Nous étudions la possibilité de réaliser des cellules à base de diséléniure de cuivre, indium et gallium (CIGSe) à absorbeur ultra-mince, en réduisant l’épaisseur de la couche de CIGSe de 2500 nm jusqu’à 100 nm, tout en conservant un haut rendement de conversion.Grâce à l’utilisation d’outils de simulation numérique, nous étudions l’influence de la réduction d’épaisseur de l’absorbeur sur les paramètres photovoltaïques de la cellule. Une importante dégradation du rendement est observée, principalement attribuée à une réduction de la fraction de lumière absorbée par le CIGSe ainsi qu’à une collecte des porteurs de charge réduite dans les dispositifs ultraminces. Des solutions permettant de surmonter ces problèmes sont proposées et leur influence potentielle est numériquement simulée ; nous démontrons qu’une ingénierie de face avant (couche tampon alternative, couche anti-réfléchissante…) et de face arrière (contact arrière réfléchissant, diffusion de la lumière) sur une cellule CIGSe à absorbeur ultramince permet de potentiellement améliorer le rendement de la cellule solaire au niveau de celui d’une cellule à absorbeur référence (2.5 μm).Grâce à l’utilisation de techniques de gravure chimique sur des échantillons standards de CIGSe épais, nous réalisons des cellules solaires avec différentes épaisseurs d’absorbeurs, et nous étudions l’influence de l’épaisseur du CIGSe sur les paramètres photovoltaïques des cellules. Le comportement similaire aux simulations numériques.Une ingénierie du contact avant sur des cellules CIGSe à différentes épaisseurs est réalisée pour spécifiquement améliorer l’absorption dans la couche de CIGSe. Nous étudions l’influence d’une couche tampon alternative de ZnS, de la texturation de la fenêtre avant de ZnO:Al, et d’une couche anti-reflet sur la cellule solaire. D’importantes améliorations sont observées quelque soit l’épaisseur de la couche de CIGSe, ce qui permet d’obtenir des rendements de conversions supérieurs à ceux obtenus dans la configuration standard des dispositifs.Une ingénierie du contact arrière à basse température est également réalisée avec l’utilisation d’un procédé novateur combinant la gravure chimique du CIGSe avec un « lift-off » mécanique de la couche de CIGSe afin de la séparer du substrat de Molybdène. De nouveaux matériaux fortement réflecteur de lumière et précédemment incompatible avec le procédé de croissance du CIGSe sont utilisés comme contact arrière pour des cellules CIGSe ultra-minces. Une étude comparative en fonction de l’épaisseur de CIGSe entre des cellules avec contact arrière réfléchissant en Or (Au) et cellules solaires avec contact arrière standard Mo est effectuée. Le contact Au permet d’augmenter significativement le rendement de conversion des cellules solaires à absorbeur sub-microniques comparé au contact standard Mo avec un rendement de conversion supérieur à 10% obtenu sur une cellule CIGSe de 400 nm (comparé à 7.9% avec Mo).Afin de réduire encore plus l’épaisseur de la couche de CIGSe, jusque 100-200 nm, les modèles numériques montrent qu’il est nécessaire d’utiliser un réflecteur lambertien sur la face arrière de la cellule afin de maximiser l’absorption de la lumière. Un dispositif preuve de concept expérimental est réalisé avec une épaisseur de CIGSe de 200 nm et un réflecteur arrière lambertien, et ce dispositif est caractérisé par spectroscopie de transmission/réflexion. La réponse spectrale est déterminée en combinant des valeurs issues de simulation numérique et la mesure expérimental de l’absorption du dispositif. Nous calculons un courant de court circuit de 26 mA.cm-2 pour ce dispositif avec réflecteur lambertien, bien supérieur à ce qui est calculé pour la même structure sans réflecteur (15 mA.cm-2), et comparable au courant mesuré sur une cellule de référence de 2500 nm (28 mA.cm-2). L’utilisation de réflecteur lambertien pour des cellules CIGSe ultraminces est donc particulièrement adaptée pour maintenir de hauts rendements. / In this thesis, we investigate on the possibility to realize ultrathin absorber Copper Indium Gallium Di-Selenide (CIGSe) solar cells, by reducing the CIGSe thickness from 2500 nm down to 100 nm, while conserving a high conversion efficiency.Using numerical modeling, we first study the evolution of the photovoltaic parameters when reducing the absorber thickness. A strong decrease of the efficiency of the solar cell is observed, mainly related to a reduced light absorption and carrier collection for thin and ultrathin CIGSe solar cells. Solutions to overcome these problems are proposed and the potential improvements are modeled; we show that front side (buffer layer, antireflection coating) and back side (reflective back contact, light scattering) engineering of an ultrathin device can potentially increase the conversion efficiency up to the level of a standard thick CIGSe solar cell.By using chemical bromine etching on a standard thick CIGSe layer, we realize solar cells with different absorber thicknesses and experimentally study the influence of the absorber thickness on the photovoltaic parameters of the devices. Experiments show a similar trends to that observed in numerical modeling.Front contact engineering on thin CIGSe solar cell is realized to increase the specific absorption in CIGSe, including alternative ZnS buffer, front ZnO:Al window texturation and anti-reflection coating. Substantial improvements are observed whatever the CIGSe thickness, with efficiencies higher that the default configuration.A back contact engineering at low temperature is realized by using an innovative approach combining chemical etching of the CIGSe and mechanical lift-off of the CIGSe from the original Molybdenum (Mo) substrate. New highly reflective materials previously incompatible with the standard solar cell process are used as back contact for thin and ultrathin CIGSe solar cells, and a comparative study between standard Mo back contact and alternative reflective Au back contact solar cells is performed. The Au back reflector significantly enhance the efficiency of solar cell with sub-micrometer absorbers compared to the standard Mo back reflector; an efficiency higher than 10 % on a 400 nm CIGSe is obtained with Au back contact (7.9% with standard Mo back contact). For further reduction of the absorber thickness down to 100-200 nm, numerical modeling show that a lambertian back reflector is needed to fully absorb the incident light in the CIGSe. An experimental proof of concept device with a CIGSe thickness of 200 nm and a lambertian back reflector is realized and characterized by reflection/transmission spectroscopy, and the experimental spectral response is determined by combining simulation and experimentally measured absorption. A short circuit current of 26 mA.cm-2 is determined with the lambertian back reflector, which is much higher than what is obtained for the same device with no reflector (15 mA.cm-2), and comparable to the short circuit current measured on a reference 2500 nm thick CIGSe solar cell (28 mA.cm-2). Lambertian back reflectors are therefore found to be the most effective way to enhance the efficiency of an ultrathin CIGSe solar cell up to the level of a reference thick CIGSe solar cell.

In the thesis work we investigate four problems connected with dynamical processes in condensed medium, using different techniques of equilibrium and non-equilibrium statistical mechanics. Biology is rich in dynamical events ranging from processes involving single molecule [1] to collective phenomena [2]. In cell biology, translocation and transport processes of biological molecules constitute an important class of dynamical phenomena occurring in condensed phase. Examples include protein transport through membrane channels, gene transfer between bacteria, injection of DNA from virus head to the host cell, protein transport thorough the nuclear pores etc. We present a theoretical description of the problem of protein transport across the nuclear pore complex [3]. These nuclear pore complexes (NPCs) [4] are very selective filters that monitor the transport between the cytoplasm and the nucleoplasm. Two models have been suggested for the plug of the NPC. The first suggests that the plug is a reversible hydrogel while the other suggests that it is a polymer brush. In the thesis, we propose a model for the transport of a protein through the plug, which is treated as elastic continuum, which is general enough to cover both the models. The protein stretches the plug and creates a local deformation, which together with the protein is referred to as the bubble. The relevant coordinate describing the transport is the center of the bubble. We write down an expression for the energy of the system, which is used to analyze the motion. It shows that the bubble executes a random walk, within the gel. We find that for faster relaxation of the gel, the diffusion of the bubble is greater. Further, on adopting the same kind of free energy for the brush too, one finds that though the energy cost for the entry of the particle is small but the diffusion coefficient is much lower and hence, explanation of the rapid diffusion of the particle across the nuclear pore complex is easier within the gel model. In chemical physics, processes occurring in condensed phases like liquid or solid often involve barrier crossing. Simplest possible description of rate for such barrier crossing phenomena is given by the transition state theory [5]. One can go one step further by introducing the effect of the environment by incorporating phenomenological friction as is done in Kramer’s theory [6]. The “method of reactive flux” [7, 8] in chemical physics allows one to calculate the time dependent rate constant for a process involving large barrier by expressing the rate as an ensemble average of an infinite number of trajectories starting at the barrier top and ending on the product side at a specified later time. We compute the time dependent transmission coefficient using this method for a structureless particle surmounting a one dimensional inverted parabolic barrier. The work shows an elegant way of combining the traditional system plus reservoir model [9] and the method of reactive flux [7] and the normal mode analysis approach by Pollak [10] to calculate the time dependent transmission coefficient [11]. As expected our formula for the time dependent rate constant becomes equal to the transition state rate constant when one takes the zero time limit. Similarly Kramers rate constant is obtained by taking infinite time limit. Finally we conclude by noting that the method of analyzing the coupled Hamiltonian, introduced by Pollak is very powerful and it enables us to obtain analytical expressions for the time dependent reaction rate in case of Ohmic dissipation, even in underdamped case. The theory of first passage time [12] is one of the most important topics of research in chemical physics. As a model problem we consider a particle executing Brownian motion in full phase space with an absorbing boundary condition at a point in the position space we derive a very general expression of the survival probability and the first passage time distribution, irrespective of the statistical nature of the dynamics. Also using the prescription adopted elsewhere [13] we define a bound to the actual survival probability and an approximate first passage time distribution which are expressed in terms of the position-position, velocity-velocity and position-velocity variances. Knowledge of these variances enables one to compute the survival probability and consequently the first passage distribution function. We compute both the quantities for gaussian Markovian process and also for non-Markovian dynamics. Our analysis shows that the survival probability decays exponentially at the long time, irrespective of the nature of the dynamics with an exponent equal to the transition state rate constant [14]. Although the field of equilibrium thermodynamics and equilibrium statistical mechanics are well explored, there existed almost no theory for systems arbitrarily far from equilibrium until the advent of fluctuation theorems (FTs)[15] in mid 90�s. In general, these fluctuation theorems have provided a general prescription on energy exchanges that take place between a system and its surroundings under general nonequilibrium conditions and explain how macroscopic irreversibility appears naturally in systems that obey time reversible microscopic dynamics. Based on a Hamiltonian description we present a rigorous derivation [16] of the transient state work fluctuation theorem and the Jarzynski equality [17] for a classical harmonic oscillator linearly coupled to a harmonic heat bath, which is dragged by an external agent. Coupling with the bath makes the dynamics dissipative. Since we do not assume anything about the spectral nature of the harmonic bath the derivation is valid for a general non-Ohmic bath.

Silicon carbide bipolar junction transistors (BJTs) are attractive power switching devices because of the unique material properties of SiC with high breakdown electric field, high thermal conductivity and high saturated drift velocity of electrons. The SiC BJT has potential for very low specific on-resistances and this together with high temperature operation makes it very suitable for applications with high power densities. For SiC BJTs the common emitter current gain (β), the specific on-resistance (RSP_ON), and the breakdown voltage are important to optimize for competition with silicon based power devices. In this thesis, power SiC BJTs with high current gain β ≈ 60 , low on-resistance RSP_ON ≈ 5 mΩcm2, and high breakdown voltage BVCEO ≈ 1200 V have been demonstrated. The 1200 V SiC BJT that has been demonstrated has about 80 % lower on-state power losses compared to a typical 1200 V Si IGBT chip. A continuous epitaxial growth of the base-emitter layers has been used to reduce interface defects and thus improve the current gain. A significant influence of surface recombination on the current gain was identified by comparing the experiments with device simulations. In order to reduce the surface recombination, different passivation layers were investigated in SiC BJTs, and thermal oxidation in N2O ambient was identified as an efficient passivation method to increase the current gain. To obtain a low contact resistance, especially to the p-type base contact, is one critical issue to fabricate SiC power BJTs with low on-resistance. Low temperature anneal (~ 800 oC) of a p-type Ni/Ti/Al contact on 4H-SiC has been demonstrated. The contact resistivity on the ion implanted base region of the BJT was 1.3 × 10-4 Ωcm2 after annealing. The Ni/Ti/Al p-type ohmic contact was adapted to 4H-SiC BJTs fabrication indicating that the base contact plays a role for achieving a low on-resistance of SiC BJTs. To achieve a high breakdown voltage, optimized junction termination is important in a power device. A guard ring assisted Junction Termination Extension (JTE) structure was used to improve the breakdown voltage of the SiC BJTs. The highest breakdown voltage of the fabricated SiC BJTs was obtained for devices with guard ring assisted JTE using the base contact implant step for a simultaneous formation of guard rings. As a new approach to fabricate SiC BJTs, epitaxial regrowth of an extrinsic base layer was demonstrated. SiC BJTs without any ion implantation were successfully demonstrated using epitaxial regrowth of a highly doped p-type region and an etched JTE using the epitaxial base. A maximum current gain of 42 was measured for a 1.8 mm × 1.8 mm BJT with a stable and reproducible open base breakdown voltage of 1800 V. / QC 20100819

Oxygen gain is the difference in fuel cell performance operating on oxygen-depleted and oxygen-rich cathode fuel streams. Oxygen gain experiments provide insight into the degree of oxygen mass-transport resistance within a fuel cell. By taking these measurements under different operating conditions, or over time, one can determine how oxygen mass transport varies with operating modes and/or aging. This paper provides techniques to differentiate between mass-transport resistance within the catalyst layer and within the gas-diffusion medium for a polymer-electrolyte membrane fuel cell. Two extreme cases are treated in which all mass transfer limitations are located only (i) within the catalyst layer or (ii) outside the catalyst layer in the gas diffusion medium. These two limiting cases are treated using a relatively simple model of the cathode potential and common oxygen gain experimental techniques. This analysis demonstrates decisively different oxygen gain behavior for the two limiting cases. For catalyst layer mass transfer resistance alone, oxygen gain values are limited to a finite range of values. However, for gas diffusion layer mass transfer resistance alone, the oxygen gain is not confined to a finite range of values. This analysis is then extended to evaluate ionic effects within the catalyst layer. / text

Thesis (Ph. D.)--Ohio State University, 2006. / Title from first page of PDF file. Includes bibliographical references (p. 209-217).

Ce travail de doctorat a été réalisé dans le cadre d'un accord de cotutelle international entre l'Université de Salento (L3, Italie) et l'Université de Paris 13 (LSPM, France). L'objectif principal était la fabrication de contacts ohmiques sur des surfaces de diamant pour des applications telles que les détecteurs et les dispositifs de l’électronique. Les travaux au L3 ont été consacrés à l'étude du processus de graphitisation du diamant induit par laser afin de produire des électrodes de graphite sur des diamants intrinsèques. L'étude se concentre en particulier sur le développement d’un appareil expérimental pour l’écriture laser sur diamant tant sur les aspects matériel que logiciel, et un protocole a ainsi été développé pour la fabrication de contacts graphitiques segmentés sur de larges surfaces de diamant (cm²). Des travaux approfondis de caractérisation ont démontré la transition de phase diamant-graphite et le comportement ohmique pour les contacts électriques avec une résistivité de l'ordre de 10⁻⁵ Ω.m. Des détecteurs tout-carbone ont ainsi été développés et testés avec des faisceaux électroniques et positroniques de 450 MeV. Ils permettent d’ouvrir des perspectives en tant que cible active pour de nouvelles expériences de physique des hautes énergies (PADME) dans le cadre de l’étude de la matière noire. Le travail au LSPM a été consacré au développement d'un protocole permettant d'obtenir des contacts ohmiques sur des films diamant faiblement dopé au bore et terminé oxygène, élaborés par MPACVD. Les procédés de fabrication de contacts métalliques Ti/Au sur une structure mesa ainsi que l’implantation par des ions He, ont été développés afin d'induire une couche de graphite juste en dessous de la surface de diamant. Les mesures électriques sur des diamants légèrement dopés ([B] = 4 × 10¹⁷ cm⁻³) avec seulement des contacts métalliques ou graphitiques / métalliques ont montré que la présence de la couche graphitique rend les contacts ohmiques et conduisent à une résistance spécifique de contact égale à 3.3 × 10⁻⁴ Ω.cm². / This PhD work has been carried out in international cotutelle agreement between the University of Salento (L3, Italy) and the University of Paris 13 (LSPM, France). The main aim was the manufacturing of ohmic contacts on diamond surface for detector and electronic device applications. The work at L3 was dedicated to the laser-induced diamond graphitization process in order to produce graphitic electrodes on intrinsic diamonds. An experimental set-up dedicated to the laser writing technique on diamond has been developed in both hardware and software aspects and a protocol for the manufacturing of segmented graphitic contacts on diamond surface of large scale (cm²) has been implemented. An extensive characterization work has demonstrated the diamond-graphite phase transition and an ohmic electrical behaviour for the contacts with a resistivity of the order of ≈ 10⁻⁵ Ω.m. Eventually, an all-carbon detector has been developed and tested with 450 MeV electron and positron beams proving to be a good candidate in the role of active target for a new high-energy experiment (PADME) in the framework of the dark matter. The work at LSPM has been dedicated to the development of a protocol allowing reaching ohmic contacts on lightly boron doped diamond with oxygenated surface grown by MPACVD. The fabrication of Ti/Au metallic contact above a mesa structure has relied on a He ion implantation treatment to induce a graphitic layer underneath the diamond surface. The electrical measurements on lightly doped diamonds ([B] = 4 × 10¹⁷ cm⁻³) with metal or graphite / metal contacts have shown that the graphitic layer makes ohmic the contacts leading to a specific contact resistance as low as 3.3 × 10⁻⁴ Ω.cm². / Questo dottorato di ricerca è stato svolto in convenzione di cotutela internazionale tra l’Università del Salento (L3, Italia) e l’Università di Parigi 13 (LSPM, Francia). Il principale obiettivo è stato la fabbricazione di contatti ohmici su superficie di diamante per applicazioni come rivelatori e dispositivi elettronici. Il lavoro a L3 è stato dedicato allo studio del processo di grafitizzazione del diamante indotto da laser al fine di produrre elettrodi grafitici su diamanti intrinseci. In particolare, è stato sviluppato un apparato sperimentale dedicato alla tecnica di scrittura laser su diamante sia nelle componenti hardware che software, ed è stato realizzato un protocollo per la fabbricazione di contatti grafitici segmentati su superfici di diamante di grande scala (cm²). Un ampio lavoro di caratterizzazione ha dimostrato la transizione di fase diamante-grafite e il comportamento ohmico per i contatti elettrici con una resistività dell’ordine di 10⁻⁵ Ω.m. Pertanto, un rivelatore costituito solo di carbonio è stato sviluppato e testato con fasci elettronici e positronici di 450 MeV risultando essere un buon candidato nel ruolo di bersaglio attivo per un nuovo esperimento di fisica delle alte energie (PADME) nel contesto della materia oscura. Il lavoro a LSPM è stato dedicato allo sviluppo di un protocollo che ha consentito di ottenere contatti ohmici su diamanti leggermente drogati con boro e con superficie terminata con ossigeno, cresciuti mediante MPACVD. I processi di fabbricazione di contatti metallici Ti/Au sopra una struttura mesa sono stati sviluppato così come un trattamento di impiantazione a base di ioni di He al fine di indurre uno strato grafitico appena sotto la superficie del diamante. Le misure elettriche su diamanti leggermente drogati ([B] = 4 × 10¹⁷ cm⁻³) con contatti o solo metallici o grafitici / metallici hanno dimostrato che la presenza dello strato grafitico rende i contatti ohmici e comporta una resistenza specifica di contatto pari a 3.3 × 10⁻⁴ Ω.cm².

Ces travaux de thèse sont consacrés à l’étude de l’activation des dopants implantés dans le carbure de silicium. L’objectif est de proposer des conditions d’implantation optimisées pour réaliser le dopage de type n dans le 3C-SiC et de type p dans le 4H-SiC.Nous avons tout d’abord étudié les implantations de type n dans le 3C-SiC. Pour cela, des implantations de N, de P et une co-implantation N&P avec les recuits d’activation associés ont été étudiés. L’implantation d’azote suivie d’un recuit à 1400°C-30min a permis une activation proche de 100% tout en conservant une bonne qualité cristalline. Une étude sur les propriétés électriques des défauts étendus dans le 3C-SiC a également été réalisée. A l’aide de mesures SSRM, nous avons mis en évidence l’activité électrique de ces défauts, ce qui rend difficile la réalisation de composants électroniques sur le 3C-SiC.Nous avons ensuite réalisé une étude du dopage de type p par implantation d’Al dans le 4H-SiC, en fonction de la température d’implantation et du recuit d’activation. Nous avons pu montrer qu’une implantation à 200°C suivie d’un recuit à 1850°C-30min donne les meilleures résultats en termes de propriétés physiques et électriques. / This work was dedicated to the activation of implanted dopants in 3C-SiC and 4H-SiC. The goal is to propose optimized process conditions for n-type implantation in 3C-SiC and for p-type in 4H-SiC.We have first studied the n-type implantation in 3C-SiC. To do so, N, P implantations, N&P co-implantation and the associated annealings were performed. The nitrogen implanted sample, annealed at 1400°C-30 min evidences a dopant activation rate close to 100% while maintaining a good crystal quality. Furthermore, the electrical properties of extended defects in 3C-SiC have been studied. Using the SSRM measurements, we have evidenced for the first time that these defects have a very high electrical activity and as a consequence on future devices.Then, we have realized a study on p-type doping by Al implantation in 4H-SiC with different implantation and annealing temperatures. Al implantation at 200°C followed by an annealing at 1850°C-30min lead to the best results in terms of physical and electrical properties.

Les convertisseurs à base de Si atteignent leurs limites. Face à ces besoins, le GaN, avec sa vitesse de saturation des électrons et le champ électrique de claquage élevés est candidat idéal pour réaliser des redresseurs, surtout s’il est épitaxié sur substrat à bas cout. Ce travail est dédié au développement des diodes Schottky sur AlGaN/GaN. Une couche de SiNx en faible traction a été obtenue. Un contact ohmique de Ti/Al avec une gravure partiel a donné une Rc de 2.8 Ω.mm avec une résistance Rsh de 480 Ω/□. Des diodes Schottky avec les étapes issues de ces études ont été fabriqué. La diode recuite à 400 °C avec 30 nm de profondeur de gravure a montré une hauteur de barrière de 0,82 eV et un facteur d'idéalité de 1,49. La diode a présenté une très faible densité de courant de fuite de 8.45x10-8 A.mm-1 à -400 V avec une tension de claquage entre 480 V et 750 V. / Si-based devices for power conversion applications are reaching their limits. Wide band gap GaN is particularly interesting due to the high electron saturation velocity and high breakdown electric field, especially when epitaxied on low cost substrates such as Si. This work was dedicated to the development and fabrication of the Schottky diode on AlGaN/GaN on Si. SiNx passivation in very low tensile strain is used. Ti (70 nm)/Al (180 nm) partially recessed ohmic contacts annealed at 800 ºC exhibited a 2.8 Ω.mm Rc with a sheet resistance of 480 Ω/sq. Schottky diodes with the previously cited passivation and ohmic contact were fabricated with a fully recessed Schottky contact annealed at 400 ºC. A Schottky barrier height of 0.82 eV and an ideality factor of 1.49 were obtained. These diodes also exhibited a very low leakage current density (up to -400 V) of 8.45x10-8 A.mm-1. The breakdown voltage varied between 480 V and 750 V.

Submitted by Luciana Ferreira (lucgeral@gmail.com) on 2018-09-12T10:47:41Z No. of bitstreams: 2 Dissertação - Airton Modesto da Cunha - 2018.pdf: 36005906 bytes, checksum: 5f095bd3c548d6f6e958d83f126908ef (MD5) license_rdf: 0 bytes, checksum: d41d8cd98f00b204e9800998ecf8427e (MD5) / Approved for entry into archive by Luciana Ferreira (lucgeral@gmail.com) on 2018-09-12T10:50:15Z (GMT) No. of bitstreams: 2 Dissertação - Airton Modesto da Cunha - 2018.pdf: 36005906 bytes, checksum: 5f095bd3c548d6f6e958d83f126908ef (MD5) license_rdf: 0 bytes, checksum: d41d8cd98f00b204e9800998ecf8427e (MD5) / Made available in DSpace on 2018-09-12T10:50:15Z (GMT). No. of bitstreams: 2 Dissertação - Airton Modesto da Cunha - 2018.pdf: 36005906 bytes, checksum: 5f095bd3c548d6f6e958d83f126908ef (MD5) license_rdf: 0 bytes, checksum: d41d8cd98f00b204e9800998ecf8427e (MD5) Previous issue date: 2018-08-09 / The present dissertation is the result of the educational, “Teaching model of electrical resistors to describe fractures in physical systems”, product worked in a class of the third year of high school of the State School Prof. Marcolino de Barros of the municipality of Patos de Minas-MG. In which, we present a simple pedagogical model with the purpose of studying the complex process of ruptures in physical systems. For this, we developed an experimental model together with its theoretical counterpart where we consider a system of electric resistors network subject to a potential difference and analyze the current that passes through the system as a function of the random removal of their resistive components. We use a circuit board, voltage source stabilized at a pre-established potential difference, and a resistor network with a few ohms units each. After the proposed experiments are executed, we obtained appropriate experimental data and from these graphs are generated with which the dependence of the current through the circuit with the interruption of the joints is shown. Taking into account that this system behaves as an ohmic system, the model is used to study several relevant physical concepts. As is the case of an elastic solid subject to Hooke’s law- like deformations, this is then a very broad model. / A presente dissertação é resultado de nosso produto educacional, “Modelo pedagógico de resistores elétricos para descrever fraturas em sistemas físicos”, trabalhado em uma turma do terceiro ano do ensino médio da Escola Estadual Prof. Marcolino de Barros do município de Patos de Minas-MG. No qual, apresentamos um modelo pedagógico simples com a finalidade de estudar o complexo processo de rupturas em sistemas físicos. Para tanto, desenvolvemos um modelo experimental munido de sua contraparte teórica onde consideramos um sistema de resistores elétricos sujeito a uma diferença de potencial e analisamos a corrente que passa através do sistema em função da remoção aleatória doscomponentes resistivos. Usamos uma placa de circuitos, fonte de tensão estabilizada em uma diferença de potencial pré -estabelecida e uma malha de resistores com algumas unidades de ohms cada. Realizadas as experiências propostas obtivemos apropriados dados experimentais e a partir destes foram gerados gráficos com os quais são mostrados a dependência da corrente através do circuito com a interrupção das junções. Levando em consideração que este sistema se comporta como um sistema ôhmico, o modelo é usado para estudar vários conceitos físicos relevantes. Como é o caso de um solido elástico sujeito a deformações do tipo lei de Hooke, sendo este então um modelo de caráter bem amplo.

Un code de simulation de plasma à deux dimensions électrostatique à coordonnées cartésiennes Particle-in-cell/ Monte Carlo Collision (PIC/MCC) est présenté, incluant un nouveau traitement de l'équilibre des charges aux limites diélectriques. Il est utilisé pour simuler un plasma dans le gaz Ar dans un réacteur à plaques parallèles à couplage capacitif à radiofréquence a géométrie symétrique avec une paroi latérale diélectrique épaisse. La paroi latérale diélectrique protège efficacement le plasma du champ électrique augmenté au niveau de la jonction entre l'électrode alimentée et l'électrode à la masse, dont on a montré précédemment qu'elle produisait une augmentation localise de la densité de plasma. Néanmoins, un réchauffement accru des électrons est observé dans une région adjacente à la limite diélectrique, conduisant à des maxima de le taux d'ionisation, de la densité du plasma et du flux ionique vers les électrodes dans cette région. Les différents composants du chauffage électronique sont dérivés des simulations PIC/MCC et montrent que cette augmentation du chauffage électronique provient d'un chauffage ohmique accru dans la direction axiale lorsque la densité électronique diminue vers la paroi latérale. Nous avons étudié la validité de différentes formules analytiques pour estimer le chauffage ohmique en les comparant aux résultats PIC. Le chauffage des électrons à composantes x a proximité des coins a été observé aux fréquences d'excitation plus élevées, provenant d'un champ RF oscillant important dans la direction x. / A Cartesian-coordinate two-dimensional electrostatic Particle-in-cell/Monte-Carlo Collision (PIC/MCC) plasma simulation code is presented, including a new treatment of charge balance at dielectric boundaries. It is used to simulate an Ar plasma in a symmetric radiofrequency capacitively-coupled parallel-plate reactor with a thick dielectric side-wall. The dielectric side-wall effectively shields the plasma from the enhanced electric field at the powered-grounded electrode junction, which has previously been shown to produce locally enhanced plasma density. Nevertheless, enhanced electron heating is observed in a region adjacent to the dielectric boundary, leading to maxima in ionization rate, plasma density and ion flux to the electrodes in this region. The electron heating components are derived from the PIC/MCC simulations and show that this enhanced electron heating results from increased Ohmic heating in the axial direction as the electron density decreases towards the side-wall. We investigated the validity of different analytical formulas to estimate the Ohmic heating by comparing them to the PIC results. The x component electron heating near the corners was observed at higher driving frequency, which is caused by a significant RF oscillating field in the x direction.