This thesis is concerned with the influence of nanoscale boundaries and interfaces upon the electronic processes that occur within both organic and inorganic semiconductors. Photoluminescent polymers, highly conducting polymers and nanoscale inorganic semiconductors have been investigated using state-of-the-art ultrafast optical techniques, to provide information on the sub-picosecond photoexcitation dynamics in these systems. The influence of dimensionality on the excitation transfer dynamics in a conjugated polymer blend is studied. Using time-resolved photoluminescence spectroscopy, the transfer transients both for a three-dimensional blend film, and for quasi-two-dimensional monolayers formed through intercalation of the polymer blend between the crystal planes of a SnS2 matrix have been measured. A comparison of the experimental data with a simple, dimensionality-dependent model is presented, based on point dipole electronic coupling between electronic transition moments. Within this approximation, the energy transfer dynamics are found to adopt a three-dimensional character in the solid film, and a two-dimensional nature in the monolayers present in the SnS2 -polymer nanocomposite. The time-resolved conductivity of isolated GaAs nanowires has been investigated by optical-pump terahertz-probe time-domain spectroscopy. The electronic response exhibits a pronounced surface plasmon mode that forms within 300 fs, before decaying within 10 ps as a result of charge trapping at the nanowire surface. The mobility has been extracted using the Drude model for a plasmon and is found to be remarkably high, being roughly one third of that typical for bulk GaAs at room-temperature and indicating the high quality and low bulk defect density in the nanowires studied. Finally, the time-resolved conductivity dynamics of photoexcited polymer-fullerene bulk heterojunction blends for two model polymers, P3HT and MDMO-PPV, blended with PCBM are presented. The observed terahertz-frequency conductivity is characteristic of dispersive charge transport for photoexcitation both at the π−π* absorption peak (560 nm for P3HT), and significantly below it (800 nm). The photoconductivity at 800 nm is unexpectedly high, which is attributed to the presence of a charge transfer complex. In addition, the excitation-fluence dependence of the photoconductivity is studied over more than four orders of magnitude. The time-averaged photoconductivity of the P3HT:PCBM blend is over 20 times larger than that of P3HT, indicating that long-lived positive polarons are responsible for the high photovoltaic efficiency of polymer:fullerene blends. At early times (~ ps) the linear dependence of photoconductivity upon fluence indicates that interfacial charge transfer dominates as an exciton decay pathway, generating charges with mobility of at least ~0.1cm2 V−1 s−1. At later times, a sub-linear relationship shows that carrier-carrier recombination effects influence the conductivity on a longer timescale (> 1 μs).

This work investigates the fundamental device limits related to operational voltage constraints and linearity in state-of-the-art silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs) in order to support the design of robust next-generation high-frequency transceivers. This objective requires a broad understanding of how much "usable" voltage exists compared to conventionally defined breakdown voltage specifications, so the role of avalanche-induced current-crowding (or "pinch-in") effects on transistor performance and reliability are carefully studied. Also, the effects of intermodulation distortion are examined at the transistor-level for new and better understanding of the limits and trade-offs associated with achieving enhanced dynamic range and linearity performance on existing and future SiGe HBT technology platforms. Based on these investigations, circuits designed for superior dynamic range performance are presented.

Hydrocarbon exploration, global navigation satellite systems, computed tomography, and aircraft avionics are just a few examples of applications that require system operation at an ambient temperature, pressure, or radiation level outside the range covered by military specifications. The electronics employed in these applications are known as "extreme environment electronics." On account of the increased cost resulting from both process modifications and the use of exotic substrate materials, only a handful of semiconductor foundries have specialized in the production of extreme environment electronics. Protection of these electronic systems in an extreme environment may be attained by encapsulating sensitive circuits in a controlled environment, which provides isolation from the hostile ambient, often at a significant cost and performance penalty. In a significant departure from this traditional approach, system designers have begun to use commercial off-the-shelf technology platforms with built in mitigation techniques for extreme environment applications. Such an approach simultaneously leverages the state of the art in technology performance with significant savings in project cost. Silicon-germanium is one such commercial technology platform that demonstrates potential for deployment into extreme environment applications as a result of its excellent performance at cryogenic temperatures, remarkable tolerance to radiation-induced degradation, and monolithic integration with silicon-based manufacturing. In this dissertation the radiation response of silicon-germanium technology is investigated, and novel transistor-level layout-based techniques are implemented to improve the radiation tolerance of HBT digital logic.

In this thesis, the strength of the LBIC system is enhanced in different aspects that includes its feasibility as a non-destructive characterization tool, the signal analysis and development of analytical solution to have better understanding on the defects and inhomogeneities in the quantum dot based hetero-structures for device applications, finally understanding its limits due to the size of the laser beam and interpretation of artefacts in the signal appearance due to the presence of co-devices. Chapter#1 provides the introduction and literature survey of the LBIC system. It covers the importance and area of application of the LBIC. Chapter#2 various tools and instrumentation are discussed briefly for the systems that are developed in the lab as well as standard tools utilised for the material characterization. A LBIC instrumentation a novel colloidal quantum dots (CQD) thin film deposition system is discussed. In the last part along with the standard characterization systems a software tool (semiconductor device simulator) is discussed, which is used to visualize and understand the LBIC profile that is obtained experimentally. Chapter#3 provides the information of colloidal synthesis of PbS and HgxCd1-xTe quantum dots. Device fabrication process is explained step by step for the following devices. p-n junction silicon diodes, PbS-CQD/Si hetero-structures, ITO/PbS-CQD/Al crossbar structures and HgCdTe-CQD/Si hetero-structures. Chapter#4 deals with the major constraints imposed on the LBIC due to the need of Ohmic contacts. To overcome this major limitation, in this work, the origin of the signal is studied with the remote contact geometry for silicon p-n junction devices. It was observed that the signals can be collected with the capacitively coupled remote contacts, where LBIC was ultimately demonstrated as contactless measurement tool without any compromise on the measurements and thus obtained physical parameters. The effect of finite laser beam size is also described, which was found to have effect on the actual dimensions measured with the LBIC images. LBIC utility is further enhanced with the Si/CQD based hetero-structure devices, which are the potential candidates in the evolving device technology to be utilized in various modular systems such as PDs and LED applications. Chapter#5 discusses the origin and possible mechanisms for lateral photo-voltage which is closely monitored in the PbS-CQD/Si hetero-junction device systems. Interestingly, it is observed that there are two different line profiles for n and p type Si substrates. Different mechanisms that give rise to this kind of profiles were found to be distinct and are related to the band alignment of the CQD/Si hetero-structure. It lead to the revelation of an interesting phenomenon and believed to be universally observed irrespective of the materials involved in the formation of hetero-junction. Simulations and experimental results are quite consistent and in agreement with each other, which confirm the underlying physical mechanism that connects the LBIC anomalies with the band alignment. Chapter#6 deals with the spatial variations in the transverse photocurrent in the PbS-CQD film which is studied as a function of applied bias. Analytical equation is setup for the photocurrent in the CQD film under applied bias with the help of available transport mechanism and equations from the literature. The spatial non-uniformity that exists in the photocurrent proved to be the result of spatial inhomoginities in the physical parameters. By correlating the spatial data to the analytical equation, it is shown that the inhomoginities can be predicted. This approach is important for the devices, where monolithic detectors are fabricated by depositing CQD film on Read-Out-Integrated-Circuit (ROIC), where the manifestation of non-uniformity can be understood and probably fixed. Chapter#7 HgCdTe CQD based devices are studied for the purpose of photo-detector applications in MWIR (3  5 μm) region. HgxCd1-xTe Colloidal quantum dots are technologically important due to their wide absorption range that covers different regions of the atmospheric window. HgxCd1-xTe are successfully synthesised, which covers the absorption edge up to ~6.25 m in the IR region. Absorption and photo-response studies are carried out on HgxCd1-xTe/Si hetero-junctions under incident IR radiation. It is observed that the band gap of the quantum dots can be tuned easily by controlling the growth time as a parameter, thus moulded HgxCd1-xTe CQD/Si hetero-structures were found to have good photo-response. Chapter#8 the summary and the future direction and scope of the work is discussed. This includes the interesting observations during this thesis work which are not reported here in details.

This thesis discusses vacuum deposited organic solar cells. It focuses on the investigation of new donor molecules blended with the standard electron acceptor C60. These donor-acceptor heterojunctions form the photoactive system of organic solar cells. In addition, the influence of the processing conditions on the morphology of the blend layers is investigated, as the morphology is crucial for an efficient generation of free charge carriers upon photon absorption. Bulk heterojunction solar cells with the donor DTDCTB are deposited at different substrate temperatures. We identify three substrate temperature regimes, discriminated by the behavior of the fill factor (FF ) as a function of the blend layer thickness. Devices deposited at RT have a maximum FF between 50 and 70 nm blend thickness, while devices deposited at 110 °C have a monotonically decreasing FF. At Tsub=85 °C, the devices have an S-kinked current-voltage curve. Grazing incidence wide angle X-ray scattering measurements show that this peculiar behavior of the FF is not correlated with a change in the crystallinity of the DTDCTB, which stays amorphous. Absorption measurements show that the average alignment of the molecules inside the blend also remains unchanged. Charge extraction measurements (OTRACE) reveal a mobility for the 110 °C device that is an order of magnitude higher than for the RT device. The difference in mobility can be explained by a higher trap density for the RT samples as measured by impedance spectroscopy. Despite slightly higher carrier lifetimes for the RT device obtained by transient photovoltage measurements, its mobility-lifetime product is still lower than for the 110 °C devices. Based on DTDCTB, three new donor materials are designed to have a higher thermal stability in order to achieve higher yields upon material purification using gradient sublimation. For PRTF, the thermal stability is increased demonstrated by a higher yield upon sublimation. However, all new materials have a reduced absorption as compared to DTDCTB, which limits the short current density, and the FF is more sensitive to an increase of the blend layer thickness. The highest power conversion efficiency is achieved for a PRTF:C60 solar cell with 3.8%. Interestingly, PRTF:C60 solar cells show exceptionally low nonradiative voltage losses of only 0.26 V. Another absorber molecule is the push-pull chromophore QM1. Scanning electron microscope (SEM) measurements show a growth of the molecule in nanowires on several substrates. The nanowires have lengths up to several micrometers and are several tens of nanometers wide. The formation of the nanowires is accompanied by a strong blue shift (650 meV) of the thin film absorption spectrum in comparison to the absorption in solution, which is attributed to H-aggregation of the molecules. Furthermore, the thin film absorption onset reaches up to 1100 nm, making the material a suitable candidate for a near infrared absorber in organic solar cells. For a solar cell in combination with C60, a power conversion efficiency of 1.9% was achieved with an external quantum efficiency of over 19% for the spectral range between 600 and 1000 nm. The method of “co-evaporant induced crystallization” as a means to increase the crystallinity of blend layers without increasing the substrate temperature during the deposition is investigated. Mass spectrometry (LDI-ToF-MS) measurements show that polydimethylsiloxane (PDMS), which is used as a co-evaporant, decomposes during the evaporation and only lighter oligomers evaporate. Quartz crystal microbalance (QCM) measurements prove that the detection of PDMS saturates at higher amounts of evaporated material. LDI-ToF-MS measurements show further that the determination of the volatilization temperature by QCM measurements is highly error prone. The method was applied to zinc phthalocyanine (ZnPc) :C60 solar cells, accepting the insertion of PDMS into the blend layer. Diffraction (GIXRD) measurements show a large increase in crystallinity. ZnPc:C60 solar cells produced by applying the method reveal a similar behavior as solar cells processed at a higher substrate temperature.

This thesis reports the successful rational design of three highly active photocatalytic semiconductor nanocrystal (SNC) systems by exploiting morphology effects and the electronic properties of type II semiconductor heterojunctions. Novel architectures of colloidal SNCs are produced with the aim of suppressing exciton recombination and improving charge extraction for the successful initiation of desirable redox chemistry. Rod-shaped niobium pentoxide Nb₂O₅ nanocrystals (NCs) are shown to exhibit significantly enhanced activity (10-fold increase in rate constant) relative to spherical-shaped NCs of the same material. The increase is attributed to Nb5⁺ Lewis acid site rich (001) surfaces, present in higher proportions in the rod morphology, which bind organic substrates from solution resulting in direct interaction with photogenerated charges on the surface of the NC. Building on the insights into morphology-activity dependence, type II semiconductor heterojunctions are exploited for their ability to increase exciton lifetimes and spatially separate charges. Two novel II-VI heterostructured semiconductor nanocrystals (HSNCs) systems are investigated: a series of CdX/ZnO (X = S, Se, Te) HSNCs and ZnS/ZnO HSNCs capped with two different surface ligands. In the first case, substantial photocatalytic activity improvement is observed for HSNCs (relative to pure ZnO analogues) according to the following trend: CdTe/ZnO > CdS/ZnO > CdSe/ZnO. The observed trend is explained in terms of heterojunction structure and fundamental chalcogenide chemistry. In the second case, both ZnS/ZnO HSNCs exhibit activity enhancement over analogous pure ZnO, but the degree of enhancement is found to be a function of surface ligand chemistry. Photocatalytic activity testing of all the materials investigated in this work is performed via the photodecomposition of methylene blue dye in aerated aqueous conditions under UVA (350 nm) irradiation. The synthetic techniques employed for the synthesis of colloidal SNCs investigated in this thesis range from chemical precipitation and solvothermal techniques to several different organometallic approaches. A wide variety of analytical techniques are employed for the chemical, structural and optical characterisation of SNC photocatalysts including: XRD, XPS, TEM, UV-vis absorption, PL spectroscopy and FTIR. Atom Probe Tomography (APT) is employed for the first time in the structural characterisation of II-VI heterojunctions in colloidal HSNCs. Overall, this thesis provides a useful contribution to the growing body of knowledge pertaining to the enhancement of photocatalytic SNCs for useful applications including: solar energy conversion to chemical fuels, the photodecomposition of pollutants and light-driven synthetic chemistry.

The present work focuses on the growth and characterizations of GaN and InN layers and nanostructures on p-Si(100) and p-Si(111) substrates by plasma-assisted molecular beam epitaxy and the studies of GaN/p-Si and InN/p-Si heterojunctions properties. The thesis is divided in to seven different chapters. Chapter 1 gives a brief introduction on III-nitride materials, growth systems, substrates, possible device applications and technical background. Chapter 2 deals with experimental techniques including the details of PAMBE system used in the present work and characterization tools for III-nitride epitaxial layers as well as nanostructures. Chapter 3 involves the growth of GaN films on p-Si(100) and p-Si(111) substrates. Phase pure wurtzite GaN films are grown on Si (100) substrates by introducing a silicon nitride layer followed by low temperature GaN growth as buffer layers. GaN films grown directly on Si (100) are found to be phase mixtured, containing both cubic and hexagonal modifications. The x-ray diffraction (XRD), scanning electron microscopy (SEM), photoluminescence (PL) spectroscopy studies reveal that the significant enhancement in the structural and optical properties of GaN films grown with silicon nitride buffer layer grown at 800 oC, when compared to the samples grown in the absence of silicon nitride buffer layer and with silicon nitride buffer layer grown at 600 oC. Core-level photoelectron spectroscopy of SixNy layers reveals the sources for superior qualities of GaN epilayers grown with the high temperature substrate nitridation process. The discussion has been carried out on the typical inverted rectification behavior exhibited by n-GaN/p-Si heterojunctions. Considerable modulation in the transport mechanism is observed with the nitridation conditions. The heterojunction fabricated with the sample of substrate nitridation at high temperature exhibites superior rectifying nature with reduced trap concentrations. Lowest ideality factors (~1.5) are observed in the heterojunctions grown with high temperature substrate nitridation which is attributed to the recombination tunneling at the space charge region transport mechanism at lower voltages and at higher voltages space charge limited current conduction is the dominating transport mechanism. Whereas, thermally generated carrier tunneling and recombination tunneling are the dominating transport mechanisms in the heterojunctions grown without substrate nitridation and low temperature substrate nitridation, respectively. A brief comparison of the structural, optical and heterojunction properties of GaN grown on Si(100) and Si(111) has been carried out. Chapter 4 involves the growth and characterizations of InN nanostructures and thinfilms on p-Si(100) and p-Si(111) substrates. InN QDs are grown on Si(100) at different densities. The PL characteristics of InN QDs are studied. A deterioration process of InN QDs, caused by the oxygen incorporation into the InN lattice and formation of In2O3/InN composite structures was established from the results of TEM, XPS and PL studies. The results confirm the partial oxidation of the outer shell of the InN QDs, while the inner core of the QDs remains unoxidized. InN nanorods are grown on p-Si(100), structural characterizations are carried out by SEM, and TEM. InN nanodots are grown on p-Si(100), structural characterizations are performed. InN films were grown on Si(100) and Si(111) substrates and structural characterizations are carried out. Chapter 5 deals with the the heterojunction properties of InN/p-Si(100) and InN/p-Si(111).The transport behavior of the InN NDs/p-Si(100) diodes is studied at various bias voltages and temperatures. The temperature dependent ZB BH and ideality factors of the forward I-V data are observed, while it is governed through the modified Richardson’s plot. The difference in FB BH and C-V BH and the deviation of ideality factor from unity indicate the presence of inhomogeneities at the interface. The band offsets derived from C-V measurements are found to be Δ EC=1.8 eV and Δ EV =1.3 eV, which are in close agreement with Anderson’s model. The band offsets of InN/p-Si heterojunctions are estimated using XPS data. A type-III band alignment with a valence band offset of Δ EV =1.39 eV and conduction band offset of ΔEC=1.81 eV is identified. The charge neutrality level model provides a reasonable description of the band alignment of the InN/p-Si interface. The interface dipole deduced by comparison with the electron affinity model is 0.06 eV. The transport studies of InN NR/p-Si(100) heterojunctions have been carried out by conductive atomic force microscopy (CAFM) as well as conventional large area contacts. Discussion of the electrical properties has been carried out based on local current-voltage (I-V) curves, as well as on the 2D conductance maps. The comparative studies on transport properties of diodes fabricated with InN NRs and NDs grown on p-Si(100) substrates and InN thin films grown on p-Si(111) substrates have also been carried out. Chapter 6 deals with the growth and characterizations of InN/GaN heterostructures on p-Si(100) and p-Si(111) substarets and also on the InN/GaN/p-Si heterojunction properties. The X-ray diffraction (XRD), scanning electron microscopy (SEM) studies reveal a considerable variation in crystalline quality of InN with grown parameters. Deterioration in the rectifying nature is observed in the case of InN/GaN/p-Si(100) heterojunction substrate when compared to InN/GaN/p-Si (111) due to the defect mediated tunneling effect, caused by the high defect concentration in the GaN and InN films grown on Si(100) and also due to the trap centers exist in the interfaces. Reduction in ideality factor is also observed in the case of n-InN/n-GaN/p–Si(111) when compared to n-InN/n-GaN/p–Si(100) heterojunction. The sum of the ideality factors of individual diodes is consistent with experimentally observed high ideality factors of n-InN/n-GaN/p–Si double heterojunctions due to double rectifying heterojunctions and metal semiconductor junctions. Variation of effective barrier heights and ideality factors with temperature are confirmed, which indicate the inhomogeneity in barrier height, might be due to various types of defects present at the GaN/Si and InN/GaN interfaces. The dependence of forward currents on both the voltage and temperatures are explained by multi step tunneling model and the activation energis were estimated to be 25meV and 100meV for n-InN/n-GaN/p–Si(100) and n-InN/n-GaN/p–Si(111) heterojunctions, respectively. Chapter 7 gives the summary of the present study and also discusses about future research directions in this area.

This thesis discusses vacuum deposited organic solar cells. It focuses on the investigation of new donor molecules blended with the standard electron acceptor C60. These donor-acceptor heterojunctions form the photoactive system of organic solar cells. In addition, the influence of the processing conditions on the morphology of the blend layers is investigated, as the morphology is crucial for an efficient generation of free charge carriers upon photon absorption. Bulk heterojunction solar cells with the donor DTDCTB are deposited at different substrate temperatures. We identify three substrate temperature regimes, discriminated by the behavior of the fill factor (FF ) as a function of the blend layer thickness. Devices deposited at RT have a maximum FF between 50 and 70 nm blend thickness, while devices deposited at 110 °C have a monotonically decreasing FF. At Tsub=85 °C, the devices have an S-kinked current-voltage curve. Grazing incidence wide angle X-ray scattering measurements show that this peculiar behavior of the FF is not correlated with a change in the crystallinity of the DTDCTB, which stays amorphous. Absorption measurements show that the average alignment of the molecules inside the blend also remains unchanged. Charge extraction measurements (OTRACE) reveal a mobility for the 110 °C device that is an order of magnitude higher than for the RT device. The difference in mobility can be explained by a higher trap density for the RT samples as measured by impedance spectroscopy. Despite slightly higher carrier lifetimes for the RT device obtained by transient photovoltage measurements, its mobility-lifetime product is still lower than for the 110 °C devices. Based on DTDCTB, three new donor materials are designed to have a higher thermal stability in order to achieve higher yields upon material purification using gradient sublimation. For PRTF, the thermal stability is increased demonstrated by a higher yield upon sublimation. However, all new materials have a reduced absorption as compared to DTDCTB, which limits the short current density, and the FF is more sensitive to an increase of the blend layer thickness. The highest power conversion efficiency is achieved for a PRTF:C60 solar cell with 3.8%. Interestingly, PRTF:C60 solar cells show exceptionally low nonradiative voltage losses of only 0.26 V. Another absorber molecule is the push-pull chromophore QM1. Scanning electron microscope (SEM) measurements show a growth of the molecule in nanowires on several substrates. The nanowires have lengths up to several micrometers and are several tens of nanometers wide. The formation of the nanowires is accompanied by a strong blue shift (650 meV) of the thin film absorption spectrum in comparison to the absorption in solution, which is attributed to H-aggregation of the molecules. Furthermore, the thin film absorption onset reaches up to 1100 nm, making the material a suitable candidate for a near infrared absorber in organic solar cells. For a solar cell in combination with C60, a power conversion efficiency of 1.9% was achieved with an external quantum efficiency of over 19% for the spectral range between 600 and 1000 nm. The method of “co-evaporant induced crystallization” as a means to increase the crystallinity of blend layers without increasing the substrate temperature during the deposition is investigated. Mass spectrometry (LDI-ToF-MS) measurements show that polydimethylsiloxane (PDMS), which is used as a co-evaporant, decomposes during the evaporation and only lighter oligomers evaporate. Quartz crystal microbalance (QCM) measurements prove that the detection of PDMS saturates at higher amounts of evaporated material. LDI-ToF-MS measurements show further that the determination of the volatilization temperature by QCM measurements is highly error prone. The method was applied to zinc phthalocyanine (ZnPc) :C60 solar cells, accepting the insertion of PDMS into the blend layer. Diffraction (GIXRD) measurements show a large increase in crystallinity. ZnPc:C60 solar cells produced by applying the method reveal a similar behavior as solar cells processed at a higher substrate temperature.

This thesis is concerned with the influence of nanoscale boundaries and interfaces upon the electronic processes that occur within the inorganic semiconductors. Inorganic semiconductor nanowires and their blends with semiconducting polymers have been investigated using state-of-the-art ultrafast optical techniques to provide information on the sub-picosecond to nanosecond photoexcitation dynamics in these systems. Chapters 1 and 2 introduce the theory and background behind the work and present a literature review of previous work utilising nanowires in hybrid organic photovoltaic devices, revealing the performances to date. The experimental methods used during the thesis are detailed in Chapter 3. Chapter 4 describes the crucial roles of surface passivation on the ultrafast dynamics of exciton formation in gallium arsenide (GaAs) nanowires. By passivating the surface states of nanowires, exciton formation via the bimolecular conversion of electron-hole plasma can observed over few hundred picoseconds, in-contrast to the fast carrier trapping in 10 ps observed in the uncoated nanowires. Chapter 5 presents a novel method to passivate the surface-states of GaAs nanowires using semiconducting polymer. The carrier lifetime in the nanowires can be strongly enhanced when the ionization potential of the overcoated semiconducting polymer is smaller than the work function of the nanowires and the surface native oxide layers of nanowires are removed. Finally, Chapter 6 shows that the carrier cooling in the type-II wurtzite-zincblend InP nanowires is reduced by order-of magnitude during the spatial charge-transfer across the type-II heterojunction. The works decribed in this thesis reveals the crucial role of surface-states and bulk defects on the carrier dynamics of semiconductor nanowires. In-addition, a novel approach to passivate the surface defect states of nanowires using semiconducting polymers was developed.

This thesis investigates the effects of low temperatures on Silicon Germanium (SiGe) Hterojunction Bipolar Transistors (HBT) BiCMOS technology. A comprehensive set of dc measurements were taken on first, second, third and fourth generation IBM SiGe technology over a range of temperatures (room temperature to 43K for first generation, and room temperature to 15K for the rest). This work is unique in the sense that this sort of comprehensive study of dc characteristics on four SiGe HBT technology generations over a wide range of temperatures has never been done before to the best of the authors knowledge.