Made available in DSpace on 2014-10-09T12:35:01Z (GMT). No. of bitstreams: 0 / Made available in DSpace on 2014-10-09T14:00:05Z (GMT). No. of bitstreams: 0 / Este trabalho teve como objetivo o desenvolvimento de sistemas dosimétricos baseados em diodos especiais de Si, resistentes a danos de radiação, para monitoração online de processos de irradiação com elétrons de 1,5 MeV de energia e para dosimetria relativa e escaneamento de feixe de elétrons clínicos dentro de uma faixa de energia de 6 a 21 MeV. Os diodos utilizados foram produzidos pelos métodos de fusão zonal padrão (FZ), Czochralski em presença de um campo magnético (MCz) e crescimento Epitaxial (EPI). Para utilizar os diodos como detectores, eles foram fixados em uma base de alumina permitindo a ligação dos eletrodos de polarização e de extração de sinais. Após a montagem na base, cada diodo foi fixado em uma sonda acrílica preta dotada de uma janela de Mylar® aluminizado e de conector do tipo LEMO®. Com os dispositivos operando em modo fotovoltaico, a integração dos sinais de corrente em função do tempo de irradiação permitiu obter a carga produzida no volume sensível de cada diodo irradiado. O acelerador de elétrons utilizado para as irradiações de doses altas foi o DC 1500/25/4 - JOB 188 de 1,5 MeV instalado no Centro de Tecnologia das Radiações do IPEN/CNEN-SP. Foram estudados o perfil da corrente em função do tempo de exposição, a repetibilidade de resposta, a sensibilidade em função da dose absorvida e a curva resposta de cada dispositivo. Foi observada uma queda na sensibilidade mais acentuada para o diodo MCz do que para o diodo FZ e uma boa repetibilidade nos dois casos. Ainda, o aumento da carga com a dose absorvida obedeceu a uma função polinomial de segunda ordem. Na caracterização do diodo EPI, ele exibiu melhor repetibilidade que a obtida por dosímetros CTA, rotineiramente aplicados em processamento por radiação. Os resultados acima descritos indicam a potencial utilização desses diodos de Si resistentes a danos de radiação em dosimetria online para aplicações envolvendo elevadas doses. Para as irradiações de doses baixas foram utilizados os Aceleradores Lineares KD2 e Primus, ambos fabricados pela Siemens e instalados no Hospital Sírio-Libanês. A resposta dos diodos foi avaliada para energias de 6 a 21 MeV. Foram estudados: a repetibilidade de resposta, a curva dose-resposta em função da dose absorvida, a sensibilidade em carga com a energia do feixe de elétrons, a porcentagem de dose profunda (PDP) e o perfil transversal de dose. Apesar da resposta dos diodos FZ, MCz e EPI serem levemente dependentes da energia do feixe de elétrons, a resposta dosimétrica, em todo o intervalo de energia de feixe estudado, mostrou-se linear. Ainda, em relação aos diodos epitaxiais, os dispositivos estudados mostraram excelente acordo com simulações de Monte Carlo e medições realizadas com MatriXX®, demonstrando que os dispositivos podem ser usados como dosímetros em elétrons radioterápicos para escaneamento de varredura de feixe, mapeamento de distribuições de dose de feixes, monitoramento rotineiro da constância do fator calibração e dosimetria relativa. / Tese (Doutoramento) / IPEN/T / Instituto de Pesquisas Energeticas e Nucleares - IPEN-CNEN/SP

La miniaturisation des circuits intégrés numériques tend à augmenter leur sensibilité aux radiations. Ainsi le rayonnement naturel peut induire des événements singuliers et porter atteinte à la fiabilité des circuits.Cette thèse porte sur la modélisation des mécanismes à l'origine de ces événements singuliers et sur le développement de solutions de durcissement par conception permettant de limiter l'impact des radiations sur le taux d'erreur.Dans une première partie, nous avons notamment développé une approche dénommée RWDD (Random-Walk Drift- Diffusion) modélisant le transport et la collection de charges au sein d'un circuit, sur la base d'équations physiques sans paramètre d'ajustement. Ce modèle particulaire et sa résolution numérique transitoire permettent de coupler le transport des charges avec un simulateur circuit, tenant ainsi compte de l'évolution temporelle des champs électriques dans la structure. Le modèle RWDD a été intégré avec succès dans une plateforme de simulation capable d'estimer la réponse d'un circuit suite à l'impact d'une particule ionisante.Dans une seconde partie, des solutions de durcissement permettant de limiter l'impact des radiations sur la fiabilité des circuits ont été développées. A l'échelle des cellules élémentaires, de nouvelles bascules robustes aux radiations ont été proposées, en limitant leur impact les performances. Au niveau système, une méthodologie de duplication de l'arbre d'horloge a été développée. Enfin, un flot de triplication a été conçu pour les systèmes dont la fiabilité est critique. L'ensemble de ces solutions a été implémenté en technologie 65 nm et UTBB-FDSOI 28 nm et leur efficacité vérifiée expérimentalement. / The extreme technology scaling of digital circuits leads to increase their sensitivity to ionizing radiation, whether in spatial or terrestrial environments. Natural radiation can now induce single event effects in deca-nanometer circuits and impact their reliability.This thesis focuses on the modeling of single event mechanisms and the development of hardening by design solutions that mitigate radiation threat on the circuit error rate.In a first part of this work, we have developed a physical model for both the transport and collection of radiation-induced charges in a biased circuit, derived from pure physics-based equations without any fitting parameter. This model is called Random-Walk Drift-Diffusion (RWDD). This particle-level model and its numerical transient solving allows the coupling of the charge collection process with a circuit simulator, taking into account the time variations of the electrical fields in the structure. The RWDD model is able to simulate the behavior of a circuit following a radiation impact, independently of the implemented function and the considered technology.In a second part of our work, hardening solutions that limit radiation impacts on circuit reliability have been developed. At elementary cell level, new radiation-hardened latch architectures have been proposed, with a limited impact on performances. At system level, a clock tree duplication methodology has been proposed, leaning on specific latches. Finally, a triplication flow has been design for critical applications. All these solutions have been implemented in 65 nm and UTBB-FDSOI 28nm technologies and radiation test have been performed to measure their hardening efficiency.

Les fibres dopées aux terres rares (REDFs) représentent un composant clef dans la fabrication de sources laser et d’amplificateurs optiques (REDFAs). Leurs hautes performances rendent cette technologie particulièrement attractive pour les applications spatiales en tant que partie active des gyroscopes à fibres optiques, pour le transfert de données et les applications LIDARS. Cependant, la grande sensibilité de ces fibres actives limite l’intégration des REDFAs au sein des missions spatiales. De nombreuses études ont été menées pour dépasser ces limitations et différentes techniques de mitigation ont été identifiées telles que le co-dopage au Cérium ou le chargement en hydrogène de ces fibres optiques. Toutes ces solutions interviennent au niveau du composant sensible et sont classées parmi les stratégies de durcissement par composant permettant la fabrication de fibres dopées aux terres rares résistantes aux radiations adaptées aux besoins des missions spatiales actuelles associées à de faibles doses d’irradiation. Cependant, l’avènement de nouveaux programmes, de nouvelles missions invitent à considérer des doses d’irradiation plus importantes, nécessitant des REDFs et des RDFAs encore plus tolérants aux radiations. A cette fin, une optimisation de l’amplificateur optique au niveau système est étudiée dans le cadre de ce doctorat en exploitant une approche couplant simulation et expériences dont les avancées pourront venir en appui des techniques de durcissement plus conventionnelles. Après la présentation du contexte, des objectifs de ce travail (Chapitre I), les mécanismes fondamentaux de l’amplification et des effets des radiations sont brièvement décrits dans le Chapitre II. Les outils de simulation basés sur l’enrichissement d’un code à l’état de l’art et ses nouvelles fonctionnalités, décrites au Chapitre III, permettent non seulement l’évaluation des performances optiques du REDFA mais aussi de prédire leurs évolutions sous irradiation. De nombreuses études expérimentales ont été réalisées sur différents REDFAs développés durant la thèse et présentés dans le chapitre IV, leurs résultats comparés à ceux issus de la simulation afin de valider nos outils de simulation. Une fois validé, le code a été utilisé pour montrer comment l’optimisation de l’architecture du REDFA permet de mitiger les effets des radiations sur ses performances (Chapitre V). Finalement, le Chapitre VI présente l’étude de l’implémentation dans le code de nouveaux effets, tels que les effets thermiques, le multiplexage du signal d’entrée à travers un couplage théorie/expérience / Rare earth doped fibers (REDFs) are a key component in optical laser sources and amplifiers (REDFAs). Their high performances render them very attractive for space applications as the active part of gyroscopes, high data transfer links and LIDARs. However, the high sensitivity of these active fibers to space radiations limits the REDFA integration in actual and future missions. To overcome these issues various studies were carried out and some mitigation techniques were identified such as the Cerium co-doping or the hydrogen loading of the REDFs. All these solutions occur at the component level and are classified as a hardening by component strategy allowing the manufacturing of radiation hardened REDFAs with adapted performances for low doses space mission. However, with the new space research programs, more challenging space missions are targeted with higher radiations doses requiring even more tolerant REDFs and REDFAs. To this aim, an optimization of the REDFA at the system level is investigated in this PhD thesis exploiting an approach coupling simulations and experiments offering the opportunity to benefit from the outputs of this hardening by system strategy in addition to other state-of-the-art approaches. After presenting the context, objectives of this work, the basic mechanisms about amplification and radiation effects as well as the architectures of REDFAs are described in chapters I and II. After that, we update a state of art REDFAs simulation code described in Chapter III, to consider not only the REDFA optical performances but also their evolutions when exposed to radiations. Several experiments on dedicated home-made REDFA have been performed using accelerated irradiation tests (Chapter IV) and the comparison between these data and those obtained through the new code validated the simulation tools. Thereafter, we exploit the validated code to highlight how the optimization of the REDFA architecture can participate to the mitigation of the radiation effects on the amplifier performances (Chapter V). Finally, in chapter VI the implementation in the code of several other effects, such as thermal effects, input signal multiplexing was investigated both from experimental and calculation point of views

NASA missions require innovative power electronics system and component solutions with long life capability, high radiation tolerance, low mass and volume, and high reliability in space environments. Presently vertical double-diffused MOSFETs (VDMOS) are the most widely used power switching device for space power systems. It is proposed that a new lateral double-diffused MOSFET (LDMOS) designed at UCF can offer improvements in total dose and single event radiation hardness, switching performance, development and manufacturing costs, and total mass of power electronics systems. Availability of a hardened fast-switching power MOSFET will allow space-borne power electronics to approach the current level of terrestrial technology, thereby facilitating the use of more modern digital electronic systems in space. It is believed that the use of a p+/p-epi starting material for the LDMOS will offer better hardness against single-event burnout (SEB) and single-event gate rupture (SEGR) when compared to vertical devices fabricated on an n+/n-epi material. By placing a source contact on the bottom-side of the p+ substrate, much of the hole current generated by a heavy ion strike will flow away from the dielectric gate, thereby reducing electrical stress on the gate and decreasing the likelihood of SEGR. Similarly, the device is hardened against SEB by the redirection of hole current away from the base of the device's parasitic bipolar transistor. Total dose hardness is achieved by the use of a standard complementary metal-oxide semiconductor (CMOS) process that has shown proven hardness against total dose radiation effects.

Les capteurs monolithiques actifs à pixels (Monolithic Active Pixel Sensors, MAPS) sont de bons candidats pour être utilisés dans des expériences en Physique des Hautes Énergies (PHE) pour la détection des particules chargées. Dans les applications en PHE, des puces MAPS sont placées dans le voisinage immédiat du point d’interaction et sont directement exposées au rayonnement intense de leur environnement. Dans cette thèse, nous avons étudié et amélioré la résistance aux radiations des MAPS. Les effets principaux de l’irradiation et le progrès de la recherche sur les MAPS sont étudiés tout d'abord. Nous avons constaté que les cœurs des SRAM IP incorporées dans la puce MAPS limitent sensiblement la tolérance aux radiations de la puce MAPS entière. Aussi, pour améliorer la radiorésistance des MAPS, trois mémoires radiorésistantes sont conçues et évaluées pour les expériences en PHE. Pour remplacer les cœurs des IP SRAM, une SRAM radiorésistante est développée sur une petite surface. Pour les procédés de plus petit taille de grille des transistors, dans lequel les effets SEU (Single Event Upset) deviennent significatifs, une SRAM radiorésistante avec une tolérance SEU accrue est réalisée à l’aide d’un algorithme de détection et de correction d'erreurs (Error Detection And Correction, EDAC) et un stockage entrelacé des bits. Afin d'obtenir une tolérance aux rayonnements et une densité de micro-circuits plus élevées, une mémoire à double accès avec une cellule à 2 transistors originale est développée et évaluée pour des puces MAPS futures. Enfin, la radiorésistance des puces MAPS avec des nouveaux procédés disponibles est étudiée, et les travaux futurs sont proposés. / Monolithic Active Pixel Sensors (MAPS) are good candidates to be used in High Energy Physics (HEP) experiments for charged particle detection. In the HEP applications, MAPS chips are placed very close to the interaction point and are directly exposed to harsh environmental radiation. This thesis focuses on the study and improvement of the MAPS radiation hardness. The main radiation effects and the research progress of MAPS are studied firstly. During the study, the SRAM IP cores built in MAPS are found limiting the radiation hardness of the whole MAPS chips. Consequently, in order to improve the radiation hardness of MAPS, three radiation hard memories are designed and evaluated for the HEP experiments. In order to replace the SRAM IP cores, a radiation hard SRAM is developed on a very limited area. For smaller feature size processes, in which the single event upset (SEU) effects get significant, a radiation hard SRAM with enhanced SEU tolerance is implemented by an error detection and correction algorithm and a bit-interleaving storage. In order to obtain higher radiation tolerance and higher circuitry density, a dual-port memory with an original 2-transistor cell is developed and evaluated for future MAPS chips. Finally, the radiation hardness of the MAPS chips using new available processes is studied, and the future works are prospected.

Cette thèse est consacrée à l'étude de la réponse aux radiations d'amplificateurs à fibre optiques dopées Er 3+ et Yb3+. Ces dispositifs fonctionnant à 1,5 µm ont été conçus pour des applications spatiales et l'évaluation de leurs performances revêt d’une importance capitale dans un tel environnement hostile. Deux traitements, le chargement en H2 et le co-dopage au Ce du cœur de la fibre, ont été étudiés comme solutions de durcissement aux radiations. Une étude spectroscopique a permis d’approfondir la connaissance des mécanismes physiques de base responsables de la dégradation de ces composants et par conséquent de proposer des solutions de durcissement. La thèse est organisée en trois parties. La Partie I présente une description générale des fibres dopées aux ions de Terres Rares (TR), avec l'introduction des concepts de base de la physique de tels éléments et leur interaction avec la matrice hôte (verre phosphosilicate). L'état de l'art concernant les effets des rayonnements sur les fibres dopées aux TR est également présenté. La Partie II décrit les échantillons et les techniques expérimentales utilisées. La Partie III décrit les principaux résultats dont les tests, en configuration active, démontrent que le co-dopage au Ce ainsi que le chargement en H2 ont un rôle-clé dans la limitation des pertes induites par rayonnement. L'analyse spectroscopique de la matrice vitreuse (Raman) et des ions TR (par mesures de luminescence stationnaire et résolue en temps) mettent en exergue un fort effet de durcissement, conduisant à une préservation de l'efficacité du système physique en opération / This thesis is devoted to the study of the radiation response of optical amplifiers based on Er/Yb doped fibers. These devices operating at 1.5 µm are conceived for space applications and contextually the evaluation of their performance in such harsh environment becomes of crucial importance. Two treatments, the H2-loading and the Ce-doping of the fiber core, are investigated as radiation hardening solutions. A spectroscopic study has been associated, in order to improve the knowledge of the physical mechanisms responsible for the signal degradation and the action of the hardening solutions. The thesis is organized in three parts. Part I deals with a general description of the Rare-Earth (RE)-doped fibers, with the introduction of some basic concepts of the RE-ion physics and their interaction with the host matrix material (phosphosilicate glass). The state-of-art of the radiation effects on the optical fibers, particularly the RE- doped fibers, is also overviewed. Part II describes the samples (fiber fabrication, geometry and chemical compositions), and the used experimental techniques, including a short discussion on the related theoretical background. Part III describes the main results; firstly, the active tests, performed on the RE-doped fiber as part of an optical amplifier, demonstrate that the Ce-codoping and H2-load have a key-role in the limitation of the radiation induced losses. Then, the spectroscopic analysis of the phosphosilicate glass (Raman study) and of the RE-ions (stationary and time-resolved luminescence) show a stabilization effect due to the two treatments, leading to a preservation of the high efficiency of the physical system under study

State-of-the-art SiGe BiCMOS technologies leverage the maturity of deep-submicron silicon CMOS processing with bandgap-engineered SiGe HBTs in a single platform that is suitable for a wide variety of high performance and highly-integrated applications (e.g., system-on-chip (SOC), system-in-package (SiP)). Due to their bandgap-engineered base, SiGe HBTs are also naturally suited for cryogenic electronics and have the potential to replace the costly de facto technologies of choice (e.g., Gallium-Arsenide (GaAs) and Indium-Phosphide (InP)) in many cryogenic applications such as radio astronomy. This work investigates the response of mixed-signal circuits (both RF and analog circuits) when operating in extreme environments, in particular, at cryogenic temperatures and in radiation-rich environments. The ultimate goal of this work is to attempt to fill the existing gap in knowledge on the cryogenic and radiation response (both single event transients (SETs) and total ionization dose (TID)) of specific RF and analog circuit blocks (i.e., RF switches and voltage references). The design approach for different RF switch topologies and voltage references circuits are presented. Standalone Field Effect Transistors (FET) and SiGe HBTs test structures were also characterized and the results are provided to aid in the analysis and understanding of the underlying mechanisms that impact the circuits' response. Radiation mitigation strategies to counterbalance the damaging effects are investigated. A comprehensive study on the impact of cryogenic temperatures on the RF linearity of SiGe HBTs fabricated in a new 4th-generation, 90 nm SiGe BiCMOS technology is also presented.