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The present research work focuses on the fabrication and characterization of epitaxial heterostructures of 0.7 Pb(Mg1/3N2/3)O3 – 0.3 PbTiO3 (PMN-PT) and La0.6Sr0.4MnO3 (LSMO) using multi target pulsed laser ablation technique. Different heterostructures such as bilayered thin films with different individual layer thickness; symmetric and asymmetric superlattices of different periodicities were fabricated. Roles of individual layer thickness, elastic strain and interfaces between PMN-PT and LSMO layers on different physical properties were studied. An attempt has been made to understand the influence of the charge depleted interface states in addition to the probable strain mediated elastic coupling effect on the observed magneto-dielectric response in these engineered heterostructures. Chapter 1 provides a brief introduction to the multiferroic materials, occurrence of magnetoelectric (ME) coupling in them, their possible technological applications and the challenges involved. A short historical account of the multiferroic research is discussed to emphasize the importance of artificial multiferroics, particularly the engineered thin film heterostructures. Finally the specific objectives of the current research are outlined. Chapter 2 deals with the various experimental studies carried out in this research work. It gives the details of the experimental set up and the basic operation principles of various structural and physical characterizations of the materials prepared. A brief explanation of material fabrication, structural, micro structural and physical property measurements is discussed. Chapter 3 addresses the phase formation, structural and microstructural features of the engineered heterostructures fabricated epitaxially on single crystalline LaAlO3 (100) substrates. A thin layer of LaNiO3 used as the bottom electrode material for electrical characterizations was grown on the bare substrate prior to the fabrication of the PMN-PT/LSMO heterostructures. The structural and microstructural features of different individual layers were also studied by fabricating single layer thin films of the materials. The effects of individual layer thicknesses on the surface roughness, grain size and lattice strain of the heterostructures are discussed. Chapter 4 deals with the ferroelectric studies of the PMN-PT/LSMO epitaxial heterostructures. Polarization hysteresis (P-E), capacitance – voltage (C-V) and pulsed polarization (PUND) measurements were carried out as functions of applied voltage, frequency and delay time to characterize the ferroelectric properties of the heterostructures. All the bilayered heterostructures exhibited robust ferroelectric response and contribution of non – remnant components to their polarization behaviour were observed from the P-E studies. The symmetric superlattices did not exhibit any ferroelectricity due to high leakage current conduction. After optimizing the LSMO and PMN-PT layer thicknesses ferroelectricity was observed in the asymmetric superlattices accompanied by substantial reduction in the leakage current conduction. The P-E loops were found to be asymmetrically shifted along the electric field axis in all the superlattices indicating the presence of dielectric passive layers and strong depolarizing fields at the interfaces between PMN-PT and LSMO. Chapter 5 deals with the ferromagnetic studies of the PMN-PT/LSMO heterostructures. All the heterostructures exhibited ferromagnetic behaviour in the temperature range of 10 K – 300 K with an in plane magnetic easy axis ([100]) compared to the out of plane ([001]) direction. The magnetization behaviour of the bilayers and superlattices as a function of magnetic field strength, temperature and different individual layer thickness of PMN-PT and LSMO are discussed in terms of the oxygen deficiency, magnetic dead layers and lattice strain effects in these engineered epitaxial heterostructures. Chapter 6 addresses the magneto-dielectric response, dielectric properties and ac conduction properties of the engineered biferroic heterostructures. In order to investigate the manifestation of strain mediated ME coupling in these heterostructures their dielectric response as a function of ac electric signal frequency have been studied under different static magnetic fields over a wide range of temperatures. The appearance of magneto-capacitance and its dependence on magnetic field strength and temperature along with the magnetoresistive characteristics of the heterostructures suggested that the charge depleted interfaces between PMN-PT and LSMO can have an effect on the observed dielectric response in addition to the probable strain mediated ME coupling. Dielectric characterization of the heterostructures performed over a wide range of temperature indicated a Maxwell-Wagner type relaxation mechanism. The manifestation of Maxwell-Wagner effect and the very low activation energy of ac conductivity obtained from the ac conduction studies revealed the strong influence of the charge depleted interfaces between PMN-PT and LSMO on the dielectric properties of the heterostructures. Chapter 7 deals with the dc leakage current conduction characteristics of the heterostructures. The leakage current characterization was performed over a wide range of temperature and analyzed in the framework of different models to investigate the leakage mechanism. All the heterostructures were found to obey the power law I∝Vα over the entire range of temperature with different values of α at different applied voltages. The bilayered heterostructures exhibited ohmic conduction in the lower electric field region and space charge limited conduction was observed at higher electric fields. On the other hand the low field dc conduction behaviour of the superlattices could not be attributed unambiguously to a single mechanism. Depending on the superlattice periodicity the low field conduction behaviour was dominated by either Poole-Frenkel (PF) emission or a combined contribution from the PF effect and ohmic conduction. At higher electric fields all the superlattices exhibited space charge limited conduction. Chapter 8 gives the summary and conclusions of the present study and also discusses about the future work that could give more insight into the understanding of the engineered epitaxial biferroic heterostructures.

Les systèmes d’information actuels reposent fortement sur les technologies micro-ondes utilisées pour les communications hertziennes. L’amélioration des performances des MEMS radio fréquence aptes à fonctionner dans la bande X (8 GHz et 12 GHz) est un enjeu important pour des applications de télécommunications mais aussi pour les applications radar. Pour y parvenir l’intégration de matériaux ferroélectriques à haute constante diélectrique est requise. Les matériaux qui possèdent de telles propriétés et qui sont les plus adaptés, sont les composés qui dérivent de la structure pérovskite. Intégrer ce type de matériaux dans des commutateurs radio-fréquence (MEMS-RF) pose de nouveaux chalenges en termes de maîtrise du matériau et de compatibilité avec les technologies MEMS existantes. Cette thèse s’est portée sur le composé PMN-PT avec la composition 65/35 qui possède une permittivité relative supérieure à 10000 sous forme de matériau massif.Ce travail de thèse a été consacré à l’étude de l’intégration du composé PMN-PT dans des composants passifs que sont les commutateurs MEMS. Dans la gamme de fréquence d’intérêt, de 500 MHz jusqu’à 20 GHz, les propriétés de ces matériaux ont été peu étudiées sur les matériaux massifs et encore moins sous forme de films minces. L’objectif de cette thèse était de réaliser les couches minces ferroélectriques et de tester leur compatibilité dans l’ensemble du fonctionnement d’un composant MEMS mais aussi de mener une étude réciproque : l’analyse des FeMEMS (MEMS basé sur les ferroélectriques) permettant de compléter les connaissances de ces matériaux dans cette gamme de fréquence. Ce travail est d’intérêt pour l’industrie de la technologie MEMS mais aussi pour la science des matériaux ferroélectriques mais aussi par la compréhension des mécanismes physiques gouvernant aux propriétés diélectriques en termes de pertes notamment dans ce domaine de fréquences.Les caractérisations des MEMS-RF présentées dans cette thèse ont démontré la compatibilité du MEMS PMN-PT dans la gamme de fréquence entre 500MHz et 10 GHz avec de très bonnes performances. En utilisant cette adaptation, la technologie actuelle est ainsi capable de couvrir tous les bandes de fréquence les plus importantes : la bande de télécommunication civile de 1 GHz à 5 GHz en utilisant le PMN-PT, la bande X pour les satellites entre 5 GHz et 15 GHz avec PZT et la bande de haute fréquence de 15 GHz à 40 GHz pour la défense avec les diélectriques traditionnels (Si3N4). / The current information systems depend strongly on the microwave technology used for wireless communications. The enhanced performance of MEMS radio frequency capacity in X-band (8 GHz and 12 GHz) is an important issue not only for Telecom applications but also for Radar applications. The integration of ferroelectric materials with high-k t is highly demanded to replace the traditional dielectrics. This high-k property is accessible for compounds derived from the perovskite structure. Incorporating such materials in switches radio-frequency (RF-MEMS) impose however new chalenges in terms of the compatibility with the existing MEMS technologies. This thesis is focused on the compound PMN-PT with composition 65/35, which has a relative permittivity greater than 10,000 in the form of bulk material.This thesis has been devoted to the study of the integration of PMN-PT thin films in passive components such as MEMS switches. In the frequency range of interest, 500 MHz to 20 GHz, the properties of these materials have not been studied in bulk materials and even less in the form of thin films. The aim of this thesis was to fabricate the ferroelectric thin films and test their compatibility in the overall operation of a MEMS component. This study provides a reciprocal analysis FeMEMS (MEMS based on ferroelectrics) to complete knowledge of these materials in this frequency range. This work makes interest to both the industry and MEMS ferroelectric materials science who is trying to understand the physical mechanisms governing the dielectric properties in terms of losses in this particular range of frequencies.The characterizations of RF-MEMS presented in this thesis have demonstrated the compatibility of MEMS PMN-PT in the frequency range between 500MHz to 10 GHz with very good performance. Using this adaptation, the current technology is able to cover the most important frequency bands: the civil band telecommunication 1 GHz to 5 GHz using the PMN-PT, the X-band satellites between 5 GHz and 15 GHz with PZT and high frequency band of 15 GHz to 40 GHz for the defense with traditional dielectric (Si3N4).

Electron emission from ferroelectric materials is initiated by a variation of the spontaneous polarization. It is the main focus of this work to develop ferroelectric cathodes, which are characterized by a significantly decreased excitation voltage required to initiate the electron emission process. Particular attention is paid to the impact of the polarization on the emission process. Two materials are investigated. Firstly, relaxor ferroelectric lead magnesium niobate - lead titanate (PMN-PT) single crystals are chosen because of their low intrinsic coercive field. Electron emission current densities up to 5 · 10^(−5) A/cm² are achieved for excitation voltages of 160 V. A strong enhancement of the emission current is revealed for the onset of a complete polarization reversal. Secondly, lead zirconate titanate (PZT) thin films are investigated. A new method to prepare top electrodes with sub-micrometer sized, regularly patterned apertures is introduced and a stable electron emission signal is measured from these structures for switching voltages < 20 V. Furthermore, a detailed analysis of the polarization switching process in the PMN-PT samples is given, revealing a spatial rotation of the polarization vector into crystallographic easy axes, as well as the nucleation of reversed nano-domains. Both processes are initiated at field strengths well below the coercive field. The dynamics of the polarization reversal are correlated to the electron emission measurements, thus making it possible to optimize the efficiency of the investigated cathodes. / Die Ursache für Elektronenemission aus ferroelektrischen Materialien ist eine Veränderung des Zustandes der spontanen Polarisation. Gegenstand der vorliegenden Arbeit ist eine Verringerung der dafür nötigen Anregungsspannung, wobei besonderes Augenmerk auf die Rolle der ferroelektrischen Polarisation innerhalb des Emissionsprozesses gelegt wird. Es werden zwei verschiedene Materialien untersucht. Das Relaxor-Ferroelektrikum Bleimagnesiumniobat - Bleititanat (PMN-PT) wurde aufgrund seines geringen Koerzitivfeldes ausgewählt. Es konnten Emissionsstromdichten von bis zu 5·10^(−5) A/cm² bei einer Anregungsspannung von 160 V erreicht werden. Bei Einsetzen eines vollständigen Umschaltens der Polarisation wurde eine deutliche Verstärkung des Emissionsstromes festgestellt. Desweiteren werden Untersuchungen an Bleizirkoniumtitanat (PZT) Dünnfilmen gezeigt. Eine neue Methode, eine Elektrode mit periodisch angeordneten Aperturen im Submikrometerbereich zu präparieren, wird vorgestellt. Diese Strukturen liefern ein stabiles Emissionssignal für Anregungsspannungen < 20 V. Eine detailierte Analyse des Schaltverhaltens der Polarisation der PMN-PT Proben zeigt sowohl eine Rotation des Polarisationsvektors als auch eine Nukleation umgeschaltener Nanodomänen. Beide Prozesse starten bei Feldstärken unterhalb des Koerzitivfeldes. Die ermittelte Zeitabhängigkeit des Schaltprozesses erlaubt Rückschlüsse auf den Emissionsprozess und erlaubt es, die Effizienz der untersuchten Kathoden weiter zu optimieren.

Nanomagnetic logic, incorporating logic bits in the magnetization orientations of single-domain nanomagnets, has garnered attention as an alternative to transistor-based logic due to its non-volatility and unprecedented energy-efficiency. The energy efficiency of this scheme is determined by the method used to flip the magnetization orientations of the nanomagnets in response to one or more inputs and produce the desired output. Unfortunately, the large dissipative losses that occur when nanomagnets are switched with a magnetic field or spin-transfer-torque inhibit the promised energy-efficiency. Another technique offering superior energy efficiency, “straintronics”, involves the application of a voltage to a piezoelectric layer to generate a strain which is transferred to an elastically coupled magnetrostrictive layer, causing magnetization rotation. The functionality of this scheme can be enhanced further by introducing magnetocrystalline anisotropy in the magnetostrictive layer, thereby generating four stable magnetization states (instead of the two stable directions produced by shape anisotropy in ellipsoidal nanomagnets). Numerical simulations were performed to implement a low-power universal logic gate (NOR) using such 4-state magnetostrictive/piezoelectric nanomagnets (Ni/PZT) by clocking the piezoelectric layer with a small electrostatic potential (~0.2 V) to switch the magnetization of the magnetic layer. Unidirectional and reliable logic propagation in this system was also demonstrated theoretically. Besides doubling the logic density (4-state versus 2-state) for logic applications, these four-state nanomagnets can be exploited for higher order applications such as image reconstruction and recognition in the presence of noise, associative memory and neuromorphic computing. Experimental work in strain-based switching has been limited to magnets that are multi-domain or magnets where strain moves domain walls. In this work, we also demonstrate strain-based switching in 2-state single-domain ellipsoidal magnetostrictive nanomagnets of lateral dimensions ~200 nm fabricated on a piezoelectric substrate (PMN-PT) and studied using Magnetic Force Microscopy (MFM). A nanomagnetic Boolean NOT gate and unidirectional bit information propagation through a finite chain of dipole-coupled nanomagnets are also shown through strain-based "clocking". This is the first experimental demonstration of strain-based switching in nanomagnets and clocking of nanomagnetic logic (Boolean NOT gate), as well as logic propagation in an array of nanomagnets.

Les systèmes d'information actuels reposent fortement sur les technologies micro-ondes utilisées pour les communications hertziennes. L'amélioration des performances des MEMS radio fréquence aptes à fonctionner dans la bande X (8 GHz et 12 GHz) est un enjeu important pour des applications de télécommunications mais aussi pour les applications radar. Pour y parvenir l'intégration de matériaux ferroélectriques à haute constante diélectrique est requise. Les matériaux qui possèdent de telles propriétés et qui sont les plus adaptés, sont les composés qui dérivent de la structure pérovskite. Intégrer ce type de matériaux dans des commutateurs radio-fréquence (MEMS-RF) pose de nouveaux chalenges en termes de maîtrise du matériau et de compatibilité avec les technologies MEMS existantes. Cette thèse s'est portée sur le composé PMN-PT avec la composition 65/35 qui possède une permittivité relative supérieure à 10000 sous forme de matériau massif.Ce travail de thèse a été consacré à l'étude de l'intégration du composé PMN-PT dans des composants passifs que sont les commutateurs MEMS. Dans la gamme de fréquence d'intérêt, de 500 MHz jusqu'à 20 GHz, les propriétés de ces matériaux ont été peu étudiées sur les matériaux massifs et encore moins sous forme de films minces. L'objectif de cette thèse était de réaliser les couches minces ferroélectriques et de tester leur compatibilité dans l'ensemble du fonctionnement d'un composant MEMS mais aussi de mener une étude réciproque : l'analyse des FeMEMS (MEMS basé sur les ferroélectriques) permettant de compléter les connaissances de ces matériaux dans cette gamme de fréquence. Ce travail est d'intérêt pour l'industrie de la technologie MEMS mais aussi pour la science des matériaux ferroélectriques mais aussi par la compréhension des mécanismes physiques gouvernant aux propriétés diélectriques en termes de pertes notamment dans ce domaine de fréquences.Les caractérisations des MEMS-RF présentées dans cette thèse ont démontré la compatibilité du MEMS PMN-PT dans la gamme de fréquence entre 500MHz et 10 GHz avec de très bonnes performances. En utilisant cette adaptation, la technologie actuelle est ainsi capable de couvrir tous les bandes de fréquence les plus importantes : la bande de télécommunication civile de 1 GHz à 5 GHz en utilisant le PMN-PT, la bande X pour les satellites entre 5 GHz et 15 GHz avec PZT et la bande de haute fréquence de 15 GHz à 40 GHz pour la défense avec les diélectriques traditionnels (Si3N4).

The present research work mainly focuses on fabrication of compositionally modulated multilayers of (l−x) Pb(Mgi/3N2/3)O3 - x PbTiO3 (PMNPT) through multi target pulsed laser ablation technique. Heterostructures like compositionally varying multilayers; multilayers with graded interface and a ferroelectric [PbTiO3 (PT)] and relaxor (PMN) superlattices of different periodicities were fabricated. Role of artificially enhanced chemical heterogeneity and strain on enhancement of physical property was studied. Dimensional dependent ferroelectric and antiferroelectric type of polarization behavior was observed in the case of both compositionally varying multilayers and the superlattice structures fabricated. The dimensional dependence of various ferroelectric interactions like long-range, short-range and interfacial coupling among the layers was studied. The phase transition behavior and dielectric studies were carried out on these heterostructures. An artificial superlattice of a relaxor ferroelectric with a ferromagnetic layer was also fabricated for magnetoelectric applications. Chapter 1 provides a brief introduction to ferroelectric (FE) heterostructures, their technological applications and the fundamental physics involved in ferroelectric heterostructures. Initially an introduction to the technological importance and advantages of ferroelectric heterostructures is provided. A brief introduction to relaxor ferroelectrics and their characteristic structural features are discussed. A brief review of the ferroelectric heterostructures both from fundamental science and technological point of view is provided. Finally the specific objectives of the current research are outlined. Chapter 2 deals with the various experimental studies carried out in this research work. It gives the details of the experimental set up and the basic operation principles of various structural and physical characterizations of the materials prepared. A brief explanation of material fabrication, structural, micro structural and physical property measurements is discussed. Chapter 3 addresses the problem of phase formation of PMNPT over platinum substrates and the role of the template over the phase formation, micro structural evolution and polarization behavior. The surface modifications of bare Pt under the processing conditions used to fabricate PMNPT was also studied. An intermediate roughening mechanism was observed. The role of LSCO over the micro structural evolution of PMNPT, the minimum thickness of LSCO required for phase formation of PMNPT, role of LSCO on phase formation and its effect on the polarization behavior of PMNPT of constant thickness are discussed. Chapter 4 deals with fabrication of different types of relaxor based heterostructures studied in this work. Three different types of PMNPT based heterostructures was fabricated using a multi target laser ablation chamber. The first type of heterostructure is a compositionally modulated multilayer thin film with four different compositions of (1-x) PMN - x PT (x = 0.0, 0.1, 0.2, 0.3 at.%) and is represented as PMNPT multilayer (ML) further in this thesis. PMNPT ML with different individual layer thickness was fabricated (30, 40, 60, 80, 100 and 120 nm). The second type of heterostructure is the PMNPT ML of same dimensions, but associated with a post deposition annealing to achieve a graded interface between the multilayers present and will be named as PMNPT graded or simply graded, further in this thesis. The third type of heterostructure is an artificial superlattice of a simple relaxor ferroelectric (PMN) and a normal ferroelectric (PT), which will be named as PMN-PT superlattice (SL) further in this thesis. The crystallinity, micro structural features and the nature of the interface present in the fabricated heterostructures were studied using various experimental techniques. Chapter 5 deals with the FE studies of compositionally modulated PMNPT ML thin films and PMNPT graded thin films. The ML with individual layer thickness of 120nm exhibited a clear FE behavior but with a reduced remnant polarization and reduced non linear behavior in capacitance - voltage (C-V) characteristics. But on varying the dimensions of the individual layers (30, 40, 60, 80, 100 and 120nm) a large dielectric tunability of around 74% was observed at lOOnm. The polarization behavior of these ML exhibited an interesting size dependent polarization behavior. A FE behavior was observed at low dimensions of 40 and 30nm. An AFE type of loop was observed at 60 and 80nm of individual layer thickness and at lOOnm it showed a clear paraelectric kind of behavior both in polarization hysteresis (P-E) and C-V studies. Graded films exhibited clear FE behavior at all dimensions fabricated and hence the role of interface in developing a critical polarization behavior in the case of ML was confirmed. Apart from the fundamental physics these ML and graded films permits the tunability of their physical properties on just varying the individual layer thickness. The dimensional dependence of dielectric tunability of ML and graded films were studied and it was found that in the case of a ML the dielectric tunability was high at lOOnm individual layer thickness and at 40nm in the case of a graded film. Thus the interfacial strain, interfacial coupling and chemical heterogeneity give an opportunity to engineer the physical property depending on the requirements. Chapter 6 deals with ferroelectric studies (P-E, C-V) of PMN-PT superlattice structures with different periodicities. The dimensional range in which, the interfacial coupling dominates the overall polarization behavior of the system was analyzed. A dimensional dependent FE and AFE behavior was observed in the PMN-PT SL structures. The dimensional dependent tunability of physical properties was achieved. The different interactions like short range, long range and the interfacial coupling and their dimensional dependent behavior was studied. The dimensional dependent tunability of the P-E and C-V behavior was observed both in symmetric and asymmetric SL structures. Chapter 7 deals with the relaxor behavior of the fabricated PMNPT ML, graded and PMN-PT SL structures. The dielectric phase transition of a PMNPT ML exhibited local maxima in the real part of dielectric constant with temperature. The local maxima correspond to the temperature regime at which, the individual layer dielectric maxima dominates the phase transition behavior of the ML structure. In the case of graded films an averaged behavior of all the compositions, with an enhanced diffusivity was observed. All the characteristic features of a relaxor ferroelectric were observed in the phase transition behavior of a graded thin film. The dielectric maxima exhibited a Vogel-Fulcher type of behavior with frequency, A similar averaged behavior was observed in the phase transition behavior of PMNPT ML at low dimensions (< 40 nm) of the individual layer. The dielectric phase transition behavior of PMN-PT SL structures of different periodicities was studied. No characteristic of a relaxor ferroelectric was observed for the periodicities in the range of 10 to 50 nm. At 60 nm periodicity the individual layer dominance was observed in the phase transition behavior of the SL structure. The phase transition behavior was found to be insensitive to the interfacial coupling in both the PMNPT ML and PMN-PT SL. Chapter 8 deals with the dielectric response, impedance spectroscopy and the DC leakage characteristics of the relaxor heterostructures. All the relaxor heterostructures fabricated, exhibited low frequency dispersion, similar to that of the Jonscher's universal type of relaxation behavior. The anomalous dispersion common of a relaxor ferroelectric was observed in the imaginary dielectric constant at high frequencies. A.multi debye type of relaxation behavior was observed in the impedance analysis and the relaxation time was found to obey Vogel-Fulcher type of relation with temperature. The leakage current of all the heterostructures were found to be few orders less than the homogeneous single layer thin films. A space charge limited conduction was observed in all the heterostructures fabricated. Chapter 9 deals with an attempt of realizing the magnetoelectric effect in an artificial superlattice structure consisting ferromagnetic [Lao.6Sro.4Mn03 (LSMO)] and ferroelectric (PMNPT 70-30) layers. Both symmetric and asymmetric SL structures were fabricated and the asymmetric SL exhibited both room temperature ferromagnetic and ferroelectric behavior. A weak influence of magnetic field over the polarization behavior was observed. The magnetic behavior and its influence over electrical behavior were found to be dominated by the interface and were confirmed from the Maxwell-Wagner type of relaxation. Chapter 10 gives the summary and conclusions of the present study and also discusses about the future work that could give more insight into the understanding of the relaxor heterostructures.

On demand single-photon and entangled-photon sources are key building-blocks for many proposed photonic quantum technologies. For practical device applications, epitaxially grown quantum dots (QDs) are of increasing importance due to their bright photon emission with sharp line width. Particularly, they are solid-state systems and can be easily embedded within a light-emitting diode (LED) to achieve electrically driven sources. Therefore, one would expect a full-fledged optoelectronic quantum network that is running on macroscopically separated, QD-based single- and entangled-photon devices. An all-electrically operated wavelength-tunable on demand single-photon source (SPS) is demonstrated first. The device consists of a LED in the form of self-assembled InGaAs QDs containing nanomembrane integrated onto a piezoelectric crystal. Triggered single photons are generated via injection of ultra-short electrical pulses into the diode, while their energy can be precisely tuned over a broad range of about 4.8 meV by varying the voltage applied to the piezoelectric crystal. High speed operation of this single-photon emitting diode up to 0.8 GHz is demonstrated. In the second part of this thesis, a fast strain-tunable entangled-light-emitting diode (ELED) is demonstrated. It has been shown that the fine structure splitting of the exciton can be effectively overcome by employing a specific anisotropic strain field. By injecting ultra-fast electrical pulses to the diode, electrically triggered entangled-photon emission with high degree of entanglement is successfully realized. A statistical investigation reveals that more than 30% of the QDs in the strain-tunable quantum LED emit polarization-entangled photon-pairs with entanglement-fidelities up to f+ = 0.83(5). Driven at the highest operation speed ever reported so far (400 MHz), the strain-tunable quantum LED emerges as unique devices for high-data rate entangled-photon applications. In the end of this thesis, on demand and wavelength-tunable LH single-photon emission from strain engineered GaAs QDs is demonstrated. Fourier-transform spectroscopy is performed, from which the coherence time of the LH single-photon emission is studied. It is envisioned that this new type of LH exciton-based SPS can be applied to realize an all-semiconductor based quantum interface in the foreseeable distributed quantum networks.

The present research work mainly focuses on the fabrication of 0.85PMN-0.15PT thin film relaxor ferroelectrics for energy harvesting applications. Chapter 1 gives a brief review about why energy harvesting is required and the different ways it can be scavenged. An introduction to relaxor ferroelectrics and their characteristics structural features are discussed. A brief introduction is given about charge storage, electrocaloric effect , DC-EFM and integration over Si substrate is discussed. Finally, the specific objectives of the current research are outlined. Chapter 2 deals with the various experimental studies carried out in this research work. It gives the details of the experimental set up and the basic operation principles of various structural and physical characterizations of the materials prepared. A brief explanation of material fabrication, Microstructural and physical property measurements is discussed. Chapter3 involves the optimization process carried out to contain a phase pure PMN-PT structure without any pyrochlore phase. The optimization process is an important step in the fabrication of a thin film as the quality of any device is determined by their structural and Microstructural features. XRD, SEM, AFM were used to characterize the observed phase formation in these films. The optimizing domain images of polycrystalline 0.85PMN-0.15PT thin films on La0.5Sr0.5CoO3/ (111) Pt/TiO2/SiO2/Si substrates deposited at different oxygen partial pressures are presented. The oxygen pressure has a drastic influence on the film growth and grain morphology which are revealed through XRD and SEM characterization techniques. The presence of oxygen vacancies have found to influence the distribution of polar nanoregions and their dynamics which are visualized using domain images acquired by DC-EFM In Chapter 7 the piezoelectric response of 0.85PMN-0.15PT thin films are studied due to the electric field induced bias. From this the d33 value is calculated. d33 value is an important parameter which determines whether a material is suitable for device application (PZT). But, for a device fabrication it is important to integrate them with Si wafer which is not a straightforward work .Hence, buffer layers are used to obtain a pure perovskite PMN-PT film. We have deposited 0.85PMN-0.15PT thin films of 500 nm on a SOI wafer and tried to investigate their piezoelectric application. Chapter 8 summarizes the present study and discusses about the future work that could give more insight into the understanding of the0.85PMN-0.15 PT relaxor ferroelectric thin film.

No description available.