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Showing 71 to 76 of 76 (0.032 seconds)Spelling suggestions: "subject:"nanolithography"" "subject:"nanolithograpy""
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Diverse Applications of Magnetotactic BacteriaClark, Kylienne Annette 02 September 2014 (has links)
No description available.
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[en] PRODUCTION AND CHARACTERIZATION OF MAGNETITE STRUCTURES: NANOPARTICLES, THIN FILMS AND LITHOGRAPHED ARRAYS / [pt] PRODUÇÃO E CARACTERIZAÇÃO DE ESTRUTURAS DE MAGNETITA: NANOPARTÍCULAS, FILMES FINOS E PADRÕES LITOGRAFADOSGERONIMO PEREZ 29 October 2021 (has links)
[pt] Este trabalho pode ser dividido em três etapas principais: síntese das nanopartículas, deposição de filmes finos e litografia por feixe de elétrons. As nanopartículas magnéticas foram sintetizadas pelo método de co-precipitação a partir de sulfato de ferro II (FeSO4), cloreto férrico (FeCl3) e hidróxido de amônia (NH4OH) à temperatura ambiente. Para prevenir a formação de agregados, foi adicionado nitrato de sódio (NaNO3) em pequenas quantidades, que se mostrou bastante eficiente. Em seguida foram produzidos filmes de magnetita utilizando o sistema de pulverização catódica usando fonte de radiofrequência (sputtering RF). Os alvos foram produzidos por compactação das nanopartículas de magnetita produzidas anteriormente. Os filmes finos foram depositados em substrato de silício. A formação de magnetita durante a deposição foi confirmada por difração de raios-x e magnetômetro de amostra vibrante. Uma vez controlados os parâmetros de deposição, foram produzidos arranjos de magnetita. A litografia por feixe de elétrons foi produzida em substrato de silício recoberto com máscara de PMMA (polimetilmetacrilato) de 250 nm de espessura. Foram produzidos arranjos periódicos de formas básicas a modo de testar a técnica de litografia: quadrados de 1 μm e círculos de 1 μm, 500 nm e 250 nm de diâmetro formados de um filme de magnetita de 80 nm de espessura. A espessura do filme, forma, tamanho e separação das figuras que compõem os padrões litografados influenciam na facilidade com que será retirada a mascara de PMMA. / [en] This work can be divided into three main steps: synthesis of nanoparticles, thin film deposition and electron beam lithography. The magnetic nanoparticles were synthesized by co-precipitation method from iron II sulfate (FeSO4), ferric chloride (FeCl3) and ammonium hydroxide (NH4OH) at room temperature. A small amount of sodium nitrate (NaNO3) was added to avoid the cluster formation, which was very efficient. Then the magnetite thin films were produced using the sputtering RF (radio frequency source) system. The targets were produced by compression of magnetite nanoparticles previously produced in the first step. The thin films were deposited on a silicon substrate. The formation of the magnetite after the deposition was confirmed by x-ray diffraction and vibrating sample magnetometer. The arrays of magnetite were made once the deposition parameters were controlled. The electron beam lithography has been produced on silicon substrate covered of PMMA (polymethylmethacrylate) resist 250 nm thick. Were produced periodic arrays of basic forms a way to test the technique of lithography, a square micron circles 1 μm, 500 nm and 250 nm in diameter formed of a magnetite film 80 nm thick. The film thickness, shape, size and separation of the figures which comprise standards lithographed can influence the ease with which the mask is withdrawn from PMMA.
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Anisotropia de resistividade elétrica em filmes finos nanoestruturados. / Electrical resistivity anisotropy in nanostructured thin films.Teixeira, Fernanda de Sá 18 May 2007 (has links)
O objetivo principal deste trabalho foi desenvolver um dispositivo de filme fino com anisotropia de resistividade elétrica. A idéia foi usar um efeito quântico presente em filmes muito finos de materiais condutores ou semicondutores com morfologia anisotrópica na superfície. A morfologia foi um perfil unidirecional quase-senoidal. As resistividades foram determinadas medindo-se as resistências elétricas destes materiais em direções ortogonais, levando-se em conta a geometria da amostra e suas dimensões. O material condutor usado foi Polimetilmetacrilato (PMMA) com ouro implantado na superfície. A profundidade média de implantação foi 2,7 nm. Na fabricação do dispositivo foi utilizada micro e nanolitografia, caracterização por Microscopia Eletrônica de Varredura e Microscopia de Força Atômica e implantação de ouro por MePIIID (Metal Plasma Immersion Ion Implantation and Deposition). / The main purpose of this work was to develop a thin film device with electrical anisotropic resistivity. The idea was to use a quantum effect which is present in very thin films of conductor or semiconductor materials with anisotropic morphology on the surface. The morphology was a sinusoidal-like unidirectional profile. The resistivities were determined measuring the electrical resistances of theses materials in orthogonal directions, taking in account the sample geometry and dimensions. The conductive material used was Polymethylmethacrylate (PMMA) with gold implanted on the surface. The average implanted depth was 2.7 nm. In the device fabrication were used micro and nanolithography, characterization by Scanning Electron Microscopy and Atomic Force Microscopy and gold implantation by MePIIID (Metal Plasma Immersion Ion Implantation and Deposition).
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Anisotropia de resistividade elétrica em filmes finos nanoestruturados. / Electrical resistivity anisotropy in nanostructured thin films.Fernanda de Sá Teixeira 18 May 2007 (has links)
O objetivo principal deste trabalho foi desenvolver um dispositivo de filme fino com anisotropia de resistividade elétrica. A idéia foi usar um efeito quântico presente em filmes muito finos de materiais condutores ou semicondutores com morfologia anisotrópica na superfície. A morfologia foi um perfil unidirecional quase-senoidal. As resistividades foram determinadas medindo-se as resistências elétricas destes materiais em direções ortogonais, levando-se em conta a geometria da amostra e suas dimensões. O material condutor usado foi Polimetilmetacrilato (PMMA) com ouro implantado na superfície. A profundidade média de implantação foi 2,7 nm. Na fabricação do dispositivo foi utilizada micro e nanolitografia, caracterização por Microscopia Eletrônica de Varredura e Microscopia de Força Atômica e implantação de ouro por MePIIID (Metal Plasma Immersion Ion Implantation and Deposition). / The main purpose of this work was to develop a thin film device with electrical anisotropic resistivity. The idea was to use a quantum effect which is present in very thin films of conductor or semiconductor materials with anisotropic morphology on the surface. The morphology was a sinusoidal-like unidirectional profile. The resistivities were determined measuring the electrical resistances of theses materials in orthogonal directions, taking in account the sample geometry and dimensions. The conductive material used was Polymethylmethacrylate (PMMA) with gold implanted on the surface. The average implanted depth was 2.7 nm. In the device fabrication were used micro and nanolithography, characterization by Scanning Electron Microscopy and Atomic Force Microscopy and gold implantation by MePIIID (Metal Plasma Immersion Ion Implantation and Deposition).
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Patterned polymer brushesChen, Tao, Amin, Ihsan, Jordan, Rainer January 2012 (has links)
This critical review summarizes recent developments in the fabrication of patterned polymer brushes. As top-down lithography reaches the length scale of a single macromolecule, the combination with the bottom-up synthesis of polymer brushes by surface-initiated polymerization becomes one main avenue to design new materials for nanotechnology. Recent developments in surface-initiated polymerizations are highlighted along with diverse strategies to create patterned polymer brushes on all length scales based on irradiation (photo- and interference lithography, electron-beam lithography), mechanical contact (scanning probe lithography, soft lithography, nanoimprinting lithography) and on surface forces (capillary force lithography, colloidal lithography, Langmuir–Blodgett lithography) (116 references). / Dieser Beitrag ist mit Zustimmung des Rechteinhabers aufgrund einer (DFG-geförderten) Allianz- bzw. Nationallizenz frei zugänglich.
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Nanolithography on thin films using heated atomic force microscope cantileversSaxena, Shubham 01 November 2006 (has links)
Nanotechnology is expected to play a major role in many technology areas including electronics, materials, and defense. One of the most popular tools for nanoscale surface analysis is the atomic force microscope (AFM). AFM can be used for surface manipulation along with surface imaging.
The primary motivation for this research is to demonstrate AFM-based lithography on thin films using cantilevers with integrated heaters. These thermal cantilevers can control the temperature at the end of the tip, and hence they can be used for local in-situ thermal analysis. This research directly addresses applications like nanoscale electrical circuit fabrication/repair and thermal analysis of thin-films. In this study, an investigation was performed on two thin-film materials. One of them is co-polycarbonate, a variant of a polymer named polycarbonate, and the other is an energetic material called pentaerythritol tetranitrate (PETN).
Experimental methods involved in the lithography process are discussed, and the results of lithographic experiments performed on co-polycarbonate and PETN are reported. Effects of dominant parameters during lithography experiments like time, temperature, and force are investigated. Results of simulation of the interface temperature between thermal cantilever tip and thin film surface, at the beginning of the lithography process, are also reported.
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