Neste trabalho, é apresentada uma análise da operação analógica de transistores de múltiplas portas, avaliando a tensão Early, o ganho de tensão em malha aberta, a razão da transcondutância pela corrente de dreno (gm/IDS), a condutância de dreno e, em especial, a distorção harmônica, exibida por estes dispositivos. Ao longo deste trabalho, foram estudados FinFETs, dispositivos de porta circundante (Gate-All-Around GAA) com estrutura de canal gradual (Graded-Channel GC) e transistores MOS sem junções (Junctionless - JL). Inicialmente, foi efetuada a análise da distorção harmônica apresentada por FinFETs com e sem a presença de tensão mecânica biaxial, com diversas larguras de fin (Wfin) e comprimentos de canal (L), quando estes operavam em saturação, como amplificadores de um único transistor. Nesta análise, as não-linearidades foram avaliadas através da extração das distorções harmônicas de segunda e terceira ordens (HD2 e HD3, respectivamente), mostrando que a presença de tensão mecânica tem pouca influência em HD2, mas altera levemente a HD3. Quando os ganhos de tensão em malha aberta dos dispositivos são levados em conta, transistores sem tensão, também chamados de convencionais, mais estreitos apresentam grande vantagem em termos de HD2 em relação aos tensionados. Ainda nesta análise, percebeu-se que HD2 e HD3 de transistores tensionados pioram com a redução da temperatura, especialmente em inversão mais forte. Na seqüência, foi efetuada uma análise de HD3 em FinFETs com e sem tensão mecânica de vários comprimentos e larguras de canal, operando em região triodo e aplicados a estruturas balanceadas 2-MOS, mostrando que presença de tensão mecânica traz pouca influência em HD3, mas reduz a resistência do canal dos dispositivos (RON), o que não é bom em estruturas resistivas, como as avaliadas. Nesta análise, ainda, pode-se perceber uma melhora em HD3 superior a 30 dB ao se incrementar VGT de zero a 1,0 V, em cuja tensão dispositivos mais estreitos apresentam curvas mais lineares que os mais largos. Então, foi estudada a distorção apresentada por transistores GAA e GC GAA operando em regime triodo, aplicados a estruturas 2-MOS, onde se pôde perceber que GC GAAs com maiores comprimentos da região fracamente dopada apresentam vantagem em HD3 em relação aos demais, para valores de VGT superiores a 2 V. Na avaliação destas estruturas em função da temperatura, percebeu-se que, para VGT superiores a 1,1 V, HD3 depende fortemente da temperatura e piora conforme a temperatura diminui. O estudo envolvendo transistores sem junções foi mais focado em seus parâmetros analógicos, comparando-os aos apresentados por dispositivos de porta tripla ou FinFETs. Em inversões moderada e forte, transistores sem junção apresentaram menores valores para gm/IDS em relação a dispositivos de FinFETs polarizados em um mesmo nível de corrente, entretanto, a dependência de gm/IDS com a temperatura em transistores sem junção também foi menor que a apresentada por FinFETs. JL e FinFETs apresentaram comportamentos distintos para a tensão Early e o ganho de tensão em malha aberta em função da temperatura. Estes parâmetros sempre melhoram com o aumento da temperatura em dispositivos JL, enquanto que exibem seu máximo valor em temperatura ambiente em FinFETs. Nas proximidades da tensão de limiar, transistores sem junção com largura de fin de 30 nm exibiram tensão Early e ganho superiores a 80 V a 57 dB, respectivamente, enquanto que FinFETs mostraram Tensão Early de 35 V e ganho de 50 dB. Em todos os estudos efetuados ao longo do trabalho, procurou-se apontar as causas das não-linearidades apresentadas pelos dispositivos, a partir de modelos analíticos que pudessem relacionar a física de funcionamento dos transistores com os resultados experimentalmente obtidos. / In this work it is presented an analysis of the analog operation of multiple gate transistors, evaluating the Early Voltage, the open-loop voltage gain, the transconductance over the drain current ratio (gm/IDS), the drain conductance and, especially, the harmonic distortion exhibited by these devices. Along the work, FinFETs, Gate-All-Around (GAA) devices with the Graded-Channel (GC) structure and MOS transistors without junctions (Junctionless - JL) were studied. Initially, an analysis of the harmonic distortion presented by conventional and biaxially strained FinFETs with several fin widths (Wfin) and channel lengths (L) was performed, when these devices were operating in saturation as single transistor amplifiers. In this analysis, the non-linearities were evaluated through the extraction of the second and the third order harmonic distortions (HD2 and HD3, respectively), and it was shown that the presence of strain has negligible influence in HD2, but slightly changes HD3. When the open loop voltage gain of the devices is taken into consideration, narrower conventional transistors present a huge advantage with respect to the strained ones in terms of HD2. Also, it was perceived that both HD2 and HD3 of strained FinFETs worsen with the temperature decrease, especially in stronger inversion. In the sequence, an analysis of the HD3 presented by conventional and strained FinFETs of several fin widths and channel lengths operating in the triode regime was performed. These devices were applied to 2-MOS balanced structures, showing that the presence of the strain does not influence significantly the HD3, but reduces the resistance in the channel of the transistors (RON), which is not good for resistive structures as the ones evaluated. In this analysis, it can also be observed an HD3 improvement of 30 dB when VGT is increased from zero up to 1,0 V, where narrower devices present transfer characteristics more linear than the wider ones. Then, it was studied the distortion presented by GAA and GC GAA devices operating in the triode regime, applied to 2-MOS structures. In this case, it could be perceived that GC GAAs with longer lightly doped regions present better HD3 in comparison to the other devices for VGT higher than 2.0 V. In the evaluation of these structures as a function of the temperature, it could be seen that for VGT higher than 1.1 V, HD3 strongly depends on the temperature and worsens as the temperature decreases. The study involving JL transistors was focused on their analog parameters, comparing them to the ones presented by triple gate devices or FinFETs. In moderate and strong inversions, Junctionless showed lower values for gm/IDS with respect to triple gate devices biased at a similar current level. However, the dependence of gm/IDS from Junctionless with the temperature was also smaller than the one presented by FinFETs. Junctionless and FinFETs exhibited distinct behaviors for the Early voltage and the open-loop voltage gain as a function of the temperature. These parameters always improve with the temperature raise in JL devices whereas they exhibit their maximum values around room temperatures for FinFETs. In the proximity of the threshold voltage, Junctionless with fin width of 30 nm presented Early voltage and intrinsic gain larger than 80 V and 57 dB, respectively, whereas FinFETs exhibited Early voltage of 35 V and gain of 50 dB. For all the studies performed in this work, the probable causes of the non-linearities were pointed out, from analytic models that could correlate the physical work of the devices with the experimental results.

Submitted by Renata Lopes (renatasil82@gmail.com) on 2017-04-24T17:21:05Z No. of bitstreams: 1 leandrorodriguesmansosilva.pdf: 691785 bytes, checksum: 4024e0e319f1469cc354c2c346a90dbe (MD5) / Approved for entry into archive by Adriana Oliveira (adriana.oliveira@ufjf.edu.br) on 2017-04-24T17:59:43Z (GMT) No. of bitstreams: 1 leandrorodriguesmansosilva.pdf: 691785 bytes, checksum: 4024e0e319f1469cc354c2c346a90dbe (MD5) / Made available in DSpace on 2017-04-24T17:59:43Z (GMT). No. of bitstreams: 1 leandrorodriguesmansosilva.pdf: 691785 bytes, checksum: 4024e0e319f1469cc354c2c346a90dbe (MD5) Previous issue date: 2012-02-29 / CAPES - Coordenação de Aperfeiçoamento de Pessoal de Nível Superior / A distorção harmônica, dentre outras formas de poluição na rede de sistemas de energia, é um importante problema para as concessionárias. De fato, o aumento do uso de dispositivos não-lineares na indústria resultou em um aumento direto da distorção harmônica nos sistemas elétricos de potência nos últimos anos. Com isso, a modelagem destas cargas e suas interações se tornaram de grande importância, e portanto, o uso de novas técnicas computacionais passou a ser de grande interesse para este fim. Neste contexto, este trabalho descreve uma metodologia baseada em técnicas de Inteligência Computacional (Redes Neurais Artificiais (RNA)s e Lógica Fuzzy (LF)), proposta para modelagem de cargas não-lineares presentes em sistemas elétricos de potência, bem como a estimação de sua parcela na distorção harmônica do sistema. A principal vantagem deste método é que apenas as formas de onda de tensão e corrente no ponto de acoplamento comum precisam ser medidas, além disso esta técnica pode ser aplicada na modelagem de cargas monofásicas bem como cargas trifásicas. / The harmonic distortin, among other forms of pollution to the electric power systems is an important issue for electric utilities. In fact, the increased use of nonlinear devices in industry has resulted in direct increase of harmonic distortion in industrial power grids in recent years. Thus, the modeling of these loads and the understanding of their interactions with the system have became of great importance, then the use of computational-based techniques has emerged as a suitable tool to deal with these requirements. In this context, this work describes a methodology based on Computational Intelligence (Artificial Neural Networks (ANN)s and Fuzzy Logic (FL)) for modeling nonlinear loads present in electric power systems, as well as the estimation of their contribution in the harmonic distortion. The main advantage of this technique is that only the waveforms of voltages and currents at the point of common coupling must be measured and it can be applied to model single and three phase loads.

The grid-connected photo-voltaic (PV) system is one of the most promising renewable energy solutions which offers many benefits to both the end user and the utility network and thus it has gained the popularity over the last few decades. However, due to the very nature of its invariability and weather dependencies, the large scale integration of this type of distributed generation has created challenges for the network operator while maintaining the quality of the power supply and also for reliable and safe operations of the grids. In this study, the behavioral impact of large scale PV system integration which are both steady and dynamic in nature was studied.  An aggregate PV model suited to study the impacts was built using MATLAB/Simulink.  The integration impacts of PV power to existing grids were studied with focus on the low voltage residential distribution grids of Mälarenergi Elnät AB (10/0.4 kV). The steady state impacts were related to voltage profile, network loss. It was found that the PV generation at the load end undisputedly improves the voltage profile of the grid especially for the load buses which are situated at farther end of the grid. Further, with regard to the overvoltage issue, which is generally a concern during the low load demand period it was concluded that, at a 50% PV penetration level, the voltage level for the load buses is within the limit of 103% as prescribed by the regulator excepting for few load buses. The voltage level for load buses which deviate from the regulatory requirement are located at distance of 1200 meter or further away from the substation. The dynamic impact studied were for voltage unbalancing in the grid, which was found to have greater impact at the load buses which is located farther compared to a bus located nearer to the substation. With respect to impact study related to introduction of harmonics to the grid due to PV system integration, it was found that amount of harmonic content which was measured as total harmonic distortion (THD) multiplies with integration of more number of PV system. For a 50 % penetration level of PV, the introduced harmonics into the representative network is very minimal. Also, it was observed from the simulation study that THD content are be less when the grid operates at low load condition with high solar irradiance compared to lower irradiance and high load condition.

Este trabalho consiste em apresentar o desenvolvimento de um Smart meter, integrado a um analisador de qualidade de energia, para análise de distorções harmônicas, utilizando método de redes neurais artificiais embarcado em hardware. Tal Smart meter está incluído dentro dos conceitos de Smart Grid, que serão apresentados também neste trabalho. O intuito do desenvolvimento do Smart meter para análise de distorções harmônicas é auxiliar concessionárias de energia elétrica a identificar que tipo de carga o consumidor utiliza em sua residência, a fim de contribuir para a tomada de decisões apropriadas, tais como a diminuição da emissão de correntes harmônicas, demanda de energia, detecção de falhas no fornecimento de energia elétrica e faturas diferenciadas de acordo com a quantidade de harmônicas injetadas na rede elétrica. Adicionalmente, observou-se que o Smart meter desenvolvido pode ser ainda utilizado para detectar fenômenos de VTCD, como elevação, afundamento e interrupção de energia. Todo o processo de desenvolvimento do Smart meter é apresentado no decorrer desta tese de doutorado. / This thesis consists to present the development of a Smart Meter integrated to power quality analyzer for the analysis of harmonic distortion, using methods based on artificial neural networks in embedded hardware. This Smart Meter is included within the concepts of Smart Grid, which will be also presented in this work. The intention of the development of the Smart Meter for analysis of harmonic distortion is to assist utilities companies to identify what loads type the consumer uses at your residence in order to contribute for supporting decisions, such as reducing the emission of the harmonic currents, power demand and faults detection in electric energy supply and distinct bills according to the amount of harmonics injected into the power grid. In addition, it was observed that this developed Smart Meter can be even used to detect the VTCD phenomena, such as swell, sag and interruption of the energy supply. All development steps of this Smart Meter is presented in this doctoral thesis.

Cílem této diplomové práce je změřit a vyhodnotit parametry techniky slučování kanálů, která je momentálně implementována v součástce AD7606C firmy Analog Devices. Poté, na základě výsledků z měření, navrhnout a odsimulovat několik možností, pomocí kterých by tato technika mohla dosahovat vyšších hodnot dynamického rozsahu a celkového harmonického zkreslení. V průběhů práce bylo zjištěno, že pomocí zvýšení zesílení kanálu s nižším rozsahem společně se snížením mezní frekvence celého signálového řetězce může tato technika dosahovat až 118.6 dB dynamického rozsahu, což je o 3.6 dB více, než bylo změřeno na AD7606C. Dále také bylo zjištěno, že pomocí jednoduchého algoritmu implementovaného v logickém bloku, je možné dosáhnout imunity vůči hodnotě externího rezistoru, který zákazníci používají jako součást anti-aliasingového filtru.

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A new technique to qualitatively measure distortion in dynamically controlled audio systems using non-stationary noise sequences is explored and compared to traditional methods based upon stationary test signals. This technique can easily be adapted to give a qualitative measure of distortion as a function of the perceived Sound Pressure Level (SPL).

Cette thèse porte sur des micro-réseaux AC isolées qui permettent l’intégration des ressources énergétiques distribuées (DER) pouvant fournir leur énergie d'alimentation existante de manière contrôlée pour assurer le bon fonctionnement global du système. L'interconnexion d'un DER à une micro-réseau s'effectue habituellement en utilisant un convertisseur d'interface distribué (DIC) (i.e. un bloc d'interface d'électronique de puissance générale) qui est constitué d’un module de convertisseur à l'entrée de la source, un onduleur de tension (VSI), un module d'interfaçage de sortie, et le module de commande. Dans cette thèse on réalise plusieurs lois de commande basées sur des méthodes décentralisées. L'accent principal est mis sur les fonctions "Droop" qui ont la tâche de maintenir un équilibre de distribution d'énergie entre les différentes sources énergétiques connectées à la micro-réseau. L'objectif est d'assurer la stabilité du système et d’améliorer les performances dynamiques en partageant la puissance entre les différents générateurs d’électricité distribués (DGs) en fonction de leur puissance nominale. Le développement d'une analyse de stabilité en boucle fermée s’avère utile pour étudier la dynamique du système afin d'obtenir une réponse transitoire souhaitée qui permet d'identifier les paramètres de contrôle de boucle appropriés. L'amélioration de la qualité d’énergie des micro-réseaux est également un objectif de cette thèse. La réduction des distorsions harmoniques de la tension de sortie en présence de charges linéaires et non linéaires est prise en compte dans nos travaux. D'autres aspects seront étudiés sur la façon de traiter les charges constantes connectées au réseau et les grandes perturbations qu’ils produisent. Cela donne lieu à d'autres études de recherche portant sur la stabilité grand signal des micro-réseaux / This thesis deals with islanded AC microgrid that allows any integration of Distributed Energy Resources (DERs) that may provide their existing supply energy in a controlled manner to insure overall system functioning. The interconnection of a DER to a microgrid is done usually by using a Distributed Interface Converter (DIC), a general power electronics interface block, which consists of a source input converter module, a Voltage Source Inverter module (VSI), an output interface module, and the controller module. The thesis realizes several control laws based on decentralized methods. The major focus is on the Droop functions that are responsible for providing a power distribution balance between different Energy Resources connected to a microgrid. The aim is to insure system stability and better dynamic performance when sharing the power between different DGs as function to their nominal power. Developing a closed loop stability analysis is useful for studying system dynamics in order to obtain a desired transient response that allows identifying the proper loop control parameters. Power Quality enhancement in microgrids is also a purpose of this research. The reduction of harmonic distortions of the output voltage when supplying linear and non-linear loads are taken in consideration in this thesis. Further aspects will be studied about how to deal with constant power loads connected to the grid and the large perturbations exerted. This results to further research studies that deal with large-signal stability of microgrids

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