Physical systems having dimensions smaller than, or of the same order of magnitude as, the characteristic length scale relevant to a physical property are referred to as mesoscopic physical systems. Due to the dimensions of the system, several physical properties get affected and this could reveal interesting physics which would other-wise have not been apparent. In the recent times, a lot interesting applications have resulted from such studies. The fundamental length scale in ferromagnetic systems is the exchange length. It is related to the magnetic anisotropy and exchange constants. Other length scales such as the size of a magnetic domain or a domain wall depends on the minimisation of energy associated with this length scale along with other factors such as zeeman energy, magnetostatic, magnetoelastic and anisotropy energies. Ultrathin magnetic films have thickness smaller than the exchange length. In this thickness regime, the surface of the film plays an important role. The magnetic anisotropy energy would get a significant contribution from the surface of the film and if it dominates over the volume contribution, would eventually lead to magnetisation pointing out of the plane of the film as opposed to imposition of demagnetising fields. Examples for such cases are FePt(L10 phase) films and Co(0001) films. Such films are important in memory applications where perpendicularly magnetised recording media are desired. When the lateral dimensions of thin films are reduced, demagnetising fields become even more important. Depending on the anisotropy in the system, certain domain patterns get stabilised in the final structure. This has led to important applications in the field of magnonics. The use of angular momentum transfer from spin polarised electrons to change the configuration of magnetisation of structured magnetic films has led to interesting memory and oscillator applications. The underlying physical parameter that needs to be controlled and carefully studied in all these cases is the magnetic anisotropy. It is favourable to have uniaxial magnetic anisotropy for memory and oscillators. This thesis chiefly deals with Fe/GaAs(001) systems. The choice of the physical system follows interest in spintronics where spin injection is desired into a semiconductor from a ferromagnet. The thesis is organized into chapters as follows. Chapter 1 attempts to introduce the reader to some of the basic concepts of mag-netism and some magnetic phenomena. The characteristic nature of a ferro-magnetic material is its spontaneous magnetisation due to long range ordering below the Curie temperature. But the moment is coupled, through some in-teractions, to spatial co-ordinates which leads to spatial variation of magnetic properties. Such interactions are also responsible for the formation of magnetic domains. The spatial variation of magnetic properties within a ferromagnet is called magnetic anisotropy. A major part of the thesis deals with the study of magnetic anisotropy of Fe thin films grown on GaAs(001) substrates. For a better understanding, the structure of the semiconductor is introduced first before discussing the influence of the structure of GaAs on the growth of Fe. A short description of the uniaxial magnetic anisotropy in Fe films is given before starting on an exploration of some possible reasons for it. Concepts of ferromagnetic resonance, spin torque effect and micromagnetic simulations are given. Chapter 2 gives a brief description of some of the experimental apparatus that was setup during the course of the research along with an overview of the differ-ent sample preparation and characterisation techniques used. The chapter is organised according to the general functionality of the techniques. Some con-cepts such as the use of low energy electrons, nanostructuring etc are introduced along with the corresponding techniques since it is best understood along with the instrumentation. Chapter 3 reports some surprising findings about the in-plane magnetic anisotropy in Fe films grown on an MgO underlayer. Until now, it has been understood that such films should exhibit only a four-fold magnetic anisotropy within the plane of the film. But the Fe/MgO/GaAs(001) films studied here exhibited an in-plane uniaxial magnetic anisotropy(IPUMA). IPUMA is dominant upto about 25 ML of Fe in case of Fe/MgO/GaAs(001) films whereas, in Fe/GaAs(001) films it is dominant only upto about 15 ML. Thus, the presence of the MgO film even appeared to enhance the uniaxial anisotropy as compared to the Fe/GaAs(001) films. In the ferromagnetic resonance (FMR) spectra, as many as three peaks were observed in Fe/GaAs(001) films of thickness 50 ML close to the hard axis of magnetisation. This means that three could be three energy minima possibly due to a competition between the anisotropies involved. Chapter 4 elaborates the investigations of the effect of orientation and doping con-centration of the GaAs substrate on the magnetic anisotropy of Fe/GaAs(001) films. It is found that doping the substrate (n type) reduces the strength of the IPUMA in Fe/GaAs films. In the wake of the long-standing debate of electronic structure v/s stress as the origin of the IPUMA in Ferromagnet/Semiconductor films, this result is important because it implies that the electronic structure of the Fe/GaAs interface influences the magnetic anisotropy. But stress, as a cause of IPUMA cannot be ruled out. The influence of deposition techniques on magnetic anisotropy is also investigated. Chapter 5 presents a way of manipulating magnetic anisotropy, and hence mag-netisation dynamics, by nanostructuring of epitaxial Fe films. It is based on the property that magnetic anisotropy of Fe films is thickness dependent. It is demonstrated that using techniques of nanostructuring, a 2 dimensional mag-netic system with controllable variation of local magnetic anisotropy is created. Such a system could be a potential magnonic crystal. chapter 6 demonstrates the proof of concept of a new memory device where memory is stored in the magnetic domain configuration of a ring in relation to that of a nano-wire. Switching between the memory states is acheived through spin trasfer torque of an electric current passing through the device, whereas read-out of the memory state is through the measurement of resistance of the device. Devices are made using NiFe and Co; it is seen that the behaviour of the devices can be explained taking into account the anisotropic magnetoresistance of the material used. Finally, the various results are summarised and a broad outlook is given. Some possible future research related to the topics dealt within this thesis is discussed.

Polarization entangled photon pairs on demand are considered to be an important building block of quantum communication technology. It has been demonstrated that semiconductor quantum dots (QDs), which exhibit a certain spatial symmetry, can be used as a triggered, on-chip source of polarization entangled photon pairs. Due to limitations of the growth, the as-grown QDs usually do not exhibit the required symmetry, making the availability of post-growth tuning techniques essential. In this work first the QD-morphology of hundreds of QDs is correlated with the optical emission of neutral excitons confined in GaAs/AlGaAs QDs. It is presented how elastic anisotropic stress can be used to partially restore the symmetry of self-assembled GaAs/AlGaAs and InGaAs/GaAs QDs, making them as candidate sources of entangled photon pairs. As a consequence of the tuning of the QD-anisotropy we observe a rotation of the polarization of the emitted light. The joint modification of polarization orientation and QD anisotropy can be described by an anticrossing of the so-called bright excitonic states. Furthermore, it is demonstrated that anisotropic stress can be used to tune the purity of the hole states of the QDs by modifying the degree of heavy and light hole mixing. This ability might be interesting for applications using the hole spin as a so-called quantum bit.

Recombination mechanisms in gallium arsenide have been studied using temperature-dependent time-resolved photoluminescence-decay. New analytical methods are presented to improve the accuracy in bulk lifetime measurement, and these have been used to resolve the temperature-dependent lifetime. Fits to temperature-dependent lifetime yield measurement of the radiative-efficiency, revealing that samples grown by the Czochralski and molecular-beam-epitaxy methods are limited by radiative-recombination at 77K, with defect-mediated nonradiative-recombination becoming competitive at 300K and above. In samples grown with both doping types using molecular-beam-epitaxy, a common exponential increase in capture cross-section characterized by a high value of E_infinity=(258 +/- 1)meV was observed from the high-level injection lifetime over a wide temperature range (300-700K). This common signature was also observed from 500-600K in the hole-lifetime observed in n-type Czochralski GaAs where E_infinity=(261 +/- 7)meV was measured, which indicates that this signature parametrizes the exponential increase in hole-capture cross-section. The high E_infinity value rules out all candidate defects except for EL2, by comparison with hole-capture cross-section data previously measured by others using deep-level transient spectroscopy. / Thesis / Doctor of Philosophy (PhD)

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Thema dieser Arbeit ist die Synthese von GaAs Nanodrähten mittels Molekularstrahlepitaxie. Dabei wird das Wachstum mittels Au- und jenes mittels selbst-induziertem VLS-Mechanismus verglichen. Die Au-induzierte Methode ist als vielseitiger Ansatz für die Herstellung von Nanodrähten bekannt. Darüberhinaus wird seit Neuerem der selbst-induzierte Mechanismus untersucht, bei dem Galliumtropfen die Rolle des Goldes übernehmen, um eine etwaige Verunreinigung mit Au von vornherein auszuschliessen. Mit beiden Wachstumsmethoden erzielen wir GaAs Nanodrähte mit großem Aspektverhältnis und epitaktischer Beziehung zum Si(111) Substrat. Während des Au-induzierten Wachstums entsteht eine parasitäre Schicht zwischen den Drähten, die mittels des selbst-induzierten Mechanismus vermieden werden. Alle GaAs Drähte sind vollständig relaxiert. Die durch die Gitterfehlanpassung (4,1\% zwischen GaAs und Si) verursachte Verspannung wird durch Versetzungen an der Grenzfläche abgebaut. Selbst-induzierte Drähten zeigen ausschließlich unpolare Seitenfacetten, während verschiedene polare Facetten für Au-induzierte Nanodrähte beschrieben werden. Mittels VLS-Nukleationstheorie könnne wir den Einfluss des Tropfenmaterials auf die Stabilität der verschiedenen Seitenfacetten erklären. Optoelektronische Anwendungen benötigen lange Minoritätsladungsträgerlebensdauern bei Raumtemperatur. Daher wurden mit (Al,Ga)As Hüllen ummantelte GaAs Nanodrähte mittels zeitaufgelöster PL vermessen. Das Ergebnis sind 2,5 ns für die selbst-induzierten aber nur 9 ps für die Au-induzierten Nanodrähte. Durch temperaturabhängige PL Messungen kann eine charakteristische Aktivierungsenergie von 77 meV nachgewiesen werden, die nur in den Au-induzierten Nanodrähten vorliegt. Dies suggeriert, dass sich Au aus den Tröpfchen in die GaAs Nanodrähte einbaut und dort als tiefes, nichtstrahlendes Rekombinationszentrum fungiert. / In this work the synthesis of GaAs nanowires by molecular beam epitaxy (MBE) using the vapour-liquid-solid (VLS) mechanism is investigated. A comparison between Au- and self-assisted VLS growth is at the centre of this thesis. While the Au-assisted method is established as a versatile tool for nanowire growth, the recently developed self-assisted variation results from the exchange of Au by Ga droplets and thus eliminates any possibility of Au incorporation. By both methods, we achieve nanowires with epitaxial alignment to the Si(111) substrates. Caused by differences during nanowire nucleation, a parasitic planar layer grows between the nanowires by the Au-assisted method, but can be avoided by the self-assisted method. Au-assisted nanowires grow predominantly in the metastable wurtzite crystal structure, while their self-assisted counterparts have the zincblende structure. All GaAs nanowires are fully relaxed and the strain arising from the lattice mismatch between GaAs and Si of 4.1\% is accommodated by misfit dislocations at the interface. Self-assisted GaAs nanowires are generally found to have vertical and non-polar side facets, while tilted and polar nanofacets were described for Au-assisted GaAs nanowires. We employ VLS nucleation theory to understand the effect of the droplet material on the lateral facets. Optoelectronic applications require long minority carrier lifetimes at room temperature. We fabricate GaAs/(Al,Ga)As core-shell nanowires and analyse them by transient photoluminescence (PL) spectroscopy. The results are 2.5 ns for the self-assisted nanowires as well as 9 ps for the Au-assisted nanowires. By temperature-dependent PL measurements we find a characteristic activation energy of 77 meV that is present only in the Au-assisted nanowires. We conclude that most likely Au is incorporated from the droplets into the GaAs nanowires and acts as a deep, non-radiative recombination centre.

In dieser Dissertation wird zum einen die ultraschnelle Ladungsträgerkinetik in einem Galliumnitrid (GaN)-basierten Übergitter, zum anderen die piezoelektrische Elektron-Phonon-Wechselwirkung kohärenter zonengefalteter Phononen in Galliumarsenid (GaAs)-basierten Übergittern behandelt. Mittels spektral- und zeitaufgelöster Photolumineszenzmessungen an einem n-dotierten GaN/Al0,18Ga0,82N Übergitter mit Parametern ähnlich derer in optoelektronischen Bauelementen wurde die defektbedingte Ladungsträgerkinetik untersucht, die innerhalb von ca. 150 ps durch den Einfang in tiefe, nichtstrahlende Rekombinationszentren beeinflusst wird. Die Untersuchung einer Passivierung mit Siliziumnitrid zur Verhinderung von Degradationseffekten zeigte ein stabiles optisches Langzeitverhalten bei gleichzeitiger Zunahme nichtstrahlender Defekte. Ferner wurde mit spektral aufgelöster Anrege-Abfrage-Spektroskopie eine Einfangkinetik auf einer Zeitskala von 150 - 200 fs in Defektzustände nahe der Übergitterbandkante gemessen, gefolgt von der Abkühlung der Ladungsträger durch Phononemission innerhalb weniger Pikosekunden bei Raumtemperatur und 35 ps bei 5 K. Kohärente zonengefaltete Phononen wurden mit Anrege-Abfrage-Spektroskopie an zwei AlAs/GaAs-Übergittern untersucht, die in [100]-, bzw. [111]-Richtung gewachsen wurden. Dies ermöglicht die (gezielte) Untersuchung der piezoelektrischen Elektron-Phonon-Kopplung, da diese für longitudinal-akustischen Phononen nur in der [111]-Probe existiert. Die Amplitude kohärenter Phononen mit einem Wellenvektor von q=0 in der [111]-Probe fällt verglichen mit denen in der [100]- und der [111]-Probe mit q≠0 signifikant schneller ab. Kohärente Phononen verursachen in der [111]-Probe bei q=0 ein makroskopisches piezoelektrisches Feld, welches Ladungsträger beschleunigt, die durch Reibung kohärente Phononen dämpfen. Bei hohen Ladungsträgerdichten unterdrückt die Abschirmung der induzierten piezoelektrischen Felder diese zusätzliche Dämpfung. / In this dissertation, the ultrafast carrier dynamics in a gallium nitride (GaN)-based superlattice as well as the piezoelectric electron-phonon-coupling of coherent zone-folded phonons in gallium arsenide (GaAs)-based superlattices are addressed. Using spectrally and time-resolved photoluminescence experiments on an exemplary n-doped GaN/Al0.18Ga0.82N superlattice with parameters similar to those in optoelectronic devices, we investigated the defect-related carrier kinetics, that are affected by trapping in saturable nonradiative recombination centers on time scales of ~150 ps. The investigation of a passivation with silicon nitride to prevent degradation effects show a long-term optical stability with a concomitant increase in non-radiative defect densities. Furthermore, spectrally resolved pump-probe spectroscopy was used to measure trapping kinetics into defect states near the conduction band minimum on a time scale of 150 – 200 fs. These kinetics are followed by carrier cooling through phonon emission within a few picoseconds at room temperature and within 35 ps at 5 K. Coherent zone-folded phonons were studied with pump-probe spectroscopy on two AlAs/GaAs superlattices grown in [100] and [111] direction, respectively. This allows the specific investigation of the piezoelectric electron-phonon interaction, since this exists for longitudinal acoustic phonons only in the [111] sample. The amplitude of coherent phonons with a wave vector of q=0 in the [111] sample decays significantly faster than in the [100] and the [111] samples with q≠0. Coherent phonons in the [111] sample cause a macroscopic piezoelectric field to which the photogenerated electron-hole plasma couples. Friction of the accelerated carriers provides the additional damping mechanism. High carrier densities screen the induced piezoelectric field, thus reducing the damping mechanism via the piezoelectric interaction.

In dieser Arbeit wird die ultraschnelle Dynamik von Leitungsbandelektronen in Halbleitermaterialien mit Hilfe nichtlinearer Terahertz-Spektroskopie erforscht. Insbesondere wird n-dotiertes Galliumarsenid bei mittleren Dotierdichten zwischen 10^(16) cm^(-3) und 10^(17) cm^(-3) untersucht. Für die Erzeugung intensiever THz Strahlung wurde eine neuartige Quelle entwickelt, die THz Transienten mit nur einer Oszillationsperiode und maximalen Feldamplituden von mehr als 400 kV/cm liefert. Diese THz-Quelle benutzt ultrakurze optische Laserpulse aus einem Ti:Saphir Oszillator. Zusätzlich wurde ein neuartiger zwei-Farben Anrege-Abtast Experimentierplatz aufgebaut, der zweidimensionale, zeitaufgelöste Messungen im mittleren und fernen Infrarotbereich ermöglicht. Feldionisation flacher, neutraler Störstellen im Galliumarsenid-Gitter mittels intensiver, ultrakurzer THz Impulse und die anschliessende kohärente, strahlende Rekombination von Elektronen in die Störstellen-Grundzustände bei Raumtemperatur wird gezeigt. Der superradiante Zerfall der nichtlinearen Polarisation führt zur Abstrahlung eines kohärenten Signals mit Lebensdauern von über einer Pikosekunde. Solche nichtlinearen Signale, die 10-fache Lebensdauern im Vergleich zum linearen Fall aufweisen, wurden in dieser Arbeit zum ersten Mal gemessen. Bei niedrigen Temperaturen und THz Feldstärken unter 5 kV/cm werden Rabi-Oszillationen an Übergängen in flachen Störstellen demonstriert. Zum ersten Mal konnte die polare Elektron-LO-Phonon Wechselwirkung im quantenkinetischen Regime direkt gemessen werden. Die quasi-instantane Beschleunigung von Leitungsbandelektronen im polaren Galliumarsenid-Gitter und die anschließende Messung der Transmission im mittleren Infrarot-Bereich, zeigen eine Modulation der Transmission entlang der Anrege-Abtast Verzögerung mit der Frequenz des LO Phonons. Diese Oszillation ist ein direktes Maß der relativen Phase zwischen der Elektronenbewegung und der umgebenden Phonon Wolke. Quantenkinetische Modellrechnungen reproduzieren vollständig die beobachteten Effekte. / In this thesis, the ultrafast dynamics of conduction band electrons in semiconductors are investigated by nonlinear terahertz (THz) spectroscopy. In particular, n-doped gallium arsenide samples with doping concentrations in the range of 10^16cm^(-3) to 10^17 cm^(-3) are studied. A novel source for the generation of intense THz radiation is developed which yields single-cycle THz transients with field amplitudes of more then 400 kV/cm. The THz source uses ultrashort optical laser pulses provided by a Ti:sapphire oscillator. In addition, a two-color THz-pump mid-infrared-probe setup is implemented, which allows for two-dimensional time-resolved experiments in the far-infrared wavelength range. Field ionization of neutral shallow donors in gallium arsenide with intense, ultrashort THz pulses and subsequent coherent radiative recombination of electrons to impurity ground states is observed at room temperature. The superradiant decay of the nonlinear polarization results in the emission of a coherent signal with picosecond lifetimes. Such nonlinear signals, which exhibit a lifetime ten times longer than in the linear regime are observed for the first time. At low temperatures and THz field strengths below 5 kV/cm, Rabi flopping on shallow donor transitions is demonstrated. For the first time, the polar electron-LO phonon interaction is directly measured in the quantum kinetic transport regime. Quasi-instantaneous acceleration of conduction band electrons in the polar gallium arsenide lattice by the electric field of intense THz pulses and subsequent probing of the mid-infrared transmission reveals a modulation of the transmission along the THz-mid-infrared delay coordinate with the frequency of the LO phonon. These modulations directly display the relative phase between the electron motion and its surrounding virtual phonon cloud. Quantum kinetic model calculations fully account for the observed phenomena.

Die Erzeugung spinpolarisierter Ladungsträger in einem Halbleiter gilt als Grundvoraussetzung zur Realisierung spintronischer Bauelemente. Einen möglichen Ansatz zu deren Realisierung stellen Ferromagnet/Halbleiter(FM/HL)-Hybridstrukturen dar, deren Herstellung jedoch mit einigen Schwierigkeiten verbunden ist. Durch die Vermischung des ferromagnetischen Materials mit dem Halbleiter werden die elektronischen Eigenschaften der Hybridstruktur verändert und die Spininjektionseffizienz stark verringert. Durch das gezielte Einfügen einer dünnen Oxidschicht in den FM/HL-Grenzübergang kann die Diffusion unterdrückt, die Kristallqualität verbessert und die Effizienz der Struktur erhöht werden. Diese Arbeit beschäftigt sich mit dem Wachstum und der Charakterisierung dünner Oxidschichten, hergestellt mittels Molekularstrahlepitaxie. Zwei Seltenerdoxide, La2O3 und Lu2O3, werden auf GaAs-Substraten gewachsen und die Kristallqualität der Schichten miteinander verglichen. Mit der Heusler-Legierung Co2FeSi als Injektorschicht wird eine FM/Oxid/HL-Hybridstruktur auf Basis einer La2O3/GaAs(111)B-Struktur realisiert und magnetisch und elektrisch charakterisiert. Ein häufig verwendetes Barrierenmaterial in FM/HL-Hybridstrukturen ist Magnesiumoxid (MgO). In dieser Arbeit werden dünne MgO-Schichten auf GaAs(001) an der PHARAO-Wachstumsanlage am BESSY II erzeugt. Dies geschieht durch getrenntes Verdampfen von metallischem Mg bzw. Einleiten von molekularem Sauerstoff in die Wachstumskammer. Um die Oxidation des Halbleitersubstrats zu verhindern, wird vor dem MgO-Wachstum eine dünne Mg-Schicht abgeschieden. Abhängig von der Dicke dieser Schicht sind zwei in-plane-Orientierungen des MgO relativ zum GaAs kontrolliert einstellbar. Darüber hinaus werden Hybridstrukturen mit Eisen Fe als Injektorschicht und schrittweise erhöhter MgO-Schichtdicke gewachsen. Die Eindiffusion von Fe in das GaAs-Substrat nimmt mit zunehmender MgO-Schichtdicke um mehrere Größenordnungen ab. / The generation of spin-polarized charge carriers in a semiconductor is a basic building block for the implemention of spintronic devices. A feasible approach to their implementation are ferromagnet/semiconductur(FM/SC) hybrid structures, whose fabrication is associated with some issues. The intermixing of the ferromagnetic material with the semiconductor leads to distortion of the electrical properties of the hybrid structure and the spin injection efficiency is reduced. By intentionally inserting a thin oxide layer into the FM/SC interface diffusion can be suppressed while the crystal quality and the spin injection efficiency of the structure are both increased. In this thesis the growth and characterization of thin oxide films fabricated by molecular beam epitaxy are discussed. Two rare earth oxides, La2O3 and Lu2O3, are grown on GaAs substrates and their crystal qualities are compared. Based on La2O3/GaAs(111)B full FM/SC hybrid structures are grown with the Heusler alloy Co2FeSi as injection layer and characterized by magnetic and electrical means. Another material used as a barrier in FM/SC hybrid structures is magnesium oxide (MgO). Here, thin MgO layers are grown on GaAs(001) at the PHARAO system at BESSY II. The growth is conducted by the separated evaporation of metallic Mg and introducing molecular oxygen into the growth chamber. To avoid oxidation of the semiconducting substrate a thin Mg layer is deposited prior to the MgO growth. Depending on the Mg layer thickness two different MgO in-plane orientations can be achieved with respect to the GaAs substrate. Furthermore, FM/SC hybrid structures with iron Fe as injection layer are grown while the MgO layer thickness is increased gradually. The indiffusion of Fe into the GaAs substrate is suppressed by several orders of magnitude with increasing MgO layer thickness.

A study of three novel solar cells is presented, all of which incorporate a low-dimensional quantum confined component in a bid to enhance device performance. Firstly, intermediate band solar cells (IBSCs) based on InAs quantum dots (QDs) in a GaAs p-i-n structure are studied. The aim is to isolate the InAs QDs from the GaAs conduction band by surrounding them with wider band gap aluminium arsenide. An increase in open circuit voltage (V_OC) and decrease in short circuit current (J_sc) is observed, causing no overall change in power conversion efficiency. Dark current - voltage measurements show that the increase in V_OC is due to reduced recombination. Electroreflectance and external quantum efficiency measurements attribute the decrease in J_sc primarily to a reduction in InGaAs states between the InAs QD and GaAs which act as an extraction pathway for charges in the control device. A colloidal quantum dot (CQD) bulk heterojunction (BHJ) solar cell composed of a blend of PbS CQDs and ZnO nanoparticles is examined next. The aim of the BHJ is to increase charge separation by increasing the heterojunction interface. Different concentration ratios of each phase are tested and show no change in J_sc, due primarily to poor overall charge transport in the blend. V_OC increases for a 30 wt% ZnO blend, and this is attributed largely to a reduction in shunt resistance in the BHJ devices. Finally, graphene is compared to indium tin oxide (ITO) as an alternative transparent electrode in squaraine/ C₇₀ solar cells. Due to graphene’s high transparency, graphene devices have enhanced J_sc, however, its poor sheet resistance increases the series resistance through the device, leading to a poorer fill factor. V_OC is raised by using MoO₃ as a hole blocking layer. Absorption in the squaraine layer is found to be more conducive to current extraction than in the C₇₀ layer. This is due to better matching of exciton diffusion length and layer thickness in the squaraine and to the minority carrier blocking layer adjacent to the squaraine being more effective than the one adjacent to the C₇₀.