The main objective of this industrially important work was to gain an increasing understanding of the properties of some industrially important materials such as CMSX-4 nickel base super alloy, 90Ti.6Al.4V alloy, 25Cr:6Ni stainless steel, 0.7% carbon steel, AISI 304 stainless steel-alumina composites, mould powder used in continuous casting of steel as well as coke used in blast furnace with special reference to the thermal diffusivities. The measurements were carried out in a wide temperature range covering solid, liquid, glassy and crystalline states. For CMSX-4 alloy, the thermal conductivities were calculated from the experimental thermal diffusivities. Both the diffusivities and conductivities were found to increase with increasing temperature. Microscopic analysis showed the presence of intermetallic phases γ´ such as Ni3Al below 1253 K. In this region, the mean free path of the electrons and phonons is likely to be limited by scattering against lattice defects. Between 1253 K and solidus temperature, these phases dissolved in the alloy adding to the impurities in the matrix, which, in turn, caused a decrease in the thermal diffusivity. This effect was confirmed by annealing the samples at 1573 K. The thermal diffusivities of the annealed samples measured at 1277, 1403 and 1531 K were found to be lower than the thermal diffusivities of non-annealed samples and the values did not show any noticeable change with time. It could be related to the attainment of equilibrium with the completion of the dissolution of γ´ phase during the annealing process. Liquid CMSX-4 does not show any change of thermal diffusivity with temperature. It may be attributed to the decrease of the mean free path being shorter than characteristic distance between two neighbouring atoms. Same tendency could be observed in the case of 90Ti.6Al.4V alloy. Since the thermal diffusivity increases with increasing temperature below 1225 K and shows slight decrease or constancy at higher temperature. For 25Cr:6Ni stainless steel, the thermal diffusivity is nearly constant up to about 700 K. Beyond that, there is an increase with temperature both during heating as well as cooling cycle. On the other hand, the slope of the curve increases above 950 K, which can be due to the increase of bcc phase in the structure. 0.7% carbon steel shows a decrease in the thermal diffusivity at temperature below Curie point, where the structure contains bcc+ fcc phases. Above this point the thermal diffusivity increases, where the structure contains only fcc phase. The experimental thermal conductivity values of these alloys show good agreement with the calculated values using Mills model. Thermal diffusivity measurements as a function of temperature of sintered AISI 304 stainless steel-alumina composites having various composition, viz, 0.001, 0.01, 0.1, 1, 2, 3, 5, 7, 8 and 10 wt% Al2O3 were carried out in the present work. The thermal diffusivity as well as the thermal conductivity were found to increase with temperature for all composite specimens. The thermal diffusivity/conductivity decreases with increasing weight fraction of alumina in the composites. The experimental results are in good agreement with simple rule of mixture, Eucken equation and developed Ohm´s law model at weight fraction of alumina below 5 wt%. Beyond this, the thermal diffusivity/ conductivity exhibits a high discrepancy probably due to the agglomeration of alumina particles during cold pressing and sintering. On the other hand, thermal diffusivities of industrial mould flux having glassy and crystalline states decrease with increasing temperature at lower temperature and are constant at higher temperature except for one glassy sample. The thermal diffusivity is increased with increasing crystallisation degree of mould flux, which is expected from theoretical considerations. Analogously, the thermal diffusivity measurements of mould flux do not show any significant change with temperature in liquid state. It is likely to be due to the silicate network being largely broken down. In the case of coke, the sample taken from deeper level of the pilot blast furnace is found to have larger thermal diffusivity. This can be correlated to the average crystallite size along the structural c-axis, Lc, which is indicative of the higher degree of graphitisation. This was also confirmed by XRD measurements of the different coke samples. The degree of graphitisation was found to increase with increasing temperature. Further, XRD and heat capacity measurements of coke samples taken from different levels in the shaft of the pilot blast furnace show that the graphitisation of coke was instantaneous between 973 and 1473 K. / QC 20100629

(¤@) Pyrolysis of 1,2-bis(3-methoxy-2-naphthyl)ethene (35) gave polycyclic aromatic hydrocarbons (PAH) 42¡B43¡B44 and 45. In addition, photolysis of 35 gave photocyclic products 50. (¤G) Photolysis of £\-azidotoluene (35) and 2-azido1-(2-furanyl)ethanone(45) gave dimer products benzylbenzene (51)¡B2-(furan-2-carbon-yl)-amino-1-(2-furyl)ethan-one (60) and 2-(2-formylfuranyl)-4-(2-furan-yl)-imidazole (48).

Flash memories have become the main type of non-volatile memories. They are widely used in mobile, embedded and mass-storage devices. Flash memories store data in floating-gate cells, where the amount of charge stored in cells – called cell levels – is used to represent data. To reduce the level of any cell, a whole cell block (about 106 cells) must be erased together and then reprogrammed. This operation, called block erasure, is very costly and brings significant challenges to cell programming and rewriting of data. To address these challenges, rank modulation and rewriting codes have been proposed for reliably storing and modifying data. However, for these new schemes, many problems still remain open. In this work, we study error-correcting rank-modulation codes and rewriting codes for flash memories. For the rank modulation scheme, we study a family of one- error-correcting codes, and present efficient encoding and decoding algorithms. For rewriting, we study a family of linear write-once memory (WOM) codes, and present an effective algorithm for rewriting using the codes. We analyze the performance of our solutions for both schemes.

Nuclear fuel comes in many forms; oxide fuel is the most commonly used in current reactor systems while metal fuel is a promising fuel type for future reactors due to neutronic performance and increased thermal conductivity. As a key heat transfer parameter, thermal conductivity describes the heat transport properties of a material based upon the density, specific heat, and thermal diffusivity. A material’s ability to transport thermal energy through its structure is a measurable property known as thermal diffusivity; the units for thermal diffusivity are given in area per unit time (e.g., m2/s). Current measurement methods for thermal diffusivity include LASER (or light) Flash Analysis and the hot-wire method. This study examines an approach that combines these previous two methods to characterize the diffusivity of a packed bed of microspheres of depleted uranium (DU) metal, which have a nominal diameter of 250 micrometers. The new apparatus is designated as the Crucible Heater Test Assembly (CHTA), and it induces a radial transient across a packed sample of microspheres then monitors the temperature profile using an array of thermocouples located at different distances from the source of the thermal transient. From the thermocouple data and an accurate time log, the thermal diffusivity of the sample may be calculated. Results indicate that DU microspheres have very low thermal conductivity, relative to solid uranium metal, and rapidly form an oxidation layer. At 500°C, the thermal conductivity of the DU microspheres was 0.431 ± 13% W/m-K compared to approximately 32 W/m-K for solid uranium metal. Characterization of the developed apparatus revealed a method that may be useful for measuring the thermal diffusivity of powders and liquids.

More and more embedded systems choose ARM-based micro-controllers as CPU. If no embedded OS built with the system, the application scope will be restricted. Therefore, the need of embedded OS is vital. There are many embedded OS¡¦s in the market, but the embedded Linux has many advantages and is widely accepted. Commercial embedded Linux takes less refund than other embedded OS¡¦s. The kernel and most applications are distributed in GPL open source copyright, and is highly portable to many machine platforms. Presently, the hardware key-technology is highly skilled. The margin of 3C industrial has gone down rapidly. Therefore, people focus on adapting integrated technology to practicality and innovation to make cost down. Developers choose appropriate ARM micro-controllers according to demanding functionality of their products. The microcontroller is not necessary running with Linux distribution. Two approaches can be used to resolve the embedded OS issue. The first approach is porting Linux to the platform without any refund. The second approach is to pay for commercial Linux. Embedded system peripheral devices aim at powerful functionalities and economy. For instance, UART interface is cheap and low data transfer rate. The target board communicates with host via RS-232. RS-232 acts as serial console to play dumb terminal under Linux. Industrial applications often make use of RS-xxx for UART physical transmission layer. For instance, RS-485 applies modbus protocol to build cheap monitor systems. Network transmission is a necessary function, and it generally achieves high data transfer rate application through Ethernet. The UNIX-like network socket has served network application very well. Embedded systems are usually diskless systems. In order to keep permanent data, using flash memory as block disk system is a widely adapted strategy and which operates flash memory through MTD subsystems¡][28]¡^. An MTD subsystem contains two different modules, ¡§user¡¨and ¡§driver¡¨. In the driver module, CFI¡][40]¡^ is applied to probe flash chip, partition it and provide operating function. Flash translation layer and file-system are applied in the user module. MTD BLOCK is used to emulate the flash partitions as block devices which are then mounted into Linux virtual file system¡]VFS¡^with JFFS2 type, designed according to the feature of flash devices. In this thesis, we will describe in detail the procedure of porting Linux to ARM micro-controllers. The motivation of the work is introduced in chapter 1. In chapter 2, we introduce development tools and the main flow of the porting procedure. In chapter 3, we describe the LH79525 platform and the main perepherals on the target board, then introduce the ARM programmer model. In chapter 4, we examine the required knowledge and the important issues for porting ARM Linux. In chapter 5, we describe the details of porting Linux to run with Sharp LH79525, including modifying the key source codes and adjusting kernel configuration for embedding the UART, ethernet MAC, and MTD subsystem. In chapter 6, we do step-by-step validation and apply an integrated application with the LF-314CP temperature controller¡][46]¡^ by law-chain technology for the LH79525 target board running with the ported ARM Linux. In chapter 7, we present some issues for future work and improvement, then make a conclusion for the thesis.

In this study, flash memory cells with high-k dielectric HfO2 as tunnel oxide and group IV (Si, Ge) nanocrystals were fabricated and tested. The device structure was grown by magnetron sputtering deposition method and analyzed by various diagnostic techniques such as X-ray Photoelectron Spectroscopy (XPS) and Raman spectroscopy. The use of HfO2 tunnel oxide dielectric with high permittivity constant was one of the main purposes of this study. The ultimate aim was to investigate the use of Si and Ge nanocrystals together with HfO2 tunnel oxide in the memory elements. Interface structure of the fabricated devices was studied by XPS spectroscopy. A depth profile analysis was performed with XPS. Nanocrystal formations were verified using Raman spectroscopy technique. The final part of the study includes electrical characterization of memory devices fabricated using Si and Ge floating gate. C-V (Capacitance Voltage) and G-V (Conductance-Voltage) measurements and charge storage behaviour based on C-V measurements were performed. For comparison, structure of Si and Ge layers either in thin film or in the nanocrystal form were studied. A comparison of the C-V characteristics of these two structures revealed that the memory device with thin films do not confine charge carriers under the gate electrode as should be expected for a continuous film. On the other hand, the device with nanocrystals exhibited better memory behavior as a result of better confinement in the isolated nanocrystals. Trace amount of oxygen was found to be enough to oxidize Ge nanocrystals as confirmed by the Raman measurements. The charge storage capability is weakened in these samples as a result of Ge oxidation. In general, this work has demonstrated that high-k dielectric HfO2 and group IV nanocrystals can be used in the new generation MOS based memory elements. The operation of the memory elements are highly dependent on the material and device structures, which are determined by the process conditions.

Radical reactions play central roles in regulating regional air quality and global climate. Some potentially important gas phase radical reactions are being investigated in this research project, including Cl reactions with acetone, butanone, 3-pentanone, pyridine, and dimethyl selenide (DMSe), HO2 complex formation and dissociation with formic and acetic acids, and reactive and non-reactive quenching of O(1D) by the potent greenhouse gases SO2F2, NF3, and SF5CF3. The involved radicals are generated by laser flash photolysis (LFP). Temporal profiles of either the radical reactant or a product are monitored in "real time" using atomic resonance fluorescence spectroscopy (RF), time-resolved UV-visible absorption spectroscopy (TRUVVAS), or tunable diode laser absorption spectroscopy (TDLAS), allowing kinetic and mechanistic information of these reactions to be obtained. These studies provide new knowledge of the investigated radical reactions and facilitate a better understanding of their significance in atmospheric chemistry.

Les travaux présentés dans cette Habilitation à Diriger des Recherches ont eu comme point de départ le développement, l'étude et l'utilisation de systèmes de décharges H.T. impulsionnelles. Ils ont porté sur différents sujets liés aux plasmas hors équilibre thermodynamique (essentiellement à pression atmosphérique) et à leurs applications dans des domaines aussi variés que la biologie, l'environnement ou l'énergétique.<br />Le spectre des thèmes abordés est assez large et regroupe les études sur :<br /> la cinétique réactionnelle du milieu actif du laser à excimère XeCl,<br /> le développement de sources flash de rayonnement X,<br /> les différents continua d'excimères de gaz rares à très haute pression (30 bars) excités par flash de rayonnement X,<br /> la réduction des oxydes d'azote (deNOx) par association plasma-catalyse et oxydation des Composés Organiques Volatils (deCOV),<br /> la production de gaz de synthèse et d'hydrogène à partir d'hydrocarbures, l'aide à la combustion des moteurs automobiles, et l'initiation de la réaction dite de "Water Gas Shift" pour la réduction du monoxyde de carbone par décharge à barrière diélectrique.

記憶體是半導體產品之一，其規格及運用皆已標準化，沒有很大的差異性，價格受到供需的影響，因時因地而各不相同。由於，記憶體供應來源只局限少數幾家廠商，交易金額往往是百萬美元計，任何價格的變動都會影響企業營收，但是對記憶體模組業者而言，價格變動是常態，比其他的零組件波動性更強。在沒有進入障礙、價格波動、沒有龐大設廠資金及技術涉入下，記憶體模組業者，如何以更有效率的模式經營企業，以取得世界市場一席之地。 記憶體模組業者除了提供Memory Module外，現也經營Flash產品。這是因為Flash 產品的零件來源、組裝及通路與Memory Module有類似共通性，但Flash產品才崛起數年，而市場成長高於Memory Module，吸引許多非記憶體模組業者進入該市場，這其中包括國際性大廠，對現有的記憶體模組業者，如何以記憶體模組的經營模式，複製於Flash產品是另外一個課題。 本研究是探討記憶體模組業者，在記憶體模組及Flash 產品的經營模式，分別從其與供應商之關係、自有能力調整及與通路商之配合方式著手。此方式可以一窺記憶體模組業者，實際的經營方式與其他資訊硬體廠商大不相同，也構成外人無法知悉的進入障礙。 藉由廠商訪談，可以瞭解業者對記憶體模組及Flash產品運作的方式，最後本研究對記憶體模組業者提出二項建議：分別為面對變動環境下，應具備有的經營策略；如何強化自有的能力以面對未來的競爭。 / Memory, one of the semiconductor products, is a homogeneous product in terms of specification and application. Its prices are subject to the market - the supply and the demand at a certain time and place. The memory world is dominated by a limited number of makers, and one transaction usually amounts to millions of US dollars. A slight change in market price, therefore, would result in a noticeable number on the bottom line. However, to the memory module makers, price fluctuation is normal, though it is much more volatile than any other components. This study intends to explore how memory module makers can play a key role in the global market by getting more efficient under the premises that there are no entry barrier, price fluctuation, nor huge capital investment and high-tech involvement required. Memory modules players also carry flash products for these two products having similarity in their component source, assembly and marketing channel. The flash product, which appeared to the market just a few years ago, is a high-growth product and thus attractive to a herd of non-memory module makers, including international giants. How to apply the memory module business model to the flash product is a key subject for the existing memory module players. This study is aimed to discuss the business models used by memory module players to the memory modules and to the flash products. Relationship with suppliers, self adjustability and distributorship are separately explored herein. The finding is module players are actually running the business in a way greatly different from other hardware players and such difference in fact poses an entry barrier to the outsiders. Interviews with the industry players were conducted to gain insights to the business approaches being taken. At the end of this study, two suggestions are forwarded: the must-have business strategies in the ever-changing environment and the competitiveness for future challenges.

In the past years solid state disks have developed drastically and are now gaining increased popularity compared to conventional hard drives. While hard disk drives work predictable, transparent SSD routines work in the background without the user’s knowledge. This work describes the changes to the everyday life for forensic specialists; a forensic investigation includes data recovery and the gathering of a digital image of each acquired memory that provides proof of integrity through a checksum. Due to the internal routines, which cannot be stopped, checksums are falsified. Therefore the images cannot prove integrity of evidence anymore. The report proves the inconsistence of checksums of SSD and shows the differences in data recovery through high recovery rates on hard disk drives while SSD drives scored no recovery or very poor rates.