Thin-film theorems are well developed and so are the fabrication processes. Yet under some special conditions, traditional methods (such as the ABCD matrix and the transmission matrix methods) will lead to a serious numerical error. In this thesis, we propose a new method called Couple E/H field formulation, which will overcome this numerical problem in simulating characteristics of complex multi-layered structures. We have verified both the algorithm and its results with the traditional techniques. By extending the impedance matching principle, we came out with a multi-layer anti-reflection coating design optimized for a time-harmonic plane wave incidence with any incident angle. Such a design allows for more plane waves with adjacent angles to pass through the coating layers with minimal reflection. Furthermore, we apply this AR coating design to facets of semiconductor lasers. Our calculation shows that multi-layer coating does a better job than a single layer coating. The reflectivity of a laser diode from single layer coating 0.085% to 5 layer coating 0.056%, which is a 33% improvement.

The objectives of this research are to accomplish Multilayer Ceramic Capacitors, MLCCs used Temperature compensated type Ceramic powder and different design and size to confer its characteristic. The first to speak about Taiwan capacitors property development to point Multilayer Ceramic Capacitors from 1960 to recently.The manufacture procedure from Normal Metal Electronic procedure change to Base Metal Electronic procedure. The second to quote the relation document to explain Temperature compensated type Multilayer Ceramic Capacitors characteristics and main electric characteristics and the related factors such as Frequency, Test Signal Level, DC Bias, Temperature, Time, Insulation resistance and Break down voltage. The last from sample manufacture flow and structure analysis to electric characteristic measure analysis and result to discuss opposite factor characteristics. To bring up develop direction and reference material.

In order to construct the integrated circuit with high efficiency, the size of the semiconductor devices becomes smaller and smaller. The surface of the chip is unable to offer enough area for devices interconnecting, that the Ultra Large Scale Integration (ULSI) has to adopt the construction of multilayer metal conductor line, and to decrease it¡¦s connects. However, the RC delay time becomes a main issue to limiting semiconductor speed when the electron signal was transferred between two metal connects. In order to solve the problem of RC delay, and to lower resistivity, copper (1.7 £g£[-cm) is applied instead of Aluminum (2.7 £g£[-cm) at present. In additation, to lower the capacitance, the low-k material has taken place SiO for reducing the electric capacity. In this work, the capacitance and current of MIM(Metal-Insulator-Metal) of interconnecting circuit were investigated under bending stress. SiOC of OSG (Organic silicate glass) layer has applied to a MIM structure. In order to apply the strain in devices, the device was bended to a fixed curvature for compressed and tensile stress. By bending the device, the capacitance and leakage current I-V & C-V were analyzed and compared with the unstressed SAMPLE of I-V and C-V at high temperature, too. The result reveals both of Schottky and Poole-Frenkel conduction mechanism existing in device under a high electric field of 1800 V/cm1/2, which indicates the theoretical treatment is unappropriate for the interpretation of the leakage current mechanism.

Elektronenmikroskopie zum Wachstum von Chromdisilizid in Multilagen (nm-Bereich). Variation der abgeschiedenen Zusammensetzung und Tempertemperatur.

The aim of the present work is to find out a method for ultrasonic testing of composite fiber-reinforced multilayer polymer materials.

High energy neutron and charged particle radiation cause microstructural and mechanical degradation in structural metals and alloys, such as phase segregation, void swelling, embrittlement and creep. Radiation induced damages typically limit nuclear materials to a lifetime of about 40 years. Next generation nuclear reactors require materials that can sustain over 60 - 80 years. Therefore it is of great significance to explore new materials with better radiation resistance, to design metals with favorable microstructures and to investigate their response to radiation. The goals of this thesis are to study the radiation responses of several nanostructured metallic thin film systems, including Ag/Ni multilayers, nanotwinned Ag and nanocrystalline Fe. Such systems obtain high volume fraction of boundaries, which are considered sinks to radiation induced defects. From the viewpoint of nanomechanics, it is of interest to investigate the plastic deformation mechanisms of nanostructured films, which typically show strong size dependence. By controlling the feature size (layer thickness, twin spacing and grain size), it is applicable to picture a deformation mechanism map which also provides prerequisite information for subsequent radiation hardening study. And from the viewpoint of radiation effects, it is of interest to explore the fundamentals of radiation response, to examine the microstructural and mechanical variations of irradiated nanometals and to enrich the design database. More importantly, with the assistance of in situ techniques, it is appealing to examine the defect generation, evolution, annihilation, absorption and interaction with internal interfaces (layer interfaces, twin boundaries and grain boundaries). Moreover, well-designed nanostructures can also verify the speculation that radiation induced defect density and hardening show clear size dependence. The focus of this thesis lies in the radiation response of Ag/Ni multilayers and nanotwinned Ag subjected to charged particles. The radiation effects in irradiated nanograined Fe are also investigated for comparison. Radiation responses in these nanostructured metallic films suggest that immiscible incoherent Ag/Ni multilayers are more resistant to radiation in comparison to their monolithic counterparts. Their mechanical properties and radiation response show strong layer thickness dependence in terms of radiation hardening and defect density. Coherent twin boundaries can interact with stacking fault tetrahedral and remove them effectively. Twin boundaries can actively absorb radiation induced defects and defect clusters resulting in boundary migration. Size dependence is also found in nanograins where fewer defects exhibit in films with smaller grains.

Το περιεχόμενο του συγκράματος ασχολείται με τη μελέτη αρχιτεκτονικών διαστρωμάτωσης για τη διερεύνηση των λειτουργικών απαιτήσεων των ασύρματων δικτύων επόμενης γενιάς. Αφού γίνει η μελέτη των τεχνικών καταχώρισης συχνοτήτων στα κυτταρικά συστήματα των κινητών επικοινωνιών κατόπιν αναλύονται οι λειτουργικές διαδικασίες των κυτταρικών συστημάτων κινητής τηλεφωνίας όπως και το μοντέλο καταχώρισης ραδιοπόρων το οποίο βασίζεται στις τεχνικές Erlang. Ακολούθως προτείνονται μέσω μαθηματικής ανάλυσης διεπίπεδες τεχνικές μεταγωγής. Εν συνεχεία, παρουσιάζεται η εφαρμογή της πολυεπίπεδης αρχιτεκτονικής στα σύγχρονα κυτταρικά συστήματα όπου αναλύεται η αρχιτεκτονική UMTS/HAP. Στα αποτελέσματα της προσομοίωσης που κάνουμε στο σύστημα μας, παρατηρούμε την αισθητή μείωση της dropping/blocking πιθανότητας όταν εφαρμοστεί η προτεινόμενη τεχνική. / The subject of diploma is about studying architectures of multilayrer in next generation wireless networks. After we study registration techniques in cellar systems of wireless communication systems, we analyze operating processes of mobile network and sources registration based on Erlang's techniques. after all, it is presented the application of multilayer architecture in modern cell systems where architecture UNTS/HAP is analyzed. In the results of our simulation we see that the blocking/dropping probability is decreased when out technique is enabled

Panama has a warm, wet, tropical climate. Unlike countries that are farther from the equator, Panama does not experience seasons marked by changes in temperature. Instead, Panama's seasons are divided into Wet and Dry. The Dry Season generally begins around mid-December, but this may vary by as much 3 to 4 weeks. Around this time, strong northeasterly winds known as "trade winds" begin to blow and little or no rain may fall for many weeks in a row. Daytime air temperatures increase slightly to around 30-31 Celsius (86-88 Fahrenheit), but nighttime temperatures remain around 22-23 Celsius (72-73 Fahrenheit). Relative humidity drops throughout the season, reaching average values as low as 70 percent. The Wet Season usually begins around May 1, but again this may vary by 1 or 2 weeks. May is often one of the wettest months, especially in the Panama Canal area, so the transition from the very dry conditions at the end of the Dry Season to the beginning of Wet Season can be very dramatic. With the arrival of the rain, temperatures cool down a little during the day and the trade winds disappear. Relative humidity rises quickly and may hover around 90 to 100% throughout the Wet Season. Drought forecasts can be an effective tool for mitigating some of the more adverse consequences of drought. The presented thesis compares forecast of drought indices based on seven different models of artificial neural networks model. The analyzed drought indices are SPI and SPEI-ANN Drought forecast, and was derived for the period of 1985-2014 on Panama Canal basin; I've selected seven of sixty-one Hydro-meteorological networks, existing in the Panama Canal basin. The rainfall is 1784 mm per year. The meteorological data were obtained from the PANAMA CANAL AUTHORITY, Section of Water Resources, and Panama Canal Authority, Panama. The performance of all the models was compared using ME, MAE, RMSE, NS, and PI. The results of drought indices forecast, explained by the values of seven model performance indices, show, that in Panama Canal has problem with the drought. Even though The Panama is generally seen as a wet country, droughts can cause severe problems. Significant drought conditions are observed in the index based on precipitation and potential evaporation found in this thesis; The Standardized Precipitation Index (SPI), the Standardized Precipitation Evapotranspiration Index (SPEI), were used to quantify drought in the Panama Canal basin, Panama Canal, at multiple time scales within the period 1985-2014. The results indicate that drought indices based on different variables show the same major drought events. Drought indices based on precipitation and potential evaporation are more variable in time while drought indices based on discharge. Spatial distribution of meteorological drought is uniform over Panama Canal.

Fundação de Amparo à Pesquisa do Estado do Rio de Janeiro / Neste trabalho estudamos o problema da segregação de impurezas substitucionais em sistemas nanoestruturados metálicos formados pela justaposição de camadas (multicamadas). Utilizamos o modelo de ligações fortes (tight-binding) com um orbital por sítio para calcular a estrutura eletrônica desses sistemas, considerando a rede cristalina cubica simples em duas direções de crescimento: (001) e (011). Devido à perda de simetria do sistema, escrevemos o hamiltoniano em termos de um vetor de onda k, paralelo ao plano, e um ındice l que denota um plano arbitrario do sistema. Primeiramente, calculamos a estrutura eletrônica do sistema considerando-o formado por átomos do tipo A e, posteriormente, investigamos as modificações nessa estrutura eletrônica ao introduzirmos uma impureza do tipo B em um plano arbitrário do sistema. Calculamos o potencial introduzido por esta impureza levando-se em conta a neutralidade de carga através da regra de soma de Friedel. Calculamos a variação da energia eletrônica total ΔEl como função da posição da impureza. Como substrato, consideramos sistemas com ocupações iguais a 0.94 e 0.54 elétrons por banda, o que dentro do modelo nos permite chamá-los de Nie Cr. As impurezas sao tambem metais de transição - Mn, Fee Co. Em todos os casos investigados, foi verificado que a variação de energia eletrônica total apresenta um comportamento oscilatorio em função da posição da impureza no sistema, desde o plano superficial, até vários planos interiores do sistema. Como resultado, verificamos a ocorrencia de planos mais favoráveis à localização da impureza. Ao considerarmos um número relativamente grande de planos, um caso em particular foi destacado pelo aparecimento de um batimentono comportamento oscilatório de ΔEl. Estudamos também o comportamento da variação da energia total, quando camadas (filmes) são crescidas sobre o substrato e uma impureza do mesmo tipo das camadas é colocada no substrato. Levamos em conta a diferença de tamanho entre os átomos do substrato e os átomos dos filmes. Analisamos ainda a influência da temperatura sobre o comportamento oscilatório da energia total, considerando a expansão de Sommerfeld. / In this work we study the problem of substitutional impurity segregation in metallic nanostructured systems consisting of juxtaposition of layers (multilayer). Using a single band tight-binding model we calculate the electronic structure of these systems, considering a simple cubic lattice in two growth directions: (001) and (011). Due to the loss of symmetry of the system, the Hamiltonian is written as a function of a wave vector k parallel to the plane, and an index l which denotes an arbitrary plane of the system. Firstly, we calculate the electronic structure of the system with atoms of type A and investigate the changes in the electronic structure when an impurity of type B is introduced in an arbitrary plane of the system. We calculate the potential introduced by this impurity taking into account the charge neutrality through the Friedel sum rule. We also calculate the total electronic energy variation ΔEl as a function of the impurity position. As a substrate we consider systems with occupations equal to 0.94 and 0.54 per band, simulating Niand Crsystems in our model. The impurities are also transition metals - Mn, Feand Co. In all investigated cases, it was verified that the variation of the total electronic energy presents an oscillatory behavior that depends on the position in which the impurity is placed, from the surface plane up to several inner planes of the system. As a result, in all cases it has been verified the occurrence of more favorable planes to the location of impurity. When considering a relatively large number of planes, one case in particular drew attention by a remarkable beatingon the oscillatory behavior of ΔEl. We also study the behavior of the total electronic energy variation, when layers (films) are grown up on the substrate and an impurity of the same type of the layers is placed in the substrate. In our model calculation, a difference between the size of the atoms of the substrate and the film is taken into account. We also investigate the influence of temperature on the total electronic energy oscillatory behavior, considering the Sommerfeld expansion.

Fundação de Amparo à Pesquisa do Estado do Rio de Janeiro / Neste trabalho estudamos o problema da segregação de impurezas substitucionais em sistemas nanoestruturados metálicos formados pela justaposição de camadas (multicamadas). Utilizamos o modelo de ligações fortes (tight-binding) com um orbital por sítio para calcular a estrutura eletrônica desses sistemas, considerando a rede cristalina cubica simples em duas direções de crescimento: (001) e (011). Devido à perda de simetria do sistema, escrevemos o hamiltoniano em termos de um vetor de onda k, paralelo ao plano, e um ındice l que denota um plano arbitrario do sistema. Primeiramente, calculamos a estrutura eletrônica do sistema considerando-o formado por átomos do tipo A e, posteriormente, investigamos as modificações nessa estrutura eletrônica ao introduzirmos uma impureza do tipo B em um plano arbitrário do sistema. Calculamos o potencial introduzido por esta impureza levando-se em conta a neutralidade de carga através da regra de soma de Friedel. Calculamos a variação da energia eletrônica total ΔEl como função da posição da impureza. Como substrato, consideramos sistemas com ocupações iguais a 0.94 e 0.54 elétrons por banda, o que dentro do modelo nos permite chamá-los de Nie Cr. As impurezas sao tambem metais de transição - Mn, Fee Co. Em todos os casos investigados, foi verificado que a variação de energia eletrônica total apresenta um comportamento oscilatorio em função da posição da impureza no sistema, desde o plano superficial, até vários planos interiores do sistema. Como resultado, verificamos a ocorrencia de planos mais favoráveis à localização da impureza. Ao considerarmos um número relativamente grande de planos, um caso em particular foi destacado pelo aparecimento de um batimentono comportamento oscilatório de ΔEl. Estudamos também o comportamento da variação da energia total, quando camadas (filmes) são crescidas sobre o substrato e uma impureza do mesmo tipo das camadas é colocada no substrato. Levamos em conta a diferença de tamanho entre os átomos do substrato e os átomos dos filmes. Analisamos ainda a influência da temperatura sobre o comportamento oscilatório da energia total, considerando a expansão de Sommerfeld. / In this work we study the problem of substitutional impurity segregation in metallic nanostructured systems consisting of juxtaposition of layers (multilayer). Using a single band tight-binding model we calculate the electronic structure of these systems, considering a simple cubic lattice in two growth directions: (001) and (011). Due to the loss of symmetry of the system, the Hamiltonian is written as a function of a wave vector k parallel to the plane, and an index l which denotes an arbitrary plane of the system. Firstly, we calculate the electronic structure of the system with atoms of type A and investigate the changes in the electronic structure when an impurity of type B is introduced in an arbitrary plane of the system. We calculate the potential introduced by this impurity taking into account the charge neutrality through the Friedel sum rule. We also calculate the total electronic energy variation ΔEl as a function of the impurity position. As a substrate we consider systems with occupations equal to 0.94 and 0.54 per band, simulating Niand Crsystems in our model. The impurities are also transition metals - Mn, Feand Co. In all investigated cases, it was verified that the variation of the total electronic energy presents an oscillatory behavior that depends on the position in which the impurity is placed, from the surface plane up to several inner planes of the system. As a result, in all cases it has been verified the occurrence of more favorable planes to the location of impurity. When considering a relatively large number of planes, one case in particular drew attention by a remarkable beatingon the oscillatory behavior of ΔEl. We also study the behavior of the total electronic energy variation, when layers (films) are grown up on the substrate and an impurity of the same type of the layers is placed in the substrate. In our model calculation, a difference between the size of the atoms of the substrate and the film is taken into account. We also investigate the influence of temperature on the total electronic energy oscillatory behavior, considering the Sommerfeld expansion.