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This study addresses quality control for Light Emitting Diodes (LED) according to fouraspects, the power factor of LED lamps, their harmonics and total harmonic distortion (THD), the luminosity for total power to radiated power ratio. It focuses on four brands and six different LED lamps, and concludes that IKEA's LED lamps pertain as the quality lamp, with a power factor over 0.9, THD less than 4% and a power to radiated light of over 4%.

Experimental investigations of the optical properties of GaN nanostructured light emitting diode (LED) arrays are presented. Microphotoluminescence spectroscopy with pulsed and continuous wave lasers was used to probe the carrier dynamics and emission mechanisms of nanorod LED arrays fabricated by a top down etching method. Results show a possible reduction in internal electric field as nanorod diameter decreases. Localisation effects were also observed, affecting the spectral shape of the nanorod emission. Under two-photon excitation, quantum dot-like sharp spectral peaks in the PL spectra are found to exist in abundance amongst all the nanorod samples. The optical properties of these localised states, which are shown to be associated with the nanorod free-surfaces, are characterised using non-linear and time resolved spectroscopy. An investigation into spatially resolved single nanorods was also carried out. Single nanorods were isolated, and characterised using pulsed lasers. The etching is shown to increase the carrier decay life-time at extended intervals over several hundred ns. The temporal evolution and excitation power density dependence of the quantum dot-like states are also presented for the first time. The long lived localised states are thought to arise from surface effects, in particular Fermi-surface pinning, causing localisation and spatial separation of carriers. Additional work on nano-pyramid array LEDs, with quantum wells on semi-polar surfaces is also presented. Optical properties using micro-photoluminescence are compared to cathodoluminescence studies. An uneven distribution of emission wavelengths across the pyramid facet is thought to lead to an emission mechanism involving carriers transferring between multiple spatially localised states. Finally, experimental techniques and fabrication methods for future work are documented in detail.

Les diodes électroluminescentes (LEDs) constituent de nouvelles solutions pour créer des luminaires plus robustes, ayant un meilleur rendement de conversion et plus respectueuses de l'environnement. Malgré les avantages indiscutables déjà obtenus aujourd'hui, ce type de luminaire présente encore quelques optimisations possibles et offre des possibilités de fonctionnalités multiples. A travers plusieurs campagnes de tests, l'auteur montre sur des LEDs du commerce, que les points d'optimisation non encore exploités dans les luminaires commerciaux. Ces LEDs ont ainsi été testés sur de larges plages de fonctionnement du point de vue photométrique, électrique mais aussi thermique pour connaitre la reproductibilité des résultats obtenus. Ainsi les influences des conditions d'utilisation notamment en température de fonctionnement et niveaux de courant d'alimentation ont été étudiées. Pour dimensionner au mieux une alimentation électrique spécifique, une recherche de modèles de LED élémentaires a été effectuée. L'objectif est que les modèles tiennent compte des principaux paramètres mais soit suffisamment simple pour être inséré dans un environnement système afin de simuler le luminaire dans son environnement complet. Ainsi, l'étude comparative de plusieurs associations de LEDs a été effectuée permettant d'en déduire des compromis pour proposer de nouvelles solutions faibles consommatrices d'énergie à coût réduit incluant de nouveaux types d'alimentation. / Light emitting diodes (LEDs) bring new possibilities to get luminaires more robust with an improved efficiency and more environmentally respectfull. Despite the benefits already achieved today, this type of luminaire still presents some possible optimizations and provides opportunities for multiple features. Through several tests, the author shows on LEDs in market that optimization points are not operated in commercial luminaires. These LEDs have been tested over a wide range of operation in photometric, electrical but also thermal to know the reproducibility of the results. Thus the influences of operating conditions including operating temperature and supply current levels were studied. To design a specific power supply for each LED type, a search of elementary LED models was performed. The objective is to take into account the main parameters of the models but also to be enough simple to be inserted into a system environment to simulate the luminaire in whole environment. Thus, the comparative study of several associations of LEDs was conducted to deduce the best compromise and propose new solutions to reduce energy consumptions and production costs, including new types of power supply.

Organic electronics is a rapidly evolving field with vast number of applications having high potential for commercial success. Although a great progress has been made, many organic electronic applications: organic light-emitting diodes (OLEDs), organic fieldeffect transistors (OFETs), organic solar cells, etc; still require further optimization to fulfill the requirements for successful commercialization. For many applications, available at this time organic materials do not provide satisfactory performance and stability, which hinders the possibility of a large-scale production. Therefore, the key ingredient needed for a successful improvement in performance and stability of organic electronic devices is in-depth knowledge of physical and chemical properties of molecular and polymeric materials. Since many applications encompass several thin film layers made of organics, and often also inorganic materials, the understanding of both organic-organic and hybrid interfaces is yet another important issue necessary for the successful development of organic electronics. The research presented in this thesis is based mainly on photoelectron spectroscopy, which is an experimental technique especially suited to study both surfaces and interfaces of materials. In the thesis, the properties of one of the most successful polymeric materials, poly(3,4-ethylenedioxythiophene), often abbreviated as PEDOT, have been extensively studied. The research was done in close cooperation with an industrial partner – AGFA Gevaert, Belgium. The study was focused on the exploration of the intrinsic properties of the material, such as stability, morphology and conductivity. In addition, however, a possibility of alternation of these properties was also explored. This thesis reports also about investigations of the properties of various organic-organic and hybrid interfaces. The energy level alignment at such interfaces plays important role in charge injection and performance of the thin film organic-based devices. The conditions for different energy level alignment regimes at the various interfaces have been studied. The studies on interfaces were performed in close collaboration with the R&D division of DuPont Corporation, USA. This work led to the significant advances in understanding of the interface energetics and properties of industryrelevant organic materials, as represented not only by published scientific papers, but also patent applications.

Efficiency droop is a critical issue for the Group III-nitride based light-emitting diodes (LEDs) to be competitive in the general lighting application. Carrier spill-over have been suggested as an origin of the efficiency droop, and an InAlN electron-blocking layer (EBL) is suggested as a replacement of the conventional AlGaN EBL for improved performance of LED. Optimum growth condition of InAlN layer was developed, and high quality InAlN layer was grown by using metalorganic chemical vapor deposition (MOCVD). A LED structure employing an InAlN EBL was grown and its efficiency droop performance was compared with a LED with an AlGaN EBL. Characterization results suggested that the InAlN EBL delivers more effective electron blocking over AlGaN EBL. Hole-injection performance of the InAlN EBL was examined by growing and testing a series of LEDs with different InAlN EBL thickness. Analysis results by using extended quantum efficiency model shows that further improvement in the performance of LED requires better hole-injection performance of the InAlN EBL. Advanced EBL structures such as strain-engineered InAlN EBL and compositionally-graded InAlN EBLs for the delivery of higher hole-injection efficiency were also grown and tested.

We demonstrate a new approach for fabricating alternating current driven organic electroluminescent devices using the concept of doping in organic semiconductors. Doped charge transport layers are used for generation of charge carriers within the device, hence eliminating the need for injecting charge carriers from external electrodes. The device is an organic-inorganic hybrid: We exploit the mechanical strength and chemical stability of inorganic semiconductors and combine it with better optical properties of organic materials whose emission color can be chemically tuned so that it covers the entire visible spectrum. The device consists of an organic electroluminescence (EL) layer composed of unipolar/ambipolar charge transport materials doped with organic dyes (10 wt% ) as well as molecularly doped charge generation layers enclosed between a pair of transparent insulating metal oxide layers. A transparent indium doped tin oxide (ITO) layer acts as bottom electrode for light outcoupling and Aluminium (Al) as top reflective electrode. The electrodes are for applying field across the device and to charge the device, instead of injection of charge carriers in case of direct current (DC) devices. Bright luminance of up to 5000 cd m-2 is observed when the device is driven with an alternating current (AC) bias. The luminance observed is attributed to charge carrier generation and recombination, leading to formation of excitons within the device, without injection of charge carriers through external electrodes.

This dissertation includes two parallel topics: optical modeling of wavelength converters based on semiconductor optical amplifiers (SOA) and optical modeling for LEDs and solid state lighting. A steady-state numerical model of wavelength converters based on cross-gain SOAs is developed. In this model, a new model of the gain coefficient is applied. Each physical variable, such as the carrier density, gain coefficient, differential gain, and internal loss, spatially varies across the SOA cavity and is numerically calculated throughout the device. Increased accuracy over previous studies is achieved by including such spatial variations. This model predicts wavelength-dependent characteristics of a wavelength converter of the SOA in both large and small signal regimes. Some key performance factors of SOA wavelength converters. A hybrid method incorporating both guided wave optics and optical ray tracing is also developed to model LEDs and solid state lighting. This method can model either single wavelength or dual-wavelength LED structures with different die shapes and packages. The waveguide and diffraction optics are mainly used to model the near-field optics inside LED chips and its vicinity and to identify guided modes and leakage modes. Geometrical ray tracing is applied to model the far-field pattern and light interactions at different material interfaces, such as LED chip structures, LED package materials, and light scattering at those rough surfaces and textures. To improve LED light extraction efficiency, different LED die shapes and device structures can also be optimized using this method. New technologies for future research on SOAs and LEDs are also proposed.

LEDs are being developed as the next generation lighting source due to their high efficiency and long life time, with a potential to save $15 billion per year in energy cost by 2020. State of the art LEDs are capable of emitting light at ~115 lm/W and have lifetime over 50,000 hours. It has already surpassed the efficiency of incandescent light sources, and is even comparable to that of fluorescent lamps. Since the total luminous flux generated by a single LED is considerably lower than other light sources, to be competitive the total light output must be increased with higher forward currents and packages of multiple LEDs. However, both of these solutions would increase the junction temperature, which degrades the performance of the LED--as the operating temperature goes up, the light intensity decreases, the lifetime is reduced, and the light color changes. The word "junction" refers to the p-n junction within the LED-chips. Critical to the temperature rise in high powered LED sources is the very large heat flux at the die level (100-500 W/cm2) which must be addressed in order to lower the operating temperature in the die. It is possible to address the spreading requirements of high powered LED die through the use of power electronic substrates for efficient heat dissipation, especially when the die are directly mounted to the power substrate in a chipon- board (COB) architecture. COB is a very attractive technology for packaging power LEDs which can lead improved price competiveness, package integration and thermal performance. In our work high power LED-chips (>1W/die) implementing COB architectures were designed and studied. Substrates for these packaging configurations include two types of power electronic substrates; insulated-metal-substrates (IMS) and direct-bonded-copper (DBC). To lower the operating temperature both the thermal impedance of the dielectric layer and the heat spreading in the copper circuit layers must be studied. In the analysis of our architectures, several lead free solders and thermal interface materials were considered. We start with the analysis of single-chip LED package and extend the result to the multi-chip arrays. The thermal resistance of the system is only a function of geometry and thermal conductivity if temperature-independent properties are used. Thus through finite element analysis (ANSYS) the effect of geometry and thermal conductivity on the thermal resistance was investigated. The drawback of finite element analysis is that many simulations must be conducted whenever the geometry or the thermal conductivity is changed. To bypass same of the computational load, a thermal resistance network was developed. We developed analytical expressions of the thermal resistance, especially focusing on the heat spreading effect at the substrate level. Finally, multi-chip LED arrays were analyzed through finite element analysis and an analytical analysis; where die-spacing is another important factor to determine the junction temperature. With this thermal analysis, critical design considerations were investigated in order to minimize device temperatures and thereby maximizing light output while also maximizing device reliability.

The objective of the research was to develop high quality GaN epitaxial growth on alternative substrates that could result in higher external quantum efficiency devices. Typical GaN growth on sapphire results in high defect materials, typically 10⁸⁻¹⁰cm⁻², due to a large difference in lattice mismatch and thermal expansion coefficient. Therefore, it is useful to study epitaxial growth on alternative substrates to sapphire such as ZnO which offers the possibility of lattice matched growth. High-quality metalorganic chemical vapor deposition (MOCVD) of GaN on ZnO substrate is hard to grow due to the thermal stability of ZnO, out-diffusion of Zn, and H₂back etching into the sample. Preliminary growths of GaN on bare ZnO substrates showed multiple cracks and peeling of the surface. A multi-buffer layer of LT-AlN/GaN was found to solve the cracking and peeling-off issues and demonstrated the first successful GaN growth on ZnO substrates. Good quality InGaN films were also grown showing indium compositions of 17-27% with no indium droplets or phase separation. ZnO was found to to sustain a higher strain state than sapphire, and thereby incorporating higher indium concentrations, as high as 43%, without phase separation, compared to the same growth on sapphire with only 32%. Si doping of InGaN layers, a known inducer for phase separation, did induce phase separation on sapphire growths, but not for growths on ZnO. This higher strain state for ZnO substrates was correlated to its perfect lattice match with InGaN at 18% indium concentration. Transmission electron microscopy results revealed reduction of threading dislocation and perfectly matched crystals at the GaN buffer/ZnO interface showing coherent growth of GaN on ZnO. However, Zn diffusion into the epilayer was an issue. Therefore, an atomic layer deposition of Al₂O₃was grown as a transition layer prior to GaN and InGaN growth by MOCVD. X-ray and PL showed distinct GaN peaks on Al₂O₃/ZnO layers demonstrating the first GaN films grown on Al₂O₃/ZnO. X-ray photoelectron spectroscopy showed a decrese in Zn diffusion into the epilayer, demonstrating that an ALD Al₂O₃layer was a promising transition layer for GaN growth on ZnO substrates by MOCVD.