Interconnection layers fabricated during back end of line processing in semiconductor manufacturing involve dry etching of a low-k material and deposition of copper and metal barriers to create copper/dielectric stacks. After plasma etching steps used to form the trenches and vias in the dielectric, post etch residues (PER) that consist of organic polymer, metal oxides and fluorides, form on top of copper and low-k dielectric sidewalls. Currently, most semiconductor companies use semi aqueous fluoride (SAF) based formulations containing organic solvent(s) for PER removal. Unfortunately, these formulations adversely impact the environmental health and safety (EHS) requirements of the semiconductor industry. Environmentally friendly "green" formulations, free of organic solvents, are preferred as alternatives to remove PER. In this work, a novel low temperature molten salt system, referred as deep eutectic solvent (DES) has been explored as a back end of line cleaning (BEOL) formulation. Specifically, the DES system comprised of two benign chemicals, malonic acid (MA) and choline chloride (CC), is a liquid at room temperature. In certain cases, the formulation was modified by the addition of glacial acetic acid (HAc). Using these formulations, selective removal of three types of PER generated by timed CF₄/O₂ etching of DUV PR films on Cu was achieved. Type I PER was mostly organic in character (fluorocarbon polymer type) and had a measured thickness of 160 nm. Type II PER was much thinner (25 nm) and consisted of a mixture of organic and inorganic compounds (copper fluorides). Further etching generated 17 nm thick Type III PER composed of copper fluorides and oxides. Experiments were also conducted on patterned structures. Cleaning was performed by immersing samples in a temperature controlled (30 or 40° C) double jacketed vessel for a time between 1 and 5 minutes. Effectiveness of cleaning was characterized using SEM, XPS and single frequency impedance measurements. Type II and III residues, which contained copper compounds were removed in CC/MA DES within five minutes through dissolution and subsequent complexation of copper by malonic acid. Removal of Type I PER required the addition of glacial acetic acid to the DES formulation. Single frequency impedance measurement appears to be a good in situ method to follow the removal of the residues. High water solubility of the components of the system in conjunction with their environmental friendly nature, make the DES an attractive alternative to SAF.

Resumo: O objetivo deste estudo foi avaliar o procedimento de hibridização imediata em restaurações indiretas de resina composta. A hipótese nula foi duplicada: os resultados dos adesivos de condicionamento total e auto-condicionante são similares; e a hibridização imediata produz microinfiltração e resistência adesiva similares à cimentação convencional. Foram selecionados 20 terceiros molares humanos recém extraídos e isentos de cárie, nos quais foram realizados preparos cavitários MOD, padronizados para restaurações indiretas. Os dentes foram divididos aleatoriamente em 4 grupos experimentais: (G1) hibridização com adesivo de condicionamento total (SB, Single Bond, 3M ESPE) imediatamente após o preparo cavitário e antes da cimentação, (G2) hibridização com adesivo de condicionamento total antes da cimentação (SB), (G3) hibridização com adesivo auto-condicionante (AP, Adper Prompt, 3M ESPE) imediatamente após o preparo cavitário e antes da cimentação, (G4) hibridização com adesivo auto-condicionante (AP) antes 157 da cimentação. Os espécimes foram restaurados com inlays de Targis (Ivoclar/Vivadent), cimentados com cimento resinoso Rely X ARC (3M ESPE). Todos produtos foram manipulados de acordo com as instruções do fabricante. Após termociclagem, os espécimes foram imersos em solução de nitrato de prata 50%, seccionados para avaliação da microinfiltração com escores pré-determinados de 0 a 3. Em seguida, os espécimes foram novamente seccionados com 0,8mm x 0,8mm para realização dos testes de microtração. Os resultados obtidos foram submetidos à análise estatística (p<0,05). Os escores da microinfiltração foram submetidos ao teste de Mann-Whitney indicando nenhuma diferença na técnica de hibridização (p>0,05). Os resultados da microtração foram submetidos à análise de variância que revelou... (Resumo completo, clicar acesso eletrônico abaixo). / Abstract: An analysis was carried out to determine the behavior of immediate hybridization on indirect composite resin restorations. The null hypothesis was two fold: were whether total etch or self-etch (SEA) adhesives result in similar; and whether immediate hybridization produces similar microleakage and æTBS than conventional cementation. Twenty sound extracted teeth were selected and 20 standardized MOD inlay preparations were made. The prepared teeth were randomly assigned in four experimental groups: (G1) hybridization with total-etch adhesive (SB, Single Bond, 3M ESPE) immediately after preparation and prior cementation, (G2) hybridization with total-etch adhesive prior cementation (SB), (G3) hybridization with SEA (AP, Adper Prompt, 3M ESPE) immediately after preparation and prior cementation; and (G4) hybridization with SEA (AP) prior cementation. The specimens were restored with Targis (Ivoclar/Vivadent) inlays, cemented with composite resin cement (RelyX ARC, 3M ESPE). All products were used according with manufacturer's instructions. The specimens were 160 thermocycled and immersed in 50%w/w silver nitrate. The specimens were sectioned and the microleakage evaluated with predetermined scores (0-3). Then, the specimens were sectioned in 0,8mm x 0,8mm and æTBS tested in a MTS-810 machine. The obtained data were submmited to statistical analysis (p< .05). The microleakage scores were submmited to Mann-Whitney non-parametric test showing no statistical differences among the adhesives and technique (p> .05). The æTBS results submitted to ANOVA parametric test reveled that G1 performed better than G2, and G3 superior to G4. The null hypotheses were partially rejected. None of the adhesives eliminate microleakage. Hybridization immediately after the preparation is done and before cementation improved the bond strengths with... (Complete abstract, click electronic address below). / Orientador: Sillas Luiz Lordelo Duarte Júnior / Coorientador: José Roberto Cury Saad / Banca: Welingtom Dinelli / Banca: Marcos Ribeiro Moysés / Mestre

Made available in DSpace on 2017-07-24T19:22:33Z (GMT). No. of bitstreams: 1 Tese Miguel Munoz Doutorado Odontologia 2014.pdf: 3888005 bytes, checksum: 9a25e76295a44d9cdb11d6afb38c9041 (MD5) Previous issue date: 2014-02-07 / Fundação Araucária de Apoio ao Desenvolvimento Científico e Tecnológico do Paraná / The aim of the present study was to make an in vitro evaluation of the properties and stability of the bond to dentin of new universal adhesive systems applied according to the etch-and-rinse (ER) and self-etching (SE) adhesive strategies. The specific objectives for each of the three studies were: To evaluate the microtensile bond strength (RU), nanoleakage (NI) and degree of conversion (DC) in the time intervals of 24 h (Experiment 1) and six months (Experiment 2) of the universal adhesive systems applied in accordance with the manufacturers’ recommendations for strategies ER and SE; and the effect of an additional hydrophobic layer (Experiment 3, in the immediate time interval) on these same properties. The occlusal surfaces of 140 third molars were flattened until dentin was obtained, and then the teeth were randomly allocated to 28 groups (n=5). In Experiments 1 and 2, 40 teeth were divided into eight groups according to the adhesive used (Peak Universal [Pk], Scotchbond Universal [Sc], Allbond Universal [Al]) and adhesive strategy (ER and SE), with the ER adhesive system Adper Single Bond 2 (SB) and self-etching Clearfil SE Bond (CSE) used as controls. For Experiment 3, 60 teeth were divided into 12 groups according to the adhesive (Sc, Al, G-Bond Plus [Gbp]), adhesive strategy (ER and SE) and with or without hydrophobic layer (Heliobond, HE). After application of the variables adhesives and restorative procedure, the teeth were stored in distilled water (37oC/24 h) and cut to obtain dentin-resin sticks (0.8 mm2 cross-section) which were submitted to the RU and NI tests in the following time intervals: immediate (Experiments 1 and 3) and six months (Experiment 2); and analysis of DC in the immediate time interval. The data of Experiment 1 were submitted to one-way analysis of variance (Adhesive Strategy) and those of Experiments 2 and 3, to twoway analysis of variance (Adhesive strategy vs. Time intervals; and Adhesive strategy vs. Hydrophobic layer) respectively. The analyses were complemented by the Tukey Test (α=0.05). The RU results obtained in Experiment 1 demonstrated that only PkEr and PkSe were similar to the respective control groups (p>0.05); that the other universal materials resulted in lower RU means than those of their controls ER and SE (p<0.05) and that AlSe presented the lowest mean RU values (p<0.05). For NI, the Groups ScEr, ScSe, AlSe, and AlEr presented low levels of NI similar to those of the control groups (p<0.05). For DC, only Group ScSe demonstrated low DC when compared with the other materials (p<0.05). According to the results of Experiment 2, the systems Pk and AlEr presented a reduction in RU (p<0.05) and only Pk underwent significant degradation (NI) after six months (p<0.05). According to Experiment 3, Al and Gbp obtained higher RU results with the ER strategy (p<0.05); the use of HE increased the RU only in strategy SE (p<0.05); a low level of NI was observed only in Groups Sc and Al with the CON+HE strategy and in Group Gbp with SE+HE; Groups Sc and Gbp presented a high DC when used with the ER strategy, which was increased with the application of HE (p<0.05). The DC if Al was similar under all the conditions. From the three experiments of which this study was composed, it could be concluded that: 1) the universal adhesives presented a 13 material-dependent behavior in both strategies (ER and SE) and were inferior, in at least one of the properties evaluated (RU, Nl or DC), when compared with the control adhesives (CSE and SB); 2) In general, after six months the adhesives SE maintained the most stable RU and NI values, which appears to be related mainly to their capacity to form a chemical bond to dental substrate; 3) The use of a hydrophobic layer in strategy SE was able to increase the RU and DC of universal adhesives and the reduction in NI was more dependent on the composition of the adhesive than on the adhesive strategy. / O objetivo do presente trabalho foi avaliar in vitro as propriedades e longevidade da união à dentina dos novos sistemas adesivos universais aplicados segundo as estratégias adesivas convencional (CON) e autocondicionante (AC). Os objetivos específicos para cada um dos três estudos foram: avaliar a resistência de união à microtração (RU), a nanoinfiltração (NI) e o grau de conversão (GC) no tempo imediato - 24 h - experimento 1) e seis meses (Experimento 2) dos sistemas adesivos universais para as estratégias CON e AC; e o efeito de uma camada hidrofóbica adicional (Experimento 3, no tempo imediato) sobre essas mesmas propriedades. Cento e quarenta terceiros molares foram planificados na face oclusal até se obter dentina e alocados aleatoriamente em 28 grupos (n=5). Nos Experimentos 1 e 2, 40 dentes foram divididos em oito grupos de acordo com o adesivo (Peak Universal [Pk], Scotchbond Universal [Sc], Allbond Universal [Al]) e estratégia adesiva (CON e AC) tendo como controle, o sistema adesivo convencional Adper Single Bond 2 (SB) e o autocondicionante Clearfil SE Bond (CSE). Para o Experimento 3, 60 dentes foram divididos em 12 grupos de acordo com o adesivo (Sc, Al, G-Bond Plus [Gbp]), estratégia adesiva (CON e AC) e com a presença ou não de camada hidrofóbica (Heliobond, HE). Após aplicação das variáveis adesivas e do procedimento restaurador, os dentes foram armazenados em água destilada (37oC/24 h) e cortados para obter palitos de dentina-resina (0,8 mm2 de secção transversal) sendo submetidos aos teste de RU e NI nos tempos imediato (Experimentos 1 e 3) e também seis meses (Experimento 2); e análise de GC no tempo imediato. Os dados do Experimento 1 foram submetidos à análise de variância de um fator (Estratégia Adesiva) e os dos Experimentos 2 e 3, à de dois fatores (Estratégia adesiva versus Tempos de análise; e Estratégia adesiva versus Camada hidrofóbica), respectivamente. As análises foram complementadas pelo teste de Tukey (α=0,05). Os resultados de RU obtidos no Experimento 1 demonstraram que apenas PkCon e PkAc foram similares aos respectivos grupos controle (p>0,05), que os outros materiais universais resultaram em médias de RU inferiores aos seus controles CON e AC (p<0,05) e que AlAc apresentou as médias mais baixas de RU (p<0,05). Para NI, ScCon, ScAc, AlAc, e AlCon apresentaram baixos níveis de NI similares aos grupos controle (p<0,05). Para GC, unicamente ScAc demostrou baixo GC, quando comparado com os outros materiais (p<0.05). Segundo os resultados do Experimento 2, os sistemas Pk e AlCon apresentaram diminuição da RU (p<0,05) e apenas Pk teve degradação significativa (NI) após seis meses (p<0,05). De acordo com o Experimento 3, Al e Gbp obtiveram maiores resultados de RU na estratégia CON (p<0,05); o uso de HE aumentou a RU unicamente na estratégia AC (p<0,05); baixa NI foi observada somente em Sc e Al na estratégia CON+HE e em Gbp em AC+HE; Sc e Gbp apresentaram alto GC quando usados em estratégia CON, que foi aumentado com a aplicação de HE (p<0,05). O GC de Al foi similar em todas as condições. A partir dos três experimentos que compõem o presente trabalho, pôdese concluir que: 1) os adesivos universais apresentaram um comportamento 11 dependente do material em ambas estratégias (CON e AC) e foram inferiores, pelo menos em uma das propriedades avaliadas (RU, Nl ou GC), quando comparados aos adesivos controle (CSE e SB); 2) Em geral, após seis meses os adesivos AC mantém mais estáveis os valores de RU e NI, o que parece estar relacionado principalmente à sua capacidade de união química ao substrato dental; 3) A utilização de uma camada hidrofóbica na estratégia AC pôde aumentar a RU e o GC de adesivos universais e a redução da NI foi mais dependente da composição do adesivo do que da estratégia adesiva.

Depuis le début de la microélectronique, l’industrie a développé sans arrêt des nouvelles technologies de gravure plasma pour diminuer la taille des dispositifs tout en réduisant le cout de fabrication et en augmentent les performances des circuits intégrés. Aujourd’hui, les transistors tel que le FDSOI 22nm ou FinFET 10 nm doivent être gravé avec une précision sub-nanométrique et sans endommager la sous-couche sur plus d’une couche atomique. Pour arriver à faire cela, de nouvelles technologie se développent, dont le Smart Etch. Cette technologie en deux étapes consiste à modifier la surface du matériau sous l’action d’un plasma, puis à retirer ce matériau modifié sélectivement par rapport au matériau non modifié. Le but de cette thèse est d’étudier la faisabilité de remplacer les plasmas de He et H2 utilisé dans le Smart Etch par des plasmas d’O2. L’intérêt est l’oxydation du matériau est une réelle modification chimique, permettant l’élimination sélective de ce dernier en RPS. Par ailleurs, contrairement aux plasma de He/H2, le plasma de O2 ne grave pas les parois du réacteur et rejette beaucoup moins d’impuretés dans le plasma. Dans un premier temps, nous avons étudié les mélanges gazeux NF3/H2 et NF3/NH3 utilisés dans l’étape de retrait RPS. Ces études ont été fait grâce à la spectroscopie d’absorption VUV et d’émission UV. Nous avons mis en évidence la création de HF dans les deux mélanges et nous avons mis en avant de manière indirecte la création de NH4F (cette espèce jouant un rôle clé dans la formation des sels) à partir de NH3 et HF. De plus nous avons observé la présence de F et H qui sont responsable de la gravure de SiO2 et SiN lorsque H2<NF3 et NH3<NF3. Dans un second temps, nous avons étudié par XPS angulaire et ellipsométrie l’implantation des ions oxygène dans du SiN avec différent flux et énergie ionique. Cela a bien montré que le SiN initial est transformé en une couche SiOxNy avec une contribution SiO2 importante, sous réserve que l’état stationnaire soit atteint (il faut une dose d’ions significative pour cela). Le flux, l’énergie des ions et le temps de traitement sont donc les paramètres clés pour le contrôle de la couche modifié. Enfin, des tests préliminaires de gravure cyclique de SiN pleine plaque en mode « ALE » (c’est dire monocouche atomique par monocouche atomique) ainsi qu’en mode standard (retrait de quelques nanomètres / cycle) montrent que le principe de gravure est réaliste. Ce travail ouvre donc la voie au développement de ce nouveau type de procédé. / Since the beginning of microelectronics, the industry has continuously developed new plasma etching technologies to reduce the size of devices while reducing the cost of manufacturing and increase the performance of integrated circuits. Today, transistors such as 22nm FDSOI or 10nm FinFET must be engraved with sub-nanometric precision and without damaging the underlayment on more than one atomic layer. To achieve this, new technologies are developing, including the Smart Etch. This two-step technology involves modifying the surface of the material under the action of a plasma and then removing selectively the modified material from the unmodified material. The aim of this thesis is to study the feasibility of replacing the He and H2 plasmas used in the Smart Etch by O2 plasmas. The interest is the oxidation of the material, that it is a real chemical modification, allowing latter the selective elimination by RPS. Moreover, unlike He / H2 plasma, the O2 plasma does not damage the reactor walls and releases much less impurities into the plasma. Firstly, we studied the gaseous mixtures NF3 / H2 and NF3 / NH3 used in the step of RPS remove. Thouse studies were done through VUV absorption spectroscopy and UV emission. We have demonstrated the creation of HF in both mixtures and we have indirectly highlighted the creation of NH4F (this species plays a key role in the formation of salts) from NH3 and HF. In addition we observed the presence of F and H which are responsible for the etching of SiO2 and SiN when H2 <NF3 and NH3 <NF3. Secondly, we studied angular XPS and ellipsometry by implanting oxygen ions in SiN with different flux and ionic energy. This has shown that the initial SiN is transformed into a SiOxNy layer with a significant SiO2 contribution, provided that the stationary state is reached (a significant dose of ions is required for this). Flux, ion energy and processing time are therefore the key parameters for controlling the modified layer.Finally, preliminary tests of full-plate SiN cyclic etching in "ALE" mode (ie atomic monolayer by atomic monolayer) as well as in standard mode (removing a few nanometers / cycle) show that the etching principle is realistic. This work opens the way to the development of this new type of process.

As the miniaturization of functional devices in integrated circuit (IC) continues to scale down to sub-nanometer size, the process complexity increases and makes materials characterization difficult. One of our research effort demonstrates the development and application of novel Multiple Internal Reflection Infrared Spectroscopy (MIR-IR) as a sensitive (sub-5 nm) metrology tool to provide precise chemical bonding information that can effectively guide through the development of more efficient process control. In this work, we investigated the chemical bonding structure of thin fluorocarbon polymer films deposited on low-k dielectric nanostructures, using Fourier transform infrared spectroscopy (FTIR), X-ray photoelectron spectroscopy (XPS) and scanning electron microscopy (SEM). Complemented by functional group specific chemical derivatization reactions, fluorocarbon film was established to contain fluorinated alkenes and carbonyl moieties embedded in a highly cross-linked, branched fluorocarbon structure and a model bonding structure was proposed for the first time. In addition, plasma induced damage to high aspect ratio trench low-k structures especially on the trench sidewalls was evaluated both qualitatively and quantitatively. Damage from different plasma processing was correlated with Si-OH formation and breakage of Si-CH3 bonds with increase in C=O functionality. In another endeavor, TiN hard mask defect formation after fluorocarbon plasma etch was characterized and investigated. Finding suggest the presence of water soluble amines that could possibly trigger the formation of TiN surface defect. An effective post etch treatment (PET) methods were applied for etch residue defect removal/suppression.

Plasma induced damage of ultra low-k (ULK) dielectrics is a common phenomenon in BEOL interconnects. The damage leads to an increase in k-value, which raises the RC delay, leading to increased power consumption and cross talk noise. Therefore, diverse repair and post etch treatments (PET) have been proposed to restore or reduce the ULK damage. However, current repair processes are usually based on non-plasma silylation, which suffers from limited chemistry diffusion into the ULK. Moreover, the conventional PET based on anisotropic plasma results in bottom vs. sidewall inhomogeneities of the structures (e.g. via and trench). To reduce these drawbacks, an organosilane downstream -plasma (DSP) was applied. This new application resulted in an increased resistance to ULK removal by fluorinated wet clean chemistries, preserving the ULK hydrophobicity, keeping its carbon content relatively high. The effective RC measured on 28 nm node patterned wafers treated with a DSP PET remains nevertheless comparable to the process of record (POR).

Lower k and low-leakage silicon carbonitride (SiCxNy ) films were fabricated using single precursor by using radio-frequency (RF) plasma-enhanced chemical vapor deposition (PECVD). We explored precursors with (1) cyclic-carbon-containing structures, (2) higher C/Si ratio, (3) multiple vinyl groups, as well as (4) the incorporation of porogen for developing low-k SiCxNy films as etch-stop/diffusion barrier (ES/DB) layer for copper interconnects in this study. SiCxNy films with k values between 3.0 and 3.5 were fabricated at T≦ 200 o C, and k~4.0-4.5 at 300-400 °C. Precursors with vinyl groups yielded SiCxNy films with low leakage, excellent optical transmittance and high mechanical strength due to the formation of cross-linked Si-(CH2)n-Si linkages.

Self-etching primers (SEP) have recently simplified the orthodontic bonding process and questions have arisen regarding their reliability and efficiency. The goal of this study was to assess the importance of a pumice prophylaxis prior to bonding with SEP (Transbond Plus, 3M Unitek, Monrovia, CA) in reducing bond failures. Thirty orthodontic patients volunteered to participate in this split-mouth prospective clinical trial. A pumice prophylaxis experimental group and a non-pumice control group of teeth were randomly assigned in a contralateral quadrant pattern within each patient. A total of 508 teeth were bonded and monitored over 3 months for bond failures. There were 35 total failures (6.9%) with 6 (2.4%) in the pumice group and 29 (11.4%) in the non-pumice group. Bond failures were compared as a total number between groups and also as the number of patients who experienced bond failures with each method using Chi-square analysis. There were statistically significant differences both in the total number of bond failures (P < .001) and in the number of patients with bond failures between groups (P < .01). A significantly lower and clinically acceptable bond failure rate was demonstrated when using Transbond Plus SEP after pumice prophylaxis. This study produced strong evidence to suggest the need for pumice prophylaxis in orthodontic bonding when using SEP.

Purpose: This in vitro study evaluated the effectiveness of using a 37% phosphoric acid liquid etchant along with MI Paste Plus™ powered technology compared to using MI Paste Plus™ alone or to an artificially created saliva solution in decreasing the demineralization and enhancing the remineralization of artificial carious lesions created on extracted human teeth. The teeth were analyzed and compared using polarized light microscopy, quantitative light-induced fluorescence, and digital photography. Materials and Methods: One hundred three recently extracted non-carious human third molar teeth without observable white-spot lesions, decalcification, or dental fluorosis were selected for this twelve day study and randomly divided into four treatment groups as follows: Group 1 (Control) - Artificial saliva solution (27 teeth) Group 2 (MIP) - MI Paste Plus™ application for 30 minutes daily for 12 days (26 teeth) Group 3 (15MIP) - 15 second etch every third day and MI Paste Plus™ application for 30 minutes daily for 12 days (25 teeth) Group 4 (1MIP) - 1 minute etch on day one ONLY and application of MI Paste Plus™ for 30 minutes daily for 12 days (25 teeth). Results: Results of one<–>way ANOVA revealed there was a significant effect for the type of treatment on the lesion depth (p = 0.0027). The post-hoc Tukey-Kramer's test indicated there was a statistically significant difference between the two groups (15MIP and 1MIP) that incorporated an acid etch in combination with MI Paste Plus™ and the group with exposure to MI Paste Plus™ alone (MIP). In addition, results of one<–>way ANOVA showed that there was no statistically significant effect for type of treatment on the change in fluorescence (p = 0.1417) or the change in density (p = 0.1934). Conclusions: The results of the present study revealed there was a significant effect for the type of treatment on the lesion depth (p = 0.0027). However, the only significant difference found was between the two groups (15MIP and 1MIP) that incorporated an acid etch in combination with MI Paste Plus™ and the group with exposure to MI Paste Plus™ alone (MIP). Thus, daily applications of MI Paste Plus™, with or without an acid etch, did not produce a statistically significant difference in mean lesion depth when compared to the control (artificial saliva group). In addition, the results of the present study showed that there was no statistically significant effect for type of treatment on the change in fluorescence (p = 0.1417) or the change in density (p = 0.1934). Further research is needed to evaluate MI Paste Plus™ capability in prevention of demineralization and/or enhancement of remineralization by conducting randomized clinical trials.

In the context of transistor size miniaturization the motivation of this work was focused on the fabrication process of planar double gate devices. We proposed in this work three process flows based on the use of buried mask which could allow the fabrication of self-aligned planar double gate transistors. The novel concept of buried mask consists into modifying the etch rate of a buried polysilicon or oxide layer. This etch rate modification being defined by ion implantation, etch stop or scacrificial zones aligned with the implantation mask can thus be fabricated. This technique solve the alignment of the front and back gate. Ion implantation causes damages to the implanted target, and is used to dope semiconductor material. If the implanted atoms have a small radii they can induce stress to the implanted lattice. These three consequences of ion implantation, damage, doping and stress are used to modify the etch rate of oxide and polysilicon. High etching selectivity are reached, which allow the fabrication of a localized buried sacrificial or etch stop zone, called buried mask. The definition of the buried mask being done by ion implantation, it opens the possibility to fabricate a buried mask aligned with the implantation mask. Although some more work has to be invested to fabricate planar double gate MOS using buried mask in polysilicon, this concept of buried mask, which could also be called anisotropic wet and vapor etching, is foreseen as a very promising technique in MEMS micromachining and for bio sensor applications.