This paper describes the development of an experiment to test the characteristics and functionality of Silicon Carbide (SiC) components in a space environment. The experiment is a part the "Miniature Student Satellite" (MIST) project, and the "Work on Venus" project, both situated at KTH, Stockholm, Sweden The paper primarily covers the development and implementation of the experiments microcontroller and its software, whilst the construction and development of the test circuit for the transistors is carried out at the same time by another team, and therefore described in a separate paper. A microcontroller is selected for this experiment after consideration is taken to both the Low Earth Orbit environment where the experiment will take place, end the power consumption restrictions due to the limited amount of power available at the satellite itself. The software on the microcontroller is then developed to read temperature and voltage input from the different transistors under test, and transform the input data to a readable format sent to the satellites On Board Computer, which can then communicate the readings to the Earth Base Station. Apart from the software of the SiC experiment, a similar software solution on a similar microcontroller is developed for another experiment called MOREBAC, which will be placed on the same satellite. The main difference between the MOREBAC project and SiC in Space will be the type of data read on the input, the number of inputs and the format of the package sent to the On Board Computer. The final stage of the work for this thesis is the design and construction of a Printed Circuit Board. The board contains the microcontroller and connected components, the transistors to be tested, as well as power supplying components, covered in yet another thesis work. / Den här rapporten beskriver utvecklingen av ett experiment vars uppgift är att testa karaktäristiken och funktionaliteten hos Kiselkarbid(SiC)-komponenter i rymden. Experimentet, som går under namnet SiC in Space, är en del av "Minitature Student Satellite"-projektet (MIST), samt projektet "Working on Venus", vilka båda utförs på KTH, Stockholm, Sverige. Rapporten avhandlar huvudsakligen utvecklingen och implementationen av experimentets mikrokontroller samt den tillhörande mjukvaran, samtidigt som testkretsen för den transistor som undersökts utvecklades i ett annat projekt, och är således avhandlat i en annan rapport. En mikrokontroller valdes ut för projektet baserat både klimatet i "Low Earth Orbit" där satelliten kommer att befinna sig, samt de krav som ställdes på strömförbrukningen baserat på den begränsade strömförsörjningen på själva satelliten. Mjukvaran på mikrokontrollern utvecklades sedan för att avläsa temperaturvärden och spänningsnivåer vid testpunkter på transistorerna, för att sedan översätta denna data till ett läsbart format samt skicka den till satellitens omborddator, som i sin tur kan skicka datan till basstationen på jorden. Utöver den mjukvara som utvecklats till SiC in Space, utvecklades även en liknande lösning för ett annat experiment på satelliten, kallat MOREBAC. Den huvudsakliga skillnaden mellan de två mjukvarulösningarna är att de testpunkter som ska läsas av på MOREBAC skiljer sig både i antal och i utförande från de testpunkter som ska läsas på SiC in Space, samt det datapaket som sedan skickas till omborddatorn. Det slutgiltiga steget under detta projekt var sedan att designa och konstruera ett kretskort (PCB). Kretskortet innehåller både den mikrokontroller som avhandlas i denna rapport, transistorerna som ska testas, samt en strömförsörjningslösning som utvecklats i ytterligare ett parallellt projekt.

Since the first commercial silicon carbide (SiC) transistor was released, the interest in SiC has grown exponentially [1]. The wide energy band gap, high critical electric field and thermal conductivity of silicon carbide allow it to withstand higher voltage/current gains than conventional semiconductor materials [2]. The electrical properties of SiC enable integrated devices and circuits to operate at higher voltages and temperatures. One of the most attractive applications for SiC is in inverters for photovoltaic systems, where switching time is of great importance. This thesis presents the study of two bipolar junction transistors (BJT), FSICBH15A120 of SiC and BUV48A of conventional silicon (Si). The transistors were simulated and validated experimentally, then tested in a DC/AC pv inverter with a polycrystalline solar module of 36 solar cells as power source. The simulation results showed high efficiency and low power losses. / Sedan den första kommersiella transistorn av kiselkarbid (SiC) släpptes har intresset för SiC ökat exponentiellt [1]. Det breda energibandgapet, höga kritisk elektriska fältstyrkan och termiska ledningsförmågan i SiC gör att den klarar en högre kombination av spänning/strömförstärkning än konventionella halvledarmaterial [2]. De elektriska egenskaperna av SiC gör det möjligt för integrerade komponenter och kretsar att arbeta i högre spänningar och temperaturer. Ett av de största användningsområdena för SiC är i växelriktare för solceller, där switch-tid har stor betydelse. I detta examensarbete presenteras studien av två bipolära transistorer (BJT), FSICBH15A120 av SiC och BUV48A av konventionellt kisel (Si). Transistorerna simulerades och valideras experimentellt, och slutligen jämfördes med varandra i en DC/AC-omvandlare med en polykristallin solpanel av 36 solceller som strömkälla. Hög verkningsgrad och låga energiförluster påvisades.

Using inelastic electron scattering in combination with dielectric theory simulations on differently prepared graphene layers on silicon carbide we demonstrate that the coupling between the 2D plasmon of graphene and the surface optical phonon of the substrate cannot be quenched by modifcation of the interface via intercalation. The intercalation rather provides additional modes like, e.g., the silicon-hydrogen stretch mode in the case of hydrogen intercalation or the silicon-oxygen vibrations for water intercalation that couple to the 2D plasmons of graphene. Furthermore, in the case of bilayer graphene with broken inversion symmetry due charge imbalance between the layers, we observe a similar coupling of the 2D plasmon to an internal infrared-active mode, the LO phonon mode. The coupling of graphene plasmons to vibrational modes of the substrate surface and internal infrared active modes is envisioned to provide an excellent tool for tayloring the plasmon band structure of monolayer and bilayer graphene for plasmonic devices such as plasmon flters or plasmonic wave guides. The rigidity of the effect furthermore suggest that it may be of importance for other 2D materials as well.

The doping of quasi-freestanding graphene (QFG) on H-terminated, Si-face 6H-, 4H-, and 3C-SiC is studied by angle-resolved photoelectron spectroscopy (ARPES) close to the Dirac point. Using semi-insulating as well as n-type doped substrates we shed light on the contributions to the charge carrier density in QFG caused by i) the spontaneous polarization of the substrate, and ii) the band alignment between the substrate and the graphene layer. In this way we provide quantitative support for the previously suggested model of polarization doping of graphene on SiC [Phys. Rev. Lett. 108, 246104 (2012)].

Damage to the central nervous system (CNS) leads to the generation of an immune response which culminates with the encapsulation of the damaged area. The encapsulation, known as a glial scar, essentially breaks neural signal pathways and blocks signal transmissions to and from the CNS. The effect is the loss of motor and sensory control for the damaged individual. One method that has been used successfully to treat this problem is the use of a brain-machine interface (BMI) which can intercept signals from the brain and use these signals to control a machine. Although there are many types of BMI devices, implantable devices show the greatest promise with the ability to target specific areas of the CNS, with reduced noise levels and faster signal interception, and the fact that they can also be used to send signals to neurons. The largest problem that has plagued this type of BMI device is that the materials that have been used for their construction are not chemically resilient, elicit a negative biological response, or have difficulty functioning for extended periods of time in the harsh body environment. Many of these implantable devices experience catastrophic failure within weeks to months because of these negative factors. New materials must be examined to advance the future utilization of BMI devices to assist people with CNS damage or disease. We have proposed that two semiconductor materials, cubic silicon carbide (3C-SiC) and nanocrystalline diamond (NCD), which should provide solutions to the material biocompatibility problems experienced by implantable BMI devices. We have shown in this study that these two materials show chemical resilience to neuronal cellular processes, and we show evidence which indicates that these materials possess good biocompatibility with neural cell lines that, in the worst case, is comparable to celltreated polystyrene and, in most cases, even surpasses polystyrene. We have utilized 3C-SiC within an electrode device and activated the action potential of differentiated PC12 cells. This work details our initial efforts to modify the surfaces of these materials in order to improve cellular interaction and biocompatibility, and we examine our current and future work on improving our implantable BMI devices.

Les défauts ponctuels dans les matériaux à grande bande interdite font l’objet de nombreuses recherches, compte tenu des perspectives d’applications en technologie quantique. La réalisation de qubits et de capteurs quantiques a échelle nanomètres à l’aide du centre NV– a suscité la recherche de défauts ayant des propriétés magnéto-optiques similaires, mais dans un matériau technologiquement plus mûr tel que le carbure de silicium (SiC). Le SiC se présente sous différentes structures cristallographiques, notamment cubique (3C) et hexagonales (4H et 6H). Cette propriété permet d’obtenir une plus grande variété de défauts ponctuels profonds. Dans cette thèse, j'ai établi présence du défaut azote-lacune (NCVSi) de spin S=1 dans un échantillon de 4H-SiC irradié par des protons, en réalisant la spectroscopie d'excitation de la photoluminescence à la température cryogénique et en comparant les résultats à des calculs ab initio. J'ai également développé un dispositif qui m'a permis de détecter optiquement la résonance magnétique de spin S=1 (ODMR) de la bilacune (VCVSi) dans un échantillon de 3C-SiC et d'étudier son interaction hyperfine avec des spins nucléaires d’atome de carbone et de silicium voisins. / Point-like defects in wide-bandgap materials are attracting intensive research attention owing to prospective applications in quantum technologies. Inspired by the achievements obtained with the NV– center in diamond for which qubit and nanoscale quantum sensors have been demonstrated, the search for high spin color centers with similar magneto-optical properties in a more technological mature material such as silicon carbide (SiC) had a renewed interest. Indeed, SiC exhibits polymorphism, existing for instance with cubic (3C polytype) or hexagonal (4H and 6H polytypes) crystalline structures. Such property provides a degree of freedom for engineering a rich assortment of intrinsic and extrinsic atomic-like deep defects. In this thesis using photoluminescence excitation spectroscopy at cryogenic temperature and a comparison to ab initio calculations I have evidence the presence of nitrogen-vacancy spin S=1 (NCVSi) defect in proton irradiated 4H-SiC. I have also developed a setup that allowed me to detect optically the S=1 spin magnetic resonance (ODMR) of the divacancy (VCVSi) in 3C-SiC, and study its hyperfine interaction with nearby carbon and silicon nuclear spins.

京都大学 / 0048 / 新制・課程博士 / 博士(工学) / 甲第19722号 / 工博第4177号 / 新制||工||1644(附属図書館) / 32758 / 京都大学大学院工学研究科電子工学専攻 / (主査)教授 木本 恒暢, 教授 髙岡 義寛, 教授 山田 啓文 / 学位規則第4条第1項該当 / Doctor of Philosophy (Engineering) / Kyoto University / DFAM

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This paper deals with a method to additionally heat with switching losses in a classical power cycling test, as it is often used for power semiconductors.The fundamentals of testing, switching behavior, thermal and electrical characteristics of semiconductors are covered.The core of the work is the construction, start-up and solution of technical problems during the testing of the test stand. Another aspects are the measurement and software challenges in generating the pulse pattern and in evaluating the results. The last part of the work deals with the testing of different types of semiconductors, such as IGBTs and MOSFETs, which were also made of different materials, such as silicon and silicon carbide, and had different voltage classes.:Contents i Symbols and Abbreviations iii Introduction 1 1. Power Cycling Lifetime 2 1.1. Power Cycling-induced Ageing Mechanisms and Test Methods 2 1.1.1. Overview of Packaging Technologies and their Wear-out Failures 2 1.1.2. Failure Mechanisms in Power Modules and Discrete Devices 6 1.1.3. Basic Structure of a Test Bench for DC Power Cycling Tests 8 1.1.4. Modifications for SiC MOSFET Operation 12 1.1.5. Measurement Accuracy, Limits and Consequences for Test Evaluation 16 1.1.6. Thermal Resistance and Thermal Impedance Spectroscopy 18 1.2. Empirical Power Cycling Lifetime Models 21 2. Specific Limitations in Conditions for some Devices 27 3. Approaches of an Application-close Power Cycling Test 30 4. New Test Bench Concept with an adjustable part of switching losses 35 4.1. Basics for Switching 35 4.1.1. Active Clamping 38 4.1.2. Boosted Active Clamping 40 4.2. Repetitive Unclamped Inductive Switching 42 4.3. Test Bench Concept for Power Cycling Test with Turn-off Losses 44 4.4. Dimensioning of the Stray Inductance 47 4.4.1. Current Ripple and Attainable Switching Losses 51 4.5. Special Setup for Si and SiC MOSFETs 57 4.6. Measurement Algorithm and necessary Hardware 58 4.6.1. Measurement Hardware 58 4.6.2. Measurement Algorithm 60 4.6.3. Challenges during the Measurement 62 4.6.4. Current Source for Fast Regulation 66 5. Test Results with IGBTs 69 5.1. Modules with Baseplate 69 5.2. Modules without Baseplate 80 5.3. IGBTs in Discrete Housings 90 6. Test Results with MOSFETs 97 6.1. Low Voltage Si MOSFETs 97 6.2. SiC MOSFETs 106 7. Analysis of Si Low-voltage MOSFETs Results with FEM 107 8. Conclusion and Outlook 113 9. Acknowledgement 118 References 119 Appendix 136