Global ETD Search

311	Tunable broadband integrated circuits for adaptive optical interconnects Henker, Ronny, Schoeniger, David, Belfiore, Guido, Szilagyi, Lazlo, Pliva, Jan, Khafaji, Mahdi, Ellinger, Frank, Nieweglowski, Krzysztof, Bock, Karlheinz, Tiedje, Tobias 06 September 2019 (has links) To accommodate the growing demand on higher speeds, low latencies and low energy consumption, the interconnections within and between data centers are supposed to be implemented as optical fiber and waveguide interconnects in future. Optical fiber interconnects provide several advantages over their electrical counterparts as they enable higher bandwidth densities and lower losses at high frequencies over distances longer than few centimeters. However, nowadays optical fiber interconnects are usually not very energy-efficient. The systems in optical networks are mostly optimized for running at their peak performance to transmit the information with the highest available error-free data rate. But the work load of a processor system and hence of an optical link is not constant and varies over time due to the demand of the running applications and users. Therefore, optical interconnects consume the same high power at all times even if lower performance is required. In this paper a new method for the tuning of optical interconnects for on-board and board-to-board optical communication is described. In this way the performance of the transceiver systems of the link is adapted to the present transmission workload and link requirements. If for example lower data rates are required, the bandwidth and therefore the power consumption of the systems can be reduced. This tuning is enabled by the integrated circuitry of the optical link. Different methods for such an adaptive tuning are described and several practical examples are reviewed. By using adaptive bandwidth reduction in the circuits, more than 50 % of the consumed power can be saved. These savings can result in tremendous reductions of the carbon footprint and of the operating costs produced by data centers. info:eu-repo/classification/ddc/620 ddc:620
312	Macromodeling and simulation of linear components characterized by measured parameters Zhang, Mingyang, 1981- January 2008 (has links) No description available.
313	Pathways to servers of the future Lehner, Wolfgang, Nagel, Wolfgang, Fettweis, Gerhard 11 January 2023 (has links) The Special Session on “Pathways to Servers of the Future” outlines a new research program set up at Technische Universität Dresden addressing the increasing energy demand of global internet usage and the resulting ecological impact of it. The program pursues a novel holistic approach that considers hardware as well as software adaptivity to significantly increase energy efficiency, while suitably addressing application demands. The session presents the research challenges and industry perspective. info:eu-repo/classification/ddc/004 ddc:004
314	Hybrid Silicon and Lithium Niobate Integrated Photonics Chen, Li 19 May 2015 (has links) No description available. Optics Electrical Engineering Nanotechnology Electromagnetics silicon photonics integrated optics devices electro-optical devices sensors waveguides resonators optical modulators optical interconnects microwave photonics hybrid photonics integrated optics materials lithium niobate micro-fabrication
315	Designing Low Power and High Performance Network-on-Chip Communication Architectures for Nanometer SoCs Reehal, Gursharan Kaur 19 July 2012 (has links) No description available. Electrical Engineering Network-on-Chip (NoC) System-on-Chip (SoC) NoC Interconnects NoC Power Modeling Low Power NoC design Cliche Network BFT Network SPIN Network Octagon Network Asynchronous NoC design Power Models
316	Strukturierungs- und Aufbautechnologien von 3-dimensional integrierten fluidischen Mikrosystemen / Patterning and Packaging Technologies for 3 dimensional integrated fluidic micro systems Baum, Mario 02 September 2016 (has links) (PDF) Die vorliegende Arbeit beschreibt die Übertragung der aus der Siliziumtechnologie bekannten Präzision der Strukturierung und die Zuverlässigkeit der Verbindungstechnologie auf andere Materialien wie Kupfer und PMMA. Diese Untersuchung ist auf die Entwicklung der Teiltechnologien Strukturierung und Integration fokussiert und konzentriert sich insbesondere auf die Kombination von Mikrostrukturierung und dreidimensionalen Aufbautechniken einschließlich vertikaler fluidischer Durchkontaktierungen bei den Materialien Silizium, Kupfer und Kunststoff (PMMA). Eine begleitende Charakterisierung und messtechnische Bewertung gestattet die Weiterentwicklung während der Experimentedurchführung und erweitert den Stand der Wissenschaft hinsichtlich der genannten Kombinationen. / The work describes the transfer of well known high precisive and reliable micro technologies for patterning and packaging of Silicon to new materials like Copper and PMMA. This investigation is focused on special patterning technologies and system integration aspects. Furthermore the development of material-dependent micro patterning technologies and multi layer packaging techniques including vertical fluidic interconnects using materials like Silicon, Copper, and PMMA (polymer) is shown. An accompanying characterization and measurement-based evaluation enables the ongoing development while performing experimental analysis. At least a higher state of the art for these complex combinations is reached. Aufbau- und Verbindungstechnik Mikrostrukturierung Mehrlagensysteme Durchkontakte PMMA Silizium Waferbonden Fügeverfahren Packaging technologies micro patterning multi layer systems system integration through hole interconnects micro fluidics Copper PMMA Silicon joining technologies wafer bonding etching ddc:600 ddc:620 ddc:629 ddc:500 ddc:530 ddc:536 ddc:537 Systemintegration Mikrofluidik Kupfer Polymethylmethacrylate Silicium Fügen Ätzen Dichtheit Festigkeit
317	Ge/SiGe quantum well devices for light modulation, detection, and emission / Composants à puits quantiques Ge/SiGe pour la modulation, la détection et l’émission de lumière Chaisakul, Papichaya 23 October 2012 (has links) Cette thèse est consacrée à l’étude des propriétés optiques et optoélectroniques autour de la bande interdite directe des structures à puits quantiques Ge/SiGe pour la modulation, la photodétection et l’émission de lumière sur la plateforme silicium. Les principaux composants réalisés sont : un modulateur optique en guide d’onde, rapide et à faible puissance électrique, basé sur l’Effet Stark Confiné Quantiquement, les premières photodiodes Ge/SiGe dont le comportement fréquentiel est compatible avec les transmissions de données à 40 Gbit/s, et la première diode à électroluminescence à puits quantiques Ge/SiGe, base sur la transition directe de ces structures et fonctionnant à température ambiante. Les caractérisations statiques et fréquentielles ont été réalisées sur l’ensemble des composants, qui ont tous été fabriqués avec la même structure épitaxiée et les mêmes procédés de fabrication. Des modèles théoriques simples ont ensuite été utilisés pour décrire analyser les comportements observés. Finalement les études menées permettent de conclure que les structures à puits quantiques Ge/SiGe sont un candidat de choix pour la réalisation d’une nouvelle plateforme photonique à haut débit, totalement compatible avec les technologies silicium. / This PhD thesis is devoted to study electro-optic properties of Gemanium/Silicon-Germanium (Ge/SiGe) multiple quantum wells (MQWs) for light modulation, detection, and emission on Si platform. It reports the first development of high speed, low energy Ge/SiGe electro-absorption modulator in a waveguide configuration based on the quantum-confined Stark effect (QCSE), demonstrates the first Ge/SiGe photodiode with high speed performance compatible with 40 Gb/s data transmission, and realizes the first Ge/SiGe light emitting diode based on Ge direct gap transition at room temperature. Extensive DC and RF measurements were performed on each tested prototype, which was realized using the same epitaxial growth and fabrication process. Simple theoretical models were employed to describe experimental properties of the Ge/SiGe MQWs. The studies show that Ge/SiGe MQWs could potentially be employed as a new photonics platform for the development of a high speed optical link fully compatible with silicon technology. Composants à puits quantiques Ge/SiGe L’Effet Stark Confiné Quantiquement Electro-absoption Optoélectronique Les liens optiques Photonique silicium Hyperfréquence Optique intégrée Electroluminescence Diodes pin à illumination Photodiodes Ge/SiGe multiple quantum wells Quantum confined Stark effect Electro-absorption Optoelectronics Optical interconnects Silicon photonics High frequancy Integrated Optics Electroluminescence Light emitting diode Photodiode
318	Abnormal Group Delay and Detection Latency in the Presence of Noise for Communication Systems Kayili, Levent 06 April 2010 (has links) Although it has been well established that abnormal group delay is a real physical phenomenon and is not in violation of Einstein causality, there has been little investigation into whether or not such abnormal behaviour can be used to reduce signal latency in practical communication systems in the presence of noise. In this thesis, we use time-varying probability of error to determine if abnormal group delay “channels” can offer reduced signal latency. Since the detection system plays a critical role in the analysis, three important detection systems are considered: the correlation, matched filter and envelope detection systems. Our analysis shows that for both spatially negligible microelectronic systems and spatially extended microwave systems, negative group delay “channels” offer reduced signal latency as compared to conventional “channels”. The results presented in the thesis can be used to design a new generation of electronic and microwave interconnects with reduced or eliminated signal latency. electrical engineering Einstein causality causality communication systems abnormal group delay abnormal group velocity superluminal group delay superluminal group velocity time-varying error probability signal latency detection system detection latency pulse advancement spatially extended systems negative group delay negative group velocity spatially negligible systems microwave circuits microelectronic interconnects channel relativistic causality electromagnetic dispersion physics signals 0544
319	Abnormal Group Delay and Detection Latency in the Presence of Noise for Communication Systems Kayili, Levent 06 April 2010 (has links) Although it has been well established that abnormal group delay is a real physical phenomenon and is not in violation of Einstein causality, there has been little investigation into whether or not such abnormal behaviour can be used to reduce signal latency in practical communication systems in the presence of noise. In this thesis, we use time-varying probability of error to determine if abnormal group delay “channels” can offer reduced signal latency. Since the detection system plays a critical role in the analysis, three important detection systems are considered: the correlation, matched filter and envelope detection systems. Our analysis shows that for both spatially negligible microelectronic systems and spatially extended microwave systems, negative group delay “channels” offer reduced signal latency as compared to conventional “channels”. The results presented in the thesis can be used to design a new generation of electronic and microwave interconnects with reduced or eliminated signal latency. electrical engineering Einstein causality causality communication systems abnormal group delay abnormal group velocity superluminal group delay superluminal group velocity time-varying error probability signal latency detection system detection latency pulse advancement spatially extended systems negative group delay negative group velocity spatially negligible systems microwave circuits microelectronic interconnects channel relativistic causality electromagnetic dispersion physics signals 0544
320	Physical Design of Optoelectronic System-on-a-Chip/Package Using Electrical and Optical Interconnects: CAD Tools and Algorithms Seo, Chung-Seok 19 November 2004 (has links) Current electrical systems are faced with the limitation in performance by the electrical interconnect technology determining overall processing speed. In addition, the electrical interconnects containing many long distance interconnects require high power to drive. One of the best ways to overcome these bottlenecks is through the use of optical interconnect to limit interconnect latency and power. This research explores new computer-aided design algorithms for developing optoelectronic systems. These algorithms focus on place and route problems using optical interconnections covering system-on-a-chip design as well as system-on-a-package design. In order to design optoelectronic systems, optical interconnection models are developed at first. The CAD algorithms include optical interconnection models and solve place and route problems for optoelectronic systems. The MCNC and GSRC benchmark circuits are used to evaluate these algorithms. Optical interconnect Place and route Physical design Modeling Optimization Clock routing System-on-a-chip System design Computer simulation System-on-Package (SOP)

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