Thesis (Ph.D.)--Mississippi State University. Department of Electrical and Computer Engineering. / Title from title screen. Includes bibliographical references.

This work focused on the fabrication and electrical characterization of electronic devices and the applications include the n-channel organic field-effect transistors (OFETs), organic complementary circuits, and the germanium nanowire transistors. In organic devices, carbonyl-functionalized [alpha],[omega]-diperfluorohexyl quaterthiophenes (DFHCO-4T) and N,N' --bis(n-octyl)-dicyanoperylene-3,4:9,10-bis(dicarboximide) (PDI-8CN2) are used as n-type semiconductors. The effect of dielectric/electrode surface treatment on the response of bottom-contact devices was also examined to maximize the device performance. Some of innovative techniques that employ the conducting polymer, poly(3,4-ethylenedioxythiophene) / poly(styrene sulfonate) (PEDOT/PSS) for the fabrication of OFETs, were compared and investigated. The device performance and the fabrication yield were also considered. Organic complementary ring oscillators and D flip-flops were demonstrated with PDI-8CN2 and pentacene as the n-type and ptype material, respectively. Both circuits recorded the highest speed that any organic transistor-based complementary circuit has achieved to date. The speed of these complementary circuits will be enhanced by increasing the mobility of n-channel further as well as reducing channel lengths and overlap capacitances between the source/drain electrodes and the gate. The semiconductors should be solution processible to be compatible with the inexpensive fabrication techniques envisioned for printed electronic circuits. PDI-8CN2 was used for solution-processed n-channel OFETs and the various parameters are compared for the optimization of devices. Utilizing optimized process parameters and surface treatments for solution-deposited PDI-8CN2 OFETs, we have successfully shown the first fabrication of complementary organic ring oscillators and Dflip flops by the micro-injection of the solution of both p-type and n-type materials in air. One of the potential platforms for low cost fabrication on flexible substrates is the use of inorganic semiconductor nanowires. Accordingly, the germanium nanowire FETs were fabricated and characterized. Conductivity enhanced PEDOT/PSS was employed as the electrode material for nanowire transistors to improve the electrical contacts to the source and drain. / text

The objective of proposed research is to investigate the potential of strained silicon and silicon-germanium (SiGe) based devices for RF/mixed-signal applications. Different device topologies, namely strained buried channel modulation doped field effect transistor (MODFET) and silicon-on-insulator (SOI) based MOSFETs, are studied in this context. Our preliminary results on SiGe MODFETs indicate strong dependence of device performance on displacement damage, which is critical for extreme environment applications. This research will be an effort towards understanding the physics of these devices in extreme environment conditions.

The underlying physical mechanisms of destructive single event effects (SEE) from heavy ion radiation have been widely studied in traditional vertical double-diffused power MOSFETs (VDMOS). Recently lateral double-diffused power MOSFETs (LDMOS), which inherently provide lower gate charge than VDMOS, have become an attractive option for MHz-frequency DC-DC converters in terrestrial power electronics applications [1]. There are growing interests in extending the LDMOS concept into radiation-hard space applications. Since the LDMOS has a device structure considerably different from VDMOS, the well studied single event burn-out (SEB) or single event gate rapture (SEGR) response of VDMOS cannot be simply assumed for LDMOS devices without further investigation. A few recent studies have begun to investigate ionizing radiation effects in LDMOS devices, however, these studies were mainly focused on displacement damage and total ionizing dose (TID) effects, with very limited data reported on the heavy ion SEE response of these devices [2]-[5]. Furthermore, the breakdown voltage of the LDMOS devices in these studies was limited to less than 80 volts (mostly in the range of 20-30 volts), considerably below the voltage requirement for some space power applications. In this work, we numerically and experimentally investigate the physical insights of SEE in two different fabricated LDMOS devices designed by the author and intended for use in radiation hard applications. The first device is a 24 V Resurf LDMOS fabricated on P-type epitaxial silicon on a P+ silicon substrate. The second device is a iv much different 150 V SOI Resurf LDMOS fabricated on a 1.0 micron thick N-type silicon-on-insulator substrate with a 1.0 micron thick buried silicon dioxide layer on an N-type silicon handle wafer. Each device contains internal features, layout techniques, and process methods designed to improve single event and total ionizing dose radiation hardness. Technology computer aided design (TCAD) software was used to develop the transistor design and fabrication process of each device and also to simulate the device response to heavy ion radiation. Using these simulations in conjunction with experimentally gathered heavy ion radiation test data, we explain and illustrate the fundamental physical mechanisms by which destructive single event effects occur in these LDMOS devices. We also explore the design tradeoffs for making an LDMOS device resistant to destructive single event effects, both in terms of electrical performance and impact on other radiation hardness metrics

Conjugated polymers have attracted much interest as promising alternatives to inorganic semiconductors, due to their low-temperature, solution-based processability, which may provide for low-cost, large-area electronic device fabrication. However, commercialization of polymer-based electronic devices has been restricted owing to low device performance of solidified thin-films. In order to enhance charge transport of polymer semiconductor thin-films, the self-organization of organic polymer semiconductors into ordered supramolecular assemblies has been achieved by tuning a range of process parameters including film deposition method (spin vs. drop cast), solvent boiling point (low vs. high boiling point), polymer-dielectric interface treatment, and post-deposition processing (solvent vapor or thermal annealing). However, these strategies give rise to limitations for large-scale high-throughput processing due to associated pre- and/or post semiconductor deposition steps. Therefore, in this thesis, we identify alternative processing parameters (i.e., hydrogen bonds between good and poor solvents, UV irradiation to polymer precursor solutions, and combination of sonication and subsequent UV irradiation to polymer precursor solutions) which can contribute to enhancement in charge transport of a model polymer semiconductor, poly(3-hexylthiophene) (P3HT), eliminating the additional pre- and/or post-steps mentioned above. Further, we understand of how the processing parameters effect intra- and intermolecular interactions of the polymer chains, micro- through macroscopic morphologies, and charge transport characteristics of the resultant films.

Anthradithiophene (ADT) derivatives have proven to be a front-runner in the world of small molecule semiconductors for organic electronics and optoelectronics. This is mainly due to the improved stability, easy tuning of chemical and physical properties, and impressive device performance that these molecules possess, especially in organic field effect transistors (OFET) and organic photovoltaics (OPV). The second chapter of this dissertation shows that reducing the amount of alkylsilylethynyl groups, used for functionalizing and solubilizing the ADT backbone, does alter the chemical, physical and crystallographic properties of ADTs. These changes offer the opportunity to study and observe different intermolecular interactions as well as monitoring their influence on sulfur scrambling in solid state. Additionally, from the early days ADTs and functionalized ADTs have been synthesized as isomeric mixtures. In chapter three, I demonstrate a new and simple method that can separate the syn and anti isomers of the F-TES-ADT and F-TEG-ADT chromatographically. The effects of isomeric purity on crystal packing and field effect transistor performance were studied extensively. Chapter four of this dissertation reveals a new generation of acceptor (electron poor) ADT derivatives obtained by attaching cyanide as electron withdrawing group (EWG) to the ADT chromophore. An extensive study was conducted on CN-ADT (acceptor) molecules in small molecule (F-TES-ADT) donor/ small molecule (CN-ADT) acceptor binary BHJ blends as well as P3HT/CN-ADT/PCBM ternary BHJ blends. Photophysical studies of the Donor/ acceptor blends (interface, domains, and crystal orientation) were conducted to obtain a better understanding of the film morphology and its effect on solar cell performance. Finally, the last part of the dissertation, Chapter five, focus on studying singlet fission in ADT derivatives, as well as the effect of varying the size of the alkylsilylethynyl functional group (used for solubilizing the ADT backbone) on altering the electronic couplings and how can that potentially affect the singlet fission rate in these molecules. We also tried to inspect the extent of the correlation between long-range order in crystal packing and singlet fission by monitoring singlet fission rate and efficiency for ADT derivatives with different thin film morphologies.

The π-conjugated organic and polymeric semiconducting materials have attracted much attention in the past years due to their significant potential in applications to electronic and optoelectronic devices including organic field-effect transistors (OFETs), organic photovoltaics (OPVs), and organic light-emitting diodes (OLEDs), etc. Yet, organic and polymeric semiconductors still have challenges associated with their relatively low charge carrier (hole and electron) transport mobilities and ambient stability in OFET applications. This dissertation discusses the molecular engineering on backbones and side-chains of π-conjugated semiconducting polymers to enhance the hole and electron field-effect mobilities. Three donor-acceptor copolymers, the hole transport (p-type) poly(hexathiophene-co-benzo- thiazole) (PBT6), the hole transport poly(thiophenes-benzothiadiazole-thiophenes-diketopyrrolo- pyrrole) (pTBTD), and the electron transport (n-type) poly(dithieno-diketopyrrolopyrrole-bithiazole) (PDBTz) have been developed. Besides, the effect of polymer side chains on polymer solution-processability and charge carrier transport properties was systematically investigated: a side chain 5-decylheptadecyl having the branching position remote from the polymer backbone merges the advantages of the improved solubility from traditional branched side chains in which the branch chains are close to polymer backbone and the effective π-π intermolecular interactions commonly associated with linear side chains. This indicates the potential of side chain engineering to facilitate the charge carrier transport performance of organic and polymeric semiconductors. Additionally, PDBTz solution-processing to OFETs based on non-halogenated solvents (xylenes and tetralin) was studied. The resultant thin-film OFET devices based on non-halogenated solvents exhibited similar film morphology and field-effect electron mobilities as the counterparts based on halogenated solvents, indicative of the feasibility of developing high mobility OFET devices through more environmentally-benign processing.

<p>This thesis deals with synthesis and characterization of newoligothiophenes and derivatives thereof, for use as organicsemiconductors in optical and electronic applications, such asfield-effect transistors and light-emitting diodes. Much workis devoted to the development of new synthetic strategies forinteresting building blocks, to beused for synthesizing suchmaterials. One series of regio-defined oligothiophenes, up tothe octamer, has been prepared and evaluated. Photoluminescencequantum efficiencies of these were 22-31 % in solution, butdropped to 2-5 % in the solid state. Another project deals withthe development of oligothiophenes with in-chain chirality.These may find use in polarized lightemitting diodes. Finally,two oligothienyl-substituted porphyrins have been synthesizedand are currently evaluated for use in light-emitting diodesand possibly in solar cells.</p>

No description available.

A simulation program has been developed to facilitate the investigation and analysis of power semiconductor devices under the reverse-bias condition. The electrostatic potential distribution is solved by using Poisson's equation alone, with particular attention to the neighborhood of avalanche breakdown. Because of its generality and efficiency, the program emerges as a powerful engineering tool for the design of power devices incorporating special junction termination techniques. Results are presented for a DMOS structure to illustrate the improvement in breakdown voltage when a field plate is applied. Numerical solution techniques for solving elliptic partial differential equations in a multi-material domain are discussed. The discretization of this domain is nonuniform in general due to its highly nonuniform physical parameters. By careful selection of grid lines near interfaces, the difference equation coefficients are considerably simplified. The resultant matrix of coefficients is symmetric even though Neumann boundary conditions are specified.