Transition Metal (TM) silicides are potential materials for different high temperature applications due to their high melting points and chemical stability at elevated temperatures. In the present work, the possible use of Gr (VIB) disilicides: MoSi2 and CrSi2 for high temperature structural application and thermopower generation respectively are investigated. Literature reports on MoSi2 indicate this material to have excellent mechanical and thermal behaviors at temperatures greater than 1273 K. The major problems limiting its use are the low temperature brittleness and oxidation at intermediate temperatures and form the scope of this work. Also, CrSi2 is reported to be a narrow band gap semiconductor. Its feasibility as a thermoelectric material for power generation is investigated. The first chapter briefly summarizes the literature on MoSi2 and CrSi2 relevant to structural and thermoelectric applications respectively. Based on the available literature, the scope of further work is discussed. The second chapter describes the methods of synthesis employed for these materials and the characterization techniques adopted. Some experimental setups like thermal conductivity and hot pressing unit that were fabricated as part of the work are described in detail. The thermal conductivity apparatus is based on the principle of parallel heat flow technique. It allows accurate measurement of K and S in the temperature range 300-700 K. The induction based hot-pressing unit allows compaction of polycrystalline powders to near theoretical densities thereby allowing quantitative evaluation of the physical properties. In the third chapter, an understanding of ductility/brittleness based of electron charge density distribution is attempted. The electron charge density in Tin and simple metals (BCC and FCC) is analyzed using Bader’s Atoms in Molecule (AIM) theory. Also the relevant surface and dislocation energies in these materials are calculated according to the Rice Model. It is found that the electron densities at the critical points correlate in a simple way with the relevant stacking fault and surface energetics. Based on these results, a ductility parameter (DM odel) based on electron charge distribution, to predict the effects of chemical substitutions on ductility/brittleness in materials is proposed. In the fourth chapter, possible elements to impart ductility in MoSi2 are identified based on the DM odel values. Calculations indicate, Nb, Ta, Al, Mg and Ga to be suitable candidates for improving ductility in MoSi2. Also oxidation studies based on present experiments and reported literature data reveal, Al to improve the intermediate temperature (773-873 K) oxidation behavior. Thus to simultaneously improve the low temperature ductility and oxidation resistance, Nb and Al were identified as suitable candidates. In the fifth chapter, the experimental data of Nb and Al co-substituted MoSi2 samples are reported. Oxidation studies carried out by thermogravimetry show improved oxidation resistance in Nb and Al co-substituted samples compared to pure MoSi2 in the temperature range of 773-873 K. Mechanical characterization was carried out for (Mo0.99Nb0.01)(Si0.96Al0.04)2 co-substituted composition. Compression testing at room temperature show plastic deformation at low strain rates (10−3 /sec). Indentation experiments show a reduction in the hardness and stiffness compared to pure MoSi2. There is also an increase in the fracture toughness (K1C ) value with the fracture modes being predominantly transgranular. The sixth chapter describes the structural, thermal and transport properties of CrSi2. Structural refinement was carried out by Rietveld method and the positional, thermal parameters and occupancy were fixed. Thermo-gravimetric analysis shows oxidation resistance in powdered samples upto 1000 K. Thermal expansion (α) studies reveal anisotropy in the α values with an unusual decrease in the average αV values between 500 and 600 K. Measurements of electrical resistivity and seebeck coefficient indicate a degenerate semiconducting behavior. Electronic band structure calculations indicate a narrow indirect band gap (EG) material with EG~0.35 eV. Thermal conductivity (K) measurements show a decrease in K value with increasing temperature. Calculation of the thermoelectric figure of merit (ZT) show a maximum value of 0.18 at 800 K for the temperature range studied. Based on an analysis of the experimental and theoretical results, it is identified that further improvements in ZT of CrSi2 may be possible by reducing the lattice thermal conductivity and optimization of the carrier concentration. In chapter seven, the effect of particle size on ZT of CrSi2 is studied. Nano powders of CrSi2 were prepared by mechanical milling. Contamination is found to be a major problem during milling and the different milling parameters (milling speed, atmosphere, dispersant etc) were optimized to minimize contamination. The milled powders were further hot pressed to achieve high densities in a short duration thereby minimizing the grain growth. It is observed that the lattice thermal conductivity is reduced significantly with decreasing grain size. Measurements of ZT show a maximum value of 0.20 in the milled sample compared to 0.14 in arc melted CrSi2 at 600 K. In chapter eight the effect of chemical substitutions on ZT of CrSi2 is studied. Mn substitutions in Cr site were carried out to study the effect of atomic mass on lattice thermal conductivity (KP ). Al substitutions in Si site were carried out to tune the Fermi level. Results of Mn substitution show a large decrease in KP but also a reduction in the thermoelectric power factor (S2σ). The maximum ZT observed in the Mn substituted samples was 0.12 at 600 K. Al substitution results in an increase in the thermoelectric power factor and a subsequent increase in ZT. The maximum ZT observed was 0.27 at 700 K for 10% substitution of Al in Si site. The work reported in the thesis has been carried out by the candidate as a part of the Ph.D. training programme at Materials Research Centre, Indian Institute of Science, Bangalore, India. He hopes that this work would constitute a worthwhile contribution towards (a) basic understanding of ductility/brittleness in materials and understanding the effects of chemical substitutions, (b) Suitability of chemically substituted MoSi2 to overcome the problems of low temperature brittleness and oxidation. (c) Development of CrSi2 as a high temperature thermoelectric material.

Elektronenmikroskopie zum Wachstum von Chromdisilizid in Multilagen (nm-Bereich). Variation der abgeschiedenen Zusammensetzung und Tempertemperatur.

This study is centered on modeling and experimental efforts to simulate and optimize the performance of thermoelectric generators (TEGs) for waste heat recovery systems for use in motor vehicles. TEGs are being studied and developed for applications in which waste heat, for example, from the exhaust of motor vehicles is converted into usable electricity. TEGs consisting of TE elements integrated with an exhaust heat exchanger require optimization to produce the maximum possible power output. Important optimization parameters include TE element leg length, fill fraction, leg area ratio between n- and p-type legs, and load resistance. A finite difference model was developed to study the interdependencies among these optimization parameters for thermoelectric elements integrated with an exhaust gas heat exchanger. The present study was carried out for TE devices made from n-type Mg₂Si and p-type MnSi[subscript 1.8] based silicides, which are promising TE materials for use at high temperatures associated with some exhaust heat recovery systems. The model uses specified convection boundary conditions instead of specified temperature boundary conditions to duplicate realistic operating conditions for a waste heat recovery system installed in the exhaust of a vehicle. A numerical model for a new waste heat recovery system configuration was proposed which showed an improvement of 40% in net power output over the conventional systems while using approximately 60% more TEG modules. The 1st generation, and an improved 2nd generation TEG module using n-type Mg₂Si and p-type MnSi[subscritp 1.8] based silicides were fabricated and tested to compare and correlate TE power generation with the numerical model. Important results include parameter values for maximum power output per unit area and the interdependencies among those parameters. Heat transfer through the void areas was neglected in the numerical model. When thermal contact resistance between the TE element and the heat exchangers is considered negligible, the numerical model predicts that any volume of TE material can produce the same power per unit area, given the parameters are accurately optimized. Incorporating the thermal contact resistance, the numerical model predicts that the peak power output is greater for longer TE elements with larger leg areas. The optimization results present strategies to improve the performance of TEG modules used for waste heat recovery systems. / text

Ion Implantation of ruthenium ions into a silicon substrate followed by a high temperature anneal (known as Ion Beam Synthesis) has been used for the first time to fabricate three wafers, under the following conditions. 1. 5.67 X 1016 Ru+ cm-2, beam heated 2. 4.25 X 1016 Ru+ cm-2, heated to ~ 600°C 3. 1.27 X 1017 Ru+ cm-2, heated to ~ 600°C All wafers contained precipitates of the orthorhombic semiconducting silicide of ruthenium, Ru2Si3. No other phase was identified. The samples exhibited a complicated microstructure, with 16 different orientation variants identified, and a high degree of disorder (~ +11% strain). The first optical measurements ever carried out on this material are reported here. Absorption measurements in transmittance yielded a direct band gap, in the region of ~ 0.9eV, 0.87eV, and 0.92eV for wafers 1, 2, and 3 respectively. No discernible variation of band gap magnitude with measurement temperature was found. Upon sequential annealing, the direct band gap magnitude remained constant up to ~ 650°C after which it shifted to above that of silicon, possibly due to a change in microstructural disorder as the precipitates increase in size. This observation was confirmed by several single step anneals at various temperatures above 650°C. No photoluminescence was observed in any of the samples.

Includes bibliographical references. / Atomic diffusion during the solid state formation of thin films of nickel silicides (Ni2Si and NiSi) from nickel and amorphous silicon has been investigated using 31Si radioactive tracer and inert marker techniques. Samples were prepared by vacuum deposition of thin films of nickel and silicon, followed by thermal annealing to effect silicide growth. The radioactive tracer investigation of Ni2Si showed nickel to be the diffusing species during silicide growth. Sharply defined Ni2si* profiles of 100% radioactive concentration at the sample surface were - obtained. The results are compared with previous results in which the profiles were more spread out and of lower surface concentration. The radioactive tracer investigation of NiSi formation showed that nickel is also the diffusing species during second phase growth. The NiSi * layer was found to be of 100% concentration. Some spreading of the activity profile near the NiSi/NiSi* interface was observed. The results were consistent with previous 31Si tracer work on NiSi formation and also with the present Ni * 2Si results. The inert marker investigation used an ultra-thin (5-10 A) continuous layer of Mo or Ta to monitor atomic movement during silicide growth. The results confirmed nickel to be the diffusing species during the growth of both phases. These results are in excellent agreement with previous inert marker studies of nickel silicide growth.

No description available.

MoSiB alloys show promise as the next-generation turbine blade material due to their high-temperature strength and oxidation resistance afforded by a protective borosilicate surface layer. Powder processing and reactive synthesis of these alloys has proven to be a viable method and offers several advantages over conventional melt processing routes. Microstructures obtained have well-dispersed intermetallics in a continuous matrix of molybdenum solid-solution (Mo-ss). However, bend testing of pure Mo and Mo-ss samples has shown that, while the powder processing route can produce ductile Mo metal, the hardening effect of Si and B in solid-solution renders the matrix brittle. Testing at elevated temperatures (200°C) was performed in order to determine the ductile-to-brittle transition temperature of the metal as an indication of ductility. Methods of ductilizing the Mo-ss matrix such as annealing and alloying additions have been investigated.

No description available.

Mémoire numérisé par la Division de la gestion de documents et des archives de l'Université de Montréal.

Atualmente, existe uma grande demanda por materiais caracterizados por um balanço adequado de propriedades, para aplicações estruturais em altas temperaturas. Superligas de última geração a base de níquel podem ser usadas sob carregamento em temperaturas próximas a 1150 ºC, mas informações indicam que materiais constituídos de microestruturas multifásicas apresentam maior potencial para estas aplicações, dentre os quais, os que contêm fase(s) intermetálica(s) em equilíbrio com um metal ou liga refratária. Na última década foram avaliados pelo Grupo Diagrama de Fases e Termodinâmica Computacional da Escola de Engenharia de Lorena os sistemas ternários metal refratário (molibdênio, nióbio, tântalo, vanádio, titânio, zircônio)-silício-boro, com o objetivo de serem determinadas as relações de fases em altas temperaturas e de ser desenvolvido um banco de dados termodinâmicos. Com o estudo experimental do sistema háfnio-silício- boro na seção isotérmica a 1600 ºC e sua Projeção Liquidus, na região rica em Háfnio, completa-se este ciclo de trabalhos. Saliente-se que o estudo deste sistema ternário exigiu a revisão dos sistemas binários háfnio-silício e háfnio-boro, através de sua avaliação experimental. Foram utilizadas no trabalho matérias-primas de elevada pureza (háfnio - mínimo de 99,8%, silício - mínimo de 99,998% e boro - mínimo de 99,5%). A metodologia experimental envolveu basicamente as seguintes etapas: (i) produção das ligas em forno a arco; (ii) tratamento térmico das ligas na temperatura de 1600 ºC; (iii) caracterização por difração de raios-X, microscopia eletrônica de varredura das ligas no estado bruto de fusão e tratadas termicamente e espectroscopia de energia dispersiva. Como resultado do estudo observou-se: (i) no sistema binário háfnio-silício a reação eutética L _HfSS + Hf2Si, na região rica em háfnio, as reações peritéticas L + Hf5Si3 Hf2Si, L + Hf3Si2 Hf5Si3, L + Hf3Si2 Hf5Si4, L + Hf5Si4 HfSi, L + HfSi HfSi2, a transformação congruente L Hf3Si2, e a reação eutética L SiSS + HfSi2, na região rica em silício, a estabilidade das fases intermediárias Hf2Si, Hf5Si3, Hf3Si2, Hf5Si4 a 1600 ºC, e a estabilidade de HfSi e HfSi2 a 1200 ºC, o que sugere alterações significativas em relação ao diagrama de fases atualmente aceito pela literatura; (ii) no sistema binário háfnio-boro a reação eutética L _HfSS + HfB, na região rica em háfnio, a reação peritética L + HfB2 HfB, a transformação congruente L HfB2 e a reação eutética L B-RhomSS + HfB2, na região rica em boro, e a estabilidade das fases intermediárias HfB e HfB2 a 1600 ºC, o que está de acordo com o diagrama de fases atualmente aceito pela literatura; (iii) no sistema ternário háfnio-silício-boro na região rica em háfnio, na projeção Liquidus, verificou-se as reações L _HfSS + Hf2Si + HfB, L HfB + Hf2Si, L HfB2 + Hf2Si, L HfB2 + Hf5Si3, L HfB2 + Hf3Si2, L HfB2 + Hf5Si4, L HfB2 + HfSi, L _HfSS + Hf2Si, L _HfSS + HfB, L + Hf5Si3 Hf2Si, L + Hf3Si2 Hf5Si3, L + Hf3Si2 Hf5Si4, L + Hf5Si4 HfSi e L + HfB2 HfB e na seção isotérmica a 1600 ºC, verificou-se a estabilidade das fases _HfSS, Hf2Si, Hf5Si3, Hf3Si2, Hf5Si4, HfSi, HfSi2, HfB e HfB2, e a existência dos campos trifásicos _HfSS + HfB + Hf2Si, HfB2 + HfB + Hf2Si, HfB2 + Hf2Si + Hf5Si3, HfB2 + Hf5Si3 + Hf3Si2, HfB2 + Hf3Si2 + Hf5Si4, HfB2 + Hf5Si4 + HfSi e HfB2 + HfSi + HfSi2. / Nowadays, there is a big demand for materials for structural applications at high temperatures. These materials must present a good properties balance. The last generation of the nickel-base superalloys can be used at temperatures close to 1150oC. However, information available so far shows that multiphase microstructure materials are potentially better for such application. Among these materials, the Group of Phase Diagrams and Computational thermodynamics in the Escola de Engenharia de Lorena has chosen those systems, which contains intermetallic(s) phase(s) in equilibrium with refractory metal or alloy for evaluation. Recently we have evaluated the phase stability at high temperature in the refractory metal (molybdenum, niobium, tantalum, vanadium, titanium, zirconium)- silicon-boron system, aiming at the development of a thermodynamic data base. The experimental study of the isothermal section at 1600 ºC and the Liquidus projection of the hafnium-silicon-boron system completes this cycle of works. The study of this ternary system demanded the revision of the hafnium-silicon and hafnium-boron binary systems, through its experimental evaluation. Alloys had been produced with blades of hafnium (minimum 99.8%), silicon (minimum 99.998%) and boron (minimum 99.5%), in the voltaic arc furnace under argon atmosphere, and heat treated at 1600 ºC under argon atmosphere. The phases had been identified by X-ray diffraction and contrast in backscattered electron imaging mode and spectroscopy of dispersive energy. The study determined: (i) in the binary system hafnium-boron the eutectic reaction L _HfSS + HfB, in the rich region of hafnium, the peritectic reaction L + HfB2 HfB, the congruent transformation L HfB2 and the eutectic reaction L B-Rhom + HfB2, in the rich region of boron, and the stability of the intermediate phases HfB and HfB2 at 1600 ºC, what is in agreement to the currently accepted diagram; (ii) in the binary system hafnium-silicon the eutectic reaction L _HfSS + Hf2Si, in the rich region of hafnium, the peritectic reactions L + Hf5Si3 Hf2Si, L + Hf3Si2 Hf5Si3, L + Hf3Si2 Hf5Si4, L + Hf5Si4 HfSi and L + HfSi HfSi2, the congruent transformation L Hf3Si2, and the eutectic reaction L SiSS + HfSi2, in the rich region of silicon, the stability of the intermediate phases Hf2Si, Hf5Si3, Hf3Si2, Hf5Si4 at 1600 ºC, and the stability of HfSi and HfSi2 at 1200 ºC, what suggests significant alterations in relation to the currently accepted diagram; (iii) in the ternary system hafnium-silicon-boron, in the rich region in hafnium, in the Liquidus projection, the reactions L _HfSS + Hf2Si + HfB, L HfB + Hf2Si, L HfB2 + Hf2Si, L HfB2 + Hf5Si3, L HfB2 + Hf3Si2, L HfB2 + Hf5Si4, L HfB2 + HfSi, L _HfSS + Hf2Si, L _HfSS + HfB, L + Hf5Si3 Hf2Si, L + Hf3Si2 Hf5Si3, L + Hf3Si2 Hf5Si4, L + Hf5Si4 HfSi e L + HfB2 HfB and in the isothermal section at 1600 ºC, the stability of the phases _HfSS, Hf2Si, Hf5Si3, Hf3Si2, Hf5Si4, HfSi, HfSi2, HfB and HfB2, and the threephase fields _HfSS + HfB + Hf2Si, HfB2 + HfB + Hf2Si, HfB2 + Hf2Si + Hf5Si3, HfB2 + Hf5Si3 + Hf3Si2, HfB2 + Hf3Si2 + Hf5Si4, HfB2 + Hf5Si4 + HfSi and HfB2 + HfSi + HfSi2.