Lors de ce travail nous avons étudié la synthèse de nitrure de silicium en utilisant des décharges magnétron Ar/NH3 et Ar/H2/N2. Nous nous sommes intéressés particulièrement à la caractérisation de la décharge. Le paramètre de diagnostic le plus utilisé pour caractériser une décharge magnétron est la mesure de la tension de décharge, mais ces mesures ne donnent qu’une vue partielle du processus de pulvérisation même si le régime de pulvérisation peut être défini :métallique ou réactif. En effet, aucune information chimique ne peut être extraite des courbes de tension: d’autres techniques d’analyse sont donc indispensables. Nous avons utilisé la spectroscopie des photoélectrons X (XPS) pour analyser la chimie de la surface de la cible et la spectroscopie d’émission optique (OES) pour analyser la phase gazeuse.<p>La combinaison des mesures de tension et XPS a permis de mettre en évidence l’empoisonnement de la surface de la cible, consécutif à la formation d’une couche de nitrure de silicium lors de la pulvérisation dans un mélange Ar/NH3. Dans le cas du mélange Ar/H2/N2, les mesures de tension ne permettent pas avec certitude de confirmer un empoisonnement de la cible, néanmoins les mesures XPS mettent en évidence, comme pour le mélange Ar/NH3, la présence d’une couche de nitrure de silicium. Les mesures OES ont permis de détecter les mêmes espèces dans les deux types de mélange gazeux, seule l’espèce NH n’a pas été détectée dans le mélange Ar/H2/N2. Parmi les espèces détectées, certaines sont directement pulvérisées de la cible; il a été possible de relier l’intensité de celles-ci avec l’état de surface de la cible dans le cas du plasma Ar/NH3.<p>Nous avons également étudié l’instabilité du processus de pulvérisation en combinant des mesures de tension, OES et XPS. Avec une vitesse de pompage de 230 l/s, nous avons observé une très faible hystérèse de la tension pour les deux types de mélange gazeux. Dans le cas du plasma Ar/NH3, nous avons pu mettre en évidence que la bande de l’espèce NH peut être utilisée comme paramètre de contrôle de la décharge. Finalement, nous avons caractérisé les films obtenus par XPS et spectroscopie infrarouge. La stoechiométrie des films déposés va dépendre de la quantité d’ammoniac ou d’azote injecté dans la décharge, les films déposés avec NH3 sont contaminés par quelques pourcents d’oxygène alors que ceux déposés avec le mélange Ar/H2/N2 en sont dépourvus. / Doctorat en Sciences / info:eu-repo/semantics/nonPublished

Group III-A nitrides (GaN, AlN, InN and alloys) are materials of considerable contemporary interest and currently enable a wide variety of optoelectronic and high-power, high-frequency electronic applications. All of these applications utilize device structures that employ a single or multiple hetero-junctions, with material compositions varying across the interface. For example, the workhorse of GaN based electronic devices is the high electron mobility transistor (HEMT) which is usually composed of an AlGaN/GaN hetero-junction, where a two-dimensional electron gas (2DEG) is formed due to differences in polarization between the two layers. In addition to such hetero-junctions in the same material family, formation of hetero-interfaces in nitrides begins right from the epitaxy of the very first layer due to the lack of native substrates for their growth. The consequences of such "dissimilar" hetero-junctions typically manifest as large defect densities at this interface which in turn gives rise to defective films. Additionally, if the substrate is also a semiconductor, the electrical properties at such dissimilar semiconductor-nitride hetero-junctions are particularly important in terms of their influence on the performance of nitride devices. Nevertheless, the large defect densities at such dissimilar 3D-3D semiconductor interfaces, which translate into more trap states, also prevents them from being used as active device layers to say nothing of reliability considerations arising because of these defects. Recently, the advent of 2D materials such as graphene and MoS2 has opened up avenues for Van der Waal’s epitaxy of these layered films with practically any other material. Such defect-free integration enables dissimilar semiconductor hetero-junctions to be used as active device layers with carrier transport across the 2D-3D hetero-interface. This thesis deals with hetero-epitaxial growth platforms for reducing defect densities, and the material and electrical properties of dissimilar hetero-junctions with the group III-A nitride material system.

No description available.

The addition of hexagonal boron nitride (h-BN) has introduced a comprehensive reinforcing effect to the mechanical and electrochemical properties of commercial concrete, including fiber reinforced concrete (FRC) and steel fiber reinforced concrete (SFRC). Although this has been proven effective and applicable, further investigation and study is still required to optimize the strengthen result which will involve the exfoliation of h-BN into single-layered nano sheet, improving the degree of dispersion and dispersion uniformity of h-BN into concrete matrix. There is currently no direct method to test the degree of dispersion of non-conductive particles, including h-BN, in concrete matrix, therefore it is necessary to obtain an analogous quantification method like SEM, etc. The reinforcing mechanism on concrete, including FRC and SFRC is now attracting a great number of interest thanks to the huge potential of application and vast demand across the world. This study briefly describes the reinforcing mechanism brought by h-BN. In this study, different samples under varied conditions were prepared according to the addition of h-BN and dispersant to build a parallel comparison. Characterization is mainly focused on their mechanical properties, corrosive performance and SEM analysis of the cross-section of post-failure samples.

Glasses and ceramics offer several unique characteristics over polymers or metals. However, they suffer from a shortcoming due to their brittle nature, falling short in terms of fracture toughness and mechanical strength. The aim of this work is to reinforce borosilicate glass matrix with reinforcements to increase the fracture toughness and strength of the glass. Boron nitride nanomaterials, i.e. nanotubes and nanosheets have been used as possible reinforcements for the borosilicate glass matrix. The tasks of the thesis are many fold which include: 1. Reinforcement of commercially derived and morphologically different (bamboo like and cylinder like) boron nitride nanotubes in borosilicate glass with the concentration of 0 wt%, 2.5 wt% and 5 wt% by ball milling process. Same process was repeated with reinforcing cleaned boron nitride nanotubes (after acid purification) into the borosilicate glass with similar concentrations. 2. Production of boron nitride nanosheets using liquid exfoliation technique to produce high quality and high aspect ratio nanosheets. These boron nitride nanosheets were reinforced in the borosilicate glass matrix with concentrations of 0 wt%, 2.5 wt% and 5 wt% by ball milling process. The samples were consolidated using spark plasma sintering. These composites were studied in details in terms of material analysis like thermo-gravimetric analysis, detailed scanning electron microscopy and transmission electron microscopy for the quality of reinforcements etc.; microstructure analysis which include the detailed study of the composite powder samples, the densities of bulk composite samples etc; mechanical properties which include fracture toughness, flexural strength, micro-hardness, Young’s modulus etc. and; tribological properties like scratch resistance and wear resistance. Cleaning process of boron nitride nanotubes lead to reduction in the Fe content (present in boron nitride nanotubes during their production as a catalyst) by ~54%. This leads to an improvement of ~30% of fracture toughness measured by chevron notch technique for 5 wt% boron nitride nanotubes reinforced borosilicate glass. It also contributed to the improvement of scratch resistance by ~26% for the 5 wt% boron nitride nanotubes reinforced borosilicate glass matrix. On the other hand, boron nitride nanosheets were successfully produced using liquid exfoliation technique with average length was ~0.5 µm and thickness of the nanosheets was between 4-30 layers. It accounted to an improvement of ~45% for both fracture toughness and flexural strength by reinforcing 5 wt% of boron nitride nanosheets. The wear rates reduced by ~3 times while the coefficient of friction was reduced by ~23% for 5 wt% boron nitride nanosheets reinforcements. Resulting improvements in fracture toughness and flexural strength in the composite materials were observed due to high interfacial bonding between the boron nitride nanomaterials and borosilicate glass matrix resulting in efficient load transfer. Several toughening and strengthening mechanisms like crack bridging, crack deflection and significant pull-out were observed in the matrix. It was also observed that the 2D reinforcement served as more promising candidate for reinforcements compared to 1D reinforcements. It was due to several geometrical advantages like high surface area, rougher surface morphology, and better hindrance in two dimensions rather than just one dimension in nanotubes.

<p dir="ltr">Antennas are used to transmit communication signals for many applications including for the navigation of aircraft. To protect the antennas from environmental conditions electromagnetic transparent structures called radomes are used. Advancements in technology have led to the development of hypersonic flight vehicles. These aircraft travel at speeds of Mach 5 and greater subjecting them to extreme environmental conditions. These aircraft require precise navigation making it important to have radome materials that can withstand the extreme conditions of high-speed flight while maintaining transparency to the incoming and outgoing signals of the antenna. Silicon nitride is a ceramic material of interest for high temperature radomes due to its mechanical properties, temperature stability, and satisfactory dielectric properties. Incorporating porosity into silicon nitride further enhances the transmission performance making porous silicon nitride a leading candidate material for high temperature radomes. In this dissertation slip casting with pressureless sintering is proposed as a route to fabricate porous silicon nitride ceramics for radomes. Modification of sintering aids and sintering temperatures are explored as a method to control the amount of porosity. Mechanical properties and dielectric properties of these materials are investigated. </p><p dir="ltr">First, an aqueous silicon nitride suspension developed for slip casting was optimized by investigating the rheological properties, zeta potential, and sedimentation behavior. It was determined that a suspension with 30 vol% solids, 0.5 wt% dispersant (PEI), and a pH of 7 was the optimized condition that resulted in uniform cast parts. This optimized suspension was used to fabricate silicon nitride samples with yttria and alumina sintering aids. An average density of 93% with an average strength of 659 MPa at room temperature and a strength of 472 MPa maintained up to 1200°C was achieved. Dielectric constant and loss tangent were measured on samples with 4-17% porosity to be 5.85-7.70 and <0.02, respectively. </p><p dir="ltr">To create samples with higher levels of porosity and therefore lower dielectric constants the yttria and alumina sintering aids were replaced with ytterbium oxide. Ytterbium oxide assists in forming porous silicon nitride due to the high melting temperature and high viscosity of the resulting glassy phase. Slip cast samples with 5% Yb₂O₃ were sintered at temperatures of 1700-1850°C resulting in porosities of 21-32% and strengths of 267-445 MPa. The dielectric constants of these materials were measured to be 4.56-5.80 with average loss tangents <0.006. The amount of ytterbium oxide was also studied to determine the effects on density, microstructure, mechanical properties, and dielectric properties. Slip-cast samples with 5-15% Yb₂O₃ were made having average porosities of 23-36% and strengths of 275-421 MPa. The dielectric constants of these materials were measured to be 4.13-4.65 with average loss tangents of <0.007. </p><p dir="ltr">Lastly, slip casting using the previously developed and evaluated suspensions was done to fabricate various radome shapes as well as layered structures. The processing method presented in this dissertation shows the potential for fabricating porous silicon nitride for high temperature radome applications with controlled porosity and relatively high strengths.</p>

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No description available.

No description available.

Gallium Nitride (GaN) and its alloys with InN and AlN, the III-nitrides, are of interest for a variety of high power-high frequency electronics and optoelectronics applications. However, unlike Si and GaAs technology that have been developed on native substrates, III-nitride devices have been developed on non-native substrates such as Si, sapphire and SiC. This is because bulk cheap native III-nitride substrates are unavailable. Among the known substrates, III-nitride technology development on Si is desirable because of its large substrate size and low cost. However, the large lattice and thermal expansion mismatch between the III-nitrides films and Si substrate leads to a high level of dislocations, 1010 cm-2, and tensile stress which results in cracking. For successful integration of crack free and low dislocation density GaN on Si various kinds of transition layer schemes are used that help to incorporate a compressive growth stress to neutralize the tensile thermal mismatch stresses and also to reduce dislocation densities to levels required by devices. These transition schemes, ranging from 400 nm to 7 m, involve the use of graded AlGaN layers, high/low temperature interlayers and superlattices. The aim of the research described in this thesis was a systematic comparison of the different transition layer schemes currently used with the objective of increasing the efficiency of integrating device quality, crack free, low dislocation density, <109 cm-2, GaN with Si. A metal organic chemical vapor deposition equipped with an in-situ stress monitor was used for growth. Transmission electron microscopy was used for quantitative measurement of dislocation density. The research shows, for the first time, that all transition layer optimization depends critically on the Si surface made available for growth of the first AlN layer. It needs to be optimally cleaned such that it is oxide free and smooth. A quantitative TEM comparison of various currently used transition layer schemes shows that while they have interesting mechanistic differences, they are not very different in their dislocation reduction efficiency. All of them yield a final dislocation density in a probe GaN layer of 1-3×109 cm-2. In contrast, a combination of Si doping and compressive growth stress has a synergistic effect on dislocation reduction. A simple 210 nm transition layer based on this understanding, the lowest reported yet, yields GaN layers that are crack free and have lower <1x109 cm-2 dislocation density, than those obtained by the aforementioned more complicated schemes. High electron mobility transistor characteristics performance on the probe GaN layers obtained on these transition layers supports the structural observations above.