Cette thèse porte sur la caractérisation et l'étude du magnéto-transport sur les structures de type HgTe/CdTe sous contraintes développant un transport de surface topologique tout en étant isolant en volume ; on nomme cette nouvelle classe de matériau isolant topologique 3D.Je développerai dans cette thèse la caractérisation et définition d'un isolant topologique 2D/3D pour ensuite me focalise plus particulièrement sur les systèmes II-VI HgTe/CdTe.Une partie de la thèse développe les conditions de croissance réalisées au CEA/Leti ainsi que la caractérisation du matériau par rayon X. La structure de bande des surfaces est caractérisée par ARPES.Une troisième partie traite de la fabrication des barres de Hall nécessaires à la caractérisation du comportement topologique des surfaces. La partie développement expérimentale est également fournie.La dernière partie traite du magnétotransport réalisé avec ces barres de Hall à faible et fort champ magnétique. Le comportement ambipolaire, une phase de Berry non triviale, l'antilocalisation faible et l'effet Hall quantique entier dans ces structures sont abordés tout tentant de fournir une interprétation des résultats obtenus. / This report deal with caracterisation of magnetotransport in HgTe/CdTe structures bulk strained in that a topological surface transport is predicted. This new kind of material is a 3D topological insulator.In this thesis, I will explain what means 3D/2D topological insulator before focusing on II-VI system lijke HgTe/CdTe.Next, I will discuss about growing conditions performed in CEA/Leti and then material caracterisation by X-ray. Surfaces band structures were also, observed by ARPES, underligned in the report.A third part deal with Hall bars design and conception in order to emphasize topological behavior of these surfaces.The last part shows the results obtained on these Hall bars with magnetotransport at low and high magnetic field. Ambipolaire behaviour, non trivial Berry phase, weak antilocalization and the interger quantum hall effect in HgTe/CdTe structures are studied and a possible interpretation of these results are given.

High pressure, high magnetic field and low temperature techniques are required to investigate magnetic transitions and quantum critical behaviour in different ferromagnetic materials to elucidate how novel forms of superconductivity and other new states are brought about. In this project, several instruments for magneto-transport and neutron scattering measurements have been designed and built. They include inserts for a dilution refrigerator and pressure cells for resistivity, magnetic susceptibility and inelastic neutron scattering measurements. The technical drawings of the low temperature inserts and pressure cells were produced with Solid Edge computer-aided software and the performance and safety assessments were evaluated with the ANSYS finite element analysis package. The pressure cells developed include diamond anvil cells, piston cylinder cells and some auxiliary equipment. Pressure effects on the physical properties such as the electrical resistivity and magnetic ordering of some ferromagnetic materials were studied with the equipment developed. A two-axis rotating stage was developed and deployed with a dilution refrigerator combined within a superconducting magnet to measure various physical properties as a function of the orientation of the sample with respect to applied field at sub-Kelvin temperature. The rotating stage is made of Beryllium Copper (BeCu) alloy. In order to avoid the entanglement of the wires, custom-designed “flexi cables” - copper tracks printed on a Kapton foil with a yield of nearly 100% - to work with the rotating stage were manufactured. The performance of the rotating stage has been demonstrated by a quantum oscillation in the electrical resistivity study of a high field ferromagnetic superconductor URhGe. A miniature diamond anvil cell based on the turnbuckle principle has been designed. The cell, made of BeCu alloy, is 7mm in length and 7mm in diameter. It has been shown to reach a maximum pressure of 10 GPa with diamond anvils with 800 μm culets. The small dimensions of the cell allow it to fit into the existing sample environment such as Physical Properties Measurement System (PPMS) and Magnetic Properties Measurement System (MPMS) from Quantum Design, USA, and onto the customized two-axis rotating stage built for the dilution fridge. It also thermalizes rapidly allowing rapid cooling and heating during the experiments. The cell can be used to make both resistivity and magnetic susceptibility measurements. To ensure the hydrostaticity of the pressure around the sample in the turnbuckle cell, a gearbox was designed for cryogenic loading of liquid argon and room temperature gas loading of either helium or argon at a loading pressure of up to 0.3 GPa. Pressure effects on the Curie temperature of a PrNi ferromagnet were studied in a diamond anvil cell. Four-probe resistance measurements under pressures up to 9 GPa were carried out in a PPMS. The possibility of tuning the physical properties of the material by altering the pressures has been demonstrated. By analysing the results of the electrical resistivity measurements under pressures, it was concluded that the Curie temperature of PrNi increases with pressure at the rate of 0.85 K per GPa. The quantity ∆(δρ/δτ)which reflects some part of the entropy change also increases with pressure. The expected quantum critical point has not been observed in this material up to 9 GPa. A large volume high-pressure piston-cell for inelastic neutron scattering measurements has been designed and can reach a pressure of up to 1.8 GPa with a sample volume in excess of 400 mm3. The dimension of the part of the cell exposed to the neutron beam has been optimized to minimize the attenuation of the neutron beam. The novel design of the piston seal also eliminates the use of a sample container, which makes it possible to accommodate larger samples and reduces the absorption. The pressure in the cell is measured by a manganin pressure gauge placed next to the sample. The performance of the cell was illustrated by an inelastic neutron scattering study of UGe2.

This thesis focuses on investigating the possible x-ray illumination effects on the magnetic domain memory (MDM) in magnetic [Co/Pd]IrMn multilayers. In this material, MDM is induced via exchange couplings between the ferromagnetic Co/Pd layer and the antiferromagnetic IrMn layer. To carry out this investigation, we have used magneto-transport and x-ray resonant magnetic scattering. The use of magneto-transport in-situ at synchrotron x-ray scattering facility has allowed us to follow the gradual effect of x-ray illumination on the amount of exchange bias, initially present after field cooling the material. With our in-situ measurements we have been able to see that x-ray illumination does have an effect on the strength of exchange couplings in our material. To support this observation, we have also carried out complementary measurements at home in a cryomagnet, at various temperatures between 300K and 25K, and in a variety of configurations.

Perovskite rare-earth manganites of the form R1-xAxMnO3 (R – rare earth ion or Bi, A – Ca,Sr) have drawn an overwhelming research interest during the last few years owing to their extraordinary physical properties. Some of the interesting phenomena exhibited by the manganites are (a) colossal magneotresistance (CMR) (b) charge, orbital and spin ordering and (c) phase separation at nano and micron scale. The manganites are strongly correlated systems in which the charge, spin and orbital degrees of freedom are coupled. The properties of these materials are sensitive functions of external stimuli such as the doping, temperature and pressure [1-5] and have been extensively studied both experimentally and theoretically on single crystal, bulk polycrystalline and thin film forms of the samples [6-9]. Recently attention has been drawn towards the properties of nanoscale manganites. The nanoscale materials are expected to behave quite differently from extended solids due to quantum confinement effects and high surface/volume ratio. Nanoscale CMR manganites have been fabricated using diverse methods in the form of particles, wires, tubes and various other forms by different groups. It has been shown that the properties of CMR manganites can be tuned by reducing the particle size down to nanometer range and by changing the morphology [10-14]. The physical properties of antiferromagnetic insulating charge ordered manganites have been well investigated by using numerous experimental techniques on bulk solids. It is known that the charge ordered (CO) phase is ‘melted’ resulting in a ferromagnetic, metallic phase on application of high magnetic fields, electric fields, impurity ion doping, high energetic ion irradiation and by pressure [15-17]. However, no attempts have been made on the fabrication and the physical property investigations on nanoscale charge ordered manganites. Hence, we have undertaken to study the properties of charge ordered manganites prepared at nanoscale using various experimental probes. In this thesis we present the results on magnetization, magnetotransport and Electron Magnetic Resonance (EMR) (electron paramagnetic resonance in the paramagnetic phase and ferromagnetic resonance in the ferromagnetic phase) studies of the following nanoscale compounds and compare the properties with those of their bulk counterparts; (a) highly robust antiferromagnetic insulating CE –type charge ordered manganite Pr0.5Ca0.5MnO3 (PCMO) (b) highly robust antiferromagnetic insulating CE- type charge ordered manganite Nd0.5Ca0.5MnO3 (NCMO) (c) moderately robust A-type charge ordered manganite Pr0.5Sr0.5MnO3 (PSMO) (d) highly robust insulating anti-ferromagnetic charge ordered manganites Bi0.5Ca0.5MnO3 (BCMO) and Bi0.5Sr0.5MnO3 (BSMO) and (e) a CMR manganite Pr0.7Pb0.3MnO3 (PPMO). Chapter 1 of the thesis contains a brief introduction to the general features of manganites describing various interesting phenomena and the interactions underlying them. Further, we have written a detailed review on the properties of nanometric CMR manganites of various sizes and shapes. In this chapter, we have also described the experimental methodology and the analysis procedure adopted in this work Chapter 2 reports the fabrication of nanowires and nanoparticles of Pr0.5Ca0.5MnO3 (PCMO) and the results obtained from magnetization, magnetotransport and electron magnetic resonance measurements performed on nanoscale PCMO along with their comparison with those of the bulk sample. Here, the nanowires of PCMO were prepared by hydrothermal method and the nanoparticles of mean sizes 10, 20 and 40 nm were prepared by polymer assisted sol-gel method. Solid state reaction method was used to prepare the micron sized PCMO bulk material. Different techniques like XRD, TEM, EDAX and ICPAES have been used to characterize the samples. The novel result of the present investigation is the weakening of charge order and switch over from the anti-ferromagnetic phase to ferromagnetic phase in PCMO nanowires [18]. In addition, the charge order is seem to have completely suppressed in 10 nm PCMO nanoparticles as observed from the magnetization measurements. These results are particularly very significant as one needs magnetic fields of ~ 27 T to melt the charge ordered phase in PCMO. Size induced insulator-metal transition TM-I is observed in nanoscale PCMO at low temperatures accompanied by ferromagnetism. CMR of 99.7% is obtained at TM-I and at a field of 11 T. EMR studies have confirmed the presence of ferromagnetic phase at low temperatures. Temperature dependent EMR line width and intensity have shown the presence of CO phase in PCMO10 though static magnetization measurements have shown the absence of CO phase. It is found that the EMR linewidth increases with the decrease of particle size. Chapter 3 reports the fabrication of nanoparticles of Nd0.5Ca0.5MnO3 (NCMO) and the results obtained from magnetization, magnetotransport and electron magnetic resonance measurements performed on nanoscale NCMO along with their comparison with those of bulk NCMO. The nanoparticles of NCMO of mean sizes 5, 20 and 40 nm were prepared by polymer assisted sol-gel method. Solid state reaction method was used to prepare the micron sized NCMO bulk material. Different techniques like XRD, TEM, EDAX and ICPAES have been used to characterize the samples. A striking result of this particular investigation is the complete suppression of charge ordered phase in 5 and 20 nm NCMO nanoparticles as observed from the magnetization measurements [19]. Size induced insulator-metal transition TM-I is observed in nanoscale NCMO at low temperatures accompanied by ferromagnetism in accordance with Zener double exchange meachanism. CMR of 99.7% is obtained at TM-I and at a field of 11 T. EMR studies have confirmed the presence of ferromagnetic phase at low temperatures. Temperature dependent EMR line width and intensity have shown the presence of residual CO fluctuations in NCMO5 though the static magnetization measurements have shown the absence of CO phase. It is found that the EMR linewidth increases with the decrease of particle size. Low temperature X-ray diffraction measurements on NCMO20 indicate the absence of CO phase. But the preliminary results obtained from the optical spectroscopy measurements indicate the evidence for the presence of CO phase. In Chapter 4, we report the investigations on the nanoscale PSMO. PSMO nanoparticles of sizes 20, 40 and 60 nm are prepared by polymer precursor sol-gel method. PSMO nanowires of diameter 50 nm and lengths of a few microns have been prepared by hydrothermal method. The bulk polycrystalline PSMO is obtained by crushing the single crystal of the same prepared by float zone method. Various techniques like XRD, TEM, VSM, transport measurements and EMR spectroscopy have been employed to characterize and to study the size dependent magnetic, transport and electron magnetic resonance properties and to compare them with those of the bulk. Our results show that there is a disappearance of anti-ferromagnetic charge ordering phase and the appearance of a ferromagnetic phase at low temperatures in all PSMO nanoparticles and nanowires. Metal like behaviour is observed in the size induced ferromagnetic phase in nanoparticles. The EMR linewidth increases with the decrease of particle size. A comparison with the properties of the bulk material shows that the ferromagnetic transition at 265 K remains unaffected but the anti-ferromagnetic transition at TN = 150 K disappears in the nanoparticles. Further, the temperature dependence of magnetic anisotropy shows a complex behaviour, being higher in the nanoparticles at high temperatures, lower at lower temperatures in comparison with the bulk [20]. In Chapter 5, we present the fabrication, characterization and the results obtained from the magnetization and EMR measurements carried out on BCMO and BSMO nanoparticles and compare the results with those of the bulk. X-ray diffraction gives evidence for single phasic nature of the materials as well as their structures. Mono-dispersed to a large extent, isolated nanoparticles are seen in the transmission electron micrographs. High resolution electron microscopy shows the crystalline nature of the nanoparticles. Superconducting quantum interferometer based magnetic measurements from 10 K to 300 K show that these nanomanganites retain the charge ordering nature unlike the Pr and Nd based nanomanganites. The CO in Bi based manganites is thus found to be very robust consistent with the observation that magnetic fields of the order of 130 T are necessary to melt the CO in these compounds. These results are supported by electron magnetic resonance measurements [21]. In Chapter 6, we present our results on the effect of particle size on the magnetic properties of Pr0.7Pb0.3MnO3 (PPMO). PPMO nanoparticles of two different sizes (~5 nm and 30 nm) were prepared by the polymeric precursor sol-gel method. The samples are characterized by different techniques like XRD, TEM, SQUID magnetometry, EMR and optical spectroscopic measurements. It is found that the nanoparticles crystallize in the cubic perovskite structure. TEM measurements show that the 5 nm particles are uniform in size. They are also crystalline as seen by HREM and XRD measurements. SQUID magnetometry measurements have shown that the Curie temperature increases (from 220 K to 235 K) with the increase of particle size. Saturation magnetization is higher for the smaller particles studied. We have observed only one EMR signal down to 4 K in both the nanoparticles (5 and 30 nm) in contrast to the two EMR signal behaviour observed in bulk PPMO [22]. It is found that the EMR linewidth increases with the decrease of particle size in the paramagnetic phase. Temperature dependent optical spectroscopy measurements performed on 5 nm PPMO nanoparticles indicate that the insulator-metal transition temperature TM-I = 230 K, is not very different from TM-I = 235 K of the bulk sample [23] The thesis concludes with a brief writeup summarizing the results and pointing out possible future directions of research in the area.

Ce travail porte sur l'étude de la levée de dégénérescence de spin dans le régime Hall quantique. Des mesures de magnétotransport à très basse température sont mises en oeuvre sur un ensemble d'hétérostructures AlGaAs/GaAs, afin de caractériser la densité d'états électronique sous champ magnétique et les interactions entre électrons. Les interactions d'échange se révèlent être principalement déterminées par la densité électronique, et deviennent de plus en plus importantes lorsque celle-ci diminue dans le domaine (1.10^11-1.10^12cm^-2). Un modèle simple sans paramètre d'ajustement prédit correctement le champ magnétique nécessaire pour observer la levée de dégénérescence de spin, démontrant que celle-ci est le résultat d'une compétition entre le coût de retournement des spins, induit par le désordre<br /> du système, et le gain d'énergie d'échange associé à l'état polarisé en spin. Dans ce modèle, l'énergie Zeeman ne joue aucun rôle, si bien que l'apparition de l'état polarisé en spin dans le plus haut niveau de Landau occupé peut être interprétée comme une transition de Stoner induite par le champ magnétique. Le cas d'une énergie Zeeman non-nulle, abordé en introduisant un champ magnétique supplémentaire dans le plan du gaz électronique bidimensionnel, peut également être décrit dans le cadre de ce modèle sans paramètre d'ajustement, confirmant la validité de l'approche initiale.

The effects of optical heating via infrared free carrier absorption on the electron magneto-transport properties of n-InSb at helium temperatures have been studied for the first time. Oscillatory photoconductivity (OPC) type structure is seen in the photon energy dependence of the transport properties. A C0₂ laser (hω = 115 to 135 meV) was used as the optical source. Concentrations between 1 x 10¹⁵ cm⁻³ and 2 x 10¹⁶ cm⁻³ were studied. The conclusions of this study are that the energy relaxation of high energy photoexcited electrons, generated by free carrier absorption of C0₂ laser radiation in degenerate n-InSb at liquid helium temperatures, is by emission of a maximum number of optical phonons, and that this relaxation mechanism produces OPC type structure in the photon energy dependence of the electron temperature of the conduction band electron gas. This structure is seen, therefore, in the transport properties of the sample, including the Shubnikovde Haas effect, the effective absorption coefficient, and the photoconductivity (mobility) response (lower concentrations only). In addition, the highest concentration studied, nₑ = ~2 x 10¹⁶ cm⁻³, sets an experimental lower limit on the concentration at which electron-electron scattering will become the dominant energy relaxation mechanism for the photoexcited electrons, since OPC effects were present in this sample.

Ce travail de thèse a pour but de clarifier le mécanisme de la transition métal-isolant (MIT) pilotée par le dopage électronique x du système quasi-2D BaCo1-xNixS2.Une optimisation de la croissance de monocristaux pour des taux de substitution allant de x = 0 à 1 a été nécessaire. Cela a permis de synthétiser de manière reproductible des monocristaux non lacunaires en soufre, de taille millimétrique et de haute qualité. L'analyse structurale de ces cristaux a permis d'établir une relation précise entre les distances métal-soufres et le taux de substitution x.Le travail de thèse a ensuite été focalisé sur l'étude des propriétés électroniques et de transport de BaNiS2 la phase métallique précurseur de la MIT. Les études de la structure électronique par photoémission résolue en angle (ARPES) et par des mesures d'oscillations quantiques ont révélées une surface de Fermi composée d'une poche d'électrons 2D centrée en Γ(Z) et d'une poche de trous positionnée à mi-distance suivant ΓM(ZA) quasi-2D avec une dispersion conique à kz =0. Une levée de dégénérescence des bandes à Γ et à X révèle la présence inattendue et importante d'un couplage spin-orbite et d'un couplage Rashba. Les mesures de magnétotransport ont pu être expliquées par un modèle qui implique que BaNiS2 est un semi-métal compensé avec trois voies de conduction. Des trous p1 et électrons e1 largement majoritaires et présentant des mobilités modérées ainsi que des trous p2 minoritaires de très haute mobilité.La cohérence de l'ensemble des mesures donne une image précise de la surface de Fermi de BaNiS2 et de ses propriétés électroniques plus bidimensionnelle que celle prévu par le calculs de bandes conventionnelle. / This work aims to clarify the mechanism of the metal-insulator transition (MIT) driven by doping x in the quasi-2D BaCo1-xNixS2 system. First of all, synthesize of high quality single crystals with substitution level x varying in the full 0 - 1 range was fundamental. It appears that the mechanism of the metal-insulator transition is associated to a continuous modification of metal-sulfurs distances. Then, we focus on an investigated the electronic properties of BaNiS2, precursor metallic phase of the MIT. Studies of the electronic structure of BaNiS2 by angle-resolved photoemission spectroscopy (ARPES) and by quantum oscillation measurements reveal the existence of two pockets at the Fermi surface: an electron-like 2D pocket centered in Γ(Z) and a hole-like pocket quasi-2D at mi-distance along ΓM(ZA) with a conic-like dispersion in kz = 0 . Furthermore, data also show a very large spin-orbit splitting at Γ and Z which is unexpected in a 3d metal compound. From previous studies, we developed a model to explain magnetotransport properties of BaNiS2. This model involves that BaNiS2 is a three carriers compensated metal: a majority holes p1 and electrons e1 carriers with moderate mobilities and a minor holes p2 carriers with a high mobility. The two different holes carries observed in magneto-transport could be explain by an important variation of the hole-like pocket dispersion along kz. Measures realized during this thesis are consistent and allowed to know precisely the form of the Fermi surface of BaNiS2 and its electronic properties which are more bi-dimensional than predict by conventional calculation.

La modulation de la densité de charge est un aspect important de l'étude de les transitions de phase électroniques ainsi que des propriétés électroniques des matériaux et il est à la base de plusieurs applications dans la micro-électronique. L'ajustement de la densité des porteurs de charge (dopage) peut être fait par voie chimique, en ajoutant des atomes étrangers au réseau cristallin du matériau ou électrostatiquement, en créant un accumulation de charge comme dans un Transistor é Effet de Champ. Cette dernier m ethode est réversible et particuliérement appropriée pour les matériaux bidimensionnels (2D) ou pour des couches ultra-minces. Le Dopage par Charge d'Espace est une nouvelle technique inventée et développée au cours de ce travail de thèse pour le dopage electrostatique de matériaux déposés sur la surface du verre. Une charge d'espace est créée à la surface en provoquant le mouvement des ions sodium présents dans le verre sous l'effet de la chaleur et d'un champ électrique extérieur. Cette espace de charge induit une accumulation de charge dans le matériau déposé sur la surface du verre, ce qui peut être supérieure à 10^14/cm^2. Une caractérisation détaillée faite avec mesures de transport, effet Hall, mesures Raman et mesures de Microscopie a Force Atomique (AFM) montrent que le dopage est réversible, bipolaire et il ne provoque pas des modifications chimiques. Cette technique peut être appliquée a des grandes surfaces, comme il est montré pour le cas du graph ene CVD. Dans une deuxiéme partie le dopage par espace de charge est appliqué à des couches ultra-minces (< 40 nm) de ZnO_(1-x). Le résultat est un abaissement de la résistance par carré de 5 ordres de grandeur. Les mesures de magnéto-transport faites à basse température montrent que les électrons dop es sont confinés en deux dimensions. Une transition remarquable de la localisation faible à l'anti-localisation est observée en fonction du dopage et de la température et des conclusions sont tirées à propos des phénoménes de diffusion qui gouverne le transport électronique dans des diff erentes conditions dans ce matériau. / Carrier modulation is an important parameter in the study of the electronic phase transitions and the electronic properties of materials and at the basis for many applications in microelectronics. The tuning of charge carrier density (doping) can be achieved chemically, by adding foreign atoms to the crystal structure of the material or electrostatically, by inducing a charge accumulation like in a Field Eect Transistor device. The latter method is reversible and particularly indicated for use in two dimensional (2D) materials or ultra-thin films. Space Charge Doping is a new technique invented and developed during this thesis for the electrostatic doping of such materials deposited on a glass surface. A space charge is created at the surface by causing sodium ions contained in glass to drift under the Eect of heat and an external electric field. This space charge in turn induces a charge accumulation in the material deposited on the glass surface which can be higher than 10^14/cm^2. Detailed characterization using transport, Hall effect, Raman and AFM measurements shows that the doping is reversible, ambipolar and does not induce chemical changes. It can be applied to large areas as shown with CVD graphene. In a second phase the space charge doping method is applied to polycrystalline ultra-thin films (< 40 nm) of ZnO_(1-x). A lowering of sheet resistance over 5 orders of magnitude is obtained. Low temperature magneto-transport measurements reveal that doped electrons are confined in two dimensions. A remarkable transition between weak localization and anti-localization isobserved as a function of doping and temperature and conclusions are drawn concerning the scattering phenomena governing electronic transport under different conditions in this material.

Dans un effort de combiner le bénéfice des propriétés magnétiques et électroniques, les semi-Conducteurs magnétiques dilués sont projetés pour être à la base de composants reliant dans leur fonctionnement, à la fois la charge et le spin des électrons. Par l'utilisation d'une technique de magnétométrie à effet Hall, on a fait la caractérisation de ces matériaux par la détermination de l'orientation magnétique à basse température. Nous nous sommes aussi intéressés aux matériaux moléculaires à transition de spin (SCO). La technologie des capteurs magnétiques offre une voie vers la vulgarisation des techniques de détection par l'utilisation de systèmes rapides et sensibles. La détection de la transition de spin des nanoparticules est réalisée par un capteur à effet Hall planaire, fabriqué à base de multicouches magnétiques. Le travail effectué est pionnier dans le domaine de la détection nano magnétique, il ouvre la voie à de nouvelles perspectives dans la recherche fondamentale et dans le développement technologique des capteurs magnétiques. Des améliorations du dispositif ont été réalisées et d'autres sont en stage de développement pour l'amélioration de la sensibilité et la réduction du bruit. L'optimisation devrait fournir un dispositif original de détection de transition de spin des nanoparticules à température ambiante. / In an effort to combine the benefits of magnetic and electronic properties, diluted magnetic semiconductors are projected to be the basis for devices combining in their operation, both the charge and spin of electrons. Using Hall Effect magnetometer, a characterization of these materials is done by determining the magnetic orientation at low temperatures. We were also interested in molecular materials spin crossover. The magnetic sensor technology provides a path to the extension of detection techniques through the use of rapid and sensitive systems. The detection of the spin crossover nanoparticles is achieved by a planar Hall Effect sensor, made from magnetic multilayers. The work is a pioneer in the field of nano magnetic detection; it opens up new perspectives in basic research and the technological development of magnetic sensors. Improvements of the device have been completed and others are under development in order to improve sensitivity and reduce noise. The optimization should provide a novel system for detecting spin transition nanoparticles at room temperature.

Previous studies have demonstrated the sensitivity of the amplitude of the microwave radiation-induced magnetoresistance oscillations to the microwave polarization. These studies have also shown that there exists a phase shift in the linear polarization angle dependence. But the physical origin of this phase shift is still unclear. Therefore, the first part of this dissertation analyzes the phase shift by averaging over other small contributions, when those contributions are smaller than experimental uncertainties. The analysis indicates nontrivial frequency dependence of the phase shift. The second part of the dissertation continues the study of the phase shift and the results suggest that the specimen exhibits only one preferred radiation orientation for different Hall-bar sections. The third part of the dissertation summarizes our study of the Hall and longitudinal resistance oscillations induced by microwave frequency and dc bias at low filling factors. Here, the phase of these resistance oscillations depends on the contact pair on the device, and the period of oscillations appears to be inversely proportional to radiation frequency.