineering strategies that enhance healing of orthotopic defects by targeting specific osteogenic cell signaling pathways. The general approach included the investigation of two different tissue engineering strategies, which both focused on directed osteoblastic differentiation to promote bone formation. In the first cell-based strategy, we hypothesized that constitutive overexpression of the osteoblast-specific transcription factor, Runx2, in bone marrow stromal cells (BMSCs) would promote orthotopic bone formation in vivo. We tested this hypothesis by delivering Runx2-modified BMSCs on synthetic scaffolds to critically-sized defects in rats. We found that Runx2-modified BMSCs significantly increased orthotopic bone formation compared to empty defects, cell-free scaffolds and unmodified BMSCs. This gene therapy approach to bone regeneration provides a mineralizing cell source which has clinical relevance. In the second biomaterial-based strategy, we hypothesized that incorporation of the collagen-mimetic peptide, GFOGER, into synthetic bone scaffolds would promote orthotopic bone formation in vivo without the use of cells or growth factors. We tested this hypothesis by passively adsorbing GFOGER onto poly-caprolactone (PCL) scaffolds and implanting them into critically-sized orthotopic defects in rats. We found that GFOGER-coated scaffolds significantly increased bone formation compared to uncoated scaffolds in a dose dependent manner. Development of this cell-free strategy for bone tissue engineering provides an inexpensive therapeutic alternative to clinical bone defect healing, which could be implemented as a point of care application. Both strategies developed in this work take advantage of specific osteoblastic signaling pathways involved in bone healing. Further development of these tissue engineering strategies for bone regeneration will provide clinically-relevant treatment options for healing large bone defects in humans by employing well-controlled signals to promote bone formation and eliminating the need for donor bone.

Die Kenntnisse über die zur Passivierung führenden Wechselwirkungen des Verunreinigungselements Cu mit EL2 und EL6 wurden dahingehend erweitert, dass ein Gültigkeitsbereich für die Messungen zur Bestimmung der konzentrationsproportionalen Messgröße der Defekte festgelegt wurde. Der Defekt EL6 ist das die 0.8 eV-PL-Emission bedingende und die Ladungsträgerlebensdauer determinierende Rekombinationszentrum. Die Lebensdauer wird durch mindestens ein weiteres Zentrum beeinflusst. Die atomare Struktur des EL6 wurde mit AsGa VAs und die des weiteren Zentrums mit Asi bestimmt. Mittels Wärmebehandlung kann die Ladungsträgerlebensdauer gezielt beeinflusst werden. Bei der Bildung und Annihilation sowie der Verteilung der Defekte EL2, EL6, VGa und der As-Ausscheidungen besteht eine wechselseitige Korrelation. Sowohl strukturelle Defekte als auch die Inkorporation von Dotierelementen, deren Atomradien deutlich kleiner sind als Ga und As, stellen beeinflussende Faktoren dar. Das Defekt-Transformations-Modell erklärt die Bildung wachstumsfähiger Keime einer As-Ausscheidung durch EL2 bzw. EL6 mit den sich in der ersten Koordingationssphäre befindenden As-Atomen. Das Gitterrelaxations-Modell ermöglicht die Interpretation der katalytischen Wirkung des Dotierelements C. Die Umsetzung dieser Ergebnisse bedeutet die Anwendung des Defect Engineerings im SI-LEC-GaAs.

Gegenstand des Vorhabens im Rahmen der WTZ mit Russland ist die Versprödung des Reaktordruckbehälters infolge der Strahlenbelastung mit schnellen Neutronen im kernnahen Bereich. Um den Einfluss von bestrahlungsinduzierten Gitterdefekten auf die mechanischen Eigenschaften zu ermitteln, wurden analytische Berechnungen zum Einfluss von Hindernissen auf die Beweglichkeit von Versetzungen und damit auf die Ausbildung einer plastischen Zone an der Rissspitze durchgeführt. Es wird demonstriert, dass sich die an der Rissspitze entstehenden Versetzungen an dem Hindernis (bestrahlungsinduzierte Punktdefekte) aufstauen. In Abhängigkeit der Rissbelastung KI und der Entfernung des Hindernisses von der Rissspitze werden die Versetzungsdichte und das durch den Versetzungsstau verursachte Spannungsfeld berechnet. Mit Hilfe von Experimenten zur Neutronenkleinwinkelstreuung (SANS - small angle neutron scattering) an verschiedenen WWER-Stählen und Modelllegierungen wurden Größenverteilungen und die Volumenanteile der strahleninduzierten Defekte für verschiedene Bestrahlungszustände (Fluenzen, Bestrahlungstemperaturen) ermittelt. Es wurde gezeigt, dass sich die strahleninduzierte Werkstoffschädigung durch Wärmebehandlung weitgehend wieder ausheilen lässt. Nach der thermischen Ausheilung ist der Werkstoff bei erneuter Bestrahlung weniger anfällig für strahleninduzierte Defekte. Die Ergebnisse der SANS-Untersuchungen wurden mit der Änderung der mechanischen Eigenschaften (Härte, Streckgrenze und Sprödbruchübergangstemperatur) korreliert. Mit der kinetischen Gitter-Monte-Carlo-Methode wurden numerische Sensitivitätsstudien zum Einfluss des Cu-Gehalts auf die Stabilität von Defekt-Clustern durchgeführt. Die Berechnungen zeigen, dass die Anwesenheit von Cu-Atomen zur Bildung von langlebigen Defekten führt. Dabei werden Leerstellen in Cu/Leerstellen-Cluster eingefangen. Leerstellen in reinem Eisen sind bei Bestrahlungstemperaturen von 270 °C dagegen nicht stabil, die Lebensdauer liegt zwischen 0.01 s und 1 s. Die kritische Cu-Konzentration, ab welcher stabile Defekte entstehen, beträgt ca. 0.1 Masseprozent.

Austin Logistics Inc. Solutions provides tools that help centralize resource management, optimize and maintain compliance of calling schedules for consumer financial service organization (banks, financial institutions). With the increasing number of customers, the amount of rework and availability of resources had been notably decreasing over time; thereby negatively affecting the overall cost and quality of the software being delivered. The improvement objectives of the company and its departments were broadly stated but lacking a goal-driven nature. The software measurement Goal-Question-Metric (GQM) approach was chosen and used for this research initiative to better support business driven quality improvement. Software defect density data was collected and analyzed to identify significant deviations in the software development life cycle.. The results of the initial analysis on the transformed defect-tracking data helped identify the negatively affected areas within the software development life cycle. The data showed significant variations in the requirements, design and implementation phases of the product life cycle, thus helping identify various process improvement opportunities. On quantifying the change in defect density, the effectiveness of using GQM has also provided valuable insights for process improvement. Based on these results, we were able to identify some of the weaknesses and shortcomings in our application development process. / text

Testing integrated circuits to verify their operating frequency, known as delay testing, is essential to achieve acceptable product quality. The high cost of functional testing has driven the industry to automatically-generated structural tests, applied by low-cost testers taking advantage of design-for-test (DFT) circuitry on the chip. Traditional at-speed functional testing of digital circuits is increasingly challenged by new defect types and the high cost of functional test development. This research addressed the problems of accurate delay testing in DSM circuits by targeting resistive open and short circuits, while taking into account manufacturing process variation, power dissipation and power supply noise. In this work, we developed a class of structural delay tests in which we extended traditional launch-on-capture delay testing to additional launch and capture cycles. We call these Pseudofunctional Tests (PFT). A test pattern is scanned into the circuit, and then multiple functional clock cycles are applied to it with at-speed launch and capture for the last two cycles. The circuit switching activity over an extended period allows the off-chip power supply noise transient to die down prior to the at-speed launch and capture, achieving better timing correlation with the functional mode of operation. In addition, we also proposed advanced compaction methodologies to compact the generated test patterns into a smaller test set in order to reduce the test application time. We modified our CodGen K longest paths per gate automatic test pattern generator to implement PFT pattern generation. Experimental results show that PFT test generation is practical in terms of test generation time.

There are several reasons to be interested in conformal field theories in two dimensions. Apart from arising in various physical applications, ranging from statistical mechanics to string theory, conformal field theory is a class of quantum field theories that is interesting on its own. First of all there is a large amount of symmetries. In addition, many of the interesting theories satisfy a finiteness condition, that together with the symmetries allows for a fully non-perturbative treatment, and even for a complete solution in a mathematically rigorous manner. One of the crucial tools which make such a treatment possible is provided by category theory. This thesis contains results relevant for two different classes of conformal field theory. We partly treat rational conformal field theory, but also derive results that aim at a better understanding of logarithmic conformal field theory. For rational conformal field theory, we generalize the proof that the construction of correlators, via three-dimensional topological field theory, satisfies the consistency conditions to oriented world sheets with defect lines. We also derive a classifying algebra for defects. This is a semisimple commutative associative algebra over the complex numbers whose one-dimensional representations are in bijection with the topological defect lines of the theory. Then we relax the semisimplicity condition of rational conformal field theory and consider a larger class of categories, containing non-semisimple ones, that is relevant for logarithmic conformal field theory. We obtain, for any finite-dimensional factorizable ribbon Hopf algebra H, a family of symmetric commutative Frobenius algebras in the category of bimodules over H. For any such Frobenius algebra, which can be constructed as a coend, we associate to any Riemann surface a morphism in the bimodule category. We prove that this morphism is invariant under a projective action of the mapping class group ofthe Riemann surface. This suggests to regard these morphisms as candidates for correlators of bulk fields of a full conformal field theories whose chiral data are described by the category of left-modules over H.

Interactive handheld electronic displays use hydrogenated amorphous silicon (a-Si:H) thin film transistor (TFT) as a backplane and a Touch Screen Panel (TSP) on top as an input device. The low mobility and instability of a-Si:H TFT threshold voltage are major two issues for driving constant current as required for Active Matrix Organic Light Emitting Ddiode (AMOLED) displays. Low mobility is compensated by increasing transistor width or resorting to more expensive material TFTs. On the other hand, the ever increasing threshold voltage shift degrades the drain current under electrical operation causing OLED display to dim. Mutual capacitive TSP, the current cell phone standard, requires two layers of metals and a dielectric to be put in front of the display, further dimming the device and adding to visual noise due to sun reflection, not to mention increased integration cost and decreased yield. This thesis focuses on the aforementioned technological hurdles of a handheld electronic display by proposing a dual-gate TFT used as an OLED current driving TFT and a novel phase response readout scheme that can be applied to a one metal track TSP. Our dual-gate TFT has shown on average 20% increase in drive current over a single gate TFT fabricated in the same batch, attributed to the aid of a top channel to the convention bottom channel TFT. Furthermore the dual gate TFT shows three times the Poole-Frenkel current than the single gate TFT attributed to the increase in gate to drain overlap. The dual-gate TFT shows a 50% improvement in threshold voltage shift over a single gate TFT at room temperature, but only ~8% improvement under 75ºC. This is an important observation as it shows an accelerated threshold voltage shift in the dual-gate. This difference in the rate of threshold voltage change under varying temperature is attributed to the difference in interface states, supporting Libsch and Kanicki’s multi-level temperature dependant dielectric trapping model. The phase response TSP readout scheme requires IC only on one side of the display. Cadence Spectre simulation results showed that both touch occurrence and touch position can be obtained using only one metal layer.

Terahertz radiation or T-rays or THz radiation refers to the region of the electromagnetic spectrum between approximately 100 GHz and 30 THz. This spectral region is often referred to as the THz gap as these frequencies fall between electronic (measurement of field with antennas) and optical (measurement of power with optical detectors) means of generation. THz measurements may yield useful information about the structural and chemical nature of the material inspected. Examples include detection of voids in materials and protein binding in biomolecules. This report provides an overview of THz measurements of defects in fiber composites. We find that it efficiently detects defects such as voids and delamination in glass fiber composites better than ultrasound, which was widely used for defect characterization in glass fiber earlier. Comparison of the existing methods with THz is presented in the report for characterization of defects.

Nano-objects have unique properties due to their sizes, shapes and structure. When electronic properties of such nano-objects are used to build devices, the control of interfaces at atomic level is required. In this thesis, systems were built that can not only electrically characterize nano-objects, but also allow to analyze a large number of individual nano-objects statistically at the example of graphene and nanoparticle-molecule-nanoelectrode junctions. An in-situ electrical characterization system was developed for the analysis of free standing graphene sheets containing defects created by an acid treatment. The electrical characterization of several hundred sheets revealed that the resistance in acid treated graphene sheets decreased by 50 times as compared to pristine graphene and is explained by the presence of di-vacancy defects. However, the mechanism of defect insertion into graphene is different when graphene is bombarded with a focused ion beam and in this case, the resistance of graphene increases upon defect insertion. The defect insertion becomes even stronger at liquid N2 temperature. A molecular electronics platform with excellent junction properties was fabricated where nanoparticle-molecule chains bridge 15-30nm nanoelectrodes. This approach enabled a systematic evaluation of junctions that were assembled by functionalizing electrode surfaces with alkanethiols and biphenyldithiol. The variations in the molecular device resistance were several orders of magnitude and explained by variations in attachment geometries of molecules.  The spread of resistance values of different devices was drastically reduced by using a new functionalization technique that relies on coating of gold nanoparticles with trityl protected alkanedithiols, where the trityl group was removed after trapping of nanoparticles in the electrode gap. This establishment of a reproducible molecular electronics platform enabled the observation of vibrations of a few molecules by inelastic tunneling spectroscopy. Thus this system can be used extensively to characterize molecules as well as build devices based on molecules and nanoparticles.

A redistribuição e ativação elétrica dos dopantes tipo n (As e Sb) e tipo p (Ga e In) em Si com excesso de vacâncias foram analisadas. As vacâncias foram geradas por implantação iônica de altas doses de oxigênio ou nitrogênio em alta temperatura, de acordo com procedimentos já estudados. Em seguida foram implantados os dopantes com dose de 5x1014 cm-2 a 20 keV na região rica em vacâncias. Dopagens idênticas foram realizadas em amostras de Si sem vacâncias e em SIMOX. Em seguida foram feitos recozimentos a 1000ºC por 10 s ou 15 min. Os perfis atômicos dos dopantes foram medidos com Medium Energy Ion Scattering e os perfis dos dopantes ativados, com Hall diferencial. A redistribuição e as propriedades elétricas de cada um dos dopantes no Si sem vacâncias foram bastante similares às observadas no SIMOX, porém várias diferenças foram observadas em relação às amostras com excesso de vacâncias. As vacâncias reduziram a ativação elétrica do As e do Sb, mas proporcionaram maior estabilidade da ativação após recozimentos longos. A redistribuição destes dopantes foi infuenciada pelo íon usado na geração das vacâncias, ou seja, nitrogênio ou oxigênio. O oxigênio proporcionou maior dose retida de As e o nitrogênio, maior dose retida de Sb. Já para o Ga e o In, as vacâncias tiveram papel fundamental na sua redistribuição, diminuindo a difusão para fora das amostras e garantindo maior dose retida. A ativação elétrica do Ga e especialmente a do In foram baixas, onde observamos forte influência do íon pré-implantado, principalmente o oxigênio. / The redistribution and electrical activation of n type (As and Sb) and p type (Ga and In) dopants in Si with excess vacancy concentration were analyzed. The vacancies were formed by high dose ion implantation of oxygen or nitrogen at high temperature, following previously studied procedures. Dopants were implanted to a dose of 5x1014 cm-2 at 20 keV in the vacancy rich regions of the samples. Identical doping implantations were performed in bulk Si and SIMOX. Samples were then submitted to thermal annealing at 1000ºC for 10 s or 15 min. The dopants atomic profiles were obtained by Medium Energy Ion Scattering and the active dopant profiles, by differential Hall measurements. The redistribution and the electrical properties of each dopant in bulk Si were similar to those observed in SIMOX, but several differences were observed in the vacancy-rich samples. Vacancies reduced the electrical activation of As and Sb, although the activation was maintained stable after long annealing times. The redistribution of these dopants was, otherwise, dominated by the ion used in the vacancy generation, i.e., nitrogen or oxygen. The presence of oxygen resulted in larger As retained dose, while the presence of nitrogen, in larger Sb retained dose. Regarding the p type dopants, Ga and In, the vacancies played an important role in their redistribution, reducing their out-diffusion and allowing larger retained doses. Ga and especially In electrical activation was low, where strong influence of the pre-implanted ions was observed, especially oxygen.