Carbon nanotubes are appealing materials for nanofabrication due to their unique properties and structures. However, for carbon nanotubes to be used in mass-fabricated devices, precise control of nanotube orientation and location on surfaces is critical. I have developed a technique to align single-walled carbon nanotubes (SWNTs) on surfaces from a droplet of nanotube suspension under gas flow. Fluid motion studies indicate that alignment is likely due to circulation of SWNTs in the droplet. My work provides a facile method for generating oriented nanotubes for nanodevice applications. I have also devised an approach for localizing SWNTs onto 1-pyrenemethylamine-decorated DNA on surfaces. I found that 63% of SWNTs on surfaces were anchored along DNA, and these nanotubes covered ~5% of the total DNA length. This technique was an initial demonstration of DNA-templated SWNT localization. In an improved method to localize SWNTs on DNA templates, dodecyltrimethylammonium bromide was utilized to suspend SWNTs in aqueous media and localize them on DNA electrostatically. SWNT positioning was controlled by the surface DNA arrangement, and the extent of deposition was influenced by the SWNT concentration and number of treatments. Under optimized conditions, 83% of the length of surface DNAs was covered with SWNTs, and 76% of the deposited SWNTs were on DNA. In some regions, nearly continuous SWNT assemblies were formed. This approach should be useful for the fabrication of nanotube nanowires in nanoelectronic circuits. Using my improved procedures, I have localized SWNTs on DNA templates across electrodes and measured the electrical properties of DNA-templated SWNT assemblies. When a DNA-templated SWNT was deposited on top of and bridging electrodes, the measured conductance was comparable to literature values. In contrast, SWNTs with end-on contacts to the sides of electrodes had conductances hundreds of times lower than literature values, probably due to gaps between the SWNT ends and the electrodes. This work provides a novel approach for localizing SWNTs across contacts in a controlled manner. These results may be useful in the fabrication of nanoelectronic devices such as transistors with SWNTs as active components. Moreover, this approach could be valuable in arranging SWNTs as electrical interconnects for nanoelectronics applications.

The realm of the nano-world begins when things start getting smaller in size than one thousandth of the thickness of the human hair. Surface patterning at the nanoscale has started to find applications in information storage, self-cleaning of surfaces due to the "lotus effect", biocompatible materials based on surface roughness and many more. Several methods such as particle-beam writing, optical lithography, stamping and various kinds of self-assembly are widely used to serve the purpose of patterning smaller surface structures. However, globally much research is going into developing more efficient, reproducible and simple methods of patterning surfaces and in better controlling the order of these nanostructures. Researchers have always looked upon Nature to get inspiration and to mimic its model in engineering novel architectures. One of the methods used by this greatest artist (Nature) to make beautiful patterns around is through reaction diffusion based non-linear processes. Non-linear systems driven away from equilibrium sustain pattern only during the continuous dissipation of a regular flow of energy and are different from equilibrium processes that are converging towards a minimum in free energy (a. k. a. self-assembly). Dissipative pattern formation from micrometer to kilometers scale has been known but ordered patterns at nanoscale have never been achieved. In the process of thoroughly characterizing suitable substrates for nanoelectronics applications, we came across a remarkable process leading to the formation of highly ordered arrays of dimples on tantalum. The pattern formation happens in a narrow electrochemical windows which are functions of many parameters such as concentration, external applied voltage, temperature etc. After investigating the formation of dimples by performing spatio-temporal studies, we found that the underlying principles behind this unique way of engineering nano-structures have their roots in nonlinear interaction/reaction electro-hydrodynamics. We then have demonstrated the generality of this process by extending it to titanium, tungsten and zirconium surfaces. The pattern similar to Rayleigh-Bernard convection cells originates inside the electrochemical solution due to coupling among electrolyte ions during their migration across the electrochemical double layer (Helmholtz layer) and simultaneously imprints on the surface due to dissolution of metal oxide via etching. Based on these results we further postulate that, given appropriate electropolishing chemistry; these patterns can be formed on virtually any metal or semiconductor surface. The application of these nanostructures as nanobeakers for placing metal nanoparticles is also elucidated Highly porous materials such as mesoporous oxides are of technological interest for catalytic, sensing, optical and filtration applications: the mesoporous materials (with pores of size 2-50 nm) in the form of thin films can be used as membranes due large surface area. In the second part of this thesis, a new technique of making detachable ultrathin membranes of transition metal oxides is presented. The underlying concepts behind the detachment of membranes from the underlying substrate surface are discussed. The control on the size of the pores by modulating the voltage and concentration is also elucidated. The method is generalized by showing the similar detachment behavior on other metal oxide membranes.Thus, the results of this work introduces new techniques of engineering nanostructures on surfaces based on reaction-diffusion adaptive systems and contribute to the better understanding of electrochemical self-organization phenomena due to migration coupling induced electro-hydrodynamics. / Thesis / Doctor of Philosophy (PhD)

The push for electronic devices on smaller and smaller scales has driven research in the direction of transition metal dichalcogenides (TMD) as new ultra-thin semiconducting materials. These ‘two-dimensional' (2D) materials are typically on the order of a few nanometers in thickness with a minimum all the way down to monolayer. These materials have several layer-dependent properties such as a transition to direct band gap at single-layer. In addition, their lack of dangling bonding and remarkable response to electric fields makes them promising candidates for future electronic devices. For the purposes of this work, two 2D TMDs were studied, MoS2 and MoTe2. This dissertation comprises of three sections, which report on exploration of charge lifetimes, investigation environmental stability at elevated temperatures in air, and establishing feasibility of UV laser annealing for large area processing of 2D TMDs, providing a necessary knowledge needed for practical use of these 2D TMDs in optoelectronic and electronic devices. (1) A study investigating the layer-dependence on the lifetime of photo-generated electrons in exfoliated 2D MoTe2 was performed. The photo-generated lifetimes of excited electrons were found to be strongly surface dependent, implying recombination events are dominated by Shockley-Read-Hall effects (SRH). Given this, the measured lifetime was shown to increase with the thickness of exfoliated MoTe¬2; in agreement with SRH recombination. Lifetimes were also measured with an applied potential bias and demonstrated to exhibit a unique voltage dependence. Shockley-Read-Hall recombination effects, driven by surface states were attributed to this result. The applied electric field was also shown to control the surface recombination velocity, which lead to an unexpected rise and fall of measured lifetimes as the potential bias was increased from 0 to 0.5 volts. (2) An investigation into the environmental stability of exfoliated 2D MoTe2 was conducted using a passivation layer of amorphous boron nitride as a capping layer for back-gated MoTe2 field effect transistor (FET) devices. A systematic approach was taken to understand the effects of heat treatment in air on the performance of FET devices. Atmospheric oxygen was shown to negatively affect uncoated MoTe2 devices while BN-covered FETs showed remarkable chemical and electronic characteristic stability. Uncapped MoTe2 FET devices, which were heated in air for one minute, showed a polarity switch from n- to p-type at 150 °C, while BN-MoTe2 devices switched only after 200 °C of heat treatment. Time-dependent experiments at 100 °C showed that uncapped MoTe2 samples exhibited the polarity switch after 15 min of heat treatment while the BN-capped device maintained its n-type conductivity. X-ray photoelectron spectroscopy (XPS) analysis suggests that oxygen incorporation into MoTe2 was the primary doping mechanism for the polarity switch. (3) The feasibility of UV laser annealing as a post-process technique to sinter 2D crystal structures from sputtered amorphous MoS2 was explored. Highly crystalline materials are sought after for their use in electron and opto-electronic devices. Sputtered MoS2 has the advantage of potential for large area deposition and high scalability, however, it requires high temperatures (>350 °C) for their crystalline growth. Which creates difficulty for devices grown on polymer substrates. Low-temperature and room temperature deposition results in amorphous films which is detrimental for electric devices. A one-step lase annealing procedure was developed to provide amorphous to crystalline conversion of nanometer thin MoS2 films. Samples were annealed using an unfocused laser beam from a KrF (248 nm) excimer source. The power density was found to be 1.04 mJ/mm2. Raman analysis of laser annealed MoS2 was shown to exhibit a significant improvement of the 2D MoS2 crystallinity compared to as-deposited films on both SiO2/Si, as well as polydimethylsiloxane (PDMS) substrates. Annealed samples showed improvement of their conductivity on an order of magnitude. A top-gated FET device was fabricated on flexible PDMS substrates using Al2O3 as a gate oxide. Measured field effect mobility of annealed samples showed significant improvement over as-deposited devices.

The aggressive reduction of feature size in silicon (Si)-based complimentary metal-oxide-semiconductor (CMOS) technology has resulted in an exponential increase in computing power. Stemming from increases in device density and substantial progress in materials science and transistor design, the integrated circuit has seen continual performance improvements and simultaneous reductions in operating power (VDD). Nevertheless, existing Si-based metal-oxide-semiconductor field-effect transistors (MOSFETs) are rapidly approaching the physical limits of their scaling potential. New material innovations, such as binary group IV or ternary III-V compound semiconductors, and novel device architectures, such as the tunnel field-effect transistor (TFET), are projected to continue transistor miniaturization beyond the Si CMOS era. Unlike conventional MOSFET technology, TFETs operate on the band-to-band tunneling injection of carriers from source to channel, thereby resulting in steep switching characteristics. Furthermore, narrow bandgap semiconductors, such as germanium (Ge) and InxGa1-xAs, enhance the ON-state current and improve the switching behavior of TFET devices, thus making these materials attractive candidates for further study. Moreover, epitaxial growth of Ge on InxGa1-xAs results in tensile stress (ε) within the Ge thin-film, thereby giving device engineers the ability to tune its material properties (e.g., mobility, bandgap) via strain engineering and in so doing enhance device performance. For these reasons, this research systematically investigates the material, optical, electronic transport, and heterointerfacial properties of ε-Ge/InxGa1-xAs heterostructures grown on GaAs and Si substrates. Additionally, the influence of strain on MOS interfaces with Ge is examined, with specific application toward low-defect density ε-Ge MOS device design. Finally, vertical ε-Ge/InxGa1-xAs tunneling junctions are fabricated and characterized for the first time, demonstrating their viability for the continued development of next-generation low-power nanoelectronic devices utilizing the Ge/InxGa1-xAs material system. / Doctor of Philosophy / The aggressive scaling of transistor size in silicon-based complimentary metal-oxide-semiconductor technology has resulted in an exponential increase in integrated circuit (IC) computing power. Simultaneously, advances in materials science, transistor design, IC architecture, and microelectronics fabrication technologies have resulted in reduced IC operating power requirements. As a consequence, state-of-the-art microelectronic devices have computational capabilities exceeding those of the earliest super computers at a fraction of the demand in energy. Moreover, the low-cost, high-volume manufacturing of these microelectronic devices has resulted in their nigh-ubiquitous proliferation throughout all aspects of modern life. From social engagement to supply chain logistics, a vast web of interconnected microelectronic devices (i.e., the "Internet of Things") forms the information technology bedrock upon which 21st century society has been built. Hence, as progress in microelectronics and related fields continues to evolve, so too does their impact on an increasingly dependent world. Moore's Law, or the doubling of IC transistor density every two years, is the colloquialism used to describe the rapid advancement of the microelectronics industry over the past five decades. As mentioned earlier, parallel improvements in semiconductor technologies have spearheaded great technological change. Nevertheless, Moore's Law is rapidly approaching the physical limits of transistor scaling. Consequently, in order to continue improving IC (and therefore microelectronic device) performance, new innovations in materials and fabrication science, and transistor and IC designs are required. To that end, this research systematically investigates the material, optical, and electrical properties of novel semiconductor material systems combining elemental (e.g., Germanium) and compound (e.g., Gallium Arsenide) semiconductors. Additionally, alternative transistor design concepts are explored that leverage the unique properties of the aforementioned materials, with specific application to low-power microelectronics. Therefore, through a holistic approach towards semiconductor materials, devices, and circuit co-design, this work demonstrates, for the first time, novel transistor architectures suitable for the continued development of next-generation low-power, high-performance microelectronic devices.

No description available.

<p>The traditional semiconductor device scaling based on Moore’s law is reaching its physical limits. New materials hosting rich physical phenomena such as correlated electronic behavior may be essential to identify novel approaches for information processing. The tunable band structures in such systems enables the design of hardware for neuromorphic computing. Strongly correlated perovskite nickelates (ReNiO3) represent a class of quantum materials that possess exotic electronic properties such as metal-to-insulator transitions. In this thesis, detailed studies of NdNiO3 thin films from wafer-scale synthesis to structure characterization and to electronic device demonstration will be discussed.</p> <p>Atomic layer deposition (ALD) of correlated oxide thin films is essential for emerging electronic technologies and industry. We reported the scalable ALD growth of neodymium nickelate (NdNiO3) with high crystal quality using Nd(iPrCp)3, Ni(tBu2-amd)2 and ozone (O3) as precursors. By controlling various growth parameters such as precursor dose time and reactor temperature, we have optimized ALD condition for perovskite phase of NdNiO3­. We studied the structure and electrical properties of ALD NdNiO3 films epitaxially grown on LaAlO3 and confirmed their properties were comparable to those synthesized by physical vapor deposition methods. </p> <p>ReNiO3 undergoes a dramatic phase transition by hydrogen doping with catalytic electrodes independent of temperature. The electrons from hydrogen occupy Ni 3<em>d</em> orbitals and create strongly correlated insulating state with resistance changes up to eight orders of magnitudes. At room temperature, protons remain in the lattice locally near catalytic electrodes and can move by electrical fields due to its charge. The effect of high-speed voltage pulses on the migration of protons in NdNiO3 devices is discussed. After voltage pulses were applied with changing the voltage magnitude in nanosecond time scale, the resistance changes of the nickelate device were investigated. </p> <p>Reconfigurable perovskite nickelate devices were demonstrated and a single device can switch between multiple electronic functions such as neuron, synapse, resistor, and capacitor controlled by a single electrical pulse. Raman spectroscopy showed that differences in local proton distributions near the Pd electrode leads to different functions. This body of results motivates the search for novel materials where subtle compositional or structural differences can enable different gaps that can host neuromorphic functions.</p>

Optoelectronic devices based on organic semiconductors have been the focus of increasing research over the past two decades. While many of the potential organic electronic concepts (solar cells, transistors, detectors etc.) are still in their infancy stage, organic light-emitting diodes have gained commercial acceptance for their potential in high resolution displays and solid-state lighting. However, in order for these devices to reach their full potential significant advances need to make to address their fundamental limitations, specifically: device life-time, thin-film encapsulation and scalability to a high volume manufacturing setting. The work presented in this thesis demonstrates new strategies to design and manufacture high-performance OLEDs for next generation electronics. In the first part, high-performance OLEDS using a simple three-layer organic semiconductor device structure are demonstrated. These devices utilize two novel materials (Poly-TriCZ and mCPSOB) to achieve efficient charge balance and exciton confinement in the emissive region of the device. Moreover, the electrical properties of these materials allow them to serve as a suitable ‘universal’ material combination to yield high-performance OLEDs with high-energy phosphors (i.e. blue- or deep-blue-emitting dopants). To demonstrate this feature, green- and blue-emitting OLED results are provided that define the state-of-the-art for phosphorescent OLEDs. These results are then extended to show high-performance with a new set of high-efficiency blue- and green-emitting dopants based on thermally activated delayed fluorescence (TADF), which also proceed to define the state-of-the-art in electroluminescence from TADF. The second part of this thesis continues this work and extends the results to a new class of polymeric substrates, called shape memory polymers (SMPs). SMPs provide a new alternative to flexible, polymeric substrates due to their unique mechanical properties. When an external stimuli is applied to these materials (heat), they have the ability to form a temporary phase that has a Young’s modulus orders of magnitude lower than its original state. The material can then be re- shaped, deformed or conform to any object until the stimuli is removed, at which point the Young’s modulus returns to its original state and the temporary geometric configuration is retained. Re-applying the stimulus will trigger a response in its molecular network, which induces a recovery of its original shape. By using mCPSOB in an inverted top-emitting OLED architecture, high performance green-emitting OLEDs are demonstrated on SMP substrates that define the state-of-the-art in performance for deformable light-emitting devices. The combination of the unique properties of SMP substrates with the light-emitting properties of OLEDs pave to the way for new class of applications, including conformable smart skin devices, minimally invasive biomedical devices, and flexible lighting/display technologies.

Thesis (PhD)--Stellenbosch University, 2013. / ENGLISH ABSTRACT: This study developed and optimised zinc oxide (ZnO) nanowire-based nanogenerator. The nanogenerator works on the piezoelectric effect that is, a mechanical force is converted to an electrical voltage. The ZnO nanowires are piezoelectric and when any force is applied to the nanowires an output voltage is generated. This ZnO nanowire-based nanogenerator can be used to power small electronic devices, such as pacemakers. The nanogenerator can also be incorporated into clothes and shoes to generate electricity to charge a cell phone for example. The problem experienced currently is that the nanogenerator does not generate enough electricity to be of practical use and needs to be further optimised. Simulations and mathematical models were used to identify areas where the nanogenerator could be optimised in order to increase the output voltage. It is shown that the morphology of the nanowires can have a considerable effect on the output voltage. For this reason the growth of the nanowires was investigated first. Different methods were used to propagate the nanowires in order to select the method that, on average, has the highest output voltage. Accordingly, one parameter at a time and design of experiments were used to optimise the nanowire growth. Consequently, these two methods were used to optimise the growth parameters with the respect to the output voltage. The aqueous solution method was found to yield nanowires that give the highest generated output voltage. After growing over 600 nanowire samples, optimal growth parameters for this method were found. These optimal growth parameters were subsequently used to grow nanowires that were used to manufacture the nanogenerator. The nanowires were grown on a solid substrate and hence the nanogenerator was also manufactured on the solid substrate. Through various optimisations of the manufacturing process the maximum output voltage achieved was about 500 mV. However, this output voltage is too low to be of practical use, even though the output has been raised considerably. The main problem was found to be the fact that the contact between the nanowires and the electrode was weak due to contamination. A new method was therefore required where the electrode and the nanowires would be in proper contact to ensure that higher output voltages were achieved. Subsequently, a flexible nanogenerator was manufactured in order to solve this problem. Accordingly, the nanowires were grown on the flexible polyimide film and a buffer layer was then spun onto the flexible substrate, leaving only the nanowire tips exposed. The electrode was then sputtered on top of this buffer layer, covering the nanowire tips. This ensured proper contact between the nanowires and the electrode. The nanogenerator, which was manufactured with non-optimal growth parameters, gives a maximum voltage output of 1 V, double the maximum achieved with the solid nanogenerator. When the optimal growth parameters were used the output voltage was raised to 2 V. Various optimisation techniques were performed on the nanogenerator, including plasma treatment and annealing and the use of various materials in the buffer layer. Combining these optimisation methods subsequently led to an optimised nanogenerator that can generate an output voltage of over 5 V. This was achieved after over 1200 nanogenerators had been manufactured. However, the output voltage was not in a usable form. Circuitry was therefore developed to transform the voltage generated by the nanogenerator to a useable form. The best circuit, the LTC3588, was used to power an LED for 10 seconds. The completed device was found to achieve a power output of 0.3 mW, enough for small electronic devices. / AFRIKAANSE OPSOMMING: ‘n Sink-oksied (ZnO) nanodraad gebaseerde nanogenerator is ontwikkeld en geöptimeer. Die nanogenerator werk met behulp van die piezoelektriese effek - meganiese krag work omgesit in ‘n elektriese spanning. Die ZnO nanodrade is piezoelektries en wanneer ‘n krag op die drade aangewend word, word ‘n uittree spanning gegenereer. Die nanogenerator kan gebruik word om klein elektroniese toestelle, soos ‘n pasaangeër, van krag te voorsien. Die nanogenerator kan in klere en skoene geïnkorporeer word om elektrisiteit op te wek vir die laai van ‘n selfoon. Die probleem is egter dat die nanogenerator tans nie genoeg krag opwek om prakties van nut te wees nie en verdere optimasie word benodig. Simulasies en wikundige modelle work gebruik om areas te identifiseer waar die nanogenerator geöptimeer kan word, met die doel om die uittreespanning te verhoog. Dit word bewys dat die morfologie van die nanodrade ‘n groot effek het op die uittreespanning. Dus word die groei van die nanodrade eerste ondersoek. Verskillende metodes word gebruik om die nanodrade te groei en die beste metode, wat die hoogste uittreespanning op gemiddeld verskaf, word gekies. Een parameter op ‘n slag en ontwerp van eksperimente word gebruik om die nanodraad groei te optimeer. Die groei parameters word geöptimeer deur van die twee metodes gebruik te maak, en die optimeering word gedoen in terme van die uittreespanning. Die oplossing groei metode lei tot nanodrade wat die hoogste uittreespanning verskaf. Na oor die 600 nanodraad monsters gegroei is, is die optimale parameters gevind. Hierdie optimale parameters word uitsluitlik gebruik om die nanogenerator te vervaardig. Die nanodrade word op ‘n soliede substraat gegroei en dus word die nanogenerator op dieselfde soliede substraat vervaardig. Verskeie metodes is gebruik om die vervaardiging te optimeer en die hoogste uittreespanning wat bereik is, is 500 mV. Die uittreespanning is te laag om van praktiese nut te wees alhoewel dit heelwat verhoog is. Die grootste probleem is die swak kontak tussen die nanodrade en die elektrode, wat veroorsaak word deur kontaminasie. ‘n Nuwe metode word verlang wat beter kontak tussen die nanodrade en elektrode sal verseker. ‘n Buigbare nanogenerator is vervaardig om die probleem op te los. Die nanodrade word nou op ‘n buigbare film gegroei. ‘n Bufferlaag word tussen die nanodrade in gedraai, tot net die punte van die nanodrade nog sigbaar is. Die elektrode word bo-op die bufferlaag gedeponeer, wat behoorlike kontak tussen die nanodrade en elektrode verseker. Die nanogenerator wat met nie-optimale groei parameters vervaardig is, bereik ‘n uittreespanning van 1 V, dubbel die soliede nanogenerator. Met optimale groei parameters word die uittreespanning tot 2 V verhoog. Verskeie optimasie tegnieke word op die nanogenerator toegepas. Die metodes sluit in suurstof plasma behandeling, verhitting en die inkorporasie van verskillende materiale in die bufferlaag. ‘n Kombinasie van die metodes geïnkorporeer in een nanogenerator lei tot ‘n uittreespanning van 5 V. Die uittreespanning is bereik na oor die 1200 nanogenerators vervaardig is. The uittreespanning is nog nie in ‘n bruikbare vorm nie. Spesiale stroombane is ontwikkel wat die nanogenerator spanning omskakel na ‘n bruikbare vorm. Die beste stroombaan, die LTC3588, kan ‘n LED aanskakel vir 10 sekondes. The toestel kan ook 0.3mWuittreekrag voorsien, genoeg vir klein elektroniese toestelle om te werk.

L'objectif de cette thèse dans le domaine de la nanoélectronique est de contribuer à l'analyse des phénomènes de transport électronique quantique dans les nanostructures. Nous développons ainsi spécifiquement la théorie de raccordement des champs de phase (PFMT). Cette approche algébrique décrit les propriétés électroniques du système par les liaisons fortes, mais repose fondamentalement sur la technique de raccordement de phase des états électroniques des électrodes avec ceux sur les nanojonctions moléculaires. En comparant certains de nos résultats avec ceux des méthodes de principes premiers, nous avons montré la justesse et fonctionnalité de notre approche. Une alternative pratique et générale aux nombreuses techniques basées sur la fonction de Green, elle est appliquée dans ce travail de thèse pour modéliser le transport électronique à travers de nanojonctions sous forme de fils mono et diatomiques, constitués d'éléments de Na, Cu, Co, C, Si, Ga et As, mono et multivalents. / The aim of this thesis in the nanoelectronics domain is to present a contribution to the analysis of the quantum electronic transport phenomena in nanostructures. For this purpose, we specifically develop the phase field matching theory (PFMT). Within this algebraic approach the electronic properties of the system are described by the tight-binding formalism, whereas the analysis of the transport properties based on the phase matching of the electronic states of the leads to the states of the molecular nanojunctions. By comparing some of our results with those of the first principles methods, we have shown the correctness and fonctionality of our approach. Moreover, our method can be considered as a practical and general alternative to the Green’s function-based techniques, and is applied in this work to model the electronic transport across mono and diatomic nanojunctions, consisting of mono and multivalent Na, Cu, Co, C, Si, Ga and As elements.

In this thesis, an interface passivation by a lattice matched atomic layer deposition (ALD) epitaxial magnesium calcium oxide (MgCaO) on wide-bandgap gallium nitride (GaN) has been applied for the first time and expensively studied via various characterization methods (including AC conductance methods, pulsed current-voltage, and single pulse charge pumping). Also, beta-Ga2O3 with a monoclinic crystal structure that offers several surface oriented channels has been demonstrated as potential beta-Ga2O3 FET. On the other hand, low frequency noise studies in 2-D MoS2 NC-FETs was reported for the first time. Low frequency noise of the devices is systematically studied depending on various interfacial oxides, different thicknesses of interfacial oxide, and ferroelectric hafnium zirconium oxide. Interestingly enough, the low frequency noise is found to decrease with thicker ferroelectric HZO in the subthreshold regime of the MoS2 NC-FETs, in stark contrast to the conventional high-k transistors. Also, the ferroelectric switching speed is found to be related with the maximum electric field applied during the fast gate voltage sweep, suggesting the internal ferroelectric switching speed can be even faster depending on the device’s electrical bias conditions and promises a high speed performance in our ferroelectric HZO